JPH0594939A - X-ray lead-out member and x-ray aligner - Google Patents

X-ray lead-out member and x-ray aligner

Info

Publication number
JPH0594939A
JPH0594939A JP3253264A JP25326491A JPH0594939A JP H0594939 A JPH0594939 A JP H0594939A JP 3253264 A JP3253264 A JP 3253264A JP 25326491 A JP25326491 A JP 25326491A JP H0594939 A JPH0594939 A JP H0594939A
Authority
JP
Japan
Prior art keywords
film
ray
rays
vacuum
vacuum window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3253264A
Other languages
Japanese (ja)
Inventor
Shinya Hasegawa
晋也 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3253264A priority Critical patent/JPH0594939A/en
Publication of JPH0594939A publication Critical patent/JPH0594939A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To lead out X-rays in gas without breaking a vacuum window film by heating. CONSTITUTION:X-rays 1 of a wavelength of 2 to 8nm from an electron storage ring are made to pass through a diamond film 2 of a thickness of 1um, whereby 2 to 4.5-nm wavelength X-rays and 6 to 8-nm wavelength X-rays, which are unnecessary for exposure and make a vacuum window film 3 heat, are made to attenuate to one 10000ths and are made to pass through the diamond vacuum window film 3 of a thickness of 2um. Accordingly, the film 3 is never heated with the X-rays 1.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、集積回路などの製造に
用いられるX線取り出し部材およびX線露光装置に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray extraction member and an X-ray exposure apparatus used for manufacturing integrated circuits and the like.

【0002】[0002]

【従来の技術】従来のパターン露光方法は、光学露光用
マスクを用いたマスク原図転写技術によっていた。しか
し、パターン寸法が露光に用いる光の波長程度またはそ
れ以下に微細化して来ると、こうした方法でパターンを
形成するのは原理的にも限界になった。
2. Description of the Related Art A conventional pattern exposure method is a mask original image transfer technique using an optical exposure mask. However, when the pattern size becomes finer to about the wavelength of the light used for exposure or smaller, it is theoretically limited to form a pattern by such a method.

【0003】近年では、従来の化学露光技術によるより
も微細なパターンを形成する技術として、光よりも波長
の短いX線を用いたX線露光技術が利用されるようにな
った。X線の内でもとりわけ、電子蓄積リング中に蓄積
された電子から放射されるシンクロトロン放射光は照射
強度が大きいこと、及び、照射光の平行性がよいことの
ために、単位時間当りの露光ウェハ枚数(スループッ
ト)が大きいこと、及び、より微細なパターンが形成で
きる点で優れているため、最も利用されている。
In recent years, an X-ray exposure technique using X-rays having a shorter wavelength than light has come to be used as a technique for forming a finer pattern than the conventional chemical exposure technique. Among the X-rays, the synchrotron radiation emitted from the electrons accumulated in the electron storage ring has a high irradiation intensity and the irradiation light has good parallelism, so that exposure per unit time is performed. It is most used because it has a large number of wafers (throughput) and can form finer patterns.

【0004】[0004]

【発明が解決しようとする課題】シンクロトロン放射光
は真空中で発せられ、露光が行われる気体中へ導かれマ
スクを通してウェハに照射される。このために、気体と
真空とを隔絶する真空窓膜が設けられる。シンクロトロ
ン放射光は連続した波長のX線を含む。露光に用いられ
る波長のX線は真空窓膜を透過するが、それ以外の波長
のX線は真空窓膜に吸収されて真空窓膜を加熱し、その
強度が損なわれて破損するという問題があった。また、
マスクを構成するマスクパターン支持膜も露光に用いら
れる波長のX線は透過するがそれ以外の波長のX線を吸
収し加熱されて、膨張しパターン位置が歪むという問題
があった。
Synchrotron radiation is emitted in a vacuum, is guided into a gas to be exposed, and is irradiated onto a wafer through a mask. To this end, a vacuum window membrane is provided which isolates the gas from the vacuum. Synchrotron radiation comprises X-rays of continuous wavelength. X-rays of the wavelength used for exposure pass through the vacuum window film, but X-rays of other wavelengths are absorbed by the vacuum window film and heat the vacuum window film, resulting in a problem that its strength is impaired and damaged. there were. Also,
The mask pattern supporting film constituting the mask also transmits X-rays of wavelengths used for exposure, but absorbs X-rays of wavelengths other than that and is heated and expanded, and the pattern position is distorted.

【0005】本発明の目的は、上記の課題を解決し、真
空窓膜あるいはマスクパターン支持膜の加熱を防止した
X線取り出し部材およびX線露光装置を提供することに
ある。
An object of the present invention is to solve the above problems and to provide an X-ray extraction member and an X-ray exposure apparatus which prevent the vacuum window film or the mask pattern supporting film from being heated.

【0006】[0006]

【課題を解決するための手段】本発明は、真空中にある
X線源から放射されるX線を、気体と真空とを隔絶する
真空窓膜を通して気体中に取り出すX線取り出し部材に
おいて、前記真空窓膜よりもX線源に近い真空中に前記
真空窓膜と同じあるいはそれに近いX線吸収特性を有す
る膜を設けることをと特徴とするX線取り出し部材であ
る。また、本発明は、シンクロトロン放射光を用いるX
線露光装置において、マスクパターン支持膜よりも光源
側にこの支持膜と同じかあるいはそれに近いX線吸収特
性を有する膜を設けることを特徴とするX線露光装置で
ある。
The present invention relates to an X-ray extraction member for extracting X-rays emitted from an X-ray source in a vacuum into a gas through a vacuum window film that separates the gas from the vacuum. An X-ray extraction member characterized in that a film having an X-ray absorption characteristic equal to or close to that of the vacuum window film is provided in a vacuum closer to the X-ray source than the vacuum window film. The present invention also relates to X using synchrotron radiation.
In the X-ray exposure apparatus, a film having an X-ray absorption characteristic that is the same as or close to the support film is provided on the light source side of the mask pattern support film.

【0007】[0007]

【作用】真空窓膜やマスクパターン支持膜と同じかある
いはそれに近いX線吸収特性をもつ膜を通過させること
により、露光に不要で真空窓膜やマスクパターン支持膜
を加熱する波長のX線が吸収されるので、X線が真空窓
膜やマスクパターン支持膜を加熱することがない。
By passing through a film having an X-ray absorption characteristic which is the same as or close to that of the vacuum window film or the mask pattern supporting film, X-rays having a wavelength for heating the vacuum window film or the mask pattern supporting film which is unnecessary for exposure are generated Since it is absorbed, X-rays do not heat the vacuum window film and the mask pattern supporting film.

【0008】[0008]

【実施例】次に本発明の実施例について図面を参照して
説明する。図1は本発明の第1の実施例の説明図であ
る。電子蓄積リングを電子エネルギー500MeV、電
子軌道半径1mで運転して得られるX線を斜入射角80
mradのSiCミラーで反射させることにより、波長
2nmから8nmのX線1が得られた。このX線1を厚
さ1μmのダイアモンド膜2を通過させ、波長2nmか
ら4.5nm及び波長6nmから8nmのX線を1万分
の1に減衰させた後、厚さ2μmのダイアモンドの真空
窓膜3を通過させることにより、真空窓膜3を破損させ
ることなく波長4.5nmから6nmのX線1’を気体
中に取り出すことができた。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is an explanatory diagram of the first embodiment of the present invention. X-rays obtained by operating the electron storage ring with an electron energy of 500 MeV and an electron orbit radius of 1 m are oblique incident angles of 80.
X-rays 1 having a wavelength of 2 nm to 8 nm were obtained by reflecting the light with a mrad SiC mirror. After passing this X-ray 1 through a diamond film 2 having a thickness of 1 μm and attenuating the X-rays having a wavelength of 2 nm to 4.5 nm and an wavelength of 6 nm to 8 nm to 1 / 10,000, a diamond vacuum window film having a thickness of 2 μm As a result, the X-ray 1 ′ having a wavelength of 4.5 nm to 6 nm could be taken out into the gas without damaging the vacuum window film 3 by passing the X-ray 3.

【0009】図2は第2の実施例を説明する図である。
図1と同様にして得たX線1を厚さ1μmのダイアモン
ド膜2を通過させ、波長2nmから4.5nm及び波長
6nmから8nmのX線を1万分の1に減衰させた後、
厚さ1μmのダイアモンドのマスクパターン支持膜3を
通過させることにより、マスクパターン支持膜4を膨張
させることなく波長4.5nmから6nmのX線により
露光を行うことができた。図1、2の実施例では真空窓
膜3と支持膜4と同じX線吸収特性を持つ膜2として
3、4と全く同じ構成材料(ダイアモンド)のものを用
いたが、同種の元素を構成元素として含む膜を用いても
よいことは自明である。
FIG. 2 is a diagram for explaining the second embodiment.
X-rays 1 obtained in the same manner as in FIG. 1 are passed through a diamond film 2 having a thickness of 1 μm, and X-rays having a wavelength of 2 nm to 4.5 nm and wavelengths of 6 nm to 8 nm are attenuated to 1 / 10,000.
By passing the mask pattern supporting film 3 of diamond having a thickness of 1 μm, it was possible to perform exposure with X-rays having a wavelength of 4.5 nm to 6 nm without expanding the mask pattern supporting film 4. In the examples of FIGS. 1 and 2, as the film 2 having the same X-ray absorption characteristics as the vacuum window film 3 and the support film 4, the same constituent material (diamond) as 3 and 4 was used. It is obvious that a film containing as an element may be used.

【0010】[0010]

【発明の効果】以上説明したように本発明によれば、真
空窓膜が加熱されて破損したり、マスクパターン支持膜
が加熱されて歪むことがなくなる。
As described above, according to the present invention, the vacuum window film will not be heated and damaged, and the mask pattern support film will not be heated and distorted.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の説明図である。FIG. 1 is an explanatory diagram of a first embodiment of the present invention.

【図2】本発明の第2の実施例の説明図である。FIG. 2 is an explanatory diagram of a second embodiment of the present invention.

【符号の説明】 1、1’X線 2 膜 3 真空窓膜 4 マスクパターン支持膜[Explanation of reference numerals] 1, 1'X-ray 2 film 3 vacuum window film 4 mask pattern support film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 真空中にあるX線源から放射されるX線
を、気体と真空とを隔絶する真空窓膜を通して気体中に
取り出すX線取り出し部材において、前記真空窓膜より
もX線源に近い真空中に前記真空窓膜と同じあるいはそ
れに近いX線吸収特性を有する膜を設けることを特徴と
するX線取り出し部材。
1. An X-ray extraction member for extracting X-rays emitted from an X-ray source in a vacuum into a gas through a vacuum window film that separates the gas from a vacuum, and the X-ray source more than the vacuum window film. An X-ray extraction member, characterized in that a film having X-ray absorption characteristics which is the same as or close to that of the vacuum window film is provided in a vacuum close to the above.
【請求項2】 シンクロトロン放射光を用いるX線露光
装置において、マスクパターン支持膜よりも光源側にマ
スクパターン支持膜と同じあるいはそれに近いX線吸収
特性を有する膜を設けることを特徴とするX線露光装
置。
2. An X-ray exposure apparatus using synchrotron radiation, wherein a film having an X-ray absorption characteristic which is the same as or close to that of the mask pattern supporting film is provided on the light source side of the mask pattern supporting film. Line exposure device.
JP3253264A 1991-10-01 1991-10-01 X-ray lead-out member and x-ray aligner Pending JPH0594939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3253264A JPH0594939A (en) 1991-10-01 1991-10-01 X-ray lead-out member and x-ray aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3253264A JPH0594939A (en) 1991-10-01 1991-10-01 X-ray lead-out member and x-ray aligner

Publications (1)

Publication Number Publication Date
JPH0594939A true JPH0594939A (en) 1993-04-16

Family

ID=17248863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3253264A Pending JPH0594939A (en) 1991-10-01 1991-10-01 X-ray lead-out member and x-ray aligner

Country Status (1)

Country Link
JP (1) JPH0594939A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107200A (en) * 1987-10-20 1989-04-25 Fujitsu Ltd Beam line of synchrotron radiation
JPH0574688A (en) * 1991-09-12 1993-03-26 Soltec:Kk Method and device for making x-ray exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107200A (en) * 1987-10-20 1989-04-25 Fujitsu Ltd Beam line of synchrotron radiation
JPH0574688A (en) * 1991-09-12 1993-03-26 Soltec:Kk Method and device for making x-ray exposure

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Effective date: 19980331