JPH0590177A - Wafer heater - Google Patents
Wafer heaterInfo
- Publication number
- JPH0590177A JPH0590177A JP27696991A JP27696991A JPH0590177A JP H0590177 A JPH0590177 A JP H0590177A JP 27696991 A JP27696991 A JP 27696991A JP 27696991 A JP27696991 A JP 27696991A JP H0590177 A JPH0590177 A JP H0590177A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- auxiliary
- temperature
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 3
- 238000000034 method Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 19
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体製造装置の１つで
あるＣＶＤ（化学蒸着）装置に係り、特に枚葉式ＣＶＤ
装置に使用されるウェーハ加熱用ヒータに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD (Chemical Vapor Deposition) apparatus, which is one of semiconductor manufacturing apparatuses, and more particularly to a single wafer CVD.
The present invention relates to a wafer heating heater used in an apparatus.
【０００２】[0002]
【従来の技術】半導体製造工程の１つに、シリコンウェ
ーハを低圧反応ガス雰囲気中で加熱し、ウェーハ表面に
反応生成物を蒸着させる工程（ＣＶＤ）がある。この反
応生成物を蒸着させるＣＶＤ装置として、ウェーハを１
枚ずつ処理する枚葉式のＣＶＤ装置がある。2. Description of the Related Art One of semiconductor manufacturing processes is a process (CVD) in which a silicon wafer is heated in a low-pressure reaction gas atmosphere to deposit a reaction product on the surface of the wafer. A wafer is used as a CVD device for depositing this reaction product.
There is a single-wafer CVD apparatus that processes each wafer.
【０００３】図４は本発明の対象となる枚葉式ＣＶＤ装
置の１例を示す構成説明図、図５は図４におけるヒータ
の１例を示す平面図、図６はその正面図である。図４に
おいて反応室４内にウェーハ置台５が設けられ、このウ
ェーハ置台５上にサセプタ６が設けられており、このサ
セプタ６上にウェーハ７が載置されている。FIG. 4 is a structural explanatory view showing an example of a single-wafer CVD apparatus to which the present invention is applied, FIG. 5 is a plan view showing an example of the heater in FIG. 4, and FIG. 6 is a front view thereof. In FIG. 4, a wafer table 5 is provided in the reaction chamber 4, a susceptor 6 is provided on the wafer table 5, and a wafer 7 is placed on the susceptor 6.
【０００４】ウェーハ置台５の下方に抵抗加熱型ヒータ
１が設けられており、このヒータ１によりサセプタ６が
加熱され、更にウェーハ７が加熱される。ウェーハ７の
上方の反応室４上壁には反応ガスを噴出するノズル８が
固定されている。A resistance heating type heater 1 is provided below the wafer table 5. The heater 1 heats the susceptor 6 and further heats the wafer 7. A nozzle 8 for ejecting a reaction gas is fixed to the upper wall of the reaction chamber 4 above the wafer 7.
【０００５】このような枚葉式ＣＶＤ装置は、反応室４
内を減圧し、ノズル８より反応ガスを噴出すると共にヒ
ータ１によりサセプタ６を介してウェーハ７を加熱し、
ウェーハ表面にＣＶＤ膜を生成する装置である。Such a single-wafer CVD apparatus has a reaction chamber 4
The inside is decompressed, the reaction gas is jetted from the nozzle 8, and the wafer 1 is heated by the heater 1 through the susceptor 6,
This is an apparatus for producing a CVD film on the wafer surface.
【０００６】上記の枚葉式ＣＶＤ装置に使用される従来
のウェーハ加熱用ヒータ１としては、図５，６に示すよ
うに抵抗加熱型渦巻状ヒータであり、その両端部に電力
を印加する電極端子２が接続されている。ウェーハ７の
温度は電極端子２間に印加する電力を変化させることに
より制御される構成になっている。As a conventional wafer heating heater 1 used in the above-mentioned single-wafer CVD apparatus, a resistance heating type spiral heater is shown in FIGS. 5 and 6, and electrodes for applying electric power to both ends thereof. Terminal 2 is connected. The temperature of the wafer 7 is controlled by changing the electric power applied between the electrode terminals 2.
【０００７】ＣＶＤ処理において、反応生成物の蒸着に
よって生成されるＣＶＤ膜は、ウェーハ表面の温度によ
って異なってくる。従って均一な膜厚にするためには、
ヒータ１による温度制御によってウェーハ温度を制御し
なければならない。In the CVD process, the CVD film produced by vapor deposition of reaction products varies depending on the temperature of the wafer surface. Therefore, in order to obtain a uniform film thickness,
The wafer temperature must be controlled by the temperature control by the heater 1.
【０００８】[0008]
【発明が解決しようとする課題】しかし上記従来ヒータ
にあっては、ヒータ１に印加する電力を導入するＭo ，
Ｓus等の電極端子２が電極部分からの放熱によりそれ以
外のヒータ部分よりも著しく温度が低下してしまうた
め、それに伴いウェーハ温度に低温部が生じ、ウェーハ
表面に均一な膜厚のＣＶＤ膜が得られないという課題が
ある。However, in the above-mentioned conventional heater, Mo, which introduces the electric power applied to the heater 1,
The temperature of the electrode terminal 2 such as Sus is remarkably lower than that of the other heater portion due to the heat radiation from the electrode portion, so that a low temperature portion is generated in the wafer temperature and a CVD film having a uniform film thickness is formed on the wafer surface. There is a problem that you cannot get it.
【０００９】なお、ウェーハ７の直径よりもサセプタ６
の直径が大きく、これに対応してヒータ１の直径も定め
られているため、ヒータ１の中心部の電極端子２部分と
外側部の電極端子２部分のうち、主に中心部の電極端子
２部分の温度低下が問題になる。The diameter of the wafer 7 is larger than the diameter of the susceptor 6.
Since the diameter of the heater 1 is large and the diameter of the heater 1 is also determined correspondingly, the electrode terminal 2 in the central portion and the electrode terminal 2 in the outer portion of the heater 1 are mainly in the central portion. The temperature drop in the part becomes a problem.
【００１０】[0010]
【課題を解決するための手段】本発明ヒータは上記の課
題を解決するため、図１に示すようにＣＶＤ装置におい
て、電力が印加される抵抗加熱型ヒータ１の端部に、該
ヒータ１の端部分１Ａの温度低下を補償する補助ヒータ
３を設けてなる。In order to solve the above-mentioned problems, the heater of the present invention is provided with a heater of the heater 1 at the end of the resistance heating type heater 1 to which electric power is applied in the CVD apparatus as shown in FIG. An auxiliary heater 3 is provided to compensate for the temperature drop of the end portion 1A.
【００１１】[0011]
【作用】このような構成とすることによりヒータ１の端
部分１Ａの温度低下を補助ヒータ３により補償すること
ができ、ウェーハ表面に均一な膜厚のＣＶＤ膜を得るこ
とができることになる。With this structure, the auxiliary heater 3 can compensate for the temperature drop of the end portion 1A of the heater 1, and a CVD film having a uniform thickness can be obtained on the wafer surface.
【００１２】[0012]
【実施例】図１（Ａ）は本発明ヒータの第１実施例を示
す平面図、図１（Ｂ）はその正面図である。この第１実
施例は、図４の枚葉式ＣＶＤ装置において、電力が印加
される抵抗加熱型渦巻状ヒータ１の中心側端部を下方に
折曲げて、この部分をヒータ１の端部分１Ａの温度低下
を補償する補助ヒータ３とした構成とする。1 (A) is a plan view showing a first embodiment of the heater of the present invention, and FIG. 1 (B) is a front view thereof. In the first embodiment, in the single-wafer CVD apparatus shown in FIG. 4, an end portion of the resistance heating spiral heater 1 to which electric power is applied is bent downward and the end portion 1A of the heater 1 is bent. The auxiliary heater 3 is used to compensate for the temperature drop of the above.
【００１３】第１実施例において渦巻状ヒータ１の電極
端子２間に電力を印加すると、ヒータ１の中心側の電極
端子２部分の温度低下を補助ヒータ３により補償するこ
とができることになる。When power is applied between the electrode terminals 2 of the spiral heater 1 in the first embodiment, the auxiliary heater 3 can compensate for the temperature drop of the electrode terminal 2 portion on the center side of the heater 1.
【００１４】図２は第２実施例を示す正面図である。こ
の第２実施例は抵抗加熱型渦巻状ヒータ１の中心側端部
に、２つの補助ヒータ３を連ねてなる。この第２実施例
においても図１の第１実施例と同様の作用効果を奏する
ことになる。FIG. 2 is a front view showing the second embodiment. In the second embodiment, two auxiliary heaters 3 are connected to the end portion of the resistance heating spiral heater 1 on the center side. Also in this second embodiment, the same operational effects as those of the first embodiment of FIG. 1 are obtained.
【００１５】図３は第３実施例を示す正面図である。こ
の第３実施例は抵抗加熱型渦巻状ヒータ１の中心側電極
端子２に補助ヒータ３を接続し、この補助ヒータ３に電
極端子２Ａを接続してなる。この第３実施例についても
上記第１，第２実施例と同様の作用効果を奏することに
なる。FIG. 3 is a front view showing a third embodiment. In the third embodiment, an auxiliary heater 3 is connected to a center side electrode terminal 2 of a resistance heating type spiral heater 1, and an electrode terminal 2A is connected to the auxiliary heater 3. Also in this third embodiment, the same operational effects as those of the first and second embodiments are obtained.
【００１６】なお、ウェーハ７はその表面の温度が最高
１５００℃位まで加熱され、膜生成時のウェーハ温度は
１０００℃程度である。又、ヒータ１に電力を印加する
電極端子２は一般にネジ等でヒータ１の端部に緩まない
ように接続し、端子部分の発熱を少なくしている。The temperature of the surface of the wafer 7 is heated up to about 1500 ° C., and the wafer temperature during film formation is about 1000 ° C. Further, the electrode terminal 2 for applying electric power to the heater 1 is generally connected to the end portion of the heater 1 with a screw or the like so as not to loosen, so that heat generation at the terminal portion is reduced.
【００１７】[0017]
【発明の効果】上述のように本発明によれば、ＣＶＤ装
置において、電力が印加される抵抗加熱型ヒータ１の端
部に、該ヒータ１の端部分１Ａの温度低下を補償する補
助ヒータ３を設けてなるので、ヒータ１の端部分１Ａの
温度低下を補助ヒータ３により補償することができ、ウ
ェーハ７の温度を均一にできるため、ウェーハ表面に均
一な膜厚のＣＶＤ膜を得ることができる。As described above, according to the present invention, in the CVD apparatus, the auxiliary heater 3 for compensating the temperature decrease of the end portion 1A of the heater 1 is provided at the end portion of the resistance heating type heater 1 to which electric power is applied. Since the temperature of the end portion 1A of the heater 1 can be compensated by the auxiliary heater 3 and the temperature of the wafer 7 can be made uniform, a CVD film having a uniform film thickness can be obtained on the wafer surface. it can.
【図１】（Ａ）は本発明ヒータの第１実施例を示す平面
図、（Ｂ）はその正面図である。FIG. 1A is a plan view showing a first embodiment of a heater of the present invention, and FIG. 1B is a front view thereof.
【図２】第２実施例を示す正面図である。FIG. 2 is a front view showing a second embodiment.
【図３】第３実施例を示す正面図である。FIG. 3 is a front view showing a third embodiment.
【図４】本発明の対象となる枚葉式ＣＶＤ装置の１例を
示す構成説明図である。FIG. 4 is a structural explanatory view showing an example of a single-wafer CVD apparatus to which the present invention is applied.
【図５】図４におけるヒータの１例を示す平面図であ
る。5 is a plan view showing an example of a heater in FIG. 4. FIG.
【図６】その正面図である。FIG. 6 is a front view thereof.
１ 抵抗加熱型（渦巻状）ヒータ １Ａ 端部分 ２ 電極端子 ２Ａ 電極端子 ３ 補助ヒータ ４ 反応室 ５ ウェーハ置台 ６ サセプタ ７ ウェーハ ８ ノズル 1 Resistance Heating Type (Swirl) Heater 1A End Part 2 Electrode Terminal 2A Electrode Terminal 3 Auxiliary Heater 4 Reaction Chamber 5 Wafer Stand 6 Susceptor 7 Wafer 8 Nozzle
Claims (4)
ェーハ置台上にサセプタを設け、このサセプタ上にウェ
ーハを載置し、ウェーハ置台の下方に抵抗加熱型ヒータ
を設け、このヒータによりサセプタを介してウェーハを
低圧反応ガス雰囲気中で加熱し、ウェーハ表面にＣＶＤ
膜を生成するＣＶＤ装置において、電力が印加される抵
抗加熱型ヒータ（１）の端部に、該ヒータ（１）の端部
分（１Ａ）の温度低下を補償する補助ヒータ（３）を設
けてなるウェーハ加熱用ヒータ。1. A wafer pedestal is provided in a reaction chamber, a susceptor is provided on the wafer pedestal, a wafer is placed on the susceptor, and a resistance heating type heater is provided below the wafer pedestal. The wafer is heated in a low-pressure reaction gas atmosphere and CVD is applied to the wafer surface.
In a CVD apparatus for producing a film, an auxiliary heater (3) is provided at the end of a resistance heating type heater (1) to which electric power is applied, for compensating for a temperature drop at the end (1A) of the heater (1). Wafer heating heater.
折曲げて、この部分を補助ヒータ（３）とすることを特
徴とする請求項１のウェーハ加熱用ヒータ。2. The heater for heating a wafer according to claim 1, wherein an end portion of the resistance heating type heater (1) is bent downward and this portion is used as an auxiliary heater (3).
の補助ヒータ（３）を連ねてなる請求項１のウェーハ加
熱用ヒータ。3. The heater for heating a wafer according to claim 1, wherein a plurality of auxiliary heaters (3) are connected to an end of the resistance heating type heater (1).
（２）に、補助ヒータ（３）を接続してなる請求項１の
ウェーハ加熱用ヒータ。4. The heater for heating a wafer according to claim 1, wherein an auxiliary heater (3) is connected to the electrode terminal (2) of the resistance heating type heater (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27696991A JP3275330B2 (en) | 1991-09-26 | 1991-09-26 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27696991A JP3275330B2 (en) | 1991-09-26 | 1991-09-26 | Semiconductor manufacturing equipment |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001296059A Division JP2002203797A (en) | 2001-09-27 | 2001-09-27 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0590177A true JPH0590177A (en) | 1993-04-09 |
| JP3275330B2 JP3275330B2 (en) | 2002-04-15 |
Family
ID=17576938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27696991A Expired - Fee Related JP3275330B2 (en) | 1991-09-26 | 1991-09-26 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3275330B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811246A (en) * | 2012-11-14 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating device and plasma machining equipment |
-
1991
- 1991-09-26 JP JP27696991A patent/JP3275330B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811246A (en) * | 2012-11-14 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating device and plasma machining equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3275330B2 (en) | 2002-04-15 |
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