JPH06101505B2 - 半導体のイオン注入用量レベル評価方法及び装置 - Google Patents
半導体のイオン注入用量レベル評価方法及び装置Info
- Publication number
- JPH06101505B2 JPH06101505B2 JP2409840A JP40984090A JPH06101505B2 JP H06101505 B2 JPH06101505 B2 JP H06101505B2 JP 2409840 A JP2409840 A JP 2409840A JP 40984090 A JP40984090 A JP 40984090A JP H06101505 B2 JPH06101505 B2 JP H06101505B2
- Authority
- JP
- Japan
- Prior art keywords
- reflected
- dose level
- pump beam
- thickness
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 28
- 238000011156 evaluation Methods 0.000 title claims description 11
- 238000005468 ion implantation Methods 0.000 title description 15
- 239000000523 sample Substances 0.000 claims description 61
- 238000005259 measurement Methods 0.000 claims description 37
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 239000007943 implant Substances 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 150000002500 ions Chemical class 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000013178 mathematical model Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- -1 arsenic ions Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012067 mathematical method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/1702—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/448882 | 1989-12-12 | ||
| US07/448,882 US5074669A (en) | 1989-12-12 | 1989-12-12 | Method and apparatus for evaluating ion implant dosage levels in semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03252152A JPH03252152A (ja) | 1991-11-11 |
| JPH06101505B2 true JPH06101505B2 (ja) | 1994-12-12 |
Family
ID=23782020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2409840A Expired - Lifetime JPH06101505B2 (ja) | 1989-12-12 | 1990-12-12 | 半導体のイオン注入用量レベル評価方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5074669A (fr) |
| EP (1) | EP0432963B1 (fr) |
| JP (1) | JPH06101505B2 (fr) |
| DE (1) | DE69029027T2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002544501A (ja) * | 1999-05-11 | 2002-12-24 | ケーエルエー−テンカー コーポレイション | 試料を非破壊計測するためのシステム |
Families Citing this family (79)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172191A (en) * | 1991-08-06 | 1992-12-15 | The United States Of America As Represented By The Secretary Of The Army | Sweeping photoreflectance spectroscopy |
| US5185273A (en) * | 1991-09-30 | 1993-02-09 | Motorola, Inc. | Method for measuring ions implanted into a semiconductor substrate |
| JP3462272B2 (ja) * | 1994-09-07 | 2003-11-05 | 浜松ホトニクス株式会社 | アレイ電極基板の検査装置 |
| US5574562A (en) * | 1994-12-19 | 1996-11-12 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for evaluation of high temperature superconductors |
| US5706094A (en) * | 1995-08-25 | 1998-01-06 | Brown University Research Foundation | Ultrafast optical technique for the characterization of altered materials |
| US6008906A (en) * | 1995-08-25 | 1999-12-28 | Brown University Research Foundation | Optical method for the characterization of the electrical properties of semiconductors and insulating films |
| US6321601B1 (en) | 1996-08-06 | 2001-11-27 | Brown University Research Foundation | Optical method for the characterization of laterally-patterned samples in integrated circuits |
| US5748318A (en) * | 1996-01-23 | 1998-05-05 | Brown University Research Foundation | Optical stress generator and detector |
| US6175416B1 (en) | 1996-08-06 | 2001-01-16 | Brown University Research Foundation | Optical stress generator and detector |
| US5844684A (en) * | 1997-02-28 | 1998-12-01 | Brown University Research Foundation | Optical method for determining the mechanical properties of a material |
| DE19781728B4 (de) * | 1996-04-26 | 2007-10-18 | Brown University Research Foundation | Optisches Verfahren und System zum Bestimmen mechanischer Eigenschaften eines Materials |
| EP1023595A4 (fr) * | 1996-11-22 | 2003-07-09 | Perceptron Inc | Procede et systeme de traitement de signaux de mesure pour l'obtention d'une valeur concernant un parametre physique |
| US6128081A (en) * | 1996-11-22 | 2000-10-03 | Perceptron, Inc. | Method and system for measuring a physical parameter of at least one layer of a multilayer article without damaging the article and sensor head for use therein |
| US5748317A (en) * | 1997-01-21 | 1998-05-05 | Brown University Research Foundation | Apparatus and method for characterizing thin film and interfaces using an optical heat generator and detector |
| US5978074A (en) * | 1997-07-03 | 1999-11-02 | Therma-Wave, Inc. | Apparatus for evaluating metalized layers on semiconductors |
| US5864393A (en) * | 1997-07-30 | 1999-01-26 | Brown University Research Foundation | Optical method for the determination of stress in thin films |
| WO1999013318A1 (fr) * | 1997-09-05 | 1999-03-18 | Brown University Research Foundation | Procede optique de caracterisation des proprietes electriques de semi-conducteurs et pellicules isolantes |
| US6049220A (en) | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
| US6054868A (en) * | 1998-06-10 | 2000-04-25 | Boxer Cross Incorporated | Apparatus and method for measuring a property of a layer in a multilayered structure |
| EP1092123B1 (fr) * | 1998-06-30 | 2006-12-27 | Lockheed Martin Corporation | Technique et appareil permettant de detecter des deplacements supersoniques de surface par amplification optique post-detection |
| US6657733B1 (en) | 1998-06-30 | 2003-12-02 | Lockheed Martin Corporation | Method and apparatus for detecting ultrasonic surface displacements using post-collection optical amplification |
| US6122060A (en) * | 1998-06-30 | 2000-09-19 | Lockheed Martin Corporation | Method and apparatus for detecting ultrasonic surface displacements using post-collection optical amplification |
| US6038026A (en) | 1998-07-07 | 2000-03-14 | Brown University Research Foundation | Apparatus and method for the determination of grain size in thin films |
| US6025918A (en) * | 1998-07-07 | 2000-02-15 | Brown University Research Foundation | Apparatus and method for measurement of the mechanical properties and electromigration of thin films |
| WO2000020841A1 (fr) | 1998-10-05 | 2000-04-13 | Kla-Tencor Corporation | Systeme interferometrique de mesure de perturbation d'un echantillon |
| US6595685B2 (en) * | 1998-10-13 | 2003-07-22 | National Research Laboratory Of Metrology | Method and apparatus for measuring thermophysical properties |
| US6323951B1 (en) | 1999-03-22 | 2001-11-27 | Boxer Cross Incorporated | Apparatus and method for determining the active dopant profile in a semiconductor wafer |
| US6317216B1 (en) | 1999-12-13 | 2001-11-13 | Brown University Research Foundation | Optical method for the determination of grain orientation in films |
| AU2884401A (en) * | 2000-01-28 | 2001-08-07 | Asahi Kasei Kabushiki Kaisha | Photothermic transducing spectroscopic analyzer |
| US6535285B1 (en) | 2000-02-08 | 2003-03-18 | Therma-Wave, Inc. | Combination thermal wave and optical spectroscopy measurement system |
| US6812047B1 (en) * | 2000-03-08 | 2004-11-02 | Boxer Cross, Inc. | Evaluating a geometric or material property of a multilayered structure |
| US6408048B2 (en) | 2000-03-14 | 2002-06-18 | Therma-Wave, Inc. | Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements |
| US6462817B1 (en) | 2000-05-12 | 2002-10-08 | Carlos Strocchia-Rivera | Method of monitoring ion implants by examination of an overlying masking material |
| US6532070B1 (en) | 2000-07-17 | 2003-03-11 | Therma-Wave, Inc. | Method for determining ion concentration and energy of shallow junction implants |
| US6812045B1 (en) | 2000-09-20 | 2004-11-02 | Kla-Tencor, Inc. | Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation |
| US6919957B2 (en) | 2000-09-20 | 2005-07-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen |
| US6694284B1 (en) | 2000-09-20 | 2004-02-17 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least four properties of a specimen |
| US6673637B2 (en) | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
| US7106425B1 (en) | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
| US6633831B2 (en) | 2000-09-20 | 2003-10-14 | Kla Tencor Technologies | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US6782337B2 (en) | 2000-09-20 | 2004-08-24 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension an a presence of defects on a specimen |
| US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US7130029B2 (en) | 2000-09-20 | 2006-10-31 | Kla-Tencor Technologies Corp. | Methods and systems for determining an adhesion characteristic and a thickness of a specimen |
| US6911349B2 (en) * | 2001-02-16 | 2005-06-28 | Boxer Cross Inc. | Evaluating sidewall coverage in a semiconductor wafer |
| US6812717B2 (en) * | 2001-03-05 | 2004-11-02 | Boxer Cross, Inc | Use of a coefficient of a power curve to evaluate a semiconductor wafer |
| US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
| US6971791B2 (en) * | 2002-03-01 | 2005-12-06 | Boxer Cross, Inc | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough |
| US6958814B2 (en) * | 2002-03-01 | 2005-10-25 | Applied Materials, Inc. | Apparatus and method for measuring a property of a layer in a multilayered structure |
| US6989899B2 (en) * | 2002-03-18 | 2006-01-24 | Therma-Wave, Inc. | Ion implant monitoring through measurement of modulated optical response |
| US6825933B2 (en) | 2002-06-07 | 2004-11-30 | N&K Technology, Inc. | Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring |
| US7106446B2 (en) * | 2002-06-21 | 2006-09-12 | Therma-Wave, Inc. | Modulated reflectance measurement system with multiple wavelengths |
| US7126690B2 (en) * | 2002-09-23 | 2006-10-24 | Therma-Wave, Inc. | Modulated reflectance measurement system using UV probe |
| US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| US6963393B2 (en) * | 2002-09-23 | 2005-11-08 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
| AU2003285726A1 (en) * | 2002-11-27 | 2004-06-18 | Optical Metrology Patents Limited | An optical spectrometer |
| FR2849195B1 (fr) * | 2002-12-20 | 2005-01-21 | Commissariat Energie Atomique | Biocapteur a substrat quelconque pouvant etre caracterise en deflexion photothermique |
| KR100538092B1 (ko) * | 2003-02-27 | 2005-12-21 | 삼성전자주식회사 | 불순물 농도의 수직 분포 모니터링 방법 및 장치 |
| US7075058B2 (en) * | 2003-03-28 | 2006-07-11 | The United States Of America As Represented By The United States Department Of Energy | Photothermal imaging scanning microscopy |
| US20040253751A1 (en) * | 2003-06-16 | 2004-12-16 | Alex Salnik | Photothermal ultra-shallow junction monitoring system with UV pump |
| US7212288B2 (en) * | 2003-08-14 | 2007-05-01 | Therma-Wave, Inc. | Position modulated optical reflectance measurement system for semiconductor metrology |
| US7280215B2 (en) * | 2003-09-24 | 2007-10-09 | Therma-Wave, Inc. | Photothermal system with spectroscopic pump and probe |
| US7045798B2 (en) * | 2004-02-20 | 2006-05-16 | Applied Materials, Inc. | Characterizing an electron beam treatment apparatus |
| US7026175B2 (en) * | 2004-03-29 | 2006-04-11 | Applied Materials, Inc. | High throughput measurement of via defects in interconnects |
| US7029933B2 (en) * | 2004-06-22 | 2006-04-18 | Tech Semiconductor Singapore Pte. Ltd. | Method for monitoring ion implant doses |
| US7379185B2 (en) | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
| US7499168B2 (en) * | 2006-02-14 | 2009-03-03 | Kla-Tencor Corp. | Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications |
| US7502104B2 (en) * | 2006-08-10 | 2009-03-10 | Kla-Tencor Corporation | Probe beam profile modulated optical reflectance system and methods |
| US20080074668A1 (en) * | 2006-09-21 | 2008-03-27 | Alex Salnik | Modulated optical reflectance measurement system with enhanced sensitivity |
| US7705977B2 (en) * | 2006-12-21 | 2010-04-27 | Kla-Tencor Corporation | Methods for depth profiling in semiconductors using modulated optical reflectance technology |
| US7660686B1 (en) | 2008-04-07 | 2010-02-09 | Kla-Tencor Corporation | Ion implant metrology system with fault detection and identification |
| US7755752B1 (en) | 2008-04-07 | 2010-07-13 | Kla-Tencor Corporation | Combined modulated optical reflectance and photoreflectance system |
| US7920265B1 (en) * | 2008-07-29 | 2011-04-05 | Kla-Tencor Corporation | Apparatus and method for noise reduction in modulated optical reflectance metrology system |
| US8535957B1 (en) * | 2010-06-30 | 2013-09-17 | Kla-Tencor Corporation | Dopant metrology with information feedforward and feedback |
| US9772297B2 (en) * | 2014-02-12 | 2017-09-26 | Kla-Tencor Corporation | Apparatus and methods for combined brightfield, darkfield, and photothermal inspection |
| US9746310B2 (en) * | 2015-11-06 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metrology system and measurement method using the same |
| DE102021127596A1 (de) | 2021-10-22 | 2023-04-27 | Linseis Messgeräte Gesellschaft mit beschränkter Haftung | Temperaturleitfähigkeitsmessgerät |
| CN114739903A (zh) * | 2022-04-01 | 2022-07-12 | 上海精测半导体技术有限公司 | 测量装置及其调节方法、光斑尺寸的获取方法 |
| US20250226266A1 (en) * | 2024-01-10 | 2025-07-10 | Axcelis Technologies, Inc. | In-situ, pre-implant wafer characterization system and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4636088A (en) * | 1984-05-21 | 1987-01-13 | Therma-Wave, Inc. | Method and apparatus for evaluating surface conditions of a sample |
| US4579463A (en) * | 1984-05-21 | 1986-04-01 | Therma-Wave Partners | Detecting thermal waves to evaluate thermal parameters |
| EP0200301A1 (fr) * | 1985-03-01 | 1986-11-05 | Therma-Wave Inc. | Procédé et appareil d'évaluation de caractères de la surface et de l'intérieur d'un semi-conducteur |
| US4755049A (en) * | 1986-12-02 | 1988-07-05 | Ford Motor Company | Method and apparatus for measuring the ion implant dosage in a semiconductor crystal |
-
1989
- 1989-12-12 US US07/448,882 patent/US5074669A/en not_active Expired - Lifetime
-
1990
- 1990-12-05 DE DE69029027T patent/DE69029027T2/de not_active Expired - Fee Related
- 1990-12-05 EP EP90313222A patent/EP0432963B1/fr not_active Expired - Lifetime
- 1990-12-12 JP JP2409840A patent/JPH06101505B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002544501A (ja) * | 1999-05-11 | 2002-12-24 | ケーエルエー−テンカー コーポレイション | 試料を非破壊計測するためのシステム |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03252152A (ja) | 1991-11-11 |
| EP0432963A3 (en) | 1992-06-03 |
| DE69029027T2 (de) | 1997-05-28 |
| DE69029027D1 (de) | 1996-12-05 |
| US5074669A (en) | 1991-12-24 |
| EP0432963A2 (fr) | 1991-06-19 |
| EP0432963B1 (fr) | 1996-10-30 |
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