JPH0592952U - Rotating disk for wafer - Google Patents

Abstract

(57) [Summary] [Purpose] When implanting ions into a wafer, it is an object to prevent the ion implantation angle from changing even if the rotating disk holding the wafer rotates. [Structure] A holding portion is provided obliquely around a rotating disc. A plurality of wafers are mounted on and held by the holder along the circumferential direction of the holder. The holding surface of this wafer is arcuate along the circumferential direction of the holding surface.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a rotating disk used for holding a wafer when implanting ions into the wafer.

[0002]

[Prior Art]

 In general, this type of rotary disc is mainly composed of a circular flat plate-shaped disc main body 1 and a holding portion 2 provided at the peripheral edge of the disc main body 1, as shown in FIGS. A plurality of wafers 3 are mounted on the holding portion 2 along its circumferential direction and held. The holding portion 2 is provided so as to be inclined with respect to the disc body 1 by, for example, about 7 degrees (see FIG. 2), and a certain implantation is performed with respect to an ion beam traveling vertically to the disc body 1. The angle is maintained.

The implantation direction of the ion beam is fixed, and the disk body 1 rotates about a rotation shaft 4. By this rotation, ions are sequentially injected into each wafer 3. Since the holding part 2 is inclined as described above, the cross-section in the circumferential direction of the holding part 2 (cross-section taken along the line XX in FIG. 1) has an arc surface as shown in each of FIG. Becomes

By the way, conventionally, the holding surface of the wafer 3 in the holding portion 2 is usually flattened. That is, for example, as shown in FIG. 5, when the holding table 5 is provided on the surface of the holding portion 2 and the wafer 3 is held on the holding surface 6 of the surface, the holding surface 6 is a flat surface.

The reason why the holding surface 6 is made flat in this way is to hold the wafer 3 in close contact with the holding surface 6, and in this way, the wafer 3 and the holding surface 6 There is no space between them, and the heat generated in the wafer 3 is quickly dissipated from the holder 5 to the holder 2, which is convenient.

However, according to such a configuration, when the disk rotates, the ion implantation angle varies on the side of the wafer. For example, as shown in FIG. 5, even if the wafer 3 is in a vertical position with respect to the ion beam B, the ion beam B is injected to the side of the wafer 3 as the disk rotates, as shown in FIG. In such a state, the side portion will not be perpendicular to the ion beam B. Therefore, the ion implantation angle is different. This becomes more remarkable as the wafer 3 has a larger diameter.

[0007]

[Problems to be solved by the device]

 According to the present invention, when a plurality of wafers are mounted and held on a holding part on the periphery of a rotating disk and an ion beam is injected into the holding part, the rotation of the disk also changes the implantation angle of the ion beam to the wafer. The purpose is not to.

[0008]

[Means for Solving the Problems]

 The present invention is characterized in that when a plurality of wafers are mounted and held on the holding portion at the periphery of the rotating disk, the holding surface of the wafer is an arc surface along the circumferential direction of the holding surface. And

[0009]

[Action]

 When the wafer is attached to the holding surface, there is a gap between the wafer and the holding surface. However, when the disk rotates, centrifugal force acts on it, and the wafer is pressed against the holding surface and adheres thereto. As a result, the surface of the wafer becomes an arc along the holding surface. With such an arc shape, even if the disk rotates, the implantation angle of the ion beam with respect to the wafer becomes constant regardless of the rotational position.

Further, since the wafer and the holding surface are in close contact with each other, there is no space between them. Due to this, the heat generated in the wafer is quickly radiated from the holding surface to the holding portion.

[0011]

【Example】

 An embodiment of this invention will be described with reference to FIGS. In addition, the same reference numerals as those in FIG. 5 indicate the same or corresponding parts. According to the present invention, the holding surface of the wafer 3 in the holding portion 2 is an arc surface. Specifically, the surface of the holding table 5, that is, the holding surface 6 is an arc surface. It is assumed that the wafer 3 is held by the holding claw 7 by the fixed claw 7 and the movable claw 9 by the spring 8.

When the wafer 3 is attached to the holding surface 6 of the holding table 5 of the holding portion 2, there is a space between the wafer 3 and the holding surface 6 as shown in FIG. However, since the disk rotates, for example, 6000 times per minute, this rotation causes centrifugal force P to act as shown in FIG.

Of the component force of the centrifugal force P, the component force Q perpendicular to the holding surface 6 causes the wafer 3 to be pressed against the holding surface 6 to be in close contact therewith. As a result, the surface of the wafer 3 becomes arcuate along the holding surface 6 as shown in FIG. With such an arc shape, even if the disk rotates, the implantation angle of the ion beam B on the surface of the wafer 3 does not change and is always constant.

Since the wafer 3 and the holding surface 6 are in close contact with each other in this way, even if the wafer 3 generates heat due to the implantation of the ion beam, the heat is quickly transferred from the holding surface 6 to the holding portion 2. .. Therefore, the heat radiation effect of the wafer 3 is not different from that of the conventional structure.

On the other hand, among the component force of the centrifugal force P, the component force R parallel to the holding surface 6 causes the wafer 3 to be pushed out from the holding portion 2 to the outer periphery, but this extrusion is performed by the fixed claw 7. Will be blocked. However, as described above, since the center of the wafer 3 is recessed in an arc shape along the holding surface 6, the pushing force by the component force R does not significantly act. In this respect, in the conventional configuration, since the wafer is flat, this pushing force has a large effect, which causes a large number of buckling phenomena.However, according to the present invention, the buckling phenomenon can be reduced. become able to.

[0016]

[Effect of the device]

 As described above in detail, according to the present invention, when a plurality of wafers are mounted on the holding portion at the peripheral edge of the disk to implant ions, the rotation of the disk does not change the ion implantation angle. It is possible to reduce the occurrence of buckling of the wafer.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of the present invention.

FIG. 2 is a partial detailed cross-sectional view of FIG.

FIG. 3 is an enlarged sectional view taken along line XX of FIG.

FIG. 4 is an enlarged cross-sectional view taken along line XX of FIG. 1 during operation.

5 is an enlarged cross-sectional view taken along line XX of FIG. 1 in a conventional example.

6 is a cross-sectional view for explaining the operation in FIG.

[Explanation of symbols]

 1 disk body 2 holding part 3 wafer 6 holding surface B ion beam

Claims (1)

[Scope of utility model registration request] 1. A tilted holding portion is provided on the periphery of a rotating disk, and a plurality of wafers into which an ion beam is injected are mounted and held along the circumferential direction of the holding portion. A rotary disk for wafers, wherein the holding surface of the wafer of the holding section is an arcuate surface along the circumferential direction of the holding surface.