JPH061796B2 - Method of manufacturing thin film device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for manufacturing a thin film device.

(Prior Art) In recent years, there has been remarkable progress in the development of display devices using thin films. At present, display devices using electroluminescence, liquid crystal, etc. are commercialized, and the display area is increasing. As the display area increases,
The number of screens increases, and the number of portions where the upper and lower wirings intersect with each other via the inorganic insulating layer increases. On the other hand, it is very difficult to form a uniform and pinhole-free inorganic insulating layer in a large area, and an interlayer short circuit occurs at the intersection of wirings.

As a countermeasure against this, conventionally, as shown in FIG. 4, an anodizable metal such as tantalum is used as the first conductor layer (2) on the substrate (1), and an anodized film (3) is formed on this surface. Is formed, and the inorganic insulating layer (4) and the second conductor layer (5) are sequentially laminated on this.

As another method, as shown in FIG. 5, the same anodizable metal is used as the first conductor layer (11) on the substrate (10), and the inorganic insulating layer (12) is formed thereon. After that, anodic oxidation treatment is applied and only the anodic oxide film (1
4) is formed, and then the second conductor layer (15) is further formed thereon.

(Problems to be Solved by the Invention) However, in any of the methods, since anodization is performed, usable metals are limited, materials that can be used are restricted, and there are drawbacks such as a complicated process. Have.

The present invention is a method for manufacturing a thin film device which can obtain a high yield by eliminating pinholes in an interlayer insulating film by a simple process without selecting a metal material.

[Structure of Invention]

(Means for Solving the Problems) The present invention relates to a second conductor layer which is arranged on a first conductor layer formed on a substrate with at least a first inorganic insulating layer and a second inorganic insulating layer interposed therebetween. A method of manufacturing a thin-film device comprising: a surface treatment step of removing dust and abnormal growth portions on the surface of the first inorganic insulating layer after the formation of the first inorganic insulating layer; And a step of forming two inorganic insulating layers.

(Function) For example, mechanical surface treatment using a brush scrubber eliminates pinholes easily and there is no need to select a material for the conductor layer.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings, taking a case where a thin film device is a thin film transistor (hereinafter referred to as TFT) array as an example.

FIG. 2 is a plan view showing several pixels of the TFT array to which this embodiment is applied. As you can see from the figure, the gate line
The signal line (21) and the signal line (21) are orthogonal to each other, and a TFT (22) and a number electrode (23) connected to the TFT (22) are formed in a region surrounded by these lines.

FIG. 3 is a cross-sectional view when the line AB of FIG. 2 is viewed in the arrow direction. In the figure, for example, a substrate made of glass
A gate electrode is sequentially formed on the (30) as the first conductor layer (31), and a gate insulating film is further formed as the inorganic insulating layer (32) so as to cover the gate electrode. And the first conductor layer on the inorganic insulating layer (32)
A semiconductor layer (33) made of, for example, amorphous silicon is formed at a position corresponding to (31), and a second conductor layer (34) is further formed.
A pixel electrode connected to the source electrode (35), the drain electrode (36), and the source electrode (35) so that the semiconductor layer (33) is sandwiched between them.
(37) is formed. Source and drain electrodes (3
Between the semiconductor layers (5) and (36) and the semiconductor layer (33), for example, an ohmic contact layer made of amorphous silicon containing phosphorus.
(38) is intervening.

Next, an embodiment of the present invention will be described with reference to FIG. First, as shown in FIG. 1 (a), for example, C on the substrate (30).
First consisting of r 1. The conductor layer (31) is formed to a thickness of about 1500Å. Next, the inorganic insulating layer (32) is formed, for example, by a plasma CVD method in a plurality of times, for example, in two steps. That is,
First, as shown in FIG. 1 (b), a first inorganic insulating layer (321) made of, for example, SiO _{2 is formed} to cover the first conductor layer (31) by about 150.
Form to a thickness of 0Å. Next, as a mechanical surface treatment on the first inorganic insulating layer (321), dust attached to the first inorganic insulating layer (321) and abnormal growth portions are removed by, for example, a brush scrubber or a jet scrubber. continue,
As shown in FIG. 1 (c), a second inorganic insulating layer (322) made of, for example, SiO ₂ is formed on the first inorganic insulating layer (321) to a thickness of about 1500 Å, and the inorganic layer thus completed is formed. A semiconductor layer (33) having a thickness of about 3000Å and an ohmic contact layer (38) having a thickness of about 500Å are sequentially formed on the insulating layer (32) by, for example, a plasma CVD method. The semiconductor layer (33) and the ohmic contact layer (38) are formed of a photoresist (40) as shown in FIG. 1 (d).
To form a predetermined pattern. Then photoresist (4
After peeling off (0), as shown in FIG.
Approximately 1000 pixel electrodes (37) made of O (Indium Tin Oxide)
It is formed to a thickness of Å, for example, by sputtering, and a predetermined pattern is formed using a photoresist (41). Then, after removing the photoresist (41), for example, Al is deposited to a thickness of about 1 μm by a sputtering method, and then the photoresist is used to form a source and a predetermined pattern as shown in FIG. 1 (f). While forming the drain electrodes (35) and (36), a part of the ohmic contact layer (38) is etched by using the source and drain electrodes 35) and (36) as a mask. Thus, a desired thin film device is obtained.

In this embodiment, the first inorganic insulating layer (321) is subjected to mechanical surface treatment during each step of forming the inorganic insulating layer (32), that is, after forming the first inorganic insulating layer (321). Since the dust and the abnormal growth portion on the top are removed, the inorganic insulating layer (32) has no pinhole caused by these. As a result,
Gate line (20) connected to the first conductor layer (31) Drain electrode (3
The short circuit due to the pinhole of the inorganic insulating layer (32) between the signal line (21) connected to 6) and the signal line (21) disappeared, and the TFT array can be manufactured with a high yield.

Although the thin film device is a TFT array here, the invention is not limited to this, and the present invention can be applied to any device having an interlayer inorganic insulating film. Also an inorganic insulating layer
Although (32) is formed in two steps, the present invention is not limited to this, and it may be formed in several steps of layers made of different materials.

〔The invention's effect〕

In summary, since the present invention forms the inorganic insulating layer between the conductor layers by dividing it into a plurality of steps and performs the mechanical surface treatment between the steps, the pinholes generated in the inorganic insulating layer are reduced. Therefore, a thin film device with good performance can be obtained.

[Brief description of drawings]

1 is a process sectional view showing an embodiment of the present invention, FIG. 2 is a plan view showing an example of a TFT array to which the present invention is applied,
FIG. 3 is a cross-sectional view of FIG. 2 taken along the line AB, and FIGS. 4 and 5 are cross-sectional views showing an example of a conventional method for manufacturing a thin film device. (30) ... Substrate (31) ... First conductor layer (32) ... Inorganic insulating layer (34) ... Second conductor layer

Continuation of front page (56) References JP-A-51-36082 (JP, A) JP-A-51-9259 (JP, A) JP-A-61-97946 (JP, A)

Claims (1)

[Claims] 1. A method of manufacturing a thin film device, comprising: a first conductor layer formed on a substrate; and a second conductor layer disposed at least through a first inorganic insulating layer and a second inorganic insulating layer. A surface treatment step of removing dust and abnormal growth portions on the surface of the first inorganic insulating layer after forming the first inorganic insulating layer; and a step of forming a second inorganic insulating layer on the first inorganic insulating layer. And a method for manufacturing a thin film device.