JPH06215896A - Manufacture of ion accelerating electrode plate - Google Patents
Manufacture of ion accelerating electrode plateInfo
- Publication number
- JPH06215896A JPH06215896A JP453093A JP453093A JPH06215896A JP H06215896 A JPH06215896 A JP H06215896A JP 453093 A JP453093 A JP 453093A JP 453093 A JP453093 A JP 453093A JP H06215896 A JPH06215896 A JP H06215896A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic coating
- flat plate
- electrode plate
- coating layer
- titanium nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Particle Accelerators (AREA)
Abstract
(57)【要約】
【目的】 イオン加速電極板の製造において耐食性に優
れたセラミックス被覆層を容易に得られるようにするこ
と。
【構成】 溝付平板11の一面に多数の溝10を設け、その
一面全域に窒化チタン(TiN)を蒸着させてそこにセ
ラミックス被覆層12を形成する。平板13の一面にも窒化
チタンを蒸着させてそこにセラミックス被覆層14を形成
する。次に、セラミックス被覆層12,14同士を密着させ
て平板11,13を拡散接合し、一体化する。
(57) [Summary] [Objective] To easily obtain a ceramic coating layer having excellent corrosion resistance in the production of an ion acceleration electrode plate. [Structure] A large number of grooves 10 are provided on one surface of a grooved flat plate 11, and titanium nitride (TiN) is vapor-deposited on the entire surface of the surface to form a ceramic coating layer 12 thereon. Titanium nitride is also vapor-deposited on one surface of the flat plate 13 to form a ceramic coating layer 14 thereon. Next, the ceramic coating layers 12 and 14 are brought into close contact with each other and the flat plates 11 and 13 are diffusion-bonded and integrated.
Description
【0001】[0001]
【産業上の利用分野】本発明は核融合装置の中性子入射
装置や能動粒子線入射装置等に適用されるイオン加速電
極板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an ion accelerating electrode plate applied to a neutron injector, an active particle beam injector, etc. of a nuclear fusion device.
【0002】[0002]
【従来の技術】核融合装置には真空容器内のプラズマに
高エネルギーの中性子ビームを外部から入射する中性粒
子入射装置やプラズマ中心部の温度測定を行う能動粒子
線入射装置等が設けられる。2. Description of the Related Art A nuclear fusion device is provided with a neutral particle injection device for injecting a high-energy neutron beam into plasma in a vacuum vessel from the outside, an active particle beam injection device for measuring the temperature of the center of plasma, and the like.
【0003】中性粒子入射装置は水素ガス中でのアーク
の放電によってプラズマを生成するイオン源と高電圧が
印加されてプラズマ中のイオンを加速するイオン加速電
極板を有している。そして、イオン加速電極板におい
て、水素イオンビームが電子を付着され、中性化されて
入射ビームとなるものである。The neutral particle injector has an ion source for generating plasma by arc discharge in hydrogen gas and an ion accelerating electrode plate for applying high voltage to accelerate ions in the plasma. Then, in the ion accelerating electrode plate, electrons are attached to the hydrogen ion beam to be neutralized and become an incident beam.
【0004】イオンビーム加速電極板は図3に示すよう
に、高融点金属であるモリブデン板を主体として構成さ
れる。溝付平板1と直交する方向に沿ってビーム孔2が
多数穿設され、この溝は平板1の平面に沿う方向に冷却
水通路となる冷却孔3が穿たれる。As shown in FIG. 3, the ion beam accelerating electrode plate is mainly composed of a molybdenum plate which is a refractory metal. A large number of beam holes 2 are bored along a direction orthogonal to the grooved flat plate 1, and in this groove, cooling holes 3 serving as cooling water passages are bored in a direction along the plane of the flat plate 1.
【0005】冷却孔3は、例えば、図4に示すようにモ
リブデン製の溝付平板1の溝形成面に同じく、モリブデ
ン製の平板4を拡散接合によって接合することにより形
成されている。なお、能動粒子線入射装置に用いられる
イオン加速電極板の構成も前記のものと同様に構成され
ている。The cooling hole 3 is formed, for example, by joining a molybdenum flat plate 4 to the groove forming surface of the molybdenum flat plate 1 by diffusion bonding, as shown in FIG. The structure of the ion accelerating electrode plate used in the active particle beam injector is the same as that described above.
【0006】しかしながら、モリブデン材料は酸化され
易く湿気を帯びた大気中や酸素を含む冷却水中に放置さ
れた場合、酸化腐食が進行し平板1を貫くような孔食が
発生する虞れがある。この問題に対処するために、近
年、冷却孔3の各面にセラミックス被覆層5を形成する
などの対策が講じられてきている。However, when the molybdenum material is easily oxidized and left in the humid atmosphere or the cooling water containing oxygen, there is a possibility that oxidative corrosion progresses to cause pitting corrosion that penetrates the flat plate 1. In order to deal with this problem, measures such as forming a ceramic coating layer 5 on each surface of the cooling hole 3 have been taken in recent years.
【0007】[0007]
【発明が解決しようとする課題】上記のセラミックス被
覆層5は溝付平板1と平板4とを拡散接合する前に蒸着
させるのが一般的であるが、例えばセラミックスとして
アルミナを用いると、拡散接合の接合温度がモリブデン
の再結晶温度以上となってしまうため、セラミックス被
覆層5の形成後に除去加工が必要となってくる。The above-mentioned ceramic coating layer 5 is generally vapor-deposited before the grooved flat plate 1 and the flat plate 4 are diffusion-bonded. For example, when alumina is used as the ceramics, the diffusion-bonding is performed. Since the joining temperature of is higher than the recrystallization temperature of molybdenum, the removal processing is required after the ceramic coating layer 5 is formed.
【0008】再結晶温度以下で拡散結合が可能なセラミ
ックスとしては、例えば、炭化チタン(TiC)がある
が、接合時モリブデンと炭素が反応し、脆化層を形成す
る虞れがあり、適用上困難が多い。本発明の目的は、耐
食性に優れたセラミックス被覆層を容易に得ることがで
きるイオン加速電極板の製造方法を提供することにあ
る。Titanium carbide (TiC) is an example of ceramics that can be diffusion-bonded at a temperature lower than the recrystallization temperature. However, molybdenum reacts with carbon at the time of bonding to form a brittle layer. There are many difficulties. An object of the present invention is to provide a method for manufacturing an ion acceleration electrode plate, which can easily obtain a ceramic coating layer having excellent corrosion resistance.
【0009】[0009]
【課題を解決するための手段】上記目的を達成するため
に本発明はモリブデンからなる溝付平板の溝形成面にセ
ラミックス被覆層となる窒化チタンを蒸着し、モリブデ
ンからなる平板の一面にセラミックス被覆層となる窒化
チタンを蒸着し、次に双方のセラミックス被覆層同士を
密着させるように重ね合わせて溝付平板と平板とを拡散
接合し、この後一体化した電極板の一面から交差する方
向に多数のビーム孔を穿つことを特徴とするものであ
る。In order to achieve the above object, the present invention is to deposit titanium nitride as a ceramic coating layer on the groove forming surface of a grooved flat plate made of molybdenum, and coat one surface of the flat plate made of molybdenum with ceramics. A layer of titanium nitride is vapor-deposited, and then both of the ceramic coating layers are superposed so as to be in close contact with each other, and the grooved flat plate and the flat plate are diffusion-bonded, and then in a direction intersecting from one surface of the integrated electrode plate. It is characterized in that a large number of beam holes are formed.
【0010】[0010]
【作用】本発明によれば、セラミックス被覆層は、たと
えば窒化チタンを用いることにより、モリブデンの再結
晶温度以下での拡散接合が可能であり、セラミックス被
覆層形成後の除去加工を省略することができる。また接
合の際、脆化層が生成されず、冷却孔の高い気密性を保
持することができる。According to the present invention, the ceramic coating layer can be diffusion-bonded below the recrystallization temperature of molybdenum by using, for example, titanium nitride, and the removal process after the ceramic coating layer is formed can be omitted. it can. Further, at the time of joining, the embrittlement layer is not generated, and the high airtightness of the cooling hole can be maintained.
【0011】[0011]
【実施例】以下、本発明の実施例を図1および図2を参
照して説明する。Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
【0012】図1(a)において、溝付平板11の面に多
数の溝10を設けてその一面全域に窒化チタン(TiN)
を蒸着させてセラミックス被覆層12を形成する。また、
平板13の一面に窒化チタンを蒸着させてセラミックス被
覆層14を形成する。次に、図1(b)に示すように、双
方のセラミックス被覆層12,14同士を密着させるように
溝付平板11と平板13とを重ね合わせ、モリブデンの再結
晶温度以下の温度を保って拡散接合する。このとき、溝
10の開放部が塞がれて冷却孔15が形成される。拡散接合
はホットプレス装置を用いて、処理温度1000℃保持時間
3Hr面圧 1.8kgf/mm2 、真空度1×10-4Torrの条件
で行う。次に、図2に示すように一体化した電極板の一
面から交差する方向に多数のビーム孔16を穿つ。ちなみ
にビーム孔16は全部で 450個あり、直径は70mmである。
なお、本実施例のセラミックス被覆層窒化チタンを用い
化学的蒸着法によって形成するが、厚さは10μmが望ま
しい。In FIG. 1A, a large number of grooves 10 are provided on the surface of a grooved flat plate 11, and titanium nitride (TiN) is formed on the entire surface of the groove 10.
Is deposited to form the ceramic coating layer 12. Also,
Titanium nitride is deposited on one surface of the flat plate 13 to form a ceramic coating layer 14. Next, as shown in FIG. 1 (b), the grooved flat plate 11 and the flat plate 13 are overlapped so that the two ceramic coating layers 12 and 14 are brought into close contact with each other, and the temperature below the recrystallization temperature of molybdenum is maintained. Diffusion bonding. At this time, the groove
The open portion of 10 is closed to form the cooling hole 15. Diffusion bonding was performed using a hot press machine at a processing temperature of 1000 ° C for a holding time of 3 hours and a surface pressure of 1.8 kgf / mm 2 , The degree of vacuum is 1 × 10 −4 Torr. Next, as shown in FIG. 2, a large number of beam holes 16 are formed in a direction intersecting with one surface of the integrated electrode plate. Incidentally, there are 450 beam holes 16 in all, and the diameter is 70 mm.
The ceramic coating layer titanium nitride of the present embodiment is formed by a chemical vapor deposition method, and the thickness is preferably 10 μm.
【0013】このように本実施例においては、厚さが均
一なセラミックス被覆層12,14を有する冷却孔15を形成
することができ、耐食性の優れたイオン加速電極板を得
ることが可能である。As described above, in this embodiment, it is possible to form the cooling hole 15 having the ceramic coating layers 12 and 14 having a uniform thickness, and it is possible to obtain an ion acceleration electrode plate having excellent corrosion resistance. .
【0014】[0014]
【発明の効果】以上述べたように本発明のイオン加速電
極板の製造方法によれば、セラミックス被覆層の材料に
窒化チタンを用いているので、優れた耐食性を付与する
ことができ、しかもインサート材としての働きを持たせ
ることが可能である。As described above, according to the method of manufacturing an ion accelerating electrode plate of the present invention, since titanium nitride is used as the material of the ceramic coating layer, excellent corrosion resistance can be imparted and the insert can be used. It is possible to have a function as a material.
【図1】本発明によるイオン加速電極板の製造工程を示
す説明図FIG. 1 is an explanatory view showing a manufacturing process of an ion acceleration electrode plate according to the present invention.
【図2】図1のイオン加速電極板の最終工程を示す説明
図FIG. 2 is an explanatory view showing a final step of the ion acceleration electrode plate of FIG.
【図3】従来のイオン加速電極板を示す平面図FIG. 3 is a plan view showing a conventional ion acceleration electrode plate.
【図4】従来のイオン加速電極板の断面図FIG. 4 is a sectional view of a conventional ion acceleration electrode plate.
10 溝 11 溝付平板 12,14 セラミックス被覆層 13 平板 15 冷却孔 16 ビーム孔 10 groove 11 flat plate with groove 12, 14 ceramic coating 13 flat plate 15 cooling hole 16 beam hole
Claims (1)
にセラミックス被覆層となる窒化チタンを蒸着し、モリ
ブデンからなる平板の一面にセラミックス被覆層となる
窒化チタンを蒸着し、次に前記双方のセラミックス被覆
層同士を密着させるように重ね合わせて該溝付平板と平
板とを拡散接合し、この後一体化した電極板の一面から
交差する方向に多数のビーム孔を穿つことを特徴とする
イオン加速電極板の製造方法。1. A titanium nitride forming a ceramic coating layer is vapor-deposited on a groove forming surface of a grooved flat plate made of molybdenum, and titanium nitride forming a ceramic coating layer is vapor-deposited on one surface of a flat plate made of molybdenum. Ions characterized by stacking the ceramic coating layers so as to be in close contact with each other and diffusion-bonding the grooved flat plate and the flat plate, and then forming a large number of beam holes in a direction intersecting with one surface of the integrated electrode plate. Method for manufacturing accelerating electrode plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP453093A JPH06215896A (en) | 1993-01-14 | 1993-01-14 | Manufacture of ion accelerating electrode plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP453093A JPH06215896A (en) | 1993-01-14 | 1993-01-14 | Manufacture of ion accelerating electrode plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06215896A true JPH06215896A (en) | 1994-08-05 |
Family
ID=11586605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP453093A Pending JPH06215896A (en) | 1993-01-14 | 1993-01-14 | Manufacture of ion accelerating electrode plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06215896A (en) |
-
1993
- 1993-01-14 JP JP453093A patent/JPH06215896A/en active Pending
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