JPH06108285A - Jig for semiconductor wafer plating - Google Patents

Jig for semiconductor wafer plating

Info

Publication number
JPH06108285A
JPH06108285A JP11659091A JP11659091A JPH06108285A JP H06108285 A JPH06108285 A JP H06108285A JP 11659091 A JP11659091 A JP 11659091A JP 11659091 A JP11659091 A JP 11659091A JP H06108285 A JPH06108285 A JP H06108285A
Authority
JP
Japan
Prior art keywords
plating
semiconductor wafer
jig
contact
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11659091A
Other languages
Japanese (ja)
Other versions
JP2704796B2 (en
Inventor
Hirokazu Ezawa
弘和 江澤
Takashi Yoda
孝 依田
Manabu Tsujimura
学 辻村
Takuya Kanayama
拓也 金山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Toshiba Corp
Original Assignee
Ebara Corp
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Toshiba Corp filed Critical Ebara Corp
Priority to JP11659091A priority Critical patent/JP2704796B2/en
Publication of JPH06108285A publication Critical patent/JPH06108285A/en
Application granted granted Critical
Publication of JP2704796B2 publication Critical patent/JP2704796B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

(57)【要約】 【目的】 半導体ウェハのめっきにおいて、陰極接点が
めっき液にさらされないようにする。 【構成】 めっき液中で半導体ウェハ1を電気めっきす
るためのめっき用治具において、半導体ウェハをめっき
液中に保持する部材3,4に半導体ウェハのめっき面以
外にめっき液が流入しないように半導体ウェハをシール
するシール部材5を設け、該シールされた半導体ウェハ
のめっき液と接触しない面に陰極接点7を設けている。
(57) [Abstract] [Purpose] In plating semiconductor wafers, prevent cathode contacts from being exposed to the plating solution. [Structure] In a plating jig for electroplating a semiconductor wafer 1 in a plating solution, the plating solution is prevented from flowing into members 3 and 4 for holding the semiconductor wafer in the plating solution except for the plating surface of the semiconductor wafer. A sealing member 5 for sealing the semiconductor wafer is provided, and a cathode contact 7 is provided on the surface of the sealed semiconductor wafer that does not come into contact with the plating solution.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウェハのめっき
に係り、特に半導体ウェハをめっきするためのめっき用
治具に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor wafer plating, and more particularly to a plating jig for plating a semiconductor wafer.

【0002】[0002]

【従来の技術】従来、半導体ウェハのバンプめっきは、
歴史的にみると、先ず図6に示されるように、ウェハ2
裏面にワックス又はレジストを被覆してめっき液に漬け
て行う浸漬式に始まり、最近では図7に示されるような
カップ式が主流になっている。いずれの方法でも、図8
に示すように、電気陰極接点部3はレジスト2を破り、
レジスト下のメタル部分1に突き刺す方法をとってい
る。このため、接点部もめっき液にさらされてしまい、
接点先端にもめっきが析出し、接点性能を維持するため
頻度良く接点先端をみがくこと(析出物を除去)や接点
交換が要求されていた。
2. Description of the Related Art Conventionally, bump plating of a semiconductor wafer is
Historically, first, as shown in FIG. 6, the wafer 2
Starting from an immersion method in which the back surface is coated with wax or resist and immersed in a plating solution, a cup method as shown in FIG. 7 has become mainstream recently. Whichever method is used, FIG.
As shown in, the electric cathode contact portion 3 breaks the resist 2,
The metal part 1 under the resist is pierced. Therefore, the contact part is also exposed to the plating solution,
Plating also deposits on the contact tip, and it was necessary to frequently polish the contact tip (remove deposits) and replace the contact in order to maintain contact performance.

【0003】[0003]

【発明が解決しようとする課題】本発明は、従来技術の
欠点を解消し、陰極接点の先端部にめっきが析出しない
半導体ウェハめっき用治具を提供することを目的とす
る。
SUMMARY OF THE INVENTION It is an object of the present invention to solve the drawbacks of the prior art and to provide a semiconductor wafer plating jig in which plating is not deposited on the tip of the cathode contact.

【0004】[0004]

【課題を解決するための手段】上記目的を達成するため
に、本発明では、めっき液中で半導体ウェハを電気めっ
きするためのめっき用治具において、半導体ウェハをめ
っき液中に保持する部材に半導体ウェハのめっき面以外
にめっき液が流入しないように半導体ウェハをシールす
るシール部材を設け、該シールされた半導体ウェハのめ
っき液と接触しない面に陰極接点を設けたことを特徴と
する半導体ウェハめっき用治具としたものである。本発
明で用いる半導体ウェハをシールするシール部材として
は、半導体ウェハのめっき面以外にめっき液が流入しな
いものならすべて用いることができるが、本発明者らが
開発したシリコンやウレタン等の軟質ゴムを用いたW−
リップシールとかC型シールが好適に用いることができ
る。
In order to achieve the above object, in the present invention, in a plating jig for electroplating a semiconductor wafer in a plating solution, a member for holding the semiconductor wafer in the plating solution is used. A semiconductor wafer, characterized in that a sealing member for sealing the semiconductor wafer is provided so that the plating solution does not flow into a portion other than the plating surface of the semiconductor wafer, and a cathode contact is provided on a surface of the sealed semiconductor wafer that does not come into contact with the plating solution. This is a jig for plating. As the sealing member for sealing the semiconductor wafer used in the present invention, any material can be used as long as the plating solution does not flow in other than the plated surface of the semiconductor wafer, but a soft rubber such as silicon or urethane developed by the present inventors is used. W- used
A lip seal or a C-type seal can be preferably used.

【0005】[0005]

【作用】本発明によれば、半導体ウェハのめっき以外の
表面をシールしてめっき液が流入しないようにし、その
流入しない面に陰極接点を設けているので、陰極接点自
体はめっき液と接触せず、陰極接点がめっきされること
がない。また、ウェハ表面の陰極接点を設ける部分が、
レジストが剥離されているので、ウェハ表面と陰極接点
との接触が容易であり、より安定した接点性能が得られ
る。
According to the present invention, the surface of the semiconductor wafer other than the plating is sealed so that the plating solution does not flow in, and the cathode contact is provided on the surface that does not flow in. Therefore, the cathode contact itself should not come into contact with the plating solution. And the cathode contacts are not plated. Also, the part where the cathode contact on the wafer surface is provided is
Since the resist is peeled off, contact between the wafer surface and the cathode contact is easy, and more stable contact performance can be obtained.

【0006】[0006]

【実施例】以下、本発明を実施例により具体的に説明す
るが、本発明はこれらに限定されるものではない。 実施例1 図1に、本発明のめっき用治具の部分拡大図を示す。図
1において、ウェハ1はウェハを保持する部材であるめ
っき用治具3及び4によってはさみ込まれ、シール5
(ここではWリップシールを示す)により、ウェハの裏
面と端面がシールされておりめっき液が流入しないよう
になっている。そして、シール5されたウェハ表面の端
面付近は、レジスト2がカットされたレジスト剥離部6
が設けられメタルがむき出しになっている。陰極接点7
は、このレジスト剥離部6にシール5のリップ間に装着
されたバネ状やクッションの接点7で接続され、治具3
を通って外部に導かれている。また、図2で示されるよ
うに陰極配線は治具4で接続され、シール5内のレジス
ト剥離部6とコンタクトピン15及びコンタクト受16
を通して、箔・導電性ゴム等で接続する陰極接点7とす
ることもできる。
EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited thereto. Example 1 FIG. 1 shows a partially enlarged view of a plating jig of the present invention. In FIG. 1, a wafer 1 is sandwiched by plating jigs 3 and 4 which are members for holding the wafer, and a seal 5
(Here, a W lip seal is shown) to seal the back surface and the end surface of the wafer so that the plating solution does not flow in. Then, in the vicinity of the end face of the wafer surface which is sealed 5, the resist peeling portion 6 where the resist 2 is cut is formed.
Is provided and the metal is exposed. Cathode contact 7
Is connected to the resist stripping section 6 by a spring-shaped or cushion-shaped contact 7 mounted between the lips of the seal 5,
Is led to the outside through. Further, as shown in FIG. 2, the cathode wiring is connected by the jig 4, and the resist peeling portion 6 in the seal 5 and the contact pin 15 and the contact receiver 16 are connected.
It is also possible to make a cathode contact 7 which is connected through a foil, a conductive rubber or the like.

【0007】実施例2 図3に、本発明のめっき用治具の他の実施例である部分
拡大図を示す。図3において、ウェハ1は端部がC型を
したシールで封止されており、この封止されたウェハが
ウェハを保持する部材である治具3と4ではさみ込ま
れ、押付けレバー8を押付けることによってウェハの裏
面と端面にはめっき液が流入しないようにシールされ
る。そして、C型シール5内のウェハ1端面のレジスト
剥離部6にはバネ状の陰極接点7が設けられて、ウェハ
と接触しており、治具3を通って外部に導かれている。
Embodiment 2 FIG. 3 shows a partially enlarged view of another embodiment of the plating jig of the present invention. In FIG. 3, the wafer 1 is sealed with a C-shaped seal at the end, and the sealed wafer is sandwiched by jigs 3 and 4 which are members for holding the wafer, and the pressing lever 8 is pushed. By pressing, the plating solution is sealed so that the back surface and the end surface of the wafer do not flow. A spring-shaped cathode contact 7 is provided on the resist peeling portion 6 on the end surface of the wafer 1 in the C-type seal 5, and is in contact with the wafer, and is guided to the outside through the jig 3.

【0008】実施例3 図4に本発明に用いるめっき用治具の一例である組付治
具の斜視図を示し、図5にウェハをセットとした治具の
断面図を示す。図4及び図5に示すように、治具4にめ
っきをすべき面を上にして、ウェハ1をセットする。め
っきをすべき面だけ穴のあいた治具3を用意し、該穴の
端部に沿ってシールパッキン(前記のWリップシール又
はC型シール)を配備する。該治具3を治具4と合わせ
て、クランパ13で軽くはさみこむことにより、図5の
状態となる。これをめっき液に浸漬することにより、ウ
ェハ表面をめっきする。このとき、シールパッキン内は
実施例1及び2で示したように、陰極接点が設けられて
おり、陰極接点にはめっき液が接触しないようになって
いる。このような治具を用いてめっきを行うことによ
り、良好な結果が得られた。
Embodiment 3 FIG. 4 shows a perspective view of an assembly jig which is an example of a plating jig used in the present invention, and FIG. 5 shows a sectional view of a jig having a wafer as a set. As shown in FIGS. 4 and 5, the wafer 1 is set on the jig 4 with the surface to be plated facing up. A jig 3 having a hole only on the surface to be plated is prepared, and a seal packing (W lip seal or C-type seal described above) is provided along the end of the hole. The jig 3 and the jig 4 are put together and lightly sandwiched by the clamper 13 to obtain the state of FIG. The surface of the wafer is plated by immersing this in a plating solution. At this time, a cathode contact is provided in the seal packing as shown in Examples 1 and 2, and the plating solution does not come into contact with the cathode contact. Good results were obtained by performing plating using such a jig.

【0009】[0009]

【発明の効果】本発明のめっき用治具を用いることによ
り、陰極接点はめっき液と接触せず、陰極接点が変質す
ることがなく、長期間にわたって安定しためっきができ
る。
EFFECTS OF THE INVENTION By using the plating jig of the present invention, the cathode contact does not come into contact with the plating solution, the cathode contact does not deteriorate, and stable plating can be performed for a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のめっき用治具の一例を示す部分拡大図
である。
FIG. 1 is a partially enlarged view showing an example of a plating jig of the present invention.

【図2】本発明のめっき用治具の他の例を示す部分拡大
図である。
FIG. 2 is a partially enlarged view showing another example of the plating jig of the present invention.

【図3】本発明のめっき用治具のもう一つの例を示す部
分拡大図である。
FIG. 3 is a partially enlarged view showing another example of the plating jig of the present invention.

【図4】本発明のめっき用治具を用いた組付治具の斜視
図である。
FIG. 4 is a perspective view of an assembling jig using the plating jig of the present invention.

【図5】図4のウェハをセットした治具の断面図であ
る。
5 is a sectional view of a jig on which the wafer of FIG. 4 is set.

【図6】浸漬式めっき装置の断面図である。FIG. 6 is a cross-sectional view of an immersion plating apparatus.

【図7】カップ式めっき装置の断面図である。FIG. 7 is a cross-sectional view of a cup type plating apparatus.

【図8】従来の外接型陰極接点の説明図である。FIG. 8 is an explanatory view of a conventional external contact type cathode contact.

【符号の説明】[Explanation of symbols]

1:ウェハ、2:レジスト、3,4:治具、5:シー
ル、6:レジスト剥離部、7:陰極接点、8:押付けレ
バー、10:めっき槽、11:陰極配線、12:陽極配
線、13:クランパ、14:ヒンジ、15:コンタクト
ピン、16:コンタクト受。
1: wafer, 2: resist, 3, 4: jig, 5: seal, 6: resist peeling portion, 7: cathode contact, 8: pressing lever, 10: plating tank, 11: cathode wiring, 12: anode wiring, 13: clamper, 14: hinge, 15: contact pin, 16: contact receiver.

─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───

【手続補正書】[Procedure amendment]

【提出日】平成4年9月25日[Submission date] September 25, 1992

【手続補正1】[Procedure Amendment 1]

【補正対象書類名】図面[Document name to be corrected] Drawing

【補正対象項目名】全図[Correction target item name] All drawings

【補正方法】変更[Correction method] Change

【補正内容】[Correction content]

【図1】 [Figure 1]

【図2】 [Fig. 2]

【図3】 [Figure 3]

【図4】 [Figure 4]

【図5】 [Figure 5]

【図6】 [Figure 6]

【図7】 [Figure 7]

【図8】 [Figure 8]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 辻村 学 東京都太田区羽田旭町11番1号 株式会社 荏原製作所内 (72)発明者 金山 拓也 東京都太田区羽田旭町11番1号 株式会社 荏原製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Manabu Tsujimura 11-11 Haneda Asahi-cho, Ota-ku, Tokyo Ebara Corporation (72) Inventor Takuya Kanayama 11-1 Haneda-asaka-cho, Ota-ku, Tokyo Inside the EBARA CORPORATION

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 めっき液中で半導体ウェハを電気めっき
するためのめっき用治具において、半導体ウェハをめっ
き液中に保持する部材に、半導体ウェハのめっき面以外
にめっき液が流入しないように半導体ウェハをシールす
るシール部材を設け、該シールされた半導体ウェハのめ
っき液と接触しない面に陰極接点を設けたことを特徴と
する半導体ウェハめっき用治具
1. In a plating jig for electroplating a semiconductor wafer in a plating solution, a semiconductor is provided so that the plating solution does not flow into a member for holding the semiconductor wafer in the plating solution except for the plating surface of the semiconductor wafer. A jig for semiconductor wafer plating, characterized in that a sealing member for sealing the wafer is provided, and a cathode contact is provided on a surface of the sealed semiconductor wafer that does not come into contact with the plating solution.
JP11659091A 1991-04-22 1991-04-22 Jig for plating semiconductor wafers Expired - Lifetime JP2704796B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11659091A JP2704796B2 (en) 1991-04-22 1991-04-22 Jig for plating semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11659091A JP2704796B2 (en) 1991-04-22 1991-04-22 Jig for plating semiconductor wafers

Publications (2)

Publication Number Publication Date
JPH06108285A true JPH06108285A (en) 1994-04-19
JP2704796B2 JP2704796B2 (en) 1998-01-26

Family

ID=14690908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11659091A Expired - Lifetime JP2704796B2 (en) 1991-04-22 1991-04-22 Jig for plating semiconductor wafers

Country Status (1)

Country Link
JP (1) JP2704796B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000059008A3 (en) * 1999-03-30 2001-02-15 Nutool Inc Method and apparatus for forming an electrical contact with a semiconductor substrate
US7022211B2 (en) 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
JP2007119923A (en) * 1998-11-28 2007-05-17 Acm Research Inc Method and apparatus for holding and positioning a semiconductor workpiece during electroplating and / or electropolishing of the semiconductor workpiece
US7427337B2 (en) 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
WO2013057802A1 (en) * 2011-10-19 2013-04-25 株式会社Jcu Substrate electroplating jig
KR20200034964A (en) 2017-07-25 2020-04-01 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
JP2020132946A (en) * 2019-02-20 2020-08-31 株式会社荏原製作所 Substrate holder and plating device including substrate holder
KR20210114956A (en) 2019-01-23 2021-09-24 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
KR20210114957A (en) 2019-01-23 2021-09-24 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
KR20210118084A (en) 2019-01-23 2021-09-29 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
JP2023122172A (en) * 2022-02-22 2023-09-01 有限会社クズハラゴム Partial plating jig
KR20240172057A (en) 2023-05-31 2024-12-09 우에무라 고교 가부시키가이샤 Workpiece holding jig
KR20240172058A (en) 2023-05-31 2024-12-09 우에무라 고교 가부시키가이샤 Workpiece holding jig

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092497A (en) * 1983-10-27 1985-05-24 Nec Corp Plating device
JPS62133100A (en) * 1985-12-03 1987-06-16 Nec Corp Metal plating apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6092497A (en) * 1983-10-27 1985-05-24 Nec Corp Plating device
JPS62133100A (en) * 1985-12-03 1987-06-16 Nec Corp Metal plating apparatus

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007119923A (en) * 1998-11-28 2007-05-17 Acm Research Inc Method and apparatus for holding and positioning a semiconductor workpiece during electroplating and / or electropolishing of the semiconductor workpiece
US7427337B2 (en) 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US6251235B1 (en) 1999-03-30 2001-06-26 Nutool, Inc. Apparatus for forming an electrical contact with a semiconductor substrate
US6958114B2 (en) 1999-03-30 2005-10-25 Asm Nutool, Inc. Method and apparatus for forming an electrical contact with a semiconductor substrate
US7309407B2 (en) 1999-03-30 2007-12-18 Novellus Systems, Inc. Method and apparatus for forming an electrical contact with a semiconductor substrate
WO2000059008A3 (en) * 1999-03-30 2001-02-15 Nutool Inc Method and apparatus for forming an electrical contact with a semiconductor substrate
US9714476B2 (en) 1999-05-18 2017-07-25 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US7833393B2 (en) 1999-05-18 2010-11-16 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US8075756B2 (en) 1999-05-18 2011-12-13 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US20120048727A1 (en) * 1999-05-18 2012-03-01 Junichiro Yoshioka Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US8961755B2 (en) 1999-05-18 2015-02-24 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US7022211B2 (en) 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
WO2013057802A1 (en) * 2011-10-19 2013-04-25 株式会社Jcu Substrate electroplating jig
JPWO2013057802A1 (en) * 2011-10-19 2015-04-02 株式会社Jcu Substrate plating jig
KR20200034964A (en) 2017-07-25 2020-04-01 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
KR20210114956A (en) 2019-01-23 2021-09-24 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
KR20210114957A (en) 2019-01-23 2021-09-24 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
KR20210118084A (en) 2019-01-23 2021-09-29 우에무라 고교 가부시키가이샤 Work holding jig and electroplating device
JP2020132946A (en) * 2019-02-20 2020-08-31 株式会社荏原製作所 Substrate holder and plating device including substrate holder
JP2023122172A (en) * 2022-02-22 2023-09-01 有限会社クズハラゴム Partial plating jig
KR20240172057A (en) 2023-05-31 2024-12-09 우에무라 고교 가부시키가이샤 Workpiece holding jig
KR20240172058A (en) 2023-05-31 2024-12-09 우에무라 고교 가부시키가이샤 Workpiece holding jig

Also Published As

Publication number Publication date
JP2704796B2 (en) 1998-01-26

Similar Documents

Publication Publication Date Title
JP2704796B2 (en) Jig for plating semiconductor wafers
JP4642229B2 (en) Apparatus and method for electrolytically depositing copper on a semiconductor work member
US4005472A (en) Method for gold plating of metallic layers on semiconductive devices
EP0107931B1 (en) Selective plating
US20040245107A1 (en) Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions
JP2001323397A (en) Thin film forming device and method for manufacturing its contact jig
TWI231019B (en) Lead frame and manufacturing method thereof and a semiconductor device
JP2003347368A (en) Tape structure and manufacturing method thereof
US3280382A (en) Semiconductor diode comprising caustic-resistant surface coating
JP3642748B2 (en) Plating equipment
JP2004218011A (en) Electrolytic plating apparatus
JP2549277B2 (en) Semiconductor device
JPS634945B2 (en)
JPS62196840A (en) Film carrier tape
KR900003874B1 (en) Leadframe
US10964553B2 (en) Manufacturing method of semiconductor device and semiconductor device
JPH1092830A (en) Method for manufacturing semiconductor device
KR200230850Y1 (en) Wheel for wafer plating apparatus
JPS62154658A (en) Manufacture of lead frame for semiconductor device
JP2926497B2 (en) Method for manufacturing semiconductor device
JP3304447B2 (en) Substrate for mounting electronic components
JPH10284668A (en) Lead frame for semiconductor device, surface treatment method thereof, and semiconductor device using this lead frame
US20060169751A1 (en) Method for depositing an adhesion-promoting layer on a metallic layer of a chip
JPS5828829A (en) Semiconductor wafer plating apparatus
JP2000091493A (en) Surface mount type semiconductor device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071009

Year of fee payment: 10

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081009

Year of fee payment: 11

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091009

Year of fee payment: 12

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101009

Year of fee payment: 13

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111009

Year of fee payment: 14

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111009

Year of fee payment: 14