JPH06188643A - High-frequency low-noise amplifier - Google Patents
High-frequency low-noise amplifierInfo
- Publication number
- JPH06188643A JPH06188643A JP28263392A JP28263392A JPH06188643A JP H06188643 A JPH06188643 A JP H06188643A JP 28263392 A JP28263392 A JP 28263392A JP 28263392 A JP28263392 A JP 28263392A JP H06188643 A JPH06188643 A JP H06188643A
- Authority
- JP
- Japan
- Prior art keywords
- band
- fet
- resistor
- noise amplifier
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 230000010355 oscillation Effects 0.000 abstract description 7
- 230000002238 attenuated effect Effects 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Amplifiers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は高周波低雑音増幅器に関
し、特に増幅用デバイスにトランジッション周波数（ｆ
ｔ）の高い電界効果トランジスタを用いた場合でも、安
定な増幅特性が得られる高周波低雑音増幅器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency low-noise amplifier, and more particularly to a device for amplifying a transition frequency (f).
The present invention relates to a high frequency low noise amplifier which can obtain stable amplification characteristics even when a field effect transistor having a high t) is used.
【０００２】[0002]
【従来の技術】従来、この種の高周波低雑音増幅器は図
２に示される様に、入力端子５から入力される受信信号
がコンデンサ７を経由して電界効果トランジスタ４のゲ
ートＧに供給される。ここでハイインピーダンス線路
９、コンデンサ１１、ゲート電圧端子１３はＦＥＴ４に
ゲート電圧を供給する回路である。また、ハイインピー
ダンス線路１０、コンデンサ１２、ドレイン電圧用端子
１４はＦＥＴ４にドレイン電圧を供給する回路である。
インダクタンス１５は後述するＦＥＴ４の安定指数改善
用のコイルである。受信信号はＦＥＴ４により増幅され
て、コンデンサ８を介して出力端子６に増幅された出力
が得られる。次にインダクタンス１５の機能を図３の特
性図により説明する。インダクタンス１５は使用周波数
の帯域内でＦＥＴの安定化指数Ｋを改善するために、Ｆ
ＥＴのソース電極をインダクタンス１５を介し接地して
いる。図３はインダクタンス１５がある場合と、ない場
合のＦＥＴ４の安定化指数Ｋの周波数特性を示す。イン
ダクタンス１５なしの高ＦｔのＦＥＴの安定化指数Ｋを
点線とし使用帯域を２ＧＨｚ帯とすると、Ｋ＜１となる
ので不安定状態となり、帯域内での異常発振が起こりや
すくなる。インダクタンス１５を入れることにより、帯
域内での安定化指数を実線のように改善することができ
る。2. Description of the Related Art Conventionally, in this type of high frequency low noise amplifier, as shown in FIG. 2, a reception signal input from an input terminal 5 is supplied to a gate G of a field effect transistor 4 via a capacitor 7. . Here, the high impedance line 9, the capacitor 11, and the gate voltage terminal 13 are circuits that supply a gate voltage to the FET 4. The high impedance line 10, the capacitor 12, and the drain voltage terminal 14 are circuits that supply the drain voltage to the FET 4.
The inductance 15 is a coil for improving the stability index of the FET 4 described later. The received signal is amplified by the FET 4 and the amplified output is obtained at the output terminal 6 via the capacitor 8. Next, the function of the inductance 15 will be described with reference to the characteristic diagram of FIG. In order to improve the stabilization index K of the FET within the frequency band of use, the inductance 15 is F
The source electrode of ET is grounded via the inductance 15. FIG. 3 shows the frequency characteristics of the stabilization index K of the FET 4 with and without the inductance 15. If the stabilization index K of the high Ft FET without the inductance 15 is set to a dotted line and the used band is set to the 2 GHz band, K <1 and an unstable state occurs, and abnormal oscillation easily occurs in the band. By inserting the inductance 15, the stabilization index in the band can be improved as shown by the solid line.
【０００３】[0003]
【発明が解決しようとする課題】この従来の高周波低雑
音増幅器は、帯域内ではＫ＞１となるのでＦＥＴは安定
に動作する。しかしながら帯域外ではソースのインダク
タンスによりＫ＜１となるので、その周波数帯になんら
かの利得がある場合に異常発振が起こる欠点があった。
この帯域外の異常発振を止める方法として電波吸収体を
ＦＥＴのゲートドレイン部のリードに固着する方法があ
るが、この方法では設計性及び作業性が悪く、かつ帯域
内の利得も低下するという欠点があった。In this conventional high frequency low noise amplifier, K> 1 in the band, so that the FET operates stably. However, since K <1 due to the inductance of the source outside the band, there is a drawback that abnormal oscillation occurs when there is some gain in that frequency band.
As a method of stopping the abnormal oscillation outside the band, there is a method of fixing the electromagnetic wave absorber to the lead of the gate drain part of the FET, but this method has a drawback that the design and workability are poor and the gain within the band is lowered. was there.
【０００４】[0004]
【課題を解決するための手段】本発明の高周波低雑音増
幅器は、高周波増幅用半導体素子のソースと接地間にイ
ンダクタンスを有する高周波低雑音増幅器において、前
記半導体素子のゲート側をコンデンサとコイルと抵抗と
からなる直列共振回路を介し接地することを特徴とす
る。A high-frequency low-noise amplifier of the present invention is a high-frequency low-noise amplifier having an inductance between the source of a high-frequency amplifying semiconductor element and ground, and the gate side of the semiconductor element is a capacitor, a coil and a resistor. It is characterized in that it is grounded through a series resonance circuit consisting of.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の回路図である。図１にお
いて図２の従来例と同一の符号は同一の機能を有する。
すなわち、本実施例ではＦＥＴ４のゲートと接地間にコ
ンデンサ１、コイル２、抵抗３を直列接続している。The present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of an embodiment of the present invention. 1, the same reference numerals as those in the conventional example of FIG. 2 have the same functions.
That is, in this embodiment, the capacitor 1, the coil 2 and the resistor 3 are connected in series between the gate of the FET 4 and the ground.
【０００６】次に本実施例の動作を説明する。前述のよ
うにＦＥＴ４のソースをインダクタンス１５を介して接
地することにより帯域内での異常発振を防いでいる。こ
こで、コンデンサ１、コイル２、抵抗３は直列共振回路
を構成し、主に帯域外でＫ＜１となる場合の利得を抵抗
３で減衰させ帯域外の異常発振を防止している。帯域内
ではコンデンサ１のインピーダンスが非常に高くなるよ
うな値にすることで抵抗３の抵抗分を相殺している。Next, the operation of this embodiment will be described. As described above, the source of the FET 4 is grounded via the inductance 15 to prevent abnormal oscillation within the band. Here, the capacitor 1, the coil 2, and the resistor 3 form a series resonance circuit, and the resistor 3 mainly attenuates the gain when K <1 outside the band to prevent abnormal oscillation outside the band. Within the band, the resistance of the resistor 3 is canceled by setting the value of the impedance of the capacitor 1 to be extremely high.
【０００７】[0007]
【発明の効果】以上説明したように本発明は、ＦＥＴの
入力側に帯域外の利得を減衰させる直列共振回路を接地
端子との間に構成することにより、雑音指数を悪化させ
ることなく、また利得を失うことなく安定にＦＥＴを動
作させることができる効果を有する。As described above, according to the present invention, a series resonance circuit for attenuating an out-of-band gain is formed between the input side of the FET and the ground terminal so that the noise figure is not deteriorated. The FET can be operated stably without losing the gain.
【図１】本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.
【図２】従来の高周波低雑音増幅器の回路図である。FIG. 2 is a circuit diagram of a conventional high frequency low noise amplifier.
【図３】従来のＦＥＴのソース端子のインダクタンスと
安定化指数との関係を示す特性図である。FIG. 3 is a characteristic diagram showing a relationship between a source terminal inductance of a conventional FET and a stabilization index.
１，７，８，１１，１２ コンデンサ ２ コイル ３ 抵抗 ４ ＦＥＴ ５ 入力端子 ６ 出力端子 ９〜１０ ハイインピーダンス線路 １３ ゲート電圧用端子 １４ ドレイン電圧用端子 １５ インダクタンス 1,7,8,11,12 Capacitor 2 Coil 3 Resistance 4 FET 5 Input terminal 6 Output terminal 9-10 High impedance line 13 Gate voltage terminal 14 Drain voltage terminal 15 Inductance
Claims (3)
間にインダクタンスを有する高周波低雑音増幅器におい
て、前記半導体素子のゲート側をコンデンサとコイルと
抵抗とからなる直列共振回路を介し接地することを特徴
とする高周波低雑音増幅器。1. A high frequency low noise amplifier having an inductance between a source of a high frequency amplifying semiconductor element and ground, wherein a gate side of the semiconductor element is grounded via a series resonance circuit including a capacitor, a coil and a resistor. And high frequency low noise amplifier.
であることを特徴とする請求項１記載の高周波低雑音増
幅器。2. The high frequency low noise amplifier according to claim 1, wherein the semiconductor element is a field effect transistor.
域外で増幅器の利得を減衰させるように作用し、前記直
列共振回路のコンデンサが使用周波数帯域内で前記抵抗
よりハイインピーダンスとなるように作用することを特
徴とする請求項１記載の高周波低雑音増幅器。3. The resistor of the series resonant circuit acts to attenuate the gain of the amplifier outside the frequency band used, and the capacitor of the series resonant circuit acts to have a higher impedance than the resistor within the frequency band used. The high frequency low noise amplifier according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28263392A JPH06188643A (en) | 1992-10-21 | 1992-10-21 | High-frequency low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28263392A JPH06188643A (en) | 1992-10-21 | 1992-10-21 | High-frequency low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06188643A true JPH06188643A (en) | 1994-07-08 |
Family
ID=17655062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28263392A Pending JPH06188643A (en) | 1992-10-21 | 1992-10-21 | High-frequency low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06188643A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205329A (en) * | 1996-01-26 | 1997-08-05 | Nec Eng Ltd | Low noise amplifier |
| WO2001003290A1 (en) * | 1999-06-30 | 2001-01-11 | Mitsubishi Denki Kabushiki Kaisha | Microwave amplifier |
| JP2005064747A (en) * | 2003-08-08 | 2005-03-10 | Murata Mfg Co Ltd | High frequency amplifier |
| JP2007329618A (en) * | 2006-06-07 | 2007-12-20 | Fujitsu Ltd | amplifier |
| JP2008211477A (en) * | 2007-02-26 | 2008-09-11 | Fujitsu Ltd | Amplifier circuit |
| JP2010081249A (en) * | 2008-09-25 | 2010-04-08 | Toshiba Corp | Stabilization circuit and semiconductor device having stabilization circuit |
| JP2011199338A (en) * | 2010-03-17 | 2011-10-06 | New Japan Radio Co Ltd | Amplifier |
| WO2017169645A1 (en) * | 2016-03-30 | 2017-10-05 | 株式会社村田製作所 | High-frequency signal amplifying circuit, power amplifying module, front-end circuit and communication device |
-
1992
- 1992-10-21 JP JP28263392A patent/JPH06188643A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09205329A (en) * | 1996-01-26 | 1997-08-05 | Nec Eng Ltd | Low noise amplifier |
| WO2001003290A1 (en) * | 1999-06-30 | 2001-01-11 | Mitsubishi Denki Kabushiki Kaisha | Microwave amplifier |
| US6310517B1 (en) | 1999-06-30 | 2001-10-30 | Mitsubishi Denki Kabushiki Kaisha | Microwave amplifier |
| JP2005064747A (en) * | 2003-08-08 | 2005-03-10 | Murata Mfg Co Ltd | High frequency amplifier |
| JP2007329618A (en) * | 2006-06-07 | 2007-12-20 | Fujitsu Ltd | amplifier |
| JP2008211477A (en) * | 2007-02-26 | 2008-09-11 | Fujitsu Ltd | Amplifier circuit |
| JP2010081249A (en) * | 2008-09-25 | 2010-04-08 | Toshiba Corp | Stabilization circuit and semiconductor device having stabilization circuit |
| US8427248B2 (en) | 2008-09-25 | 2013-04-23 | Kabushiki Kaisha Toshiba | Stabilization network and a semiconductor device having the stabilization network |
| JP2011199338A (en) * | 2010-03-17 | 2011-10-06 | New Japan Radio Co Ltd | Amplifier |
| WO2017169645A1 (en) * | 2016-03-30 | 2017-10-05 | 株式会社村田製作所 | High-frequency signal amplifying circuit, power amplifying module, front-end circuit and communication device |
| CN109075751A (en) * | 2016-03-30 | 2018-12-21 | 株式会社村田制作所 | High-frequency signal amplifying circuit, power amplifier module, front-end circuit and communication device |
| US10389310B2 (en) | 2016-03-30 | 2019-08-20 | Murata Manufacturing Co., Ltd. | Radio-frequency signal amplifier circuit, power amplifier module, front-end circuit, and communication device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20010424 |