JPH062116U - Magnetoresistive element - Google Patents

Magnetoresistive element

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Publication number
JPH062116U
JPH062116U JP047879U JP4787992U JPH062116U JP H062116 U JPH062116 U JP H062116U JP 047879 U JP047879 U JP 047879U JP 4787992 U JP4787992 U JP 4787992U JP H062116 U JPH062116 U JP H062116U
Authority
JP
Japan
Prior art keywords
magnetic
midpoint potential
magnetoresistive element
power supply
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP047879U
Other languages
Japanese (ja)
Inventor
禎 田口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nidec Instruments Corp
Original Assignee
Sankyo Seiki Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sankyo Seiki Manufacturing Co Ltd filed Critical Sankyo Seiki Manufacturing Co Ltd
Priority to JP047879U priority Critical patent/JPH062116U/en
Publication of JPH062116U publication Critical patent/JPH062116U/en
Withdrawn legal-status Critical Current

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

(57)【要約】 【目的】 出力電圧として得る中点電位を出力波形を歪
ませることなく調整できるようにする。 【構成】 各々強磁性薄膜からなる第1の感磁ストライ
プS1と第2の感磁ストライプS2のいずれか一方に非
磁性抵抗体Tを直列に接続する。この非磁性抵抗体Tを
接続した分中点電位を変化させることができるので、中
点電位を電源電圧の1/2以外の値に調整することがで
きる。
(57) [Summary] [Purpose] The midpoint potential obtained as the output voltage can be adjusted without distorting the output waveform. [Structure] A non-magnetic resistor T is connected in series to either one of a first magnetic sensitive stripe S1 and a second magnetic sensitive stripe S2 each made of a ferromagnetic thin film. Since the midpoint potential can be changed by connecting the nonmagnetic resistor T, the midpoint potential can be adjusted to a value other than 1/2 of the power supply voltage.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、電源電圧の1/2以外の値の出力電圧を得るようにした磁気抵抗素 子に関する。 The present invention relates to a magnetoresistive element adapted to obtain an output voltage having a value other than 1/2 of the power supply voltage.

【0002】[0002]

【従来の技術】[Prior art]

従来の磁気抵抗素子として図4に示したような構成のものが知られている。電 源端子T1と接地端子T2との間に、各々強磁性薄膜からなる第1の感磁ストラ イプS1と第2の感磁ストライプS2とが互いに平行になるように配置されて直 列に接続され、第1及び第2の感磁ストライプS1,S2の接続点から出力端子 T3を介して出力電圧が得られるようになっている。 A conventional magnetoresistive element having a structure as shown in FIG. 4 is known. Between the power supply terminal T1 and the ground terminal T2, the first magnetic sensitive stripes S1 and the second magnetic sensitive stripes S2 each made of a ferromagnetic thin film are arranged in parallel with each other and connected in series. The output voltage is obtained from the connection point of the first and second magnetic sensitive stripes S1 and S2 via the output terminal T3.

【0003】 ここで第1及び第2の感磁ストライプS1,S2の抵抗を各々R1,R2とす るとR1=R2に設定され、電源端子T1と接地端子T2との間には電源電圧V ccが接続される。破線で囲んだ領域Mは磁界領域を示している。このような構成 の磁気抵抗素子では出力端子T3から中点電位Vcを出力電圧として得ているが 、通常この値は電源電圧Vccの1/2である。Here, assuming that the resistances of the first and second magnetic sensitive stripes S1 and S2 are R1 and R2, respectively, R1 = R2 is set, and the power supply voltage V is set between the power supply terminal T1 and the ground terminal T2. cc is connected. A region M surrounded by a broken line shows a magnetic field region. In the magnetoresistive element having such a configuration, the midpoint potential Vc is obtained as the output voltage from the output terminal T3, but normally this value is 1/2 of the power supply voltage Vcc.

【0004】 磁気抵抗素子の出力端子T3から得られる出力電圧は、図示しないオペアンプ 等に入力され、波形整形あるいは基準電圧との比較が行われる。しかしながら、 オペアンプの出力において、回路上基準電圧は電源電圧Vccの1/2より、高め の設定の方が出力波形を最も効果的にすることができることがある。ところが、 このことを前述のように磁気抵抗素子の中点電位Vcを電源電圧Vccの1/2と した場合には、基準電圧との電位差により電源ノイズを増幅してしまい、オペア ンプの出力に大きなノイズを発生してしまうという不具合を生じる。The output voltage obtained from the output terminal T3 of the magnetoresistive element is input to an operational amplifier (not shown) or the like for waveform shaping or comparison with a reference voltage. However, in the output of the operational amplifier, it may be possible to make the output waveform most effective by setting the reference voltage on the circuit higher than 1/2 of the power supply voltage Vcc. However, as described above, when the midpoint potential Vc of the magnetoresistive element is set to 1/2 of the power supply voltage Vcc, the power supply noise is amplified due to the potential difference from the reference voltage, and the output of the operational amplifier is output. This causes a problem that large noise is generated.

【0005】 そこで、磁気抵抗素子の出力電圧の中点電位Vcを上記オペアンプに合致させ るべく、中点電位Vcを変化させることが試みられている。その第1の試みは図 4において、例えば第1の感磁ストライプS1の幅を大きくしてその抵抗値R1 を変化させて、中点電位Vcを変位させようとするものである。第2の試みは図 4において、例えば第2の感磁ストライプS2を増設して抵抗値R2を高くして 、中点電位Vcを変位させようとするものである。その他の第3の試みとして、 一方の感磁ストライプに抵抗体を直列接続して、中点電位Vcを変化させること も行われている。Therefore, it has been attempted to change the midpoint potential Vc so that the midpoint potential Vc of the output voltage of the magnetoresistive element matches the operational amplifier. The first attempt is to displace the midpoint potential Vc by increasing the width of the first magnetosensitive stripe S1 and changing the resistance value R1 thereof in FIG. 4, for example. The second attempt is to displace the midpoint potential Vc by adding, for example, the second magnetic sensitive stripe S2 to increase the resistance value R2 in FIG. As another third attempt, a resistor is connected in series to one magnetic sensitive stripe to change the midpoint potential Vc.

【0006】[0006]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかしながら従来の磁気抵抗素子では、第1あるいは第2の試みのようにして 中点電位Vcを変位させようとすると、第1及び第2の磁気ストライプS1,S 2に変化磁界を加えると、当然ながら各磁気ストライプの抵抗値変化量が異なっ てしまうようになる。この結果、中点電位Vcの出力波形が歪んでしまう問題が ある。また第3の試みにおいても、抵抗値を調整する必要が生じ、しかも温度変 化によって中点電位にドリフトが生じて検出精度が悪化する問題もある。 However, in the conventional magnetoresistive element, when it is attempted to displace the midpoint potential Vc as in the first or second attempt, when a changing magnetic field is applied to the first and second magnetic stripes S1 and S2, naturally, However, the amount of change in resistance of each magnetic stripe becomes different. As a result, there is a problem that the output waveform of the midpoint potential Vc is distorted. Also in the third attempt, there is a problem that the resistance value needs to be adjusted, and further, the drift of the midpoint potential due to the temperature change deteriorates the detection accuracy.

【0007】 本考案は以上のような問題に対処してなされたもので、出力電圧として得る中 点電位を出力波形を歪ませることなく電源電圧の1/2以外の値に調整可能にし た磁気抵抗素子を提供することを目的とするものである。The present invention has been made in consideration of the above problems, and it is possible to adjust the midpoint potential obtained as the output voltage to a value other than 1/2 of the power supply voltage without distorting the output waveform. It is intended to provide a resistance element.

【0008】[0008]

【課題を解決するための手段】[Means for Solving the Problems]

上記目的を達成するために本考案は、各々強磁性薄膜からなる第1の感磁スト ライプと第2の感磁ストライプとが直列に接続され、この接続点から中点電位を 出力電圧として得る磁気抵抗素子であって、前記第1又は第2の感磁ストライプ の一方に非磁性抵抗体を直列に接続して前記出力電圧となる中点電位の値を調整 したことを特徴とするものである。 In order to achieve the above object, the present invention has a first magnetic sensitive strip and a second magnetic sensitive stripe, each of which is made of a ferromagnetic thin film, connected in series, and a midpoint potential is obtained as an output voltage from this connection point. A magnetoresistive element, characterized in that a nonmagnetic resistor is connected in series to one of the first or second magnetically sensitive stripes to adjust the value of the midpoint potential which becomes the output voltage. is there.

【0009】[0009]

【作用】[Action]

第1の感磁ストライプと第2の感磁ストライプのいずれか一方に非磁性抵抗体 を直列に接続することにより、非磁性抵抗体を接続した分中点電位を調整するこ とができる。しかも非磁性抵抗体を用いると共に、第1及び第2の感磁ストライ プは等しい形状のものを用いるので、磁気による抵抗変化も等しく保たれるため 出力波形が歪むことはない。 By connecting the non-magnetic resistor in series to either one of the first and second magneto-sensitive stripes, the midpoint potential can be adjusted by the amount of the non-magnetic resistor connected. In addition, since the non-magnetic resistor is used and the first and second magneto-sensitive strips have the same shape, the change in resistance due to magnetism is also kept equal, so that the output waveform is not distorted.

【0010】[0010]

【実施例】【Example】

以下図面を参照して本考案の実施例を説明する。図1は本考案の磁気抵抗素子 の第1の実施例を示す構成図で、電源端子T1と接地端子T2との間に、各々強 磁性薄膜からなる第1の感磁ストライプS1と第2の感磁ストライプS2とが互 いに平行になるように配置されて直列に接続されている。ここで第1及び第2の 感磁ストライプS1,S2の抵抗R1,R2はR1=R2に設定される。また、 例えば第2のストライプS2と接地端子T2との間には、第2のストライプS2 にこれと直交するような方向に配置された非磁性抵抗体Tが直列に接続される。 電源端子T1と接地端子T2との間には電源電圧Vccが接続される。破線で囲ん だ領域Mは磁界領域を示している。 An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing a first embodiment of a magnetoresistive element of the present invention, in which a first magnetic sensitive stripe S1 and a second magnetic sensitive stripe S1 each made of a ferromagnetic thin film are provided between a power supply terminal T1 and a ground terminal T2. The magnetic stripes S2 are arranged in parallel with each other and connected in series. Here, the resistances R1 and R2 of the first and second magnetic sensitive stripes S1 and S2 are set to R1 = R2. Further, for example, between the second stripe S2 and the ground terminal T2, a non-magnetic resistor T arranged in a direction orthogonal to the second stripe S2 is connected in series. A power supply voltage Vcc is connected between the power supply terminal T1 and the ground terminal T2. A region M surrounded by a broken line shows a magnetic field region.

【0011】 図3は本実施例の磁気抵抗素子の等価回路を示している。R3は非磁性抵抗体 Tの抵抗を示している。ここで出力端子T3から得られる中点電位Vcは次式の ように示される。 Vc={(R2+R3)/(R1+R2+R3)}×Vcc ここで、Vcc=5V、R1=R2=R、R3=0.5Rに設定したものとする と前式に基づき、 Vc=3(V)が得られる。 一方、図5の従来例では、Vc={R2/(R1+R2)}×Vccとなるので 、Vc=2.5(V)が得られる。FIG. 3 shows an equivalent circuit of the magnetoresistive element of this embodiment. R3 represents the resistance of the non-magnetic resistor T. Here, the midpoint potential Vc obtained from the output terminal T3 is expressed by the following equation. Vc = {(R2 + R3) / (R1 + R2 + R3)} × Vcc Here, if Vcc = 5V, R1 = R2 = R, and R3 = 0.5R are set, Vc = 3 (V) becomes can get. On the other hand, in the conventional example of FIG. 5, since Vc = {R2 / (R1 + R2)} × Vcc, Vc = 2.5 (V) is obtained.

【0012】 すなわち、本実施例によれば非磁性抵抗体Tを第2の感磁ストライプS2に直 列に接続することにより、これを接続した分出力端子T3から得られる出力電圧 となる中点電位を電源電圧Vccの1/2以外の値に調整することができる。本実 施例の場合電源電圧Vcc=5(V)に対して、中点電位Vc=3(V)が得られ るので、0.5(V)だけ電源電圧Vccから移動させることができることになる 。この場合、第1及び第2の感磁ストライプS1,S2は各抵抗R1,R2が等 しくなるように等しい形状に設けることにより、磁界領域Mによる抵抗変化は等 しく保たれる。これによって出力端子T3から得られる出力波形を歪ませること なく、中点電位を電源電圧の1/2以外の値に調整することができる。That is, according to the present embodiment, by connecting the non-magnetic resistor T in series with the second magnetic sensitive stripe S2, the output voltage obtained from the output terminal T3 is the midpoint corresponding to the connection. The potential can be adjusted to a value other than 1/2 of the power supply voltage Vcc. In the case of the present embodiment, since the midpoint potential Vc = 3 (V) is obtained for the power supply voltage Vcc = 5 (V), it is possible to shift the power supply voltage Vcc by 0.5 (V). Become . In this case, the first and second magneto-sensitive stripes S1 and S2 are provided in the same shape so that the resistors R1 and R2 are equal, so that the resistance change due to the magnetic field region M is kept equal. As a result, the midpoint potential can be adjusted to a value other than 1/2 of the power supply voltage without distorting the output waveform obtained from the output terminal T3.

【0013】 非磁性抵抗体Tは、可能な限り感磁ストライプとして用いられる強磁性薄膜に 近い抵抗温度係数を有する材料を用いることが望ましい。さらに、非磁性抵抗体 Tは実施例のようなストライプ形状に設けることにより、設計時の抵抗調整を容 易に行うことができる。As the non-magnetic resistor T, it is desirable to use a material having a resistance temperature coefficient close to that of a ferromagnetic thin film used as a magneto-sensitive stripe as much as possible. Furthermore, by providing the nonmagnetic resistor T in the stripe shape as in the embodiment, the resistance can be easily adjusted at the time of design.

【0014】 図2は本考案の第2の実施例を示すもので、非磁性抵抗体Tを第2の感磁スト ライプS2と平行に配置して、中断端子T4を介して第2の感磁ストライプS2 に直列に接続した例を示すものである。本実施例によっても非磁性抵抗体Tの配 置方向が異なるだけで、第1の実施例と同様な等価回路となるので、同様な効果 を得ることができる。すなわち、非磁性抵抗体Tは磁気によって抵抗が変化しな いので、その配置方向には関係なく出力端子T3から得られる中点電位の値を電 源電圧の1/2以外の値となるように調整するように作用する。FIG. 2 shows a second embodiment of the present invention, in which a non-magnetic resistor T is arranged in parallel with a second magnetically sensitive strip S2, and a second magnetic field is applied via an interruption terminal T4. It shows an example in which the magnetic stripes S2 are connected in series. Also in this embodiment, only the arrangement direction of the non-magnetic resistor T is different, and an equivalent circuit similar to that of the first embodiment is obtained, so that similar effects can be obtained. That is, since the resistance of the non-magnetic resistor T does not change due to magnetism, the value of the midpoint potential obtained from the output terminal T3 is set to a value other than 1/2 of the power supply voltage, regardless of the arrangement direction. Acts to adjust to.

【0015】 同様にして、各実施例には示していないが、非磁性抵抗体Tを第1の感磁スト ライプS1に直列に接続するようにしても目的を達成することができる。Similarly, although not shown in the respective embodiments, the object can be achieved by connecting the non-magnetic resistor T in series with the first magnetically sensitive strip S1.

【0016】[0016]

【考案の効果】[Effect of device]

以上述べたように本考案によれば、各々強磁性薄膜からなる第1及び第2の感 磁ストライプのいずれか一方に非磁性抵抗体を直列に接続するようにしたので、 この接続点から出力電圧として得る中点電位を出力波形を歪ませることなく調整 することができる。 As described above, according to the present invention, the nonmagnetic resistor is connected in series to either one of the first and second magnetic stripes, each of which is made of a ferromagnetic thin film. The midpoint potential obtained as a voltage can be adjusted without distorting the output waveform.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の磁気抵抗素子の第1の実施例を示す構
成図である。
FIG. 1 is a configuration diagram showing a first embodiment of a magnetoresistive element of the present invention.

【図2】本考案の磁気抵抗素子の第2の実施例を示す構
成図である。
FIG. 2 is a configuration diagram showing a second embodiment of the magnetoresistive element of the present invention.

【図3】本考案の各実施例の磁気抵抗素子の等価回路で
ある。
FIG. 3 is an equivalent circuit of the magnetoresistive element according to each embodiment of the present invention.

【図4】従来の磁気抵抗素子を示す構成図である。FIG. 4 is a configuration diagram showing a conventional magnetoresistive element.

【図5】従来の磁気抵抗素子の等価回路である。FIG. 5 is an equivalent circuit of a conventional magnetoresistive element.

【符号の説明】[Explanation of symbols]

S1 第1の感磁ストライプ S2 第2の感磁ストライプ T1 電源端子 T2 接地端子 T3 出力端子 T4 中継端子 T 非磁性抵抗体 M 磁界領域 S1 First magnetic sensitive stripe S2 Second magnetic sensitive stripe T1 Power supply terminal T2 Ground terminal T3 Output terminal T4 Relay terminal T Non-magnetic resistor M Magnetic field area

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 各々強磁性薄膜からなる第1の感磁スト
ライプと第2の感磁ストライプとが直列に接続され、こ
の接続点から中点電位を出力電圧として得る磁気抵抗素
子であって、前記第1又は第2の感磁ストライプの一方
に非磁性抵抗体を直列に接続して前記出力電圧となる中
点電位の値を調整したことを特徴とする磁気抵抗素子。
1. A magnetoresistive element in which a first magnetic sensitive stripe and a second magnetic sensitive stripe each made of a ferromagnetic thin film are connected in series, and a midpoint potential is obtained as an output voltage from this connection point, A magnetoresistive element comprising a nonmagnetic resistor connected in series to one of the first or second magnetosensitive stripes to adjust the value of the midpoint potential which is the output voltage.
JP047879U 1992-06-17 1992-06-17 Magnetoresistive element Withdrawn JPH062116U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP047879U JPH062116U (en) 1992-06-17 1992-06-17 Magnetoresistive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP047879U JPH062116U (en) 1992-06-17 1992-06-17 Magnetoresistive element

Publications (1)

Publication Number Publication Date
JPH062116U true JPH062116U (en) 1994-01-14

Family

ID=12787675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP047879U Withdrawn JPH062116U (en) 1992-06-17 1992-06-17 Magnetoresistive element

Country Status (1)

Country Link
JP (1) JPH062116U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150725A1 (en) * 2009-06-24 2010-12-29 アルプス電気株式会社 Magnetic detection device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150725A1 (en) * 2009-06-24 2010-12-29 アルプス電気株式会社 Magnetic detection device
JP5066628B2 (en) * 2009-06-24 2012-11-07 アルプス電気株式会社 Magnetic detector

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