JPH062113A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPH062113A JPH062113A JP16593192A JP16593192A JPH062113A JP H062113 A JPH062113 A JP H062113A JP 16593192 A JP16593192 A JP 16593192A JP 16593192 A JP16593192 A JP 16593192A JP H062113 A JPH062113 A JP H062113A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- nitrogen
- film
- vapor deposition
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000007740 vapor deposition Methods 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 239000011521 glass Substances 0.000 description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 12
- 239000004926 polymethyl methacrylate Substances 0.000 description 12
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000012788 optical film Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JKJWYKGYGWOAHT-UHFFFAOYSA-N bis(prop-2-enyl) carbonate Chemical compound C=CCOC(=O)OCC=C JKJWYKGYGWOAHT-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜形成方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method.
【０００２】[0002]
【従来技術とその問題点】非加熱状態で樹脂基材上にＴ
ｉＯ2 、ＺｒＯ2 などの蒸着薄膜を形成させる場合に
は、加熱状態でガラス基材上に同様の蒸着薄膜を形成さ
せる場合に比して、蒸着膜の屈折率は、著るしく小さく
なる。例えば、ＴｉＯ2 蒸着膜を２００℃以上の加熱系
で形成させる場合には、その屈折率は、２．４程度とな
るのに対し、非加熱系で得られるＴｉＯ2 蒸着膜の屈折
率は、２以下にしかならない。このことは、ＺｒＯ2 に
ついても同様であり、非加熱系では、屈折率１．９程度
の蒸着膜しか得られない。2. Prior Art and its Problems T on a resin base material without heating
When a vapor-deposited thin film such as iO 2 or ZrO 2 is formed, the refractive index of the vapor-deposited film is significantly smaller than that when a similar vapor-deposited thin film is formed on a glass substrate in a heated state. For example, when a TiO 2 vapor deposition film is formed in a heating system at 200 ° C. or higher, its refractive index is about 2.4, whereas a TiO 2 vapor deposition film obtained in a non-heating system has a refractive index of No more than 2. This also applies to ZrO 2 , and in the non-heated system, only a vapor deposition film having a refractive index of about 1.9 can be obtained.
【０００３】イオンアシスト法によれば、非加熱系での
蒸着によっても、屈折率２以上のＴｉＯ2 蒸着膜を得る
ことができるものの、装置が高価であるため、製造コス
トが高くなる。According to the ion assist method, a TiO 2 vapor deposition film having a refractive index of 2 or more can be obtained even by vapor deposition in a non-heated system, but the apparatus is expensive and the manufacturing cost is high.
【０００４】[0004]
【発明が解決しようとする課題】したがって、本発明
は、基材に対する密着性に優れ、屈折率の高い蒸着薄膜
を低い製造コストで製造する方法を提供することを主な
目的とする。SUMMARY OF THE INVENTION Therefore, the main object of the present invention is to provide a method for producing a vapor-deposited thin film having excellent adhesion to a substrate and a high refractive index at a low production cost.
【０００５】[0005]
【課題を解決するための手段】本発明者は、上記の様な
技術の現状に鑑みて研究を進めた結果、従来行なわれて
いる系内排気後の酸素ガスの導入に代えて、窒素含有ガ
スを導入し、蒸着操作を行なう場合には、蒸着薄膜の屈
折率が大幅に増大し、基材と蒸着薄膜との密着性も著し
く改善されることを見出した。As a result of conducting research in view of the current state of the art as described above, the present inventor has found that instead of the conventional introduction of oxygen gas after system exhaust, nitrogen-containing It has been found that when a gas is introduced and vapor deposition operation is performed, the refractive index of the vapor deposited thin film is significantly increased, and the adhesion between the substrate and the vapor deposited thin film is also significantly improved.
【０００６】即ち、本発明は、下記の薄膜形成方法を提
供するものである：１． 蒸着法により減圧下に基材上
に酸化物誘電体の薄膜を形成するに際し、系内を５×１
０-5Torr以下に減圧した後、窒素含有ガスを系内に導入
して０．８〜２．０×１０-4Torrの減圧条件下に蒸着操
作を行なうことを特徴とする薄膜形成方法。That is, the present invention provides the following thin film forming method: When forming the oxide dielectric thin film on the substrate under reduced pressure by the vapor deposition method, the inside of the system was set to 5 × 1.
A method for forming a thin film, which comprises depressurizing to 0 -5 Torr or less, then introducing a nitrogen-containing gas into the system, and performing a vapor deposition operation under a depressurized condition of 0.8 to 2.0 × 10 -4 Torr.
【０００７】２． 窒素含有ガスが、空気または空気よ
りも窒素濃度の高い窒素−酸素混合ガスである上記項１
に記載の薄膜形成方法。2. Item 1. The nitrogen-containing gas is air or a nitrogen-oxygen mixed gas having a nitrogen concentration higher than that of air.
The method for forming a thin film as described in.
【０００８】本発明で薄膜形成成分となるものは、チタ
ン、ジルコニウム、セリウム、ケイ素、アルミニウムな
どの金属酸化物である。これらの金属酸化物中でも、酸
化チタン（ＴｉＯ、ＴｉＯ2 、Ｔｉ2 Ｏ3 など）、Ｚｒ
Ｏ2 などがより好ましい。The thin film forming component in the present invention is a metal oxide such as titanium, zirconium, cerium, silicon or aluminum. Among these metal oxides, titanium oxide (TiO, TiO 2 , Ti 2 O 3, etc.), Zr
O 2 and the like are more preferable.
【０００９】基材としては、各種の透明樹脂類（ポリメ
チルメタクリレート、ポリカーボネート、ジグリコール
ジアリルカーボネートなど）、ガラスなどが挙げられ
る。特に、従来技術によりポリメチルメタクリレートな
どのアクリル樹脂系基材にＴｉＯ2 薄膜を蒸着形成する
場合には、密着性が極めて低いが、本発明方法によれ
ば、アクリル樹脂系基材を使用する場合にも、蒸着膜と
の密着性が著しく改善される。Examples of the base material include various transparent resins (polymethyl methacrylate, polycarbonate, diglycol diallyl carbonate, etc.), glass and the like. In particular, when a TiO 2 thin film is formed by vapor deposition on an acrylic resin base material such as polymethylmethacrylate by the conventional technique, the adhesion is extremely low. However, according to the method of the present invention, when an acrylic resin base material is used. In addition, the adhesion with the deposited film is significantly improved.
【００１０】本発明で採用する蒸着方法は、装置内を５
×１０-5Torrとなるまで排気減圧した後、窒素含有ガス
を導入する以外の点では、従来技術と異なるところはな
い。即ち、抵抗加熱による蒸着成膜法、電子加熱による
蒸着成膜法などをそのまま採用することができる。According to the vapor deposition method adopted in the present invention, 5
There is no difference from the prior art except that the nitrogen-containing gas is introduced after the exhaust pressure is reduced to × 10 −5 Torr. That is, the vapor deposition film-forming method by resistance heating, the vapor deposition film-forming method by electronic heating, etc. can be adopted as it is.
【００１１】装置内を５×１０-5Torr以下に排気減圧し
た後に導入する窒素含有ガスとしては、空気または空気
よりも高い窒素濃度の窒素−酸素混合ガスを使用する。
空気よりも窒素濃度の低い窒素−酸素混合ガスを使用し
ても、蒸着膜の密着性は改善されるが、改善の程度は低
い。窒素含有ガスの導入量は、蒸着操作時の装置内圧力
が、０．８〜２．０×１０-4Torrとなる量である。Air or a nitrogen-oxygen mixed gas having a nitrogen concentration higher than that of air is used as the nitrogen-containing gas introduced after the pressure in the apparatus is reduced to 5 × 10 -5 Torr or less.
Even when a nitrogen-oxygen mixed gas having a nitrogen concentration lower than that of air is used, the adhesion of the deposited film is improved, but the degree of improvement is low. The introduction amount of the nitrogen-containing gas is such that the pressure inside the apparatus during the vapor deposition operation becomes 0.8 to 2.0 × 10 −4 Torr.
【００１２】本発明方法は、基材への多層膜の形成にも
適用できる。この場合、異種の酸化物の薄膜を順次形成
することも可能である。The method of the present invention can also be applied to the formation of a multilayer film on a substrate. In this case, it is also possible to sequentially form thin films of different oxides.
【００１３】[0013]
【発明の効果】本発明によれば、基材上に形成された金
属酸化物薄膜の屈折率を高めることができる。また、基
材と金属酸化薄膜との密着性も改善される。According to the present invention, the refractive index of the metal oxide thin film formed on the substrate can be increased. Also, the adhesion between the base material and the metal oxide thin film is improved.
【００１４】[0014]
【実施例】以下に実施例を示し、本発明の特徴とすると
ころをより一層明確にする。EXAMPLES Examples will be shown below to further clarify the features of the present invention.
【００１５】実施例１ 電子銃を備えた真空蒸着装置内にガラス基板（ＢＫ−
７）およびポリメチルメタクリレート基板を設置した
後、装置内を３×１０-5Torrまで排気した。次いで、装
置内に大気を導入し、圧力を１×１０-4に保持した状態
で２オングストローム／秒の蒸着速度で光学膜厚＝λ／
４のＴｉＯ2 薄膜を形成させた。Example 1 A glass substrate (BK-) was placed in a vacuum vapor deposition apparatus equipped with an electron gun.
After installing 7) and the polymethylmethacrylate substrate, the inside of the apparatus was evacuated to 3 × 10 −5 Torr. Then, the atmosphere was introduced into the apparatus, the optical film thickness = λ / at a deposition rate of 2 Å / sec while maintaining the pressure at 1 × 10 −4.
No. 4 TiO 2 thin film was formed.
【００１６】得られた蒸着膜の反射率を測定し、反射率
から計算により膜の屈折率を求めたところ、λ＝５５０
ｎｍにおいて、ガラス基板上で２．０４、ポリメチルメ
タクリレート基板上で２．０５であった。The reflectance of the obtained vapor-deposited film was measured, and the refractive index of the film was calculated from the reflectance. Λ = 550
nm was 2.04 on a glass substrate and 2.05 on a polymethylmethacrylate substrate.
【００１７】また、得られた膜の密着性をテープ剥離法
により測定したところ、ポリメチルメタクリレート基板
では、０／１００（剥離無し）であったが、ガラス基板
では１００／１００（剥離）であった。Further, the adhesion of the obtained film was measured by a tape peeling method, and it was 0/100 (no peeling) on the polymethylmethacrylate substrate, but it was 100/100 (peeling) on the glass substrate. It was
【００１８】比較例１ 装置内の排気後に導入する気体として酸素を使用する以
外は実施例１と同様にしてＴｉＯ2 薄膜を形成させた。Comparative Example 1 A TiO 2 thin film was formed in the same manner as in Example 1 except that oxygen was used as a gas introduced after exhausting the inside of the apparatus.
【００１９】得られた蒸着膜の屈折率は、λ＝５５０ｎ
ｍにおいて、ガラス基板上で１．９３、ポリメチルメタ
クリレート基板上で１．９４であった。The refractive index of the obtained vapor deposition film is λ = 550n
m was 1.93 on the glass substrate and 1.94 on the polymethylmethacrylate substrate.
【００２０】また、得られた膜の密着性は極めて悪く、
テープ剥離法により測定したところ、いずれの場合に
も、１００／１００（剥離）であった。Further, the adhesion of the obtained film is extremely poor,
When measured by the tape peeling method, it was 100/100 (peeling) in all cases.
【００２１】実施例２ 蒸着成分としてＴｉＯを使用する以外は実施例１と同様
にしてＴｉＯ薄膜を形成させた。Example 2 A TiO thin film was formed in the same manner as in Example 1 except that TiO was used as the vapor deposition component.
【００２２】得られた蒸着膜の反射率を測定し、反射率
から計算により膜の屈折率を求めたところ、２．０８で
あった。The reflectance of the obtained vapor-deposited film was measured, and the refractive index of the film was calculated from the reflectance and found to be 2.08.
【００２３】また、得られて膜の密着性をテープ剥離法
により測定したところ、０／１００（剥離無し）であっ
た。The adhesion of the obtained film was measured by the tape peeling method and found to be 0/100 (no peeling).
【００２４】比較例２ 装置内の排気後に導入する気体として酸素を使用する以
外は実施例２と同様にしてＴｉＯ薄膜を形成させた。Comparative Example 2 A TiO thin film was formed in the same manner as in Example 2 except that oxygen was used as a gas introduced after exhausting the inside of the apparatus.
【００２５】得られた蒸着膜の屈折率は、１．９３であ
った。The vapor deposition film thus obtained had a refractive index of 1.93.
【００２６】また、得られて膜の密着性はやはり極めて
悪く、テープ剥離法により測定したところ、１００／１
００（剥離）であった。Further, the adhesion of the obtained film is still extremely poor, and it was 100/1 when measured by the tape peeling method.
It was 00 (peeling).
【００２７】実施例３ 蒸着成分としＺｒＯ2 を使用する以外は実施例１と同様
にしてＺｒＯ2 薄膜を形成させた。Example 3 A ZrO 2 thin film was formed in the same manner as in Example 1 except that ZrO 2 was used as the vapor deposition component.
【００２８】得られた蒸着膜の反射率を測定し、反射率
から計算により膜の屈折率を求めたところ、１．９７で
あった。The reflectance of the obtained vapor-deposited film was measured, and the refractive index of the film was calculated from the reflectance to find 1.97.
【００２９】また、得られて膜の密着性をテープ剥離法
により測定したところ、０／１００（剥離無し）であっ
た。Further, the adhesion of the obtained film was measured by the tape peeling method, and it was 0/100 (no peeling).
【００３０】比較例３ 装置内の排気後に導入する気体として酸素を使用する以
外は実施例３と同様にしてＺｒＯ2 薄膜を形成させた。Comparative Example 3 A ZrO 2 thin film was formed in the same manner as in Example 3 except that oxygen was used as the gas introduced after the exhaust in the apparatus.
【００３１】得られた蒸着膜の屈折率は、１．８８であ
った。The vapor deposition film thus obtained had a refractive index of 1.88.
【００３２】実施例４ 抵抗加熱体を備えた真空蒸着装置内にガラス基板（ＢＫ
−７）およびポリメチルメタクリレート基板を設置した
後、装置内を３×１０-5Torrまで排気した。次いで、装
置内に大気を導入し、圧力を１×１０-4に保持した状態
で、光学膜厚＝λ／４のＴｉＯ2 薄膜を形成させた。Example 4 A glass substrate (BK) was placed in a vacuum vapor deposition apparatus equipped with a resistance heating element.
-7) and the polymethylmethacrylate substrate were installed, and then the inside of the apparatus was evacuated to 3 × 10 -5 Torr. Next, an atmosphere was introduced into the apparatus and a TiO 2 thin film having an optical film thickness of λ / 4 was formed while maintaining the pressure at 1 × 10 −4 .
【００３３】得られた蒸着膜の反射率を測定し、反射率
から計算により膜の屈折率を求めたところ、λ＝５５０
ｎｍにおいて、ガラス基板上で２．１０、ポリメチルメ
タクリレート基板上で２．１０であった。The reflectance of the obtained vapor-deposited film was measured, and the refractive index of the film was calculated from the reflectance. Λ = 550
nm was 2.10 on a glass substrate and 2.10 on a polymethylmethacrylate substrate.
【００３４】また、得られた膜の密着性をテープ剥離法
により測定したところ、ポリメチルメタクリレート基板
およびガラス基板のいずれにおいても、０／１００（剥
離無し）であった。The adhesion of the obtained film was measured by the tape peeling method, and it was 0/100 (no peeling) on both the polymethylmethacrylate substrate and the glass substrate.
【００３５】比較例４ 装置内の排気後に導入する気体として酸素を使用する以
外は実施例４と同様にしてＴｉＯ2 薄膜を形成させた。Comparative Example 4 A TiO 2 thin film was formed in the same manner as in Example 4 except that oxygen was used as a gas introduced after exhausting the inside of the apparatus.
【００３６】得られた蒸着膜の屈折率は、λ＝５５０ｎ
ｍにおいて、ガラス基板上で１．９６、ポリメチルメタ
クリレート基板上で１．９５であった。The refractive index of the obtained vapor deposition film is λ = 550n.
m was 1.96 on the glass substrate and 1.95 on the polymethylmethacrylate substrate.
【００３７】また、得られた膜の密着性は極めて悪く、
テープ剥離法により測定したところ、いずれの場合に
も、１００／１００（剥離）であった。Further, the adhesion of the obtained film is extremely poor,
When measured by the tape peeling method, it was 100/100 (peeling) in all cases.
【００３８】実施例５ 真空蒸着装置内を３×１０-5Torrまで排気した後、装置
内に酸素を導入し、圧力を１×１０-4に保持した状態と
した以外は実施例１と同様にして、光学膜厚＝λ／４の
ＴｉＯ2 薄膜を形成させた。Example 5 The same as Example 1 except that the inside of the vacuum vapor deposition apparatus was evacuated to 3 × 10 −5 Torr and then oxygen was introduced into the apparatus to maintain the pressure at 1 × 10 −4. Then, a TiO 2 thin film having an optical film thickness of λ / 4 was formed.
【００３９】得られた蒸着膜の反射率を測定し、反射率
から計算により膜の屈折率を求めたところ、λ＝５５０
ｎｍにおいて、ガラス基板上で２．０３、ポリメチルメ
タクリレート基板上で２．０６であった。The reflectance of the obtained vapor deposition film was measured, and the refractive index of the film was calculated from the reflectance. Λ = 550
nm was 2.03 on a glass substrate and 2.06 on a polymethylmethacrylate substrate.
【００４０】また、得られた膜の密着性をテープ剥離法
により測定したところ、ポリメチルメタクリレート基板
およびガラス基板のいずれにおいても、０／１００（剥
離無し）であった。The adhesion of the obtained film was measured by a tape peeling method, and it was 0/100 (no peeling) on both the polymethylmethacrylate substrate and the glass substrate.
Claims (2)
体の薄膜を形成するに際し、系内を５×１０-5Torr以下
に減圧した後、窒素含有ガスを系内に導入して０．８〜
２．０×１０-4Torrの減圧条件下に蒸着操作を行なうこ
とを特徴とする薄膜形成方法。1. When forming an oxide dielectric thin film on a substrate under reduced pressure by a vapor deposition method, the pressure in the system is reduced to 5 × 10 −5 Torr or less, and then a nitrogen-containing gas is introduced into the system. 0.8 ~
A method for forming a thin film, which comprises performing a vapor deposition operation under a reduced pressure of 2.0 × 10 −4 Torr.
素濃度の高い窒素−酸素混合ガスである請求項１に記載
の薄膜形成方法。2. The thin film forming method according to claim 1, wherein the nitrogen-containing gas is air or a nitrogen-oxygen mixed gas having a nitrogen concentration higher than that of air.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593192A JPH062113A (en) | 1992-06-24 | 1992-06-24 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16593192A JPH062113A (en) | 1992-06-24 | 1992-06-24 | Formation of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH062113A true JPH062113A (en) | 1994-01-11 |
Family
ID=15821736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16593192A Pending JPH062113A (en) | 1992-06-24 | 1992-06-24 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062113A (en) |
-
1992
- 1992-06-24 JP JP16593192A patent/JPH062113A/en active Pending
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