JPH0590132A - X-ray aligner - Google Patents

X-ray aligner

Info

Publication number
JPH0590132A
JPH0590132A JP3248828A JP24882891A JPH0590132A JP H0590132 A JPH0590132 A JP H0590132A JP 3248828 A JP3248828 A JP 3248828A JP 24882891 A JP24882891 A JP 24882891A JP H0590132 A JPH0590132 A JP H0590132A
Authority
JP
Japan
Prior art keywords
load lock
temperature
wafer
lock chamber
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3248828A
Other languages
Japanese (ja)
Inventor
Yoshiji Fujita
佳児 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3248828A priority Critical patent/JPH0590132A/en
Publication of JPH0590132A publication Critical patent/JPH0590132A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(57)【要約】 【目的】 高精度かつ高スループットが得られるX線露
光装置を提供することを目的としている。 【構成】 X線露光装置本体とこの露光装置にウェハを
供給するウェハ供給部分に雰囲気に置換するロードロッ
ク室において、ロードロック室内の温度変化を測定する
温度検出素子1と、ロードロック室内の圧力を計る圧力
検出素子2とロードロック室に任意な温度のHeを供給
することのできる温度調節機能の付いたHe供給部3
と、PWMで動作するHe供給バルブ4と、同じくPW
Mで動作する真空バルブ5と備えたことにより高精度か
つ高スループットが得られる。
(57) [Summary] [Objective] An object of the present invention is to provide an X-ray exposure apparatus capable of obtaining high precision and high throughput. A temperature detecting element 1 for measuring a temperature change in the load lock chamber and a pressure in the load lock chamber in a load lock chamber in which an atmosphere is substituted for a wafer supply portion for supplying a wafer to the X-ray exposure apparatus main body and the exposure apparatus. He supply unit 3 with a temperature control function capable of supplying He at an arbitrary temperature to the pressure detection element 2 for measuring the temperature and the load lock chamber.
And the He supply valve 4 operated by PWM, and the PW
By providing the vacuum valve 5 operating at M, high precision and high throughput can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えばシンクロトロン
放射光(以下SRと略する)等のX線を用いて露光を行
うX線露光装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray exposure apparatus for performing exposure using X-rays such as synchrotron radiation (hereinafter abbreviated as SR).

【0002】[0002]

【従来の技術】近年、半導体露光装置の光源としてSR
等のX線を利用することが注目されている。露光に用い
られるX線はふつう波長が1nm程度の軟X線である
が、この波長領域の軟X線は非常に激しく減衰するた
め、X線露光装置においてはX線の光路近傍あるいは装
置全体を密閉容器で密閉し、密閉容器内をHe等X線を
通しやすい気体で満たして露光を行うことが一般的とな
っている。このためウェハの供給はロードロック方式を
採用し、ウェハをいれたカセットをロードロック室にセ
ットし、室内を一旦真空にした後、Heを供給するよう
な方法が取られている。ここでロードロック室を一旦真
空にする際、室内は断熱膨張がおこり、温度が低下す
る。ロードロック室中にあるウェハの温度も同じく低下
しするが、マスクに対して1:1のプロキシミティー露
光でマスクとウェハの相対位置を精密に合わせるために
は、ウェハの温度変化による熱変形を極力防ぐか、熱変
形したウェハが元に戻るまで十分な安定時間をとるかす
る必要がある。このため、図2に示すように、従来はロ
ードロック室内にヒータ21を配し、断熱膨張によって
奪われる熱ヒータによって供給する方法が取られてい
た。
2. Description of the Related Art In recent years, SR has been used as a light source for a semiconductor exposure apparatus.
The use of such X-rays has been drawing attention. X-rays used for exposure are usually soft X-rays with a wavelength of about 1 nm, but soft X-rays in this wavelength range are attenuated extremely strongly, so in an X-ray exposure apparatus, the X-ray exposure path or the entire apparatus may be lost. It is common to seal with a closed container and fill the inside of the closed container with a gas such as He that allows easy passage of X-rays for exposure. Therefore, a wafer is supplied by a load lock system, a cassette containing the wafer is set in a load lock chamber, the chamber is once evacuated, and then He is supplied. Here, when the load lock chamber is once evacuated, adiabatic expansion occurs in the chamber and the temperature drops. The temperature of the wafer in the load lock chamber also drops, but in order to precisely align the relative position of the mask and the wafer with 1: 1 proximity exposure to the mask, thermal deformation due to the temperature change of the wafer is required. It is necessary to prevent it as much as possible or to allow a sufficient stabilization time for the thermally deformed wafer to return to its original state. For this reason, as shown in FIG. 2, conventionally, a method of arranging the heater 21 in the load lock chamber and supplying by a thermal heater taken away by adiabatic expansion has been adopted.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、図2に
示すような機構では、次のような問題点が生じていた。
すなわちまず、ロードロック室内が真空に近くなったと
き、熱を伝える媒体としての雰囲気がなくなり、ヒータ
から発生する熱はほとんどが伝熱の形で周囲の部材に影
響を与える。つまりロードロックのカセット内にセット
されたウェハは、ヒータからカセットを経てようやく伝
わることになる。したがってウェハ上にはなかなか熱が
伝わらず、伝わっても、温度の分布のむらが生じること
になる。また、ローダー,カセット,ウェハなど熱伝導
率が異なり、単にヒータを露光機本体の温度から決定さ
れる温度にしても、ウェハ上での温度は解からないとい
う問題があった。したがってマスクとウェハの重ね合わ
せ精度が上がらない、また温度安定のための時間が必要
になるなどの影響を与えていた。
However, the mechanism shown in FIG. 2 has the following problems.
That is, first, when the load lock chamber becomes close to a vacuum, the atmosphere as a medium for transferring heat disappears, and most of the heat generated from the heater affects the surrounding members in the form of heat transfer. That is, the wafer set in the cassette of the load lock is finally transmitted from the heater through the cassette. Therefore, heat is not easily transferred onto the wafer, and even if it is transferred, uneven temperature distribution occurs. In addition, there is a problem in that the temperature on the wafer cannot be determined even if the temperature of the loader, cassette, wafer, etc. is different and the heater is simply determined by the temperature of the main body of the exposure machine. Therefore, the overlay accuracy of the mask and the wafer is not improved, and it takes time to stabilize the temperature.

【0004】上記課題を解決するために、本発明はまず
熱の供給をHeからおこなう方法に変え、ロードロック
室内の温度と圧力によって、真空バルブおよびHe導入
バルブの開閉を自在にし、ロードロック室内のウェハの
温度変化を極力抑える機能を持つX線露光装置のロード
ロック室を提供するものである。
In order to solve the above problems, the present invention first changes the method of supplying heat from He so that the vacuum valve and the He introducing valve can be freely opened and closed depending on the temperature and pressure in the load lock chamber. The present invention provides a load lock chamber of an X-ray exposure apparatus having a function of suppressing the temperature change of the wafer as much as possible.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、本発明のX線露光装置のロードロック室は、温度検
出素子と、圧力検出素子と、温度調節機能の付いたHe
供給部と、Heを前記He供給部からロードロック室に
導入する、PWMで動作可能なバルブと、同じくPWM
で動作可能な真空バルブとを備えたことを特徴としてい
る。
In order to solve the above problems, a load lock chamber of an X-ray exposure apparatus according to the present invention is provided with a temperature detecting element, a pressure detecting element, and a He having a temperature adjusting function.
A supply unit, a valve that introduces He into the load lock chamber from the He supply unit and that can be operated by PWM, and the same PWM
It is characterized in that it is provided with a vacuum valve that can be operated at.

【0006】[0006]

【作用】以下、図3を用いてこの作用を説明する。図3
は本発明のX線露光装置のロードロック部分の簡略図で
あり、30がロードロックチャンバ、31はロードロッ
ク圧力検出素子、32がローダ、33がカセット、34
がウェハである。さらに35は温度検出用に装着したダ
ミーウェハ、36はダミーウェハ上につけられた温度検
出素子である。また37はロードロック室に任意な温度
のHeを供給する部分であり、38はそのためのPWM
で駆動されるバルブ、39は同じくPWMで駆動される
真空バルブである。真空引きをおこなうと、室内は断熱
膨張によって温度が低下するが、このとき、39の真空
バルブのPWMのデューティー比をさげ、代わりに38
のHe供給バルブのデューティー比を上げることによ
り、真空引きされるよりも流量は少なく、高温のHeを
供給することができ、これにより、断熱膨張による温度
低下が軽減される。バルブ38から供給されるHeの熱
量は、真空バルブ39とHe供給バルブ38のデューテ
ィー比で決まるが、この値を31からのロードロック室
の圧力と、36のダミーウェハ上の温度から決定するこ
とも可能で、この場合、置換動作を等温置換することさ
え可能となる。
The operation will be described below with reference to FIG. Figure 3
FIG. 3 is a simplified diagram of a load lock portion of the X-ray exposure apparatus of the present invention, where 30 is a load lock chamber, 31 is a load lock pressure detecting element, 32 is a loader, 33 is a cassette, and 34 is
Is the wafer. Further, 35 is a dummy wafer mounted for temperature detection, and 36 is a temperature detection element attached on the dummy wafer. Further, 37 is a portion for supplying He of an arbitrary temperature to the load lock chamber, and 38 is a PWM for that.
And a vacuum valve 39 also driven by PWM. When vacuuming is performed, the temperature in the room drops due to adiabatic expansion. At this time, the PWM duty ratio of the vacuum valve 39 is reduced to 38.
By increasing the duty ratio of the He supply valve of No. 2, it is possible to supply He at a higher flow rate and a smaller flow rate than that of being evacuated, thereby reducing the temperature decrease due to adiabatic expansion. The amount of heat of He supplied from the valve 38 is determined by the duty ratio of the vacuum valve 39 and the He supply valve 38, and this value may be determined from the pressure of the load lock chamber from 31 and the temperature on the dummy wafer 36. Yes, in this case it is even possible to perform the isothermal replacement operation.

【0007】以上のように本発明は上記した構成によっ
て、断熱膨張による温度低下を軽減でき、かつウェハを
均一に温度変化させることがでる。さらにウェハ温度を
正確に計測でき、ウェハ上の温度が本体と異なっていて
もこれを最小の時間で同じにすることも可能である。
As described above, according to the present invention, the temperature drop due to adiabatic expansion can be reduced and the temperature of the wafer can be uniformly changed by the above-mentioned structure. Further, the wafer temperature can be accurately measured, and even if the temperature on the wafer is different from that of the main body, it can be made the same in the minimum time.

【0008】[0008]

【実施例】以下本発明の一実施例のX線露光装置のロー
ドロックについて、図面を参照しながら説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A load lock of an X-ray exposure apparatus according to an embodiment of the present invention will be described below with reference to the drawings.

【0009】図1は本発明の第1の実施例におけるX線
露光装置である。図1において、1は温度測定素子(こ
の場合測温抵抗素子PT−100)、2は圧力センサー
である。また3は温度調節が可能なHe供給部であり、
4はPWMで動作可能なHe導入バルブ、5は同じくP
WMで動作可能な真空バルブである。さらに6はウェハ
カセット、7はウェハ、8はローダ、9はローダベー
ス、10はロードロックの外壁である。以上の様に構成
されたロードロック室について、以下、そのHe置換時
の動作について説明する。
FIG. 1 shows an X-ray exposure apparatus according to the first embodiment of the present invention. In FIG. 1, 1 is a temperature measuring element (in this case, a temperature measuring resistance element PT-100), and 2 is a pressure sensor. Further, 3 is a He supply unit capable of adjusting temperature,
4 is a He introducing valve that can be operated by PWM, and 5 is also P
It is a vacuum valve that can be operated by WM. Further, 6 is a wafer cassette, 7 is a wafer, 8 is a loader, 9 is a loader base, and 10 is an outer wall of a load lock. The operation of the load lock chamber configured as above when replacing He will be described below.

【0010】まず、He置換するときは真空バルブ5を
開放する。すなわちPWMのデューティー比を上げる。
するとロードロック室内の圧力は下がり、断熱膨張によ
って温度もさがる。ここで、ロードロック室の温度の低
下に伴い、供給するHeの温度を上げ、ロードロック室
の圧力の低下に伴って、He供給バルブのPWMのデュ
ーティー比を上げ、同時に真空バルブのPWMのデュー
ティー比を下げることにすると、ロードロックの室内は
一時的に圧力の減少が緩やかになり、室内の温度も上昇
する。これによって、ロードロック室内のウェハの温度
変化を極力おさえることは可能で、ウェハの温度との差
と供給するHe温度の関係および、バルブを開ける圧
力、デューティー比など実験により最適な条件を求めて
おけば、この置換時の真空引きのときほぼ等温変化をさ
せることも不可能ではない。
First, when He is replaced, the vacuum valve 5 is opened. That is, the duty ratio of PWM is increased.
Then, the pressure in the load lock chamber decreases, and the temperature also decreases due to adiabatic expansion. Here, the temperature of He to be supplied is increased as the temperature of the load lock chamber is decreased, and the PWM duty ratio of the He supply valve is increased as the pressure of the load lock chamber is decreased. At the same time, the PWM duty of the vacuum valve is increased. If the ratio is lowered, the pressure in the load lock chamber temporarily decreases gradually, and the temperature in the chamber also rises. As a result, it is possible to suppress the temperature change of the wafer in the load lock chamber as much as possible, and to find the optimum conditions through experiments such as the relationship between the difference between the wafer temperature and the He temperature to be supplied, the pressure for opening the valve, and the duty ratio. In other words, it is not impossible to change the temperature substantially isothermally during evacuation during the replacement.

【0011】以上のように本実施例によれば、ロードロ
ック室内に、温度検出素子と、圧力検出素子と、任意な
温度にHeの温度を設定できる温度調節機能の付いたH
e供給部と、PWMで動作するHe導入バルブと、同じ
くPWMで動作する真空バルブを備え、He導入バルブ
と真空バルブのPWMのデューティー比を、ロードロッ
ク室内の温度と圧力とによって、変えることにより、ロ
ードロック内のウェハ上の温度変化を極力抑えることが
できるロードロックを提供することができる。
As described above, according to this embodiment, the temperature detecting element, the pressure detecting element, and the H with the temperature adjusting function capable of setting the temperature of He to an arbitrary temperature are provided in the load lock chamber.
An e supply unit, a He introducing valve that operates by PWM, and a vacuum valve that also operates by PWM are provided, and by changing the PWM duty ratio of the He introducing valve and the vacuum valve according to the temperature and pressure inside the load lock chamber, It is possible to provide a load lock capable of suppressing the temperature change on the wafer in the load lock as much as possible.

【0012】[0012]

【発明の効果】以上のように本発明は、ウェハロードロ
ックの置換時にウェハの温度変化を少なく制御できるの
で、温度の変化によるマスクとウェハの重ね合わせ精度
の劣化を防止でき、また温度安定のための時間を少なく
することができるため、X線露光機として、高精度かつ
高スループットが望める。
As described above, according to the present invention, since the temperature change of the wafer can be controlled to be small when the wafer load lock is replaced, the deterioration of the overlay accuracy of the mask and the wafer due to the temperature change can be prevented, and the temperature stability can be improved. Since the time required for the X-ray exposure can be reduced, high precision and high throughput can be expected for the X-ray exposure machine.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるロードロック装置の
構成図
FIG. 1 is a configuration diagram of a load lock device according to an embodiment of the present invention.

【図2】従来のロードロック装置の構成図FIG. 2 is a block diagram of a conventional load lock device.

【図3】本発明のロードロック簡略構成図FIG. 3 is a simplified block diagram of the load lock of the present invention.

【符号の説明】[Explanation of symbols]

1 温度測定素子 2 圧力センサ 3 温度調節が可能なHeの供給部 4 He導入バルブ 5 真空バルブ 6 ウェハカセット 7 ウェハ 8 ローダ 9 ローダベース 10 ロードロック外壁 20 ロードロック外壁 21 ヒータ 22 ウェハカセット 23 ウェハ 24 空気供給部 25 He供給部 26 真空引きバルブ 27 ローダ 28 ローダベース 29 メインチャンバ 30 ロードロック室外壁 31 圧力センサ 32 ローダ 33 ウェハカセット 34 ウェハ 35 ダミーウェハ 36 温度検出素子 37 温度調節付きHe供給部 38 He導入バルブ 39 真空バルブ DESCRIPTION OF SYMBOLS 1 Temperature measuring element 2 Pressure sensor 3 He supply part capable of adjusting temperature 4 He introduction valve 5 Vacuum valve 6 Wafer cassette 7 Wafer 8 Loader 9 Loader base 10 Load lock outer wall 20 Load lock outer wall 21 Heater 22 Wafer cassette 23 Wafer 24 Air supply unit 25 He supply unit 26 Vacuuming valve 27 Loader 28 Loader base 29 Main chamber 30 Load lock chamber outer wall 31 Pressure sensor 32 Loader 33 Wafer cassette 34 Wafer 35 Dummy wafer 36 Temperature detection element 37 Temperature control He supply unit 38 He introduction Valve 39 Vacuum valve

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 X線露光装置本体にウェハを供給するウ
ェハ供給部分として、雰囲気を置換する機能を持つロー
ドロック室を配置したX線露光装置において、このロー
ドロック室内に、温度検出素子と、圧力検出素子と、温
度調節機能の付いたHe供給部と、Heを前記He供給
部からロードロック室に導入する、パルス幅変調(以後
PWMと略す)で動作可能なバルブと、同じくPWMで
動作可能な真空バルブとを備えたことを特徴とするX線
露光装置。
1. An X-ray exposure apparatus having a load lock chamber having a function of replacing an atmosphere as a wafer supply portion for supplying a wafer to an X-ray exposure apparatus main body, wherein a temperature detection element and a temperature detection element are provided in the load lock chamber. A pressure detection element, a He supply unit with a temperature control function, a valve that can operate by pulse width modulation (hereinafter abbreviated as PWM) that introduces He into the load lock chamber from the He supply unit, and also operates by PWM An X-ray exposure apparatus, which is provided with a possible vacuum valve.
JP3248828A 1991-09-27 1991-09-27 X-ray aligner Pending JPH0590132A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3248828A JPH0590132A (en) 1991-09-27 1991-09-27 X-ray aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3248828A JPH0590132A (en) 1991-09-27 1991-09-27 X-ray aligner

Publications (1)

Publication Number Publication Date
JPH0590132A true JPH0590132A (en) 1993-04-09

Family

ID=17184030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3248828A Pending JPH0590132A (en) 1991-09-27 1991-09-27 X-ray aligner

Country Status (1)

Country Link
JP (1) JPH0590132A (en)

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