JPH0594973A - Judging method of etching end point - Google Patents
Judging method of etching end pointInfo
- Publication number
- JPH0594973A JPH0594973A JP28055691A JP28055691A JPH0594973A JP H0594973 A JPH0594973 A JP H0594973A JP 28055691 A JP28055691 A JP 28055691A JP 28055691 A JP28055691 A JP 28055691A JP H0594973 A JPH0594973 A JP H0594973A
- Authority
- JP
- Japan
- Prior art keywords
- end point
- etching
- value
- determined
- composite waveform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 18
- 239000002131 composite material Substances 0.000 claims abstract description 25
- 238000001228 spectrum Methods 0.000 claims abstract description 6
- 230000003595 spectral effect Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はプラズマ処理装置等を用
いたエッチングにおけるエッチングの終点を判定する方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of determining an etching end point in etching using a plasma processing apparatus or the like.
【０００２】[0002]
【従来の技術】半導体ウェハ等の試料表面に形成した金
属膜等を所定パターンに倣って除去するエッチングは半
導体集積回路を作成する上で不可欠の技術であり、この
エッチングの精度がチップの集積密度にそのまま影響す
る。2. Description of the Related Art Etching for removing a metal film or the like formed on the surface of a sample such as a semiconductor wafer according to a predetermined pattern is an essential technique for producing a semiconductor integrated circuit. Directly affects.
【０００３】斯かるエッチングは、反応チャンバー内に
表面にマスクをかけたウェハをセットし、この状態でチ
ャンバー内を減圧するとともにチャンバー内に反応ガス
を導入し、プラズマの存在下でウェハの表面のうちマス
クで覆われていない部分を所定厚さまで除去するのが一
般的手法である。In such etching, a wafer whose surface is masked is set in the reaction chamber, and in this state, the pressure inside the chamber is reduced and a reaction gas is introduced into the chamber to remove the wafer surface in the presence of plasma. It is a general method to remove a portion not covered with the mask to a predetermined thickness.
【０００４】そして、上記のエッチングにおいてはエッ
チングが終了した時点が分らないとエッチング不足やオ
ーバエッチングとなり不良率が高くなる。そこで、特開
昭５１−３５６３９号公報にあっては、エッチングの際
のみに発生するガスの発光強度変化を検知し、これをエ
ッチングの終点に結び付けるようにしている。In the above-mentioned etching, if the time when the etching is completed is not known, the etching rate becomes insufficient or over-etching, resulting in a high defective rate. Therefore, in Japanese Unexamined Patent Publication No. 51-35639, a change in emission intensity of gas generated only during etching is detected and linked to the end point of etching.
【０００５】[0005]
【発明が解決しようとする課題】最近の電子産業の発展
はチップの更なる実装密度の向上を要求し、このためエ
ッチングを含む微細加工は単に同一平面内での加工だけ
でなく、立体構造の構成に応用されている。例えば微小
面積のエッチングや多層膜のエッチング等が挙げられる
が、従来のように１種類のガスの発光強度変化のみを基
準にしていると、ノイズが大きく正確なエッチングの終
点を知ることができない。The recent development of the electronic industry requires a further increase in the packaging density of chips, so that microfabrication including etching is not limited to the machining within the same plane, but also the three-dimensional structure. It is applied to the composition. For example, etching of a minute area, etching of a multilayer film, and the like can be cited. However, if only the change in emission intensity of one type of gas is used as a reference as in the conventional case, noise is large and an accurate etching end point cannot be known.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決すべく本
発明は、エッチング反応に関与する複数のスペクトルの
合成波形を作成し、この合成波形から個々のエッチング
にマッチングした方法によりエッチングの終点を算出す
る。In order to solve the above problems, the present invention creates a composite waveform of a plurality of spectra involved in an etching reaction, and determines the etching end point from the composite waveform by a method matched to each etching. calculate.
【０００７】[0007]
【作用】チャンバー内の複数のスペクトル強度をセンサ
にて検出し、この検出した値を電圧値に変換し、この電
圧値の経時変化を合成波形として表わし、この合成波形
を微分する等して、終点を割りだす。Function: A plurality of spectral intensities in the chamber are detected by a sensor, the detected values are converted into a voltage value, a change over time of the voltage value is expressed as a synthetic waveform, and the synthetic waveform is differentiated. Figure out the end point.
【０００８】[0008]
【実施例】以下に本発明の実施例を添付図面に基づいて
説明する。ここで、図１は本発明に係るエッチング終点
判定方法を実施する装置の概略構成図であり、内部をプ
ラズマ雰囲気とし得る反応チャンバー１内に試料として
の半導体ウェハＷをセットし、また反応チャンバー１の
外部にはセンサ２ａ，２ｂを配置している。Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is a schematic configuration diagram of an apparatus for carrying out the etching end point determination method according to the present invention, in which a semiconductor wafer W as a sample is set in a reaction chamber 1 which can have a plasma atmosphere inside, and the reaction chamber 1 Sensors 2a and 2b are arranged outside of.
【０００９】センサ２ａ，２ｂはチャンバー１内のエッ
チング反応に関与する２種類のスペクトル強度を検出す
るためのものであり、センサ２ａにより例えばエッチン
グ反応の進行により増加するスペクトル強度を、センサ
２ｂによりエッチング反応の進行により減少するスペク
トル強度を検出する。The sensors 2a and 2b are for detecting two kinds of spectral intensities involved in the etching reaction in the chamber 1, and the sensor 2b etches the spectral intensities which increase with the progress of the etching reaction, for example. The spectral intensity that decreases as the reaction progresses is detected.
【００１０】そして、センサ２ａ，２ｂによって検出さ
れた値は電圧に変換され、アンプ３ａ，３ｂ及びＡ／Ｄ
コンバータ４ａ，４ｂを介して回路５に入り、この回路
５で合成計算されて合成波形となり、また合成波形は回
路６で１次微分され、更に回路７で２次微分され、エッ
チング対象物やエッチング条件などに応じ、以下に述べ
るような方法にて回路８で合成波形、１次微分波形或い
は２次微分波形に基づいてエッチング終点を判定する。Then, the values detected by the sensors 2a and 2b are converted into a voltage, which is then supplied to the amplifiers 3a and 3b and the A / D.
It enters into the circuit 5 through the converters 4a and 4b, and is synthesized and calculated by the circuit 5 to obtain a synthesized waveform. The synthesized waveform is first-order differentiated by the circuit 6 and then second-order differentiated by the circuit 7 to etch an etching object or etching. The etching end point is determined by the circuit 8 based on the synthesized waveform, the first-order differential waveform, or the second-order differential waveform according to the conditions and the like, as described below.
【００１１】ここで、前記合成波形を作る計算方法とし
ては、例えばエッチング反応の進行により増加するスペ
クトル強度をＡ、エッチング反応の進行により減少する
スペクトル強度をＢとした場合、（Ａ＋Ｂ）、（Ａ＋
Ｂ）2、｜Ａ−Ｂ｜または（Ａ−Ｂ）2のいずれかで表わ
す。どの式を選定するかは変化量を大きく捉えることが
できることなどを基準とする。尚、式中ＡかＢは０でも
よい。Here, as a calculation method for producing the above-mentioned composite waveform, for example, when the spectral intensity increasing with the progress of the etching reaction is A and the spectral intensity decreasing with the progress of the etching reaction is B, (A + B), (A +)
B) 2 , | AB | or (AB) 2 . Which formula to select is based on the fact that the amount of change can be captured. In the formula, A or B may be 0.
【００１２】次に具体的な終点判定方法の例を図２〜図
８を参照して説明する。先ず、図２は合成波形から直接
エッチング終点を判定する実施例を示し、この実施例に
あっては合成波形がピーク値（最大電圧値）を経過した
後、電圧値がピーク値よりも所定値下降した時点を終点
と判定する。Next, a specific example of the end point determination method will be described with reference to FIGS. First, FIG. 2 shows an embodiment in which the etching end point is directly determined from the composite waveform. In this embodiment, after the composite waveform has passed a peak value (maximum voltage value), the voltage value is a predetermined value rather than the peak value. The time point when it descends is determined as the end point.
【００１３】図３は合成波形を１次微分してエッチング
終点を判定する実施例を示し、このうち図３（ａ）は微
分値の変化が上昇した後下降する場合を、図３（ｂ）は
微分値の変化が下降した後上昇する場合を示し、図３
（ａ）の例にあっては上昇方向変化を５点連続して検出
した後に下降方向変化を２点連続して検出した時点を終
点と判定し、図３（ｂ）の例にあっては下降方向変化を
５点連続して検出した後に上昇方向変化を２点連続して
検出した時点を終点と判定する。FIG. 3 shows an embodiment for determining the etching end point by first-order differentiating the composite waveform. Of these, FIG. 3 (a) shows the case where the change in the differential value rises and then falls, as shown in FIG. 3 (b). Shows the case where the change of the differential value goes down and then goes up.
In the example of (a), it is determined that the time point when two consecutive changes in the descending direction are detected after five consecutive changes in the rising direction are detected as the end point, and in the example of FIG. 3 (b). The end point is determined when two consecutive changes in the descending direction are detected after five consecutive changes in the descending direction are detected.
【００１４】また図４は上記の実施例において、どの様
な場合を５点連続と看做すかについて説明した図であ
り、図４（ａ）に示すように頂点までの過去６回の測定
中でその間に５回上昇があった場合には一連の上昇変化
と看做し、 図４（ｂ）に示すように頂点までの過去６
回の測定中でその間に２回下降があった場合には一連の
上昇変化と看做さず、また図４（ｃ）に示すように連続
して同一レベルの結果がでた場合には一連の上昇変化と
看做すようにする。尚、何回連続して検出した場合に終
点とするかはエッチング対象物などに応じて決める。Further, FIG. 4 is a diagram for explaining what kind of case is considered as 5 consecutive points in the above-mentioned embodiment, and during the past 6 measurements up to the apex as shown in FIG. 4 (a). If there are five rises in the meantime, it is considered as a series of rise changes, and as shown in FIG.
If there are two drops during the measurement, it is not considered as a series of ascending changes, and if the results of the same level are continuously obtained as shown in FIG. Be considered as a rising change in It should be noted that the number of times of continuous detection that is taken as the end point is determined according to the etching target and the like.
【００１５】図５は合成波形を１次微分してエッチング
終点を判定する別実施例を示し、このうち図５（ａ）は
微分値の変化が上昇した後下降する場合を、図５（ｂ）
は微分値の変化が下降した後上昇する場合を示し、図５
（ａ）の例にあっては電圧値が上昇してきて基準値に達
した時点を終点と判定し、図５（ｂ）の例にあっては電
圧値が下降してきて基準値に達した時点を終点と判定す
る。FIG. 5 shows another embodiment in which the etching end point is determined by first-order differentiating the composite waveform. Of these, FIG. 5 (a) shows a case where the change of the differential value rises and then decreases. )
Shows the case where the change of the differential value goes down and then goes up.
In the example of (a), the time when the voltage value rises and reaches the reference value is determined to be the end point, and in the example of FIG. 5 (b), the time when the voltage value falls and reaches the reference value. Is determined as the end point.
【００１６】図６は合成波形を１次微分してエッチング
終点を判定する更なる別実施例を示し、このうち図６
（ａ）は微分値の変化が上昇した後下降する場合を、図
６（ｂ）は微分値の変化が下降した後上昇する場合を示
し、図６（ａ）の例にあっては電圧値が上昇してきて基
準値を超えた後再び変化方向を逆にして基準値に達した
時点を終点と判定し、図６（ｂ）の例にあっては電圧値
が下降してきて基準値を超えた後再び変化方向を逆にし
て基準値に達した時点を終点と判定する。FIG. 6 shows another embodiment for determining the etching end point by first-order differentiating the composite waveform, of which FIG.
6A shows a case where the change of the differential value rises and then falls, and FIG. 6B shows a case where the change of the differential value falls and then rises. In the example of FIG. 6A, the voltage value is changed. Rises and exceeds the reference value, then the direction of change is reversed again and the time point when the reference value is reached is determined to be the end point. In the example of FIG. 6B, the voltage value is decreasing and exceeds the reference value. After that, the direction of change is reversed again and the time when the reference value is reached is determined as the end point.
【００１７】図７は合成波形を１次微分してエッチング
終点を判定する更なる別実施例を示し、このうち図７
（ａ）は微分値の変化が上昇した後下降する場合を、図
７（ｂ）は微分値の変化が下降した後上昇する場合を示
し、図７（ａ）の例にあっては電圧値が上昇してきてピ
ーク値（最大値）となった後、所定値変化した時点を終
点と判定し、図７（ｂ）の例にあっては電圧値が下降し
てきてピーク値（最小値）となった後、所定値変化した
時点を終点と判定する。FIG. 7 shows another embodiment for determining the etching end point by first-order differentiating the composite waveform, of which FIG.
7A shows the case where the change in the differential value rises and then falls, and FIG. 7B shows the case where the change in the differential value falls and then rises. In the example of FIG. Is increased and reaches a peak value (maximum value), and then a time point when a predetermined value is changed is determined to be the end point. In the example of FIG. 7B, the voltage value is decreased and the peak value (minimum value) is determined. After that, the time point when a predetermined value changes is determined as the end point.
【００１８】図８は合成波形を２次微分してエッチング
終点を判定する実施例を示し、このうち図８（ａ）は微
分値の変化が上昇した後下降する場合を、図８（ｂ）は
微分値の変化が下降した後上昇する場合を示し、図８
（ａ）の例にあっては基準値から電圧値が下降してきて
０レベルになった時点を終点と判定し、図８（ｂ）の例
にあっては基準値から電圧値が上昇してきて０レベルに
なった時点を終点と判定する。FIG. 8 shows an embodiment in which the etching end point is determined by second-order differentiating the composite waveform. Of these, FIG. 8 (a) shows the case where the change in the differential value rises and then falls, as shown in FIG. 8 (b). Shows the case where the change of the differential value goes down and then goes up.
In the example of (a), it is determined that the time point when the voltage value falls from the reference value and becomes 0 level is the end point, and in the example of FIG. 8 (b), the voltage value rises from the reference value. The time point when the level becomes 0 is determined as the end point.
【００１９】[0019]
【発明の効果】以上に説明したように本発明によれば、
反応チャンバー内のエッチングに関与する複数のスペク
トル、例えばエッチング反応の進行により増加するスペ
クトルとエッチング反応の進行により減少するスペクト
ルの双方に基づいてエッチング終点を判定するようにし
たので、ノイズを少なくして変化量を大きく捉えること
ができ、エッチング終点の判定が正確に行える。As described above, according to the present invention,
Since the etching end point is determined based on a plurality of spectra related to etching in the reaction chamber, for example, a spectrum that increases as the etching reaction progresses and a spectrum that decreases as the etching reaction progresses, noise is reduced. A large amount of change can be captured, and the etching end point can be accurately determined.
【図１】本発明に係るエッチング終点判定方法を実施す
る装置の概略構成図FIG. 1 is a schematic configuration diagram of an apparatus for implementing an etching end point determination method according to the present invention.
【図２】合成波形から直接エッチング終点を判定する実
施例の説明に供するグラフFIG. 2 is a graph used for explaining an example in which an etching end point is directly determined from a synthetic waveform.
【図３】合成波形を１次微分してエッチング終点を判定
する実施例の説明に供するグラフFIG. 3 is a graph used for explaining an example of determining an etching end point by first-order differentiating a composite waveform.
【図４】図３のグラフの補足説明に供するグラフFIG. 4 is a graph used as a supplementary explanation of the graph of FIG.
【図５】合成波形を１次微分してエッチング終点を判定
する別実施例の説明に供するグラフFIG. 5 is a graph used for explaining another embodiment in which the etching end point is determined by first-order differentiating the composite waveform.
【図６】合成波形を１次微分してエッチング終点を判定
する別実施例の説明に供するグラフFIG. 6 is a graph used for explaining another embodiment in which the etching end point is determined by first-order differentiating the composite waveform.
【図７】合成波形を１次微分してエッチング終点を判定
する別実施例の説明に供するグラフFIG. 7 is a graph used for explaining another embodiment in which the etching end point is determined by first-order differentiating the composite waveform.
【図８】合成波形を２次微分してエッチング終点を判定
する別実施例の説明に供するグラフFIG. 8 is a graph used for explaining another embodiment in which the etching end point is determined by second-order differentiating the composite waveform.
１…反応チャンバー、２ａ，２ｂ…センサ、５…合成計
算回路、６…１次微分回路、７…２次微分回路、８…終
点判定回路。DESCRIPTION OF SYMBOLS 1 ... Reaction chamber, 2a, 2b ... Sensor, 5 ... Synthetic calculation circuit, 6 ... Primary differentiation circuit, 7 ... Secondary differentiation circuit, 8 ... End point determination circuit.
Claims (8)
スを導入して試料表面に形成した膜をエッチングするに
あたり、当該エッチングの終点を判定する方法におい
て、この方法はエッチング反応に関与する複数のスペク
トルの合成波形に基づいてエッチングの終点を判定する
ようにしたことを特徴とするエッチング終点判定方法。1. A method for determining an end point of etching when a film formed on a surface of a sample is etched by introducing a reaction gas into a chamber in which a sample is set, the method comprising a plurality of spectra involved in an etching reaction. An etching end point determination method, characterized in that the etching end point is determined based on the composite waveform of.
ペクトル強度をＡ（電圧値）、エッチング反応の進行に
より減少するスペクトル強度をＢ（電圧値）とした場
合、前記合成波形は（Ａ＋Ｂ）、（Ａ＋Ｂ）2、｜Ａ−
Ｂ｜または（Ａ−Ｂ）2のいずれかで表わすようにした
ことを特徴とする請求項１に記載のエッチング終点判定
方法。2. When the spectral intensity that increases with the progress of the etching reaction is A (voltage value) and the spectral intensity that decreases with the progress of the etching reaction is B (voltage value), the composite waveforms are (A + B) and (A + B). ) 2 , | A-
The etching end point determination method according to claim 1, wherein the method is represented by either B | or (AB) 2 .
から所定値以上下降した時点を終点とするようにしたこ
とを特徴とする請求項１に記載のエッチング終点判定方
法。3. The etching end point determination method according to claim 1, wherein the end point is determined when the end point is a time point at which the maximum voltage value of the composite waveform drops by a predetermined value or more.
を一定時間毎に計算し、上昇方向変化または下降方向変
化にある１次微分値が所定回数連続した後、前記とは逆
方向変化となって所定回数連続した時点を終点とするよ
うにしたことを特徴とする請求項１に記載のエッチング
終点判定方法。4. The determination of the end point is performed by calculating a first-order differential value of the composite waveform at regular time intervals, and after the first-order differential value in the upward direction change or the downward direction change continues for a predetermined number of times, the reverse direction to the above The etching end point determination method according to claim 1, wherein the end point is a time point when a change occurs and a predetermined number of times continues.
が基準値に達した時点を終点とするようにしたことを特
徴とする請求項１に記載のエッチング終点判定方法。5. The etching end point determination method according to claim 1, wherein the end point is determined when the first differential value of the combined waveform reaches a reference value.
が基準値を超えた後再び変化方向を逆にして基準値に達
した時点を終点とするようにしたことを特徴とする請求
項１に記載のエッチング終点判定方法。6. The determination of the end point is such that after the first-order differential value of the composite waveform exceeds the reference value, the changing direction is reversed again and the time point at which the reference value is reached is set as the end point. Item 2. The etching end point determination method according to Item 1.
が最大値または最小値から所定値変化した時点を終点と
するようにしたことを特徴とする請求項１に記載のエッ
チング終点判定方法。7. The etching end point determination according to claim 1, wherein the end point is determined when the first-order differential value of the composite waveform changes from a maximum value or a minimum value by a predetermined value. Method.
が基準値を超えた後、０レベルに達した時点を終点とす
るようにしたことを特徴とする請求項１に記載のエッチ
ング終点判定方法。8. The etching according to claim 1, wherein the determination of the end point is performed when the second derivative value of the composite waveform exceeds a reference value and then reaches a 0 level. End point determination method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28055691A JPH0594973A (en) | 1991-10-01 | 1991-10-01 | Judging method of etching end point |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28055691A JPH0594973A (en) | 1991-10-01 | 1991-10-01 | Judging method of etching end point |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0594973A true JPH0594973A (en) | 1993-04-16 |
Family
ID=17626691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28055691A Pending JPH0594973A (en) | 1991-10-01 | 1991-10-01 | Judging method of etching end point |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0594973A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11509685A (en) * | 1995-06-30 | 1999-08-24 | ラム リサーチ コーポレーション | Method and apparatus for detecting optimum end point in plasma etching |
-
1991
- 1991-10-01 JP JP28055691A patent/JPH0594973A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11509685A (en) * | 1995-06-30 | 1999-08-24 | ラム リサーチ コーポレーション | Method and apparatus for detecting optimum end point in plasma etching |
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