JPH061765B2 - Vapor-phase reactive coating method - Google Patents

Description

TECHNICAL FIELD The present invention relates to a method for forming a good quality coating film.

[Prior Art] Conventionally, in a CVD apparatus such as a PCVD apparatus, the pressure of the reaction system is as high as 0.05 to 10 torr, so that the exhaust system, etc.
It was only used, and it was completely impossible to install TP etc. that generate a higher degree of vacuum.

[Problems of conventional technology]

However, in the above-mentioned conventional PCVD apparatus, the exhaust system is only VP, and since this VP makes a discontinuous rotary motion, the atmosphere (especially oxygen) from the exhaust system at atmospheric pressure in contact with air is It was found that backflow occurs, and further, a part of this atmosphere is mixed in the oil and revaporized from there, causing backflow into the reaction vessel. Further, therefore, oxygen due to this backflow is mixed in the film to be formed, and for example, when a silicon film is produced, oxygen is 3 × 10 ¹⁹ to 2 × in the film.
It was mixed in at a concentration of 10 ²⁰ cm ^-3 .

Therefore, hydrogen or fluorine is added to such a coating,
What should be a silicon semiconductor has become so called lower silicon oxide.

[Object of the Invention]

An object of the present invention is to prevent the backflow of the atmosphere from the exhaust system to the reaction furnace, which has been a problem in attempting to form a high quality non-film in the conventional technique.

[Structure of Invention]

According to the method for producing a vapor-phase reactive coating film of the present invention, when a reactive gas is reacted in a reaction vessel by a vapor-phase reaction method to form a non-oxygen-based coating film, water and oxide in the reactive gas are added at 0.1 pp.
m or less, and exhaust from the reaction vessel during film formation is performed by a turbo molecular pump of a continuous evacuation system to form a non-oxygen-based film on the substrate in which oxygen or carbon has a concentration of 5 × 10 ¹⁸ cm ^-3 or less. It is characterized by

The method for producing a vapor-phase reactive coating film of the present invention is the first method in which a reactive gas is reacted in a different reaction chamber by a vapor-phase reaction method.
In a method for producing a non-oxygen-based coating composed of a layer, a second layer, and a third layer, when forming the second layer on a silicon semiconductor coating, water and oxides are added to a reaction chamber kept under reduced pressure. ．
A reactive gas adjusted to 1 ppm or less is introduced, and the reaction chamber during the formation of the second layer is separated from other reaction chambers by a gate valve, so that the reactive gas and the reaction products from the reaction chamber during the film formation are removed. It is characterized in that it is discharged by using a turbo molecular pump of a continuous exhaust system.

The present invention, in the production of non-oxygen-based coating, in order to prevent backflow of the atmosphere from the exhaust system, a rotary pump of oil rotation type, a vacuum pump of a discontinuous rotation type such as mechanical booster pump (hereinafter simply referred to as vacuum pump or VP ) Is not used, but a continuous exhaust type turbo molecular pump (hereinafter simply referred to as turbo molecular pump or TP) is interposed between the reaction vessel and the vacuum pump to prevent backflow of the atmosphere from the exhaust system. Is characterized by.

As a result, a non-oxide film such as non-single-crystal silicon
When forming using reactive gas silane (Si ₂ H _{2n + 2} n ≧ 1), the amount of oxygen in the film is 5 × 10 ¹⁸ cm ^-3 or less, preferably 1 × 10 ¹⁸ cm ^-3 or less. Is what you are trying to do.

In the present invention, by interposing the exhaust system with TP between the reaction chamber and VP through a valve for adjusting the pressure of the reaction furnace, the reaction chamber has a plasma gas phase reaction method in a pressure range of 0.05 to 10 torr ( The film is formed by simply using the CVD method hereinafter) and is kept under a pressure of 1 × 10 ^-2 torr or less (generally 10 ^-4 to 10 ^-6 torr) under the pressure control valve so that TP acts. The reaction system has a higher pressure (1 x
The purpose is to form a film by holding at 10 ^-2 torr or more, that is, 0.05 to 10 torr).

Further, according to the present invention, a plurality of reaction chambers are connected to the plasma CVD apparatus, and a P-type non-single crystal semiconductor
The present invention relates to a method for manufacturing a semiconductor device in which an I-type non-single-crystal semiconductor and an N-type non-single-crystal semiconductor are stacked on a substrate to form a PIN junction.

The present invention is shown in the outline of the apparatus in FIG. That is, a doping system for introducing a reactive gas (50) a reaction vessel (51) an exhaust system
It has (52). The reaction vessel has a semiconductor layer as a double reaction vessel type having a reaction space in which an inner surface is formed of an insulator, and a P-type semiconductor (system I in the drawing), I
Multi-chamber PCVD method in which each reaction vessel is connected through a separating part (system II in the drawing) when a junction is formed on a substrate by stacking with a semiconductor type (system III in the drawing) and an N-type semiconductor Is proposed as shown in FIG.

The present invention forms a non-single-crystal semiconductor layer to which hydrogen or a halogen element is added to form a semiconductor layer having P, I and N type conductivity types with a low recombination center density, and a PIN junction at the stacking boundary. And to prevent impurities from other adjacent semiconductor layers from mixing into each semiconductor layer and deteriorating the junction characteristics, and exposing each semiconductor layer to the atmosphere, particularly oxygen, during the process of forming each semiconductor layer. Thus, the present invention relates to a plasma gas phase reaction for performing continuous production in which an interlayer insulator is not formed by oxidizing a part of a semiconductor.

Furthermore, the present invention relates to a so-called mass production method in which a large number of substrates are simultaneously increased in film growth rate in a multi-chamber plasma reaction method in which a large number of such reaction vessels are connected independently in each reaction.

The present invention is 10 cm × 10 cm or 10 to 50 cm in the electrode direction, for example 40
a substrate having a width of 15 to 120 cm, for example 60 cm (4 cm
20 sheets of 0 cm × 60 cm or 20 cm × 60 cm were used for each batch).

In FIG. 1 and FIG. 2, a reactive gas introducing means and an exhausting means are provided, and a supply nozzle and an exhausting nozzle are provided, and a pair of electrodes are provided so as to face the inside of the insulating hood.
(61), (61 '), (62), (62') and reactive gas supply nozzle
(17), (18) and exhaust nozzles (17 '), (18') were arranged. That is, the structure of wrapping the outside of the electrode with the insulator of the hood (39), (39 ')
And Furthermore, in order to confine the reaction space between the hoods, the outer periphery was surrounded by insulators (38) and (38 ').

Further, FIG. 2 shows a drawing showing a cross section of FIG. 1, but an opening / closing door is provided in front of the reaction vessel (on the left side of the drawing) and after (on the right side of the drawing),
On the inner surface of this door, heating means such as halogen lamp (13),
(13 ') is provided.

Embodiments of the present invention will be described below with reference to the drawings.

[Example 1] An example of the plasma vapor phase reaction apparatus of the present invention will be described with reference to Figs.

This drawing shows PIN junction, PIP junction, NIN junction or PIN PIN
..Semiconductor layers on the substrate such as PIN junctions, which are different in conductivity type but have different main components or different stoichiometric ratios from the semiconductor layers formed in the preceding step This is an apparatus for automatically and continuously forming multiple layers to be laminated without being influenced by (mixing) with each other.

In the drawing, a part of a plurality of reaction systems forming the PIN junction is shown. That is, a multi-chamber system having two reaction systems (I, III) formed by stacking P, I and N type semiconductor layers, a first preliminary chamber and a transfer buffer chamber (II). 2 shows an example of the plasma gas phase reaction device.

The systems I, II, and III in the drawing show two reaction vessels (10
1), (103) and a buffer chamber (102), and gate valves (44), (45), (46), (47) between the respective reaction vessels. Independently, the reactive gas supply nozzle (1
It has 7) and (18) and exhaust nozzles (17 ') and (18') so that the reactive gas is provided in a laminar flow from the supply system to the exhaust system.

This apparatus is provided with a first auxiliary chamber (100) on the entrance side, and first inserts two substrates (1) having two surfaces to be formed on two surfaces of the substrate holder (2) from the door (42). I wore it. Further, the holders (3) are arranged at a predetermined equidistant distance from each other by an outer frame jig (only the outer periphery is shown as (38), (38 ')). That is, the substrate having this surface to be formed is in contact with the back surface on which the coating is not formed on the substrate holder (2), and the two substrates and the substrate holder are regarded as one holder (3) with a gap of 6 cm ± 0.5 cm for insulation. It was made to stand in the outer frame jig. As a result, 40 cm x 60 cm
It was possible to form a film on 20 substrates at the same time. Thus, the reaction space (6), (8) with a height of 55 cm, a depth of 80 cm and a width of 80 cm is surrounded by insulators (39), (39 ') on the upper and lower sides, and the periphery of the side is an insulating outer frame jig (38). Surrounded by (38 ').

Fully open the pressure adjustment valve (71) in the first preliminary chamber (100), and
A vacuum was drawn by the vacuum pump (35) through P (86). After this, fully open the pressure adjustment valve (72) and use TP to set the pressure to 3 x 10
^-8 torr or less The reaction vessel (1
(1) Open the gate valve (44) for separation from the outer frame jig (38)
The substrate held in was transferred. For example, the substrate is moved from the preliminary chamber (100) to the first reaction container (101) and then the gate valve (44) is closed to move the substrate to the first reaction container (101).

At this time, the substrate (1) held in the first reaction container (101)
And the like are held in the buffer chamber (102) in advance or at the same time, and the jig and the substrate (2) held in the buffer chamber (102) are the second
The substrate held in the second reaction chamber (103) and the substrate held in the second reaction chamber (103) are placed in the second buffer chamber (104), and although not shown, the substrate of the third reaction chamber The jig can be moved by opening the gate valve in the second auxiliary chamber on the outlet side.

After this, the gate valves (44), (45), (46), (47) were closed.

That is, the movement of the gate valve is such that when the door (42) is opened at atmospheric pressure, the gate valves (44), (45), (46), (47) of the separation unit are closed,
Plasma vapor phase reaction is performed in each chamber. On the contrary, when the door (42) is closed and the auxiliary chamber (100) is sufficiently evacuated, the gate valves (44), (45), (46), (4
7) is opened, and the substrate and jig of each chamber have a mechanism to move to the adjacent chamber so that outside air does not enter the reaction chambers (101) and (102).

The case where the P-type semiconductor layer is formed by the PCVD method in the first reaction vessel (101) in the system I will be described below.

The reaction system I (including the reaction vessel (101)) was 0.01 to 10 torr, preferably 0.01 to 1 torr, for example 0.08 torr.

That is, the pressure control valve (72) is closed, and the reaction vessel (101)
The pressure inside is 0.05-1 torr, and below this valve is 1
X10 ^-2 torr or less Generally, it will be 1 x 10 ^-4 to 1 x 10 ^-7 torr, and this degree of vacuum is achieved by rotating TP (87).
Also, because this continuous exhaust type TP is operating,
The powdery product generated by the VD reaction is added to the reaction vessel 101.
It was possible to prevent the reverse diffusion of polymerized oil of VP (36), and the reverse flow of oxygen, especially the oxygen, for exhaust gas impregnated in the oil.

The reactive gas was supplied by a system I Dopink system (50). That is, as a silicide gas (24), silane (Si _n H _{2n + 2} n> 1) which has been purified and further filled in a stainless steel cylinder, particularly SiH ₄
Alternatively, Si ₂ H ₆ silicon fluoride (SiF ₂ or SiF ₄ ) was used.
Here, ultra-high-purity silane (purity 99.99
%, But water and oxygenates were 0.1 PPM or less).

In order to form Si _x C _1-x (0 <x <1) in this example, DMS (dimethylsilane SiH ₂ (CH ₃ ) ₂ purity 99.99%) was used as the carbide gas (25).

For silicon carbide (Si _x C _1-x 0 <x <1), boron as a P-type impurity is added to the above-mentioned monosilane at 0.5 at the same time.
It was mixed with silane at a concentration of 24% and supplied together with silane.

If necessary, hydrogen (purity 7N or higher) or nitrogen (purity 7N or higher) was supplied from the time (23) when the reaction chamber was brought to atmospheric pressure. These reactive gases are transferred to their respective flow meters (33) and valves (3
After 2), from the reactive gas supply nozzle (17) to the high frequency power supply (1
It was supplied to the reaction space (6) through the negative electrode (61) of 4).

The reactive gas was supplied into the cylindrical space (6) surrounded by the holder (38), and a film was formed on the substrate (1) constituting this space. Further, electric energy, for example, high frequency energy (13.56 MHz) (14) was applied between the negative electrode (61) and the positive electrode (51) to cause a plasma reaction, and a reaction product was formed as a film on the substrate.

The substrate is 100-400 ℃, for example 200 ℃, the reaction vessel shown in Fig. 2.
It was heated by the same means as the infrared heaters arranged before and after (103).

This infrared heater uses a halogen lamp for near infrared rays (emission wavelength of 1 to 3 µ) or a far infrared ceramic heater (emission wavelength of 8 to 25 µ), and a cylindrical space surrounded by a holder in the reaction vessel is 200 It is set within ± 10 ° C, preferably within ± 5 ° C.

After this, as described above, the reactive gas described above was introduced into this container, and high-frequency energy was further increased to 10 to 500 W, for example 100 W.
(14) was supplied to cause a plasma reaction.

Thus, the P-type semiconductor layer is B ₂ H ₆ / SiH ₄ = 0.5%, DMS / (SiH
₄ + DMS) = 10%, the average film thickness of 30 ~
It was formed as a thin film having a thickness of 300Å, for example, about 100Å. Eg = 2.05 eVσ = 1 × 10 ^{−6 to} 3 × 10 ⁻⁵ (Ωcm) ⁻¹ .

The substrate is a conductor substrate (stainless steel, titanium, aluminum
System, other metals), semiconductors (silicon, germanium)
Film), insulator (glass, organic thin film) or composite substrate (glass or translucent organic resin with a fluorine-containing translucent conductive film such as tin oxide, ITO is a single layer or ITO.
A two-layer film having SnO ₂ formed thereon was used). These are collectively referred to as a substrate not only in this embodiment but also in all of the present invention. Of course, this substrate may be flexible or a rigid plate.

Thus, the plasma vapor phase reaction was carried out for 1 to 5 minutes to form a silicon carbide film to which boron was added as a P-type impurity in a thickness of about 100Å. Further, the substrate on which the first semiconductor layer was formed was moved to the buffer chamber (102) by opening the gate (45) and following the above-mentioned operation sequence, and the gate (45) was closed. The buffer chamber (102), a cryopump below advance 10 ^-8 torr (8
Vacuum is evacuated in 8). The buffer room 102 is a CV
Since the D reaction is not performed, a cryopump can be used instead of the turbo molecular pump.

In addition, this substrate is 1 × 10 ^-7 t by TP (89) as in system III.
It was transferred to the reaction vessel held below orr via opening and closing of the gate (46).

That is, in the reaction system III in FIG. 1, ultra-high-purity monosilane or disilane is used as the reactive gas of the semiconductor (water or silicon oxide, the concentration of the oxide gas is 0.1 PPM or less) (28)
Furthermore, in order to add boron of 10 ¹⁷ cm ^-3 or less, hydrogen, B ₂ H ₆ diluted to 0.5 to 30 PPM with silane etc. (27)
Further, the carrier gas was supplied from (26) as required.

The reactive gas flows downward from above along the formation surface of the substrate (1) and reaches the TP (89). FIG. 2 is a vertical sectional view of the system III as seen from the outlet side.

Figure 2 is outlined.

FIG. 2 shows a vertical sectional view of the reaction system III in FIG.

In the drawing, rod heaters (13) and (13 ') are rod-shaped halogen lamps. The reaction space is 100-400 ℃ depending on the heater
For example, it was set to 250 ° C.

The board (1) is held by the board holder (2) and the outer frame jigs (38), (3
The confinement space (8) is composed of 8 ').

In the reaction chamber (103) shown in FIG. 2, the I phase was made to have a thickness of 5000 Å under the following conditions: SiH ₄ 60 cc / min, film formation rate 2.5 Å /
Second, the substrate (20 cm × 60 cm, 20 sheets, total area 24000 cm ² ) was formed with a pressure of 0.1 torr.

When Si ₂ H ₆ was used as the reaction gas, the film formation rate was 28 Å / sec.

Thus, in the first reaction chamber, the P-type semiconductor layer was formed by the plasma vapor phase method, and then the I-type semiconductor layer was formed by the PCVD method to form the PI junction.

Next, the substrate on which the I layer was formed to a thickness of 5000 Å in the system III was transferred to the adjacent buffer chamber (104) according to the above-mentioned operation, and further transferred to the adjacent reaction chamber, and the same PCVD process was used to perform N A type semiconductor layer was formed.

This N-type semiconductor layer is made of PH ₃ / S
iH ₄ = 1.0% silane and carrier gas hydrogen SiH ₄ /
H ₂ = 20% is supplied to form a polycrystalline semiconductor layer having an N-type microcrystalline or fibrous structure in a thickness of about 200Å in the same manner as in the system I, and silicon carbide is further formed on the upper surface thereof. To
Si _x C _1-x (0 <x <1) with DMS / (SiH ₄ + DMS) = 0.1
The N-type semiconductor layer indicated by 10 to 200 Å, for example 50 Å
It is formed by laminating to the thickness of. Other reactors are the same as those in system I.

After such a step, ITO having a thickness of 100 to 1500 Å is further formed on the substrate formed by forming a PIN junction outside the second preliminary chamber, and a reflective or sublimable metal electrode such as an aluminum electrode is further formed thereon. Was formed to a thickness of about 1 μm by a vacuum vapor deposition method, and (ITO + SnO ₂ ) front surface electrode- (PIN semiconductor)-(back surface electrode) was formed on the glass substrate.

The characteristics of the photoelectric conversion device are 7-9%, 8% on average 10
In the substrate of cm × 10 cm under conditions of AM1 (100mW / cm ²⁾ has as intrinsic efficiency characteristics, and the hybrid are integrated
Even on a 40 cm x 60 cm glass substrate, 5.5% could be obtained with an effective efficiency.

As a result, the open circuit voltage is 0.85 to 0.9V (0.87 ± 0.0V) with one device.
However, the short circuit current is as large as 18 ± ² mA / cm ² , the FF is as large as 0.60 to 0.70, and the variation is small in the panel and in the batch, and the method of the present invention is industrially extremely effective. It turned out to be.

FIG. 3 shows the concentration distribution of oxygen and carbon impurities in the semiconductor in the PIN photoelectric conversion device manufactured by the present invention and the conventional method.

The drawing shows the aluminum back electrode (94), N-type semiconductor (93),
The I-type semiconductor (92), the P-type semiconductor (91), and the tin oxide translucent conductive film (90) on the substrate are shown respectively.

When the conventional exhaust system uses only rotary pumps or mechanical booster pumps, TP of continuous exhaust system is not used, so carbon (95) and oxygen (9)
It contained a high concentration of impurities shown in 6).

Especially for oxygen, 5 × 10 ¹⁹ to 2 × 10 ²⁰ cm ^-3 is an I-type semiconductor (92).
Had in. The drawing shows the case of containing 5 × 10 ¹⁹ cm ^-3 of oxygen. In addition, the carbon had 5 × 10 ²⁰ to 4 × 10 ²⁰ cm ⁻³ due to the reverse flow of the oil component from the oil rotary pump. The drawing is for the case of 1 × 10 ²⁰ cm ^-3 .

On the other hand, in the exhaust system as shown in the present invention, the carbon concentration has 1 × 10 ^{17 to} 5 × 10 ¹⁸ cm ^-3 as shown by the curve (98), and generally contains 1 × 10 ¹⁸ cm ^-3 or less. I can't. In addition, the oxygen concentration is also 5 × 10 ¹⁸ cm ^-3 or less, preferably 1 × 10 ¹⁸ cm ^-3 or less, as shown by the curve (97).
^It shows the case of ¹⁸ cm ^-3 .

In FIG. 3, the back electrode (94) has an aluminum 3
It has ~ 6 × 10 ²⁰ cm ^-3 of oxygen. Therefore, this oxygen is SIMS (secondary ion analysis method) (using Kameka Co. 3F type)
It is considered that in the measurement, the oxygen in the background became oxygen and the oxygen in the N-type semiconductor (93) became 10 ¹⁸ to 10 ²⁰ cm ⁻³ .

In addition, there are impurities in the P-type semiconductor due to oxygen and water contained in DMS, and the silane is refined from this starting material into oxygen or oxides of 0.1 PPM or less to further reduce the oxygen concentration. It is possible to estimate the possibility.

Regarding the type of semiconductor to be formed, not only Si but also others
Group IV Ge, Si _x C _1-x (0 <x <1), Si _x G _1-x (0 <x <
1), Si _x Sn _1-x (0 <x <1), single layer or multi-layer, and other than these, non-oxygenated compounds such as compound semiconductors such as GaAs, GaAlAs, BP, CdS It goes without saying that it is good.

The present invention has shown a PCVD method in a multi-chamber system using three reaction vessels. But with this as one reaction vessel,
Therefore, silicon nitride is converted into silane (SiH ₄ or Si ₂ H
₆ ) It is effective to form by a PCVD reaction of ammonia (NH ₃ ).

The non-single crystal semiconductor film formed by the present invention is also effective for N (source) I (channel forming region) N (drain) junction or PIP junction in an insulating gate type field effect semiconductor device. Furthermore, it is a PIN diode with an energy band width of WNW (WIDE-NALLOW-WIDE) or Si _x C
A PIN junction type visible light laser, a light emitting element, or a photoelectric conversion device having a _1-x -Si-Si _x C _1-x (0 <x <1) structure may be manufactured. In particular, a so-called W (P or N type) -N having a heterojunction structure with a large energy band width on the light incident light side.
(I type) (WIDE TO NALLOW) and in each reaction chamber, not only the conductive type but also different products can be independently produced and laminated, which is industrially very important. I believe there is.

In the present invention, the separating portion is not simply a gate valve,
It was effective to provide two gate valves and one buffer chamber as the system II to further prevent impurities of the P-type semiconductor from mixing into the I-type semiconductor layer and improve the characteristics.

It goes without saying that the plasma CVD apparatus of the present invention can be applied to a single chamber or multi-chamber system having another structure.

The embodiment of the present invention is a multi-chamber method shown in FIG. 1, and the PCVD method is supplied to all the reaction vessels.
However, if necessary, a part or all of the composite coating may be formed by adopting an optical CVD method that does not use plasma, an LT CVD method (also referred to as a HOMO CVD method), or a low pressure CVD method.

[Brief description of drawings]

FIG. 1 and FIG. 2 show the outline of a plasma vapor phase reaction coating production apparatus for carrying out the present invention. FIG. 3 shows the distribution of impurities in a semiconductor device manufactured by the present invention and the conventional method (50) ... Doping system introducing a reactive gas (51) ... Reaction vessel (52) ... Exhaust system (61), (61 '), (62), (62') ・ ・ ・ Electrodes (17), (18) ・ ・ ・ Reactive gas supply nozzles (17 '), (18')・ Reactive gas exhaust nozzles (14), (15) ・ ・ ・ High frequency energy sources (38), (38 '), (39), (39') ・ ・ ・ Insulators (13), (13 ') ... Heating means such as halogen lamps (101), (103) ... Reaction vessels (102) (104) ... Buffer chamber vessels (44), (45), (46), (47)・ Gate valve (100) ・ ・ ・ Spare chamber (42) ・ ・ ・ Spare chamber door (5) ・ ・ ・ Spare chamber space (2) ・ ・ ・ Substrate holder (1) ・ ・ ・ Substrate (6) ・ ・ ・Reaction space of the first reaction chamber (8) ... Reaction space of the second reaction chamber (7), (9) ... Buffer chamber space (71), (72), (73), (74)・ ・ ・ Pressure control valve (86), (87), (88), (89) ・ ・ ・ Turbo molecular pump (34), (35), (36 ), (37) ・ ・ ・ Vacuum pump

Continuation of front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 31/04

Claims (2)

[Claims] 1. When reacting a reactive gas in a reaction vessel by a plasma gas phase reaction method to form a silicon film, water and oxide in the reactive gas are adjusted to 0.1 ppm or less, and a reaction during film formation is performed. In order to evacuate the vessel with a turbo molecular pump of a continuous evacuation system, the pressure inside the reaction vessel is adjusted to 0.01 to 10 torr by adjusting a valve provided between the turbo molecular pump and the reaction vessel.
A method for producing a vapor-phase reactive coating film, comprising forming a silicon coating film having a concentration of oxygen or carbon of 5 × 10 ¹⁸ cm ⁻³ or less as measured by SIMS (secondary ion analysis method) on a substrate. 2. A first layer, a second layer, and a third layer, which are obtained by reacting a reactive gas by a plasma gas phase reaction method in different reaction chambers.
In the method for producing a semiconductor coating film consisting of at least one layer containing silicon, in the formation of the at least one layer, a reaction chamber kept under a reduced pressure has a reactivity of water and oxides of 0.1 ppm or less. Introduce a gas, the second
In order to separate the reaction chamber during layer formation from other reaction chambers by a gate valve, and to discharge the reactive gas and reaction products from the reaction chamber during film formation using a turbo molecular pump of continuous exhaust system. A method for producing a gas phase reaction coating, wherein the pressure inside the reaction vessel is set to 0.01 to 10 torr by adjusting a valve provided between the turbo molecular pump and the reaction vessel.