JPH06132575A - Superconducting device - Google Patents
Superconducting deviceInfo
- Publication number
- JPH06132575A JPH06132575A JP4304873A JP30487392A JPH06132575A JP H06132575 A JPH06132575 A JP H06132575A JP 4304873 A JP4304873 A JP 4304873A JP 30487392 A JP30487392 A JP 30487392A JP H06132575 A JPH06132575 A JP H06132575A
- Authority
- JP
- Japan
- Prior art keywords
- orientation
- film
- superconducting
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002887 superconductor Substances 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 abstract description 15
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 229910004247 CaCu Inorganic materials 0.000 description 9
- 239000000126 substance Substances 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、マイクロ波ミキサ、
超電導トランジスタ等に用いられるトンネル型接合構造
の超電導デバイスに関する。BACKGROUND OF THE INVENTION This invention relates to a microwave mixer,
The present invention relates to a tunnel-type junction structure superconducting device used for a superconducting transistor or the like.
【０００２】[0002]
【従来の技術】近年、我が国における超電導エレクトロ
ニクスの進歩は目覚ましく、これに伴って転移温度Ｔｃ
の高いビスマス（Ｂｉ）系酸化物超電導物質やイットリ
ウム（Ｙ）系酸化物超電導物質が提案されている。2. Description of the Related Art In recent years, the progress of superconducting electronics in Japan has been remarkable and the transition temperature Tc has been increased accordingly.
A high bismuth (Bi) -based oxide superconducting substance and a yttrium (Y) -based oxide superconducting substance have been proposed.
【０００３】ところで、上記酸化物超電導物質を用いて
超電導デバイスを作成する場合には、例えば、一定の作
動電圧を有し回路動作の安定性に優れたトンネル型接合
が用いられる。このトンネル型接合は、ＳＩＳ又はＳＩ
Ｎ（ここで、Ｓは超電導薄膜、Ｉは絶縁層、Ｎは常電導
体）からなる積層構造となっている。By the way, when a superconducting device is produced by using the above oxide superconducting substance, for example, a tunnel junction having a constant operating voltage and excellent stability in circuit operation is used. This tunnel type junction is SIS or SI
It has a laminated structure composed of N (here, S is a superconducting thin film, I is an insulating layer, and N is a normal conductor).
【０００４】ところで、Ｂｉ系酸化物超電導体（Ｂｉ2
Ｓｒ2ＣａＣｕ2Ｏｘ，Ｂｉ2Ｓｒ2Ｃａ2Ｃｕ3Ｏｘ，ｅｔ
ｃ…）は、超電導性を有するＣｕＯ2面が層状に積み重
なった結晶構造となっている。この結果、この材料の電
気伝導特性は、Ｃｕ2Ｏ面（ａ−ｂ面）に平行か垂直に
よって大きく異なる。By the way, Bi-based oxide superconductors (Bi 2
Sr 2 CaCu 2 Ox, Bi 2 Sr 2 Ca 2 Cu 3 Ox, et
c) has a crystal structure in which CuO 2 planes having superconductivity are stacked in layers. As a result, the electrical conductivity characteristics of this material differ greatly depending on whether it is parallel to or perpendicular to the Cu 2 O plane (ab plane).
【０００５】このＢｉ系酸化物超電導体を、安定で劈開
が容易なａ−ｂ面において使用する場合、一般にその表
面には超電導性の劣るＢｉ−Ｏ層が現れることが知られ
ている。このため、この材料の持つ超電導特性を積極的
に利用するために、材料のａ−ｂ面と垂直な断面方向を
利用した超電導デバイスが提案されている。When this Bi-based oxide superconductor is used on the ab plane which is stable and easily cleaved, it is generally known that a Bi-O layer having poor superconductivity appears on the surface. Therefore, in order to positively utilize the superconducting property of this material, a superconducting device utilizing a cross-sectional direction perpendicular to the ab plane of the material has been proposed.
【０００６】特に、超電導ベーストランジスタにこの材
料を応用する場合、ベース層の内部を伝導する電子はａ
−ｂ面と平行な方向、すなわち、ＣｕＯ2面に沿って伝
導することが望ましい。従来の素子においては、この条
件を満たすために、作製が比較的容易なｃ軸配向膜上に
適当なエッチングプロセスを用いて作製した断面を利用
している。In particular, when this material is applied to a superconducting base transistor, the electrons conducted inside the base layer are a
It is desirable to conduct in a direction parallel to the −b plane, that is, along the CuO 2 plane. In order to satisfy this condition, a conventional element uses a cross section produced by an appropriate etching process on a c-axis oriented film which is relatively easy to produce.
【０００７】[0007]
【発明が解決しようとする課題】しかし、この方法で
は、基板の水平方向にエミッタ、ベース、コレクタを形
成するため素子１個あたりの面積が大きくなり、しかも
ベースの水平方向の長さを０．１μｍ程度まで短くする
必要があるので、実際の素子作製において極めて困難で
ある等の問題があった。However, according to this method, since the emitter, the base and the collector are formed in the horizontal direction of the substrate, the area per element is large, and the horizontal length of the base is 0. Since it is necessary to reduce the length to about 1 μm, there is a problem that it is extremely difficult in actual device fabrication.
【０００８】この発明は、上述した従来の問題点を解消
するためになされたものにして、準粒子の注入特性を改
善すると共に作製が容易にして、且つ素子の集積度を向
上させることが可能な超電導デバイスを提供することを
その目的とする。The present invention has been made to solve the above-mentioned conventional problems, and it is possible to improve the injection characteristics of quasi-particles, facilitate the fabrication, and improve the degree of integration of elements. The purpose of the present invention is to provide a superconducting device.
【０００９】[0009]
【課題を解決するための手段】この発明は、基板上に
（１１ｎ）（ここで、ｎ＝０，１，２，…）配向させた
層状構造酸化物超電導体を設け、この（１１ｎ）配向面
上に絶縁層を介して超電導体または常電導体を設けてな
る超電導体デバイス。The present invention provides a (11n) (where n = 0, 1, 2, ...) Oriented layered structure oxide superconductor on a substrate, and the (11n) orientation is provided. A superconductor device in which a superconductor or a normal conductor is provided on the surface via an insulating layer.
【００１０】[0010]
【作用】基板上に（１１ｎ）配向させた層状構造酸化物
超電導体を設けることで、超電導特性を有する層が厚さ
方向にも伸びるので、注入された電子は超電導特性を有
する層に沿って厚さ方向に伝導する。このため、ｃ軸配
向膜を使用してｃ軸方向に電子を注入する場合に比べ
て、素子特性が大きく改善される。By providing the (11n) -oriented layered structure oxide superconductor on the substrate, the layer having the superconducting property extends in the thickness direction as well. Conducts in the thickness direction. Therefore, the device characteristics are greatly improved as compared with the case where electrons are injected in the c-axis direction using the c-axis alignment film.
【００１１】更に、この発明によれば、基板に対して垂
直方向にエミッタ、ベース、コレクタを形成することが
可能となる。Further, according to the present invention, it becomes possible to form the emitter, the base and the collector in the direction perpendicular to the substrate.
【００１２】また、基板として半導体材料を用い、この
上この発明による超電導ベース層を形成した上にエミッ
タとなるトンネル接合を形成するだけでトランジスタ構
造とすることができ、素子作製プロセスを大幅に短縮で
きる。Further, a transistor structure can be obtained by using a semiconductor material as a substrate, and further forming a tunnel junction serving as an emitter on the superconducting base layer according to the present invention. it can.
【００１３】[0013]
【実施例】以下、この発明の実施例を図面を参照して説
明する。この実施例は、層状酸化物超電導体として、Ｂ
ｉ2Ｓｒ2ＣａＣｕ2Ｏｘ，Ｂｉ2Ｓｒ2Ｃａ2Ｃｕ3Ｏｘの
（１１ｎ）（ｎ＝０，１，２…）配向膜を用いた。Embodiments of the present invention will be described below with reference to the drawings. In this example, as a layered oxide superconductor, B
i 2 Sr 2 CaCu 2 Ox, with Bi 2 Sr 2 Ca 2 Cu 3 Ox of (11n) (n = 0,1,2 ... ) oriented film.
【００１４】コレクタ層としてＮｂを０．０２〜０．０
５ｗｔ％ドープしたＳｒＴｉＯ3（以下、ＳＴＯとい
う。）（１１０）基板１を用いる。このＳＴＯ基板１の
（１１０）面上にＲＦマグネトロンスパッタリング法に
よりベース層となるＢｉ系超電導薄膜２を形成する。タ
ーゲットとしてＢｉ2Ｓｒ2Ｃａ2Ｃｕ3Ｏｘ焼結体シング
ルターゲットを使用し、基板温度を６６０℃に設定して
スパッタガスとして１００％酸素（Ｏ2）を３００ｍＴ
ｏｒｒ流して、スパッタリングすることにより、Ｂｉ2
Ｓｒ2ＣａＣｕ2Ｏｘの（１１７）配向薄膜又はＢｉ2Ｓ
ｒ2ＣａＣｕ2Ｏｘ／Ｂｉ2Ｓｒ2Ｃａ2Ｃｕ3Ｏｘの（１１
８）配向薄膜が得られる。この超電導薄膜の転移温度は
４５Ｋである。Nb of 0.02 to 0.0 is used as a collector layer.
A 5 wt% doped SrTiO 3 (hereinafter referred to as STO) (110) substrate 1 is used. On the (110) surface of this STO substrate 1, a Bi-based superconducting thin film 2 to be a base layer is formed by the RF magnetron sputtering method. A Bi 2 Sr 2 Ca 2 Cu 3 Ox sintered single target was used as a target, the substrate temperature was set to 660 ° C., and 100% oxygen (O 2 ) was 300 mT as a sputtering gas.
Or 2 is flowed and sputtered to produce Bi 2
(117) oriented thin film of Sr 2 CaCu 2 Ox or Bi 2 S
r 2 CaCu 2 Ox / Bi 2 Sr 2 Ca 2 Cu 3 Ox (11
8) An oriented thin film is obtained. The transition temperature of this superconducting thin film is 45K.
【００１５】図４にＳＴＯ（１１０）基板１と、この基
板１上に形成されるＢｉ2Ｓｒ2ＣａＣｕ2Ｏｘ，Ｂｉ2Ｓ
ｒ2Ｃａ2Ｃｕ3Ｏｘ等のＢｉ系酸化物超電導等薄膜との
配向の関係を示す。更に、図３にＢｉ2Ｓｒ2ＣａＣｕ2
Ｏｘ（１１７）配向膜のＣｕＯ2面の位置関係を示す。
また、図２は（１１７）面の配向面の各軸に対する位置
関係を示す。FIG. 4 shows an STO (110) substrate 1 and Bi 2 Sr 2 CaCu 2 Ox and Bi 2 S formed on the substrate 1.
The relationship of orientation with a thin film such as a Bi-based oxide superconductor such as r 2 Ca 2 Cu 3 Ox is shown. Further, in FIG. 3, Bi 2 Sr 2 CaCu 2
The positional relationship of the CuO 2 surface of the Ox (117) orientation film is shown.
Further, FIG. 2 shows the positional relationship of the (117) plane orientation plane with respect to each axis.
【００１６】図３において、点線が超電導特性を有する
ＣｕＯ2面の方向を表わす。そして、この実施例におい
ては、（１１７）面が基板１の表面と平行に成長する。
従って、ベース層を形成する超電導体特性を有するＣｕ
Ｏ2面がベースの厚さ方向に伴びて成長する。図３およ
び図４に示すようにＣｕＯ2面が基板１表面と平行な面
に現れる。In FIG. 3, the dotted line represents the direction of the CuO 2 plane having superconducting properties. Then, in this embodiment, the (117) plane grows parallel to the surface of the substrate 1.
Therefore, Cu having superconducting properties forming the base layer
The O 2 surface grows along with the thickness direction of the base. As shown in FIGS. 3 and 4, the CuO 2 surface appears on a surface parallel to the surface of the substrate 1.
【００１７】上記Ｂｉ系酸化物超電導薄膜２上にＭｇＯ
等の絶縁膜３をスパッタリング法により形成する。そし
て、絶縁膜３上にＡｕからなるエミッタ電極４、及びＢ
ｉ系超電導薄膜２上に同じくＡｕからなるベース電極３
を夫々設けることにより、基板１に対して、垂直方向に
エミッタ、ベース、コレクタを形成した。超電導ベース
トランジスタが得られる。MgO is formed on the Bi-based oxide superconducting thin film 2.
The insulating film 3 such as is formed by the sputtering method. Then, the emitter electrode 4 made of Au and B on the insulating film 3
Base electrode 3 also made of Au on i-type superconducting thin film 2
By forming each of these, an emitter, a base and a collector were formed in the vertical direction with respect to the substrate 1. A superconducting base transistor is obtained.
【００１８】前述したようにベース層を形成する超電導
体のＣｕＯ2面がベースの厚さ方向にも伸びているの
で、ベースに注入された電子はＣｕＯ2面に沿って伝導
することができる。このためｃ軸配向膜を使用してｃ軸
方向に電子を注入する場合に比べて、素子特性を大きく
改善することができる。Since the CuO 2 surface of the superconductor forming the base layer extends in the thickness direction of the base as described above, the electrons injected into the base can be conducted along the CuO 2 surface. Therefore, the device characteristics can be greatly improved as compared with the case where electrons are injected in the c-axis direction using the c-axis alignment film.
【００１９】また、ｃ軸配向膜を使用する場合と異な
り、基板１に対して垂直方法にエミッタ、ベース、コレ
クタを形成することができる。従って、基板に対して水
平方向に素子を形成した場合に比べて素子１個当たりの
面積を大幅に小さくでき、高集積化に有利である。Further, unlike the case where the c-axis alignment film is used, the emitter, the base and the collector can be formed in a method vertical to the substrate 1. Therefore, the area per element can be significantly reduced as compared with the case where elements are formed in the horizontal direction on the substrate, which is advantageous for high integration.
【００２０】特に、（１１ｎ）配向膜を用いた事によ
り、コレクタ層として酸化物導電性基板としてＮｂドー
プのＳｒＴｉＯ3の（１１０）面を使用して、この上に
超電導ベース層を極めて容易に形成できる。さらに、こ
の上にエミッタとなるトンネル接合を形成するだけでト
ランジスタ構造とすることができ、基板に対して水平方
向に素子を形成した場合に比べて素子作製プロセスを大
幅に短縮することができる。In particular, since the (11n) oriented film is used, the superconducting base layer is very easily formed on the (110) face of Nb-doped SrTiO 3 as the oxide conductive substrate as the collector layer. it can. Furthermore, a transistor structure can be formed by simply forming a tunnel junction serving as an emitter on this, and the element manufacturing process can be significantly shortened as compared with the case where the element is formed in the horizontal direction with respect to the substrate.
【００２１】[0021]
【発明の効果】以上説明したように、この発明によれ
ば、基板上に（１１ｎ）配向させた層状構造酸化物超電
導体を設けることで、超電導特性を有する層が厚さ方向
にも伸びるので、注入された電子は超電導特性を有する
層に沿って厚さ方向に伝導する。このため、ｃ軸配向膜
を使用してｃ軸方向に電子を注入する場合に比べて、素
子特性が大きく改善される。As described above, according to the present invention, by providing the (11n) -oriented layered structure oxide superconductor on the substrate, the layer having superconducting properties can be extended in the thickness direction. The injected electrons are conducted in the thickness direction along the layer having superconducting properties. Therefore, the device characteristics are greatly improved as compared with the case where electrons are injected in the c-axis direction using the c-axis alignment film.
【００２１】更に、この発明によれば、基板に対して垂
直方向にエミッタ、ベース、コレクタを形成することが
可能となる。Further, according to the present invention, it becomes possible to form the emitter, the base and the collector in the direction perpendicular to the substrate.
【図１】この発明にかかる超電導デバイスの一実施例を
示す斜視図である。FIG. 1 is a perspective view showing an embodiment of a superconducting device according to the present invention.
【図２】この発明の層状構造酸化物超電導体の配向面を
説明するための模式図である。FIG. 2 is a schematic diagram for explaining an oriented surface of a layered structure oxide superconductor of the present invention.
【図３】この発明のＢｉ2Ｓｒ2ＣａＣｕ2Ｏｘ（１１
７）配向のＣｕＯ2面の位置関係を示す模式図である。FIG. 3 shows the Bi 2 Sr 2 CaCu 2 Ox (11 of the present invention
7) A schematic view showing the positional relationship of oriented CuO 2 planes.
【図４】ＳＴＯ（１１０）基板１に形成されるＢｉ2Ｓ
ｒ2ＣａＣｕ2Ｏｘ，Ｂｉ2Ｓｒ2Ｃａ2Ｃｕ3Ｏｘ等のＢｉ
系酸化物超電導等薄膜との配向の関係を示す模式図であ
る。FIG. 4 Bi 2 S formed on STO (110) substrate 1
Bi such as r 2 CaCu 2 Ox and Bi 2 Sr 2 Ca 2 Cu 3 Ox
It is a schematic diagram which shows the relationship of orientation with a thin film, such as a system oxide superconductivity.
１ ＳＴＯ（１１０）基板 ２ Ｂｉ2Ｓｒ2ＣａＣｕ2Ｏｘ（１１７）（ベース層） ３ 絶縁膜 ４ エミッタ電極1 STO (110) substrate 2 Bi 2 Sr 2 CaCu 2 Ox (117) (base layer) 3 insulating film 4 emitter electrode
Claims (1)
１，２，…）配向させた層状構造酸化物超電導体を設
け、この（１１ｎ）配向面上に絶縁層を介して超電導体
または常電導体を設けてなる超電導体デバイス。1. (11n) on a substrate (where n = 0,
1, 2, ...) Oriented layered structure oxide superconductor is provided, and a superconductor device or a normal conductor is provided on the (11n) oriented surface via an insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4304873A JPH06132575A (en) | 1992-10-16 | 1992-10-16 | Superconducting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4304873A JPH06132575A (en) | 1992-10-16 | 1992-10-16 | Superconducting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06132575A true JPH06132575A (en) | 1994-05-13 |
Family
ID=17938309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4304873A Pending JPH06132575A (en) | 1992-10-16 | 1992-10-16 | Superconducting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06132575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016222467A (en) * | 2015-05-27 | 2016-12-28 | 国立研究開発法人物質・材料研究機構 | Bi oxide superconducting thin film manufacturing method and Bi oxide superconducting thin film structure |
-
1992
- 1992-10-16 JP JP4304873A patent/JPH06132575A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016222467A (en) * | 2015-05-27 | 2016-12-28 | 国立研究開発法人物質・材料研究機構 | Bi oxide superconducting thin film manufacturing method and Bi oxide superconducting thin film structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910007901B1 (en) | Super conductor device | |
| CN1022654C (en) | Tunnel type Josephson device and manufacturing method thereof | |
| US5250506A (en) | Superconductive switching element with semiconductor channel | |
| JPH0714079B2 (en) | Oxide superconducting three-terminal device | |
| JPH06132575A (en) | Superconducting device | |
| US5468723A (en) | Method for forming a superconducting weak link device | |
| JP2651480B2 (en) | Superconducting element | |
| JPH02391A (en) | superconducting field effect transistor | |
| JP2515947B2 (en) | Superconducting element | |
| JP3282748B2 (en) | Superconducting base transistor | |
| JP2544390B2 (en) | Oxide superconducting integrated circuit | |
| JP2868286B2 (en) | Superconducting element and circuit element having the same | |
| JP2768276B2 (en) | Oxide superconducting junction element | |
| JP3021720B2 (en) | Superconducting transistor | |
| JP2654567B2 (en) | Operation method of superconducting element | |
| JP2559413B2 (en) | Oxide superconducting integrated circuit | |
| JP2950958B2 (en) | Superconducting element manufacturing method | |
| JP2691065B2 (en) | Superconducting element and fabrication method | |
| JPH05327047A (en) | Josephson device and manufacturing method thereof | |
| JPH0634420B2 (en) | Method for manufacturing oxide superconducting transistor device | |
| JPH0587192B2 (en) | ||
| JPH04288885A (en) | Tunnel-type josephson element | |
| JPH0636440B2 (en) | Superconducting switching element | |
| JPH02273974A (en) | Superconducting three-terminal device | |
| JPH0580160B2 (en) |