JPH059628Y2 - - Google Patents
Info
- Publication number
- JPH059628Y2 JPH059628Y2 JP15479187U JP15479187U JPH059628Y2 JP H059628 Y2 JPH059628 Y2 JP H059628Y2 JP 15479187 U JP15479187 U JP 15479187U JP 15479187 U JP15479187 U JP 15479187U JP H059628 Y2 JPH059628 Y2 JP H059628Y2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- measuring device
- substrate
- cover
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009529 body temperature measurement Methods 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 34
- 238000005259 measurement Methods 0.000 description 17
- 238000007740 vapor deposition Methods 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- 238000007733 ion plating Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Physical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
「産業上の利用分野」
本考案は、イオンプレーテイング装置等におい
て、高電圧がかけられた状態で蒸着物が付着され
る、被蒸着基材の温度を測定するのに好適に用い
られる温度測定装置に関する。[Detailed description of the invention] "Industrial application field" This invention is used to measure the temperature of a substrate to which a deposit is attached while a high voltage is applied in an ion plating device or the like. The present invention relates to a temperature measuring device suitably used for.
「従来の技術」
第2図に、従来から知られているイオンプレー
テイング装置の一例を示す。図中符号1は図示し
ない真空ポンプに接続された真空容器である。こ
の真空容器1の内部上方には、直流電源2aのマ
イナス側に接続された基板ホルダー2が配設さ
れ、この基板ホルダー2には、被蒸着物である基
板3が取り付けられている。また、前記真空容器
1内の床面1aには蒸発物質4を貯留するルツボ
5が配設され、このルツボ5の近傍には、蒸発物
質4を加熱、蒸発させる電子銃が設けられてい
る。この電子銃から発せられた電子ビーム7は、
図示しない磁場によつて移動方向に曲げられて、
蒸発物質4に照射されるようになつている。"Prior Art" FIG. 2 shows an example of a conventionally known ion plating apparatus. Reference numeral 1 in the figure is a vacuum container connected to a vacuum pump (not shown). A substrate holder 2 connected to the negative side of a DC power source 2a is disposed inside and above the vacuum container 1, and a substrate 3, which is an object to be deposited, is attached to the substrate holder 2. Further, a crucible 5 for storing the evaporative substance 4 is disposed on the floor surface 1a of the vacuum vessel 1, and an electron gun for heating and evaporating the evaporative substance 4 is provided near the crucible 5. The electron beam 7 emitted from this electron gun is
It is bent in the direction of movement by a magnetic field (not shown),
The evaporated substance 4 is irradiated.
前記真空容器1内の基板ホルダー2とルツボ5
の間には、直流電源8aのプラス側に接続された
イオン化電極8が配設されている。このイオン化
電極8と前記ルツボ5の間には、蒸発物質4の蒸
発によつてグロー放電域9が形成される。このグ
ロー放電域9は、蒸発物質4の蒸発の際に発生し
た熱電子等がイオン化電極8に移動することで形
成されるようになつている。すなわち、蒸発物質
4から発生した熱電子等によつてグロー放電域9
が形成され、このグロー放電域9によつて該蒸発
物質4がイオン化されるようになつている。そし
て、イオン化された該蒸発物質4は、負の電圧が
加えられた基板3に向かつて高速で衝突するよう
になつている。 Substrate holder 2 and crucible 5 in the vacuum container 1
An ionization electrode 8 connected to the positive side of a DC power supply 8a is arranged between them. A glow discharge region 9 is formed between the ionization electrode 8 and the crucible 5 by evaporation of the evaporation substance 4. This glow discharge region 9 is formed when thermoelectrons and the like generated during evaporation of the evaporative substance 4 move to the ionization electrode 8 . That is, the glow discharge area 9 is caused by thermionic electrons generated from the evaporated substance 4.
is formed, and the evaporated substance 4 is ionized by this glow discharge region 9. The ionized evaporated substance 4 then collides with the substrate 3 to which a negative voltage is applied at high speed.
一方、真空容器1の側部には、窒素等の反応ガ
スが供給されるガス導入管10が設けられてい
る。このガス導入管10によつて真空容器1内に
供給された反応ガスは、グロー放電域9でイオン
化されて陽イオンとなり、そして、前記蒸発物質
4から生じた陽イオンと反応して、該基板3の表
面に蒸着されるようになつている。なお、11は
シヤツターを示す。 On the other hand, a gas introduction pipe 10 is provided on the side of the vacuum container 1 to which a reaction gas such as nitrogen is supplied. The reaction gas supplied into the vacuum container 1 through the gas introduction tube 10 is ionized in the glow discharge region 9 to become positive ions, and reacts with the positive ions generated from the evaporative substance 4 to cause the substrate to be exposed to the substrate. It is designed to be deposited on the surface of 3. Note that 11 indicates a shutter.
「考案が解決しようとする問題点」
ところで、被蒸着物である基板3の温度は、そ
の表面に形成される蒸着層に影響し、所望する蒸
着層を得るためには、基板3の温度を高精度で制
御する必要がある。"Problems to be solved by the invention" By the way, the temperature of the substrate 3, which is the object to be evaporated, affects the evaporation layer formed on its surface, and in order to obtain the desired evaporation layer, the temperature of the substrate 3 must be adjusted. It is necessary to control with high precision.
基板3の温度を高精度で制御するには、正確に
温度測定することが前提となる。従来、基板3の
温度測定は、同基板3に操業時において高電圧
(数百ボルトの電圧)がかかり危険であるという
理由から、例えば赤外線放射温度計のような非接
触式の温度計12が用いられているのが通例であ
つた。 In order to control the temperature of the substrate 3 with high precision, accurate temperature measurement is a prerequisite. Conventionally, the temperature of the board 3 has been measured using a non-contact type thermometer 12 such as an infrared radiation thermometer because the board 3 is exposed to high voltage (several hundred volts) during operation, which is dangerous. It was commonly used.
非接触式の温度計12の場合、例えば放射熱線
を利用するものでは、測定対象物以外の物の表面
温度が外乱として入り易く、正確な温度測定がで
きにくい欠点がある。 In the case of a non-contact type thermometer 12, for example, one that uses radiant heat rays has the disadvantage that the surface temperature of objects other than the object to be measured easily enters as a disturbance, making it difficult to accurately measure the temperature.
また、例えば赤外線温度計等のように、温度計
本体の先端に取り付けたガラス窓部を通して温度
測定する構成の場合、ガラス窓部が操業につれて
蒸着されてしまい、被蒸着基材からの放射エネル
ギを減衰させることから、前記同様、正確な測定
ができにくい欠点がある。 Furthermore, in the case of an infrared thermometer that measures temperature through a glass window attached to the tip of the thermometer, the glass window is deposited during operation, and the radiant energy from the substrate to be deposited is absorbed. Because of the attenuation, there is a drawback that accurate measurement is difficult as described above.
本考案は上記事情に鑑みてなされたもので、正
確かつ迅速な測定ができ、かつ、測定対象物に高
電圧がかかつている場合でも安全に温度測定が行
える温度測定装置を提供することを目的とする。 The present invention was developed in view of the above circumstances, and the purpose is to provide a temperature measuring device that can perform accurate and quick measurements, and that can safely measure temperature even when high voltage is applied to the object to be measured. shall be.
「問題点を解決するための手段」
本考案では、両先端部が互いに電気的に接続さ
れた熱電対素線と、該熱電対素線の先端接続部分
を覆うように設けられ、かつ熱伝導率が高い絶縁
性材料から作られた、温度測定対象物に接触され
る温度測定対象物接触部と、前記熱電対素線を覆
うよう設けられた保護管と、前記温度測定対象物
接触部の外周に設けられた絶縁性材料から作られ
たカバーとを備えて成り、前記カバーと前記保護
管との間には、一部に外方から見ることができな
い非露出部を有する屈曲溝が周方向に連続して形
成されていることを特徴としている。"Means for Solving the Problem" In the present invention, both ends of the thermocouple wire are electrically connected to each other, and the thermocouple wire is provided so as to cover the end connection portion of the thermocouple wire, and the end portions of the thermocouple wire are electrically connected to each other. A temperature measurement object contacting part that is made of a highly insulating material and is in contact with the temperature measurement object; a protection tube provided to cover the thermocouple wire; a cover made of an insulating material provided on the outer periphery, and a bent groove having a non-exposed part that cannot be seen from the outside is provided between the cover and the protective tube. It is characterized by being formed continuously in the direction.
「作用」
本考案の装置では、熱電対素線の先端に取り付
けられた絶縁性材料からなる部分を、温度測定対
象物に接触させることで、この部分を通して熱電
対素により温度測定が行える。"Operation" In the device of the present invention, by bringing the part made of an insulating material attached to the tip of the thermocouple wire into contact with the object to be measured, temperature can be measured by the thermocouple element through this part.
また、この装置を、例えばイオンプレーテイン
グ装置の真空容器内に挿入したままで蒸着作業を
進め、装置の外周に導電性材料から成る蒸着層が
形成されたとしても、当該装置には、予めカバー
と前記保護管との間に、一部に外方から見ること
ができない非露出部を有する屈曲溝が周方向に連
続して形成されているため、装置外周に形成され
た蒸着層の中間部分を電気的に遮断させることが
できる。 Furthermore, even if this device is inserted into the vacuum chamber of an ion plating device and a vapor deposition layer is formed around the outer periphery of the device, the device must be covered in advance. A bending groove having an unexposed part that cannot be seen from the outside is formed continuously in the circumferential direction between the protective tube and the middle part of the vapor deposited layer formed on the outer periphery of the device. can be electrically interrupted.
したがつて、外周に蒸着膜が形成された当該装
置を、イオンプレーテイング装置の高電圧がかけ
られる蒸着基板に接触されたとしても、当該装置
を介して蒸着基板から測定基側あるいは真空容器
電気が流れることがない。 Therefore, even if the device with a vapor deposited film formed on its outer periphery is brought into contact with the vapor deposition substrate to which a high voltage is applied in the ion plating device, there will be no electrical connection from the vapor deposition substrate to the measurement base side or the vacuum vessel through the device. never flows.
「実施例」
以下、本考案の一実施例を第1図を参照して説
明する。"Embodiment" An embodiment of the present invention will be described below with reference to FIG.
この実施例は、イオンプレーテイング装置の蒸
着基板の温度測定を行なう場合に、本考案の装置
を用いた場合を示す。 This example shows a case where the apparatus of the present invention is used to measure the temperature of a deposition substrate of an ion plating apparatus.
図中符号21は真空容器の側壁である。この側
壁21には本考案に係る温度測定装置Sが、貫通
状態でかつ側壁21に直交する方向に移動自在に
配設されており、この測定装置Sによつて測定対
象物である蒸着基板3の温度が測定される。 Reference numeral 21 in the figure is a side wall of the vacuum container. A temperature measuring device S according to the present invention is provided in this side wall 21 in a penetrating state and movable in a direction orthogonal to the side wall 21. temperature is measured.
上記温度測定装置Sについて詳しく説明する
と、符号22はほぼ円筒状に形成された保護管
で、その内部中央には絶縁材23を介して熱電対
素線24a,24bが埋め込まれている。熱電対
素線24a,24bは両先端が互いに電気的に接
続されていて、その先端接続部分は、耐電圧があ
りしかも熱伝導率の高い絶縁材料からなる部材
(接触部)25の外表面25aから若干内側へ入
つた位置に埋め込まれている。 To explain the temperature measuring device S in detail, reference numeral 22 is a protective tube formed in a substantially cylindrical shape, and thermocouple wires 24a and 24b are embedded in the center of the tube with an insulating material 23 in between. Both ends of the thermocouple wires 24a and 24b are electrically connected to each other, and the end connection part is connected to the outer surface 25a of a member (contact part) 25 made of an insulating material with withstand voltage and high thermal conductivity. It is embedded in a position slightly inward from the
上記部材25は、測定時において当該装置が図
中左方へ移動された際に、際測定対象物である蒸
着基板3に直接接触されるものである。この部材
25の外周には、耐電圧がある絶縁材料から作ら
れた有底円筒状のカバー26が、その底部26a
を嵌合されて前記保護管22に対して同心状に取
り付けられている。また、カバー26の円筒部2
6bは保護管22側に延在されていて、該円筒部
26bと保護管22の先端小径部22aとの間に
は、全周に亙つてクリアランスCが形成されてい
る。 The member 25 is brought into direct contact with the vapor deposition substrate 3, which is the object to be measured, when the apparatus is moved to the left in the figure during measurement. A bottomed cylindrical cover 26 made of an insulating material with withstand voltage is placed around the outer periphery of this member 25 at its bottom 26a.
are fitted and attached concentrically to the protection tube 22. Further, the cylindrical portion 2 of the cover 26
6b extends toward the protection tube 22 side, and a clearance C is formed between the cylindrical portion 26b and the small diameter portion 22a at the tip end of the protection tube 22 over the entire circumference.
すなわち、カバー26と保護管22との間に
は、一部に外方から見ることができない非露出部
27aを有する屈曲溝27が周方向に連続して形
成されて成るクリアランスCが設けられており、
両者間は、沿面距離が長いラビリンス構造となつ
ている。 That is, a clearance C is provided between the cover 26 and the protection tube 22, in which a bending groove 27 is formed continuously in the circumferential direction, and the bent groove 27 has a non-exposed portion 27a that cannot be seen from the outside. Ori,
The space between the two has a labyrinth structure with a long creepage distance.
また、本考案に係る測定装置Sが貫通する真空
容器の側壁21には厚肉部28が形成されるとと
もに、該厚肉部28の内周にはシール部材29が
2連に嵌合され、これにより測定装置Sの真空容
器続側壁貫通部分のシール性が確保されている。
さらに、厚肉部28の内部にはリング状のウオー
タジヤケツト30が形成され、このウオータジヤ
ケツト30には、冷却器(図示せず)経過後の適
宜温度に冷却された水が、循環供給されるように
なつている。すなわち、耐熱性の面からも十分に
シール性が確保できるよう考慮されている。 Further, a thick wall portion 28 is formed on the side wall 21 of the vacuum container through which the measuring device S according to the present invention penetrates, and two sealing members 29 are fitted on the inner periphery of the thick wall portion 28. This ensures the sealing performance of the portion of the measuring device S that penetrates the side wall adjacent to the vacuum container.
Furthermore, a ring-shaped water jacket 30 is formed inside the thick walled portion 28, and water cooled to an appropriate temperature after passing through a cooler (not shown) is circulated and supplied to the water jacket 30. It is becoming more and more common. In other words, consideration has been given to ensuring sufficient sealing performance from the standpoint of heat resistance.
また、前記真空容器の側壁21には厚肉部28
から側壁内方に向かつて円筒部31が形成され、
これにより、測定装置Sの真空容器側壁貫通部か
ら内方へ所定距離挿入された部分が覆われるよう
になつている。このように、側壁に円筒部31を
形成したのは、これがないと、保護管22の外周
に次第に蒸着物が付着堆積して保護管22の外径
が大となり、ひいては、測定装置側壁貫通部の良
好なシール性が確保されなくなるおそれがあるた
めである。 Further, a thick portion 28 is provided on the side wall 21 of the vacuum container.
A cylindrical portion 31 is formed facing inward from the side wall,
As a result, the portion of the measuring device S that is inserted a predetermined distance inward from the vacuum vessel side wall penetrating portion is covered. The reason for forming the cylindrical portion 31 on the side wall in this way is that without it, vapor deposits would gradually accumulate on the outer periphery of the protective tube 22, increasing the outer diameter of the protective tube 22, and as a result, the measuring device side wall penetrating portion This is because good sealing performance may not be ensured.
なお、熱電対素線24a,24bの基端部に
は、周知の如く補償導線等を介して、温度表示器
や被付着対象物の温度を自動制御するための制御
系が接続されている。 As is well known, a temperature indicator and a control system for automatically controlling the temperature of the object to be adhered are connected to the base ends of the thermocouple wires 24a and 24b via compensation conductors or the like.
次に、上記測定装置Sを用いて被対象物の温度
測定をする場合について説明する。 Next, a case will be described in which the temperature of a target object is measured using the measuring device S.
測定装置Sは、測定をしないときには図に示す
ように、先端が測定対象物である蒸着基板3から
距離L離れた位置に待機されている。 When the measuring device S is not performing measurements, as shown in the figure, the measuring device S is placed on standby at a position where its tip is a distance L away from the vapor deposition substrate 3, which is the object to be measured.
蒸着基板3の温度を測定する場合には、手動に
よりあるいは図示せぬ適宜駆動手段によつて測定
装置Sを真空容器内に押し込み、測定装置S先端
の部材25を蒸着基板3に接触させる。 When measuring the temperature of the vapor deposition substrate 3, the measuring device S is pushed into the vacuum container manually or by an appropriate drive means (not shown), and the member 25 at the tip of the measuring device S is brought into contact with the vapor deposition substrate 3.
このとき、測定装置Sの移動量は僅かの距離L
で足りる。このことは、通常測定装置を真空容器
外に配置しておき、測定のときだけ真空容器内に
挿入させたり、あるいは同測定装置を真空容器側
壁近傍位置に待機させたりする場合に比べ、測定
装置Sの移動時間を短くすることができ、測定時
間を短縮できる点で有利である。 At this time, the amount of movement of the measuring device S is a small distance L
That's enough. This means that the measurement device is normally placed outside the vacuum vessel and inserted into the vacuum vessel only for measurement, or the measurement device is placed on standby near the side wall of the vacuum vessel. This is advantageous in that the moving time of S can be shortened and the measurement time can be shortened.
また、測定装置Sの先端部材25等が予め蒸着
基板3近傍の雰囲気温度になつており、先端部材
25を蒸着基板3に接触させた際、同先端部材2
5の温度が蒸着基板3の表面温度に達するまでの
時間が短く、この点からも、測定時間の短縮化が
図れる。 Further, the tip member 25 and the like of the measuring device S have been brought to the ambient temperature near the vapor deposition substrate 3 in advance, and when the tip member 25 is brought into contact with the vapor deposition substrate 3, the tip member 25
It takes a short time for the temperature of No. 5 to reach the surface temperature of the deposition substrate 3, and from this point of view as well, the measurement time can be shortened.
また、測定装置Sの先端に取り付けている部材
25を熱伝導率の高い材料で作つていること、ま
た実際に測定を行なう熱電対素線24a,24b
の接続された部分が部材先端25a近くに埋め込
まれていることも、測定時間の短縮化並びに測定
精度の向上に寄与する。 In addition, the member 25 attached to the tip of the measuring device S is made of a material with high thermal conductivity, and the thermocouple wires 24a and 24b used for actual measurement
The fact that the connected portion is embedded near the member tip 25a also contributes to shortening measurement time and improving measurement accuracy.
また、温度測定のときには、通常安全性確保の
ため蒸着基板3へ高電圧をかけるのを停止する
が、そのとき、同時に基板加熱用のヒータも停止
するため、蒸着基板3の温度は序々に低下してし
まう。したがつて、蒸着基板3に対する正確な温
度測定はむづかしくなるが、上記装置の場合、前
述したように蒸着基板3の温度測定時間を短くし
得るため、操業時に近い状態の基板温度測定が行
なえることとなる。 Furthermore, when measuring temperature, the application of high voltage to the evaporation substrate 3 is usually stopped to ensure safety, but at the same time, the heater for heating the substrate is also stopped, so the temperature of the evaporation substrate 3 gradually decreases. Resulting in. Therefore, it is difficult to accurately measure the temperature of the evaporation substrate 3, but in the case of the above-mentioned device, since the temperature measurement time of the evaporation substrate 3 can be shortened as described above, it is possible to measure the substrate temperature in a state close to that during operation. The Rukoto.
また、蒸着を繰り返しているうちに、測定装置
Sの真空容器内に挿入されている部分の外周には
次第に蒸着物Gが堆積することとなる。該蒸着物
Gが導電性材料である場合、誤つて蒸着基板3に
高電圧をかけた際に、上記蒸着物Gによつて放電
が起こるおそれがある。 Furthermore, as the vapor deposition is repeated, the vapor deposits G gradually accumulate on the outer periphery of the portion of the measuring device S that is inserted into the vacuum container. If the vapor deposit G is a conductive material, there is a risk that the vapor deposit G will cause discharge when a high voltage is applied to the vapor deposition substrate 3 by mistake.
しかしながら、上記測定装置の場合、カバー2
6と保護管22との間が、全周にクリアランスC
が形成されたラビリンス構造となつており、測定
装置外周の沿面距離を長くしているため、上記の
如く温度測定中において誤つて蒸着基板3に高電
圧をかけた場合でも、蒸着物Gの電気的接触が絶
たれ、該蒸着物Gを介して蒸着基板3から真空容
器側へ電気が流れることはない。したがつて、安
全性の面で優れる。なお、十分に安全に留意すれ
ば、操業中(つまり、蒸着基板3に高電圧をかけ
たままの状態)の蒸着基板3の温度測定も可能と
なる。 However, in the case of the above measuring device, the cover 2
6 and the protection tube 22, there is a clearance C around the entire circumference.
It has a labyrinth structure with a long creepage distance around the outer periphery of the measuring device, so even if a high voltage is accidentally applied to the evaporation substrate 3 during temperature measurement as described above, the electricity of the evaporation material G will be maintained. The direct contact is broken, and no electricity flows from the deposition substrate 3 to the vacuum container side via the deposited material G. Therefore, it is superior in terms of safety. In addition, if sufficient safety is taken into consideration, it is also possible to measure the temperature of the vapor deposition substrate 3 during operation (that is, while a high voltage is being applied to the vapor deposition substrate 3).
「考案の効果」
以上説明した本考案によれば、以下の優れた効
果を奏する。"Effects of the Invention" According to the present invention described above, the following excellent effects are achieved.
測定装置のカバーと保護管との間に、一部に
外方から見ることができない非露出部を有する
屈曲溝が周方向に連続して形成されて、ラビリ
ンス構造が形成されているため、イオンプレー
テイング装置内に配置した状態で操業し、当該
測定装置の外周に導電性材料が蒸着したとして
も、該蒸着した導電性材料を電気的に遮断させ
た状態にすることができる。したがつて、測定
中において測定対象物に電圧がかかつても安全
性が確保できる。 A labyrinth structure is formed between the cover of the measurement device and the protective tube by forming a bending groove that partially has non-exposed parts that cannot be seen from the outside, forming a labyrinth structure. Even if a conductive material is deposited on the outer periphery of the measuring device during operation while placed in a plating device, the deposited conductive material can be electrically cut off. Therefore, safety can be ensured even if voltage is applied to the object to be measured during measurement.
上記のように、測定装置をイオンプレーテイ
ング装置内に挿入した状態のままで操業ができ
ることから、測定装置を測定対象物に接近した
状態のままの操業が可能となる。測定装置を測
定対象物に接近させ得ることは、測定に際し測
定装置自体の移動距離が短くなること、測定装
置が予め測定対象物近傍の雰囲気温度になつて
いることから、測定時間の短縮化が図れ、ひい
ては、温度が変化し易い対象物を比較的正確に
温度測定できる。 As described above, since the measuring device can be operated while being inserted into the ion plating device, it is possible to operate the measuring device while being close to the object to be measured. Being able to bring the measuring device closer to the object to be measured reduces the distance that the measuring device itself must move during measurement, and because the measuring device is already at the ambient temperature near the object to be measured, the measurement time can be shortened. In addition, it is possible to relatively accurately measure the temperature of an object whose temperature changes easily.
第1図は本考案の一実施例を示す断面図、第2
図はイオンプレーテイング装置における基板の温
度測定の一従来例を示す図である。
22……保護管、24a,24b……熱電対素
線、25……部材(接触部)、26……カバー、
27a……非露出部、27……屈曲溝、C……ク
リアランス、G……蒸着物。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure shows a conventional example of temperature measurement of a substrate in an ion plating apparatus. 22... Protection tube, 24a, 24b... Thermocouple wire, 25... Member (contact part), 26... Cover,
27a... Non-exposed portion, 27... Bend groove, C... Clearance, G... Vapor deposit.
Claims (1)
線24a,24bと、該熱電対素線の先端接続部
分を覆うように設けられ、かつ熱伝導率が高い絶
縁性材料から作られた、温度測定対象物に接触さ
れる温度測定対象物接触部25と、前記熱電対素
線を覆うよう設けられた保護管22と、前記温度
測定対象物接触部の外周に設けられた絶縁性材料
から作られたカバー26とを備えて成り、前記カ
バーと前記保護管との間には、一部に外方から見
ることができない非露出部27aを有する屈曲溝
27が周方向に連続して形成されていることを特
徴とする温度測定装置。 Thermocouple wires 24a and 24b whose ends are electrically connected to each other, and a thermocouple wire provided to cover the end connection portion of the thermocouple wires and made of an insulating material with high thermal conductivity. A temperature measurement object contacting part 25 that contacts the temperature measurement object, a protection tube 22 provided to cover the thermocouple wire, and an insulating material provided on the outer periphery of the temperature measurement object contacting part. A bent groove 27 having a non-exposed part 27a that cannot be seen from the outside is formed continuously in the circumferential direction between the cover and the protective tube. A temperature measuring device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15479187U JPH059628Y2 (en) | 1987-10-09 | 1987-10-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15479187U JPH059628Y2 (en) | 1987-10-09 | 1987-10-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0159836U JPH0159836U (en) | 1989-04-14 |
| JPH059628Y2 true JPH059628Y2 (en) | 1993-03-10 |
Family
ID=31431840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15479187U Expired - Lifetime JPH059628Y2 (en) | 1987-10-09 | 1987-10-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH059628Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2641606B2 (en) * | 1990-08-15 | 1997-08-20 | 株式会社日立製作所 | Temperature detector |
-
1987
- 1987-10-09 JP JP15479187U patent/JPH059628Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0159836U (en) | 1989-04-14 |
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