JPH05900A - Furnace core tube for treating semiconductor made of quartz glass - Google Patents
Furnace core tube for treating semiconductor made of quartz glassInfo
- Publication number
- JPH05900A JPH05900A JP29527091A JP29527091A JPH05900A JP H05900 A JPH05900 A JP H05900A JP 29527091 A JP29527091 A JP 29527091A JP 29527091 A JP29527091 A JP 29527091A JP H05900 A JPH05900 A JP H05900A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- bubbles
- core tube
- furnace core
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 239000011521 glass Substances 0.000 abstract 2
- 238000002791 soaking Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】本発明は半導体を熱処理する際に
使用される石英ガラス製炉芯管の改良に関するものであ
る。従来から半導体製造用に、例えば拡散用あるいは気
相蒸着用等には石英ガラスが使用されている。これらは
一般に高純度品として透明石英ガラス製である。不透明
石英ガラスも一部に使用されているが、本来不純物が多
いため失透を起し易く、又、気孔を石英ガラス１ｃｍ３
当り１０万個以上も含んでいるものであるため赤外線の
透過効率が悪く、かえって加熱ムラを生じ易い。一方、
透明石英ガラスは高純度品であるため不透明石英ガラス
と比較して失透は起しにくいが、赤外線の透過率が良好
すぎるため発熱体の発熱ムラがそのまゝ加熱ムラとなる
という欠点を有していた。本発明は石英ガラス自体の耐
熱性，耐蝕性等を活用し、更にはこれに改良を加えるこ
とによって均熱性を改善し、熱変形の少ない、かつ長寿
命の半導体処理用石英ガラス製炉芯管を提供するもので
ある。即ち、石英ガラス中に包含する気泡の量を石英ガ
ラス１ｃｍ３当り２〜９×１０−８ｃｍ３とし、かつそ
の気孔の直径が１５〜１００μｍのものとするものであ
る。このような石英ガラスを得るには比較的透明な原料
を使用し、かつ適当な気泡が包含せしめられるような溶
融法によることが必要であるが、この範囲の気泡径およ
び気泡量を存在せしめることによってその赤外線透過率
を著しく低下せしめることなく均熱性が改善されたもの
となり、更にＯＨ濃度を２００ｐｐｍ以下とすることに
よって耐熱強度を向上させることができる。気泡の量が
石英ガラス１ｃｍ３当り９×１０−３ｃｍ３以上では赤
外線透過率が低下し温度ムラが生じ易くなり、又、２×
１０−３ｃｍ３以下の場合も赤外線透過率が良好すぎて
温度ムラが生じ易い。又、気孔径についてもその直径が
１５μｍ以下の細かいものばかりであると気泡の量を石
英ガラス１ｃｍ３当り２〜９×１０−３ｃｍ３の範囲と
するためには気泡の数が極端に多くなり、赤外線の透過
率が低下する。気泡径が１００μｍ以上の場合は逆に赤
外線の透過率が良くなりすぎ赤外線の分散効果が低下し
発熱ムラが加熱ムラに直接反映し易くなる。又、ＯＨ濃
度は低ければ低い程熱間変形が少なくなるが、上述の範
囲内で気泡が存在する場合には２００ｐｐｍ以下程度迄
存在しても著しい強度低下は認められない。本発明の石
英ガラスを得るには、高純度の石英ガラス原料を回転容
器において内面から加熱溶融することによって得られ
る。この場合、原料粒度，回転数，溶融温度，溶融時間
等を調整することにより任意の気泡径あるいは気泡量を
有する石英ガラスが得られる。又，ＯＨ濃度を２００ｐ
ｐｍ上にするには溶融法によっても達成できるが，ＯＨ
濃度の高い石英ガラスを高温において真空脱ガス処理を
行ってもよい。表１に本発明の石英ガラスおよび比較の
ための石英ガラスについて、各気泡量についての均熱特
性を示す。均熱性テストは発熱体の均熱加熱領域におけ
る石英ガラス管内の温度差を測定したものである。
又、表２にＯＨ濃度に関する熱間変形の状態を示す。比
較テスト条件は表２に示すＯＨ濃度を有する石英ガラス
管を１４００℃，４時間加熱した時の管のつぶれの状態
で比較したもので、長径（ａ）と短径（ｂ）との比で表
わした。なお使用した石英ガラスはいずれもその気泡径および気
泡量はほゞ同じものを使用した。このように本発明のよ
うな気泡およびＯＨ濃度を有する石英ガラス管は均熱性
が向上し、かつ熱変形も少ない長寿命のものとして得ら
れる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of a quartz glass furnace core tube used when heat treating a semiconductor. Conventionally, quartz glass has been used for semiconductor manufacturing, for example, for diffusion or vapor deposition. These are generally made of transparent quartz glass as high-purity products. Opaque quartz glass is also used in some parts, but it is easy for devitrification to occur due to the large amount of impurities, and the pores of quartz glass are 1 cm 3
Since it contains more than 100,000 per unit, the infrared transmission efficiency is poor, and heating unevenness is likely to occur. on the other hand,
Since transparent quartz glass is a high-purity product, devitrification is less likely to occur as compared with opaque quartz glass, but it has the drawback that uneven heating of the heating element causes uneven heating due to too good infrared transmittance. Was. INDUSTRIAL APPLICABILITY The present invention utilizes the heat resistance and corrosion resistance of the quartz glass itself, and further improves the soaking property to improve the soaking property, the quartz glass core tube for semiconductor processing has little thermal deformation and has a long life. Is provided. That is, the amount of bubbles contained in the quartz glass is set to 2 to 9 × 10 −8 cm 3 per 1 cm 3 of the quartz glass, and the diameter of the pores is set to 15 to 100 μm. In order to obtain such quartz glass, it is necessary to use a relatively transparent raw material and to carry out a melting method so that appropriate bubbles can be included. However, it is necessary to make the bubble diameter and the amount of bubbles within this range. Thus, the soaking property is improved without significantly decreasing the infrared transmittance, and the heat resistance can be improved by setting the OH concentration to 200 ppm or less. When the amount of bubbles is 9 × 10 −3 cm 3 or more per 1 cm 3 of quartz glass, the infrared transmittance is lowered and temperature unevenness easily occurs.
Also in the case of 10 −3 cm 3 or less, the infrared transmittance is too good, and temperature unevenness easily occurs. Regarding the pore diameter, if the diameter is only 15 μm or less, the number of bubbles is extremely large in order to set the amount of bubbles in the range of 2 to 9 × 10 −3 cm 3 per 1 cm 3 of quartz glass. And the transmittance of infrared rays decreases. On the contrary, when the bubble diameter is 100 μm or more, the infrared ray transmittance becomes too high and the infrared ray dispersion effect is lowered, and the heat generation unevenness is easily reflected directly on the heating unevenness. Further, the lower the OH concentration is, the less the hot deformation is. However, when the bubbles are present within the above range, the strength is not significantly reduced even when the bubbles are present up to about 200 ppm or less. The quartz glass of the present invention is obtained by heating and melting a high-purity quartz glass raw material from the inner surface in a rotary container. In this case, quartz glass having an arbitrary bubble diameter or bubble amount can be obtained by adjusting the raw material particle size, the number of revolutions, the melting temperature, the melting time, and the like. Also, OH concentration is 200p
OH can be achieved by the fusion method, but OH
The high-concentration quartz glass may be subjected to vacuum degassing treatment at high temperature. Table 1 shows the soaking characteristics of the quartz glass of the present invention and the comparative quartz glass for each bubble amount. The soaking test measures the temperature difference in the quartz glass tube in the soaking and heating region of the heating element. Table 2 shows the state of hot deformation related to the OH concentration. The comparative test conditions are the comparison of the quartz glass tubes having the OH concentrations shown in Table 2 in the crushed state of the tubes when heated at 1400 ° C. for 4 hours. The ratio of the major axis (a) to the minor axis (b) Represented. The quartz glass used had almost the same bubble diameter and bubble amount. As described above, the quartz glass tube having the bubbles and the OH concentration as in the present invention can be obtained as a long-life product having improved soaking properties and less thermal deformation.
Claims (1)
徴とする半導体処理用石英ガラス製炉芯管。 （１）気泡の個数が１０万個／ｃｍ３未満である。 （２）石英ガラスを不透明にする程度に気泡を包含す
る。 （３）直径１５〜１００μｍの気泡の全体積が直径１５
〜１００μｍ以外の気泡の全体積よりも大きい。 （４）直径１５〜１００μｍの気泡の全体積が２〜９Ｘ
１０−３ｃｍ３である。What is claimed is: 1. A quartz glass furnace core tube for semiconductor processing, characterized in that bubbles contained in quartz glass are as follows. (1) The number of bubbles is less than 100,000 / cm 3 . (2) Air bubbles are included to the extent that the quartz glass is made opaque. (3) The total volume of bubbles having a diameter of 15 to 100 μm is 15
It is larger than the total volume of bubbles other than 100 μm. (4) The total volume of bubbles having a diameter of 15 to 100 μm is 2 to 9X.
It is 10 −3 cm 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3295270A JPH0633240B2 (en) | 1991-08-23 | 1991-08-23 | Quartz glass furnace core tube for semiconductor processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3295270A JPH0633240B2 (en) | 1991-08-23 | 1991-08-23 | Quartz glass furnace core tube for semiconductor processing |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15777082A Division JPH0243720B2 (en) | 1982-09-10 | 1982-09-10 | HANDOTAISHORYOSEKIEIGARASUSEIROSHINKAN |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05900A true JPH05900A (en) | 1993-01-08 |
| JPH0633240B2 JPH0633240B2 (en) | 1994-05-02 |
Family
ID=17818424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3295270A Expired - Lifetime JPH0633240B2 (en) | 1991-08-23 | 1991-08-23 | Quartz glass furnace core tube for semiconductor processing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0633240B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0728709A1 (en) * | 1995-02-22 | 1996-08-28 | Heraeus Quarzglas GmbH | Opaque silica glass and the production process therefor |
| EP0715342A3 (en) * | 1994-11-30 | 1996-10-16 | Heraeus Quarzglas | Apparatus for heat treatment of individual wafers and method of manufacturing the reaction vessel used for treatment |
| US5651827A (en) * | 1996-01-11 | 1997-07-29 | Heraeus Quarzglas Gmbh | Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same |
| US5977000A (en) * | 1995-01-25 | 1999-11-02 | Shin-Etsu Quartz Products Co., Ltd. | High purity opaque silica glass |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5623741A (en) * | 1979-08-06 | 1981-03-06 | Toshiba Ceramics Co Ltd | Quartz glass furnace core tube for manufacturing semiconductor |
| JPS58148427A (en) * | 1982-10-20 | 1983-09-03 | Toshiba Ceramics Co Ltd | Quartz glass core tube for manufacture of semiconductor |
| JPH0243720A (en) * | 1988-08-03 | 1990-02-14 | Fujitsu Ltd | Molecular beam epitaxial growth method |
-
1991
- 1991-08-23 JP JP3295270A patent/JPH0633240B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5623741A (en) * | 1979-08-06 | 1981-03-06 | Toshiba Ceramics Co Ltd | Quartz glass furnace core tube for manufacturing semiconductor |
| JPS58148427A (en) * | 1982-10-20 | 1983-09-03 | Toshiba Ceramics Co Ltd | Quartz glass core tube for manufacture of semiconductor |
| JPH0243720A (en) * | 1988-08-03 | 1990-02-14 | Fujitsu Ltd | Molecular beam epitaxial growth method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0715342A3 (en) * | 1994-11-30 | 1996-10-16 | Heraeus Quarzglas | Apparatus for heat treatment of individual wafers and method of manufacturing the reaction vessel used for treatment |
| US5977000A (en) * | 1995-01-25 | 1999-11-02 | Shin-Etsu Quartz Products Co., Ltd. | High purity opaque silica glass |
| EP0728709A1 (en) * | 1995-02-22 | 1996-08-28 | Heraeus Quarzglas GmbH | Opaque silica glass and the production process therefor |
| US5651827A (en) * | 1996-01-11 | 1997-07-29 | Heraeus Quarzglas Gmbh | Single-wafer heat-treatment apparatus and method of manufacturing reactor vessel used for same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0633240B2 (en) | 1994-05-02 |
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