JPH06151702A - Multichip module - Google Patents
Multichip moduleInfo
- Publication number
- JPH06151702A JPH06151702A JP4297533A JP29753392A JPH06151702A JP H06151702 A JPH06151702 A JP H06151702A JP 4297533 A JP4297533 A JP 4297533A JP 29753392 A JP29753392 A JP 29753392A JP H06151702 A JPH06151702 A JP H06151702A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- insulating layer
- semiconductor chips
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】
【目的】基板上に半導体チップを実装したマルチチップ
モジュールにおいて、基板面積の縮小化および基板上の
配線長の短縮化を行うことによって、マイクロプロセッ
サの高速化を図る。
【構成】基板1に実装されている半導体チップ2、3を
覆うように絶縁層6を設け、絶縁層6の上に第2層目の
半導体チップ4を実装する。この際、第2層目の半導体
チップ4が基板1上の配線層5とコンタクトをとれるよ
うに絶縁層6にビアホール7をあけ、絶縁層6上の金属
配線8と導通させる。さらに、この上に前記絶縁層6、
ビアホール7、金属配線8を順次形成し、半導体チップ
を複数層に縦積みしてマルチチップモジュールを形成す
る。
(57) [Abstract] [Purpose] In a multi-chip module in which a semiconductor chip is mounted on a substrate, the size of the substrate is reduced and the wiring length on the substrate is shortened, thereby increasing the speed of the microprocessor. [Structure] An insulating layer 6 is provided so as to cover the semiconductor chips 2 and 3 mounted on a substrate 1, and a second-layer semiconductor chip 4 is mounted on the insulating layer 6. At this time, a via hole 7 is opened in the insulating layer 6 so that the semiconductor chip 4 of the second layer can make contact with the wiring layer 5 on the substrate 1 and is electrically connected to the metal wiring 8 on the insulating layer 6. Furthermore, the insulating layer 6,
The via hole 7 and the metal wiring 8 are sequentially formed, and the semiconductor chips are vertically stacked in a plurality of layers to form a multi-chip module.
Description
【0001】[0001]
【産業上の利用分野】本発明はマイクロプロセッサやメ
モリ等の半導体チップを同一基板上に複数個実装するマ
ルチチップモジュールに関し、特に半導体チップを縦方
向に積み重ねるマルチチップモジュールに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chip module in which a plurality of semiconductor chips such as microprocessors and memories are mounted on the same substrate, and more particularly to a multi-chip module in which semiconductor chips are vertically stacked.
【0002】[0002]
【従来の技術】近年、マイクロプロセッサの高速化や装
置の小型化に伴い、高密度実装の一手法としてマルチチ
ップモジュールが利用されつつある。従来のマルチチッ
プモジュールは、基板としてアルミナ等のセラミック基
板を用いるのが一般的で、シリコン基板を用いたものも
ある。従来のマルチチップモジュールの一例を図3の斜
視図に示す。図3の例では、セラミック等の基板1上に
配線層5として銅等の金属を、また配線層5間の絶縁層
としてポリイミド等の樹脂を用いて複数層の薄膜配線を
施し、この基板1上に半導体チップ2、3をフリップチ
ップ方式により複数個実装し、さらにこの基板1をLS
I用のセラミックパッケージ11に搭載している。2. Description of the Related Art In recent years, multi-chip modules have been used as a method for high-density mounting with the increase in speed of microprocessors and downsizing of devices. A conventional multi-chip module generally uses a ceramic substrate such as alumina as a substrate, and also uses a silicon substrate. An example of a conventional multi-chip module is shown in the perspective view of FIG. In the example of FIG. 3, a plurality of thin film wirings are formed on a substrate 1 made of ceramic or the like by using a metal such as copper as the wiring layer 5 and a resin such as polyimide as an insulating layer between the wiring layers 5, and the substrate 1 A plurality of semiconductor chips 2 and 3 are mounted on the upper surface by a flip-chip method, and the substrate 1 is LS-mounted.
It is mounted on the ceramic package 11 for I.
【0003】このマルチチップモジュールは、プリント
配線基板にLSI用パッケージを個々に実装する場合に
比べ、個々の半導体チップをパッケージに封入せずに実
装する方式のため、パッケージを用いない分だけ実装面
積が広くなり高密度実装ができる。また、パッケージリ
ードが無い分だけ半導体チップ間の配線長を短くでき、
配線による遅延時間を短縮できるためマイクロプロセッ
サの高速化が実現できる等の長所があり、広く用いられ
ている。This multi-chip module is a method of mounting individual semiconductor chips without enclosing them in a package, as compared with the case where individual LSI packages are mounted on a printed wiring board. Wider and allows high-density mounting. Also, because there are no package leads, the wiring length between semiconductor chips can be shortened,
Since the delay time due to the wiring can be shortened, it has the advantage that the microprocessor can be speeded up and is widely used.
【0004】[0004]
【発明が解決しようとする課題】上述した従来のマルチ
チップモジュールは、半導体チップを基板平面に沿って
実装しているので、基板に実装する半導体チップの個数
が増加するのに比例して基板の面積が増加するという問
題点がある。また、基板に実装する半導体チップの個数
が増加するのに比例して半導体チップ間の接続を行うた
めの配線層の領域も増加し、基板面積の増加と配線長が
長くなることによる配線層での信号の伝搬遅延時間が増
大するという問題がある。In the above-described conventional multi-chip module, the semiconductor chips are mounted along the plane of the substrate, so that the number of semiconductor chips mounted on the substrate increases in proportion to the number of semiconductor chips mounted on the substrate. There is a problem that the area increases. In addition, as the number of semiconductor chips mounted on the board increases, the area of the wiring layer for connecting the semiconductor chips also increases in proportion to the increase in the board area and the increase in the wiring length. There is a problem in that the propagation delay time of the signal is increased.
【0005】[0005]
【課題を解決するための手段】本発明のマルチチップモ
ジュールは、基板上に実装した1層目の半導体チップ
と、半導体チップの一部または全部を覆う領域に形成し
た絶縁層と、基板上の配線とのコンタクトをとるための
ビアホールを絶縁層に形成し、このビアホールを介して
導通する絶縁層上に形成された金属配線層と、この金属
配線層上に実装した2層目の半導体チップとから構成さ
れ、前記絶縁層、ビアホール、金属配線層を順次積層す
ることで半導体チップを基板上に複数層に縦積みした構
造を有している。A multi-chip module of the present invention includes a first-layer semiconductor chip mounted on a substrate, an insulating layer formed in a region covering a part or all of the semiconductor chip, and a substrate on the substrate. A via hole for making contact with a wiring is formed in an insulating layer, a metal wiring layer formed on the insulating layer that conducts through the via hole, and a second-layer semiconductor chip mounted on the metal wiring layer. The semiconductor chip has a structure in which a plurality of layers of semiconductor chips are vertically stacked on the substrate by sequentially laminating the insulating layer, the via hole, and the metal wiring layer.
【0006】[0006]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の一実施例の断面図である。以下に図
面を参照して本実施例のマルチチップモジュールの構造
を説明する。The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an embodiment of the present invention. The structure of the multi-chip module of this embodiment will be described below with reference to the drawings.
【0007】図1に示すように、セラミック等でできた
基板1の上に半導体チップ2および3が実装される。基
板1には、その上面に半導体チップ2および3が実装さ
れる面と配線層5の一部とが形成され、また、基板内部
に配線層5(電源層やグランド層を含む)が形成され、
さらに配線層5から延びパッケージに接続するリード端
子が基板下面側に導出している。この基板1上の半導体
チップ実装面に半導体チップ2および3を接着剤で固定
し、次いで半導体チップ2および3はワイヤボンディン
グにより基板1上に形成された配線層5と接続される。As shown in FIG. 1, semiconductor chips 2 and 3 are mounted on a substrate 1 made of ceramic or the like. A surface of the substrate 1 on which the semiconductor chips 2 and 3 are mounted and a part of the wiring layer 5 are formed on the upper surface of the substrate 1, and a wiring layer 5 (including a power supply layer and a ground layer) is formed inside the substrate. ,
Further, lead terminals extending from the wiring layer 5 and connected to the package are led out to the lower surface side of the substrate. The semiconductor chips 2 and 3 are fixed to the semiconductor chip mounting surface on the substrate 1 with an adhesive, and then the semiconductor chips 2 and 3 are connected to the wiring layer 5 formed on the substrate 1 by wire bonding.
【0008】次に、半導体チップを縦積みするために、
基板1に実装されている半導体チップ2および3を覆う
ようにポリイミド等の樹脂によって絶縁層6を形成し、
その上に第2層目の半導体チップ4を実装する。この
時、半導体チップ4が基板1上の配線層5とコンタクト
をとれるように、通常の露光技術により絶縁層6にビア
ホール7をあけ、そこにアルミニウム等の導体を形成し
絶縁層6上に施された金属配線8とコンタクトさせる。
なお、絶縁層6は基板の全領域ではなく第2層目の半導
体チップ4を重ねる領域にのみ形成してもよい。この縦
積み技術を繰り返すことにより、第3層目以降の半導体
チップを積み重ねることができる。Next, in order to vertically stack the semiconductor chips,
An insulating layer 6 is formed of a resin such as polyimide so as to cover the semiconductor chips 2 and 3 mounted on the substrate 1,
The semiconductor chip 4 of the second layer is mounted on it. At this time, a via hole 7 is formed in the insulating layer 6 by a normal exposure technique so that the semiconductor chip 4 can make contact with the wiring layer 5 on the substrate 1, and a conductor such as aluminum is formed in the via hole 7 to form the via hole on the insulating layer 6. The contact is made with the formed metal wiring 8.
The insulating layer 6 may be formed not in the entire region of the substrate but only in the region where the second-layer semiconductor chip 4 is overlaid. By repeating this vertical stacking technique, the semiconductor chips of the third and subsequent layers can be stacked.
【0009】図2は本発明の一実施例の効果を説明する
図である。すなわち、図2(A)は半導体チップを平面
的に配置した場合の上面図であり、図2(B)は半導体
チップを3層に積み重ねた場合の上面図である。図2で
は、半導体チップとして1個のCPU9と3個のキャッ
シュメモリ10で構成されたマルチチップモジュールの
例を示している。FIG. 2 is a diagram for explaining the effect of one embodiment of the present invention. That is, FIG. 2A is a top view when the semiconductor chips are arranged in a plane, and FIG. 2B is a top view when the semiconductor chips are stacked in three layers. FIG. 2 shows an example of a multi-chip module composed of one CPU 9 and three cache memories 10 as a semiconductor chip.
【0010】図(A)では、すべての半導体チップを平
面的に実装しているため、セラミックパッケージ11の
寸法を40mm×40mmとしてモジュールの面積は1
600mm2 となり、また、図示の配線寸法からCPU
9とキャッシュメモリ10を結ぶ配線の長さは最長配線
の場合38mmとなる。これに対し図(B)では、3個
のキャッシュメモリを縦積み実装しているため、セラミ
ックパッケージ11の寸法を40mm×20mmとすれ
ばモジュールの面積は800mm2 で図(A)の1/2
となり、CPU9とキャッシュメモリ10を結ぶ配線の
長さは8〜10mm(8mm+絶縁層の厚さ1mm×絶
縁層数0〜2)として図(A)の約1/4となる。In FIG. 1A, since all the semiconductor chips are mounted in a plane, the size of the ceramic package 11 is 40 mm × 40 mm, and the area of the module is 1.
It will be 600 mm 2 , and from the wiring dimensions shown in the figure, the CPU
The length of the wire connecting 9 and the cache memory 10 is 38 mm in the case of the longest wire. On the other hand, in FIG. 3B, three cache memories are mounted vertically, so if the dimensions of the ceramic package 11 are 40 mm × 20 mm, the area of the module is 800 mm 2, which is 1/2 of that of FIG.
Therefore, the length of the wiring connecting the CPU 9 and the cache memory 10 is about 8 to 10 mm (8 mm + the thickness of the insulating layer 1 mm × the number of insulating layers 0 to 2), which is about 1/4 of the figure (A).
【0011】本実施例では半導体チップをワイヤボンデ
ィングにより基板に実装した場合について述べてきた
が、基板上の配線層に形成した電極端子とフリップチッ
プのバンプとを接続することによって、フリップチップ
を基板にフェイスダウンボンディングすることもでき
る。この場合も、本実施例と同様の積み重ね技術でフリ
ップチップの縦積み実装を実現することができる。Although the semiconductor chip is mounted on the substrate by wire bonding in this embodiment, the flip chip is mounted on the substrate by connecting the electrode terminals formed on the wiring layer on the substrate to the bumps of the flip chip. Face down bonding can also be performed. Also in this case, flip chip vertical stacking can be realized by the same stacking technique as in the present embodiment.
【0012】[0012]
【発明の効果】以上説明したように本発明は、半導体チ
ップを基板上に縦積み実装しているので、半導体チップ
を平面的に実装している従来のマルチチップモジュール
に比べてモジュールの面積を大幅に縮小することがで
き、最大で実装した半導体チップの総面積の数分の一に
縮小することが可能である。また、モジュール面積の縮
小化に伴い半導体チップ間の配線長を短縮でき、配線上
の信号の伝搬遅延時間を短縮できるのでマイクロプロセ
ッサの高速化が実現できるという効果がある。As described above, according to the present invention, the semiconductor chips are vertically stacked and mounted on the substrate. Therefore, the area of the module is smaller than that of the conventional multi-chip module in which the semiconductor chips are mounted flat. The size can be greatly reduced and can be reduced to a fraction of the total area of the mounted semiconductor chips. Further, as the module area is reduced, the wiring length between the semiconductor chips can be shortened, and the signal propagation delay time on the wiring can be shortened, so that the microprocessor can be speeded up.
【図1】本発明の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of the present invention.
【図2】本発明の一実施例の効果を説明する図で、同図
(A)は半導体チップを平面的に実装した場合の上面
図、同図(B)は積層した場合の上面図である。2A and 2B are views for explaining the effect of one embodiment of the present invention. FIG. 2A is a top view when semiconductor chips are mounted on a plane, and FIG. 2B is a top view when they are stacked. is there.
【図3】従来のマルチチップモジュールの斜視図であ
る。FIG. 3 is a perspective view of a conventional multi-chip module.
1 基板 2、3、4 半導体チップ 5 配線層 6 絶縁層 7 ビアホール 8 金属配線 9 CPU 10 キャッシュメモリ 11 セラミックパッケージ 1 Substrate 2, 3, 4 Semiconductor Chip 5 Wiring Layer 6 Insulating Layer 7 Via Hole 8 Metal Wiring 9 CPU 10 Cache Memory 11 Ceramic Package
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 25/04 Continuation of front page (51) Int.Cl. 5 Identification number Office reference number FI technical display area H01L 25/04
Claims (2)
複数個実装しこの基板をパッケージに搭載したマルチチ
ップモジュールにおいて、基板上に実装した第1層目の
半導体チップと、この半導体チップの一部または全部を
覆う領域に形成した絶縁層と、基板上の配線とのコンタ
クトをとるためのビアホールを前記絶縁層に形成し、こ
のビアホールを介して導通する絶縁層上に形成された金
属配線層と、この金属配線層上に実装した第2層目の半
導体チップとを有することを特徴とするマルチチップモ
ジュール。1. In a multi-chip module in which a plurality of semiconductor chips are mounted on a substrate on which wiring is provided and the substrate is mounted in a package, the first-layer semiconductor chip mounted on the substrate and the semiconductor chip A metal wiring formed on an insulating layer formed in a region covering a part or the whole and a via hole for making contact with a wiring on a substrate, and formed on the insulating layer, and conducting on the insulating layer A multi-chip module having a layer and a second-layer semiconductor chip mounted on the metal wiring layer.
と同様の絶縁層、ビアホール、金属配線層を繰り返し形
成し、半導体チップを複数層に縦積みしたことを特徴と
するマルチチップモジュール。2. A multi-chip module characterized in that the same insulating layer, via holes, and metal wiring layers as those for mounting the second-layer semiconductor chip are repeatedly formed, and the semiconductor chips are vertically stacked in a plurality of layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4297533A JPH06151702A (en) | 1992-11-09 | 1992-11-09 | Multichip module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4297533A JPH06151702A (en) | 1992-11-09 | 1992-11-09 | Multichip module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06151702A true JPH06151702A (en) | 1994-05-31 |
Family
ID=17847771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4297533A Pending JPH06151702A (en) | 1992-11-09 | 1992-11-09 | Multichip module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06151702A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996001498A1 (en) * | 1994-07-04 | 1996-01-18 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device |
| US5856915A (en) * | 1997-02-26 | 1999-01-05 | Pacesetter, Inc. | Vertically stacked circuit module using a platform having a slot for establishing multi-level connectivity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529533A (en) * | 1991-07-23 | 1993-02-05 | Fujitsu Ltd | Semiconductor device |
| JPH05259376A (en) * | 1992-03-13 | 1993-10-08 | Matsushita Electric Works Ltd | Semiconductor device |
-
1992
- 1992-11-09 JP JP4297533A patent/JPH06151702A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0529533A (en) * | 1991-07-23 | 1993-02-05 | Fujitsu Ltd | Semiconductor device |
| JPH05259376A (en) * | 1992-03-13 | 1993-10-08 | Matsushita Electric Works Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996001498A1 (en) * | 1994-07-04 | 1996-01-18 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device |
| US6303989B1 (en) | 1994-07-04 | 2001-10-16 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit device on metal board with CPU power converter |
| US5856915A (en) * | 1997-02-26 | 1999-01-05 | Pacesetter, Inc. | Vertically stacked circuit module using a platform having a slot for establishing multi-level connectivity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980623 |