JPH0621017A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Abstract] [Object] A method for manufacturing a semiconductor device including a method for forming an electrode and a wiring layer of a thin film transistor used in a semiconductor integrated circuit and a liquid crystal display device, which is used for selectively forming a conductor pattern film made of copper or aluminum. When the photosensitive mask is peeled off, the conductor pattern film reacts with the stripping solution to prevent the film thickness from decreasing and thinning, which prevents the increase in resistance of the conductor pattern film. The purpose is to [Structure] A conductor film 12 and a protective film 13 are sequentially formed on a substrate 11, and then a photosensitive mask 14 is formed on the protective film 13 by patterning the photosensitive film, and then the photosensitive mask 14 is formed.
Based on the above, the protective film 13 and the conductor film 12 are sequentially removed by etching, the conductor pattern film 12A is formed, and then the photosensitive mask 14 is peeled off.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more specifically, to a thin film transistor (hereinafter referred to as TF) used for a display cell of a semiconductor integrated circuit and a liquid crystal display device.
Called T. The manufacturing method of a semiconductor device including the method of forming an electrode and a wiring layer of 1).

[0002]

2. Description of the Related Art Conventionally, high-melting point metals such as Mo (molybdenum) and Ta (tantalum) and alloys obtained by adding high-melting point metals to Al (aluminum) have been used as electrode wiring materials. As integration and high precision progress, Cu (copper), which has a smaller resistance value than Al, is being studied. These are generally formed by an magnetron sputtering method or the like on an insulating film such as an oxide film or a nitride film or on an insulating transparent substrate.

However, since Al and Cu react with the alkali of the stripping solution by stripping the resist after etching,
The film becomes thinner and the resistance increases accordingly. In particular, the wiring width becomes smaller as the degree of integration or the degree of precision becomes higher, so that the higher resistance cannot be ignored.

Therefore, there is a demand for a method of manufacturing an electrode wiring having a low resistance which suppresses such an increase in resistance. Hereinafter, a method of manufacturing a semiconductor device according to a conventional example will be described with reference to the drawings. FIG. 9 is a process explanatory diagram of a method for manufacturing a semiconductor device according to a conventional example.

First, a conductor film 2 made of copper, which is a low resistance metal, is formed on a glass substrate 1 by a sputtering method. Next, a photoresist is applied to the upper surface, and the resist pattern 4 is formed by selective exposure and development (FIG. 9).
(A)). Then, the resist pattern 4 is used as a mask for etching to form a conductor pattern 2A (FIG. 9).
(B)). Then, the resist pattern 4 is removed by using a resist stripping solution composed of an organic solvent or the like (FIG. 9).
(C)).

[0006]

According to the above-mentioned conventional method, as shown in FIG. 9C, in the step of stripping the resist pattern 4, the conductor pattern film 2A below the resist pattern 4 comes into contact with the stripping solution. To do. Therefore, the conductor pattern film 2A becomes thinner than its original thickness d due to the reaction with the alkali or the like of the stripping solution.

As a result, when the conductor pattern film 2A is used as a wiring layer, the cross-sectional area of the conductor pattern film 2A becomes small, which causes a problem that its resistance value becomes higher than a predetermined value. In particular, in recent years when high integration and high precision have advanced, such high resistance of the wiring layer is
In particular, it becomes remarkable in the miniaturized wiring layer and cannot be ignored.

The present invention has been made in view of the problems of the conventional example. When the photosensitive mask used for selectively forming the conductor pattern film made of copper or aluminum is peeled off, the conductor pattern film is formed. An object of the present invention is to provide a method for manufacturing a semiconductor device, which can prevent thinning due to film loss caused by reacting with a stripping solution, and prevent high resistance of a conductor pattern film caused by it. To do.

[0009]

A first method of manufacturing a semiconductor device according to the present invention is, firstly, as shown in FIGS.
Forming a conductor film 12 on the substrate 11, forming a protective film 13 on the conductor film 12, and forming a photosensitive film on the protective film 13, A step of patterning the film to form a photosensitive mask 14, and based on the photosensitive mask 14, the protective film 13 and the conductor film 12 are sequentially etched and removed to form a conductor pattern film 12A. This is accomplished by a method for manufacturing a semiconductor device, which comprises a step and a step of peeling off the photosensitive mask 14. Secondly, as shown in FIGS. 12, forming a protective film 13 on the conductor film 12, forming a photosensitive film on the protective film 13, then patterning the photosensitive film, a photosensitive mask 14 and etch the protective film 13 based on the photosensitive mask 14. A step of Gu removal,
And a step of removing the photosensitive mask 14 and etching and removing the conductor film 12 using the patterned protective film 13A as a mask to form a conductor pattern film 12A. Thirdly, according to the first or second invention, the conductor film 12 is made of a metal film containing any one of aluminum and copper. Fourthly achieved by a method for manufacturing a semiconductor device, and fourthly, the protective film 13 is a metal film containing any one of molybdenum, titanium and tungsten. A fifth aspect of the present invention is achieved by a method of manufacturing a semiconductor device.
The protective film 13 is a semiconductor film containing one of silicon and germanium.
A sixth aspect of the present invention is achieved by the method of manufacturing a semiconductor device according to the invention, and sixthly, the conductive film 12 is a metal film containing one of aluminum and copper, and the reactive ion etching is performed using a gas containing chlorine. By the photosensitive mask
The protective film 13 and the conductor film 12 are sequentially etched and removed based on 14 to form a conductor pattern film 12A, which is achieved by the method for manufacturing a semiconductor device according to the fourth or fifth invention. Seventh, by the method for manufacturing a semiconductor device according to the first or second invention, the protective film 13 is an insulator film containing either a silicon nitride film or a silicon oxide film. Achieved, eighthly, a metal film containing one of aluminum and copper is used as the conductor film 12, and the protective film 13 is dry-etched using a gas containing fluorine to form the conductor film 12. Achieved by the method for manufacturing a semiconductor device according to the seventh invention, characterized in that dry etching is performed using a gas containing chlorine. Ninth, a copper film is used as the conductor film 12, and the protective film is used. Alumini as 13 This is achieved by the method for manufacturing a semiconductor device according to the first or second invention, which is characterized by using an um-film, and tenthly, by using a solution containing a solution containing phosphoric acid and nitric acid, The conductive film 12 and the conductive film 12 are sequentially etched and removed to form a conductive pattern film 12A, which is achieved by the method for manufacturing a semiconductor device according to the ninth invention. Eleventh, a gas containing chlorine. The protective film 13 and the conductor film 12 are sequentially dry-etched and removed by using the above method to form a conductor pattern film 12A, which is achieved by the method for manufacturing a semiconductor device according to the ninth invention. Twelfth, after the protective film 13 is selectively etched and removed using a solution containing phosphoric acid, the conductor film 12 is etched with a solution containing nitric acid using the protective film 13 as a mask. Removed, conductor pattern film 12A This is achieved by the method for manufacturing a semiconductor device according to the ninth invention, which is characterized in that it is formed, and thirteenth, as shown in FIGS. 7 and 8, a light-shielding gate electrode 22 is formed on a transparent substrate 21. A gate insulating film 23 is formed so as to cover the gate electrode 22, an operating semiconductor layer 24 is provided on the gate insulating film 23, and the gate electrode 22 is provided on the operating semiconductor layer 24. A channel protection film 25 is formed in an upper region of the channel protection film 25, and source / drain electrodes 28S and 28D are formed so as to be connected to the operating semiconductor layers 24 on both sides of the channel protection film 25.
A method of manufacturing a semiconductor device, comprising a pixel electrode 29 and a drain bus line 30 connected to the source / drain electrodes 28S and 28D, wherein the substrate 11 is the transparent substrate 21.
And the conductor pattern film 12A corresponds to the gate electrode 22.
And a semiconductor device manufacturing method according to any one of the first to twelfth inventions.
14, a light-shielding gate electrode 22 is formed on the transparent substrate 21, and a gate insulating film 23 is formed so as to cover the gate electrode 22.
Is provided, an operating semiconductor layer 24 is provided on the gate insulating film 23, and a channel protective film 25 is formed on the operating semiconductor layer 24 in a region above the gate electrode 22.
Source / drain electrodes 28S and 28D are formed to be connected to the operating semiconductor layers 24 on both sides of the channel protection film 25, and pixel electrodes 29 and drain bus lines 30 are formed to be connected to the source / drain electrodes 28S and 28D. In the method for manufacturing a semiconductor device, the substrate 11 is the transparent substrate 21 after the source / drain electrodes 28S and 28D are formed, and the conductor pattern film 12A is the drain bus line 30. This is achieved by the method for manufacturing a semiconductor device according to any one of the first to twelfth aspects of the invention.

[0010]

[Operation] According to the first method for manufacturing a semiconductor device of the present invention, as shown in FIG. 1C, a photosensitive mask 14 for patterning the conductor film 12 and the conductor film 12 are formed. 2D, the protective film 13 and the conductor film 12 are selectively etched based on the photosensitive mask 14 to form a protective film 13A and a conductor pattern film 12A, with the protective film 13 interposed therebetween. After that, the photosensitive mask 14 is peeled off. Therefore, as shown in FIG. 2E, when the photosensitive mask 14 is peeled off, the conductor pattern film 12A is directly removed from the photosensitive mask 14 excluding the side wall of the formed conductor pattern film 12A. Do not touch. As a result, it is possible to prevent the conductor pattern film 12A from being thinned, so that it is possible to suppress the increase in resistance of the conductor film 12 as much as possible.

In the above case, for example, a metal film containing either aluminum or copper is used as the conductor film, and a metal film of molybdenum, titanium, tungsten or the like or a semiconductor film of silicon, germanium or the like is used as the protective film 13. After the protective film 13 and the conductor film 12 are sequentially etched and removed based on the photosensitive mask 14 by reactive ion etching using a chlorine-based gas using the film, the photosensitive mask
By removing 14, the above-mentioned effect is achieved.

Secondly, as shown in FIG. 3C, the protective film 13 is interposed between the photosensitive mask 14 for patterning the conductor film 12 and the conductor film 12. 1 is the same as that of the first invention, but thereafter, unlike the first invention, FIG.
As shown in FIGS. 4D and 4E, the protective film 13 is selectively etched based on the photosensitive mask 14 to leave the protective film 13A, and then the photosensitive mask 14 is removed by a stripping solution. As shown in FIG. 4F, the conductor film 12 is selectively etched by using the protective film 13A as a mask, and the conductor pattern film 12 is formed.
Forming A. Therefore, unlike the first invention, neither the upper surface nor the side wall of the formed conductor pattern film 12A is in direct contact with the stripping liquid of the photosensitive mask 14. As a result, the conductor pattern film 12A can be prevented from being thinned and the width thereof can be prevented from being reduced, so that it is possible to more effectively prevent the resistance of the conductor pattern film 12A from increasing.

In the above case, for example, a metal film containing one of aluminum and copper is used as the conductor film, and an insulator film containing either a silicon nitride film or a silicon oxide film is used as the protective film 13. A protective film by dry etching using a fluorine-based gas, and a conductive film 12 by reactive ion etching using a chlorine-based gas.
Are sequentially etched and removed based on the photosensitive mask 14, and then the photosensitive mask 14 is removed to achieve the above-mentioned effect.

Third, as shown in FIGS. 5 and 6, a copper film is used as the conductor film 12 and an aluminum film is used as the protective film 13. In this case, as shown in FIG. 6D, a conductive film 12 and a protective film are formed on the basis of the photosensitive mask 14 using a gas containing chlorine or a liquid containing phosphoric acid and nitric acid.
By dry etching and removing 13 and then removing the photosensitive mask 14, it is possible to prevent the conductor pattern film 12C from being thinned as in the first case. Therefore, the conductor pattern film 12C can be prevented. It is possible to prevent the high resistance of the.

Alternatively, the protective film is etched on the basis of the photosensitive mask using a solution containing phosphoric acid, the photosensitive mask is removed, and then a solution containing nitric acid is used to mask the protective film with the conductor film. Etching. By removing the side wall of the conductor pattern film, it is possible to prevent the side wall of the conductor pattern film from directly contacting with the stripping solution of the photosensitive mask 14. As a result, it is possible to prevent the conductor pattern film 12C from being thinned and narrowing its width, so that it is possible to more effectively prevent the resistance of the conductor pattern film 12C from increasing.

Further, in the third case, the refractory metal is
The handling is easier than when a titanium film or molybdenum film, which is difficult to handle, is used as the material of the protective film 13. Fourthly, as shown in FIGS. 7A and 7B, a gate electrode (conductor pattern film) 22 is formed on a transparent substrate (base) 21.
8A, or when forming a drain bus line (conductor pattern film) 30 on a substrate having source / drain electrodes 28S and 28D formed on a transparent substrate (substrate) 21 shown in FIG. In addition, the method for manufacturing a semiconductor device according to the first or second invention is used.

Therefore, in the method of manufacturing the TFT active matrix, the gate electrode 22 or the drain bus line 30 is prevented from being thinned and the width thereof is reduced, and the resistance value of the gate electrode 22 or the drain bus line 30 is maintained at a low value. be able to.

[0018]

EXAMPLES A method of manufacturing a semiconductor device according to an example of the present invention will be described below with reference to FIGS.

(1) First Embodiment FIGS. 1 (a) to 1 (c) and 2 (d) to 2 (f) are explanatory views of steps of a method for manufacturing a semiconductor device according to a first embodiment of the present invention. Is.

First, as shown in FIG. 1A, a transparent substrate
Conductor film made of copper with a film thickness of 1000Å on 11 (base) 12
Are formed by a sputtering method or a vapor deposition method. Next, a 1000 Å thick molybdenum film 13 (protective film) is formed on the conductor film 12 by Ar.
It is formed by sputtering under the conditions of flow rate: 45 SCCM, pressure: 3 mTorr, DC power: 2 kw (Fig. 1
(B)).

Next, a resist is applied on the molybdenum film 13, and a resist pattern 14 (photosensitive mask) corresponding to the conductor pattern film is formed by photolithography (FIG. 1C).

Further, a gas containing chlorine such as CCl ₄ is used, and the molybdenum film 13 and the conductor film 12 are masked with the resist pattern 14 as a mask under the etching rate of 500Å / min.
Are sequentially etched by RIE (Reactive Ion Etching) to form a conductor pattern film 12A as a wiring layer or the like (FIG. 2D).

Next, the resist pattern 14 is stripped off using a stripping solution composed of an organic solvent or the like (FIG. 2 (e)). At this time, since the upper surface of the conductor pattern film 12A is protected by the protective film 13A, it is possible to prevent the reaction with the stripping solution and prevent the film loss (FIG. 2 (e)).

Next, only the protective film 13 is etched by an etching rate of 300 Å by RIE using a fluorine-based gas such as CF _4.
The conductor pattern film 12A is left by selective etching / removal under the condition of 1 / min (see FIG. 2).
(F)). In this way, the wiring layer 12A having no film thickness reduction is formed, so that the resistance value of the conductor pattern film 12A can be maintained at a low value.

As described above, according to the method of manufacturing the semiconductor device of the first embodiment of the present invention, the space between the resist pattern 14 and the aluminum film 12 for patterning the aluminum film 12 as the conductor film is formed. Since the molybdenum film 13 as a protective film is interposed in the above, as shown in FIG. 2D, the molybdenum film 13 and the aluminum film 12 are selectively etched based on the resist pattern 14 to protect the protective film 13A and the conductor pattern. After forming the film 12A, as shown in FIG. 2E, when the resist pattern 14 is peeled off, the resist pattern 14 does not come into direct contact with the peeling liquid of the resist pattern 14 except for the sidewalls of the formed conductor pattern film 12A. As a result, it is possible to prevent the conductor pattern film 12A from being thinned and to suppress the resistance increase of the conductor film 12 as much as possible.

Although a molybdenum film is used as an example of the protective film 13 in this embodiment, other metal films such as tantalum and titanium, semiconductor films such as silicon and germanium, silicon nitride films and silicon oxide films may be used. The same effect can be obtained by using an insulating film such as a film.

Further, although the aluminum film is used as the conductor film 12, a copper film can also be used. Furthermore, in this embodiment, the transparent substrate 11 is used as the base, but the same effect can be obtained by using a semiconductor substrate such as a silicon substrate.

(2) Second Embodiment A method for manufacturing a semiconductor device according to a second embodiment of the present invention will be described below with reference to FIGS. 3 (a) to 3 (d) and 4 (e) to (g). While explaining. The difference from the first embodiment is that the photosensitive mask is removed after the protective film is formed by utilizing the etching selection ratio between the conductive film and the protective film, and then the conductive film is formed using the protective film as a mask. It is being removed.

First, as shown in FIG. 3A, a conductor film 12 made of copper and having a film thickness of about 1000 Å is formed on the substrate 11 by a sputtering method or the like. Next, a silicon oxide film (protective film) 13B having a film thickness of 1000Å is formed on the conductor film 12 by the CVD method (FIG. 3B).

Next, a photoresist is applied on the silicon oxide film 13B, and a resist pattern 14 (photosensitive film) corresponding to the conductor pattern film is formed by photolithography (FIG. 3C).

Next, only the silicon oxide film 13B is selectively etched by RIE using a gas containing fluorine such as CF _{4 under} the condition of an etching rate of 100 Å / min using the resist pattern 14 as a mask. By removing, the protective film 13C corresponding to the conductor pattern film remains (FIG. 3).
(D)).

Next, the resist pattern 14 is peeled off using a peeling solution composed of an organic solvent. At this time, since the conductor film 12 is protected by the protective film 13C, it is possible to prevent the reaction with the stripping solution (FIG. 4 (e)).

Next, the remaining molybdenum film 13 is used as a mask to pattern the conductor film 12 by wet etching using phosphoric acid to form a conductor pattern film 12A to be a wiring layer or the like (FIG. 4 (f)). .

Further, only the molybdenum film 13 is selectively etched and removed by RIE using a fluorine-based gas such as CF _{4 under} the condition of an etching rate of 300 Å / min (FIG. 4 (g)). In this way, the wiring layer 12A having no film thickness reduction is formed, so that the resistance value of the conductor pattern film 12A can be maintained at a low value.

As described above, according to the semiconductor device manufacturing method of the second embodiment of the present invention, the protective film is provided between the resist pattern 14 for patterning the conductor film 12 and the aluminum film 12. 13B is the first to intervene
However, unlike the first embodiment, thereafter, as shown in FIGS. 3D and 4E, the silicon oxide film 13B as a protective film is formed on the basis of the resist pattern 14 as shown in FIGS.
Is selectively etched to form a protective film 13C, the resist pattern 14 is removed by a stripping solution, and then, as shown in FIG.
As shown in (f), the aluminum pattern 12 as a conductor film is selectively etched using the protective film 13C as a mask to form a conductor pattern film 12A. Therefore, unlike the first embodiment, the side wall of the formed conductor pattern film 12A also does not come into direct contact with the stripping solution for the photosensitive mask 14. As a result, it is possible to prevent the conductor pattern film 12A from being thinned and the width thereof to be reduced, and it is possible to more effectively prevent the resistance of the conductor pattern film 12A from increasing.

In the second embodiment, the silicon oxide film is used as the protective film 13B, but a silicon nitride film or the like which has a selective etching ratio with the conductor film 12 may be used. (3) Third Embodiment A method for manufacturing a semiconductor device according to a third embodiment of the present invention will be described below with reference to FIGS. 5A to 5C and 6D to 6F. To do.

First, as shown in FIG. 5A, a conductor film 12B made of copper and having a film thickness of about 1000 Å is formed on the substrate 11 by a sputtering method or the like. Next, an aluminum film (protective film) 13D having a film thickness of 1000 Å is formed on the conductor film 12B by the sputtering method (FIG. 5B).

Next, a resist is applied on the protective film 13D and a resist pattern 14 (photosensitive mask) corresponding to the conductor pattern film is formed by photolithography (FIG. 5C).

Furthermore, R using a chlorine-based gas such as CCl ₄ is used.
The top surface of the conductor pattern film 12C and the conductor pattern film 12C, which will be wiring layers, etc., by etching the protective film 13D and the conductor film 12B by using the resist pattern 14 as a mask under the condition of an etching rate of 500Å / min. To form a protective film 13E (FIG. 6 (d)).

Next, the resist pattern 14 is peeled off using a peeling solution made of an organic solvent. At this time, since the upper surface of the conductor pattern film 12C is protected by the protective film 13E, it is possible to prevent the reaction with the stripping solution and prevent the film loss (FIG. 6 (e)).

Then, only the protective film 13E is selectively etched using phosphoric acid (FIG. 6 (f)). In this way, the wiring layer 12A having no film thickness reduction is formed, so that the resistance value of the conductor pattern film 12C can be maintained at a low value.

As described above, according to the semiconductor device manufacturing method of the third embodiment of the present invention, the protective film 13E is provided between the resist pattern 14 for patterning the copper film 12B and the copper film 12B. 6D, after the protective film 13D and the copper film 12B are selectively etched based on the resist pattern 14 to form the protective film 13E and the conductor pattern film 12C, as shown in FIG. As shown in FIG. 6 (e), when the resist pattern 14 is peeled off, the resist pattern 14 does not come into direct contact with the peeling liquid of the resist pattern 14 except for the side wall of the formed conductor pattern film 12C. As a result, it is possible to prevent the conductor pattern film 12C from being thinned and to suppress the increase in resistance of the conductor pattern film 12C as much as possible.

Although an aluminum film is used as an example of the protective film 13D and a copper film is used as the conductor film 12B in this embodiment, a copper film is used as an example of the protective film 13D.
An aluminum film can also be used as the conductor film.

Further, as shown in FIG. 6D, the protective film 13 is formed on the resist pattern 14 by the gas containing chlorine.
Although the D and the copper film 12B are selectively etched, it is also possible to sequentially selectively etch the protective film 13D and the copper film 12B based on the resist pattern 14 with a mixed solution containing phosphoric acid and nitric acid.

Further, the protective film 13D is etched based on the resist pattern 14 by using a liquid containing phosphoric acid.
The copper film 12B can be etched and removed using E as a mask.

The aluminum film 13D is used as a protective film.
Since the copper film 12B is used as the conductor film, the handling is easier than the method using a refractory metal such as a molybdenum film which is difficult to handle. (4) Fourth Embodiment A method for manufacturing a semiconductor device according to a fourth embodiment of the present invention will be described below with reference to FIGS. 7 (a) to 7 (c), 8 (d), and (e). To do. The semiconductor device according to the fourth embodiment of the present invention is an inverted staggered type TFT used in a TFT active matrix type display device or the like.

First, a film thickness of 1000Å is formed on the transparent substrate (base) 21.
The aluminum film (conductor film) 22A and the protective film 22B made of molybdenum having a film thickness of 1000 Å are sequentially formed by the sputtering method (FIG. 7A).

Next, the gate electrode 22 having a film thickness of 1000Å is formed by the manufacturing method described in the first embodiment of the present invention (see FIGS. 1 and 2) (FIG. 7B). The gate electrode 22 in this embodiment corresponds to the wiring layer 12A in the first embodiment.

Then, as shown in FIG. 7C, a silicon nitride film 23 having a film thickness of 3000 Å is formed by plasma chemical vapor deposition (hereinafter referred to as P-CVD method) so as to cover the gate electrode wiring 22. To form.

Next, a film thickness of 15 is formed on the silicon nitride film 23.
A 0 Å i-amorphous silicon layer 24 is formed, and a 1500 Å silicon nitride film is formed on the i-amorphous silicon layer 24 by P-CVD. Then, the silicon nitride film is patterned so as to remain above the gate electrode 22 to form a channel protective film 25 that protects the amorphous silicon layer 24 in the region to be the channel region layer. At this time, the amorphous silicon layer 24 under the silicon nitride film 25 becomes the P-type channel region layer 24C, and the channel region layer 24
Both ends of C become an n ⁺ type source region layer 24S and a drain region layer 24D (FIG. 7C).

Next, an n ⁺ amorphous silicon film 26 having a film thickness of 1000 Å doped with phosphorus is formed by the P-CVD method, and a titanium (Ti) film having a film thickness of 1000 Å is formed thereon by the sputtering method. Here, the n ⁺ amorphous silicon film 26 includes a source electrode 27S, a drain electrode 27D,
It is for making ohmic contact between the source region layer 24S and the drain region layer 24D.

Then, the photolithography method is used to
N so that they are separated on the protective film 25. ⁺Amorphous Siri
The con film 26 and the titanium film are patterned, and n⁺Amorph
Source electrode consisting of silicon film 26S / titanium film 27S
28S, n⁺Amorphous silicon film 26D / Titanium film 27D
A drain electrode 28D composed of is formed.

Next, the pixel electrode 29 made of an ITO film having a film thickness of 3000Å is formed on the source electrode 27S, and the drain bus line 30 made of an aluminum film having a film thickness of 1000Å is formed on the drain electrode 27D according to the first aspect of the present invention. It is formed by the manufacturing method of the embodiment. The drain electrode 27D of the embodiment of the present invention corresponds to the base body, and the drain bus line 30 corresponds to the conductor pattern film.

Through the above steps, an inverted staggered TFT is formed (FIG. 8 (d)). After that, when a liquid crystal layer is formed on the entire surface, a TFT active matrix LCD is completed.

As described above, according to the method of manufacturing the semiconductor device of the fourth embodiment of the present invention, when the gate electrode (conductor pattern film) 22 is formed on the transparent substrate (base) 21, Alternatively, when the drain bus line (conductor pattern film) 30 shown in FIG. 8E is formed on the substrate in which the source / drain electrodes 28S and 28D are formed on the transparent substrate (substrate) 21, The semiconductor device manufacturing method of the second invention is used.

Therefore, in the method of manufacturing the TFT, the resistance of the gate electrode 22 or the drain bus line 30 is formed by forming the gate electrode 22 or the drain bus line 30 by the method of manufacturing the semiconductor device of the first or second invention. The value can be kept low.

In this embodiment, the gate electrode 22
Although the same manufacturing method as that of the first embodiment is used for forming the above, the same effects can be obtained by using the manufacturing method of the semiconductor device according to the second and third embodiments.

[0058]

As described above, according to the method of manufacturing a semiconductor device of the present invention, first, a protective film is provided between a photosensitive mask for patterning a conductor film and the conductor film. After interposing, the protective film and the conductor film are selectively etched based on the photosensitive mask to form the protective film and the conductor pattern film, and then the photosensitive mask is peeled off. Therefore,
Since it is possible to protect the upper surface of the conductor pattern film from the stripping liquid of the photosensitive mask and prevent the conductor pattern film from being thinned, it is possible to suppress the increase in resistance of the conductor pattern film as much as possible.

Second, after the protective film is selectively etched based on the photosensitive mask to leave the protective film, the photosensitive mask is removed by a stripping solution, and then the conductor film is selected using the protective film as a mask. The conductor pattern film is formed by etching. Therefore, unlike the first invention, the upper surface and the side wall of the formed conductor pattern film are protected from the stripping solution,
Since the width of the conductor pattern film can be prevented from being reduced and the width of the conductor pattern film can be prevented from being reduced, it is possible to more effectively prevent the resistance of the conductor pattern film from increasing.

Thirdly, a copper film is used as the conductor film and an aluminum film is used as the protective film. in this case,
By using a gas containing chlorine or a liquid containing phosphoric acid and nitric acid, the conductive film and the protective film are sequentially dry-etched and removed on the basis of the photosensitive mask, and then the photosensitive mask is removed. Since the reduction of the pattern film can be prevented, it is possible to prevent the resistance of the conductor pattern film from increasing.

Alternatively, the protective film is etched on the basis of the photosensitive mask using a solution containing phosphoric acid, the photosensitive mask is removed, and then the solution containing nitric acid is used to mask the protective film with the conductor film. By etching / removing the conductive pattern film, it is possible to prevent the conductor pattern film from being thinned and narrowing its width. Therefore, it is possible to more effectively prevent the resistance of the conductor pattern film from increasing.

In the third case, the refractory metal is
The handling is easier than when a titanium film or molybdenum film, which is difficult to handle, is used as the material for the protective film.
Fourth, in the production of a TFT active matrix LCD, when forming a gate electrode (conductor pattern film) on a transparent substrate (base) or on a substrate on which source / drain electrodes are formed on the transparent substrate (base). When the drain bus line (conductor pattern film) is formed on the first or second
The method of manufacturing a semiconductor device according to the invention is used.

Therefore, it is possible to prevent the gate electrode or the drain bus line from being thinned or narrowed and to keep the resistance value of the gate electrode or the drain bus line at a low value.

[Brief description of drawings]

FIG. 1 is a process explanatory diagram (1) of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process explanatory view (No. 2) of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a process explanatory view (No. 1) of the method for manufacturing the semiconductor device according to the second embodiment of the present invention.

FIG. 4 is a process explanatory view (No. 2) of the method for manufacturing the semiconductor device according to the second embodiment of the present invention.

FIG. 5 is a process explanatory view (No. 1) of the method for manufacturing the semiconductor device according to the third embodiment of the present invention.

FIG. 6 is a process explanatory view (No. 2) of the method for manufacturing the semiconductor device according to the third embodiment of the present invention.

FIG. 7 is a process explanatory view (No. 1) of the method for manufacturing the semiconductor device according to the fourth embodiment of the present invention.

FIG. 8 is a process explanatory view (No. 2) of the method for manufacturing the semiconductor device according to the fourth embodiment of the invention.

FIG. 9 is a process explanatory view of the method of manufacturing the semiconductor device according to the conventional example.

[Explanation of symbols]

11 substrate, 12 aluminum film (conductor film), 12A, 12C conductor pattern film, 12B copper film (conductor film), 13 molybdenum film (protective film), 13A, 13C, 13E, 22B protective film, 13B silicon oxide Film (protective film), 13D aluminum film (protective film), 14 resist pattern (photosensitive mask), 21 transparent substrate (base), 22 gate electrode (conductor pattern film), 22A conductor film, 23 silicon nitride film ( Gate insulating film), 24 amorphous silicon layer (operating semiconductor layer), 24S, 24D S / D region layer, 24C channel region layer, 25 channel protective film, 26S, 26D n ⁺ amorphous silicon film (ohmic contact layer), 27S, 27D Ti film, 28S, 28D S / D electrode, 29 pixel electrode, 30 drain busler Down (conductive pattern layer).

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical indication location H01L 21/336 29/784 (72) Inventor Takashi Shinta 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Incorporated (72) Inventor Kazumasa Nomura 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Fujitsu Limited

Claims (14)

[Claims] 1. A step of forming a conductor film (12) on a substrate (11), a step of forming a protective film (13) on the conductor film (12), and the protective film (13). ), A step of forming a photosensitive mask (14) by patterning the photosensitive film after forming a photosensitive film on the protective film (13) based on the photosensitive mask (14).
And the conductive film (12) is sequentially removed by etching,
A method of manufacturing a semiconductor device, comprising: a step of forming a conductor pattern film (12A); and a step of peeling off the photosensitive mask (14). 2. A step of forming a conductor film (12) on a substrate (11), a step of forming a protective film (13) on the conductor film (12), and the protective film (13). ), A step of forming a photosensitive mask (14) by patterning the photosensitive film after forming a photosensitive film on the protective film (13) based on the photosensitive mask (14).
And a step of removing the photosensitive mask (14), and using the patterned protective film (13A) as a mask to etch and remove the conductor film (12). And a step of forming a patterned film (12A). 3. The conductor film (12) is made of aluminum,
3. The method of manufacturing a semiconductor device according to claim 1 or 2, wherein the method comprises a metal film containing any one of copper. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the protective film (13) is a metal film containing any one of molybdenum, titanium and tungsten. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the protective film (13) is a semiconductor film containing one of silicon and germanium. 6. A metal film containing one of aluminum and copper is used as the conductor film (12), which is based on the photosensitive mask (14) by reactive ion etching using a gas containing chlorine. The method for manufacturing a semiconductor device according to claim 4 or 5, wherein the protective film (13) and the conductor film (12) are sequentially etched and removed to form a conductor pattern film (12A). . 7. The protective film (13) is a silicon nitride film,
3. The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film is an insulator film containing any one of silicon oxide films. 8. The conductor film (12) is a metal film containing one of aluminum and copper, and the protective film (13) is dry-etched with a gas containing fluorine to obtain the conductor film. 8. The method for manufacturing a semiconductor device according to claim 7, wherein (12) is dry-etched using a gas containing chlorine. 9. A copper film is used as the conductor film (12),
The method of manufacturing a semiconductor device according to claim 1 or 2, wherein an aluminum film is used as the protective film (13). 10. The conductor pattern film (12A) is formed by sequentially etching and removing the protective film (13) and the conductor film (12) using a liquid containing a liquid containing phosphoric acid and nitric acid. 10. The method for manufacturing a semiconductor device according to claim 9, wherein. 11. The conductive pattern film (12A) is formed by sequentially dry-etching and removing the protective film (13) and the conductive film (12) using a gas containing chlorine. The method for manufacturing a semiconductor device according to claim 9. 12. The protective film (1) is formed by using a liquid containing phosphoric acid.
After selectively etching and removing 3), the conductor film (12) is etched and removed with a solution containing nitric acid using the protective film (13) as a mask to remove the conductor pattern film (12).
10. The method for manufacturing a semiconductor device according to claim 9, wherein A) is formed. 13. A light-shielding gate electrode (22) is formed on a transparent substrate (21), and a gate insulating film (23) is provided so as to cover the gate electrode (22). An operating semiconductor layer (24) is provided on the (23), and a channel protective film (25) is formed on the operating semiconductor layer (24) in a region above the gate electrode (22). Source / drain electrodes (28S, 28D) are formed in contact with the operating semiconductor layers (24) on both sides of the channel protective film (25),
A method of manufacturing a semiconductor device, comprising a pixel electrode (29) and a drain bus line (30) connected to the source / drain electrodes (28S, 28D), wherein the base (11) is the transparent substrate ( 21) and the conductor pattern film (12A) is the gate electrode (22). 13. The method for manufacturing a semiconductor device according to claim 1, wherein. 14. A light-shielding gate electrode (22) is formed on a transparent substrate (21), and a gate insulating film (23) is provided so as to cover the gate electrode (22). An operating semiconductor layer (24) is provided on the (23), and a channel protective film (25) is formed on the operating semiconductor layer (24) in a region above the gate electrode (22). Source / drain electrodes (28S, 28D) are formed in contact with the operating semiconductor layers (24) on both sides of the channel protective film (25),
A method of manufacturing a semiconductor device, comprising a pixel electrode (29) and a drain bus line (30) connected to the source / drain electrodes (28S, 28D), wherein the substrate (11) is the source / drain. Electrode (28S, 28
13. The transparent substrate (21) after D) is formed, and the conductor pattern film (12A) is a drain bus line (30), according to any one of claims 1 to 12. Of manufacturing a semiconductor device of.