JPH0587592B2 - - Google Patents
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- Publication number
- JPH0587592B2 JPH0587592B2 JP16616088A JP16616088A JPH0587592B2 JP H0587592 B2 JPH0587592 B2 JP H0587592B2 JP 16616088 A JP16616088 A JP 16616088A JP 16616088 A JP16616088 A JP 16616088A JP H0587592 B2 JPH0587592 B2 JP H0587592B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- tial
- ions
- composite material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000010409 thin film Substances 0.000 claims description 37
- 229910010038 TiAl Inorganic materials 0.000 claims description 32
- 239000002131 composite material Substances 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 30
- 229910000765 intermetallic Inorganic materials 0.000 claims description 19
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 38
- 230000003647 oxidation Effects 0.000 description 19
- 238000007254 oxidation reaction Methods 0.000 description 19
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910010039 TiAl3 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
［産業上の利用分野］
本発明は、航空機や宇宙関連部品の軽量耐熱材
料として有用な複合材料に関するものである。
［従来の技術及び課題］
Ti又はTi合金は、軽量で比強度が高いため、
航空機や宇宙関連の各種部品として開発されてき
たが、最近、高温材料としても注目されている。
しかしながら、Ti又はTi合金は高温耐酸化性が
著しく劣るため、使用温度が制限されるという問
題があつた。
このようなことから、Ti又はTi合金の基材上
に高温耐酸化性の優れたTiAl系金属間化合物の
薄膜層を被覆して複合材料とすることが試みられ
ている。しかしながら、かかる複合材料において
も高温の酸化性雰囲気に曝すと、TiAl系金属間
化合物の薄膜層中のAlが基材側へ内方拡散し、
次第にAl濃度の低い薄膜層が形成されるように
なり、最後には耐酸化性を有するTiAl系金属間
化合物の薄膜層が喪失して耐酸化性処理の効果が
消滅してしまうという問題があつた。
本発明は、上記従来の課題を解決するためにな
されたもので、軽量化、耐熱性に優れていると共
に、高温下での耐酸化性を改善した複合材料を提
供しようとするものである。
［課題を解決するための手段］
本発明は、Ptイオン又はPtとAlの両イオンの
注入により表面にPt相もしくはPt−Al相が形成
されたTi又はTi合金からなる基材と、この基材
のPt相もしくはPt−Al相が形成された表面に被
覆されたTiAl系金属間化合物の薄膜層とを具備
したことを特徴とする複合材料である。
上記Ti合金としては、例えばTiにAl、Ｖ、
Mo、Cr、Mn、Feなどの遷移金属、及びこれら
の遷移金属と共に含有されるＣ、Ｏからなる組成
を挙げることができる。
上記TiAl系金属間化合物としては、Ti3Al、
TiAl、TiAl3等を挙げることができる。特に、
TiAl系金属間化合物の薄膜層による高温での耐
酸化性はその表面にAl2O3保護被膜が形成される
ことによつてなされることから、該TiAl系金属
間化合物としてはAl量の多いTiAl、TiAl3を用
いることが望ましい。こうしたTiAl系金属間化
合物の薄膜層の基材表面への被覆手段としては、
各種のCVD法、又は真空蒸着法、高周波スパツ
タリング法、マグネトロンスパツタリング法、イ
オンビームスパツタリング法などのPVD法、或
いは蒸着とイオン注入とを同時に行なうイオンミ
キシング法等を採用し得るが、基材界面での密着
性を向上させる観点から前記イオンミキシング法
が好適である。
また、本発明は上記基材表面にSi、Sc、Ｙ、
La、Ce及びHfから選ばれる１種又は２種以上を
イオン注入されたTiAl系金属間化合物の薄膜層
を被覆したことを特徴とする複合材料である。
［作用］
本発明によれば、Ti又はTi合金からなる基材
におけるPtイオン又はPtとAlの両イオンの注入
によりPt相もしくはPt−Al相が形成された表面
にTiAl系金属間化合物の薄膜層を被覆すること
によつて、高温酸化性雰囲気に曝した場合に該薄
層膜から拡散されるAlは前記基材表面のPt相も
しくはPt−Al相と反応してPt−Al化合物として
固定化するため、該薄膜層中のAlの基材側への
拡散を防止できる。その結果、TiAl系金属間化
合物の薄膜層中に充分な量のAlを含有させるこ
とができるため、高温酸化性雰囲気下において
TiAl系金属間化合物の薄膜層の表層に酸化保護
被膜として寄与するAl2O3を形成でき、Ti又はTi
合金の優れた軽量性、耐熱性と共にTiAl系金属
間化合物の薄膜層による高温耐酸化性が効果的に
付与された複合材料を得ることができる。また、
基材表面へのPt相もしくはPt−Al相の形成を、
イオン注入手段により行なうことによつて基材表
面に高純度のPt相もしくはPt−Al相を形成でき
ること、所定な原子数単位でかつ目的とした濃度
分布を有するPt相もしくはPt−Al相を精度よく
形成できること、Pt−Al相を形成する際にPtと
Alを各々独立的に制御して導入できること、等
の利点を有する。更に、TiAl系金属間化合物の
薄膜層をイオンミキシング法により基材表面に形
成することによつて、基材表面でのミキシング作
用により薄膜層の基材に対する密着性を向上でき
る。しかも、基材と薄膜層との間にそれらの組成
的傾斜構造を有する中間層を形成できるため、応
力歪みを緩和できる。
また、基材表面にSi、Sc、Ｙ、La、Ce及びHf
から選ばれる１種又は２種以上をイオン注入され
たTiAl系金属間化合物の薄膜層を被覆すること
によつて、高温酸化性雰囲気で該薄膜層表面に形
成された耐酸化性保護被膜としてのAl2O3層の該
薄膜層に対する密着性を前記Si等のイオン注入成
分により向上できる。しかも、かかるAl2O3層の
密着性向上成分はTiAl系金属間化合物の薄膜層
自体の耐酸化性を阻害させないために該薄膜層に
対して微量添加する必要があるが、イオン注入手
法を採用することによつて該成分を微量かつ正確
に薄膜層に導入することが可能となる。
［発明の実施例］
以下、本発明の実施例を詳細に説明する。
実施例 １
まず、純Tiを加工して30mm×30mm×５mmの板
材を製作した後、この板材の片面を鏡面研磨し
た。つづいて、この板材を蒸着とイオン注入機能
を同一真空内に有する真空チヤンバ内に設置した
後、質量分離されたAlイオンを加速電圧80keV、
ドーズ量１×1017／cm2の条件で、Ptイオンを加速
電圧160keV、ドーズ量0.5×1017／cm2の条件で
夫々板材にイオン注入した。ひきつづき、同一チ
ヤンバ内においてTiAl（１：１）合金のターゲツ
トにスパツタ電圧3kV、電流密度2.5mA／cm2の条
件でArイオンを衝突させてTiAl合金を板材にス
パツタリング蒸着を行ないながら、別のイオン源
から電圧100V、電流密度0.3mA／cm2の条件で板
材をArイオンアシスト処理を行なつて板材のPt
−Al相が形成された表面に厚さ3μmのTiAl合金
からなる薄膜層を形成して複合材料を製造した。
真空チヤンバから取出した複合材料を肉眼及び
光学顕微鏡で観察した。その結果、複合材料表面
に形成されたTiAl合金薄膜層のクラツク、剥離
等の欠陥は全く認められなかつた。
実施例 ２
まず、Ti合金（6Al−4V−Ti）を加工して30
mm×30mm×５mmの板材を製作した後、この板材の
片面を鏡面研磨した。つづいて、この板材を蒸着
とイオン注入機能を同一真空内に有する真空チヤ
ンバ内に設置した後、質量分離されたPtイオン
を加速電圧160keV、ドーズ量0.5×1017／cm2の条
件で板材にイオン注入した。ひきつづき、同一チ
ヤンバ内においてEB蒸着法のトリプルハース方
式によりTiを3.8Å／secの蒸着速度で、Alを5.7
Å／secの蒸着速度で夫々板材のイオン注入層表
面に真空蒸着を行ないながら、バケツト型イオン
源によりArイオンを加速電圧10keV、電流75mA
の条件で板材に照射して、厚さ3μmのTiAl3合金
からなる薄膜層を形成して複合材料を製造した。
真空チヤンバから取出した複合材料を肉眼及び
光学顕微鏡で観察した。その結果、複合材料表面
に形成されたTiAl合金薄膜層のクラツク、剥離
等の欠陥は全く認められなかつた。
比較例 １
まず、実施例１と同様な純Tiからなる板材の
鏡面研磨した片面にPtめつきを施し、Alの1120
℃でのパツク処理を行ない、更にPtめつきを施
した後、1150℃での拡散処理を施した。つづい
て、この板材を蒸着とイオン注入機能を同一真空
内に有する真空チヤンバ内に設置した後、実施例
１と同様な方法によりPtとAlが拡散処理された
板材表面に厚さ3μmのTiAl合金からなる薄膜層
を形成して複合材料を製造した。
比較例 ２
まず、実施例２と同様なTi合金からなる板材
の鏡面研磨した片面にPtめつきを施し、Alの
1120℃でのパツク処理を行ない、更にPtめつき
を施した後、1150℃での拡散処理を施した。つづ
いて、この板材を蒸着とイオン注入機能を同一真
空内に有する真空チヤンバ内に設置した後、実施
例２と同様な方法により板材のPtとAlが拡散処
理された表面に厚さ3μmのTiAl3合金からなる薄
膜層を形成して複合材料を製造した。
しかして、本実施例１、２及び比較例１、２の
複合材料を900℃の高温酸化雰囲気中に30時間放
置して高温酸化試験を行ない、試験後の各複合材
料の外観を調べた。その結果を後掲する第１表に
示す。
実施例 ３
実施例１と同様な方法により純Tiからなる板
材の鏡面研磨した片面にAlイオン及びPtイオン
を注入した後、板材のPt−Al相が形成された表
面に厚さ3μmのTiAl合金からなる薄膜層を形成
した。つづいて、Ｙイオンを加速電圧120keV、
電流0.1mA、ドーズ量５×1015／cm2の条件で薄膜
層にイオン注入して複合材料を製造した。
しかして、本実施例３及び前述した実施例１の
複合材料を酸化雰囲気下において900℃まで昇温
し、この後常温まで下げる急熱急冷操作を10回繰
返す高温酸化試験を行ない、試験後の各複合材料
の酸化に伴う重量増及び外観を調べた。その結果
を後掲する第２表に示す。
実施例 ４
実施例１と同様な方法により純Tiからなる板
材の鏡面研磨した片面にAlイオン及びPtイオン
を注入した後、板材のPt−Al相が形成された表
面に厚さ3μmのTiAl合金からなる薄膜層を形成
した。つづいて、Siイオンを加速電圧120keV、
電流0.1mA、ドーズ量２×1015／cm2の条件で薄膜
層にイオン注入し、更にCeイオンを加速電圧
160keV、電流0.1mA、ドーズ量２×1015／cm2の
条件で薄膜層にイオン注入して複合材料を製造し
た。
しかして、本実施例４及び前述した実施例１の
複合材料を酸化雰囲気下において900℃まで昇温
し、この後常温まで下げる急熱急冷操作を20回繰
返す高温酸化試験を行ない、試験後の各複合材料
の酸化に伴う重量増及び外観を調べた。その結果
を後掲する第３表に示す。
以上、後掲する第１表から第３表より明らかな
ように本実施例１〜４の複合材料は、優れた高温
耐酸化性を有することがわかる。また、板材上の
TiAl金属間化合物からなる薄膜層にＹイオンを
注入した実施例３の複合材料は、同処理を施さな
い実施例１の複合材料に比べて苛酷な条件下の高
温酸化雰囲気においてより優れた耐酸化性を有す
ることがわかる。更に、板材上のTiAl金属間化
合物からなる薄膜層にSiイオン及びCeイオンを
注入した実施例４の複合材料は、同処理を施さな
い実施例１の複合材料に比べてより苛酷な条件下
の高温酸化雰囲気において一層優れた耐酸化性を
有することがわかる。
［発明の効果］
以上詳述した如く、本発明によれば軽量性、耐
熱性に優れていると共に、高温下での耐酸化性が
著しく改善され、航空機や宇宙関連の各種部品と
して極めて有用な複合材料を提供できる。
[Industrial Application Field] The present invention relates to a composite material useful as a lightweight heat-resistant material for aircraft and space-related parts. [Prior art and problems] Ti or Ti alloy is lightweight and has high specific strength, so
It has been developed as a variety of aircraft and space-related parts, but recently it has also attracted attention as a high-temperature material.
However, Ti or Ti alloys have extremely poor high-temperature oxidation resistance, so there is a problem in that the temperature at which they can be used is limited. For this reason, attempts have been made to coat a Ti or Ti alloy base material with a thin film layer of a TiAl-based intermetallic compound having excellent high-temperature oxidation resistance to produce a composite material. However, when such a composite material is exposed to a high-temperature oxidizing atmosphere, Al in the thin film layer of the TiAl-based intermetallic compound diffuses inward toward the base material.
A problem arises in that a thin film layer with a low Al concentration is gradually formed, and eventually the thin film layer of the TiAl-based intermetallic compound, which has oxidation resistance, is lost and the effect of the oxidation resistance treatment disappears. Ta. The present invention has been made to solve the above-mentioned conventional problems, and aims to provide a composite material that is lightweight, has excellent heat resistance, and has improved oxidation resistance at high temperatures. [Means for Solving the Problems] The present invention provides a base material made of Ti or a Ti alloy on which a Pt phase or a Pt-Al phase is formed on the surface by implanting Pt ions or both Pt and Al ions, and This is a composite material characterized by comprising a thin film layer of a TiAl-based intermetallic compound coated on the surface of the material on which the Pt phase or Pt-Al phase is formed. The above Ti alloy may include, for example, Ti, Al, V,
Examples include compositions consisting of transition metals such as Mo, Cr, Mn, and Fe, and C and O contained together with these transition metals. The above TiAl-based intermetallic compounds include Ti 3 Al,
TiAl, TiAl 3 , etc. can be mentioned. especially,
The oxidation resistance of a thin film layer of TiAl-based intermetallic compound at high temperatures is achieved by the formation of an Al 2 O 3 protective film on its surface. It is preferable to use TiAl or TiAl3 . As a means of coating the substrate surface with such a thin film layer of TiAl-based intermetallic compound,
Various CVD methods, PVD methods such as vacuum evaporation method, high frequency sputtering method, magnetron sputtering method, ion beam sputtering method, or ion mixing method in which vapor deposition and ion implantation are performed simultaneously can be used, but the basic The ion mixing method is preferred from the viewpoint of improving adhesion at the material interface. In addition, the present invention also provides Si, Sc, Y,
This composite material is coated with a thin film layer of a TiAl-based intermetallic compound into which one or more selected from La, Ce, and Hf are ion-implanted. [Function] According to the present invention, a thin film of a TiAl-based intermetallic compound is formed on the surface of a base material made of Ti or a Ti alloy, on which a Pt phase or a Pt-Al phase is formed by implanting Pt ions or both Pt and Al ions. By coating the layer, Al diffused from the thin film when exposed to a high temperature oxidizing atmosphere reacts with the Pt phase or Pt-Al phase on the surface of the base material and is fixed as a Pt-Al compound. Therefore, diffusion of Al in the thin film layer toward the base material side can be prevented. As a result, a sufficient amount of Al can be contained in the thin film layer of the TiAl-based intermetallic compound, so it is possible to
Al 2 O 3 can be formed on the surface layer of the thin film layer of TiAl-based intermetallic compound, which serves as an oxidation protective film, and Ti or Ti
It is possible to obtain a composite material that has not only the excellent lightness and heat resistance of the alloy but also the high-temperature oxidation resistance that is effectively imparted by the thin film layer of the TiAl-based intermetallic compound. Also,
Formation of Pt phase or Pt-Al phase on the substrate surface,
It is possible to form a highly pure Pt phase or Pt-Al phase on the surface of the base material by using ion implantation means, and it is possible to form a Pt phase or Pt-Al phase with a desired concentration distribution in units of a predetermined number of atoms with precision. It can be formed well, and when forming Pt-Al phase, Pt and
It has advantages such as being able to control and introduce Al individually. Furthermore, by forming a thin film layer of the TiAl-based intermetallic compound on the surface of the base material by an ion mixing method, the adhesion of the thin film layer to the base material can be improved by the mixing action on the surface of the base material. Furthermore, since an intermediate layer having a compositionally graded structure can be formed between the base material and the thin film layer, stress strain can be alleviated. In addition, Si, Sc, Y, La, Ce and Hf are added to the surface of the base material.
By coating a thin film layer of TiAl-based intermetallic compound into which one or more selected from The adhesion of the Al 2 O 3 layer to the thin film layer can be improved by the ion implantation component such as Si. Moreover, it is necessary to add a small amount of the adhesion-improving component of the Al 2 O 3 layer to the thin film layer of the TiAl-based intermetallic compound in order not to impede the oxidation resistance of the thin film layer itself. By employing this method, it becomes possible to introduce the component into the thin film layer in a trace amount and accurately. [Embodiments of the Invention] Examples of the present invention will be described in detail below. Example 1 First, pure Ti was processed to produce a plate material of 30 mm x 30 mm x 5 mm, and one side of this plate material was mirror polished. Next, after installing this plate material in a vacuum chamber that has vapor deposition and ion implantation functions in the same vacuum, the mass-separated Al ions were
Pt ions were implanted into the plate material at a dose of 1×10 17 /cm 2 , an acceleration voltage of 160 keV, and a dose of 0.5×10 17 /cm 2 . Subsequently, in the same chamber, Ar ions were bombarded against a TiAl (1:1) alloy target under conditions of a sputtering voltage of 3 kV and a current density of 2.5 mA/cm 2 to sputter deposition of TiAl alloy onto the plate material, while another ion was applied. The plate was subjected to Ar ion assist treatment under the conditions of a voltage of 100 V from the source and a current density of 0.3 mA/cm 2 to remove Pt from the plate.
A composite material was manufactured by forming a thin film layer of TiAl alloy with a thickness of 3 μm on the surface on which the -Al phase was formed. The composite material taken out from the vacuum chamber was observed with the naked eye and with an optical microscope. As a result, no defects such as cracks or peeling of the TiAl alloy thin film layer formed on the surface of the composite material were observed. Example 2 First, a Ti alloy (6Al-4V-Ti) was processed to
After producing a plate of mm x 30 mm x 5 mm, one side of this plate was mirror polished. Next, this plate material was placed in a vacuum chamber that has vapor deposition and ion implantation functions in the same vacuum, and then mass-separated Pt ions were placed on the plate material at an acceleration voltage of 160 keV and a dose of 0.5 × 10 17 /cm 2. Ion implantation was performed. Subsequently, in the same chamber, Ti was deposited at a deposition rate of 3.8 Å/sec and Al was deposited at 5.7 Å/sec using the triple hearth method of EB evaporation.
While performing vacuum evaporation on the ion-implanted layer surface of each plate at a deposition rate of Å/sec, Ar ions were accelerated using a bucket ion source at a voltage of 10 keV and a current of 75 mA.
A composite material was manufactured by irradiating the plate material under the following conditions to form a thin film layer of TiAl 3 alloy with a thickness of 3 μm. The composite material taken out from the vacuum chamber was observed with the naked eye and with an optical microscope. As a result, no defects such as cracks or peeling of the TiAl alloy thin film layer formed on the surface of the composite material were observed. Comparative Example 1 First, Pt plating was applied to one side of the same mirror-polished pure Ti plate as in Example 1, and 1120
A pack treatment was performed at 1150°C, followed by Pt plating, followed by a diffusion treatment at 1150°C. Subsequently, this plate material was installed in a vacuum chamber that has vapor deposition and ion implantation functions in the same vacuum, and then a 3 μm thick TiAl alloy was applied to the surface of the plate material, which had been diffused with Pt and Al using the same method as in Example 1. A composite material was manufactured by forming a thin film layer consisting of: Comparative Example 2 First, Pt plating was applied to one side of a mirror-polished plate material made of a Ti alloy similar to that in Example 2, and Al plated.
After performing a pack treatment at 1120°C and further applying Pt plating, a diffusion treatment was performed at 1150°C. Subsequently, after installing this plate material in a vacuum chamber that has vapor deposition and ion implantation functions in the same vacuum, a 3 μm thick TiAl A composite material was fabricated by forming a thin film layer consisting of three alloys. The composite materials of Examples 1 and 2 and Comparative Examples 1 and 2 were then subjected to a high temperature oxidation test by leaving them in a high temperature oxidation atmosphere at 900° C. for 30 hours, and the appearance of each composite material after the test was examined. The results are shown in Table 1 below. Example 3 After implanting Al ions and Pt ions into one mirror-polished surface of a plate made of pure Ti using the same method as in Example 1, a TiAl alloy with a thickness of 3 μm was implanted on the surface of the plate on which the Pt-Al phase was formed. A thin film layer was formed. Next, accelerate the Y ions at a voltage of 120 keV.
A composite material was manufactured by implanting ions into the thin film layer at a current of 0.1 mA and a dose of 5×10 15 /cm 2 . Therefore, a high-temperature oxidation test was performed on the composite materials of Example 3 and Example 1 described above, in which the temperature was raised to 900°C in an oxidizing atmosphere, and then the rapid heating and cooling operation was repeated 10 times. Weight increase and appearance due to oxidation of each composite material were investigated. The results are shown in Table 2 below. Example 4 After implanting Al ions and Pt ions into one mirror-polished surface of a plate made of pure Ti using the same method as in Example 1, a TiAl alloy with a thickness of 3 μm was implanted on the surface of the plate on which the Pt-Al phase was formed. A thin film layer was formed. Next, the Si ions were accelerated at a voltage of 120 keV.
Ions were implanted into the thin film layer at a current of 0.1 mA and a dose of 2 × 10 15 /cm 2 , and Ce ions were further accelerated at an accelerating voltage.
A composite material was manufactured by implanting ions into the thin film layer under the conditions of 160 keV, current 0.1 mA, and dose of 2×10 15 /cm 2 . Therefore, a high-temperature oxidation test was conducted on the composite materials of Example 4 and Example 1 described above, in which the temperature was raised to 900°C in an oxidizing atmosphere, and then the rapid heating and cooling operation was repeated 20 times. Weight increase and appearance due to oxidation of each composite material were investigated. The results are shown in Table 3 below. As mentioned above, as is clear from Tables 1 to 3 below, it can be seen that the composite materials of Examples 1 to 4 have excellent high-temperature oxidation resistance. Also, on the board
The composite material of Example 3, in which Y ions were implanted into the thin film layer made of TiAl intermetallic compound, had better oxidation resistance in a high-temperature oxidizing atmosphere under harsh conditions than the composite material of Example 1, which was not subjected to the same treatment. It can be seen that it has a sexual nature. Furthermore, the composite material of Example 4, in which Si ions and Ce ions were implanted into the thin film layer of TiAl intermetallic compound on the plate material, could withstand harsher conditions than the composite material of Example 1, which was not subjected to the same treatment. It can be seen that it has even better oxidation resistance in a high-temperature oxidizing atmosphere. [Effects of the Invention] As detailed above, the present invention has excellent lightness and heat resistance, as well as markedly improved oxidation resistance at high temperatures, making it extremely useful as various aircraft and space-related parts. Composite materials can be provided.
【表】【table】
【表】【table】
Claims (1)
り表面にPt相もしくはPt−Al相が形成されたTi
又はTi合金からなる基材と、この基材のPt相も
しくはPt−Al相が形成された表面に被覆された
TiAl系金属間化合物の薄膜層とを具備したこと
を特徴とする複合材料。 ２ TiAl系金属間化合物の薄膜層は、Si、Sc、
Ｙ、La、Ce及びHfから選ばれる１種又は２種以
上をイオン注入したものからなることを特徴とす
る請求項１記載の複合材料。[Claims] 1. Ti on which a Pt phase or a Pt-Al phase is formed on the surface by implantation of Pt ions or both Pt and Al ions.
Or a base material made of Ti alloy and the surface of this base material on which Pt phase or Pt-Al phase is formed is coated.
A composite material comprising a thin film layer of a TiAl-based intermetallic compound. 2 The thin film layer of TiAl-based intermetallic compound is composed of Si, Sc,
2. The composite material according to claim 1, wherein the composite material is ion-implanted with one or more selected from Y, La, Ce, and Hf.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16616088A JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16616088A JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0215164A JPH0215164A (en) | 1990-01-18 |
| JPH0587592B2 true JPH0587592B2 (en) | 1993-12-17 |
Family
ID=15826183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16616088A Granted JPH0215164A (en) | 1988-07-04 | 1988-07-04 | Composite material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215164A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2592961B2 (en) * | 1989-09-14 | 1997-03-19 | 株式会社神戸製鋼所 | Wear-resistant Ti or Ti-based alloy members |
| JPH03193859A (en) * | 1989-12-22 | 1991-08-23 | Nippon Steel Corp | Structural material of ti-al intermetallic compound improved in oxidation resistance and production thereof |
| US7455890B2 (en) * | 2003-08-05 | 2008-11-25 | General Electric Company | Ion implantation of turbine engine rotor component |
| CN108504977B (en) * | 2018-04-28 | 2020-10-02 | 江西科技师范大学 | Preparation method of titanium alloy high-temperature oxidation resistant coating |
| CN117187751A (en) * | 2023-09-20 | 2023-12-08 | 安徽科技学院 | A method for the controllable preparation of small-sized platinum-based intermetallic compounds based on vapor deposition and its application |
-
1988
- 1988-07-04 JP JP16616088A patent/JPH0215164A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0215164A (en) | 1990-01-18 |
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