JPH06140332A - Algaas film formation method - Google Patents
Algaas film formation methodInfo
- Publication number
- JPH06140332A JPH06140332A JP30811192A JP30811192A JPH06140332A JP H06140332 A JPH06140332 A JP H06140332A JP 30811192 A JP30811192 A JP 30811192A JP 30811192 A JP30811192 A JP 30811192A JP H06140332 A JPH06140332 A JP H06140332A
- Authority
- JP
- Japan
- Prior art keywords
- film
- algaas
- inp
- grown
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 12
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 36
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＩｎＰ（燐化インジウ
ム）上にＡｌＧａＡｓ（砒化アルミニウムガリウム混
晶）膜を積層した構造を少なくとも有する半導体デバイ
スの製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device having at least a structure in which an AlGaAs (aluminum gallium arsenide mixed crystal) film is laminated on InP (indium phosphide).
【０００２】[0002]
【従来の技術】ＩｎＰ上にＡｌＧａＡｓ膜を形成するこ
とは、ＡｌＧａＡｓを絶縁膜とするＩｎＰのＭＩＳ（金
属−絶縁体−半導体，ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ
−ｓｅｍｉｃｏｎｄｕｃｔｏｒ）型電界効果トランジス
ター構造の製造において行われている。例えば、Ｔ．Ｉ
ｔｏらは、アイ・イー・ディー・エム テクニカルダイ
ジェスト（ＩＥＤＭ ８６ Ｔｅｃｈ． Ｄｉｇ．）７
７１頁（１９８６年）において、ＭＢＥ法（分子線エピ
タキシー法）で成長したＡｌＧａＡｓ膜を用いてＩｎＰ
のＭＩＳ型電界効果トランジスターの電気特性を報告し
ている。2. Description of the Related Art The formation of an AlGaAs film on InP is performed by MIS (metal-insulator-semiconductor, metal-insulator) of InP using AlGaAs as an insulating film.
-Semiconductor type field effect transistor structure. For example, T. I
to et al. 7 IEDM Technical Digest (IEDM 86 Tech. Dig.)
71 (1986), InP using an AlGaAs film grown by the MBE method (molecular beam epitaxy method).
Report the electrical characteristics of the MIS field effect transistor.
【０００３】またＩｎＰ上でのＡｌＧａＡｓ膜形成は、
光・電子融合デバイスの作製を目的として、Ｓｉ等のＩ
Ｖ族元素半導体をＩｎＰ基板上に成長させる場合にも、
重要である。すなわち、絶縁性のＡｌＧａＡｓ膜を介在
させることにより、ＳｉとＩｎＰの格子不整合の影響を
緩和しつつ、ＩｎＰ基板上に良好にＩＶ族元素半導体膜
を形成させることが可能である。The AlGaAs film formation on InP is
I, such as Si, for the purpose of manufacturing optical / electronic fusion devices
When growing a Group V element semiconductor on an InP substrate,
is important. That is, by interposing the insulating AlGaAs film, the group IV element semiconductor film can be satisfactorily formed on the InP substrate while alleviating the influence of the lattice mismatch between Si and InP.
【０００４】[0004]
【発明が解決しようとする課題】ＡｌＧａＡｓを絶縁膜
として用いるためには、膜自体の抵抗は高く、またＡｌ
ＧａＡｓ／ＩｎＰの接合リークは小さいことが望まれ
る。In order to use AlGaAs as an insulating film, the resistance of the film itself is high, and Al
It is desired that the junction leak of GaAs / InP is small.
【０００５】本発明の目的は、絶縁膜として、より高い
性能を持つＡｌＧａＡｓ膜をＩｎＰ上に形成する方法を
提供することにある。An object of the present invention is to provide a method for forming an AlGaAs film having higher performance on InP as an insulating film.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係るＡｌＧａＡｓ膜形成方法は、熱処理工
程を有し、ＩｎＰ上にＡｌＧａＡｓ膜を形成するＡｌＧ
ａＡｓ膜形成方法であって、熱処理工程は、表面自然酸
化膜を除去したＩｎＰ（燐化インジウム）上に、およそ
２００℃でＭＢＥ（分子線エピタキシー）法により成長
させたＡｌx Ｇａ1- x Ａｓ（砒化アルミニウムガリウム
混晶，０≦ｘ≦１）層を、およそ５００℃以上７００℃
以下の温度において、砒素圧を加えながら熱処理する工
程であるものである。In order to achieve the above object, an AlGaAs film forming method according to the present invention has a heat treatment step and forms an AlGaAs film on InP.
In the aAs film forming method, the heat treatment step is performed by growing Al x Ga 1- x As on InP (indium phosphide) from which the surface natural oxide film is removed at about 200 ° C. by MBE (molecular beam epitaxy) method. (Aluminum gallium arsenide mixed crystal, 0 ≦ x ≦ 1) layer, about 500 ° C. or more and 700 ° C.
This is a step of performing heat treatment while applying arsenic pressure at the following temperature.
【０００７】また、前記ＡｌＧａＡｓ膜形成方法であっ
て、およそ２００℃で成長させるＡｌＧａＡｓ層の膜厚
を１０ｎｍ（ナノメートル）以上とするものである。Further, in the above AlGaAs film forming method, the film thickness of the AlGaAs layer grown at approximately 200 ° C. is set to 10 nm (nanometers) or more.
【０００８】[0008]
【作用】およそ２００℃という低温条件におけるＩｎＰ
上へのＭＢＥ成長では、ＡｌＧａＡｓは、基板との格子
不整合のため３次元成長し、また過剰の砒素が膜中に混
入する。これをおよそ５００℃以上７００℃以下の温度
において砒素圧を加えながら熱処理すると、ＡｌＧａＡ
ｓ膜中に砒素析出物が形成されるとともに、ＡｌＧａＡ
ｓ膜は平坦になる。この上には通常の成長温度（５００
〜６５０℃）でＡｌＧａＡｓを２次元成長させることが
できる。最初から通常の成長温度でＡｌＧａＡｓをＭＢ
Ｅ成長させた場合、成長モードが３次元成長から２次元
成長に変わり、膜表面が平坦になるのは、膜厚が４０ｎ
ｍ以上になってからである。これに較べ、請求項１の方
法では１０ｎｍの膜厚でも平坦な膜が得られる。すなわ
ち、基板との格子不整合によって発生する欠陥を多く含
む層の厚さを減少させることができる。この起源には、
膜に含まれる過剰砒素が関与していると推測される。[Operation] InP under a low temperature condition of about 200 ° C
In the upward MBE growth, AlGaAs grows three-dimensionally due to lattice mismatch with the substrate, and excess arsenic is mixed in the film. When this is heat-treated at a temperature of approximately 500 ° C. or higher and 700 ° C. or lower while applying arsenic pressure, AlGaA
arsenic precipitates are formed in the s-film and AlGaA
The s film becomes flat. Above this is the normal growth temperature (500
AlGaAs can be two-dimensionally grown at ˜650 ° C.). MB from the beginning at normal growth temperature
When E-grown, the growth mode changes from three-dimensional growth to two-dimensional growth and the film surface becomes flat when the film thickness is 40 n.
Only after m or more. On the other hand, according to the method of claim 1, a flat film can be obtained even with a film thickness of 10 nm. That is, it is possible to reduce the thickness of a layer containing many defects caused by lattice mismatch with the substrate. In this origin,
It is speculated that the excess arsenic contained in the film is involved.
【０００９】同時に低温成長後、砒素圧下で熱処理した
ＡｌＧａＡｓ膜は、砒素析出物の作用により通常のＭＢ
Ｅ成長膜に較べて、数桁抵抗が高くなる。同様の効果
は、ＧａＡｓ基板上に低温成長したＡｌＧａＡｓ膜につ
いて、すでに報告されている（例えば、スミス（Ｆ．
Ｗ．Ｓｍｉｔｈ）ら、アイ・イー・イー・イー エレク
トロン デバイス レターズ（ＩＥＥＥ Ｅｌｅｃｔｒ
ｏｎ Ｄｅｖｉｃｅ Ｌｅｔｔｅｒｓ）第９巻７７頁
（１９８８年））、すなわち、欠陥層厚の減少と膜自体
の高抵抗化によって、ＩｎＰ上に絶縁膜として高い性能
を持つＡｌＧａＡｓ膜を形成することが可能になる。At the same time, the AlGaAs film, which has been grown at a low temperature and then heat-treated under arsenic pressure, has a normal MB due to the action of arsenic precipitates.
The resistance is several orders of magnitude higher than that of the E-grown film. Similar effects have already been reported for AlGaAs films grown at low temperatures on GaAs substrates (eg Smith (F.
W. Smith, et al., EEE Electron Device Letters (IEEE Electr)
on Device Letters, Vol. 9, p. 77 (1988)), that is, it is possible to form an AlGaAs film having high performance as an insulating film on InP by reducing the thickness of the defect layer and increasing the resistance of the film itself. Become.
【００１０】また、請求項２のように、およそ２００℃
で成長するＡｌＧａＡｓ層の厚さを１０ｎｍ以上とすれ
ば、ＡｌＧａＡｓ／ＩｎＰ接合の電気特性の再現性を確
保することができる。これは、砒素圧下熱処理によって
膜中に形成される砒素析出物の径（およそ６ｎｍ）より
膜厚を大きく設定したことによるものである。Further, as in claim 2, about 200 ° C.
If the thickness of the AlGaAs layer grown in 1. is 10 nm or more, the reproducibility of the electrical characteristics of the AlGaAs / InP junction can be secured. This is because the film thickness was set to be larger than the diameter (about 6 nm) of the arsenic precipitate formed in the film by the arsenic pressure reduction heat treatment.
【００１１】[0011]
【実施例】以下、本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.
【００１２】（実施例１）第１の実施例では、イオンポ
ンプで排気するＭＢＥ装置を用いて、ＩｎＰの表面酸化
膜除去とＡｌＧａＡｓ成長とを連続して行なう。化学的
エッチングを行なったＩｎＰ（１００）基板（ｎ型，キ
ャリア濃度２×１０17ｃｍ-3）を、ＭＢＥ装置内に導入
後、Ａｓ4 分子線（フラックス強度２×１０-5Ｔｏｒ
ｒ）照射下で５００℃まで加熱する。これにより、基板
の表面酸化膜は除去され、ＲＨＥＥＤ（反射高エネルギ
ー電子線回折）では、２×１超構造が観察される。基板
温度を下げ、２００℃でＡｓ4 分子線に加えてＧａ分子
線を照射し、ＧａＡｓを成長速度０．８μｍ／時で所望
の厚さまで成長させる。(Embodiment 1) In the first embodiment, the removal of the InP surface oxide film and the growth of AlGaAs are continuously carried out by using an MBE apparatus which evacuates with an ion pump. After introducing the chemically etched InP (100) substrate (n type, carrier concentration 2 × 10 17 cm −3 ) into the MBE apparatus, As 4 molecular beam (flux intensity 2 × 10 −5 Tor) was introduced.
r) Heat to 500 ° C. under irradiation. As a result, the surface oxide film on the substrate is removed, and a 2 × 1 superstructure is observed by RHEED (reflection high energy electron diffraction). The substrate temperature is lowered, and Ga molecular beam is irradiated at 200 ° C. in addition to As 4 molecular beam to grow GaAs to a desired thickness at a growth rate of 0.8 μm / hour.
【００１３】ＡｌＧａＡｓを成長させる場合には、組成
比ｘに応じたフラックス強度のＧａ分子線とＡｌ分子線
とを供給する。このとき膜は３次元成長しており、ＲＨ
ＥＥＤパターンはスポッティである。その後、Ａｓ4 分
子線照射は継続したまま基板を６００℃まで昇温し、こ
の温度で２０分保持する。これにより膜が平坦になるこ
とは、ＲＨＥＥＤパターンが清浄ＧａＡｓ面と同じ２×
４構造になることから確認できる。作製したＡｌＧａＡ
ｓ／ＩｎＰ上には、Ａｌを蒸着、パターニングし、ゲー
ト電極を形成してＭＩＳ構造とする。When AlGaAs is grown, Ga molecular beam and Al molecular beam having a flux intensity corresponding to the composition ratio x are supplied. At this time, the film is three-dimensionally grown, and RH
The EED pattern is spotty. After that, the substrate is heated to 600 ° C. while continuing the As 4 molecular beam irradiation, and kept at this temperature for 20 minutes. As a result, the film becomes flat because the RHEED pattern is the same as that of the clean GaAs surface.
It can be confirmed from the fact that it has four structures. Produced AlGaA
Al is vapor-deposited and patterned on s / InP to form a gate electrode to form a MIS structure.
【００１４】膜厚１００ｎｍのＧａＡｓ，Ａｌ0.3 Ｇａ
0.7 Ａｓを本方法でＩｎＰ上に成長させた場合、バイア
ス電圧０．５Ｖ印加時の順方向電流は、ＧａＡｓで１×
１０-3Ａ／ｃｍ2 、Ａｌ0.3 Ｇａ0.7 Ａｓで１×１０-7
Ａ／ｃｍ2 となり、５００℃で従来の方法により形成し
た試料に較べてそれぞれ４桁以上減少できる。同様の効
果は、他の膜厚においても認められるが、低温ＡｌＧａ
Ａｓ膜厚を減少させすぎると、得られなくなることがあ
る。これは、成長温度が低い時に顕著であり、１９０℃
で膜厚５ｎｍのＧａＡｓを成長させたＧａＡｓ／ＩｎＰ
接合の順方向電流は、通常成長の場合と同等になる。低
温で成長する膜の厚さを１０ｎｍ以上とすることによ
り、この再現性不良は認められなくなる。100 nm thick GaAs, Al 0.3 Ga
When 0.7 As is grown on InP by this method, the forward current when a bias voltage of 0.5 V is applied is 1 × for GaAs.
10 −3 A / cm 2 , Al 0.3 Ga 0.7 As, 1 × 10 −7
A / cm 2 , which can be reduced by at least 4 digits compared to the sample formed by the conventional method at 500 ° C. Similar effects are observed at other film thicknesses, but low temperature AlGa
If the As film thickness is reduced too much, it may not be obtained. This is remarkable when the growth temperature is low, 190 ° C
GaAs / InP grown 5nm thick GaAs
The forward current of the junction is comparable to that of normal growth. By setting the thickness of the film grown at a low temperature to 10 nm or more, this reproducibility defect is not recognized.
【００１５】（実施例２）第２の実施例では、第１の実
施例で用いたＡｌＧａＡｓ用ＭＢＥ装置と、これに真空
接続したＳｉ用ＭＢＥ装置とを用い、ＩｎＰ基板上に本
方法で形成したＡｌＧａＡｓを介してＳｉ膜を形成す
る。第１の実施例と同様にして、厚さ１０ｎｍのＡｌＧ
ａＡｓ層をＩｎＰ（１００）基板上に２００℃で成長さ
せたのち、Ａｓ4 ビーム照射下において６００℃で２０
分熱処理する。冷却後、ＡｌＧａＡｓ用ＭＢＥ装置から
Ｓｉ用ＭＢＥ装置に基板を移す。５００℃まで昇温し、
ＡｌＧａＡｓ表面の過剰砒素を脱離させたのち、基板温
度４５０℃で電子銃加熱法により発生させたＳｉ分子線
を照射し、Ｓｉ層を４０ｎｍ／時の速度で成長させる。(Embodiment 2) In the second embodiment, the AlGaAs MBE device used in the first embodiment and the Si MBE device vacuum-connected to the AlE MBE device are used to form on the InP substrate by this method. A Si film is formed through the AlGaAs formed. Similar to the first embodiment, AlG having a thickness of 10 nm is used.
After growing an aAs layer on an InP (100) substrate at 200 ° C., it is irradiated with As 4 beam at 600 ° C. for 20 ° C.
Heat treatment for minutes. After cooling, the substrate is transferred from the AlGaAs MBE device to the Si MBE device. Raise the temperature to 500 ° C,
After desorbing excess arsenic on the surface of AlGaAs, a Si molecular beam generated by an electron gun heating method is irradiated at a substrate temperature of 450 ° C. to grow a Si layer at a rate of 40 nm / hour.
【００１６】このとき、Ｓｉ表面は、ホモエピタキシャ
ル成長時と同じダブルドメインの２×１超構造を示す。
すなわち、Ｓｉは２次元成長し、表面は平坦である。従
来法でＳｉが２次元成長するためには、４０ｎｍ以上の
厚さのＡｌＧａＡｓが必要であるが、本方法では、１０
ｎｍのＡｌＧａＡｓでも、良好なＳｉ膜の成長が可能と
なる。At this time, the Si surface shows the same double domain 2 × 1 superstructure as in the homoepitaxial growth.
That is, Si grows two-dimensionally and the surface is flat. AlGaAs with a thickness of 40 nm or more is required for two-dimensional growth of Si by the conventional method.
Even with AlGaAs having a thickness of nm, a good Si film can be grown.
【００１７】ＡｌＧａＡｓ層には、同時に、下地ＩｎＰ
と上部Ｓｉ層の電気的分離の役割を担わせることができ
るが、本方法では、すでに述べたようにＡｌＧａＡｓ膜
自体の抵抗が従来法より数桁高くなり、ＩｎＰとＳｉの
電気的分離が向上する。At the same time, the underlying InP is formed on the AlGaAs layer.
However, in this method, the resistance of the AlGaAs film itself is several orders of magnitude higher than that of the conventional method, and the electrical separation of InP and Si is improved. To do.
【００１８】以上の実施例では、ＡｌＧａＡｓの成長を
Ａｓ4 を用いたＭＢＥ法で行なったが、類似の方法、例
えば、ＡｓＨ3 を熱分解して得られるＡｓ2 を用いたガ
スソースＭＢＥ法等においても、本発明は有効である。In the above embodiment, AlGaAs was grown by the MBE method using As 4 , but a similar method, for example, a gas source MBE method using As 2 obtained by thermally decomposing AsH 3 is used. Also in this, the present invention is effective.
【００１９】[0019]
【発明の効果】以上説明したように本発明によれば、絶
縁膜として、より高い性能を持つＡｌＧａＡｓ膜をＩｎ
Ｐ上に形成することができ、この積層構造を用いたデバ
イスの特性を改善できる。As described above, according to the present invention, an AlGaAs film having higher performance is used as an insulating film.
It can be formed on P, and the characteristics of the device using this laminated structure can be improved.
Claims (2)
Ａｓ膜を形成するＡｌＧａＡｓ膜形成方法であって、 熱処理工程は、表面自然酸化膜を除去したＩｎＰ（燐化
インジウム）上に、およそ２００℃でＭＢＥ（分子線エ
ピタキシー）法により成長させたＡｌx Ｇａ1- x Ａｓ
（砒化アルミニウムガリウム混晶，０≦ｘ≦１）層を、
およそ５００℃以上７００℃以下の温度において、砒素
圧を加えながら熱処理する工程であることを特徴とする
ＡｌＧａＡｓ膜形成方法。1. A heat treatment process is performed, and AlGa is deposited on InP.
An AlGaAs film forming method for forming an As film, wherein the heat treatment step is performed by growing Al x on InP (indium phosphide) from which a surface natural oxide film has been removed at about 200 ° C. by an MBE (molecular beam epitaxy) method. Ga 1- x As
(Aluminum gallium arsenide mixed crystal, 0 ≦ x ≦ 1) layer,
A method for forming an AlGaAs film, which is a step of performing heat treatment while applying arsenic pressure at a temperature of approximately 500 ° C. or higher and 700 ° C. or lower.
法であって、およそ２００℃で成長させるＡｌＧａＡｓ
層の膜厚を１０ｎｍ（ナノメートル）以上とすることを
特徴とするＡｌＧａＡｓ膜形成方法。2. The method for forming an AlGaAs film according to claim 1, wherein the AlGaAs is grown at about 200 ° C.
A method for forming an AlGaAs film, wherein the film thickness of the layer is 10 nm (nanometer) or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30811192A JPH06140332A (en) | 1992-10-22 | 1992-10-22 | Algaas film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30811192A JPH06140332A (en) | 1992-10-22 | 1992-10-22 | Algaas film formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06140332A true JPH06140332A (en) | 1994-05-20 |
Family
ID=17977009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30811192A Pending JPH06140332A (en) | 1992-10-22 | 1992-10-22 | Algaas film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06140332A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6099640A (en) * | 1997-09-03 | 2000-08-08 | Nec Corporation | Molecular beam epitaxial growth method |
| WO2010067525A1 (en) * | 2008-12-08 | 2010-06-17 | 住友化学株式会社 | Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate |
-
1992
- 1992-10-22 JP JP30811192A patent/JPH06140332A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6099640A (en) * | 1997-09-03 | 2000-08-08 | Nec Corporation | Molecular beam epitaxial growth method |
| WO2010067525A1 (en) * | 2008-12-08 | 2010-06-17 | 住友化学株式会社 | Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate |
| CN102239549A (en) * | 2008-12-08 | 2011-11-09 | 住友化学株式会社 | Semiconductor device, method of manufacturing semiconductor device, semiconductor substrate, and method of manufacturing semiconductor substrate |
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