JPH0586871B2 - - Google Patents

Info

Publication number
JPH0586871B2
JPH0586871B2 JP60106101A JP10610185A JPH0586871B2 JP H0586871 B2 JPH0586871 B2 JP H0586871B2 JP 60106101 A JP60106101 A JP 60106101A JP 10610185 A JP10610185 A JP 10610185A JP H0586871 B2 JPH0586871 B2 JP H0586871B2
Authority
JP
Japan
Prior art keywords
film
cdse
thin film
semiconductor film
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60106101A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61264762A (ja
Inventor
Tomoji Okada
Juji Kamogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Itron Corp
Original Assignee
Ise Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ise Electronics Corp filed Critical Ise Electronics Corp
Priority to JP60106101A priority Critical patent/JPS61264762A/ja
Publication of JPS61264762A publication Critical patent/JPS61264762A/ja
Publication of JPH0586871B2 publication Critical patent/JPH0586871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Formation Of Insulating Films (AREA)
JP60106101A 1985-05-20 1985-05-20 薄膜トランジスタおよびその製造方法 Granted JPS61264762A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60106101A JPS61264762A (ja) 1985-05-20 1985-05-20 薄膜トランジスタおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60106101A JPS61264762A (ja) 1985-05-20 1985-05-20 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS61264762A JPS61264762A (ja) 1986-11-22
JPH0586871B2 true JPH0586871B2 (de) 1993-12-14

Family

ID=14425124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60106101A Granted JPS61264762A (ja) 1985-05-20 1985-05-20 薄膜トランジスタおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS61264762A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011081000A1 (en) * 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device

Also Published As

Publication number Publication date
JPS61264762A (ja) 1986-11-22

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