JPH06151237A - Manufacture of ceramic electronic part - Google Patents
Manufacture of ceramic electronic partInfo
- Publication number
- JPH06151237A JPH06151237A JP4296248A JP29624892A JPH06151237A JP H06151237 A JPH06151237 A JP H06151237A JP 4296248 A JP4296248 A JP 4296248A JP 29624892 A JP29624892 A JP 29624892A JP H06151237 A JPH06151237 A JP H06151237A
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- JP
- Japan
- Prior art keywords
- atmosphere
- ceramic
- firing
- ceramic electronic
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
(57)【要約】
【目的】 PdあるいはPd合金セラミックが一体焼結
されることにより得られるセラミック電子部品におい
て、製造時の処理量あるいは処理方法により発生する内
部構造欠陥および絶縁抵抗をはじめとした電気的諸特性
の変動を抑制し再現性の高い焼成法を提供することを目
的とする。
【構成】 PdあるいはPdを主要電属とする合金電極
とセラミックの一体焼結で、Pdが大気雰囲気中では酸
化する温度域ではPdが酸化しない雰囲気中で焼成し、
その後大気へ置換し、熱電対7等で残存C分が完全に燃
焼したことを検出した後に昇温し、セラミックを焼結さ
せることにより、内部構造欠陥の発生を抑制し、電気的
な諸特性が均一で優れたセラミック電子部品を再現性よ
く製造することが可能となる。
(57) [Abstract] [Purpose] In a ceramic electronic component obtained by integrally sintering Pd or Pd alloy ceramics, including internal structural defects and insulation resistance caused by the amount or method of treatment during manufacturing. It is an object of the present invention to provide a firing method with high reproducibility by suppressing variations in various electrical characteristics. [Structure] Pd or an alloy electrode containing Pd as a main metal and a ceramic are integrally sintered, and fired in an atmosphere in which Pd does not oxidize in a temperature range in which Pd oxidizes in an air atmosphere,
After that, the atmosphere is replaced, and after detecting that the residual C content is completely burned by the thermocouple 7 etc., the temperature is raised and the ceramic is sintered to suppress the occurrence of internal structural defects, and various electrical characteristics. It is possible to manufacture a ceramic electronic component having uniform and excellent reproducibility.
Description
【0001】[0001]
【産業上の利用分野】本発明は主として積層セラミック
コンデンサなどのセラミック電子部品の、電極とセラミ
ックの一体焼結体の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mainly relates to a method for producing an integrated sintered body of an electrode and ceramic for a ceramic electronic component such as a laminated ceramic capacitor.
【0002】[0002]
【従来の技術】従来、PdあるいはPdを主要金属とす
る合金を電極とする一体焼結タイプのセラミック電子部
品は大気中で焼成されていた。前記大気中で焼成した場
合、Pdは820℃までの温度で酸化が進行して酸化物
になるが、820℃以上の温度になると分解し、Pd金
属に変わるため、820℃以上の温度で焼成されるセラ
ミックと同時焼成を行ってもPd金属あるいはPd合金
電極として形成される。このことから、たとえば、積層
セラミックコンデンサの場合、内部電極にPdが多く用
いられているが、この場合、セラミックシートと電極ペ
ーストを交互に積み重ねたグリーンチップを作り、脱バ
インダーを行った後に大気中で焼成を行い、内部にPd
電極を形成する方法がとられていた。2. Description of the Related Art Conventionally, an integrally sintered type ceramic electronic component having Pd or an alloy containing Pd as a main metal as an electrode has been fired in the atmosphere. When fired in the atmosphere, Pd is oxidized at a temperature of up to 820 ° C to become an oxide, but decomposes at a temperature of 820 ° C or higher to be transformed into Pd metal, and thus fired at a temperature of 820 ° C or higher. Even if it is co-fired with the ceramic to be formed, it is formed as a Pd metal or Pd alloy electrode. From this, for example, in the case of a monolithic ceramic capacitor, Pd is often used for internal electrodes. In this case, a ceramic chip and an electrode paste are alternately stacked to make a green chip, and after debinding, it is exposed to the atmosphere. It is fired in Pd inside
The method of forming the electrodes has been taken.
【0003】[0003]
【発明が解決しようとする課題】ところでPdあるいは
Pdを主要金属とする合金電極を有するセラミック電子
部品の1つである積層セラミックコンデンサのグリーン
チップを焼成する場合、内部電極のPdは焼成過程の中
で酸化されて体積が膨張し、内部電極部分の体積が増加
する。そのため、焼成後に内部構造欠陥を発生すること
が多く、Pdの酸化される温度域では不活性雰囲気中あ
るいは真空中で焼成し、PdOの分解温度以上の温度域
では大気中で焼成するという方法もとられてきたが、不
活性雰囲気中の焼成では処理量あるいは処理方法によっ
て脱バインダが十分に行われず、チップ中に残存C分が
高温域(セラミックの焼結温度域)まで残存し、内部構
造欠陥および絶縁抵抗をはじめとした電気的諸特性の変
動を引き起こし易くなるという問題点を有していた。When firing a green chip of a monolithic ceramic capacitor, which is one of the ceramic electronic components having Pd or an alloy electrode containing Pd as a main metal, Pd of the internal electrode is changed during the firing process. Is oxidized and the volume is expanded, and the volume of the internal electrode portion is increased. Therefore, internal structural defects are often generated after firing, and there is also a method of firing in an inert atmosphere or in a vacuum in the temperature range where Pd is oxidized and firing in the air in a temperature range above the decomposition temperature of PdO. However, in the firing in an inert atmosphere, the binder is not sufficiently removed depending on the treatment amount or the treatment method, and the residual C content remains in the chip up to a high temperature range (ceramic sintering temperature range). There is a problem that variations in various electrical characteristics such as defects and insulation resistance are likely to occur.
【0004】本発明は、上述の問題点を解決し、積層セ
ラミックコンデンサ等のセラミック電子部品の内部構造
欠陥および電気的な特性の変動を抑制し得るセラミック
電子部品の製造方法を提供することを目的とする。An object of the present invention is to solve the above-mentioned problems and to provide a method of manufacturing a ceramic electronic component capable of suppressing the internal structural defects of the ceramic electronic component such as a monolithic ceramic capacitor and the fluctuation of electrical characteristics. And
【0005】[0005]
【課題を解決するための手段】本発明の製造方法は、上
記目的を達成するために、セラミックと電極の一体焼結
の際にPdが酸化する温度域はPdが酸化しない雰囲気
中で焼成し、その後大気へ置換し、残存C分が完全に除
去されたことを確認した後に昇温し、セラミックを焼結
させることを特徴とするものである。In order to achieve the above object, the manufacturing method of the present invention is carried out by firing in an atmosphere in which Pd does not oxidize in the temperature range where Pd oxidizes when the ceramic and the electrode are integrally sintered. Then, the atmosphere is replaced, and after confirming that the residual C content is completely removed, the temperature is raised to sinter the ceramic.
【0006】[0006]
【作用】電極とセラミックの一体成形品は、焼成前には
各種有機バインダを成分として含んでいるが、不活性雰
囲気中の焼成では高温域まで成形体内に残留C分が残存
する。実験的には次のようにして確認することができ
る。通常のグリーンチップを熱重量分析および示差熱分
析装置(TG−DTA)で、Pdが酸化される温度域で
は窒素中、PdOがPdへと還元する温度域(900
℃)以上では大気中で測定を行うと、(図1)のDTA
曲線に示すように窒素雰囲気から大気雰囲気へと変換す
る際に残留C分の燃焼による発熱ピークが観察されるこ
とを本発明者は実験的に確認した。このようにして観察
される残留C分が完全に除去されずにセラミックの焼結
温度域まで残存すると、製品の絶縁性など電気的特性変
動の原因となる。したがって、大気中でPdが酸化され
る温度域では不活性ガス中あるいは真空中などPdの酸
化が起こらない雰囲気で焼成し、PdOがPdへと還元
する温度以上の温度域では大気中で焼成する場合に、熱
処理を行うサヤの内部にたとえば熱電対あるいは熱処理
を行う炉の内部に各種ガスセンサを設定し、これによ
り、不活性雰囲気より大気中へと雰囲気を変換する温度
域で、残留C分の除去管理が各センサにより徹底できる
ため、処理量に関係なく完全にしかも均一に残留C分の
存在しない状態を確認した後に焼成でき、絶縁性など電
気的な諸特性が均一な優れたセラミック電子部品を再現
性よく製造することができる。The integrally molded product of the electrode and the ceramic contains various organic binders as components before firing, but when firing in an inert atmosphere, residual C content remains in the molded body up to a high temperature range. It can be experimentally confirmed as follows. In a thermogravimetric analysis and differential thermal analyzer (TG-DTA) of a normal green chip, in a temperature range in which Pd is oxidized, a temperature range in which PdO is reduced to Pd in nitrogen (900
(Fig. 1) DTA of (Fig. 1)
The present inventor experimentally confirmed that an exothermic peak due to combustion of the residual C content is observed when converting from a nitrogen atmosphere to an air atmosphere as shown by the curve. If the residual C content observed in this way is not completely removed and remains up to the sintering temperature range of the ceramic, it may cause variations in electrical characteristics such as the insulating property of the product. Therefore, in the temperature range in which Pd is oxidized in the air, firing is performed in an atmosphere such as inert gas or in a vacuum in which Pd is not oxidized, and in the temperature range above the temperature at which PdO is reduced to Pd, firing is performed in the air. In this case, various gas sensors are set inside the sheath for heat treatment, for example, inside a thermocouple or a furnace for heat treatment, whereby the residual C content is converted in a temperature range in which the atmosphere is converted from an inert atmosphere into the atmosphere. Since the removal control can be thoroughly performed by each sensor, it can be fired after confirming that the residual C content does not exist completely and uniformly regardless of the amount of processing, and it is an excellent ceramic electronic component with uniform electrical characteristics such as insulation. Can be manufactured with good reproducibility.
【0007】[0007]
【実施例】以下、本発明の実施例について詳細に述べ
る。 (実施例1)チタン酸バリウムを主成分とする誘電体粉
末と有機バインダーよりなる30μm厚みのグリーンシ
ートを作製し、金属成分として平均粒径0.4μmのP
d粉を用いた電極ペーストを3μm厚みに印刷し、有効
層30層からなるグリーンチップを作製した。このグリ
ーンチップを窒素中100℃/hrで昇温し、400℃
で脱バインダを行った後、次の2種類の方法で1320
℃まで焼成を行い、絶縁抵抗値の測定を行った。EXAMPLES Examples of the present invention will be described in detail below. Example 1 A 30 μm-thick green sheet made of a dielectric powder containing barium titanate as a main component and an organic binder was prepared, and P having an average particle size of 0.4 μm was used as a metal component.
An electrode paste using d powder was printed to a thickness of 3 μm to prepare a green chip having 30 effective layers. This green chip is heated in nitrogen at 100 ° C / hr to 400 ° C.
After removing the binder at 1320,
Firing was performed up to ° C, and the insulation resistance value was measured.
【0008】(1)900℃まで窒素中焼成。900℃
で大気に切り替え、そのまま900℃から1320℃ま
で大気中焼成。 (2)900℃まで窒素中焼成。900℃で保持しなが
ら減圧した後に大気へ置換、(図2)に示すように焼成
炉3内の焼成サヤ4に設定した熱電対7により残留C分
の燃焼による発熱が確認されなくなるまでこの操作を繰
り返した後、900℃から1320℃まで大気中焼成。(1) Firing up to 900 ° C. in nitrogen. 900 ° C
Then, switch to the atmosphere, and continue firing in the air from 900 ° C to 1320 ° C. (2) Firing in nitrogen up to 900 ° C. After depressurizing while maintaining at 900 ° C, the atmosphere was replaced, and as shown in (Fig. 2), this operation was continued until the heat generation due to the combustion of the residual C was no longer confirmed by the thermocouple 7 set in the firing sheath 4 in the firing furnace 3. After repeating the above, firing in the air from 900 ° C to 1320 ° C.
【0009】なお、図2中の5はガス弁、6はCO,C
O2 等のセンサーである。これらの実験では、いずれの
場合も昇温速度は200℃/hrとした。この結果、
(1)の焼成法では絶縁抵抗の測定値の平均値が8×1
09 Ω(500個の平均)となったのに対し、本実施例
の方法である(2)の焼成法では1×1011Ω(500
個の平均)とセラミック誘電体層の絶縁性が向上した。In FIG. 2, 5 is a gas valve, 6 is CO, C
It is a sensor such as O 2 . In these experiments, the temperature rising rate was 200 ° C./hr in all cases. As a result,
In the firing method of (1), the average value of measured insulation resistance is 8 × 1.
In contrast to the value of 0 9 Ω (average of 500 pieces), the firing method of the method (2) of this example is 1 × 10 11 Ω (500).
The average of the number) and the dielectric properties of the ceramic dielectric layer are improved.
【0010】(実施例2)実施例1と同様のグリーンチ
ップを、実施例1と同様の脱バインダーを行った後、次
の2種類の方法で1320℃まで焼成を行い、絶縁抵抗
値の測定を行った。(Example 2) The same green chip as in Example 1 was debindered as in Example 1 and then fired at 1320 ° C by the following two methods to measure the insulation resistance value. I went.
【0011】(1)900℃まで窒素中焼成。900℃
で大気に切り替え、そのまま900℃から1320℃ま
で大気中焼成。 (2)900℃まで窒素中焼成。900℃で保持しなが
ら大気に置換、雰囲気ガス中のCOおよびCO2を検知
するCO,CO2 センサによりCO,CO2 濃度が検出
限界以下になった後、900℃から1320℃まで大気
中焼成。(1) Firing in nitrogen up to 900 ° C. 900 ° C
Then, switch to the atmosphere, and continue firing in the air from 900 ° C to 1320 ° C. (2) Firing in nitrogen up to 900 ° C. Substituted atmosphere while maintained at 900 ° C., after CO for detecting the CO and CO 2 in the atmospheric gas, the CO by CO 2 sensor, CO 2 concentration decreased below the detection limit in air firing to 1320 ° C. from 900 ° C. .
【0012】これらの実験では、いずれも昇温速度は2
00℃−hrとした。この結果、(1)の焼成法は実施
例1と同じく8×109 Ω(500個の平均)となった
のに対し、本実施例の方法である(2)の焼成法では9
×1010Ω(500個の平均)となり実施例1と同じ効
果が確認された。In each of these experiments, the rate of temperature rise was 2
It was set to 00 ° C-hr. As a result, the firing method of (1) was 8 × 10 9 Ω (average of 500 pieces) as in Example 1, whereas the firing method of (2) of this example was 9
The result was × 10 10 Ω (average of 500 pieces), and the same effect as in Example 1 was confirmed.
【0013】すなわち不活性雰囲気より大気中へと雰囲
気を変換する温度域で、完全にしかも均一に残留C分を
除去するための炉内管理が各センサにより徹底できるた
め、電気的な諸特性を均一にすることができ、このよう
な結果が得られることになる。That is, in the temperature range in which the atmosphere is converted from the inert atmosphere to the atmosphere, the in-furnace management for completely and uniformly removing the residual C content can be thoroughly performed by each sensor, so that various electrical characteristics can be obtained. It can be made uniform, and such a result will be obtained.
【0014】上述の実施例において、Pd電極のかわり
に、Pdを主要金属とする合金電極を用いても同様の結
果が得られることはいうまでもない。It goes without saying that the same result can be obtained by using an alloy electrode containing Pd as a main metal in place of the Pd electrode in the above-mentioned embodiment.
【0015】[0015]
【発明の効果】以上の実施例の説明より明らかなように
本発明による製造方法は、PdあるいはPdを主要金属
とする合金電極とセラミックの一体焼結で、Pdが大気
雰囲気中では酸化する温度域をPdが酸化しない雰囲気
中で焼成し、その後大気中焼成する場合に、不活性雰囲
気から大気中へと雰囲気を変換する温度域で処理量に関
係なく、完全にしかも均一に残存C分を除去するための
管理が各センサにより徹底できるため、内部構造欠陥が
なく、電気的な諸特性が均一な優れたセラミック電子部
品を再現性よく製造することを可能にするものである。As is apparent from the above description of the embodiment, the manufacturing method according to the present invention is a single sintering of Pd or an alloy electrode containing Pd as a main metal and a ceramic, and the temperature at which Pd oxidizes in an air atmosphere. When the region is fired in an atmosphere in which Pd does not oxidize, and then fired in the air, the residual C content is completely and uniformly irrespective of the treatment amount in the temperature range in which the atmosphere is converted from the inert atmosphere to the air. Since the control for removal can be thoroughly performed by each sensor, it is possible to reproducibly manufacture an excellent ceramic electronic component having no internal structural defect and uniform electrical characteristics.
【図1】積層セラミックコンデンサのグリーンチップの
熱重量分析(TG)−示差熱分析(DTA)測定結果を
示す図FIG. 1 is a view showing a thermogravimetric analysis (TG) -differential thermal analysis (DTA) measurement result of a green chip of a multilayer ceramic capacitor.
【図2】焼成炉および焼成用サヤを示す断面図FIG. 2 is a sectional view showing a firing furnace and a firing sheath.
1 DTA曲線 2 TG曲線 3 焼成炉 4 焼成サヤ 5 ガス弁 6 CO,CO2 センサー 7 熱電対1 DTA curve 2 TG curve 3 Firing furnace 4 Firing sheath 5 Gas valve 6 CO, CO 2 sensor 7 Thermocouple
フロントページの続き (72)発明者 井口 隆 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 沖中 庸一 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Front page continuation (72) Inventor Takashi Iguchi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Yoichi Okinaka, 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (3)
の電極とセラミックを一体焼結を行う方法であって、P
dが大気雰囲気で酸化される温度域はPdが酸化しない
雰囲気中で焼成し、その後大気へ置換し、残存Cが完全
に燃焼した後に昇温し、セラミックを焼結させるセラミ
ック電子部品の製造方法。1. A method of integrally sintering a ceramic electrode and an electrode of Pd or an alloy containing Pd as a main metal, the method comprising:
A method for producing a ceramic electronic component in which a temperature range in which d is oxidized in an air atmosphere is fired in an atmosphere in which Pd is not oxidized, and then the atmosphere is replaced, and after the remaining C is completely burned, the temperature is raised to sinter the ceramic .
ンデンサである請求項1記載のセラミック電子部品の製
造方法。2. The method of manufacturing a ceramic electronic component according to claim 1, wherein the ceramic electronic component is a monolithic ceramic capacitor.
るいは真空である請求項1記載のセラミック電子部品の
製造方法。3. The method for producing a ceramic electronic component according to claim 1, wherein the atmosphere in which Pd is not oxidized is an inert gas or vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04296248A JP3098118B2 (en) | 1992-11-06 | 1992-11-06 | Manufacturing method of ceramic electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04296248A JP3098118B2 (en) | 1992-11-06 | 1992-11-06 | Manufacturing method of ceramic electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06151237A true JPH06151237A (en) | 1994-05-31 |
| JP3098118B2 JP3098118B2 (en) | 2000-10-16 |
Family
ID=17831113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04296248A Expired - Fee Related JP3098118B2 (en) | 1992-11-06 | 1992-11-06 | Manufacturing method of ceramic electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3098118B2 (en) |
-
1992
- 1992-11-06 JP JP04296248A patent/JP3098118B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3098118B2 (en) | 2000-10-16 |
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