JPH06207262A - Far infrared ray radiation member and manufacture thereof - Google Patents

Abstract

(57) [Abstract] [Purpose] As a member that emits far infrared rays by generating heat by electron induction heating or electric heating, it has excellent far infrared radiation characteristics, and also has heat crack resistance, corrosion resistance, formability,
Provided is a far-infrared radiation member that can satisfy cost and the like. [Claim 1] A hot-dip plated layer made of an Al-Si alloy containing 1 to 15% of Si is formed on the surface of a base material made of an iron-based material that can be heated by electromagnetic induction or electric current. Far-infrared radiation member with an anodized film formed on the surface of. Claim 2: As an alloy of the hot dip plated layer, in addition to Si 1 to 15%, Fe, Mg, C
u, Mn, Ni, Cr, V, Ti, Zr, P, Na, S
An Al-Si alloy containing at least one of b and Sr is used. Claim 3: As a manufacturing method, after the hot dipping of an Al-Si alloy on an iron-based material substrate, 200 to 55 is applied.
A precipitation treatment is performed at 0 ° C. for 0.5 to 24 hours, and then an anodic oxidation treatment is performed.

Description

Detailed Description of the Invention

[0001]

This invention relates to heating, cooking, drying,
The present invention relates to a far-infrared radiation member used for far-infrared radiation when radiant heating such as heating of materials and other far-infrared radiation is used, and particularly far-infrared radiation is generated by heating by electromagnetic induction heating or electric heating. It relates to members.

[0002]

2. Description of the Related Art Generally, in emitting far infrared rays, it is necessary to heat a material capable of emitting far infrared rays to 100 ° C. to several hundreds of ° C. On the other hand, as a typical electrical heating means, so-called electromagnetic induction heating in which an alternating current magnetic field is applied to a material to generate an induced current and Joule heat is generated by the induced current, or a current flowing directly to the material There is so-called electric heating that causes Joule heat generation. Therefore, it is conceivable to heat the material by such electromagnetic induction heating or electric current heating and radiate far infrared rays from the material itself, but conventional general electromagnetic induction heating or electric current heatable material is as it is. Far-infrared radiation is impossible, or even if far-infrared radiation is possible, the far-infrared radiation performance is low and it was difficult to put it to practical use.

That is, in both cases of electromagnetic induction heating and electric heating, it is necessary that the material is a conductor and has a certain degree of electric resistance. Especially, in the case of electromagnetic induction heating, a ferromagnetic material is used. It is also desirable that the material cost be low for mass-scale application. Therefore, in general, mainly iron-based materials such as steel plate, iron plate, and stainless steel (excluding austenitic stainless steel) are mainly used as the heat-generating materials in these electromagnetic induction heating and electric heating. The material cannot emit far infrared rays as it is.

Therefore, as a member that emits far infrared rays by generating heat by electromagnetic induction heating or electric heating, it is considered that the surface of the above iron material is sprayed with ceramics capable of emitting far infrared rays. However, in this case, the cost is increased, and the corrosion resistance is poor,
Further, it is difficult to obtain a member having a large size, and further, there is a problem that the molding process after ceramic spraying becomes difficult and the shape thereof is limited.

On the other hand, from the viewpoint of far-infrared radiation performance, alumina is known to be excellent among various ceramic materials. Therefore, recently, the surface of high-purity aluminum has been anodized to form alumina. A far-infrared radiating member having an alumite layer (anodized film) made of is attracting attention as a radiating member excellent in thermal conductivity and far-infrared radiating performance. However, the aluminum material is not suitable for electromagnetic induction heating or electric heating because it has no ferromagnetism and has a small electric resistance.

[0006]

As described above, conventionally, as a member that emits far infrared rays by generating heat by electromagnetic induction heating or electric heating, cost, corrosion resistance,
In reality, none of them are sufficiently satisfactory in all respects, such as moldability, obtaining a large size, and having excellent far-infrared radiation characteristics.

The present invention has been made in view of the above circumstances. As a member that radiates far infrared rays by electromagnetic induction heating or electric heating, not only the far infrared radiation characteristics are excellent, but also corrosion resistance and moldability are excellent. It is an object of the present invention to provide a far-infrared radiation member that can be easily obtained at a low cost and has a large size.

[0008]

Means for Solving the Problems The inventors of the present invention have conducted earnest experiments and studies to solve the above problems, and as a result, basically, an iron-based material capable of electromagnetic induction heating or electric current heating. On the other hand, by forming a hot-dip coating layer on the surface of the base material, on the other hand, an aluminum alloy capable of emitting far infrared rays by forming an anodized film, particularly an Al-Si-based aluminum alloy having excellent far infrared emission characteristics. The inventors have found that the aforementioned problems can be solved at the same time, and have completed the present invention.

That is, the far infrared ray radiating member capable of electromagnetic induction heating or electric current heating according to the invention of claim 1 has Si of 1 to 15 wt% on one or both sides of a base material made of an iron-based material capable of electromagnetic induction heating or electric current heating. Containing Al-
It is characterized in that a hot-dip plated layer made of a Si-based alloy is formed, and an anodized film is further formed on the surface of the hot-dip plated layer.

Further, the far infrared radiation member capable of electromagnetic induction heating or electric heating according to the invention of claim 2 is the far infrared radiation member according to claim 1, wherein the Al of the hot-dip plated layer is
-Si-based alloy contains 1 to 15 wt% of Si, and F
0.05-2.0 wt%, Mg 0.05-2.0 wt%, C
u 0.05-6.0 wt%, Mn 0.05-2.0 wt%,
Ni0.05-3.0wt%, Cr0.05-0.5wt
%, V0.05-0.5 wt%, Ti0.005-0.2
wt%, Zr 0.05 to 0.5 wt%, P 0.005 to 0.
1 wt%, Na 0.005-0.1 wt%, Sb 0.005
~ 0.3wt%, 1 of Sr 0.005-0.1wt%
One kind or two or more kinds are contained, and the balance is made of Al and unavoidable impurities.

According to the third aspect of the present invention, there is provided a method for producing a far infrared ray radiating member capable of electromagnetic induction heating or electric current heating, wherein Si1 to An Al-Si alloy containing 15 wt% is hot-dipped, the hot-dip layer is heated at 200 to 550 ° C. for 0.5 to 24 hours, and then the hot-dip layer surface is anodized. To do.

[0012]

In the far infrared ray radiating member of the present invention, the iron-based material of the base material generates heat by electromagnetic induction heating or electric heating, and the heat is generated by the non-anodized portion of the hot-dip plated layer made of Al-Si alloy. Transmitted to the anodized film,
Far infrared rays are emitted from the anodized film.

Here, the iron-based material of the base material may be any material capable of electromagnetic induction heating or electric heating, and carbon steel plate, iron plate, stainless steel plate, alloy steel plate and the like can be used. However, among the stainless steels, austenitic stainless steels are not suitable for electromagnetic induction heating because they do not have ferromagnetism.

Pure Al cannot be used in the hot-dip plated layer, but when an anodic oxide film is formed on pure Al, not only the far-infrared radiation characteristics are generally low, but especially 3 to
In addition to the drawback that the far-infrared radiation characteristics in the wavelength range of 7 μm sharply deteriorate, when used at high temperatures of 200 ° C or higher, thermal shock causes cracking, which impairs durability and impairs far-infrared radiation performance. Be stable. Therefore, in the present invention, as the hot-dip plated layer, an Al-Si alloy that solves these problems is used. The Al-Si alloy of this hot dip plated layer will be described below.

In the Al--Si alloy, metal Si particles are structured as primary crystal Si, eutectic Si, or precipitated Si depending on the Si content and, if necessary, the heat treatment conditions. Dispersed in the matrix, and part of it is present as solid solution Si in the matrix. Primary Si, Eutectic Si, Precipitated Si
Is, even after anodizing the surface of the Al-Si-based alloy, remains in the anodized film as metal Si particles, therefore, if the dispersion state of the metal Si particles is appropriate, the metal Si particles, It contributes to the far-infrared radiation characteristics and also improves the heat crack resistance. That is,
When the surface of the aluminum alloy plating layer in which the metallic Si particles are dispersed is subjected to anodizing treatment, the metallic Si particles remain in the anodized film. Incident light is scattered and absorbed by such dispersed particles in the anodic oxide film, and the radiation characteristics of far infrared rays are improved. Furthermore, the pores have a branched structure in the process of growing the anodized film (porous layer) during the anodizing treatment, and such branched pore structure promotes scattering absorption in the anodized film for incident light, Far-infrared radiation characteristics are further improved.

Further, the metallic Si particles dispersedly present in the anodized film also function as a stress relaxation point, and the branched structure of the pores as described above has a high strain absorbing ability,
Therefore, cracks are unlikely to occur, and even if cracks occur, their propagation is prevented and heat crack resistance is improved.

The reasons for limiting the component composition of the Al-Si alloy of the hot-dip plated layer will be described below.

Si: Si is crystallized as primary crystal Si and eutectic Si depending on the amount of addition during solidification during hot dipping, and part thereof exists as solid solution Si. Further, when heat treatment is performed as necessary, solid solution Si in the Al matrix also precipitates as metallic Si. As described above, these primary crystal Si, eutectic Si, and precipitated Si are incorporated into the anodized film as metallic Si particles during the anodization process, and contribute to the improvement of far infrared radiation characteristics through scattering and absorption of incident light. It also contributes to the prevention of cracks. Furthermore, the metal Si particles contribute to the pores in the coating having a branched structure as described above, which also contributes to the improvement of far infrared radiation characteristics and the prevention of cracks. When the amount of Si in the aluminum alloy is less than 1 wt%, the number of metallic Si particles is small and the far infrared radiation becomes insufficient. On the other hand, if the Si amount exceeds 15 wt%, the volume ratio of the metal Si particles in the anodized film is too large, and the strength and corrosion resistance of the anodized film are reduced. Therefore, the Si amount is set within the range of 1 to 15 wt%.

The Al-Si based alloy used for the hot-dip plated layer may basically be Al and inevitable impurities in addition to the above Si, but if necessary, Fe 0.
05-2.0 wt%, Mg 0.05-2.0 wt%, Cu
0.05-6.0 wt%, Mn 0.05-2.0 wt
%, Ni 0.05 to 3.0 wt%, Cr 0.05 to
0.5 wt%, Zr 0.05 to 0.5 wt%, V 0.
05-0.5 wt%, Ti 0.005-0.2 wt%, P
0.005-0.1 wt%, Na 0.005-0.
1 wt%, Sb 0.005-0.3 wt%, Sr 0.0
You may add 1 type (s) or 2 or more types among 05-0.1 wt%. The reasons for adding these elements are as follows.

Fe: Fe is effective for improving strength and refining crystal grains. If the Fe content is less than 0.05 wt%, the effect cannot be obtained, and if it exceeds 2.0 wt%, the strength and corrosion resistance of the anodic oxide film are deteriorated. On the other hand, if the amount of Fe exceeds 2.0 wt%, Si combines with Fe to increase the amount of Al-Fe-Si based intermetallic compounds, which deteriorates the far infrared radiation characteristics. Therefore, the amount of Fe when adding Fe is 0.05
˜2.0 wt%.

Mg: Mg also contributes to the improvement of strength. If the amount of Mg is less than 0.05 wt%, the effect cannot be obtained, while 2.
If it exceeds 0 wt%, Mg and Si are combined with each other to increase the amount of Mg ₂ Si produced and the far infrared radiation characteristics deteriorate. Also M
If the g amount exceeds 2.0 wt%, the adhesion of the hot-dip plated layer will also decrease. Therefore, when Mg is added, the amount of Mg is 0.
It is within the range of 05 to 2.0 wt%.

Cu: The addition of Cu also contributes to the strength improvement.
If the Cu content is less than 0.05 wt%, the effect cannot be obtained, while if it exceeds 6.0 wt%, the adhesion of the hot-dip layer is deteriorated. Therefore, the amount of Cu when adding Cu is 0.05
Within the range of up to 6.0 wt%.

Mn: Mn contributes to the improvement of strength, refinement of crystal grains and improvement of heat resistance. If the amount of Mn is less than 0.05 wt%, these effects cannot be obtained. On the other hand, if the amount of Mn exceeds 2.0 wt%, Mn is combined with Si to form Al-Mn.
The amount of -Si-based intermetallic compound produced increases, and the far-infrared radiation characteristics deteriorate. On the other hand, if the Mn content exceeds 2.0 wt%, the adhesion of the hot-dip layer will deteriorate. Therefore, when Mn is added, the amount of Mn is set in the range of 0.05 to 2.0 wt%.

Ni: Ni also contributes to the improvement of strength and heat resistance. If the amount of Ni is less than 0.05 wt%, these effects cannot be obtained, while if it exceeds 2.0 wt%, the adhesion of the hot-dip layer is reduced. Therefore, when Ni is added, the amount of Ni is set within the range of 0.05 to 2.0 wt%.

Cr, Zr, V: These elements contribute to the improvement of strength and the refinement of crystal grains. In either case, the effect cannot be obtained if it is less than 0.05 wt%, while if it exceeds 0.5 wt%, a coarse intermetallic compound is formed. The adhesion of the hot-dip layer is reduced. Therefore C
When one or more of r, Zr, and V are added, the addition amount of each is within the range of 0.05 to 0.5 wt% as a single amount.

Ti: Ti contributes to the refinement of the structure through refinement of the ingot crystal grains. If the Ti content is less than 0.005 wt%, the effect cannot be obtained, while if it exceeds 0.2 wt%, a coarse intermetallic compound is formed, which is not preferable. Therefore, the amount of Ti when adding Ti is 0.005-0.2 wt.
Within the range of%. In addition, in order to refine the ingot crystal grains,
It is effective to make B coexist with Ti. In this case, if the amount of B is less than 1 ppm, the effect cannot be obtained.
Since the effect is saturated if it exceeds 00 ppm, the amount of B when B is added together with Ti is preferably in the range of 1 to 100 ppm.

P: P contributes to the refinement of primary crystal Si. Therefore, the addition of P is about 10 wt% to crystallize the primary crystal Si.
This is effective in the case of an alloy containing Si in an amount of not less than%. P
If the amount is less than 0.005 wt%, the effect of refining the primary crystal Si cannot be obtained, while if the amount of P exceeds 0.1 wt%, the effect is saturated. Therefore, when adding P, the amount of P is 0.0
It was set within the range of 05 to 0.1 wt%.

Na, Sb, Sr: These elements are eutectic S
It contributes to miniaturization of i. If the content is less than 0.005 wt%, the effect cannot be obtained, while if Na and Sr exceed 0.1 wt%, the effect is saturated, and if Sb exceeds 0.3 wt%, the effect is saturated. Therefore, when Na is added, the amount of Na is 0.005 to 0.1 wt%, when Sb is added, the amount of Sb is 0.005 to 0.3 wt%, and when Sr is added, the amount of Sr is 0.005 to 0.1 wt%. It was set within the range of 0.1 wt%. When Nb, Sb and Sr coexist with P,
Since the effect of refining the primary crystal Si by P is lost,
It is desirable not to coexist with P.

In addition to the above-mentioned elements, Zn is inevitably mixed in ordinary aluminum alloys when scrap is used as a melting raw material. Zn is rarely added particularly positively, but far-infrared radiation characteristics and the like are not adversely affected even if it is mixed as an unavoidable impurity up to about 1.0 wt%. However, in some cases, Zn may be added in an amount of more than 1.0 wt% and 7.0 wt% to improve the strength. If the amount of Zn added exceeds 7.0% by weight, the adhesion of the hot-dip layer deteriorates.

Other elements as long as they are 1.0 wt% or less do not particularly affect far infrared radiation characteristics.

In order for the hot dip plated layer made of the Al--Si alloy having the above-mentioned composition to exhibit excellent far infrared radiation characteristics after anodizing treatment and to exhibit good heat crack resistance, the structure state, Particularly, the dispersed state of the metal Si particles is important. That is, as already mentioned, Al--Si
In a system aluminum alloy, when solidified, it is crystallized as primary crystal Si and eutectic Si depending on the amount added, and a part thereof exists in the matrix as solid solution Si. When heat-treated after solidification, metallic Si precipitates from the Al matrix. These crystallized Si (primary crystal Si, eutectic Si) and precipitated Si remain as metallic Si even after anodizing treatment.
The metal Si particles that remain as particles in the anodic oxide coating have a great influence on the infrared radiation characteristics and heat crack resistance of the anodic oxide coating, but are effective for obtaining good far infrared radiation characteristics. 0.05% of metallic Si particles
It has a size (particle diameter) of not less than μm. That is, when the diameter of the metal Si particles is less than 0.05 μm, the far-infrared rays are not sufficiently scattered and absorbed, and good radiation characteristics cannot be obtained. It is important that such metal Si particles having a size of 0.05 μm or more are uniformly and densely dispersed.

When an Al--Si alloy having the above-described composition is hot-plated, the molten Al--Si alloy is solidified on a base material made of an iron-based material. Crystalline Si and eutectic Si are crystallized together with primary Al-α dendrite. The trunk and branch portions of the dendrites here are solid solutions (α phase) in the solidified state, and no metallic Si is generated in this portion. When the solidification rate of the hot-dip layer on the substrate is fast, the trunk and branch parts of the dendrite become narrow, and when the Si content is high, the amount of primary crystallites and eutectic crystallites increases. Therefore, in the case where the solidification rate is high and the Si content is large (about 3 wt% or more), a structure in which metallic Si particles of 0.05 μm or more are relatively uniformly and densely dispersed as a whole even in the solidified state. However, if the metal Si particles are insufficient in the solidified state, it is desirable to perform another precipitation treatment after the solidification to precipitate the metal Si from the solid solution portion.

The conditions for the precipitation treatment are Al- of the hot-dip coating layer.
Although it depends on the composition of the Si-based alloy, it is usually 20
It is desirable to perform heating at 0 to 550 ° C. for 0.5 to 24 hours. If the temperature is lower than 200 ° C., the size of the precipitated Si particles is small, and it tends to be less than 0.05 μm. Meanwhile 550
If the temperature exceeds ℃, local melting may occur or the amount of precipitation may decrease. If the heating time is less than 0.5 hours, the effect of precipitating Si is not obtained, and heating for 24 hours or more is economically wasted.

Here, the thickness of the hot-dip plated layer is not particularly limited, but it is usually desirable to set it within the range of 10 to 500 μm. If the thickness of the hot-dip layer is less than 10 μm, pinholes may be generated during the anodizing process, which may make it difficult to form a sound anodized film.
With a hot-dip layer having a thickness of more than μm, it becomes difficult to form a uniform plated layer.

Further, in the far infrared ray radiating member of the present invention, an anodic oxide film is formed on the surface of the hot dip plated layer made of Al-Si alloy. The anodic oxide film formed on the surface of the hot-dip coating layer made of an Al-Si alloy in this way exhibits excellent far infrared radiation characteristics and good heat crack resistance. That is, during the anodizing treatment, the anodized film grows in a state where the metal Si particles on the surface of the hot-dip plated layer remain in the film as they are.
The growth of pores in the film is hindered by the metallic Si particles, and a porous film having branched fine pores is formed. Further, the metallic Si particles remaining in the anodic oxide film as they are and dispersed and the above-mentioned branched fine pores scatter and absorb the incident light, and as a result, the far infrared radiation characteristics are improved. Further, the branched fine pore structure and the metal Si particles dispersed in the coating function as a relaxation point for thermal stress, so that the coating is less likely to crack and cracks occur up to a high temperature of about 500 ° C. It can be used without.

The conditions of the anodizing treatment are not particularly limited, and an inorganic acid such as sulfuric acid or oxalic acid, or an organic acid, or an electrolytic bath of a mixed acid thereof is used.
The anodic oxidation treatment may be performed using an arbitrary waveform such as direct current, alternating current, alternating-current / direct-current combination, alternating-current / direct current superimposed waveform, or the like. However,
From the viewpoint of economy and work efficiency, it is preferable to use a direct current in a sulfuric acid bath. Also, degreasing before anodizing,
It is common to perform pretreatment such as caustic etching,
When caustic etching is performed, it is common to subsequently perform desmutting treatment with an acid such as nitric acid. In addition, it is needless to say that mechanical pretreatment such as cutting, acid cleaning, chemical polishing, hairline processing, and sailboat blasting may be carried out if necessary.

Here, it is desirable that the anodized film is formed with a thickness of 3 μm or more. If the coating thickness is less than 3 μm, sufficient far infrared radiation characteristics may not be obtained. The visual color tone of the anodized film is sufficiently dark black when the film thickness is about 10 μm or more, and the far-infrared radiation characteristics are extremely good. On the other hand, when the thickness is less than 10 μm, the color tone is gray and the far infrared radiation characteristics are slightly deteriorated, but the gray color tone may be preferred depending on the application. In such a case, if the thickness of the anodic oxide film is about 3 to 10 μm. It is good, and even in that case, far-infrared radiation characteristics that do not hinder practical use can be obtained.

[0038]

EXAMPLE A carbon steel plate having a plate thickness of 0.7 μm was used as a base material, and the surface of the base material was hot-dipped with an Al—Si alloy shown in alloy numbers 1 and 2 of Table 1 with a plating thickness of 200 μm.

When the surface structure of the alloy No. 1 hot-dip layer during solidification was examined, eutectic Si was dispersed relatively uniformly. That is, when the size of crystallized Si is 3 to 20 μm,
The distribution density was 5000 to 50000 pieces / m ² . Therefore, it was decided not to perform a precipitation treatment on the hot-dip layer of Alloy No. 1.

When the surface of the hot-dip plated layer of alloy No. 2 after solidification was examined, the distribution density of crystallized Si was 500 /
It was found to be as low as m ² . Therefore, in addition to the as-solidified material, a material subjected to a deposition treatment at 300 ° C. for 5 hours after hot dipping was also prepared. When the surface after the precipitation treatment was examined, it was confirmed that metal Si of 0.05 to ² μm was dispersed at a distribution density of 50,000 pieces / m ² or more.

As described above, the hot-dip galvanized alloy No. 1 and alloy No. 2 hot-dip layers and the alloy No. 2 hot-dip plated layer after the precipitation treatment were etched with a 10% NaOH aqueous solution at 60 ° C. for 1 minute. After washing with water, desmutting treatment was performed with 30% nitric acid, and then anodizing treatment was performed under the following conditions. Treatment bath: 15% sulfuric acid Electrolysis temperature: 20 ° C. Current density: 1.5 A / dm ^{2 The} target anodic oxide film thickness was 15 μm.

For each material, the spectral emissivity of the surface after anodizing (the surface of the anodized film) was examined, and the results are shown in Table 2 together with the results of the metallographic examination. Regarding the spectral emissivity, it has been a problem that the conventional general pure Al-based aluminum anodic oxide film has a low spectral emissivity in the wavelength range of 3 to 7 μm. Spectral emissivity at a typical 6 μm wavelength was examined at 300 ° C. Generally, it can be said that when the spectral emissivity is 0.6 or more, it has good far infrared radiation characteristics.

[0043]

[Table 1]

[0044]

[Table 2]

As is clear from Table 2, excellent far-infrared radiation characteristics could be obtained when the size and dispersion state of metallic Si were appropriate. Further, in these cases, no heat crack was observed even when heated to 500 ° C. after the anodizing treatment.

[0046]

According to the far-infrared radiation member of the present invention, a hot-dip coating layer made of an Al-Si alloy is formed on the surface of a base material made of an iron-based material capable of electromagnetic induction heating or electric heating, and the hot-dip plating is performed. An anodized film is formed on the surface of the layer, and the Al-Si alloy of the hot-dip plated layer is excellent in far-infrared radiation characteristics and heat crack resistance in the state where the anodized film is formed. By directly heating the part by electromagnetic induction heating or electric heating, far infrared rays can be radiated with high radiation efficiency from the anodized film on the surface of the hot-dip plated layer, and heat cracks occur in the anodized film even at high temperatures. Since there is little fear, it has high durability and stable far infrared radiation characteristics. In addition, since the base material made of an iron-based material is hot-plated with an Al-Si-based aluminum alloy, it has high corrosion resistance and good formability, and is suitable for radiating members with complicated shapes and large-sized radiating members. Can be easily applied, and has various advantages such that the cost is not so high.

Front page continuation (72) Inventor Koichi Saruwatari Fujikura, 1-5-1 Kiba, Koto-ku, Tokyo

Claims (3)

[Claims] 1. Si 1 to 1 on one or both sides of a base material made of an iron-based material capable of electromagnetic induction heating or electric current heating.
Far-infrared radiation capable of electromagnetic induction heating or electric current heating, characterized in that a hot-dip layer made of an Al-Si alloy containing 5 wt% is formed and an anodic oxide film is further formed on the surface of the hot-dip layer. Element. 2. The far-infrared radiation member according to claim 1, wherein the Al—Si alloy of the hot-dip plated layer is Si1.
˜15 wt% and F0.05-2.0 wt%, M
g 0.05 to 2.0 wt%, Cu 0.05 to 6.0 wt%,
Mn 0.05-2.0 wt%, Ni 0.05-3.0 wt
%, Cr 0.05 to 0.5 wt%, V 0.05 to 0.5 wt%
%, Ti 0.005 to 0.2 wt%, Zr 0.05 to 0.
5 wt%, P 0.005-0.1 wt%, Na 0.005-
0.1 wt%, Sb 0.005-0.3 wt%, Sr0.0
A far-infrared radiation member capable of electromagnetic induction heating or electric heating, containing one or more of 0.05 to 0.1 wt% and the balance being Al and unavoidable impurities. 3. Si 1 to 1 on one or both sides of a base material made of an iron-based material capable of electromagnetic induction heating or electric current heating.
After hot-plating an Al-Si alloy containing 5 wt%, the hot-dip coating layer is applied at 200-550 ° C for 0.5-2.
A method for producing a far-infrared emitting member capable of electromagnetic induction heating or electric current heating, which comprises heating for 4 hours and then subjecting the surface of the hot-dip plated layer to anodization.