JPH06249582A - Atmosphere controlling heat treatment device and heat treatment method - Google Patents

Atmosphere controlling heat treatment device and heat treatment method

Info

Publication number
JPH06249582A
JPH06249582A JP5036849A JP3684993A JPH06249582A JP H06249582 A JPH06249582 A JP H06249582A JP 5036849 A JP5036849 A JP 5036849A JP 3684993 A JP3684993 A JP 3684993A JP H06249582 A JPH06249582 A JP H06249582A
Authority
JP
Japan
Prior art keywords
heat treatment
atmosphere
chamber
atmosphere control
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5036849A
Other languages
Japanese (ja)
Other versions
JP2651101B2 (en
Inventor
Akira Takahashi
章 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP5036849A priority Critical patent/JP2651101B2/en
Publication of JPH06249582A publication Critical patent/JPH06249582A/en
Application granted granted Critical
Publication of JP2651101B2 publication Critical patent/JP2651101B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0072—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Furnace Details (AREA)

Abstract

PURPOSE:To provide an atmosphere controlling heat treatment device and a heat treatment method in which atmosphere for heat treating ceramics material can be actively and precisely controlled and a physical characteristic such as strength of produced ceramic materials can be improved. CONSTITUTION:A firing device 1 is constructed such that a shell 20 and a carbon heater 12 enclosing the shell 20 are arranged within a main body 10 of the firing device. Within the main body 10 of the device are arranged a furnace gas feeding pipe 14 and a furnace gas discharging pipe 16. An atmosphere control chamber 30 defines an inside part of the shell 20 below the shell 20 and is formed. The atmosphere control chamber 30 is filled with atmosphere control material 32.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、セラミックス材の熱処
理装置及び熱処理方法に関し、更に詳細には、熱処理室
の雰囲気を制御したセラミックス材の熱処理装置及び熱
処理方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method for a ceramic material, and more particularly to a heat treatment apparatus and a heat treatment method for a ceramic material in which the atmosphere of a heat treatment chamber is controlled.

【0002】[0002]

【従来の技術】従来のセラミックス材の熱処理、特にセ
ラミックス成形体の焼成においては、成形体を配置する
サヤ内の雰囲気は、焼成過程で該成形体から発生するガ
スやサヤ内に存在する雰囲気ガス等を考慮し、成形体の
重量、雰囲気ガス圧等をサヤの内容積との関連で適宜変
更することにより制御されていた。ここで、「セラミッ
クス材」とは、セラミックス材料、セラミックスの成形
体、仮焼体及び焼結体等をいうものとする。
2. Description of the Related Art In the conventional heat treatment of ceramic materials, particularly firing of a ceramic molded body, the atmosphere inside the sheath in which the molded body is placed is the gas generated from the molded body during the firing process or the atmospheric gas existing in the sheath. In consideration of the above, it was controlled by appropriately changing the weight of the molded product, the atmospheric gas pressure and the like in relation to the inner volume of the sheath. Here, the "ceramics material" refers to ceramics materials, ceramics compacts, calcined bodies, sintered bodies, and the like.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上述の
ような受動的な制御方法では、雰囲気ガスを制御するに
は、成形体等の重量を変化させるしかなく、1回の焼成
工程で処理する成形体の重量や形状等に制約が多くなる
のみならず、雰囲気ガスを精密に制御することができな
いという課題があった。
However, in the passive control method as described above, in order to control the atmospheric gas, there is no choice but to change the weight of the molded body or the like, and the molding process is performed in one firing step. There is a problem that not only the weight and shape of the body are restricted but also the atmospheric gas cannot be precisely controlled.

【0004】また、特開平4−275978号公報に
は、窒化珪素粉末からシリカ被膜を除去し、これに続い
て焼結を行い、シリカ分を低減した窒化珪素焼結体を得
るためのシリカ除去処理/焼結兼用炉が開示されてい
る。しかし、この炉にN2ガス等の非酸化性ガスを導入
するのは、シリカ分をガスの形態で飛散させ除去するた
めであり、熱処理(特に焼結)に直接使用する雰囲気を
積極的に作成するものではない。
Further, in JP-A-4-275978, a silica coating is removed from a silicon nitride powder, followed by sintering to remove silica for obtaining a silicon nitride sintered body having a reduced silica content. A combined processing / sintering furnace is disclosed. However, the non-oxidizing gas such as N 2 gas is introduced into this furnace in order to scatter and remove the silica component in the form of gas, and the atmosphere used directly for heat treatment (particularly sintering) is positively activated. Not meant to be created.

【0005】本発明は、このような従来技術の有する課
題に鑑みてなされたものであり、その目的とするところ
は、セラミックス材を熱処理する雰囲気を能動的且つ精
密に制御でき、得られるセラミックス材の強度等の物性
を向上できる雰囲気制御熱処理装置及び熱処理方法を提
供することにある。
The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to enable active and precise control of the atmosphere for heat-treating a ceramic material, and obtain the resulting ceramic material. An object of the present invention is to provide an atmosphere control heat treatment apparatus and a heat treatment method capable of improving the physical properties such as the strength.

【0006】[0006]

【課題を解決するための手段】本発明者は、上記目的を
達成すべく鋭意研究した結果、特定の雰囲気制御室を設
けることにより、上記目的が達成できることを見出し、
本発明を完成するに至った。従って、本発明の熱処理装
置は、熱処理装置本体内に、被熱処理体を配置する熱処
理室を配設して成るセラミックス材用の熱処理装置であ
って、該熱処理室の近傍に、雰囲気制御材料を充填した
雰囲気制御室を備え、この雰囲気制御室と上記熱処理室
とが通気性を有する状態で連結されて成ることを特徴と
する。また、本発明の熱処理方法は、セラミックス材を
熱処理するに当たり、被熱処理体を配置する熱処理室内
の雰囲気を能動的に制御しながら熱処理することを特徴
とする。
Means for Solving the Problems As a result of intensive research to achieve the above object, the present inventor has found that the above object can be achieved by providing a specific atmosphere control chamber,
The present invention has been completed. Therefore, the heat treatment apparatus of the present invention is a heat treatment apparatus for a ceramic material in which a heat treatment chamber for arranging an object to be heat treated is provided in the heat treatment apparatus body, and an atmosphere control material is provided in the vicinity of the heat treatment chamber. It is characterized in that a filled atmosphere control chamber is provided, and the atmosphere control chamber and the heat treatment chamber are connected to each other in a breathable state. Further, the heat treatment method of the present invention is characterized in that when heat-treating the ceramic material, the heat treatment is carried out while actively controlling the atmosphere in the heat treatment chamber in which the object to be heat treated is placed.

【0007】[0007]

【作用】本発明の雰囲気制御熱処理装置においては、被
熱処理体を配置する熱処理室の近傍に、雰囲気制御室を
設けた。また、この制御室には、雰囲気制御ガスを発生
する雰囲気制御材料を充填することにした。更に、この
制御室と上記熱処理室を通気性を有するように連結し
た。従って、被熱処理体の熱処理に際し、所要に応じ
て、雰囲気制御ガスを熱処理室に導入することができ、
雰囲気ガスを精密且つ能動的に制御することができる。
よって、被熱処理体の形状、材質等に応じて適宜雰囲気
の種類及び分圧等を制御でき、好適な物性を有するセラ
ミックス材を得ることができる。
In the atmosphere controlled heat treatment apparatus of the present invention, the atmosphere control chamber is provided near the heat treatment chamber in which the object to be heat treated is placed. The control chamber is filled with an atmosphere control material that generates an atmosphere control gas. Further, the control chamber and the heat treatment chamber were connected so as to have air permeability. Therefore, in the heat treatment of the object to be heat treated, the atmosphere control gas can be introduced into the heat treatment chamber, if necessary,
The atmospheric gas can be controlled precisely and actively.
Therefore, the type and partial pressure of the atmosphere can be appropriately controlled according to the shape and material of the object to be heat treated, and a ceramic material having suitable physical properties can be obtained.

【0008】以下、本発明の熱処理装置について説明す
る。本発明の熱処理装置は、熱処理装置本体内に熱処理
室を配設して成る。この装置本体及び処理室の形状は、
特に限定されるものではないが、処理室への熱伝達等を
考慮すれば、両者は相似形の関係にあるのが好ましく、
更に好ましくは、両者ともにほぼ円筒状をなし、同心円
上に配置されるのがよい。また、上記処理室の回りに
は、発熱部材、例えばヒータが配設されており、この発
熱部材から処理室に熱が伝達される。更に、上記処理室
の近傍には、雰囲気制御室が設けられており、この制御
室を介して熱処理に供する雰囲気を制御できる。
The heat treatment apparatus of the present invention will be described below. The heat treatment apparatus of the present invention comprises a heat treatment chamber provided in the main body of the heat treatment apparatus. The shape of the main body and processing chamber is
Although not particularly limited, in consideration of heat transfer to the processing chamber and the like, it is preferable that the two have a similar shape relationship,
More preferably, both of them have a substantially cylindrical shape and are arranged on concentric circles. A heat generating member, for example, a heater is arranged around the processing chamber, and heat is transferred from the heat generating member to the processing chamber. Further, an atmosphere control chamber is provided near the processing chamber, and the atmosphere used for the heat treatment can be controlled via this control chamber.

【0009】上記装置本体の材質は、特に限定されるも
のではないが、断熱性及び耐蝕性を有するのが好まし
く、カーボン、SiC、ZrO2、Si3N4等を例示で
き、被熱処理体と同一の材質であってもよい。また、上
記処理室の材質も特に限定されず、熱処理せんとするセ
ラミックス材の種類及び意図する処理等により適宜変更
できるが、焼成処理を行う場合には、カーボン、Si
C、Si3N4及び被熱処理体と同一の材質等を挙げるこ
とができる。更に、上記発熱部材も限定されるものでは
なく、熱処理に必要とされる温度等により適宜変更する
ことができ、カーボン製ヒータ、セラミックス製ヒータ
及び金属製ヒータを例示できる。
The material of the apparatus main body is not particularly limited, but it is preferable that it has heat insulation and corrosion resistance, and carbon, SiC, ZrO 2 , Si 3 N 4 and the like can be exemplified. The same material may be used. The material of the processing chamber is not particularly limited, and can be changed as appropriate depending on the type of ceramic material to be heat-treated and the intended treatment. However, when performing the firing treatment, carbon, Si
The same material as C, Si 3 N 4 and the object to be heat treated can be used. Further, the heat generating member is not limited, and can be appropriately changed depending on the temperature required for the heat treatment and the like, and examples thereof include a carbon heater, a ceramic heater, and a metal heater.

【0010】次に、上記雰囲気制御室につき説明する。
この雰囲気制御室は、上述の如く熱処理室の近傍に配設
され、この雰囲気制御室内には雰囲気制御材料が充填さ
れている。また、この雰囲気制御室と熱処理室とは、雰
囲気制御材料から生ずる雰囲気制御ガスを雰囲気制御室
から熱処理室に供給するに十分な通気性を有する状態で
連結されている。雰囲気制御室の位置は、熱処理室の近
傍であれば、特に限定されるものではないが、上記発熱
部材からの熱を受容可能とし、且つ雰囲気制御材料から
生ずる雰囲気制御ガスを熱処理室に円滑に供給すること
を考慮すれば、熱処理室の下方に近接して配置されるの
が好ましい。従って、熱処理室内の一部(特に下部)を
区画して雰囲気制御室を設けるのが更に好ましい。
Next, the atmosphere control room will be described.
This atmosphere control chamber is arranged near the heat treatment chamber as described above, and the atmosphere control chamber is filled with the atmosphere control material. Further, the atmosphere control chamber and the heat treatment chamber are connected to each other in a state having sufficient air permeability to supply the atmosphere control gas generated from the atmosphere control material from the atmosphere control chamber to the heat treatment chamber. The position of the atmosphere control chamber is not particularly limited as long as it is in the vicinity of the heat treatment chamber, but the heat from the heat generating member can be received and the atmosphere control gas generated from the atmosphere control material can be smoothly fed to the heat treatment chamber. Considering the supply, it is preferable that the heat treatment chamber is arranged in the lower part of the heat treatment chamber. Therefore, it is more preferable that the atmosphere control chamber is provided by partitioning a part (especially the lower part) of the heat treatment chamber.

【0011】雰囲気制御室に充填する雰囲気制御材料と
しては、意図する熱処理、例えば、仮焼、焼成、酸化処
理等に応じて適宜選定することができるが、焼成処理に
おいては、シリカ等の酸化物、カーボン、窒化珪素等の
窒化物やSiC等の炭化物及びBN等のホウ化物を挙げ
ることができる。また、これら材料を2種以上組み合わ
せてもよい。材料の形態としては、粉末状、塊状等のい
ずれであってもよい。なお、熱処理温度の近傍でのみガ
スとして存在する材料、例えばSiO等について、かか
る雰囲気制御室は極めて有効に作用する。ここで、熱処
理室内の雰囲気は、炉内ガスとして主に雰囲気を構成す
るN2、Ar、エアーの他に、例えばSiO2を添加した
際に生じるSiOや、カーボンと酸素が反応して生じる
COにより構成される。
The atmosphere control material to be filled in the atmosphere control chamber can be appropriately selected according to the intended heat treatment, for example, calcination, firing, oxidation treatment, etc. In the firing treatment, oxides such as silica are used. , Carbon, nitrides such as silicon nitride, carbides such as SiC, and borides such as BN. Moreover, you may combine 2 or more types of these materials. The material may be in the form of powder, lump, or the like. The atmosphere control chamber acts extremely effectively on a material existing as a gas only near the heat treatment temperature, such as SiO. Here, the atmosphere in the heat treatment chamber is, in addition to N 2 , Ar, and air that mainly constitute the atmosphere as the furnace gas, SiO generated when SiO 2 is added, or CO generated when carbon and oxygen react. It is composed of

【0012】雰囲気制御ガスを雰囲気制御室から熱処理
室に一層円滑に供給し、また、熱処理雰囲気を一層精密
に制御するには、雰囲気制御室にキャリアガス導入管を
連結してキャリアガスを導入するか、若しくは上記熱処
理室に雰囲気排出管を連結して雰囲気を排出し、又はこ
の双方を行うのがよい。更に、これらキャリアガス導入
管及び/又は雰囲気排出管に流量制御装置を設けて、キ
ャリアガスの導入量及び/又は雰囲気排出量を制御すれ
ば、熱処理雰囲気の更なる微調整が可能となる。また、
雰囲気制御室とキャリアガス導入管との間に、キャリア
ガス加熱領域、例えば渦巻型導入管等を設けてもよく、
これにより、キャリアガスと上記雰囲気制御ガスとの温
度差を低減し、雰囲気制御ガスの分圧を一層精密に制御
することが可能となる。
In order to supply the atmosphere control gas from the atmosphere control chamber to the heat treatment chamber more smoothly and to control the heat treatment atmosphere more precisely, a carrier gas introducing pipe is connected to the atmosphere control chamber to introduce the carrier gas. Alternatively, an atmosphere exhaust pipe may be connected to the heat treatment chamber to exhaust the atmosphere, or both may be performed. Further, if a flow rate control device is provided in the carrier gas introduction pipe and / or the atmosphere discharge pipe to control the introduction amount of the carrier gas and / or the atmosphere discharge amount, the heat treatment atmosphere can be further finely adjusted. Also,
Between the atmosphere control chamber and the carrier gas introduction pipe, a carrier gas heating region, for example, a spiral introduction pipe may be provided.
As a result, the temperature difference between the carrier gas and the atmosphere control gas can be reduced, and the partial pressure of the atmosphere control gas can be controlled more precisely.

【0013】次に、本発明の熱処理方法について説明す
る。本発明の熱処理方法では、被熱処理体、例えばセラ
ミックス成形体、仮焼体、焼結体を熱処理室に配置し、
この熱処理室内の雰囲気を能動的に制御しながら熱処理
を行う。即ち、熱処理室内に雰囲気制御ガスを導入し、
この雰囲気制御ガスの種類や分圧を意図する熱処理に応
じて選定することにより、熱処理室内の雰囲気を精密に
制御し、かかる熱処理を最適の条件下で行うことができ
る。本発明の熱処理方法は、特に、熱処理に際し、被熱
処理体がガスを多量に発生したり、熱処理室内の雰囲気
を酸化性ガスから還元性ガスに変化させたり、この逆に
還元性ガスから酸化性ガスに変化させることが必要な場
合等に有効である。
Next, the heat treatment method of the present invention will be described. In the heat treatment method of the present invention, the object to be heat treated, for example, a ceramic molded body, a calcined body, a sintered body is placed in the heat treatment chamber,
The heat treatment is performed while actively controlling the atmosphere in the heat treatment chamber. That is, introducing an atmosphere control gas into the heat treatment chamber,
By selecting the type and partial pressure of the atmosphere control gas according to the intended heat treatment, the atmosphere in the heat treatment chamber can be precisely controlled and the heat treatment can be performed under optimum conditions. In the heat treatment method of the present invention, in particular, during heat treatment, the heat-treated object generates a large amount of gas, the atmosphere in the heat treatment chamber is changed from an oxidizing gas to a reducing gas, and vice versa. This is effective when it is necessary to change to gas.

【0014】[0014]

【実施例】以下、本発明を図面を参照して実施例及び比
較例により説明する。図1に、本発明の熱処理装置の一
実施例を示す。同図において、本発明に係る焼成装置1
は、その装置本体10内に、熱処理室の一例であるサヤ
20、及びこのサヤ20を包囲する発熱部材の一例であ
るカーボン製ヒータ12を配設して構成されている。ま
た、装置本体10には、炉内ガス導入管14及び炉内ガ
ス排出管16が設けられている。この導入管14と排出
管16は設けなくてもよいが、適当なガスを流すことに
より、サヤ20の内外圧を均一にすることができるので
設ける方が好ましい。
EXAMPLES The present invention will be described below with reference to the drawings through examples and comparative examples. FIG. 1 shows an embodiment of the heat treatment apparatus of the present invention. In the figure, a firing apparatus 1 according to the present invention
In the apparatus main body 10, a sheath 20 which is an example of a heat treatment chamber and a carbon heater 12 which is an example of a heat generating member which surrounds the sheath 20 are arranged. Further, the apparatus body 10 is provided with an in-furnace gas introduction pipe 14 and an in-furnace gas discharge pipe 16. The introduction pipe 14 and the discharge pipe 16 do not have to be provided, but it is preferable to provide the introduction pipe 14 and the discharge pipe 16 because the inner and outer pressures of the sheath 20 can be made uniform by flowing an appropriate gas.

【0015】サヤ20の下方には、雰囲気制御室30が
サヤ20内を区画することにより形成されており、この
制御室30内には雰囲気制御材料32が充填されてい
る。雰囲気制御材料32は、焼成に際し適宜ガス化し、
通気孔34を介してサヤ20内に流入し、サヤ20内の
雰囲気を能動的且つ精密に制御することができる。これ
により、サヤ20内に配置された被焼成体22は、好適
又は最適の条件で焼成されることになり、得られる焼結
体の性能を向上させることができる。また、このように
雰囲気を制御することにより、得られる焼結体の性能を
使用目的に合致させることが可能であり、各種用途に対
し適応性のよい焼結体を簡易に得ることができる。
An atmosphere control chamber 30 is formed below the sheath 20 by partitioning the inside of the sheath 20, and an atmosphere control material 32 is filled in the control chamber 30. The atmosphere control material 32 is appropriately gasified during firing,
The atmosphere in the sheath 20 can be actively and precisely controlled by flowing into the sheath 20 through the ventilation holes 34. As a result, the body 22 to be fired arranged in the sheath 20 is fired under suitable or optimum conditions, and the performance of the obtained sintered body can be improved. Further, by controlling the atmosphere in this way, the performance of the obtained sintered body can be matched to the intended use, and a sintered body having good adaptability for various applications can be easily obtained.

【0016】上記サヤ20の上方には雰囲気排出管40
が連結されており、この排出管40には冷却器42が連
結されている。また、雰囲気制御室30の下部には、キ
ャリアガス加熱領域の一例である黒鉛製渦巻型導入管5
2が連結されており、更に、この渦巻型導入管52を介
してキャリアガス導入管50が連結されている。また、
雰囲気排出管40及びキャリアガス導入管50は、それ
ぞれ流量制御装置44及び54を備えており、それぞれ
の排出量及び導入量を制御できる構成となっている。従
って、上記雰囲気制御室30と、これら雰囲気排出管4
0及びキャリアガス導入管50等を適宜協働させること
により、サヤ20内の雰囲気(焼成雰囲気)を一層精密
に制御することができる。
An atmosphere discharge pipe 40 is provided above the sheath 20.
Are connected, and a cooler 42 is connected to the discharge pipe 40. In the lower part of the atmosphere control chamber 30, a spiral spiral lead pipe 5 made of graphite, which is an example of a carrier gas heating region, is provided.
2 are connected, and further, the carrier gas introduction pipe 50 is connected via the spiral introduction pipe 52. Also,
The atmosphere discharge pipe 40 and the carrier gas introduction pipe 50 are provided with flow rate control devices 44 and 54, respectively, so that the discharge amount and the introduction amount thereof can be controlled. Therefore, the atmosphere control chamber 30 and the atmosphere exhaust pipe 4
0, the carrier gas introducing pipe 50, and the like are appropriately cooperated, whereby the atmosphere (sintering atmosphere) in the sheath 20 can be controlled more precisely.

【0017】次に、上記焼成装置1を用いたセラミック
ス材の焼成方法の一例について説明する。まず、被焼成
体22をサヤ20内に配置し、雰囲気制御室30には被
焼成体22に対応する雰囲気制御材料32を充填する。
次に、装置本体10内において、炉内ガス導入管14及
び排出管16を介して適当なガスを流通させながら、ヒ
ータ12により加熱し、サヤ20を加熱する。
Next, an example of a method of firing a ceramic material using the firing apparatus 1 will be described. First, the body 22 to be fired is placed in the sheath 20, and the atmosphere control chamber 30 is filled with the atmosphere control material 32 corresponding to the body 22 to be fired.
Next, inside the apparatus main body 10, while the appropriate gas is being circulated through the in-furnace gas introduction pipe 14 and the exhaust pipe 16, the heater 12 is used to heat the sheath 20.

【0018】サヤ20の昇温に際し、雰囲気制御材料3
2がガス化して雰囲気制御ガスを生成する。この雰囲気
制御ガスの分圧を、キャリアガス導入管50、及び流量
制御装置54及び渦巻型導入管52を介して所定量・所
定温度のキャリアガスにより制御しながらサヤ20内に
雰囲気制御ガスを導入する。この一方で、サヤ20の上
方から排出管40、冷却器42及び流量制御装置44を
介して雰囲気ガスを制御しながら排出して、サヤ20内
の雰囲気を一層精密に制御しながら、被焼成体22の焼
成を行う。このように、サヤ20内の雰囲気を能動的且
つ精密に制御しながら焼成を行うことができるので、得
られる焼結体の性能を均一化することもできる。
At the time of raising the temperature of the sheath 20, the atmosphere control material 3
2 gasifies and produces an atmosphere control gas. The atmosphere control gas is introduced into the sheath 20 while controlling the partial pressure of the atmosphere control gas by the carrier gas introduction pipe 50, the flow rate control device 54 and the spiral introduction pipe 52 with the carrier gas of a predetermined amount and temperature. To do. On the other hand, while the atmospheric gas is discharged from above the sheath 20 through the discharge pipe 40, the cooler 42 and the flow rate control device 44 while being controlled, the atmosphere in the sheath 20 is controlled more precisely, and the object to be fired is controlled. 22 is fired. As described above, since the firing can be performed while actively and precisely controlling the atmosphere in the sheath 20, the performance of the obtained sintered body can be made uniform.

【0019】(実施例1)粒径0.6μm、酸素含有量
1.5重量%、比表面積12m2/gのSi3N4粉末8
6重量%と、粒径0.5μm、比表面積10m2/gの
Yb2O3粉末9重量%と、粒径0.2μm、比表面積2
0m2/gのSiC粉末2重量%と、MgO粉末3重量
%とを混合・粉砕・造粒して成形用粉末を得た。この成
形用粉末を50×50×10mmの大きさに一軸プレス
し、次いで、冷間静水圧プレスしてセラミックス成形体
を得た。
(Example 1) Si 3 N 4 powder 8 having a particle size of 0.6 μm, an oxygen content of 1.5% by weight, and a specific surface area of 12 m 2 / g.
6% by weight, Yb 2 O 3 powder having a particle size of 0.5 μm and a specific surface area of 10 m 2 / g 9% by weight, a particle size of 0.2 μm and a specific surface area of 2
2 % by weight of 0 m 2 / g SiC powder and 3% by weight of MgO powder were mixed, pulverized and granulated to obtain a molding powder. This molding powder was uniaxially pressed into a size of 50 × 50 × 10 mm and then cold isostatically pressed to obtain a ceramic molded body.

【0020】得られた成形体を上記焼成装置1の窒化珪
素製サヤ20内に設置し、雰囲気制御室30にはSi3
N4/SiO2=9/1(重量比)の割合で作成されたペ
レットを充填した。サヤ20内を排出管16を介して真
空引きした後、N2ガスを導入管14を介して9気圧ま
で導入し、ヒータ12に通電して上記成形体を加熱し
た。
The molded body thus obtained was placed in the silicon nitride sheath 20 of the firing apparatus 1, and Si 3 was placed in the atmosphere control chamber 30.
Pellets made at a ratio of N 4 / SiO 2 = 9/1 (weight ratio) were filled. After the inside of the sheath 20 was evacuated through the discharge pipe 16, N 2 gas was introduced up to 9 atm through the introduction pipe 14, and the heater 12 was energized to heat the molded body.

【0021】焼成の最高温度である1800℃に達した
際に、流量制御装置54で0.5l/minの流量に制
御したN2ガスを、導入管50、渦巻導入管52及び雰
囲気制御室30介してサヤ20に充填した。また、この
際、サヤ20内の雰囲気ガスを、排出管40を介して流
量制御装置44により0.5l/minの流量に制御し
ながら排出した。
When the maximum calcination temperature of 1800 ° C. is reached, the N 2 gas whose flow rate is controlled to 0.5 l / min by the flow control device 54 is introduced into the introduction pipe 50, the swirl introduction pipe 52 and the atmosphere control chamber 30. Saya 20 was filled via At this time, the atmospheric gas in the sheath 20 was discharged through the discharge pipe 40 while the flow rate control device 44 controlled the flow rate to 0.5 l / min.

【0022】上記最高温度に達してから3時間経過した
後、N2ガスの導入を停止するとともに、ヒータ12の
通電を停止した。得られた焼結体の表面をそのまま引張
面とした板体及びこれを研削加工して表面粗度を0.8
sにした加工体から、3×4×40mmの試験片を切り
出し、常温及び1200℃でJIS R 1601に準
拠した抗折試験を行い、得られた結果を表1に示した。
また、相対密度も併記した。
After 3 hours had passed since the maximum temperature was reached, the introduction of N 2 gas was stopped, and the energization of the heater 12 was stopped. A plate body in which the surface of the obtained sintered body was used as a tensile surface as it was and was ground to a surface roughness of 0.8.
A test piece of 3 × 4 × 40 mm was cut out from the processed product obtained as s, and a bending test according to JIS R 1601 was performed at room temperature and 1200 ° C., and the obtained results are shown in Table 1.
The relative density is also shown.

【0023】(比較例1)実施例1と同様の成形体を作
成した。この成形体をガス導入機構を有さない通常の焼
結炉を用いて焼成を行った。即ち、焼成装置としては、
キャリアガス導入管50、渦巻型導入管52、雰囲気制
御室30及び雰囲気排出管40を備えていない以外は、
焼成装置1と同様である。上記成形体を窒化珪素製サヤ
内に設置し、実施例1と同様の操作を繰り返し、得られ
た結果を表1に示した。
Comparative Example 1 A molded body similar to that of Example 1 was prepared. The compact was fired using a normal sintering furnace having no gas introduction mechanism. That is, as a firing device,
Except that the carrier gas introduction pipe 50, the spiral introduction pipe 52, the atmosphere control chamber 30, and the atmosphere discharge pipe 40 are not provided,
It is similar to the firing apparatus 1. The above-mentioned molded body was placed in a silicon nitride sheath and the same operation as in Example 1 was repeated. The obtained results are shown in Table 1.

【0024】(実施例2)粒径0.6μm、酸素含有量
1.4重量%、比表面積13m2/gのSi3N4粉末8
4重量%と、粒径0.9μm、比表面積8m2/gのS
c2O3粉末3重量%と、粒径0.8μm、比表面積9m
2/gのYb2O3粉末13重量%とを混合・粉砕・造粒
して成形用粉末を得た。この成形用粉末を50×50×
50mmの大きさに一軸プレスし、次いで、冷間静水圧
プレスしてセラミックス成形体を得た。
Example 2 Si 3 N 4 powder 8 having a particle size of 0.6 μm, an oxygen content of 1.4% by weight and a specific surface area of 13 m 2 / g.
4% by weight, S having a particle size of 0.9 μm and a specific surface area of 8 m 2 / g
c 2 O 3 powder 3% by weight, particle size 0.8 μm, specific surface area 9 m
13% by weight of 2 / g Yb 2 O 3 powder was mixed, pulverized and granulated to obtain a molding powder. 50 × 50 × this molding powder
It was uniaxially pressed into a size of 50 mm and then cold isostatically pressed to obtain a ceramic molded body.

【0025】得られた成形体を焼成装置1のサヤ20内
に設置し、雰囲気制御室30にはBN/C=20/1
(重量比)の割合で作成されたペレットを充填した。サ
ヤ20内を排出管16を介して真空引きした後、N2ガ
スを導入管14を介して9気圧まで導入し、ヒータ12
に通電して上記成形体を加熱した。
The obtained molded body was set in the sheath 20 of the firing apparatus 1, and BN / C = 20/1 was set in the atmosphere control chamber 30.
The pellets prepared in the ratio (weight ratio) were filled. After vacuuming the inside of the sheath 20 through the discharge pipe 16, N 2 gas is introduced up to 9 atm through the introduction pipe 14, and the heater 12
Was energized to heat the molded body.

【0026】500℃/hrで昇温し、1700℃に達
した際から2000℃に昇温するまで、実施例1と同様
にして1.0l/minの流量でN2ガスをサヤ20に
導入し、焼成最高温度である2000℃に到達した時点
でN2ガスの導入を停止した。この状態で4時間保持し
た後、冷却して焼結体(42×42×42mm)を得
た。得られた焼結体の相対密度を測定し、また、焼成面
(焼結体を後加工しない焼成後そのままの面)から0.
3mm及び10mmの厚さ(深さ)が、上記JISサイ
ズの試験片の厚さの中心近傍になるように試験片を切り
出し、実施例1と同様に常温及び1400℃で抗折強度
を測定した。なお、試験片の表面粗度は0.8sであっ
た。得られた結果を表2に示す。
The temperature was raised at 500 ° C./hr, and N 2 gas was introduced into the sheath 20 at a flow rate of 1.0 l / min in the same manner as in Example 1 from when the temperature reached 1700 ° C. until the temperature was raised to 2000 ° C. Then, the introduction of N 2 gas was stopped when the maximum firing temperature of 2000 ° C. was reached. After holding in this state for 4 hours, it was cooled to obtain a sintered body (42 × 42 × 42 mm). The relative density of the obtained sintered body was measured, and from the surface to be fired (the surface of the sintered body as it is after firing without post-processing),
The test piece was cut out so that the thickness (depth) of 3 mm and 10 mm was near the center of the thickness of the JIS size test piece, and the bending strength was measured at room temperature and 1400 ° C. as in Example 1. . The surface roughness of the test piece was 0.8 s. The obtained results are shown in Table 2.

【0027】(比較例2)比較例1と同様の焼成装置を
用いた以外は、実施例2と同様の操作を行い、得られた
結果を表2に示した。
Comparative Example 2 The same operation as in Example 2 was carried out except that the same baking apparatus as in Comparative Example 1 was used, and the results obtained are shown in Table 2.

【0028】(実施例3)粒径0.6μm、酸素含有量
2.0重量%、比表面積13m2/gのSi3N4粉末9
2重量%と、粒径0.8μm、比表面積8m2/gのY2
O3粉末8重量%とを原料粉末とし、実施例1と同様に
してセラミックス成形体を得た。雰囲気制御室30にS
i3N4/SiO2=5/1(重量比)の割合で作成され
たペレットを充填し、サヤ20内を真空引きした後にN
2ガスを9気圧まで導入し、加熱を開始した。
Example 3 Si 3 N 4 powder 9 having a particle size of 0.6 μm, an oxygen content of 2.0% by weight and a specific surface area of 13 m 2 / g
2% by weight, Y 2 having a particle size of 0.8 μm and a specific surface area of 8 m 2 / g
A ceramic compact was obtained in the same manner as in Example 1, except that 8% by weight of O 3 powder was used as the raw material powder. S in the atmosphere control room 30
i 3 N 4 / SiO 2 = 5/1 (weight ratio) was filled with the pellets, and the inside of the sheath 20 was evacuated to N.
2 gases were introduced up to 9 atm and heating was started.

【0029】1000℃/hrで昇温し、1700℃に
達した時点から2時間温度を保持し、1l/minの流
量でN2ガスをサヤ20に導入した。この2時間経過
後、焼成最高温度である1900℃に到達した際にN2
ガスの導入を停止し、そのまま2時間保持した。次い
で、冷却して焼結体を得、実施例1と同様の抗折試験を
行い、得られた結果を表3に示した。
The temperature was raised at 1000 ° C./hr, the temperature was maintained for 2 hours after reaching 1700 ° C., and N 2 gas was introduced into the sheath 20 at a flow rate of 1 l / min. After 2 hours, when the maximum firing temperature of 1900 ° C. was reached, N 2
The introduction of gas was stopped and the gas was maintained for 2 hours. Then, it was cooled to obtain a sintered body, and the same bending test as in Example 1 was performed. The obtained results are shown in Table 3.

【0030】(比較例3)実施例3と同様の成形体を、
比較例1の焼成装置を用いて焼成した以外は、実施例3
と同様の操作を行い、得られた結果を表3に示した。
(Comparative Example 3) A molded body similar to that of Example 3 was used.
Example 3 except that firing was performed using the firing apparatus of Comparative Example 1.
The same operation as above was performed, and the obtained results are shown in Table 3.

【0031】[0031]

【表1】 [Table 1]

【0032】[0032]

【表2】 [Table 2]

【0033】[0033]

【表3】 [Table 3]

【0034】表1〜表3から明らかなように、本発明の
範囲に含まれる実施例1〜3によれば優れた性能を有す
る焼結体を得ることができる。即ち、実施例1及び3で
は、焼成後の表面をそのまま抗折試験片の引張面として
も、高強度な焼結体が得られた。また、実施例2では、
焼結体内部まで高強度な焼結体が得られた。以上、本発
明を実施例により説明したが、本発明はこれに限定され
るものではなく、本発明の要旨の範囲内で種々の変形が
可能である。例えば、本発明は、焼成処理のみならず、
酸化処理、仮焼等の他の熱処理にも適用できる。また、
雰囲気排出管40、キャリアガス導入管50等は必ずし
も必要ではなく、雰囲気制御材料の充填量を調整するこ
と等により同様の効果を奏することもできる。
As is clear from Tables 1 to 3, according to Examples 1 to 3 included in the scope of the present invention, it is possible to obtain a sintered body having excellent performance. That is, in Examples 1 and 3, a high-strength sintered body was obtained even if the surface after firing was used as the tensile surface of the bending test piece as it was. In addition, in the second embodiment,
A high-strength sintered body was obtained inside the sintered body. Although the present invention has been described with reference to the embodiments, the present invention is not limited to the embodiments and various modifications can be made within the scope of the gist of the present invention. For example, the present invention is not limited to firing treatment,
It can also be applied to other heat treatments such as oxidation treatment and calcination. Also,
The atmosphere discharge pipe 40, the carrier gas introduction pipe 50 and the like are not always necessary, and the same effect can be obtained by adjusting the filling amount of the atmosphere control material.

【0035】[0035]

【発明の効果】以上説明したように、本発明によれば、
特定の雰囲気制御室を設けることにしたため、セラミッ
クス材を熱処理する雰囲気を能動的且つ精密に制御で
き、得られるセラミックス材の強度等の物性を向上でき
る雰囲気制御熱処理装置及び熱処理方法を提供すること
ができる。
As described above, according to the present invention,
Since a specific atmosphere control chamber is provided, it is possible to provide an atmosphere control heat treatment apparatus and a heat treatment method capable of actively and precisely controlling the atmosphere for heat-treating a ceramic material and improving the physical properties such as strength of the obtained ceramic material. it can.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の熱処理装置の一実施例を示す断面図で
ある。
FIG. 1 is a cross-sectional view showing an embodiment of a heat treatment apparatus of the present invention.

【符号の説明】[Explanation of symbols]

1 焼成装置 10 装置本体 12 カーボン製ヒータ 20 サヤ 22 被焼成体 30 雰囲気制御室 32 雰囲気制御材料 40 雰囲気排出管 50 キャリアガス導入管 52 渦巻型導入管 DESCRIPTION OF SYMBOLS 1 Firing apparatus 10 Main body 12 Carbon heater 20 Saya 22 Object to be fired 30 Atmosphere control chamber 32 Atmosphere control material 40 Atmosphere discharge pipe 50 Carrier gas introduction pipe 52 Whirlpool introduction pipe

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 熱処理装置本体内に、被熱処理体を配置
する熱処理室を配設して成るセラミックス材用の熱処理
装置であって、該熱処理室の近傍に、雰囲気制御材料を
充填した雰囲気制御室を備え、この雰囲気制御室と上記
熱処理室とが通気性を有する状態で連結されて成ること
を特徴とする雰囲気制御熱処理装置。
1. A heat treatment apparatus for a ceramic material, comprising a heat treatment chamber for arranging an object to be heat treated in a main body of the heat treatment apparatus, wherein an atmosphere control material is filled with an atmosphere control material in the vicinity of the heat treatment chamber. An atmosphere controlled heat treatment apparatus comprising a chamber, wherein the atmosphere control chamber and the heat treatment chamber are connected in a state of having air permeability.
【請求項2】 上記雰囲気制御室と連結するキャリアガ
ス導入管及び/又は上記熱処理室と連結する雰囲気排出
管を備えることを特徴とする請求項1記載の熱処理装
置。
2. The heat treatment apparatus according to claim 1, further comprising a carrier gas introduction pipe connected to the atmosphere control chamber and / or an atmosphere discharge pipe connected to the heat treatment chamber.
【請求項3】 上記雰囲気制御室とキャリアガス導入管
との間に、キャリアガス加熱領域を介在させたことを特
徴とする請求項1又は2記載の熱処理装置。
3. The heat treatment apparatus according to claim 1, wherein a carrier gas heating region is interposed between the atmosphere control chamber and the carrier gas introduction pipe.
【請求項4】 上記雰囲気制御材料が、カーボン、炭化
物、酸化物、窒化物及びホウ化物より成る群から選ばれ
た1又は2種以上の材料であることを特徴とする請求項
1〜3のいずれか1つの項に記載の熱処理装置。
4. The atmosphere control material is one or two or more materials selected from the group consisting of carbon, carbides, oxides, nitrides and borides. The heat treatment apparatus according to any one of the items.
【請求項5】 セラミックス材を熱処理するに当たり、
被熱処理体を配置する熱処理室内の雰囲気を、この熱処
理室に通気性を有する状態で連結されて成る雰囲気制御
室からの雰囲気制御ガスにより能動的に制御しながら熱
処理することを特徴とするセラミックス材の製造方法。
5. When heat-treating a ceramic material,
A ceramic material characterized by performing heat treatment while actively controlling the atmosphere in the heat treatment chamber in which the object to be heat treated is to be controlled by an atmosphere control gas from an atmosphere control chamber connected to the heat treatment chamber in a breathable state. Manufacturing method.
【請求項6】 セラミックス材を熱処理するに当たり、
被熱処理体を配置した熱処理室内の雰囲気を、雰囲気制
御ガスとキャリアガスの種類及び分圧を調整することに
より、上記被熱処理体に適合するように制御しながら熱
処理することを特徴とするセラミックス材の熱処理方
法。
6. When heat-treating a ceramic material,
A ceramic material characterized by performing heat treatment while controlling the atmosphere in the heat treatment chamber in which the object to be heat treated is adjusted so as to match the object to be heat treated by adjusting the types and partial pressures of the atmosphere control gas and the carrier gas. Heat treatment method.
JP5036849A 1993-02-25 1993-02-25 Atmosphere control heat treatment apparatus and heat treatment method Expired - Fee Related JP2651101B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publications (2)

Publication Number Publication Date
JPH06249582A true JPH06249582A (en) 1994-09-06
JP2651101B2 JP2651101B2 (en) 1997-09-10

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Country Link
JP (1) JP2651101B2 (en)

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* Cited by examiner, † Cited by third party
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JP2002333283A (en) * 2001-05-09 2002-11-22 Murata Mfg Co Ltd Heat treatment furnace and gas supply method therefor
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002333283A (en) * 2001-05-09 2002-11-22 Murata Mfg Co Ltd Heat treatment furnace and gas supply method therefor
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