JPH062140A - Device for coating inside wall of furnace core pipe - Google Patents
Device for coating inside wall of furnace core pipeInfo
- Publication number
- JPH062140A JPH062140A JP16517992A JP16517992A JPH062140A JP H062140 A JPH062140 A JP H062140A JP 16517992 A JP16517992 A JP 16517992A JP 16517992 A JP16517992 A JP 16517992A JP H062140 A JPH062140 A JP H062140A
- Authority
- JP
- Japan
- Prior art keywords
- furnace core
- silicon
- core pipe
- gas
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011248 coating agent Substances 0.000 title claims description 8
- 238000000576 coating method Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims abstract description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 238000010000 carbonizing Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 239000012495 reaction gas Substances 0.000 claims abstract 2
- 239000012535 impurity Substances 0.000 abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は炉芯管内壁コーティング
装置に関し、特にプラズマ反応を用い低温，低圧化でケ
イ素を炭化し、高純度の炭化ケイ素を炉芯管内壁にコー
ティングする装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a furnace core tube inner wall coating apparatus, and more particularly to a furnace core tube inner wall coating apparatus that carbonizes silicon at a low temperature and low pressure by using a plasma reaction and coats the furnace core tube inner wall with high purity silicon carbide.
【０００２】[0002]
【従来の技術】従来、炭化ケイ素炉芯管の製造は、コー
クスとケイ砂とを電気炉中で１８００〜１９００℃の高
温下に置くことによって下記反応が進行し、炭化ケイ素
が合成される。2. Description of the Related Art Conventionally, in the manufacture of a silicon carbide furnace core tube, the following reaction proceeds by placing coke and silica sand at a high temperature of 1800 to 1900 ° C. in an electric furnace to synthesize silicon carbide.
【０００３】Ｃ＋Ｓｉ→ＳｉＣ（炭化ケイ素） 合成された炭化ケイ素は、次に所定の形状に加工する為
に粉末状に粉砕される。この粉砕工程において重金属不
純物が混入する。そして、炭化ケイ素の粉末を高温高圧
下で所定の形状に加工した炭化ケイ素炉芯管を半導体製
造工程に使用していた。C + Si → SiC (Silicon Carbide) The synthesized silicon carbide is then pulverized into powder for processing into a predetermined shape. Heavy metal impurities are mixed in this crushing process. Then, a silicon carbide furnace core tube obtained by processing silicon carbide powder into a predetermined shape under high temperature and high pressure has been used in a semiconductor manufacturing process.
【０００４】[0004]
【発明が解決しようとする課題】上述した従来の炉芯管
製造に用いる炭化ケイ素製造装置は、高温での炭化ケイ
素合成さらには高温高圧下での成形加工であり、炭化ケ
イ素の原料となるコークス並びにケイ砂の純度に関わら
ず、外部要因からの重金属不純物の浸入により、高純度
の炭化ケイ素の合成が難しいという欠点を有していた。The above-described conventional apparatus for producing silicon carbide used for producing a furnace core tube is a process for synthesizing silicon carbide at high temperature and further for forming under high temperature and high pressure, and is a coke which is a raw material of silicon carbide. In addition, regardless of the purity of silica sand, there is a drawback that it is difficult to synthesize high-purity silicon carbide due to infiltration of heavy metal impurities from external factors.
【０００５】本発明の目的は、前記課題を解決する為に
ケイ素から成る炉芯管内壁に炭化ケイ素をコーティング
する装置を提供する事にある。An object of the present invention is to provide an apparatus for coating the inner wall of a furnace core tube made of silicon with silicon carbide in order to solve the above problems.
【０００６】[0006]
【課題を解決するための手段】本発明に係る炉芯管内壁
コーティング装置は、ＣＨ4 −Ｈ2 系プラズマ用のガス
を供給するガス供給機構部と、このガス供給機構部から
のガスをケイ素炉芯管にてプラズマ化し、そのプラズマ
反応による前記ケイ素炉芯管の内壁へのスパッタリング
により、ケイ素を炭化させて炭化ケイ素炉芯管を形成さ
せるプラズマ反応機後部とを有するものである。A furnace core tube inner wall coating apparatus according to the present invention includes a gas supply mechanism section for supplying a gas for CH 4 —H 2 system plasma, and a gas supplied from this gas supply mechanism section to silicon. And a plasma reactor rear part for carbonizing silicon to form a silicon carbide furnace core tube by forming plasma in the furnace core tube and performing sputtering on the inner wall of the silicon furnace core tube by the plasma reaction.
【０００７】[0007]
【実施例】次に本発明について図面を参照して説明す
る。The present invention will be described below with reference to the drawings.
【０００８】図１は本発明の炉芯管内壁コーティング装
置の一実施例を示す構成図である。FIG. 1 is a block diagram showing an embodiment of a furnace core tube inner wall coating apparatus of the present invention.
【０００９】本実施例に係る炉芯管内壁コーティング装
置は、ＣＨ4 ガス源１及びＨ2 ガス源２を備えたガス供
給機構部Ａと、ガスラインフィルタ４及びマスフローコ
ントローラ５並びに圧力計６を備えガス供給機構部Ａか
らのガス流量を制御する制御部Ｂと、電力計１１及び高
周波発振器１０並びに誘導コイル９を備えたプラズマ反
応機構部Ｃと、液体窒素トラップ１２及び真空ポンプ１
３を備えた排気部Ｄとから構成されている。３はニード
ルバルブ，７はストップバルブである。The furnace core tube inner wall coating apparatus according to this embodiment includes a gas supply mechanism section A having a CH 4 gas source 1 and an H 2 gas source 2, a gas line filter 4, a mass flow controller 5 and a pressure gauge 6. A control unit B for controlling the gas flow rate from the gas supply mechanism unit A provided, a plasma reaction mechanism unit C provided with a power meter 11, a high-frequency oscillator 10, and an induction coil 9, a liquid nitrogen trap 12, and a vacuum pump 1.
3 and an exhaust portion D provided with 3. 3 is a needle valve, and 7 is a stop valve.
【００１０】本実施例においては、反応に際して反応系
内を１０-5〜１０-6Ｔｏｒｒ前後まで液体窒素トラップ
１３を通して排気し、反応ガスとしてのＣＨ4 ガス，Ｈ
2 ガスをガス源１，２よりマスフローコントローラ５を
通し所定の流量にてプラズマ反応機構部Ｃにある加工済
のケイ素炉芯管８へ導入する。ガス混合比は、グラファ
イト及びカーボンの析出を抑える為にＣＨ4 ガスは５Ｖ
ｏｌ％以下とする。ガス圧力は圧力計６にて所定の圧力
に設定する。電力は周波数１３．５６ＭＨｚ，出力２０
０Ｗの高周波発振器１０より誘導結合方式により移送す
る。放電によって生成された炭素イオンによるケイ素炉
芯管８の内壁へのスパッタリングによりケイ素が炭化
し、炭化ケイ素炉芯管が合成される。反応の際に用いら
れるＨ2 ガスは、ケイ素の炭化においての反応促進剤
（触媒）となる。In this embodiment, during the reaction, the inside of the reaction system was evacuated to around 10 -5 to 10 -6 Torr through the liquid nitrogen trap 13, and CH 4 gas and H as reaction gases were used.
2 Gases are introduced from the gas sources 1 and 2 through the mass flow controller 5 into the processed silicon furnace core tube 8 in the plasma reaction mechanism C at a predetermined flow rate. The gas mixing ratio is 5 V for CH 4 gas to suppress the precipitation of graphite and carbon.
ol% or less. The gas pressure is set to a predetermined pressure by the pressure gauge 6. Electric power frequency 13.56MHz, output 20
It is transferred from the 0 W high frequency oscillator 10 by the inductive coupling method. The carbon ions generated by the discharge sputter on the inner wall of the silicon furnace core tube 8 to carbonize silicon to synthesize the silicon carbide core tube. The H 2 gas used during the reaction serves as a reaction promoter (catalyst) in the carbonization of silicon.
【００１１】[0011]
【発明の効果】以上説明したように本発明は、プラズマ
反応を用いる事によりケイ素を低温低圧下で炭化する事
ができ、外部からの不純物混入及び不純物の熱拡散を最
小限に抑え、高純度の炭化ケイ素炉芯管を製造できる効
果がある。従来技術による炭化ケイ素製造装置にて得た
炭化ケイ素中の重金属不純物濃度は１０12ａｔｏｍｓ／
ｃｍ2 であるのに対し、本発明により得た炭化ケイ素中
の重金属不純物濃度は、１０9 ａｔｏｍｓ／ｃｍ2 程度
と分析技術における検出限界値となっている。As described above, according to the present invention, it is possible to carbonize silicon at a low temperature and a low pressure by using a plasma reaction, to minimize the contamination of impurities from the outside and the thermal diffusion of impurities, and to obtain a high purity. There is an effect that the silicon carbide furnace core tube can be manufactured. The concentration of heavy metal impurities in silicon carbide obtained by a conventional silicon carbide manufacturing apparatus is 10 12 atoms /
In contrast to cm 2 , the concentration of heavy metal impurities in the silicon carbide obtained according to the present invention is about 10 9 atoms / cm 2, which is a detection limit value in analytical techniques.
【図１】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
１ ＣＨ4 ガス源 ２ Ｈ2 ガス源 ３ ニードルバルブ ４ ガスラインフィルタ ５ マスフローコントローラ ６ 圧力計 ７ ストップバルブ ８ ケイ素炉芯管 ９ 誘導コイル １０ 高周波発振器 １１ 電力計 １２ 液体窒素トラップ １３ 真空ポンプ1 CH 4 Gas Source 2 H 2 Gas Source 3 Needle Valve 4 Gas Line Filter 5 Mass Flow Controller 6 Pressure Gauge 7 Stop Valve 8 Silicon Furnace Core Tube 9 Induction Coil 10 High Frequency Oscillator 11 Power Meter 12 Liquid Nitrogen Trap 13 Vacuum Pump
Claims (1)
このガス供給機構部からのガスをケイ素炉芯管内にてイ
オン化し、そのプラズマ反応による前記ケイ素炉芯管内
壁へのスパッタリングによりケイ素を炭化させて炭化ケ
イ素炉芯管を形成させるプラズマ反応機構部とを有する
ことを特徴とする炉芯管内壁コーティング装置。1. A gas supply mechanism section for supplying a reaction gas,
A plasma reaction mechanism portion for ionizing the gas from this gas supply mechanism portion in the silicon furnace core tube and carbonizing silicon by sputtering on the inner wall of the silicon furnace core tube by the plasma reaction to form a silicon carbide furnace core tube. A furnace core tube inner wall coating apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16517992A JPH062140A (en) | 1992-06-24 | 1992-06-24 | Device for coating inside wall of furnace core pipe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16517992A JPH062140A (en) | 1992-06-24 | 1992-06-24 | Device for coating inside wall of furnace core pipe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH062140A true JPH062140A (en) | 1994-01-11 |
Family
ID=15807354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16517992A Pending JPH062140A (en) | 1992-06-24 | 1992-06-24 | Device for coating inside wall of furnace core pipe |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062140A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02279598A (en) * | 1989-04-18 | 1990-11-15 | Nec Corp | Furnace core tube |
-
1992
- 1992-06-24 JP JP16517992A patent/JPH062140A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02279598A (en) * | 1989-04-18 | 1990-11-15 | Nec Corp | Furnace core tube |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980616 |