JPH06160431A - Semiconductor device evaluation probe - Google Patents

Abstract

(57) [Abstract] [Purpose] To obtain a probe that can obtain good contact without being affected by the unevenness of the contact portion of the semiconductor device (measurement object) and the probe, the insulating film on the pad, and the like. [Constitution] In a probe composed of an insulating film 1 having a contact portion 2 on its lower surface and a signal line 4 and a ground line 5 connected to the contact portion 2, a needle provided on the back surface of the contact portion 2 and the outer frame of the probe. 7 and the contact portions 2 are pressed by the needles 7. Further, the notch 8 is provided in the insulating film 1 between the contact portions 2 so that each contact portion 2 can be moved separately. Further, the circuit elements 9 and 10 for the test circuit and the vibrator 11 are provided on the upper surface or the lower surface of the insulating film 1 so that unnecessary lines, parasitic capacitance, inductance and the like are not interposed. Further, a back surface ground electrode 13 is provided on the back surface of the contact portion 2 of the insulating film 1,
Further, the needle 7 is connected to the ground electrode 13 by a wire connection 14 so as to eliminate the adverse effect of the leak signal.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device evaluation probe for evaluating a device such as a semiconductor device, and more particularly to a probe used for evaluation of a high frequency element used in a microwave band.

[0002]

2. Description of the Related Art FIG. 9 is a sectional view showing a conventional semiconductor device evaluation probe. In the figure, reference numeral 60 is a semiconductor device evaluation probe. Reference numeral 6 denotes a quadrangular outer frame of the probe, and 1 denotes an insulating film of the probe, for example, having a thickness of 100 μm made of polyimide or the like, and its outer peripheral end is fixedly provided on the outer frame 6. Reference numeral 2 denotes a contact portion such as a bump provided on the lower surface on the inner peripheral end side of the insulating film 1, which has a size of 100 μm square, for example. Reference numeral 3 denotes a semiconductor device evaluated by the probe, which has a metal pad (not shown) on the upper surface. Reference numeral 15 is fixedly provided on the lower surface of the pressing support frame 6a fixed between the outer frames 6, and the contact portion 2 is pushed downward from above with the insulating film 1 bent to make contact with the semiconductor device 3. It is a pressing force.

FIG. 10 is a bottom view of the insulating film 1 of the conventional semiconductor device evaluation probe 60.
Reference numeral 4 is a signal line provided on the lower surface of the insulating film 1, 5 is a ground electrode also provided on the lower surface with a predetermined distance from the signal line 4, and the contact portion 2 is the signal. It is provided at the tip of the line 4 at a position corresponding to a pad (not shown) on the upper surface of the semiconductor device 3.

Next, a method of testing a semiconductor device using the probe will be described. Since the insulating film 1 is generally made of a flexible material such as resin, by pressing the contact portion 2 downward with the presser 15 as shown in FIG.
It can be transformed into the shape shown in the figure. Rectangular outer frame 6, insulating film 1, and pressing support frame 15a
By placing the probe 60 composed of the press 15 and the pressing device 15 on the semiconductor device 3, the contact portion 2 and the pad on the upper surface of the semiconductor device 3 are brought into electrical contact with each other. Since each signal line 4 on the insulating film 1 is a coplanar line by providing the ground electrodes 5 on both sides thereof, a high frequency signal such as a microwave band can be transmitted. The signal line 4 on the insulating film 1 is connected to a transmission line such as a coaxial line or a waveguide outside the probe at the outer frame 6.

In the present probe, all the contact portions 2 are pressed simultaneously from above by one presser 15 to make contact with the pads on the upper surface of the semiconductor device 3.
The contact portion 2 of the probe 60 and the pad portion of the semiconductor device 3 are easily affected by irregularities, and the contact property between the contact portion 2 of the probe 60 and the pad of the semiconductor device 3 is poor. In addition, when an insulating film such as an oxide film is present on the upper surface of the pad of the semiconductor device 3, there is a case where the contact portion 2 of the probe does not come into contact with the pad because lateral friction is small.

[0006]

Since the conventional semiconductor device evaluation probe is constructed as described above, the contact portions 2 of all the probes must be pressed simultaneously from above by one presser 15 to obtain contact. In addition, there is a problem that the contact property is apt to be affected by the unevenness of the contact portion such as the semiconductor device or the bump and the contact property is poor. Further, since there is little lateral friction when the contact portion contacts the pad, the insulating film such as an oxide film on the pad on the upper part of the semiconductor device cannot be broken, and the contact portion can contact the pad. There was a problem such as not being able to.

The present invention has been made to solve the above problems, and is not affected by the unevenness of the surface of the semiconductor device, the unevenness of the contact portion of the probe, the insulating film on the pad, or the like. It is an object of the present invention to provide a semiconductor device evaluation probe that can obtain good contact.

[0008]

According to another aspect of the present invention, there is provided a semiconductor device evaluation probe in which a back surface of a contact portion of a probe and a needle fixed to a frame of the probe are coupled to each other, and each contact portion is connected by each needle. I tried to hold it down.

Further, a notch is provided in a portion between the contact portions of the insulating film.

Further, a circuit element or a vibrator for testing a semiconductor device is provided on the upper surface or the lower surface of the insulating film.

Further, a ground electrode is provided on the upper surface of the insulating film or on the back surface of the contact portion or on the entire surface including the back surface portion.

Further, a needle for pressing the contact portion is connected to the ground electrode.

[0013]

In the probe for evaluating a semiconductor device according to the present invention, the back surface of the contact portion and the needle are connected to each other and each contact portion is pressed by each needle, so that the unevenness of each contact portion and the semiconductor device to be evaluated can be improved. It is less likely to be affected by the unevenness of the surface, and good contact can be obtained. Moreover, the effect of the lateral sliding of the needle allows the insulating film on the pad of the semiconductor device to be evaluated to be broken by lateral friction, resulting in good contact. Can be improved.

Further, since the notch is provided in the portion between the contact portions of the insulating film, each contact portion can be adjusted separately even if the unevenness of each contact portion or the pad unevenness of the semiconductor device is large. It is possible to improve the contact property.

Since a circuit element or a vibrator for testing the semiconductor device is added to the upper surface or the lower surface of the insulating film, the circuit element is conventionally provided outside the outer frame of the probe. Since there is no unnecessary line or parasitic inductance / capacitance between the circuit element and the semiconductor device to be evaluated, more accurate measurement is possible. Further, by applying a slight vibration to the contact portion under the insulating film by the vibrator, the insulating film on the pad surface on the semiconductor device is easily broken by friction, and the contact property between the contact portion and the pad is improved.

By providing a ground electrode on at least the back surface of the contact portion on the upper surface of the insulating film,
It is possible to reduce leakage of a signal component transmitted through the signal line on the lower surface of the insulating film to the needle, and it is possible to perform probing without impairing high frequency characteristics.

Further, by connecting the needle to the ground electrode, it is possible to further prevent the adverse effect of the leakage of the microwave.

[0018]

【Example】

Example 1. Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view of a semiconductor device evaluation probe 71 according to a first embodiment of the present invention, and FIG. 2 is a bottom view of an insulating film 1 of the probe. In FIGS. 1 and 2, 7 is a needle such as tungsten, and as shown in FIG. 2, the needle 7 is fixed to the back surface (corresponding to the upper surface in the figure) of the contact portion 2 of the present probe 71 with an adhesive or the like. I am doing it. The needle 7 is attached to the outer frame 6 of the probe, and when the probe is attached to the semiconductor device 3 to be evaluated, the needle 7 presses the contact portion 2 due to its elasticity. Each signal line 4 provided on the insulating film 1 of the present probe is a coplanar line by the ground electrode 5 and can transmit a microwave band signal.

Semiconductor device evaluation probe 7 of the first embodiment
In No. 1, since the needles 7 are attached to the respective contact portions 2 of the probe, even if the bumps of the contact portion 2 or the pad portion of the semiconductor device to be evaluated have some irregularities, the size of the bumps is not large. Any contact can be made within the range of expansion and contraction. Further, when the needle 7 is lowered from above to contact the semiconductor device 3 to be evaluated as shown in FIG. 1, the needle 7 slides laterally, which causes friction in the lateral direction. 3 Even if there is an insulating film such as an oxide film on the surface of the pad on the upper surface, the contact portion 2 of the probe 2
0 easily contacts the pad.

Example 2. 3 is a sectional view showing a semiconductor device evaluation probe 72 according to a second embodiment of the present invention, and FIG. 4 is an insulating film 1 of the semiconductor device evaluation probe.
3 and 4 are bottom views of FIG. 3 and FIG. 4, 8 is a notch formed by cutting a portion of the insulating film 1 between the contact portions 2, and 14 is a hole formed in the center surrounded by the notch 8. Is.

In the second embodiment, since the notches 8 are provided between the contact portions 2 of the probe 72, the contact portions 2 can be moved separately from each other as compared with the case where the notches are not provided. Even if the surface of the contact portion 2 or the surface of the semiconductor device to be evaluated has irregularities beyond the range of expansion and contraction of the insulating film 1, the contact portion 20 of the probe and the semiconductor device 3 to be evaluated 3
It is possible to make contact with the pad of. Further, since the portion surrounded by each notch 8 becomes the hole 14, the semiconductor device 3 to be evaluated can be directly seen from above, alignment at the time of evaluation becomes easy, and a defective product is obtained as a result of evaluation of the semiconductor device. When it is determined that the ink is discharged onto the surface of the semiconductor device, ink can be printed to mark a defective product, or laser light irradiation trimming for cutting a required circuit of the semiconductor device can be performed.

Example 3. FIG. 5 is a sectional view showing a semiconductor device evaluation probe 73 according to a third embodiment of the present invention, and FIG. 6 is a bottom view of the insulating film 1 of the probe.
In both figures, 9 is the insulating film 1 of the probe 73.
5 is a chip capacitor attached to the inner (upper side of FIG. 5) surface of the insulating film 1, 10 is a chip resistor attached to the outer (lower side of FIG. 5) surface of the insulating film 1, and 11 is a surface of the insulating film 1. A stretchable oscillator such as a piezo element attached to the outer surface (lower side in FIG. 5), and 12 is a through hole that electrically connects the upper surface and the lower surface of the insulating film 1. Reference numeral 50 is a vibrator electrode for applying a voltage to the vibrator 11.

In the probe 73 of the third embodiment shown in FIGS. 5 and 6, the chip resistor 10 and the vibrator 11 are attached to the lower surface of the insulating film 1, and the chip capacitor 9 is the insulating film 1. Is attached to the upper surface of. Both electrodes of the chip resistor 10 are electrically connected to the signal line 4 and the ground electrode 5 on the lower surface of the insulating film 1, respectively, and both electrodes of the chip capacitor 9 are insulated through the through holes 12. The signal line 4 and the ground electrode 5 on the lower surface of the film 1 are electrically connected to each other. Both electrodes of the vibrator 11 are electrically connected to the vibrator electrode 50 and the ground electrode 5 on the lower surface of the insulating film 1, respectively.

In the conventional blower circuit, circuit elements such as resistance, capacitance, and inductance for testing semiconductor devices are
Although it was provided outside the outer frame of the prober, it was tested in a state different from that in which each circuit element was provided near the semiconductor device during actual mounting. In the probe 73 of Example 3, the chip capacitor 9
The chip resistance 10 and the semiconductor device 3 to be evaluated and the contact portion 2
Since the semiconductor device 3 to be evaluated and the circuit elements 9 and 10 do not have unnecessary lines, parasitic capacitances, inductances, etc. interposed therebetween, they are closer to the mounted state and more accurate. Various measurements are possible. Also, the oscillator 1
By applying a voltage to 1 through the vibrator electrode 50 to vibrate, the tension of the insulating film 1 can be vibrated, and thus the contact portion 2 of the probe can be laterally vibrated. The insulating film such as the oxide film on the surface of the pad on the semiconductor device can be easily broken by friction.

In the above embodiments, the circuit element provided on the probe is the chip capacitor 9 or the chip resistor 10, but other circuit elements such as inductance may be provided.

Example 4. FIG. 7 is a sectional view of a semiconductor device evaluation probe 74 according to a fourth embodiment of the present invention, and FIG. 8 is a bottom view of the insulating film 1 of the probe. In both figures, 13 is a back surface ground electrode provided on the entire upper surface of the insulating film 1, and is provided so as to cover the upper side of each contact portion 2 of the probe. Reference numeral 16 is a wire that electrically connects the ground electrode 5 or the back surface ground electrode 13 and the needle 7,
Reference numeral 12 is a through hole that is provided so as to penetrate the insulating film 1 and connects the ground electrode 5 and the backside ground electrode 13 to each other.

Generally, when a signal in the microwave band flows through the signal line 4 of a high frequency circuit such as the present probe, unnecessary signal components may be leaked to the electrodes near the line 4 due to the influence of coupling or the like. There is. Since a conductive material such as tungsten is used for the needle 7 of the probe in order to obtain elasticity, unless the contact portion 2 and the needle 7 are electrically separated, the leakage signal may cause an influence. Accurate measurement may not be possible.

In the probe 74 of the fourth embodiment, (1) by providing the back surface ground electrode 13 on the entire upper surface of the insulating film 1 including the back surface of the contact portion 2 of the probe, the microwave passing through the contact portion 2 is provided. A ground plane is formed between the signal and the needle 7 to provide electrical shielding,

(2) Furthermore, by setting the potential of the needle 7 to the ground potential via the connection 14, a signal leaks to the needle 7 and the needle 7
By preventing coupling from leaking the signal to other parts, the adverse effect of the leak signal is eliminated. As a result, the semiconductor device under evaluation can be accurately measured without being affected by the leakage signal.

In the fourth embodiment, a conductive adhesive is used as an adhesive for fixing the needle 7 and the back surface ground electrode 13 so that the needle 7 is grounded without using the wire connection 14. Alternatively, the conductive adhesive and the wire connection 14 may be used in combination. Also, the ground electrode 5 on the lower surface of the insulating film 1 and the back surface ground electrode 13 on the upper surface of the insulating film 1 are connected by the through holes 12, but this may be connected by another method such as connection with a gold ribbon. May be.

In the fourth embodiment, the back surface ground electrode 1 is used.
3 is provided on the entire upper surface of the insulating film 1. Further, in Examples 1 to 4, the signal line 4 and the ground electrode 5 form a coplanar line, which is a microstrip line or a slot. It may be one that constitutes another transmission line such as a line.

[0032]

As described above, according to the semiconductor device evaluation probe of the present invention, the back surface of the contact portion of the probe and the needle are coupled to each other, and each contact portion is pressed by each needle. There is an effect that good contact between the contact portion of the probe and the pad of the semiconductor device under measurement can be obtained.

Further, since the notch is provided in the portion between the contact portions of the insulating film, each contact portion of the probe can be moved separately, and there is an effect that a better contact can be obtained.

Further, since the circuit element is provided on the upper surface or the lower surface of the insulating film, it is possible to accurately measure the semiconductor device to be evaluated without interposing unnecessary lines, parasitic inductance and capacitance in the measuring circuit. Further, similarly, since the vibrator is provided on the upper surface or the lower surface of the insulating film, there is an effect that good contact can be obtained without being affected by the insulating film on the pad.

Further, by providing a ground electrode on the upper surface of the insulating film including at least the back surface of the contact portion, and further by connecting the needle and the ground electrode, unnecessary signal components to the needle can be provided. There is an effect that leakage can be prevented and accurate probe can be performed without impairing high frequency characteristics.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device evaluation probe according to a first embodiment of the present invention.

FIG. 2 is a bottom view of an insulating film of the probe shown in FIG.

FIG. 3 is a sectional view of a semiconductor device evaluation probe according to a second embodiment of the present invention.

FIG. 4 is a bottom view of the insulating film of the probe of FIG.

FIG. 5 is a sectional view of a semiconductor device evaluation probe according to a third embodiment of the present invention.

6 is a bottom view of the insulating film of the probe of FIG.

FIG. 7 is a sectional view of a semiconductor device evaluation probe according to a fourth embodiment of the present invention.

FIG. 8 is a bottom view of the insulating film of the probe of FIG.

FIG. 9 is a cross-sectional view of a conventional semiconductor device evaluation probe.

FIG. 10 is a bottom view of an insulating film of a conventional semiconductor device evaluation probe.

[Explanation of symbols]

 1 Insulating Film 2 Contact Part 3 Evaluated Semiconductor Device 4 Signal Line 5 Grounding Electrode 6 Outer Frame 7 Needle 8 Notch 9 Chip Capacitor 10 Chip Resistor 11 Transducer 12 Through Hole 13 Back Grounding Electrode 14 Hole 15 Hold 15a Hold Support Frame 16 Connection 50 Transducer electrode 60 Probe 71, 72, 73, 74 Probe

Claims (7)

[Claims] 1. A semiconductor device comprising an insulating film having a contact portion on its surface and a wiring portion connected to the contact portion, the contact portion being brought into contact with a pad of the semiconductor device to evaluate the semiconductor device. In the probe, a needle is applied to the back surface of the insulating film provided with the contact portion, the contact portion and the needle are coupled via the film, and each contact portion is pressed by each needle. A probe for evaluating a semiconductor device, comprising: 2. The probe for evaluating a semiconductor device according to claim 1, wherein a notch is provided in a portion between the contact portions of the insulating film. 3. The semiconductor device evaluation probe according to claim 1, wherein a circuit element that constitutes a circuit for testing the semiconductor device is provided on the upper surface or the lower surface of the insulating film. Semiconductor device evaluation probe. 4. The probe for evaluating a semiconductor device according to claim 1, wherein vibration is applied to the upper surface or the lower surface of the insulating film when the semiconductor device is tested. A semiconductor device evaluation probe characterized by comprising a vibrator. 5. The semiconductor device evaluation probe according to claim 1, wherein a ground electrode is provided on a back surface portion of the contact portion on the upper surface of the insulating film. Probe. 6. The probe for evaluating a semiconductor device according to claim 1, wherein a ground electrode is provided on the entire surface of the upper surface of the insulating film including the back surface portion of the contact portion. Semiconductor device evaluation probe. 7. The probe for evaluating a semiconductor device according to claim 5, wherein a needle for pressing the contact portion is connected to the ground electrode.