JPS5623741A - Quartz glass furnace core tube for manufacturing semiconductor - Google Patents

Quartz glass furnace core tube for manufacturing semiconductor

Info

Publication number
JPS5623741A
JPS5623741A JP9997579A JP9997579A JPS5623741A JP S5623741 A JPS5623741 A JP S5623741A JP 9997579 A JP9997579 A JP 9997579A JP 9997579 A JP9997579 A JP 9997579A JP S5623741 A JPS5623741 A JP S5623741A
Authority
JP
Japan
Prior art keywords
quartz glass
heat source
furnace core
core tube
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9997579A
Other languages
Japanese (ja)
Inventor
Masahiro Tsuji
Tsutomu Nishiwaki
Yasuo Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP9997579A priority Critical patent/JPS5623741A/en
Publication of JPS5623741A publication Critical patent/JPS5623741A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2201/00—Glass compositions
    • C03C2201/80—Glass compositions containing bubbles or microbubbles, e.g. opaque quartz glass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)

Abstract

PURPOSE:To obtain sufficiently regular heating property of the quartz glass furnace core tube by retaining air bubbles of predetermined size in the tube. CONSTITUTION:A transparent quartz glass can obtain very high pruity without air bubble, but since radiation from a heat source reaches directly the content, it is necessary to strictly retain the uniform heating property of the heat source. When quartz glass stock powder containing more than 50% of 20-60 mesh powder is used and filled in a rotary container to be heated and molten, the diameter of air bubble of spherical shape retained in the quartz glass is 10-50nm to form more than 5,000 of bubbles in the glass of 1cm<3>. In this manner, the radiation from the heat source is suitably scattered to uniformly heat the content without using a liner tube.
JP9997579A 1979-08-06 1979-08-06 Quartz glass furnace core tube for manufacturing semiconductor Pending JPS5623741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9997579A JPS5623741A (en) 1979-08-06 1979-08-06 Quartz glass furnace core tube for manufacturing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9997579A JPS5623741A (en) 1979-08-06 1979-08-06 Quartz glass furnace core tube for manufacturing semiconductor

Publications (1)

Publication Number Publication Date
JPS5623741A true JPS5623741A (en) 1981-03-06

Family

ID=14261659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9997579A Pending JPS5623741A (en) 1979-08-06 1979-08-06 Quartz glass furnace core tube for manufacturing semiconductor

Country Status (1)

Country Link
JP (1) JPS5623741A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812280U (en) * 1981-07-15 1983-01-26 東芝セラミツクス株式会社 Structure of quartz glass flange
JPS58148427A (en) * 1982-10-20 1983-09-03 Toshiba Ceramics Co Ltd Quartz glass core tube for manufacture of semiconductor
JPS61209854A (en) * 1985-03-13 1986-09-18 Hitachi Seiko Ltd Machine tool
JPS6245827U (en) * 1985-09-06 1987-03-19
JPS62259434A (en) * 1986-04-14 1987-11-11 Shinetsu Sekiei Kk Quartz glass jig
JPS6358822A (en) * 1986-08-29 1988-03-14 Shinetsu Sekiei Kk Wafer conveying and retaining jig made of silica glass
JPH01162234U (en) * 1988-04-26 1989-11-10
JPH0384922A (en) * 1989-08-29 1991-04-10 Shinetsu Sekiei Kk Quartz glass tube for heat treatment of semiconductor
JPH05900A (en) * 1991-08-23 1993-01-08 Toshiba Ceramics Co Ltd Furnace core tube for treating semiconductor made of quartz glass
JPH0774121A (en) * 1994-03-28 1995-03-17 Shinetsu Quartz Prod Co Ltd Quartz glass furnace core tube
JPH08162423A (en) * 1994-11-30 1996-06-21 Shinetsu Quartz Prod Co Ltd Single-wafer wafer heat treatment apparatus and method for manufacturing reaction vessel used in the apparatus
US5977000A (en) * 1995-01-25 1999-11-02 Shin-Etsu Quartz Products Co., Ltd. High purity opaque silica glass

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812280U (en) * 1981-07-15 1983-01-26 東芝セラミツクス株式会社 Structure of quartz glass flange
JPS58148427A (en) * 1982-10-20 1983-09-03 Toshiba Ceramics Co Ltd Quartz glass core tube for manufacture of semiconductor
JPS61209854A (en) * 1985-03-13 1986-09-18 Hitachi Seiko Ltd Machine tool
JPS6245827U (en) * 1985-09-06 1987-03-19
JPS62259434A (en) * 1986-04-14 1987-11-11 Shinetsu Sekiei Kk Quartz glass jig
JPS6358822A (en) * 1986-08-29 1988-03-14 Shinetsu Sekiei Kk Wafer conveying and retaining jig made of silica glass
JPH01162234U (en) * 1988-04-26 1989-11-10
JPH0384922A (en) * 1989-08-29 1991-04-10 Shinetsu Sekiei Kk Quartz glass tube for heat treatment of semiconductor
JPH05900A (en) * 1991-08-23 1993-01-08 Toshiba Ceramics Co Ltd Furnace core tube for treating semiconductor made of quartz glass
JPH0774121A (en) * 1994-03-28 1995-03-17 Shinetsu Quartz Prod Co Ltd Quartz glass furnace core tube
JPH08162423A (en) * 1994-11-30 1996-06-21 Shinetsu Quartz Prod Co Ltd Single-wafer wafer heat treatment apparatus and method for manufacturing reaction vessel used in the apparatus
US5977000A (en) * 1995-01-25 1999-11-02 Shin-Etsu Quartz Products Co., Ltd. High purity opaque silica glass

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