JPH0590174A - Method of manufacturing soi substrate - Google Patents
Method of manufacturing soi substrateInfo
- Publication number
- JPH0590174A JPH0590174A JP25191791A JP25191791A JPH0590174A JP H0590174 A JPH0590174 A JP H0590174A JP 25191791 A JP25191791 A JP 25191791A JP 25191791 A JP25191791 A JP 25191791A JP H0590174 A JPH0590174 A JP H0590174A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- opening
- crystal layer
- semiconductor
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 108
- 239000013078 crystal Substances 0.000 claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 15
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 70
- 239000010410 layer Substances 0.000 description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＳＯＩ基板の製法に関す
る。さらに詳しくは、半導体基板上に形成した絶縁膜上
に、該半導体基板の半導体結晶をシードとしてエピタキ
シャル成長により半導体結晶層を形成するＳＯＩ基板の
製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an SOI substrate manufacturing method. More specifically, the present invention relates to a method for manufacturing an SOI substrate, in which a semiconductor crystal layer is formed by epitaxial growth using a semiconductor crystal of the semiconductor substrate as a seed on an insulating film formed on the semiconductor substrate.
【０００２】なお、本明細書においては、ＳＯＩを絶縁
膜上の半導体結晶層の意味で使用し、シリコン半導体に
限定されず、広く半導体を含む意味で使用する。In the present specification, SOI is used to mean a semiconductor crystal layer on an insulating film, and is not limited to a silicon semiconductor but is used broadly to include a semiconductor.
【０００３】[0003]
【従来の技術】従来、絶縁基板上に半導体結晶層を形成
したＳＯＩ基板は、半導体結晶基板に酸素原子を打ち込
み、熱処理により半導体結晶基板中に絶縁層を形成す
る、ＳＩＭＯＸ(Separation by Implanted Oxygen)法や
半導体基板上に形成した絶縁膜に開口部を形成し、露出
した半導体基板の半導体結晶をシードとして絶縁膜上に
半導体結晶層をエピタキシャル成長させる方法がとられ
ている。2. Description of the Related Art Conventionally, an SOI substrate in which a semiconductor crystal layer is formed on an insulating substrate is formed by implanting oxygen atoms into the semiconductor crystal substrate and forming an insulating layer in the semiconductor crystal substrate by heat treatment, SIMOX (Separation by Implanted Oxygen). Method or a method in which an opening is formed in an insulating film formed on a semiconductor substrate and a semiconductor crystal layer is epitaxially grown on the insulating film using the exposed semiconductor crystal of the semiconductor substrate as a seed.
【０００４】エピタキシャル成長により形成した従来の
ＳＯＩ基板の断面図を図２に示す。このＳＯＩ基板の製
法は半導体基板１上に絶縁膜２を形成し、レジスト膜に
より開口部３を形成し、エピタキシャル成長することに
より、開口部３に露出した半導体結晶を起点として半導
体結晶が成長し、開口部３内に半導体結晶層４が形成さ
れ、さらにエピタキシャル成長を続けると、絶縁膜２上
にエピタキシャル成長が延び、絶縁膜２の上に半導体結
晶層４が成長し、絶縁膜２上に半導体結晶層の形成され
たＳＯＩ基板がえられる。A cross-sectional view of a conventional SOI substrate formed by epitaxial growth is shown in FIG. In this SOI substrate manufacturing method, an insulating film 2 is formed on a semiconductor substrate 1, an opening 3 is formed of a resist film, and epitaxial growth is performed to grow a semiconductor crystal starting from the semiconductor crystal exposed in the opening 3, When the semiconductor crystal layer 4 is formed in the opening 3 and the epitaxial growth is further continued, the epitaxial growth extends on the insulating film 2, the semiconductor crystal layer 4 grows on the insulating film 2, and the semiconductor crystal layer on the insulating film 2. Thus, the SOI substrate on which is formed is obtained.
【０００５】[0005]
【発明が解決しようとする課題】しかし、従来のＳＩＭ
ＯＸ法によりＳＯＩ基板をうる方法は、酸素原子注入に
よる、半導体結晶の損傷（結晶欠陥の発生）という問題
がある。また、従来の半導体基板上に形成した絶縁膜に
開口部を設けて、エピタキシャル成長により形成する半
導体結晶層は、半導体基板をエピタキシャル成長のシー
ドとするため、絶縁膜に形成した開口部をとおして絶縁
膜の下の半導体基板と接続されており、完全なＳＯＩ基
板にならない。そのため完全なＳＯＩ基板にするために
は、開口部を除いた部分のみを使用しなければならず、
小さな基板になるという問題がある。However, the conventional SIM
The method of obtaining an SOI substrate by the OX method has a problem of damage to semiconductor crystals (generation of crystal defects) due to implantation of oxygen atoms. In addition, since a semiconductor crystal layer formed by epitaxial growth by providing an opening in an insulating film formed on a conventional semiconductor substrate uses the semiconductor substrate as a seed for epitaxial growth, the insulating film is formed through the opening formed in the insulating film. It is connected to the semiconductor substrate below and does not become a complete SOI substrate. Therefore, in order to make a complete SOI substrate, it is necessary to use only the portion excluding the opening,
There is a problem that it becomes a small substrate.
【０００６】本発明はこのような状況に鑑み、絶縁膜上
にエピタキシャル成長で形成された半導体結晶層が絶縁
膜下の半導体基板と完全に隔離されたＳＯＩ構造の基板
を形成することを目的とする。In view of such circumstances, it is an object of the present invention to form a substrate having an SOI structure in which a semiconductor crystal layer formed by epitaxial growth on an insulating film is completely isolated from a semiconductor substrate below the insulating film. ..
【０００７】本発明の他の目的は基板への開口部のない
大面積のＳＯＩ構造を形成すると共に、ＳＯＩ基板を多
段に形成して３次元ＩＣの層間絶縁を容易にすることに
ある。Another object of the present invention is to form a large-area SOI structure having no opening to the substrate and to form an SOI substrate in multiple stages to facilitate interlayer insulation of a three-dimensional IC.
【０００８】本発明の更に他の目的は、単結晶基板化が
困難な半導体材料の基板形成を容易になしうる方法を提
供することにある。Still another object of the present invention is to provide a method capable of easily forming a substrate of a semiconductor material which is difficult to form into a single crystal substrate.
【０００９】[0009]
【課題を解決するための手段】本発明によるＳＯＩ基板
の製法は、半導体基板上に形成した絶縁膜に第１の開口
部を形成し、該第１の開口部および前記絶縁膜上に該第
１の開口部により露出した半導体結晶をシードとしてエ
ピタキシャル成長することにより半導体結晶層を形成す
る工程と、該半導体結晶層の前記第１の開口部の部分を
除去し第２の開口部を形成する工程と、該第２の開口部
により露出した前記半導体基板上に開口部絶縁膜を形成
して前記絶縁膜と連結する工程と、前記開口部絶縁膜を
形成する際に前記半導体結晶層に形成された結晶成長層
酸化膜を除去する工程と、前記第２の開口部に形成され
た開口部絶縁膜および前記半導体結晶層上に前記エピタ
キシャル成長により形成された半導体結晶をシードとし
てさらに半導体結晶をエピタキシャル成長する工程とか
らなることを特徴とする。According to the method of manufacturing an SOI substrate of the present invention, a first opening is formed in an insulating film formed on a semiconductor substrate, and the first opening is formed on the first opening and the insulating film. Forming a semiconductor crystal layer by epitaxially growing the semiconductor crystal exposed by the first opening as a seed; and removing a portion of the first opening of the semiconductor crystal layer to form a second opening. A step of forming an opening insulating film on the semiconductor substrate exposed by the second opening and connecting the opening insulating film to the insulating film; and forming the opening insulating film on the semiconductor crystal layer when forming the opening insulating film. And removing the oxide film of the crystal growth layer, and further using the opening insulating film formed in the second opening and the semiconductor crystal formed by the epitaxial growth on the semiconductor crystal layer as a seed to further form a semiconductor crystal. Characterized by comprising from a step of epitaxial growth.
【００１０】[0010]
【作用】本発明によれば、絶縁膜に設けた開口部に、露
出した半導体基板をシードとして半導体結晶層をエピタ
キシャル成長させたのち、前記開口部のエピタキシャル
成長した半導体結晶層を除去して、再度絶縁膜と半導体
結晶層をエピタキシャル成長しているため、絶縁膜上に
エピタキシャル成長した半導体結晶層は絶縁膜下の半導
体基板と完全に隔離されており、広い面積のＳＯＩ基板
をえられる。According to the present invention, a semiconductor crystal layer is epitaxially grown in the opening provided in the insulating film using the exposed semiconductor substrate as a seed, and then the epitaxially grown semiconductor crystal layer in the opening is removed and insulation is performed again. Since the film and the semiconductor crystal layer are epitaxially grown, the semiconductor crystal layer epitaxially grown on the insulating film is completely isolated from the semiconductor substrate under the insulating film, and an SOI substrate having a large area can be obtained.
【００１１】さらに本発明によれば、開口部絶縁膜を形
成する際にエピタキシャル成長した半導体結晶層の表面
にも絶縁膜を形成させてのち除去し再度全面にエピタキ
シャル成長するため、工程数が削減され、厚い半導体結
晶層をえられる。Further, according to the present invention, since the insulating film is formed on the surface of the semiconductor crystal layer epitaxially grown when the opening insulating film is formed, the insulating film is removed, and then the entire surface is epitaxially grown again, the number of steps is reduced. A thick semiconductor crystal layer can be obtained.
【００１２】[0012]
【実施例】つぎに、図面を参照しながら本発明について
詳細に説明する。図１は本発明の一実施例であるＳＯＩ
基板の製法を示す工程図である。The present invention will be described in detail with reference to the drawings. FIG. 1 shows an SOI according to an embodiment of the present invention.
It is a flowchart showing a manufacturing method of a substrate.
【００１３】まず図１のａ工程に示すように半導体基板
上に形成した絶縁膜２に第１の開口部３を形成し、その
第１の開口部３および絶縁膜２上に半導体基板１の結晶
をシードとして、半導体結晶層４をエピタキシャル成長
する。具体例としては、シリコン半導体基板１の表面に
絶縁膜２であるシリコン酸化膜をたとえばＣＶＤ法によ
り0.5 μｍ形成し、ホトレジストにより部分的にエッチ
ング除去して第１の開口部３を形成する。第１の開口部
３により露出したシリコン半導体基板をシードとして半
導体結晶層４である炭化ケイ素（ＳｉＣ）をエピタキシ
ャル成長する。この炭化ケイ素はシリコンと同種の性質
を有するため、露出した半導体基板のシリコン結晶をシ
ードとしてエピタキシャル成長する。したがって、最初
のうちはシリコン酸化膜の腐蝕除去された開口部３のみ
に縦方向に選択的にエピタキシャル成長し、第１の開口
部３内のエピタキシャル成長が完了し、シリコン酸化膜
と同じ高さの位置までエピタキシャル成長が行われる
と、引き続き絶縁膜２上を横方向にエピタキシャル成長
すると共に、縦方向にもエピタキシャル成長が行われ、
図１のａ工程に示すように炭化ケイ素の半導体結晶層４
が形成される。First, as shown in step a of FIG. 1, a first opening 3 is formed in an insulating film 2 formed on a semiconductor substrate, and the semiconductor substrate 1 is formed on the first opening 3 and the insulating film 2. The semiconductor crystal layer 4 is epitaxially grown using the crystal as a seed. As a specific example, a silicon oxide film which is the insulating film 2 is formed on the surface of the silicon semiconductor substrate 1 by 0.5 μm, for example, by the CVD method, and is partially removed by etching with a photoresist to form the first opening 3. Silicon carbide (SiC) which is the semiconductor crystal layer 4 is epitaxially grown using the silicon semiconductor substrate exposed by the first opening 3 as a seed. Since this silicon carbide has the same properties as silicon, it is epitaxially grown using the exposed silicon crystal of the semiconductor substrate as a seed. Therefore, initially, the epitaxial growth is selectively performed in the vertical direction only in the opening 3 from which the silicon oxide film has been corroded and removed, and the epitaxial growth in the first opening 3 is completed. When the epitaxial growth is performed up to, the epitaxial growth is continuously performed on the insulating film 2 in the horizontal direction and also in the vertical direction.
As shown in step a of FIG. 1, a semiconductor crystal layer 4 of silicon carbide
Is formed.
【００１４】つぎに、図１のｂ〜ｃ工程に示すように、
半導体結晶層４の前記第１の開口部３の部分を除去し、
第２の開口部７を形成する。具体例としては、炭化ケイ
素の半導体結晶層４の表面にレジスト膜６を塗布し開口
部３よりアライメントのマージン分大きめのマスクを用
いてレジストパターンを形成する（図１のｂ工程）。つ
いで、パターン形成したレジストをマスクとして反応性
イオンエッチング（ＲＩＥ）法で、レジスト膜６の目抜
かれた部分の、炭化ケイ素の半導体結晶層４を除去し、
第２の開口部７を形成する（図１のｃ工程）。Next, as shown in steps b to c of FIG.
A portion of the first opening 3 of the semiconductor crystal layer 4 is removed,
The second opening 7 is formed. As a specific example, a resist film 6 is applied to the surface of the semiconductor crystal layer 4 of silicon carbide, and a resist pattern is formed using a mask having a larger margin for alignment than the opening 3 (step b in FIG. 1). Then, by using the patterned resist as a mask, the silicon carbide semiconductor crystal layer 4 in the cut-out portion of the resist film 6 is removed by a reactive ion etching (RIE) method,
The second opening 7 is formed (step c in FIG. 1).
【００１５】つぎに、第２の開口部７により露出した半
導体基板１上に開口部絶縁膜８を形成してａ工程で形成
した絶縁膜２と連結する。具体例としては、1000℃で70
分位の熱処理をすると、半導体基板１上にシリコンが酸
化され、ａ工程で形成した絶縁膜２とほぼ同じ厚さまで
酸化膜が形成され、開口部絶縁膜８が形成される。この
際、炭化ケイ素結晶成長層の表面および第２の開口部の
側面は、酸化され、結晶成長層酸化膜９が形成される。
しかし炭化ケイ素の酸化レートはシリコンに比べて約１
／５と遅いため、結晶成長層酸化膜９の厚さは非常に薄
い（図１のｄ工程）。この開口部絶縁膜８の形成は酸化
法でなくＣＶＤ法などで形成してもよい。Next, an opening insulating film 8 is formed on the semiconductor substrate 1 exposed by the second opening 7 and is connected to the insulating film 2 formed in the step a. As a specific example, 70 at 1000 ° C
When the quartile heat treatment is performed, silicon is oxidized on the semiconductor substrate 1, an oxide film is formed to a thickness almost the same as the insulating film 2 formed in the step a, and the opening insulating film 8 is formed. At this time, the surface of the silicon carbide crystal growth layer and the side surface of the second opening are oxidized to form a crystal growth layer oxide film 9.
However, the oxidation rate of silicon carbide is about 1 compared to silicon.
Since it is as slow as / 5, the thickness of the crystal growth layer oxide film 9 is very thin (step d in FIG. 1). The opening insulating film 8 may be formed by a CVD method or the like instead of the oxidation method.
【００１６】つぎに図１のｅ工程に示すように、半導体
結晶層４の表面および第２の開口部７に形成された結晶
成長層酸化膜９を除去する。具体的には、９％濃度のフ
ッ酸溶液でウェットエッチングによってエピタキシャル
成長した炭化ケイ素成長層４の側面にダメージを与えな
いように結晶成長層酸化膜９を除去し、表面および横方
向の結晶面10を露出させる（図１のｅ工程）。前工程で
ＣＶＤ法により開口部絶縁膜８が形成されたばあいは、
この工程は必要ない。Next, as shown in step e of FIG. 1, the crystal growth layer oxide film 9 formed on the surface of the semiconductor crystal layer 4 and the second opening 7 is removed. Specifically, the crystal growth layer oxide film 9 is removed so as not to damage the side surfaces of the silicon carbide growth layer 4 epitaxially grown by wet etching with a hydrofluoric acid solution having a concentration of 9%. Is exposed (step e in FIG. 1). When the opening insulating film 8 is formed by the CVD method in the previous step,
This step is not necessary.
【００１７】そののち、再度炭化ケイ素の第２の半導体
結晶層11をエピタキシャル成長により形成する。このエ
ピタキシャル成長は第２の開口部７では半導体結晶層４
の第２の開口部７側で横方向にエピタキシャル成長する
と共に、露出した半導体結晶層４の表面および第２の開
口部７で横方向に成長したエピタキシャル成長層をシー
ドとして縦方向にもエピタキシャル成長し、第２の半導
体結晶層11が形成される。具体的には、ジシラン（Ｓｉ
2 Ｈ6）、アセチレン（Ｃ2 Ｈ2 ）のガスを導入して気
相反応させると、結晶面10が露出した表面および側面か
ら炭化ケイ素の半導体結晶が縦並びに横方向にエピタキ
シャル成長し、第２の開口部７の開口部絶縁膜８並びに
半導体結晶層４上に炭化ケイ素の第２の半導体結晶層11
が形成され、第２の開口部７が塞がれると共に半導体結
晶層が厚く形成される（図１のｆ工程）。この際、炭化
ケイ素結晶層の表面には酸化防止膜など不要な膜はない
ので、この工程でＳＯＩ基板の製法が完了する。After that, the second semiconductor crystal layer 11 of silicon carbide is again formed by epitaxial growth. This epitaxial growth is caused by the semiconductor crystal layer 4 in the second opening 7.
While laterally epitaxially growing on the side of the second opening 7 of the semiconductor crystal layer 4 and also by using the exposed surface of the semiconductor crystal layer 4 and the epitaxial growth layer laterally grown in the second opening 7 as seeds, epitaxial growth is also performed vertically. The second semiconductor crystal layer 11 is formed. Specifically, disilane (Si
2 H 6 ), an acetylene (C 2 H 2 ) gas is introduced to cause a gas phase reaction, a semiconductor crystal of silicon carbide is epitaxially grown vertically and horizontally from the surface and the side surface where the crystal face 10 is exposed. The second semiconductor crystal layer 11 of silicon carbide is formed on the opening insulating film 8 of the opening 7 and the semiconductor crystal layer 4.
Are formed, the second opening 7 is closed, and the semiconductor crystal layer is formed thick (step f in FIG. 1). At this time, since there is no unnecessary film such as an antioxidant film on the surface of the silicon carbide crystal layer, the manufacturing method of the SOI substrate is completed in this step.
【００１８】前述の具体例では、シリコン半導体基板に
対して炭化ケイ素の半導体結晶層をエピタキシャル成長
する例で説明し、ｄ工程の開口部絶縁膜８を形成するの
に酸化法で行ったので、炭化ケイ素の酸化レートが遅
く、そのあとの工程で炭化ケイ素の酸化膜を除去するの
に薄い膜を除去するだけで半導体結晶層を露出させるこ
とができたが、この組み合わせに限定されるものではな
い。たとえばシリコン半導体基板をシードとしてシリコ
ン半導体結晶層を絶縁膜上に形成すると、開口部に絶縁
膜を形成するのに酸化法で行うと、基板と結晶層の酸化
レートが同じため厚い酸化膜が形成される。この厚い酸
化膜を腐蝕除去するためには、開口部絶縁膜にマスクを
して開口部絶縁膜は余り腐蝕されないようにしておく必
要がある。また、シリコン半導体結晶層が沢山酸化され
て腐蝕除去されるため、予めシリコン半導体結晶層を厚
く形成しておく必要がある。しかしこれらの点を考慮す
ればシリコン半導体基板上の絶縁膜にシリコン半導体結
晶層を形成するばあいでも本発明を適用することができ
る。In the above-described specific example, an example in which a semiconductor crystal layer of silicon carbide is epitaxially grown on a silicon semiconductor substrate has been described. Since the oxidation insulating method is used to form the opening insulating film 8 in step d, carbonization is performed. The oxidation rate of silicon was slow, and the semiconductor crystal layer could be exposed only by removing a thin film to remove the oxide film of silicon carbide in the subsequent process, but the combination is not limited to this combination. .. For example, if a silicon semiconductor crystal layer is formed on an insulating film using a silicon semiconductor substrate as a seed, if an oxidation method is used to form the insulating film in the opening, a thick oxide film is formed because the substrate and the crystal layer have the same oxidation rate. To be done. In order to corrode and remove this thick oxide film, it is necessary to mask the opening insulating film so that the opening insulating film is not corroded so much. In addition, since the silicon semiconductor crystal layer is oxidized and removed by corrosion, it is necessary to form the silicon semiconductor crystal layer thick in advance. However, considering these points, the present invention can be applied even when the silicon semiconductor crystal layer is formed on the insulating film on the silicon semiconductor substrate.
【００１９】またエピタキシャル成長する半導体材料と
しては、前述の例の他にＳｉＧｅやＡｌＧａＡｓなどの
化合物半導体でも同様に形成できることはいうまでもな
い。さらに半導体基板としてもシリコン単結晶半導体の
他に単結晶炭化ケイ素でも同様に形成できることはいう
までもない。Needless to say, as the semiconductor material for epitaxial growth, a compound semiconductor such as SiGe or AlGaAs can be similarly formed in addition to the above examples. Further, it goes without saying that a single crystal silicon carbide can be similarly formed as the semiconductor substrate in addition to the silicon single crystal semiconductor.
【００２０】[0020]
【発明の効果】以上説明したように、本発明によれば酸
化防止膜の形成、除去など複雑な工程を必要とせず、少
ない工程で広面積にわたってエピタキシャル成長により
形成した半導体結晶層を絶縁膜上に形成できる。しかも
成長した半導体結晶層を半導体基板から完全に分離して
形成でき、ＳＩＭＯＸ法によるのと同様に大きなＳＯＩ
基板をえられる。As described above, according to the present invention, a semiconductor crystal layer formed by epitaxial growth over a wide area with a small number of steps is formed on an insulating film without requiring complicated steps such as formation and removal of an antioxidant film. Can be formed. Moreover, the grown semiconductor crystal layer can be formed completely separated from the semiconductor substrate, and a large SOI can be formed as in the SIMOX method.
You can get the board.
【００２１】また、本発明によればエピタキシャル成長
により絶縁膜上に半導体結晶層を形成できるため、たと
えば単結晶基板を作製しにくい炭化ケイ素材料でも、同
種のシリコン半導体基板をシードとして容易に絶縁膜上
に基板を形成できる。Further, according to the present invention, since the semiconductor crystal layer can be formed on the insulating film by epitaxial growth, for example, even with a silicon carbide material which is difficult to form a single crystal substrate, the same kind of silicon semiconductor substrate can be used as a seed to easily form the insulating film on the insulating film. A substrate can be formed on the substrate.
【００２２】さらに半導体デバイスの製造と同じプロセ
スで形成できるため、たとえば半導体基板にＩＣ回路を
形成し、その上に本発明による絶縁膜を形成して半導体
結晶層を形成し、再度ＩＣ回路を形成することができ、
ＩＣ回路を形成した半導体基板を何層も重ねた立体的半
導体装置をえられる。Further, since it can be formed by the same process as that of manufacturing a semiconductor device, for example, an IC circuit is formed on a semiconductor substrate, an insulating film according to the present invention is formed thereon to form a semiconductor crystal layer, and the IC circuit is formed again. You can
It is possible to obtain a three-dimensional semiconductor device in which many layers of semiconductor substrates each having an IC circuit are stacked.
【図１】本発明の一実施例であるＳＯＩ基板の製造工程
を示す図である。FIG. 1 is a diagram showing a manufacturing process of an SOI substrate which is an embodiment of the present invention.
【図２】従来のエピタキシャル成長法により製造したＳ
ＯＩ基板の断面図である。FIG. 2 S produced by a conventional epitaxial growth method
It is sectional drawing of an OI substrate.
１ 半導体基板 ２ 絶縁膜 ３ 第１の開口部 ４ 半導体結晶層 ７ 第２の開口部 ８ 開口部絶縁膜 ９ 結晶成長層酸化膜 1 semiconductor substrate 2 insulating film 3 first opening 4 semiconductor crystal layer 7 second opening 8 opening insulating film 9 crystal growth layer oxide film
Claims (1)
開口部を形成し、該第１の開口部および前記絶縁膜上に
該第１の開口部により露出した半導体結晶をシードとし
てエピタキシャル成長することにより半導体結晶層を形
成する工程と、該半導体結晶層の前記第１の開口部の部
分を除去し第２の開口部を形成する工程と、該第２の開
口部により露出した前記半導体基板上に開口部絶縁膜を
形成して前記絶縁膜と連結する工程と、前記開口部絶縁
膜を形成する際に前記半導体結晶層に形成された結晶成
長層酸化膜を除去する工程と、前記第２の開口部に形成
された開口部絶縁膜および前記半導体結晶層上に前記エ
ピタキシャル成長により形成された半導体結晶をシード
としてさらに半導体結晶をエピタキシャル成長する工程
とからなるＳＯＩ基板の製法。1. A first opening is formed in an insulating film formed on a semiconductor substrate, and epitaxial growth is performed by using the semiconductor crystal exposed by the first opening and the first opening on the insulating film as a seed. To form a semiconductor crystal layer, a step of removing a portion of the first opening of the semiconductor crystal layer to form a second opening, and the semiconductor exposed by the second opening. Forming an opening insulating film on a substrate and connecting to the insulating film; removing a crystal growth layer oxide film formed in the semiconductor crystal layer when forming the opening insulating film; An SOI base comprising a step of epitaxially growing a semiconductor crystal using the opening insulating film formed in the second opening and the semiconductor crystal formed by the epitaxial growth on the semiconductor crystal layer as a seed. How to make a board.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25191791A JPH0590174A (en) | 1991-09-30 | 1991-09-30 | Method of manufacturing soi substrate |
| US07/901,629 US5208167A (en) | 1991-09-30 | 1992-06-19 | Method for producing SOI substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25191791A JPH0590174A (en) | 1991-09-30 | 1991-09-30 | Method of manufacturing soi substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0590174A true JPH0590174A (en) | 1993-04-09 |
Family
ID=17229889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25191791A Pending JPH0590174A (en) | 1991-09-30 | 1991-09-30 | Method of manufacturing soi substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0590174A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008131399A1 (en) * | 2007-04-23 | 2008-10-30 | Texas Instruments Incorporated | Semiconductor device manufactured using an oxygenated passivation process during high density plasma deposition |
-
1991
- 1991-09-30 JP JP25191791A patent/JPH0590174A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008131399A1 (en) * | 2007-04-23 | 2008-10-30 | Texas Instruments Incorporated | Semiconductor device manufactured using an oxygenated passivation process during high density plasma deposition |
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