JPH059707Y2 - - Google Patents

Description

[Detailed Description of the Invention] (a) Field of Industrial Application The present invention relates to a display device having display segments in a matrix.

(b) Prior art As a display device having matrix-like display segments, Nikkei Electronics January 2, 1984
Article in the issue of “Flats for displaying documents and images”
There are various types of display devices, such as those using liquid crystal displays and those using electroluminescent displays, as disclosed in ``Panel Displays'', but currently, it is possible to reduce power consumption and increase capacity. In some respects, the future potential of liquid crystal displays is highly evaluated.

A plan view of such a conventional liquid crystal display device is shown in Figure 2a.
Figure b shows a sectional view taken along the - line. In these figures, 10 is the first glass substrate;
Reference numeral 1 designates transparent electrodes made of ITO that are arranged in rows and columns on a first glass substrate 10 with an insulating film 12 made of nitrogen silicon interposed therebetween, and constitute matrix segments.
13 is an amorphous silicon film in which a plurality of transparent electrodes 11, 11, . 14 is a drain line made of a plurality of aluminum films arranged vertically in parallel on the left side of each amorphous silicon film 13 with the insulating film 12 interposed therebetween, partially overlapping the same. 15, 15... are the respective transparent electrodes 11, 11... which are partially overlapped on the right side of each amorphous silicon film 13... with the insulating film 12 interposed therebetween.
A source electrode made of an aluminum film arranged correspondingly to the transparent electrodes 11, 11 on the right side
It is connected to the lower left end of... 16 denotes a gate made of a two-layer film of gold and chromium, which is formed between the first glass substrate 10 and the insulating film 12 by arranging a plurality of transparent electrodes 11, 11 in parallel in the lateral direction with respect to the gap position. The gate electrodes 17 below the amorphous silicon films 13 are formed integrally with the lines 16 in the gaps between the source electrodes 15 and the drain lines 14. That is, the drain line 14 indicated by D in the figure...the drain electrode, the source electrode 15 indicated by S, and the G
The gate electrode 17 shown as . . . and these electrodes D, S,
Amorphous silicon film 13 bonded to G...
A switching transistor consisting of a thin film FET is constructed depending on the location, and each transparent electrode 1
1, 11... are connected to the drain lines 14... through the corresponding switching transistors. 18 is each of the above transparent electrodes 11, 1
1... and drain lines 14... are all covered with an alignment film.

On the other hand, 20 is a second glass substrate, and a common electrode 21 and an alignment film 28 are sequentially formed on the lower surface thereof, that is, the surface facing the first glass substrate 10.

Reference numeral 3 denotes a liquid crystal substance sealed between the substrates 10 and 20, and 11 transparent electrodes on the first glass substrate 10 to which a voltage is applied when the switching transistor turns on for each matrix segment. The liquid crystal substance 5 causes an electro-optic effect.

Since the above-mentioned display device is provided with as many as 50,000 display segments, the dimensions of these segments are approximately 120 μm x 120 μm, and each electrode wiring 1
4, 16, ... have a fine structure with a line width of approximately 30 μm, each electrode wiring 14 may be damaged during the manufacturing process due to adhesion of dust, defects in the master, or air bubbles in the resist. ,16,...
The disadvantage was that disconnection accidents were likely to occur.

In detail, this disconnection accident occurred on a flat glass substrate 1.
It has been found that the occurrence is more concentrated in the drain lines 14 formed on the uneven multilayer structure than in the gate lines 16 formed on the uneven surface.

Therefore, as shown in the plan view of FIG. 3a and the sectional view taken along the line '-' of FIG. A display device is proposed which is provided with a rectangular bypass line 19 hidden along the drain line in an independent state, and in which the disconnection point O of the drain line can be electrically connected (contact C) with the bypass line 19. (Jitsugan No. 59-26506).

However, in this way, the drain line 14
If the bypass line 19 and the gate line 16 were formed at the same layer by etching at the same time, the bypass line 19 and the gate line 1
Since the gate electrode 17 of No. 6 is close to each other, there is a risk that an accident may occur in which these electrodes 16 and 17 are short-circuited due to poor etching as shown in FIG.

(c) Problems to be solved by the invention The present invention has been made in view of the above points, and provides a display device that can prevent short-circuit accidents between the gate line and the bypass line for the drain line. .

(d) Means for Solving the Problems The display device of the present invention includes a rectangular bypass line hidden along the drain line and separated from the gate line via an insulating film. and a drain line are connected to each other.

(E) Effect According to the present invention, even if a disconnection accident occurs in the drain line, the drain line can be electrically connected by the bypass line connected to the drain line, and furthermore, the bypass line can be connected to the bypass line. There will be no short circuit with the gate line due to these interlayer insulating films.

(F) Example An example of the present invention is shown in FIG. This figure is a cross-sectional view of the main part of the first substrate 10, which is a feature of the present invention, and is a sectional view of the main part of the first substrate 10, which is a feature of the present invention, and is similar to the plan view of the previously proposed device in FIG. 3a.
It corresponds to the −′ line cross section. In Figure 1,
10, 11, 12, 13, 14, 15, 17, 1
8 is the first substrate as in FIGS. 2 and 3, respectively;
A transparent electrode, an insulating film, an amorphous silicon film drain line, a source electrode, a gate electrode, and an alignment film are shown. The difference between this embodiment device and the device shown in FIG. An interlayer insulating film 100 is interposed between the bypass line 19' and the gate line having the gate electrode 17.

That is, in FIG. 1, the first glass substrate 1
An interlayer insulating film 100 as a base insulating film made of silicon oxide is deposited on top of the insulating film 100.
In addition to flattening the unevenness caused by roughness on the surface of the first glass substrate 10,
This prevents the generation of impurities from zero and eliminates the inconvenience that these impurities have an adverse effect on the switching transistor. However, before forming the insulating film 100 on the first glass substrate 10, The bypass line 19' for the drain line, which has a two-layer structure of gold and chromium, is formed on the glass substrate 10 to a thickness of about 500 Å. Thereafter, as described above, a silicon oxide film is formed to a thickness of about 1000 Å as an interlayer insulating film 100 for the bypass line 19' and the gate line having the gate electrode 17.
Thereafter, similarly to the conventional display device, an insulating film 12 made of silicon nitride with a thickness of about 3000 Å, an amorphous silicon film 13 with a thickness of about 1200 Å, a drain line 14 and a source electrode 15 made of aluminum with a thickness of about 1 μm are sequentially formed. A switching transistor is obtained. This drain line 14
When forming the bypass line 19',
Contact holes are provided in the interlayer insulating film 100 and the insulating film 12 at, for example, three locations at both ends and in the middle of the upper portion, so that the drain line 14 and the bypass line 19' are electrically coupled. Furthermore, a transparent electrode 11 made of ITO with a thickness of about 1000 Å is formed, and finally an alignment film is deposited.

Therefore, as shown in FIG.
Even if residual films K and K are formed due to poor etching when forming the gate line having gate electrode 9' and gate electrode 17, the presence of interlayer insulating film 100 prevents these two from being short-circuited. There's no danger of it happening.

(g) Effects of the invention The display device of the invention includes a rectangular bypass line that is hidden along the drain line and is independent from the gate line via an insulating film, and the bypass line and the drain line are connected to each other. Because they are connected to each other, even if a disconnection accident occurs in the drain line, not only can the drain line be electrically connected by the bypass line connected to this drain line, but also the bypass line and gate line can be connected to each other. These short circuit accidents can be prevented by the interlayer insulating film between the two.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view of a main part of an embodiment of the display device of the present invention, Fig. 2 a and b are a plan view of a conventional device and a cross-sectional view thereof taken along the line 3, and Fig. 3 a and b are a diagram of a previously proposed device. A plan view and a cross-sectional view taken along the line '--', FIG. 4 is a plan pattern diagram of the main parts of the previously proposed device, and FIG. 5 is a cross-sectional view of the main parts of the device of the present invention. 10...First glass substrate, 11...Transparent electrode, 14...Drain line, 16...Gate line, 17...Gate electrode, 19, 19'...Bypass line, 100...Interlayer insulating film.

Claims (1)

[Scope of utility model registration request] A plurality of gate lines arranged in parallel intersect with a plurality of drain lines arranged in parallel on the gate lines via an interlayer insulating film, and a switching transistor consisting of an FET is formed at each intersection in the matrix. In a display device in which a display segment electrode is connected to the source side of each transistor, a rectangular strip hidden along the drain line and independent from the gate line with an insulating film interposed therebetween. 1. A display device comprising a bypass line, the bypass line and the drain line being coupled to each other.