JPH0593049U - Pressure contact type semiconductor device - Google Patents
Pressure contact type semiconductor deviceInfo
- Publication number
- JPH0593049U JPH0593049U JP3404292U JP3404292U JPH0593049U JP H0593049 U JPH0593049 U JP H0593049U JP 3404292 U JP3404292 U JP 3404292U JP 3404292 U JP3404292 U JP 3404292U JP H0593049 U JPH0593049 U JP H0593049U
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- type semiconductor
- contact type
- semiconductor device
- pressure contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000006073 displacement reaction Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Thyristors (AREA)
Abstract
(57)【要約】
【目的】 制御電極部を圧接するための圧接部材の形状
を種々の形状に工夫し、これらを組み合わせることによ
り圧接部材の変位による不都合を無くする。
【構成】 半導体基体（ウエハ）３の一方の主表面に主
電極２を設けるとともに、他方の主表面には主電極５と
制御電極６を設けた半導体素子であって、制御電極６を
圧接するための圧接部材の各種の構成部品の形状を工夫
し、組み合わせて、圧接部材を保護する。
(57) [Abstract] [Purpose] The shape of the press-contact member for press-contacting the control electrode portion is devised into various shapes, and by combining these, the inconvenience due to displacement of the press-contact member is eliminated. A semiconductor element in which a main electrode 2 is provided on one main surface of a semiconductor substrate (wafer) 3 and a main electrode 5 and a control electrode 6 are provided on the other main surface, and the control electrode 6 is pressed against the semiconductor element. The shapes of various components of the pressure contact member are devised and combined to protect the pressure contact member.
Description
【０００１】[0001]
本考案は圧接型半導体素子に係り、特に圧接型半導体素子における制御電極の 圧接構造に関するものである。 The present invention relates to a pressure contact type semiconductor device, and more particularly to a pressure contact structure of a control electrode in the pressure contact type semiconductor device.
【０００２】[0002]
図１３に従来の圧接型半導体素子として圧接型ゲートターンオフサイリスタの 構造を示す。図でろう付けや溶接などにより接着されずに接触している部分は、 説明のために切り離して図示してある。 FIG. 13 shows a structure of a pressure contact type gate turn-off thyristor as a conventional pressure contact type semiconductor element. In the figure, the portions that are in contact with each other without being adhered by brazing or welding are separated and illustrated for the sake of explanation.
【０００３】 図１３において、１は一方の主電極導体である銅ブロック、２はシリコンと熱 膨張係数がほぼ等しいモリブデン，タングステン等からなり、シリコンウエハ３ の一方の主表面にろう付けされたアノード電極、４は高耐圧を持たせるために半 導体基体の端面を保護する目的で設けられるシリコンゴム等からなる絶縁物、５ はアルミニウム層又はスパッタ層からなり、シリコンウエハ３の他方の主表面の 外周部に形成された制御電極であるゲート電極、６はアルミニウム層又はスパッ タ層からなり、シリコンウエハ３のゲート電極５が形成された主表面に、ゲート 電極５に取り囲まれて形成された他方の主電極であるカソード電極、７はシリコ ンと熱膨張係数がほぼ等しい材料からなる円板状の熱緩衝板である。In FIG. 13, 1 is a copper block which is one of the main electrode conductors, and 2 is an anode brazed to one main surface of a silicon wafer 3 made of molybdenum, tungsten or the like having a coefficient of thermal expansion almost equal to that of silicon. Electrodes 4 are insulators made of silicon rubber or the like provided for the purpose of protecting the end surface of the semiconductor substrate in order to have a high withstand voltage. Reference numeral 5 is an aluminum layer or a sputter layer and is formed on the other main surface of the silicon wafer 3. The gate electrode 6 which is a control electrode formed on the outer peripheral portion, 6 is made of an aluminum layer or a sputter layer, and the other is formed on the main surface of the silicon wafer 3 on which the gate electrode 5 is formed so as to be surrounded by the gate electrode 5. The cathode electrode, which is the main electrode of the above, and 7 is a disk-shaped heat buffer plate made of a material having a thermal expansion coefficient substantially equal to that of silicon.
【０００４】 また、図１３において、８は熱緩衝板７に加圧接触される他方の主電極導体で あるカソード銅ポスト、９は円筒状の絶縁筒、１０はアルミニウム等の材質から なり、ゲート電極５に圧接される円筒状のゲートリング、１１は金属等の材質か らなる平板状の座金、１２は皿ばね、１３は金属等の材質からなる円環状の座金 、１４はマイカまたはテフロン等の材質からなる円環平板状の絶縁物、１５はゲ ートリング１０に溶接またはろう付けされ、コバール等の材質からなるシール部 １９を通して外部へ接続されるゲートリード線、１６はセラミック等の材質から なる絶縁筒、１７は鉄・ニッケル合金等の材質からなり、カソード銅ポスト８と ドーナツ状金属板１８に溶接またはろう付けされているドーナツ状金属板、２０ は鉄・ニッケル合金等の材質からなり、絶縁筒１６に溶接またはろう付けされて いて、素子組立時にドーナツ状金属板２１に溶接されるドーナツ状金属板であっ て、金属板２１は鉄・ニッケル合金等の材質からなり、アノード銅ポスト１と溶 接またはろう付けされていて、素子組立時にドーナツ状金属板２０に溶接される 。Further, in FIG. 13, 8 is a cathode copper post which is the other main electrode conductor which is brought into pressure contact with the thermal buffer plate 7, 9 is a cylindrical insulating tube, 10 is a material such as aluminum, and the gate is A cylindrical gate ring pressed against the electrode 5, 11 is a flat plate washer made of a metal or the like, 12 is a disc spring, 13 is an annular washer made of a metal or the like, and 14 is a mica or Teflon or the like. An annular flat plate-shaped insulator made of the above material, 15 is welded or brazed to the gate ring 10 and is connected to the outside through a seal portion 19 made of a material such as Kovar, and 16 is made of a material such as ceramic. The insulating cylinder 17 is made of a material such as iron / nickel alloy, and the doughnut-shaped metal plate is welded or brazed to the cathode copper post 8 and the donut-shaped metal plate 18. A donut-shaped metal plate that is made of a material such as iron / nickel alloy and is welded or brazed to the insulating cylinder 16 and is welded to the donut-shaped metal plate 21 when assembling the element. The metal plate 21 is an iron / nickel alloy. It is made of such a material as above and is welded or brazed to the anode copper post 1 and is welded to the doughnut-shaped metal plate 20 when the element is assembled.
【０００５】[0005]
図１３の圧接型ゲートターンオフサイリスタでは、半導体基体であるシリコン ウエハ３に熱緩衝板２をろう付けしてアノード電極を形成し、アルミニウム蒸着 またはスパッタによりカソード電極６およびゲート電極５を形成し、エッジ部の 露出面をパッシベーションゴム４で保護したペレットをカソード電極，アノード 電極およびゲート電極を圧接できるようにした密閉ケースに封入してある。 In the pressure contact type gate turn-off thyristor of FIG. 13, a thermal buffer plate 2 is brazed to a silicon wafer 3 which is a semiconductor substrate to form an anode electrode, and a cathode electrode 6 and a gate electrode 5 are formed by aluminum vapor deposition or sputtering to form an edge. A pellet whose exposed surface is protected by passivation rubber 4 is enclosed in a sealed case that allows the cathode electrode, anode electrode, and gate electrode to be pressed together.
【０００６】 図でゲートリング１０は皿ばね１２のばね圧力によりゲート電極５に圧接され る。また、皿ばねの圧力が均一にゲートリングに作用するように皿ばねは少なく とも２枚の金属座金１１，１３により挟まれている。また、ゲートリングとカソ ードポスト８Ａとの絶縁のために、絶縁リング１４および絶縁筒９が設けられて いる。In the figure, the gate ring 10 is pressed against the gate electrode 5 by the spring pressure of the disc spring 12. Further, the disc spring is sandwiched by at least two metal washers 11 and 13 so that the pressure of the disc spring uniformly acts on the gate ring. Further, an insulating ring 14 and an insulating cylinder 9 are provided to insulate the gate ring from the cathode post 8A.
【０００７】 ゲート電極はカソード電極を取り囲むように外周部に形成されている。これは 小容量のゲートターンオフサイリスタでよく用いられているゲート電極を素子の 中心部に形成するいわゆるセンターゲートに比べて、より均一で大きなゲート電 流引き出し能力があり、大容量のゲートターンオフサイリスタに適用した場合に 可制御電流向上が期待できるゲート構造である。The gate electrode is formed on the outer peripheral portion so as to surround the cathode electrode. Compared to a so-called center gate, which has a gate electrode that is often used in a small-capacity gate turn-off thyristor at the center of the device, it has a more uniform and large gate current drawing capability, and a large-capacity gate turn-off thyristor. This is a gate structure that can be expected to improve controllable current when applied.
【０００８】 しかるに、実際の素子では、図１３のように組み立てた後、信頼性試験等の種 々の特性評価を行う。この各特性評価ごとに素子には圧接と解放がくり返される 。そして解放の際に皿ばねの復元力等で図１４のように絶縁筒９が位置ずれをお こし、これにより座金１３や皿ばね１２が偏心をおこし、結果的に次に圧接した ときに著しい圧接不良を引きおこしてしまう。However, in an actual device, after assembly as shown in FIG. 13, various characteristic evaluations such as a reliability test are performed. The element is repeatedly pressed and released for each characterization. When released, the insulating cylinder 9 is displaced due to the restoring force of the disc spring as shown in FIG. 14, which causes the washer 13 and the disc spring 12 to become eccentric. It will cause poor pressure contact.
【０００９】 本考案は上記従来の問題点に鑑みてなされたもので、その目的は、制御電極部 を圧接するための圧接部材の形状を種々の形状に工夫し、これらを組み合わせる ことにより圧接部材の変位による不都合を無くすることである。The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to devise various shapes of the pressure-contacting member for pressure-contacting the control electrode portion and combine them to form a pressure-contacting member. Is to eliminate the inconvenience caused by the displacement.
【００１０】[0010]
本考案は、上記目的を達成するために、半導体基体の一方の主表面に第１の主 電極を設け、他方の主表面には第２の主電極と制御電極を設けてなり、前記第１ の主電極と第２の主電極を第１の金属ポストと第２の金属ポストを介して前記半 導体基体に圧接させるとともに、前記制御電極を、前記第２の金属ポストとは電 気的に絶縁した状態で、圧接部材を介して前記半導体基体に圧接させてなる半導 体素子において、 前記圧接部材に該圧接部材を保護するための圧接保護手段を設けて構成したこ とを特徴とする。 In order to achieve the above object, the present invention comprises a first main electrode provided on one main surface of a semiconductor substrate, and a second main electrode and a control electrode provided on the other main surface. The main electrode and the second main electrode are pressed against the semiconductor substrate through the first metal post and the second metal post, and the control electrode is electrically connected to the second metal post. A semiconductor element which is pressed against the semiconductor substrate via a pressure contact member in an insulated state, wherein the pressure contact member is provided with pressure contact protection means for protecting the pressure contact member. ..
【００１１】[0011]
半導体基体の両主表面に配設された主電極部は金属ポストによって圧接され、 半導体基体の一方の主表面に配設された制御電極部は圧接部材を介して金属ポス トの圧接作用に伴って圧接される。制御電極部の圧接にあたって、圧接保護手段 によって圧接部材の変位を復帰させる。 The main electrode portions arranged on both main surfaces of the semiconductor substrate are pressed against each other by the metal posts, and the control electrode portion arranged on one main surface of the semiconductor substrate is pressed by the metal post through the pressing member. Are pressed together. Upon press contact of the control electrode portion, the displacement of the press contact member is restored by the press contact protection means.
【００１２】[0012]
以下に本考案の種々の好ましい実施例を図１〜図１２を参照しながら説明する 。 Various preferred embodiments of the present invention will be described below with reference to FIGS.
【００１３】 図１は本考案の第１実施例による圧接型半導体素子を示すもので、図１３のも のと同一又は相当部分には同一符号が付されている。FIG. 1 shows a pressure contact type semiconductor device according to a first embodiment of the present invention. The same or corresponding parts as those of FIG. 13 are designated by the same reference numerals.
【００１４】 半導体基体であるウエハ３の主表面にそれぞれ主電極を有し、一方の主電極で あるカソード電極６は制御電極であるゲート電極５に取り囲まれ主表面上に分散 配置されている。このカソード電極６と他方のアノード電極２はシリコンと熱膨 張係数がほぼ等しい材料であるモリブデンもしくはタングステン等の熱緩衝板を 介して圧接により外部電極へ接続されている。A main electrode of a wafer 3 which is a semiconductor substrate has a main electrode, and a cathode electrode 6 which is one main electrode is surrounded by a gate electrode 5 which is a control electrode and is dispersedly arranged on the main surface. The cathode electrode 6 and the other anode electrode 2 are connected to the external electrode by pressure welding via a thermal buffer plate such as molybdenum or tungsten, which is a material having a thermal expansion coefficient substantially equal to that of silicon.
【００１５】 本実施例の特徴とするところは、図１と図２に示すように、カソード銅ポスト ８に嵌挿された絶縁筒として、円筒部９ａと鍔部９ｂからなる絶縁筒９を用いた ことである。The feature of this embodiment is that, as shown in FIGS. 1 and 2, an insulating cylinder 9 including a cylindrical portion 9a and a collar portion 9b is used as an insulating cylinder fitted in a cathode copper post 8. That is what happened.
【００１６】 カソード銅ポスト８は円柱部８ａと鍔部８ｂからなり、カソード銅ポスト８の 円柱部８ａには絶縁筒９が嵌挿され、絶縁筒９の円筒部９ａの外周にはゲートリ ング１０，座金１１，皿ばね１２および座金１３が嵌挿されている。従って、ア ノード銅ポスト１とカソード銅ポスト８間で圧接すると、カソード電極６はカソ ード銅ポスト８の円柱部８ａによって圧接され、ゲート電極５はカソード銅ポス ト８の鍔部８ｂ，座金１３，皿ばね１２，座金１１およびゲートリング１０によ って圧接される。The cathode copper post 8 is composed of a column portion 8 a and a collar portion 8 b. An insulating cylinder 9 is fitted into the column portion 8 a of the cathode copper post 8 and the gate ring 10 is provided on the outer periphery of the cylindrical portion 9 a of the insulating cylinder 9. , The washer 11, the disc spring 12, and the washer 13 are inserted. Therefore, when the anode copper post 1 and the cathode copper post 8 are pressure-welded, the cathode electrode 6 is pressure-welded by the cylindrical portion 8a of the cathode copper post 8, and the gate electrode 5 is the collar portion 8b of the cathode copper post 8 and the washer. 13, the disc spring 12, the washer 11 and the gate ring 10 are pressed against each other.
【００１７】 図１と図２に示す実施例によれば、絶縁筒９を断面がＬ字型の鍔つき円筒体と し、Ｌ字の直角内に金属座金１３および１１，皿ばね１２，ゲートリング１０を 設けるようにした。この構造では圧接・解放のサイクルで絶縁筒９の位置ずれは 起こらず、仮に起きたとしても他の部品の偏心を引き起こすことはなく、次の圧 接によって復元し位置ずれは解消される。また、この構造では、絶縁リング１４ を省略することができる。According to the embodiment shown in FIGS. 1 and 2, the insulating cylinder 9 is a cylindrical body with a collar having an L-shaped cross section, and the metal washers 13 and 11, the disc spring 12, and the gate are arranged within a right angle of the L-shape. The ring 10 is provided. In this structure, the insulating cylinder 9 is not displaced in the press-contact / release cycle, and even if it does occur, it does not cause eccentricity of other parts, and it is restored by the next press-contact to eliminate the displacement. Further, in this structure, the insulating ring 14 can be omitted.
【００１８】 図３は本考案の第２実施例による圧接型半導体素子を示すものであって、この 第２実施例においては、絶縁筒９を鍔部９ｂを有する円筒体とし、絶縁筒９の筒 部９ａの外周にゲートリング１０を嵌挿し、鍔部９ｂをゲートリング１０の端部 と座金１１間に位置させたものである。FIG. 3 shows a pressure contact type semiconductor device according to a second embodiment of the present invention. In this second embodiment, the insulating cylinder 9 is a cylindrical body having a collar portion 9b, and the insulating cylinder 9 has a cylindrical shape. The gate ring 10 is fitted on the outer periphery of the cylindrical portion 9a, and the collar portion 9b is positioned between the end of the gate ring 10 and the washer 11.
【００１９】 従って、図３に示す第２実施例によれば、絶縁筒９を断面Ｌ字型の鍔つき円筒 体とし、Ｌ字の直角内にゲートリング１０のみを設けるようにしたものである。 この例では絶縁筒９が皿ばね１２の収縮に伴い可動となるが、皿ばね１２や金属 座金１３および１１は最初から絶縁筒９の上に設けられているため、これらの部 品の偏心は発生しない。この構造でも絶縁リング１４は省略できる。また、第２ 実施例における他の応用例として、図４に示すように、座金１１とゲートリング １０間に絶縁リング１４を介設し、この絶縁リング１４と鍔なしの絶縁筒９によ って断面Ｌ字型を構成して代用することもできる。Therefore, according to the second embodiment shown in FIG. 3, the insulating cylinder 9 is a cylindrical body with a collar having an L-shaped cross section, and only the gate ring 10 is provided within a right angle of the L-shape. .. In this example, the insulating cylinder 9 becomes movable as the disc spring 12 contracts, but since the disc spring 12 and the metal washers 13 and 11 are provided on the insulating cylinder 9 from the beginning, the eccentricity of these parts is Does not occur. Also in this structure, the insulating ring 14 can be omitted. Further, as another application example of the second embodiment, as shown in FIG. 4, an insulating ring 14 is interposed between a washer 11 and a gate ring 10, and the insulating ring 14 and a collar-less insulating cylinder 9 are used. Alternatively, an L-shaped cross section may be configured and used instead.
【００２０】 図５は本考案の第３実施例を示すものであって、この第３実施例では筒部１３ ａと鍔部１３ｂを有する金属座金１３を用い、この座金１３の筒部１３ａを絶縁 筒９と皿ばね１２，座金１１およびゲートリング間に配置し、鍔部１３ｂを絶縁 リング１４と皿ばね１２間に位置させたものである。従って、この例では金属座 金１３を断面がＬ字型の鍔つき円筒体とし、Ｌ字の直角内に皿ばね１２，金属座 金１１，ゲートリング１０を設けるようにしたもので、第１実施例と同じ理由で 前記問題点が解決できる。FIG. 5 shows a third embodiment of the present invention. In this third embodiment, a metal washer 13 having a cylinder portion 13a and a flange portion 13b is used, and the cylinder portion 13a of this washer 13 is It is arranged between the insulating cylinder 9 and the disc spring 12, the washer 11 and the gate ring, and the collar portion 13b is located between the insulating ring 14 and the disc spring 12. Therefore, in this example, the metal washer 13 is a cylindrical body with a collar having an L-shaped cross section, and the disc spring 12, the metal washer 11, and the gate ring 10 are provided within a right angle of the L-shape. The above problems can be solved for the same reason as in the embodiment.
【００２１】 図６は本考案の第４実施例を示すものであって、筒部１３ａと鍔部１３ｂから なる金属座金１３ｃを用い、この座金１３ｃの鍔部１３ｂを絶縁リング１４と皿 ばね１２間に配置し、筒部１３ａを絶縁筒９と皿ばね１２間に位置させたもので ある。FIG. 6 shows a fourth embodiment of the present invention, in which a metal washer 13c consisting of a cylinder portion 13a and a collar portion 13b is used, and the collar portion 13b of this washer 13c is provided with an insulating ring 14 and a disc spring 12. It is arranged between the insulating cylinder 9 and the disc spring 12 with the cylinder portion 13a interposed therebetween.
【００２２】 この例では金属座金１３ｃを断面がＬ字型の鍔つき円筒体とし、Ｌ字の直角内 に片方の皿ばねの端部のみが位置するようにしたものである。この構造では絶縁 筒９の位置ずれは起こり得るが、偏心した場合致命的となる皿ばねの偏心は防止 できる。In this example, the metal washer 13c is a flanged cylinder having an L-shaped cross section, and only one end of the disc spring is positioned within the right angle of the L-shape. With this structure, displacement of the insulating cylinder 9 may occur, but it is possible to prevent the eccentricity of the disc spring, which is fatal when eccentric.
【００２３】 また、図７は本考案の第５実施例を示すものであって、本実施例では厚内筒部 １３ｃと鍔部１３ｄによって金属座金１３を形成し、筒部１３ｃを絶縁筒９と当 接させ、かつ鍔部１３ｄをカソード銅ポスト８の鍔部８ｂと皿ばね１２間に位置 させるとともに、座金１１とゲートリング１０間に絶縁リング１４を配設したも のである。従って、同じく金属座金１３を断面がＬ字型の鍔つき円筒体とし、こ れを鍔なしの絶縁筒と接着し、これらからなるＬ字の直角内に皿ばね１２，金属 座金１１，絶縁リング１４，ゲートリング１０を設けるようにしたもので第１実 施例と同じ理由で前記問題点が解決できる。絶縁リング１４はカソード銅ポスト ８と金属座金１３との間に設けても良い。FIG. 7 shows a fifth embodiment of the present invention. In this embodiment, a metal washer 13 is formed by a thick inner cylinder portion 13c and a flange portion 13d, and the cylinder portion 13c is insulated by an insulating cylinder 9c. In addition, the collar portion 13d is positioned between the collar portion 8b of the cathode copper post 8 and the disc spring 12, and the insulating ring 14 is disposed between the washer 11 and the gate ring 10. Therefore, similarly, the metal washer 13 is a cylindrical body with a flange having an L-shaped cross section, which is adhered to an insulating cylinder without a collar, and the disc spring 12, the metal washer 11, and the insulating ring are formed within the L-shaped right angle formed of these. 14, the gate ring 10 is provided, and the above problems can be solved for the same reason as in the first embodiment. The insulating ring 14 may be provided between the cathode copper post 8 and the metal washer 13.
【００２４】 さらに、図８は本考案の第６実施例を示し、この実施例ではカソード銅ポスト ８の鍔部８ｂの下面部に円環状の係合溝８ｃを設け、この係合溝８ｃ内に絶縁筒 ９の端部を介在させたものである。この例では絶縁筒９が位置ずれを起こしても 、位置ずれの距離が溝の深さ以内であれば他の部品の偏心は起こらない。Further, FIG. 8 shows a sixth embodiment of the present invention. In this embodiment, an annular engaging groove 8c is provided on the lower surface of the collar portion 8b of the cathode copper post 8 and the inside of the engaging groove 8c is provided. The end of the insulating tube 9 is interposed between the two. In this example, even if the insulating cylinder 9 is displaced, the eccentricity of other components does not occur if the distance of displacement is within the depth of the groove.
【００２５】 図９は本考案の第７実施例による圧接型半導体素子を示すものであって、この 実施例では図８のものに改良を加えたものであって、カソード銅ポスト８の鍔部 ８ｂの下面部に設けられた係合溝８ｃに絶縁筒９の端部を介在させるとともに、 この係合溝８ｃに介在する絶縁筒９の端部に突起９ｄを設けたものである。また 突起９ｄは座金１３と係合するようにしたもので、絶縁筒９の位置ずれを防止す る。FIG. 9 shows a pressure contact type semiconductor device according to a seventh embodiment of the present invention, which is an improvement of the pressure contact type semiconductor device shown in FIG. The end of the insulating cylinder 9 is interposed in the engaging groove 8c provided on the lower surface of 8b, and the projection 9d is provided at the end of the insulating cylinder 9 interposed in the engaging groove 8c. Further, the projection 9d is adapted to engage with the washer 13, and prevents the insulating cylinder 9 from being displaced.
【００２６】 また、図１０は本考案の第８実施例を示すもので、この実施例でも図８のもの に改良を加えたもので、カソード銅ポスト８の係合溝８ｃに介在する絶縁筒９の 端部に突起を設ける代わりに、絶縁筒９の端部外周面に係合溝９ｅを設け、この 係合溝９ｅ内に座金１３の内周端部が介在するようにして絶縁筒９の位置ずれを 防いだものである。また、この第８実施例の他の応用例として、図１１に示すよ うに、カソード銅ポスト８に係合溝を設けることなく、絶縁リング１４（金属リ ングでも可）で高さ調節して金属座金１３が係合溝９ｅ内に介在するようにする こともできる。FIG. 10 shows an eighth embodiment of the present invention. In this embodiment, an improvement is made to that of FIG. 8, and an insulating cylinder interposed in the engaging groove 8c of the cathode copper post 8 is provided. Instead of providing a projection on the end of the insulating cylinder 9, an engaging groove 9e is provided on the outer peripheral surface of the end of the insulating cylinder 9, and the inner peripheral end of the washer 13 is interposed in the engaging groove 9e. It prevents the misalignment of. Further, as another application example of the eighth embodiment, as shown in FIG. 11, the height is adjusted by an insulating ring 14 (a metal ring is also possible) without providing an engaging groove in the cathode copper post 8. The metal washer 13 may be interposed in the engagement groove 9e.
【００２７】 さらに、図１２は本考案の第９実施例による圧接型半導体素子を示すものであ って、絶縁筒９の内周面部にリング状の係合溝９ｆを設けるとともに、カソード 銅ポスト８の円柱部８ａの外周面にリング状の突起８ｄを設け、この突起８ｄを 係合溝９ｆ内に介在させたものである。Further, FIG. 12 shows a pressure contact type semiconductor device according to a ninth embodiment of the present invention, in which a ring-shaped engagement groove 9f is provided on the inner peripheral surface of the insulating cylinder 9 and a cathode copper post is provided. A ring-shaped protrusion 8d is provided on the outer peripheral surface of the cylindrical portion 8a of No. 8, and the protrusion 8d is interposed in the engagement groove 9f.
【００２８】 すなわち、絶縁筒９の内周側に係合溝を設け、他方カソード銅ポストに突起を 設け、これらを組み合わせることで絶縁筒９の位置ずれを防いだものである。ま た、これと逆に絶縁筒の内周側に突起をカソード銅ポストに係合溝を設けて組み 合わせることもできる。That is, the engagement groove is provided on the inner peripheral side of the insulating cylinder 9, and the projection is provided on the cathode copper post on the other hand, and the displacement of the insulating cylinder 9 is prevented by combining these. Further, conversely, projections may be provided on the inner peripheral side of the insulating cylinder so as to provide the cathode copper posts with engaging grooves and combined.
【００２９】 上記各実施例において絶縁筒は突起を有するものを除いて板状の絶縁物を素子 組立時に円筒状に丸めて使用することもできる。また、素子の中心付近に圧接さ れるゲート電極が形成される。いわゆるセンターゲート構造で、ゲートリードを 皿ばねのばね圧力で圧接するものにも実施できるとともに、素子の中心と外周の 中間に圧接されるゲート電極が形成される、いわゆる中間ゲート構造で、ゲート リングを皿ばねのばね圧力で圧接するものにも実施できる。さらに、上記各実施 例は、カソードおよびアノードの両主電極がシリコンと熱膨張係数がほぼ等しい 材料であるモリブデンもしくはタングステン等のシリコンにろう付けされていな い熱緩衝板を介して圧接により外部電極へ接続される、いわゆるアロイフリー構 造のゲートターンオフサイリスタにも実施できるとともに、ゲートターンオフサ イリスタと同様に圧接により外部電極に接続される半導体素子であるダイオード ，サイリスタ，静電誘導サイリスタ，ＩＧＢＴおよび絶縁ゲート付きサイリスタ にも実施できる。In each of the above-described embodiments, except for the insulating cylinder having the protrusion, a plate-shaped insulating material may be used by rolling it into a cylindrical shape when assembling the element. In addition, a gate electrode is formed in pressure contact with the vicinity of the center of the device. It can be applied to a so-called center gate structure in which the gate lead is pressed by the spring pressure of a disc spring, and a gate electrode is formed that is pressed in the middle between the center and the outer periphery of the element, which is a so-called intermediate gate structure. It can also be implemented in a case where the spring is pressed by the disc spring. Further, in each of the above-mentioned embodiments, the main electrodes of the cathode and the anode are pressed onto the external electrodes by pressure welding through a thermal buffer plate which is not brazed to silicon such as molybdenum or tungsten, which is a material having a thermal expansion coefficient substantially equal to that of silicon. It can be applied to a gate turn-off thyristor with a so-called alloy-free structure, which is connected to an external electrode. Similarly to the gate turn-off thyristor, it is a semiconductor device connected to the external electrode by pressure contact, such as a diode, a thyristor, an electrostatic induction thyristor, an IGBT and an IGBT. It can be applied to thyristors with insulated gates.
【００３０】[0030]
本考案は、以上の如くであって、半導体基体の両主表面に配設された主電極部 は金属ポストによって圧接され、半導体基体の一方の主表面に配設された制御電 極部は圧接部材を介して金属ポストの圧接作用に伴って圧接される。制御電極部 の圧接にあたって、圧接保護手段によって圧接部材の変位を復帰させるものであ るから、圧接と開放を繰り返しても、素子内部で圧接部材の各構成部品が偏心す ることによって起こる圧接不良を防止できて、高信頼性の圧接型半導体素子を得 ることが出来る。 The present invention is as described above, in which the main electrode portions arranged on both main surfaces of the semiconductor substrate are pressed by metal posts, and the control electrode portions arranged on one main surface of the semiconductor substrate are pressed. The metal posts are pressed against each other by the pressure contact action of the metal posts. When the control electrode is pressed, the displacement of the pressure contact member is restored by the pressure contact protection means.Therefore, even if pressure contact and opening are repeated, the pressure contact failure occurs due to the eccentricity of each component of the pressure contact member inside the element. Can be prevented, and a highly reliable pressure contact type semiconductor element can be obtained.
【図１】本考案の第１実施例による圧接型半導体素子の
正断面図。FIG. 1 is a front sectional view of a pressure contact type semiconductor device according to a first embodiment of the present invention.
【図２】図１の圧接型半導体素子の要部拡大断面図。FIG. 2 is an enlarged cross-sectional view of a main part of the pressure contact type semiconductor device of FIG.
【図３】本考案の第２実施例による圧接型半導体素子の
要部を示す断面図。FIG. 3 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a second embodiment of the present invention.
【図４】本考案の第２実施例による圧接型半導体素子の
変形例を示す断面図。FIG. 4 is a cross-sectional view showing a modified example of the pressure contact type semiconductor device according to the second embodiment of the present invention.
【図５】本考案の第３実施例による圧接型半導体素子の
要部を示す断面図。FIG. 5 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a third embodiment of the present invention.
【図６】本考案の第４実施例による圧接型半導体素子の
要部を示す断面図。FIG. 6 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a fourth embodiment of the present invention.
【図７】本考案の第５実施例による圧接型半導体素子の
要部を示す断面図。FIG. 7 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a fifth embodiment of the present invention.
【図８】本考案の第６実施例による圧接型半導体素子の
要部を示す断面図。FIG. 8 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a sixth embodiment of the present invention.
【図９】本考案の第７実施例による圧接型半導体素子の
要部を示す断面図。FIG. 9 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a seventh embodiment of the present invention.
【図１０】本考案の第８実施例による圧接型半導体素子
の要部を示す断面図。FIG. 10 is a sectional view showing an essential part of a pressure contact type semiconductor device according to an eighth embodiment of the present invention.
【図１１】図１０の圧接型半導体素子の変形例の要部を
示す断面図。11 is a cross-sectional view showing the main parts of a modified example of the pressure contact type semiconductor element of FIG.
【図１２】本考案の第９実施例による圧接型半導体素子
の要部を示す断面図。FIG. 12 is a sectional view showing an essential part of a pressure contact type semiconductor device according to a ninth embodiment of the present invention.
【図１３】従来の圧接型半導体素子の正断面図。FIG. 13 is a front sectional view of a conventional pressure contact type semiconductor device.
【図１４】図１３の圧接型半導体素子の動作状態を示す
正断面図。14 is a front sectional view showing an operating state of the pressure contact type semiconductor device of FIG.
１…アノード銅ポスト ２…アノード電極 ３…ウエハ ４…パッシベーションゴム ５…ゲート電極 ６…カソード電極 ７…熱緩衝板 ８…カソード銅ポスト ８ａ…円柱部 ８ｂ…鍔部 ８ｃ…係合溝 ８ｄ…突起 ９…絶縁筒 ９ａ…円筒部 ９ｂ…鍔部 ９ｃ…係合溝 ９ｄ…突起 ９ｅ，９ｆ…係合溝 １０…ゲートリング １１…座金 １２…皿ばね １３…座金 １３ａ…筒部 １３ｂ…鍔部 １３ｃ…厚肉筒部 １３ｄ…鍔部 １４…絶縁リング １５…リード線 DESCRIPTION OF SYMBOLS 1 ... Anode copper post 2 ... Anode electrode 3 ... Wafer 4 ... Passivation rubber 5 ... Gate electrode 6 ... Cathode electrode 7 ... Thermal buffer plate 8 ... Cathode copper post 8a ... Column part 8b ... Collar part 8c ... Engagement groove 8d ... Projection 9 ... Insulating cylinder 9a ... Cylindrical part 9b ... Collar part 9c ... Engagement groove 9d ... Protrusions 9e, 9f ... Engagement groove 10 ... Gate ring 11 ... Washer 12 ... Disc spring 13 ... Washer 13a ... Cylindrical part 13b ... Collar part 13c ... Thick-walled cylinder part 13d ... Flange part 14 ... Insulation ring 15 ... Lead wire
Claims (10)
極を設け、他方の主表面には第２の主電極と制御電極を
設けてなり、前記第１の主電極と第２の主電極を第１の
金属ポストと第２の金属ポストを介して前記半導体基体
に圧接させるとともに、前記制御電極を、前記第２の金
属ポストとは電気的に絶縁した状態で、圧接部材を介し
て前記半導体基体に圧接させてなる半導体素子におい
て、 前記圧接部材に該圧接部材を保護するための圧接保護手
段を設けて構成したことを特徴とする圧接型半導体素
子。1. A first main electrode is provided on one main surface of a semiconductor substrate, and a second main electrode and a control electrode are provided on the other main surface, and the first main electrode and the second main electrode are provided. The main electrode is pressed against the semiconductor substrate via the first metal post and the second metal post, and the control electrode is electrically insulated from the second metal post via the pressure contact member. A pressure-contact type semiconductor element, wherein the pressure-contact member is provided with pressure-contact protection means for protecting the pressure-contact member.
前記圧接部材を、少なくとも、前記第２の金属ポスト
（８）の外周部位にそれぞれ嵌挿された絶縁筒（９），
制御電極用金属リング（１０），ばね部材（１２）およ
びばね部材用座金（１３，１１）によって構成するとと
もに、前記圧接保護手段として前記絶縁筒９に該絶縁筒
の変位を復帰させるための係合部を設けて構成したこと
を特徴とする圧接型半導体素子。2. The pressure contact type semiconductor device according to claim 1, wherein
An insulating cylinder (9) in which the press contact member is fitted and inserted into at least an outer peripheral portion of the second metal post (8),
A metal ring (10) for the control electrode, a spring member (12), and washers (13, 11) for the spring member, and a member for returning the displacement of the insulating cylinder to the insulating cylinder 9 as the pressure contact protection means. A pressure contact type semiconductor device characterized in that the pressure contact type semiconductor device is configured by providing a joint portion.
前記係合部を、前記絶縁筒（９）の筒部（９ａ）の端部
に連設された鍔部（９ｂ）によって構成し、該鍔部（９
ｂ）を前記圧接部材に係合させて構成したことを特徴と
する圧接型半導体素子。3. The pressure contact type semiconductor device according to claim 2,
The engaging portion is constituted by a collar portion (9b) continuously provided at an end of the tubular portion (9a) of the insulating tubular member (9), and the collar portion (9) is formed.
A pressure-contact type semiconductor device, characterized in that b) is engaged with the pressure-contact member.
前記係合部を、第２の金属ポスト（８）の鍔部（８ｂ）
に係合溝（８ｃ）を設け、この係合溝（８ｃ）に絶縁筒
（９）の端部を係合させて構成したことを特徴とする圧
接型半導体素子。4. The pressure contact type semiconductor device according to claim 2,
The engaging portion is the collar portion (8b) of the second metal post (8).
A pressure-contact type semiconductor device, characterized in that an engaging groove (8c) is provided in the engaging groove (8c), and the end of the insulating tube (9) is engaged with the engaging groove (8c).
前記係合部を、さらに前記絶縁筒（９）の端部外周に突
起（９ｄ）を設け、該突起（９ｄ）を前記圧接部材に係
合させて構成したことを特徴とする圧接型半導体素子。5. The pressure contact type semiconductor device according to claim 4,
A pressure-contact type semiconductor element, characterized in that the engaging portion is further provided with a protrusion (9d) on the outer periphery of the end of the insulating cylinder (9) and the protrusion (9d) is engaged with the pressure-contact member. .
さらに前記絶縁筒（９）の端部外周面に係合溝（９ｅ）
を設け、この係合溝（９ｅ）に前記圧接部材を係合させ
て前記係合部を構成したことを特徴とする圧接型半導体
素子。6. The pressure contact type semiconductor device according to claim 4,
Further, an engaging groove (9e) is formed on the outer peripheral surface of the end of the insulating cylinder (9).
And a pressure contact member is engaged with the engagement groove (9e) to form the engagement portion.
前記絶縁筒（９）の内周面に係合溝（９ｆ）を設けると
ともに、前記金属ポスト（８）の円柱部（８ａ）の外周
面に係合突起（８ｄ）を設け、該係合突起（８ｄ）を前
記係合溝（９ｆ）内に介在させて前記係合部を構成した
ことを特徴とする圧接型半導体素子。7. The pressure contact type semiconductor device according to claim 4,
An engagement groove (9f) is provided on the inner peripheral surface of the insulating cylinder (9), and an engagement protrusion (8d) is provided on the outer peripheral surface of the cylindrical portion (8a) of the metal post (8). The pressure-contact type semiconductor element, wherein the engaging portion is formed by interposing (8d) in the engaging groove (9f).
前記圧接部材を、少なくとも、前記第２の金属ポスト
（８）の外周部位にそれぞれ嵌挿された絶縁筒９，制御
電極用金属リング（１０），ばね部材（１２）およびば
ね部材用座金（１３，１１）によって構成するととも
に、前記圧接保護手段として前記座金（１３）に前記ば
ね部材（１２）の変位を復帰させるための係合部を設け
て構成したことを特徴とする圧接型半導体素子。8. The pressure contact type semiconductor device according to claim 1,
An insulating cylinder 9, a control electrode metal ring (10), a spring member (12), and a spring member washer (13) in which the pressure contact member is fitted and inserted into at least the outer peripheral portion of the second metal post (8), respectively. , 11), and the washer (13) is provided with an engaging portion for returning the displacement of the spring member (12) as the pressure contact protection means.
前記座金（１１，１３）の少なくとも一方に少なくとも
ばね部材（１２）の内側に位置する係合筒部（１３ａ）
を形成して前記係合部を構成したことを特徴とする圧接
型半導体素子。9. The pressure contact type semiconductor device according to claim 8, wherein
At least one of the washers (11, 13) has an engagement cylinder portion (13a) located at least inside the spring member (12).
A pressure-contact type semiconductor element, wherein the engaging portion is formed by forming a.
て、前記係合筒部（１３ａ）を絶縁筒（９）に連結した
ことを特徴とする圧接型半導体素子。10. The pressure-contact type semiconductor element according to claim 9, wherein the engagement tube portion (13a) is connected to an insulating tube (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3404292U JPH0593049U (en) | 1992-05-22 | 1992-05-22 | Pressure contact type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3404292U JPH0593049U (en) | 1992-05-22 | 1992-05-22 | Pressure contact type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0593049U true JPH0593049U (en) | 1993-12-17 |
Family
ID=12403266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3404292U Pending JPH0593049U (en) | 1992-05-22 | 1992-05-22 | Pressure contact type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0593049U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148574A (en) * | 2019-05-21 | 2019-08-20 | 全球能源互联网研究院有限公司 | A chip crimping structure and semiconductor packaging structure |
| CN112563210A (en) * | 2020-12-11 | 2021-03-26 | 浙江华晶整流器有限公司 | Reverse conducting module |
-
1992
- 1992-05-22 JP JP3404292U patent/JPH0593049U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148574A (en) * | 2019-05-21 | 2019-08-20 | 全球能源互联网研究院有限公司 | A chip crimping structure and semiconductor packaging structure |
| CN112563210A (en) * | 2020-12-11 | 2021-03-26 | 浙江华晶整流器有限公司 | Reverse conducting module |
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