JPH0619112A - Production of phase shift mask - Google Patents

Abstract

PURPOSE:To shorten the time for production by patterning a resist for patterning a shifter to a shape which itself is usable as the shifter, then making inspection. CONSTITUTION:A light shielding film 2 is formed on a glass substrate 3 and is patterned. A shifter material 1 is then formed thereon and a resist 4 is applied thereon. The resist is exposed and developed (so-called patterning) to form the resist 4 to the shape which is usable as the shifter. The inspection is made in the state of having such structure. Then, the removal of the resist 4 and the reapplication thereof are merely necessitated and there is no need for forming the shifter from the shifter material 1 if a defect is discovered at this time. The shorter production process is, therefore, necessitated. This resist is usable as a phase shift mask in the state of the as-inspected structure and, therefore, the use of the resist once in this state in case of a short delivery time or the like and the patterning of the shifter material 1 to the final structure after a time allowance is obtd. are feasible as well.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a phase shift mask used for manufacturing a semiconductor device or the like, and more particularly to a method centering on a shifter correction step.

[0002]

2. Description of the Related Art As is well known, a phase shift mask is used as a patterning mask in a lithography process in manufacturing a semiconductor device or the like, and its structure is on a glass substrate 3 as shown in FIG. A light-shielding film (generally made of chrome: Cr) 2 is patterned and formed on top of which a shifter (generally made of SOG (spin on glass) or the like) is provided so as to partially overlap the light-shielding film 2.
Are formed.

In the manufacture of such a phase shift mask, first, a light shielding film material is formed on the glass substrate 3 and patterned to form a light shielding film 2, a shifter material is formed on the light shielding film 2 and patterned. The shifter 1 is formed. As a matter of course, for patterning, a resist is applied and patterned, the light-shielding film 2 and the shifter 1 are patterned using the resist as a mask, and then the resist is removed. Conventionally, the inspection of the thus manufactured phase shift mask is performed after the shifter 1 is formed, that is, after the phase shift mask is completely formed.

[0004]

However, in the above-described manufacturing method, when the shifter needs to be modified (this modification is quite frequent), the shifter must be formed again, and the time required for the manufacturing is increased. There was a problem that it becomes longer.

SUMMARY OF THE INVENTION The present invention aims to shorten the manufacturing time by performing an inspection after patterning a resist for patterning a shifter in order to eliminate the above-mentioned long manufacturing time of the phase shift mask. It is what

[0006]

To achieve the above object, in the present invention, in manufacturing a phase shift mask, a resist for patterning a shifter is formed into a shape (film thickness) which itself can be used as a shifter. After that, that is, before the completion of the phase shift mask using the shifter material as the shifter as in the conventional case, the inspection is performed.

[0007]

As described above, according to the present invention, the resist for patterning the shifter is inspected after the resist is patterned so that it can be used as a shifter, and if a defect is found at that time, the resist is removed. Therefore, the manufacturing process can be shortened.

Further, since the constitution at this time can be used as a phase shift mask (the resist can be used as a shifter), in the case of a short delivery time, it is used as it is, and the shifter material is used after there is a time margin. It is also possible to perform patterning to remove the resist to form a final phase shift mask.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A manufacturing process of an embodiment of the present invention is shown in FIG. 1 and will be described below.

First, as shown in FIG. 1A, a light-shielding film (made of Cr) 2 is formed on a glass substrate 3 and patterned as in the conventional case. Next, a shifter material (material is SOG) 1 having a thickness of 4240Å is formed thereon, and a resist 4 (SAL601 ER4 manufactured by Shipley Co., Ltd.) having a thickness of 3040Å is applied thereon. Then, exposure is performed, and 125
PEB (Post Exposure Ba)
ke) and develop (so-called patterning),
As shown in FIG. 1B, the resist 4 is formed in a shape usable as a shifter.

Since the refractive indexes of the resist 4 and the light-shielding film (SOG) 2 are 1.6 and 1.43, respectively, both of them can be used as shifters if they have the above-mentioned film thicknesses. That is, the structure of FIG. 1B can be used as it is as a phase shift mask.

Therefore, if the inspection is performed in this state, it is equivalent to the inspection after the shifter material 1 is patterned as shown in FIG. 1C, that is, after the final phase shift mask is formed.

[0013]

As described above, according to the present invention, the resist for patterning the shifter is inspected after being patterned into a shape that can be used as a shifter by itself, so that a defect at this time is detected. If found, the resist only needs to be removed and re-coated, that is, it is not necessary to re-form the shifter material (SOG) as in the conventional case, and the manufacturing process can be shortened.

Further, since the resist itself has a shape that can be used as a shifter, it can be used as a phase shift mask without changing the structure at the time of the inspection. Therefore, in the case of a short delivery time, it is possible to use it in this state once and allow the shifter material to be patterned before the final structure.

[Brief description of drawings]

FIG. 1 Example of the present invention

FIG. 2 Conventional example

[Explanation of symbols] 1 shifter material 2 light shielding film 3 glass substrate 4 resist

Claims (1)

[Claims] 1. A light-shielding film is formed on a glass substrate,
Patterning the light-shielding film, (b) forming a shifter material on the entire surface of the structure, (c) a resist for patterning the shifter material on the shifter material, and the resist itself is also a shifter And (d) a step of inspecting after forming the resist, and a step of forming the above-described steps.