JPH06251978A - Soft magnetic thin film and manufacture thereof - Google Patents
Soft magnetic thin film and manufacture thereofInfo
- Publication number
- JPH06251978A JPH06251978A JP6088993A JP6088993A JPH06251978A JP H06251978 A JPH06251978 A JP H06251978A JP 6088993 A JP6088993 A JP 6088993A JP 6088993 A JP6088993 A JP 6088993A JP H06251978 A JPH06251978 A JP H06251978A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- magnetic thin
- ions
- plating bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000007747 plating Methods 0.000 claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 34
- 229910052742 iron Inorganic materials 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 44
- -1 organic acid ions Chemical class 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 12
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 4
- 229940095064 tartrate Drugs 0.000 claims description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 claims description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 15
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 239000006185 dispersion Substances 0.000 abstract 1
- 150000007524 organic acids Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 59
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 39
- 239000010949 copper Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000000203 mixture Substances 0.000 description 15
- 239000012071 phase Substances 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 229910003321 CoFe Inorganic materials 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 229910000889 permalloy Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- FTLYMKDSHNWQKD-UHFFFAOYSA-N (2,4,5-trichlorophenyl)boronic acid Chemical compound OB(O)C1=CC(Cl)=C(Cl)C=C1Cl FTLYMKDSHNWQKD-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000003841 chloride salts Chemical class 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- AVTYONGGKAJVTE-OLXYHTOASA-L potassium L-tartrate Chemical compound [K+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O AVTYONGGKAJVTE-OLXYHTOASA-L 0.000 description 2
- 239000001472 potassium tartrate Substances 0.000 description 2
- 229940111695 potassium tartrate Drugs 0.000 description 2
- 235000011005 potassium tartrates Nutrition 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229940085605 saccharin sodium Drugs 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 2
- 239000001476 sodium potassium tartrate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 1
- 230000005330 Barkhausen effect Effects 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910002549 Fe–Cu Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910018499 Ni—F Inorganic materials 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- WLQXLCXXAPYDIU-UHFFFAOYSA-L cobalt(2+);disulfamate Chemical compound [Co+2].NS([O-])(=O)=O.NS([O-])(=O)=O WLQXLCXXAPYDIU-UHFFFAOYSA-L 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000003014 ion exchange membrane Substances 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GPUMPJNVOBTUFM-UHFFFAOYSA-N naphthalene-1,2,3-trisulfonic acid Chemical compound C1=CC=C2C(S(O)(=O)=O)=C(S(O)(=O)=O)C(S(=O)(=O)O)=CC2=C1 GPUMPJNVOBTUFM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000003405 preventing effect Effects 0.000 description 1
- FWLKYEAOOIPJRL-UHFFFAOYSA-N prop-1-yn-1-ol Chemical compound CC#CO FWLKYEAOOIPJRL-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- HELHAJAZNSDZJO-OLXYHTOASA-L sodium L-tartrate Chemical compound [Na+].[Na+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O HELHAJAZNSDZJO-OLXYHTOASA-L 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 239000001433 sodium tartrate Substances 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 235000011004 sodium tartrates Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Thin Magnetic Films (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、湿式めっき法を用いて
軟磁性薄膜を製造する方法と、軟磁性薄膜とに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a soft magnetic thin film using a wet plating method and a soft magnetic thin film.
【0002】[0002]
【従来の技術】薄膜磁気ヘッドや薄膜トランスの磁性薄
膜には、低保磁力、高飽和磁束密度等の優れた軟磁気特
性が要求されると同時に、信頼性向上のために高耐食性
が必要とされる。このような磁性薄膜は、スパッタ法等
の気相成膜法やめっき法等の液相成膜法により形成され
るのが一般的であるが、めっき法には、大面積の成膜が
容易でしかも均一性の高い膜が得られ、また、工数が少
なく設備が安価であるという利点がある。2. Description of the Related Art Magnetic thin films for thin film magnetic heads and thin film transformers are required to have excellent soft magnetic characteristics such as low coercive force and high saturation magnetic flux density, and at the same time, high corrosion resistance for improving reliability. To be done. Such a magnetic thin film is generally formed by a vapor phase film forming method such as a sputtering method or a liquid phase film forming method such as a plating method, but the plating method can easily form a large area film. Moreover, there is an advantage that a highly uniform film can be obtained, and the number of steps is small and the equipment is inexpensive.
【0003】近年の記録密度の上昇は、記録媒体の保磁
力の上昇による部分が大きい。保磁力の大きな記録媒体
に十分に書き込むためには、記録ヘッドからより強い磁
界を発生する必要がある。また、MRインダクティブ複
合ヘッドのシールド層の磁性材料にも、高密度記録のた
めにはより薄い膜で所望のシールド効果が期待できる高
飽和磁束密度材料が必要となってきている。このため、
従来から広く使用されてきたNi−Fe合金(パーマロ
イ)以上の高飽和磁束密度材料が求められている。The increase in the recording density in recent years is largely due to the increase in the coercive force of the recording medium. In order to sufficiently write on a recording medium having a large coercive force, it is necessary to generate a stronger magnetic field from the recording head. Further, for the magnetic material of the shield layer of the MR inductive composite head, a high saturation magnetic flux density material which can be expected to have a desired shield effect with a thinner film is required for high density recording. For this reason,
There is a demand for a high saturation magnetic flux density material that is more than the Ni-Fe alloy (permalloy) that has been widely used in the past.
【0004】このような磁気特性的な要求を満たす軟磁
性めっき膜の一つとしては、Co−Fe系合金が挙げら
れる。例えば、特願平3−122515号には、ナフタ
レントリスルホン酸とプロピンオールとを用いSを共析
したCoFe軟磁性膜が開示されている。このCoFe
軟磁性膜では粒子微細化が実現し、保磁力1 Oe 以下の
値が報告されている。As one of the soft magnetic plating films satisfying such requirements for magnetic characteristics, a Co--Fe based alloy can be mentioned. For example, Japanese Patent Application No. 3-122515 discloses a CoFe soft magnetic film obtained by co-depositing S using naphthalenetrisulfonic acid and propynol. This CoFe
In soft magnetic films, grain refinement has been realized, and coercive force values of 1 Oe or less have been reported.
【0005】また、国際電気化学協会(ISE)のPROC
EEDINGS OF THE SYMPOSIUM ON MAGNETIC MATERIALS,PRO
CESSES AND DEVICES,90-8,361(1990) には、Feが10
〜14重量%のCoFe合金の結晶構造、磁気特性、熱
処理による磁気特性の劣化等が報告されている。この報
告では、Feが11.5重量%付近で最小の保磁力(約
3 Oe )が得られている。The International Electrochemical Society (ISE) PROC
EEDINGS OF THE SYMPOSIUM ON MAGNETIC MATERIALS, PRO
Fe is 10 in CESSES AND DEVICES, 90-8,361 (1990)
It has been reported that the crystal structure, magnetic properties, and deterioration of magnetic properties due to heat treatment of a CoFe alloy of up to 14% by weight. In this report, the minimum coercive force (about 3 Oe) is obtained in the vicinity of 11.5 wt% Fe.
【0006】しかし、CoFe合金は、従来から広く使
用されている比較的低飽和磁束密度材料であるNi−F
e合金と比較すると耐食性が劣っていた。また、結晶磁
気異方性の大きな組成系であるために、目的とされる一
軸磁気異方性を付与するための粒子の微細化は困難であ
った。However, the CoFe alloy is a Ni-F which is a relatively low saturation magnetic flux density material which has been widely used in the past.
The corrosion resistance was inferior to that of the e alloy. Further, since the composition system has a large crystal magnetic anisotropy, it is difficult to make the particles fine for imparting the desired uniaxial magnetic anisotropy.
【0007】耐食性向上のためには第3元素の添加が有
効であり、例えば、Rhを添加した場合には高特性を保
ちつつ耐食性を向上することができる(特願平4−41
92号)が、Rhは極めて高価である。The addition of the third element is effective for improving the corrosion resistance. For example, when Rh is added, the corrosion resistance can be improved while maintaining high characteristics (Japanese Patent Application No. 4-41).
92), but Rh is extremely expensive.
【0008】ところで、CoFe合金めっき膜へのCu
の添加が保磁力低下に効果のあることが国際電気化学協
会(ISE)のPROCEEDINGS OF THE SYMPOSIUM ON MAGN
ETICMATERIALS,PROCESSES AND DEVICES,91-2,p579に報
告されている。この報告では、0.6 Oe の保磁力とパ
ーマロイの2倍の飽和磁束密度がFe含有量10.5重
量%のときに得られている。この報告におけるCoFe
Cu合金めっき膜は、fcc相とbcc相とが混在した
構造である。また、保磁力の低い組成範囲は主としてF
eの含有量によって支配され、Feの含有量が10〜1
2重量%の狭い範囲でだけ1 Oe 以下の保磁力となって
いる。一方、Cuに関しては、2重量%以上含まれれば
保磁力が低くなり、Hk の制御のために添加量を決定す
ることなどが開示されている。By the way, Cu on the CoFe alloy plating film
It is effective to reduce coercive force by the addition of PROCEEDINGS OF THE SYMPOSIUM ON MAGN of the International Electrochemical Society (ISE).
Reported in ETIC MATERIALS, PROCESSES AND DEVICES, 91-2, p579. In this report, a coercive force of 0.6 Oe and a saturation magnetic flux density twice as high as that of permalloy are obtained when the Fe content is 10.5% by weight. CoFe in this report
The Cu alloy plated film has a structure in which the fcc phase and the bcc phase are mixed. The composition range of low coercive force is mainly F
The content of Fe is controlled by the content of e, and the content of Fe is 10 to 1
The coercive force is less than 1 Oe only in a narrow range of 2% by weight. On the other hand, regarding Cu, the coercive force becomes low if it is contained in an amount of 2% by weight or more, and it is disclosed that the addition amount is determined for controlling Hk.
【0009】しかし、CoおよびFeとCuとは析出電
位が大きく異なるために安定した成膜が困難であり、特
にめっき浴のpHにより組成が大きく変化するため、連
続成膜では組成変動による磁気特性変化が問題となる。
また、上記報告ではbccとfccとの混合相のときに
高特性が得られているが、これらの相の存在比率が変化
したときに特性も変化しやすいと考えられる。However, since the deposition potentials of Co, Fe, and Cu are greatly different from each other, stable film formation is difficult. Particularly, the composition greatly changes depending on the pH of the plating bath. Change is a problem.
Further, in the above report, high characteristics were obtained in the mixed phase of bcc and fcc, but it is considered that the characteristics are likely to change when the abundance ratio of these phases changes.
【0010】[0010]
【発明が解決しようとする課題】本発明はこのような事
情からなされたものであり、低保磁力、高飽和磁束密度
および高耐食性を有する軟磁性薄膜を、特性のばらつき
を抑え安定して提供することを目的とする。The present invention has been made under such circumstances, and provides a soft magnetic thin film having a low coercive force, a high saturation magnetic flux density and a high corrosion resistance, stably suppressing variations in characteristics. The purpose is to do.
【0011】[0011]
【課題を解決するための手段】このような目的は、下記
(1)〜(10)の本発明により達成される。 (1)Co、FeおよびCuを主成分とする軟磁性薄膜
を湿式めっき法を用いて製造する方法であって、Coイ
オン、FeイオンおよびCuイオンに加え、有機酸イオ
ンを含むめっき浴を用いることを特徴とする軟磁性薄膜
の製造方法。 (2)前記有機酸イオンがコハク酸イオン、クエン酸イ
オン、マロン酸イオン、マレイン酸イオン、グルコン酸
イオンおよび酒石酸イオンから選択される少なくとも1
種である上記(1)の軟磁性薄膜の製造方法。 (3)前記有機酸イオンとして酒石酸イオンを用いる上
記(2)の軟磁性薄膜の製造方法。 (4)前記有機酸イオンのめっき浴中の濃度が0.01
〜1.0モル/リットルである上記(1)ないし(3)
のいずれかの軟磁性薄膜の製造方法。 (5)Co、FeおよびCuを主成分とする軟磁性薄膜
を湿式めっき法を用いて製造する方法であって、実質的
にClイオンを含有しないめっき浴を用いることを特徴
とする軟磁性薄膜の製造方法。 (6)めっき浴中のCoイオン、FeイオンおよびCu
イオンの供給源として硫酸塩を用いる上記(5)の軟磁
性薄膜の製造方法。 (7)前記めっき浴として上記(1)ないし(4)のい
ずれかに記載のめっき浴を用いる上記(5)または
(6)の軟磁性薄膜の製造方法。 (8)軟磁性薄膜形成後、磁界中アニールを施す上記
(1)ないし(7)のいずれかの軟磁性薄膜の製造方
法。 (9)Cu含有量が4〜30重量%、Fe含有量が2〜
13重量%、残部が実質的にCoであって、上記(1)
ないし(8)のいずれかの製造方法により形成されたこ
とを特徴とする軟磁性薄膜。 (10)Co、FeおよびCuを主成分とする軟磁性薄
膜であって、fcc相から構成され、保磁力が1 Oe 以
下であることを特徴とする軟磁性薄膜。The above objects are achieved by the present invention described in (1) to (10) below. (1) A method for producing a soft magnetic thin film containing Co, Fe and Cu as main components by a wet plating method, which uses a plating bath containing an organic acid ion in addition to Co ion, Fe ion and Cu ion. A method for manufacturing a soft magnetic thin film, comprising: (2) The organic acid ion is at least 1 selected from succinate ion, citrate ion, malonate ion, maleate ion, gluconate ion and tartrate ion.
The method for producing a soft magnetic thin film according to (1) above, which is a seed. (3) The method for producing a soft magnetic thin film according to (2) above, wherein tartrate ions are used as the organic acid ions. (4) The concentration of the organic acid ion in the plating bath is 0.01
~ 1.0 mol / liter above (1) to (3)
1. A method for manufacturing a soft magnetic thin film according to any one of 1. (5) A method for producing a soft magnetic thin film containing Co, Fe and Cu as main components by a wet plating method, characterized in that a plating bath containing substantially no Cl ions is used. Manufacturing method. (6) Co ions, Fe ions and Cu in the plating bath
The method for producing a soft magnetic thin film according to (5) above, wherein sulfate is used as a source of ions. (7) The method for producing a soft magnetic thin film according to (5) or (6), wherein the plating bath according to any one of (1) to (4) is used as the plating bath. (8) The method for producing a soft magnetic thin film according to any one of (1) to (7) above, which comprises performing annealing in a magnetic field after forming the soft magnetic thin film. (9) Cu content of 4 to 30 wt% and Fe content of 2
13% by weight, the balance being substantially Co, the above (1)
A soft magnetic thin film formed by the method according to any one of (1) to (8). (10) A soft magnetic thin film containing Co, Fe and Cu as main components, which is composed of an fcc phase and has a coercive force of 1 Oe or less.
【0012】[0012]
【作用および効果】本発明では、酒石酸イオン等の有機
酸イオンを含むめっき浴を用いるので、めっき浴の安定
性、特にpH安定性が良好であり、高特性の軟磁性薄膜
を安定して製造することができる。In the present invention, since the plating bath containing organic acid ions such as tartrate ion is used, the stability of the plating bath, particularly the pH stability is good, and the soft magnetic thin film having high characteristics can be stably produced. can do.
【0013】また、連続成膜を行なうとめっき浴のpH
が高くなりやすく、このときには形成される膜の保磁力
が高くなってしまうが、本発明ではClイオンを実質的
に含有しないめっき浴を用いることにより、めっき浴の
pHが高くなったときにも低保磁力の軟磁性薄膜を形成
することができる。また、この場合、内部応力の小さい
軟磁性薄膜を形成できるので、厚さを4μm 以上とした
場合でも低保磁力が得られ、薄膜磁気ヘッドや薄膜トラ
ンスのコアに極めて好適な軟磁性薄膜が得られる。Further, when continuous film formation is performed, the pH of the plating bath is
Tends to be high, and at this time the coercive force of the formed film is high. However, in the present invention, by using a plating bath that does not substantially contain Cl ions, even when the pH of the plating bath becomes high. A soft magnetic thin film having a low coercive force can be formed. Further, in this case, since a soft magnetic thin film with a small internal stress can be formed, a low coercive force can be obtained even when the thickness is 4 μm or more, and a soft magnetic thin film extremely suitable for the core of a thin film magnetic head or a thin film transformer can be obtained. To be
【0014】本発明の軟磁性薄膜は、Cuを含有するた
めに耐食性が良好であり、磁気特性の経時的変化が少な
く信頼性が高い。具体的には、0.1N−HCl溶液中
で銀/塩化銀電極を基準電極に用いたときの自然電位と
して−100mV以上の値が得られる。これはパーマロ
イと同等以上の耐食性である。また、2 Oe 以下、さら
には1 Oe 以下の低保磁力が容易に得られる。fcc相
とbcc相との混合相では、製造条件の微妙な違いによ
り各相の割合が変動し、これに伴なって磁気特性も変動
してしまうが、本発明ではfcc単相構造で1 Oe 以下
の低保磁力が得られるので、低保磁力軟磁性薄膜を安定
して製造することができる。Since the soft magnetic thin film of the present invention contains Cu, it has good corrosion resistance, has little change in magnetic characteristics over time, and has high reliability. Specifically, when a silver / silver chloride electrode is used as a reference electrode in a 0.1N-HCl solution, a value of -100 mV or more is obtained as a spontaneous potential. It has corrosion resistance equal to or higher than that of permalloy. Further, a low coercive force of 2 Oe or less, and further 1 Oe or less can be easily obtained. In the mixed phase of the fcc phase and the bcc phase, the ratio of each phase fluctuates due to a subtle difference in the manufacturing conditions, and the magnetic characteristics also fluctuate with it, but in the present invention, the fcc single phase structure is 1 Oe. Since the following low coercive force can be obtained, the low coercive force soft magnetic thin film can be stably manufactured.
【0015】[0015]
【具体的構成】以下、本発明の具体的構成について詳細
に説明する。Specific Structure The specific structure of the present invention will be described in detail below.
【0016】本発明では、湿式めっき法を用いて軟磁性
薄膜を形成する。本発明により製造される軟磁性薄膜
は、Co、FeおよびCuを主成分とする。In the present invention, the soft magnetic thin film is formed by using the wet plating method. The soft magnetic thin film produced by the present invention contains Co, Fe and Cu as main components.
【0017】Cuの含有量は好ましくは4〜30重量
%、より好ましくは5〜25重量%である。Cu含有量
が前記範囲未満であると十分な磁気特性および耐食性が
得られず、前記範囲を超えると飽和磁束密度が低下して
しまう。The content of Cu is preferably 4 to 30% by weight, more preferably 5 to 25% by weight. When the Cu content is less than the above range, sufficient magnetic properties and corrosion resistance cannot be obtained, and when it exceeds the above range, the saturation magnetic flux density is reduced.
【0018】Feの含有量は好ましくは2〜13重量
%、より好ましくは8〜12重量%である。Fe含有量
が前記範囲未満であると飽和磁束密度が低く、前記範囲
を超えるとbcc相が現れ、磁歪が正側に大きくなると
同時に磁気特性も低くなる。The content of Fe is preferably 2 to 13% by weight, more preferably 8 to 12% by weight. When the Fe content is less than the above range, the saturation magnetic flux density is low, and when the Fe content exceeds the above range, the bcc phase appears, the magnetostriction increases to the positive side, and at the same time, the magnetic characteristics also deteriorate.
【0019】本発明では、めっき浴としてCoイオン、
FeイオンおよびCuイオンを含むめっき浴を用いる。
本発明ではClイオンを実質的に含有しないめっき浴を
用いることが好ましいので、Co、Fe、Cuの各イオ
ンの供給源は、硫酸塩、スルファミン酸塩、酢酸塩、硝
酸塩等の塩化物を含まない水溶性の塩から選択すること
が好ましく、安価であることから特に硫酸塩を用いるこ
とが好ましい。また、CoイオンおよびFeイオンは、
金属をめっき浴中に浸漬して自然溶解させたり、電解に
より陽極を溶解させることにより供給することもでき
る。In the present invention, Co ions are used as the plating bath,
A plating bath containing Fe ions and Cu ions is used.
In the present invention, since it is preferable to use a plating bath that does not substantially contain Cl ions, the sources of Co, Fe, and Cu ions include chlorides such as sulfate, sulfamate, acetate, and nitrate. It is preferable to select a water-insoluble salt, and it is particularly preferable to use a sulfate because it is inexpensive. In addition, Co ions and Fe ions are
The metal can be supplied by immersing it in a plating bath to spontaneously dissolve it or by dissolving the anode by electrolysis.
【0020】なお、めっき浴中にはClイオンが全く含
有されないことが最も好ましいが、実質的に含有されな
ければ、例えばClイオン濃度が好ましくは0.01モ
ル/リットル以下であれば、十分な効果が得られる。It is most preferable that the plating bath contains no Cl ion at all, but if it does not substantially contain Cl ion, for example, the Cl ion concentration is preferably 0.01 mol / liter or less. The effect is obtained.
【0021】めっき浴中におけるCoイオンの濃度は、
好ましくは0.05〜5モル/リットル、より好ましく
は0.1〜1モル/リットルである。Coイオン濃度が
前記範囲未満であると析出速度の低下が著しくなり、前
記範囲を超えるとめっき浴の粘度が上昇して作業性が低
下し、また、微細なレジストパターン内への成膜が困難
となる。The concentration of Co ions in the plating bath is
It is preferably 0.05 to 5 mol / liter, more preferably 0.1 to 1 mol / liter. When the Co ion concentration is less than the above range, the deposition rate is remarkably reduced, and when it exceeds the above range, the viscosity of the plating bath is increased and the workability is deteriorated, and it is difficult to form a film in a fine resist pattern. Becomes
【0022】めっき浴中におけるFeイオン濃度は、C
oイオン濃度とFeイオン濃度との比が膜組成を決定す
る大きな要因なので、所望の膜組成が得られるように適
宜決定すればよいが、好ましくは0.001〜5モル/
リットル、より好ましくは0.01〜1モル/リットル
である。The Fe ion concentration in the plating bath is C
Since the ratio of the o ion concentration and the Fe ion concentration is a major factor in determining the film composition, it may be appropriately determined so as to obtain a desired film composition, but preferably 0.001 to 5 mol /
It is 1 liter, more preferably 0.01 to 1 mol / liter.
【0023】めっき浴中におけるCuイオンの濃度も目
的とする組成に応じて適宜決定すればよいが、好ましく
は0.005〜50グラム/リットル、より好ましくは
0.01〜25グラム/リットルである。The concentration of Cu ions in the plating bath may be appropriately determined according to the intended composition, but is preferably 0.005 to 50 g / liter, more preferably 0.01 to 25 g / liter. .
【0024】めっき浴中には、これらのイオンに加え、
安定化剤として有機酸イオンが含まれる。有機酸イオン
としては、コハク酸イオン、クエン酸イオン、マロン酸
イオン、マレイン酸イオン、グルコン酸イオンおよび酒
石酸イオンから選択される少なくとも1種が好ましく、
特に酒石酸イオンが効果的である。酒石酸イオンの供給
源としては、酒石酸、酒石酸ナトリウムカリウム(ロッ
シェル塩)、酒石酸ナトリウム等から適宜選択して用い
ればよい。めっき浴中における有機酸イオンの濃度は、
0.01〜1.0モル/リットルとすることが好まし
い。有機酸イオンの濃度が前記範囲未満であると添加に
よる効果が不十分であり、前記範囲を超えているとめっ
き浴の粘性の上昇や析出速度の低下が生じる他、めっき
浴調合のコストが高くなってしまう。なお、有機酸イオ
ンのモル濃度は、めっき浴中の金属イオンのモル濃度の
0.1〜2倍であることが好ましい。In the plating bath, in addition to these ions,
An organic acid ion is contained as a stabilizer. The organic acid ion is preferably at least one selected from succinate ion, citrate ion, malonate ion, maleate ion, gluconate ion and tartrate ion,
Tartrate ion is particularly effective. The source of the tartrate ion may be appropriately selected and used from tartaric acid, sodium potassium tartrate (Rochelle salt), sodium tartrate and the like. The concentration of organic acid ions in the plating bath is
It is preferably 0.01 to 1.0 mol / liter. If the concentration of the organic acid ion is less than the above range, the effect of addition is insufficient, and if it exceeds the above range, the viscosity of the plating bath increases and the deposition rate decreases, and the cost of preparing the plating bath is high. turn into. The molar concentration of organic acid ions is preferably 0.1 to 2 times the molar concentration of metal ions in the plating bath.
【0025】めっき浴のpHは、好ましくは2.0〜
5.0、より好ましくは2.5〜4.0である。pHが
前記範囲未満であると水素発生が支配的となって成膜速
度が遅くなり、前記範囲を超えると3価鉄の沈殿が特に
生じやすい。The pH of the plating bath is preferably 2.0 to
It is 5.0, and more preferably 2.5 to 4.0. If the pH is less than the above range, hydrogen generation becomes dominant and the film forming rate becomes slow, and if it exceeds the above range, precipitation of trivalent iron is particularly likely to occur.
【0026】なお、めっき浴中には通常用いられる各種
添加剤を添加してもよいが、前述したように本発明では
Clイオンを含有させないことが好ましいので、導電性
向上剤として一般的に使用されている塩化ナトリウムな
どの塩化物は使わないことが好ましい。Although various additives which are usually used may be added to the plating bath, it is preferable that Cl ions are not contained in the present invention as described above. Therefore, it is generally used as a conductivity improver. It is preferable not to use chlorides such as sodium chloride.
【0027】上述しためっき浴を用いた湿式めっき法で
は、電流密度により膜組成は変化する。すなわち、低電
流密度でCo、Feの析出電位未満のときには純Cu膜
が形成され、高電流密度になりCo、Feの析出電位以
上となればCo−Fe−Cu合金が析出する。そして、
電流密度の上昇につれてCo、Feの析出速度が速くな
り、膜中のCu含有量は相対的に低下していく。Cuの
相対的析出比率を一定に保つためには、膜形成が進むに
つれて減少する浴中のイオンを補充する。イオン消費量
が安定していれば補充も容易となる。また、成膜時の電
流密度、すなわち電位を管理することによっても、Cu
の相対的析出比率を一定に保つことができる。この場合
には成膜速度が変化するが、浴管理の手間を省くことが
可能となる。In the wet plating method using the above-mentioned plating bath, the film composition changes depending on the current density. That is, when the current density is low and less than the precipitation potential of Co and Fe, a pure Cu film is formed, and when the current density is high and the precipitation potential of Co and Fe is higher than the precipitation potential, a Co-Fe-Cu alloy is precipitated. And
As the current density increases, the deposition rate of Co and Fe increases, and the Cu content in the film decreases relatively. In order to keep the relative deposition ratio of Cu constant, the ions in the bath that decrease as the film formation proceeds are replenished. If the ion consumption is stable, replenishment becomes easy. In addition, by controlling the current density during film formation, that is, the potential, the Cu
The relative precipitation ratio of can be kept constant. In this case, the film formation rate changes, but the labor of bath management can be saved.
【0028】めっき浴中のFeイオンは2価イオンであ
ることが好ましいが、2価イオンは酸化されて3価イオ
ンとなって沈殿を生じやすい。3価のFeイオンを還元
する方法としては、アスコルビン酸、次亜りん酸あるい
はその塩のような還元剤の添加や、Co、Feの金属を
めっき浴に浸漬し自然溶解する際の副反応を利用する方
法が一般的に知られている。ただし、3価のFeイオン
は少量ならば問題なく、レベリング性等に効果がある場
合もある。なお、沈殿防止のために、EDTAやグルコ
ン酸などのキレート剤を添加することも好ましい。上記
した有機酸イオンは、このような沈殿防止効果も有す
る。The Fe ions in the plating bath are preferably divalent ions, but the divalent ions are easily oxidized to trivalent ions and precipitate. As a method of reducing trivalent Fe ions, addition of a reducing agent such as ascorbic acid, hypophosphorous acid or a salt thereof, or a side reaction when the metals Co and Fe are immersed in a plating bath and naturally dissolved The method of use is generally known. However, if the amount of trivalent Fe ions is small, there is no problem and the leveling property may be effective. It is also preferable to add a chelating agent such as EDTA or gluconic acid to prevent precipitation. The above-mentioned organic acid ion also has such a precipitation preventing effect.
【0029】めっき浴中には、有機光沢剤を含有させて
もよい。有機光沢剤としてはサッカリンが好ましい。添
加量は0.5グラム/リットル以上とすれば十分である
が、使用中の消耗等を考慮して1〜6グラム/リットル
とすることが好ましい。An organic brightener may be contained in the plating bath. Saccharin is preferred as the organic brightener. Although it is sufficient to add 0.5 g / liter or more, it is preferably 1 to 6 g / liter in consideration of consumption during use.
【0030】めっき浴中には、これらの他、ラウリル硫
酸ナトリウム等の界面活性剤など、通常の電気めっき浴
に添加される成分が適宜含有されることが好ましい。In addition to these, it is preferable that the plating bath appropriately contains a component such as a surfactant such as sodium lauryl sulfate added to a usual electroplating bath.
【0031】優れた磁気特性の軟磁性薄膜を得るため
に、連続フィルタリングによりめっき浴中の微粒子や水
酸化物を取り除くことが好ましい。この場合、めっき浴
の容量をVとすると、濾過流量はV×0.11/分間以
上が望ましい。フィルターメッシュは用途に応じて適宜
選択すればよいが、特に微細なレジストパターン内へ成
膜する場合には、0.2μm 以下とすることが好まし
い。In order to obtain a soft magnetic thin film having excellent magnetic properties, it is preferable to remove fine particles and hydroxide in the plating bath by continuous filtering. In this case, when the capacity of the plating bath is V, the filtration flow rate is preferably V × 0.11 / minute or more. The filter mesh may be appropriately selected according to the application, but when forming a film in a fine resist pattern, it is preferably 0.2 μm or less.
【0032】陽極は、微粒子除去の観点からは不溶解性
のTiPt、フェライト電極が好ましい。しかし、陽極
において酸化反応が起こるので、例えばイオン交換膜に
より陰極部と分離することが望ましい。From the viewpoint of removing fine particles, the anode is preferably insoluble TiPt or a ferrite electrode. However, since an oxidation reaction occurs at the anode, it is desirable to separate it from the cathode part by, for example, an ion exchange membrane.
【0033】成膜時の電流密度は、例えば0.01〜5
A/dm2 の範囲で目的に合わせて選択すればよい。直流以
外にもパルス電解や陰極溶解まで行なう交流併用型も可
能である。特にパルス電解において電圧ゼロを含む3種
類以上の複数の電圧を印加することで、Cuの共析量に
大きな差を生じさせて多層膜構造とすることも可能であ
る。この場合、ゼロ電流の際にはCuの置換反応が起こ
り、非磁性のCu膜が成膜されるので、高周波特性の良
好な薄膜が得られる。The current density during film formation is, for example, 0.01 to 5
You can select it according to the purpose within the range of A / dm 2 . In addition to direct current, it is also possible to use an alternating current combined type that performs pulse electrolysis and cathode dissolution. In particular, by applying a plurality of three or more voltages including zero voltage in pulse electrolysis, it is possible to produce a large difference in the co-deposition amount of Cu and form a multilayer film structure. In this case, a substitution reaction of Cu occurs at zero current and a non-magnetic Cu film is formed, so that a thin film having excellent high frequency characteristics can be obtained.
【0034】また、電流密度を連続的に変化させること
により、Cuの含有量が膜の厚さ方向で変化する傾斜構
造とすることも容易にできる。Cu含有量により膜の飽
和磁束密度は変化する。薄膜磁気ヘッドに適用する際
に、ギャップ側を高飽和磁束密度とし反対側を低飽和磁
束密度とすることで、再生時の孤立波形を整えることも
可能である。Further, by changing the current density continuously, it is possible to easily form a graded structure in which the Cu content changes in the film thickness direction. The saturation magnetic flux density of the film changes depending on the Cu content. When applied to a thin film magnetic head, it is also possible to arrange an isolated waveform at the time of reproduction by setting a high saturation magnetic flux density on the gap side and a low saturation magnetic flux density on the opposite side.
【0035】また、外部から印加する電圧を変化させる
のではなく、陰極の近傍にスリットや穴のある遮蔽板を
置き、これを移動することによっても多層化は可能であ
る。この場合、スリット等により局部的に電流密度が集
中した領域と他の低電流密度領域とが異なる組成とな
り、多層膜が得られる。Further, instead of changing the voltage applied from the outside, a shield plate having a slit or a hole is placed near the cathode and the shield plate is moved to achieve the multi-layering. In this case, the region where the current density is locally concentrated due to the slit or the like and the other low current density regions have different compositions, and a multilayer film is obtained.
【0036】多層構造の膜は、高周波特性を向上させる
目的の場合にはそのまま使用するが、熱処理等による拡
散作用を利用して均一組成膜として使用することも可能
である。The film having a multi-layer structure is used as it is for the purpose of improving high frequency characteristics, but it can also be used as a film having a uniform composition by utilizing the diffusion effect by heat treatment or the like.
【0037】めっき浴の溶媒としては、通常の水の他に
非水系溶媒、たとえばメチルアルコール、ジメチルホル
ムアミド、エチルアルコール、プロピレンカーバイド、
溶融塩等も使用可能である。As a solvent for the plating bath, in addition to ordinary water, a non-aqueous solvent such as methyl alcohol, dimethylformamide, ethyl alcohol, propylene carbide,
Molten salt and the like can also be used.
【0038】また、本発明の軟磁性薄膜は、Cr、S
n、Ru、Au、Pd、Ag、Mn、P、B、In、M
o、Pb、Re、W、Zn、Rh、Zr、Pt等から選
択される1種以上の元素を3重量%以下含有すること
で、高周波特性の向上等も期待される。また、これらの
元素を不純物として微量含有することも特に支障は認め
られないので、安価な試薬の使用によるコスト低減も可
能である。ただし、含有量が3重量%を超える場合に
は、磁気特性に悪影響を及ぼしたり飽和磁束密度の低下
を招く場合が多いので注意が必要である。The soft magnetic thin film of the present invention is made of Cr, S
n, Ru, Au, Pd, Ag, Mn, P, B, In, M
By containing 3% by weight or less of one or more kinds of elements selected from O, Pb, Re, W, Zn, Rh, Zr, Pt, etc., improvement of high frequency characteristics is expected. Further, even if a small amount of these elements is contained as an impurity, no particular problem is observed, so that the cost can be reduced by using an inexpensive reagent. However, if the content exceeds 3% by weight, care should be taken as it often adversely affects the magnetic properties or causes a decrease in the saturation magnetic flux density.
【0039】膜に微量含有されるC、Sは、磁気特性に
大きな影響を与えるので注意が必要となる。具体的には
共に500ppm 以下であることが望ましい。Care must be taken because C and S contained in a small amount in the film have a great influence on the magnetic characteristics. Specifically, it is desirable that both are 500 ppm or less.
【0040】本発明の軟磁性薄膜には、目的とする方向
に一軸異方性を付与することが好ましい。一軸異方性付
与の方法としては、磁界中成膜や成膜後の磁界中アニー
ルを用いることができる。磁界中成膜としては、一定の
直流磁界中で成膜する方法が一般的である。しかし、本
発明の軟磁性薄膜では異方性磁界Hkが大きくなりすぎ
ることが多く、高透磁率を得るためにはHkの適正化が
要求される場合も多い。Hkの適正化方法としては直交
磁界中成膜や回転磁界中アニール、あるいは直流磁界中
成膜時と直流磁界中アニール時の磁界方向を面内直交さ
せる等の方法が有効である。直交磁界中成膜は、磁場を
コイルで発生させ交互に電流を印加することで可能であ
る。また、永久磁石を用いる場合には陰極を90°回転
させることで可能となる。アニールの際には飽和磁歪値
が正の方向に増加することが多いので、アニール後の飽
和磁歪値が所望の値となるように成膜を行なうことが好
ましい。薄膜磁気ヘッドのバルクハウゼンノイズを低減
するためには、軟磁性薄膜の飽和磁歪値を小さな負の値
に保つ必要があるとされている。この目的のためには、
成膜時にはやや大きな負の磁歪とし、アニール後に小さ
な負の値となるように設計を行なう。The soft magnetic thin film of the present invention is preferably provided with uniaxial anisotropy in a desired direction. As a method for imparting uniaxial anisotropy, film formation in a magnetic field or magnetic field annealing after film formation can be used. As the film formation in a magnetic field, a method of forming a film in a constant DC magnetic field is generally used. However, in the soft magnetic thin film of the present invention, the anisotropic magnetic field Hk is often too large, and it is often necessary to optimize Hk in order to obtain high magnetic permeability. As a method of optimizing Hk, it is effective to perform film formation in a perpendicular magnetic field, annealing in a rotating magnetic field, or to make the magnetic field directions at the time of film formation in a DC magnetic field and the annealing in a DC magnetic field in-plane orthogonal. Film formation in an orthogonal magnetic field can be performed by generating a magnetic field with a coil and alternately applying a current. When a permanent magnet is used, it is possible to rotate the cathode by 90 °. Since the saturation magnetostriction value often increases in the positive direction during annealing, it is preferable to form the film so that the saturation magnetostriction value after annealing becomes a desired value. In order to reduce the Barkhausen noise of the thin film magnetic head, it is said that it is necessary to keep the saturation magnetostriction value of the soft magnetic thin film at a small negative value. For this purpose,
The film is designed to have a slightly large negative magnetostriction during film formation and a small negative value after annealing.
【0041】本発明の軟磁性薄膜の厚さは、目的に応じ
て適宜決定すればよく、特に制限はないが、低い保磁力
を得るためには、通常、0.5〜10μm 程度とするこ
とが好ましく、また、薄膜磁気ヘッドに適用する場合は
0.5〜4.5μm 程度、薄膜トランスに適用する場合
は3〜7μm 程度とすることが好ましい。The thickness of the soft magnetic thin film of the present invention may be appropriately determined according to the purpose and is not particularly limited, but it is usually about 0.5 to 10 μm in order to obtain a low coercive force. Preferably, the thickness is about 0.5 to 4.5 μm when applied to a thin film magnetic head, and about 3 to 7 μm when applied to a thin film transformer.
【0042】[0042]
【実施例】以下、本発明の具体的実施例を示し、本発明
をさらに詳細に説明する。EXAMPLES The present invention will be described in more detail below by showing specific examples of the present invention.
【0043】<実施例1>10mm×10mm×0.7mm厚
のコーニング7059ガラス上に、スパッタ法によりチ
タンを50A 、さらにパーマロイを500A 成膜した基
板を使用した。めっき前処理として1N−塩酸(常温)
に30秒浸漬し、水洗した後、以下のめっき条件にて軟
磁性薄膜サンプルを成膜した。なお、飽和磁歪値測定用
の試料には、別途0.1mm厚のガラス板に上記基板と同
様の処理を施した基板を使用した。Example 1 A substrate having a thickness of 10 mm × 10 mm × 0.7 mm, Corning 7059 glass, titanium of 50 A and permalloy of 500 A formed by sputtering was used. 1N-hydrochloric acid (normal temperature) as a pretreatment for plating
After immersing in, for 30 seconds and washing with water, a soft magnetic thin film sample was formed under the following plating conditions. As a sample for measuring the saturation magnetostriction value, a glass plate having a thickness of 0.1 mm was subjected to the same treatment as the above-mentioned substrate.
【0044】めっき浴中の基板の周囲には銅板で補助カ
ソードを設けた。陰極全体の形状は3インチの円盤状で
あり、陽極には4インチ径のTiPt板を使用した。攪
拌には断面が三角形のパドルを用い、60回/分間の周
期で陰極から2mmの場所でパドル攪拌を行なった。めっ
き液は下記組成とし、その総量は約7リットルとした。An auxiliary cathode was provided by a copper plate around the substrate in the plating bath. The whole cathode had a disk shape of 3 inches, and a TiPt plate having a diameter of 4 inches was used for the anode. A paddle having a triangular cross section was used for stirring, and paddle stirring was performed at a position 2 mm from the cathode at a cycle of 60 times / minute. The plating solution had the following composition, and the total amount was about 7 liters.
【0045】めっき浴組成(1リットル中) 硫酸コバルト 0.2mol 硫酸鉄(II) 0から0.02mol 硫酸銅 0から3g 硫酸アンモニウム 15g ほう酸 25g サッカリンナトリウム 1g 酒石酸ナトリウムカリウム 0.1mol Plating bath composition (in 1 liter) Cobalt sulfate 0.2 mol Iron (II) sulfate 0 to 0.02 mol Copper sulfate 0 to 3 g Ammonium sulfate 15 g Boric acid 25 g Saccharin sodium 1 g Sodium potassium tartrate 0.1 mol
【0046】めっき浴温度は40℃、めっき浴のpHは
3.7、電流密度は1.5A/dm2 、めっき時間は5分間
とし、600Oeの直流磁界を印加しながら電気めっきを
行ない、厚さ1.2μm の軟磁性薄膜サンプルを得た。The plating bath temperature was 40 ° C., the pH of the plating bath was 3.7, the current density was 1.5 A / dm 2 , the plating time was 5 minutes, and electroplating was performed while applying a DC magnetic field of 600 Oe. A soft magnetic thin film sample having a thickness of 1.2 μm was obtained.
【0047】成膜後、誘導磁気異方性制御を目的とし
て、成膜時の磁化困難軸方向に2kOeの直流磁界を印加
しながら300℃にて1時間の真空中アニールを行なっ
た。After the film formation, for the purpose of controlling the induced magnetic anisotropy, vacuum annealing was performed at 300 ° C. for 1 hour while applying a DC magnetic field of 2 kOe in the direction of the hard axis during film formation.
【0048】得られた各サンプルについて、下記の測定
を行った。The following measurements were performed on each of the obtained samples.
【0049】(組成)蛍光X線分析装置、ICPを用い
て測定した。(Composition) The composition was measured using a fluorescent X-ray analyzer and ICP.
【0050】(保磁力Hc)交流B−Hトレーサーによ
り60Hzにて測定した。(Coercive force Hc) Measured at 60 Hz with an AC BH tracer.
【0051】(飽和磁束密度Bs)VSMにより測定し
た。(Saturation magnetic flux density Bs) Measured by VSM.
【0052】(自然電極電位)基準電極に銀/塩化銀電
極を用い、常温の0.1N−HCl溶液中で測定した。(Natural Electrode Potential) Using a silver / silver chloride electrode as a reference electrode, measurement was carried out in a 0.1N HCl solution at room temperature.
【0053】(飽和磁歪値)光てこ法により3Hz、10
0Oeの磁界中で測定した。(Saturation magnetostriction value) 3 Hz, 10 by optical lever method
It was measured in a magnetic field of 0 Oe.
【0054】(透磁率)8の字コイル法により5MHz 、
3mOe にて測定した。(Permeability) 5 MHz by the figure-eight coil method,
It was measured at 3 mOe.
【0055】(X線回折)Cu−kα線(30kV,40
mA)にて評価した。結晶格子は、格子間隔2.05A を
fcc(111)面、1.98A をbcc(110)面
と同定した。(X-ray diffraction) Cu-kα ray (30 kV, 40
It was evaluated by (mA). Regarding the crystal lattice, a lattice spacing of 2.05A was identified as an fcc (111) plane and 1.98A was identified as a bcc (110) plane.
【0056】(C、S分析)CS計を用いて定量分析を
行った。(C, S analysis) Quantitative analysis was carried out using a CS meter.
【0057】Cu含有量と保磁力との関係を図1に、F
e含有量と保磁力との関係を図2に、Fe含有量と飽和
磁歪値との関係を図3に、Cu含有量と自然電位との関
係を図4に示す。The relationship between the Cu content and the coercive force is shown in FIG.
2 shows the relationship between the e content and the coercive force, FIG. 3 shows the relationship between the Fe content and the saturation magnetostriction value, and FIG. 4 shows the relationship between the Cu content and the spontaneous potential.
【0058】図1に示されるように、特に低い保磁力は
Cu含有量5〜25重量%の範囲で得られている。な
お、Cu含有量が5〜25重量%の範囲であっても保磁
力の高いサンプルが存在するが、これらはFe含有量が
多すぎるために飽和磁歪値が大きいサンプルである。As shown in FIG. 1, a particularly low coercive force is obtained in the Cu content range of 5 to 25% by weight. Although there are samples with high coercive force even when the Cu content is in the range of 5 to 25% by weight, these are samples with a large saturation magnetostriction value because the Fe content is too large.
【0059】また、図2および図3に示されるように、
特に低い保磁力はFe含有量が2〜13重量%の範囲で
得られており、この範囲では飽和磁歪値がゼロ以下とな
っている。なお、図2においてFe含有量が2〜13重
量%の範囲であっても保磁力の高いサンプルが存在する
が、これらはCu含有量が好ましい範囲を外れるサンプ
ルである。Further, as shown in FIGS. 2 and 3,
Particularly low coercive force is obtained in the range of Fe content of 2 to 13% by weight, and the saturation magnetostriction value is zero or less in this range. Although there are samples with high coercive force even when the Fe content is in the range of 2 to 13% by weight in FIG. 2, these are samples in which the Cu content is out of the preferred range.
【0060】また、図4に示されるように、Cuを含有
することにより自然電位がゼロに近づき、耐食性が著し
く改善されることがわかる。Further, as shown in FIG. 4, it can be seen that the inclusion of Cu brings the spontaneous potential close to zero and significantly improves the corrosion resistance.
【0061】なお、Co−10重量%Fe−10重量%
Cu膜のC含有量は410ppm 、S含有量は330ppm
であり、他のサンプルもほぼ同等の値を示した。Co-10% by weight Fe-10% by weight
Cu film has C content of 410ppm, S content of 330ppm
The other samples also showed almost the same value.
【0062】X線回折の結果は、飽和磁歪値の正負によ
り2つに大別された。すなわち飽和磁歪値がゼロ以下の
サンプルでは、図5の上段に示されるようにbcc(1
10)面のピークがほとんど検出されないのに対して、
飽和磁歪値が正のサンプルでは図5の下段に示されるよ
うにbcc(110)面が明瞭に観察された。すなわち
薄膜磁気ヘッドとして好ましい飽和磁歪値が負の膜は、
実質上、fcc(111)の単相であることが判明し
た。The results of the X-ray diffraction were roughly classified into two according to the positive / negative of the saturation magnetostriction value. That is, in the sample having a saturation magnetostriction value of zero or less, as shown in the upper part of FIG.
10) Almost no peaks on the surface are detected, whereas
In the sample having a positive saturation magnetostriction value, the bcc (110) plane was clearly observed as shown in the lower part of FIG. That is, a film having a negative saturation magnetostriction value preferable as a thin film magnetic head is
It was found to be substantially a single phase of fcc (111).
【0063】また、Co−10重量%Fe−10重量%
Cuのサンプルに、真空中で300℃1時間の磁場中ア
ニールを施して誘導磁気異方性を制御し、Hk=8 Oe
としたサンプルでは、透磁率2000(5MHz )が得ら
れた。なお、このサンプルは、アニールの前後ともにf
cc(111)の単相であった。また、飽和磁歪値はア
ニール前は−3.2×10-6であったがアニール後は−
0.9×10-6となっており、好ましい範囲であった。Further, Co-10% by weight Fe-10% by weight
The Cu sample was annealed in a magnetic field at 300 ° C. for 1 hour in vacuum to control the induced magnetic anisotropy, and Hk = 8 Oe
In the sample, the magnetic permeability of 2000 (5 MHz) was obtained. Note that this sample is f before and after annealing.
It was a single phase of cc (111). Further, the saturation magnetostriction value was −3.2 × 10 −6 before annealing, but −− after annealing.
It was 0.9 × 10 −6 , which was a preferable range.
【0064】<実施例2>下記めっき浴を用いて、軟磁
性薄膜サンプルを作製した。Example 2 A soft magnetic thin film sample was prepared using the following plating bath.
【0065】めっき浴組成(1リットル中) スルファミン酸コバルト 0.1mol スルファミン酸鉄 0.008mol スルファミン酸銅 2g スルファミン酸アンモニウム 15g ほう酸 30g サッカリンナトリウム 1g 酒石酸カリウム 0.2mol Plating bath composition (in 1 liter) Cobalt sulfamate 0.1 mol Iron sulfamate 0.008 mol Copper sulfamate 2 g Ammonium sulfamate 15 g Boric acid 30 g Saccharin sodium 1 g Potassium tartrate 0.2 mol
【0066】めっき浴のpHは初期に3.0に設定し、
その後連続して基板に成膜を行なった。The pH of the plating bath was initially set to 3.0,
After that, film formation was continuously performed on the substrate.
【0067】めっき浴温度は45℃、電流密度は1A/dm
2 、めっき時間は10分間とし、200 Oe の直流磁界
を印加して、厚さ1.6μm の軟磁性薄膜サンプルを成
膜した。成膜中のめっき浴は透明であった。Plating bath temperature is 45 ° C., current density is 1 A / dm
2. The plating time was 10 minutes, and a DC magnetic field of 200 Oe was applied to form a soft magnetic thin film sample having a thickness of 1.6 μm. The plating bath during film formation was transparent.
【0068】<比較例1>めっき浴に酒石酸カリウムを
添加しなかった他は実施例2と同様の条件で、サンプル
を作製した。成膜途中からめっき浴は濁り、成膜終了後
にめっき液をめっき浴槽から排出したところ、浴槽の壁
面、底にコロイド状の物質が付着していた。<Comparative Example 1> A sample was prepared under the same conditions as in Example 2 except that potassium tartrate was not added to the plating bath. The plating bath became cloudy during film formation, and when the plating solution was discharged from the plating bath after the film formation was completed, a colloidal substance adhered to the wall and bottom of the bath.
【0069】実施例2および比較例1のそれぞれのサン
プルの保磁力を測定した。結果を図6に示す。図6に示
されるように、酒石酸イオンを含有するめっき浴を用い
た場合には長時間にわたる多数枚の連続成膜でも軟磁性
薄膜の磁気特性が変化しないのに対し、酒石酸イオンを
含有しないめっき浴では、成膜数が増えるに従って軟磁
性薄膜の磁気特性が急激に劣化することが判明した。The coercive force of each sample of Example 2 and Comparative Example 1 was measured. Results are shown in FIG. As shown in FIG. 6, when a plating bath containing tartrate ions is used, the magnetic properties of the soft magnetic thin film do not change even when a large number of films are continuously formed for a long time, whereas plating containing no tartrate ions is used. It was found that in the bath, the magnetic properties of the soft magnetic thin film deteriorate rapidly as the number of films formed increases.
【0070】<実施例3>実施例1のめっき浴において
硫酸鉄を0.02mol 、硫化銅を2.5g に固定し、一
方、めっき浴のpHは2から4.6の範囲で変動させ、
そのつど1回の成膜を行なった。Example 3 In the plating bath of Example 1, iron sulfate was fixed at 0.02 mol and copper sulfide was fixed at 2.5 g, while the pH of the plating bath was varied within the range of 2 to 4.6.
Film formation was performed once each time.
【0071】めっき浴温度は45℃、電流密度は1.5
A/dm2 、めっき時間は20分間とし、600 Oe の直流
磁界を印加した。得られたサンプルの膜厚はpHが低い
ほど薄くなっており、析出効率が低下していることが判
明した。pH3.5以上ではほぼ一定(約5μm )の厚
さが得られた。The plating bath temperature is 45 ° C. and the current density is 1.5.
A / dm 2 , plating time was 20 minutes, and a DC magnetic field of 600 Oe was applied. It was found that the film thickness of the obtained sample became thinner as the pH was lower, and the deposition efficiency was lowered. At a pH of 3.5 or higher, an almost constant thickness (about 5 μm) was obtained.
【0072】<比較例2>硫酸アンモニウムのかわりに
同量の塩化アンモニウムを使用した他は実施例3と同様
にしてめっき浴を調合し、実施例3と同様にしてpHを
変化させて成膜を行なった。Comparative Example 2 A plating bath was prepared in the same manner as in Example 3 except that the same amount of ammonium chloride was used instead of ammonium sulfate, and the pH was changed in the same manner as in Example 3 to form a film. I did.
【0073】実施例3および比較例2それぞれで得られ
たサンプルについて、保磁力を測定した。図7に、めっ
き浴のpHと軟磁性薄膜の保磁力との関係を示す。図7
に示されるように、Clイオンが存在するめっき浴を用
いた比較例2では、低保磁力が得られるpH範囲が狭く
なっていることが明らかである。また、Clイオンが存
在するめっき浴から得られた膜厚2μm 以上のサンプル
は基板との密着性が悪く、部分的に剥離が見られた。こ
れは内部応力が高いためと考えられる。Clイオンを含
まないめっき浴を用いた場合には、このような現像は認
められなかった。The coercive force of each of the samples obtained in Example 3 and Comparative Example 2 was measured. FIG. 7 shows the relationship between the pH of the plating bath and the coercive force of the soft magnetic thin film. Figure 7
As shown in, it is clear that in Comparative Example 2 using the plating bath containing Cl ions, the pH range in which a low coercive force is obtained is narrow. Further, the sample having a film thickness of 2 μm or more obtained from the plating bath containing Cl ions had poor adhesion to the substrate and partial peeling was observed. This is probably because the internal stress is high. No such development was observed when a plating bath containing no Cl ions was used.
【0074】以上の結果から、本発明の効果が明らかで
ある。From the above results, the effect of the present invention is clear.
【図1】軟磁性薄膜のCu含有量と保磁力との関係を示
すグラフである。FIG. 1 is a graph showing a relationship between Cu content and coercive force of a soft magnetic thin film.
【図2】軟磁性薄膜のFe含有量と保磁力との関係を示
すグラフである。FIG. 2 is a graph showing the relationship between the Fe content of a soft magnetic thin film and the coercive force.
【図3】軟磁性薄膜のFe含有量と飽和磁歪値との関係
を示すグラフである。FIG. 3 is a graph showing the relationship between the Fe content of a soft magnetic thin film and the saturation magnetostriction value.
【図4】軟磁性薄膜のCu含有量と自然電位との関係を
示すグラフである。FIG. 4 is a graph showing the relationship between the Cu content of a soft magnetic thin film and the natural potential.
【図5】軟磁性薄膜のX線回折チャートである。FIG. 5 is an X-ray diffraction chart of a soft magnetic thin film.
【図6】軟磁性薄膜の成膜数増加による保磁力変化を示
すグラフである。FIG. 6 is a graph showing changes in coercive force due to an increase in the number of soft magnetic thin films formed.
【図7】めっき浴のpHと軟磁性薄膜の保磁力との関係
を示すグラフである。FIG. 7 is a graph showing the relationship between the pH of the plating bath and the coercive force of the soft magnetic thin film.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成5年5月7日[Submission date] May 7, 1993
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0008[Correction target item name] 0008
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0008】ところで、CoFe合金めっき膜へのCu
の添加が保磁力低下に効果のあることがThe Ele
ctrochemical SocietyのPROC
EEDINGS OF THE SYMPOSIUM
ON MAGNETIC MATERIALS,PRO
CESSES AND DEVICES,91−2,p
579に報告されている。この報告では、0.60eの
保磁力とパーマロイの2倍の飽和磁束密度がFe含有量
10.5重量%のときに得られている。この報告におけ
るCoFeCu合金めっき膜は、fcc相とbcc相と
が混在した構造である。また、保磁力の低い組成範囲は
主としてFeの含有量によって支配され、Feの含有量
が10〜12重量%の狭い範囲でだけ10e以下の保磁
力となっている。一方、Cuに関しては、2重量%以上
含まれれば保磁力が低くなり、Hkの制御のために添加
量を決定することなどが開示されている。By the way, Cu on the CoFe alloy plating film
The effect of the addition of Al is to reduce the coercive force.
PROC of ctrochemical Society
EEDINGS OF THE SYMPOSIUM
ON MAGNETIC MATERIALS, PRO
CESSES AND DEVICES, 91-2, p
579. In this report, a coercive force of 0.60e and a saturation magnetic flux density twice as high as that of permalloy are obtained when the Fe content is 10.5% by weight. The CoFeCu alloy plated film in this report has a structure in which the fcc phase and the bcc phase are mixed. Further, the composition range of low coercive force is mainly controlled by the Fe content, and the coercive force is 10e or less only in the narrow range of the Fe content of 10 to 12% by weight. On the other hand, regarding Cu, the coercive force becomes low when it is contained in an amount of 2% by weight or more, and it is disclosed that the addition amount is determined for controlling Hk.
【手続補正2】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】0055[Correction target item name] 0055
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【0055】(X線回折)Cu−kG線(30kV,4
0mA)にて評価した。結晶構造は(111)面、(2
00)面からfcc、(110)面からbccと同定し
た。(X-ray diffraction) Cu-kG line (30 kV, 4
It was evaluated at 0 mA). The crystal structure is (111) plane, (2
It was identified as fcc from the (00) plane and bcc from the (110) plane.
Claims (10)
磁性薄膜を湿式めっき法を用いて製造する方法であっ
て、Coイオン、FeイオンおよびCuイオンに加え、
有機酸イオンを含むめっき浴を用いることを特徴とする
軟磁性薄膜の製造方法。1. A method for producing a soft magnetic thin film containing Co, Fe and Cu as main components by a wet plating method, which comprises adding Co ions, Fe ions and Cu ions,
A method for producing a soft magnetic thin film, which comprises using a plating bath containing organic acid ions.
エン酸イオン、マロン酸イオン、マレイン酸イオン、グ
ルコン酸イオンおよび酒石酸イオンから選択される少な
くとも1種である請求項1の軟磁性薄膜の製造方法。2. The production of a soft magnetic thin film according to claim 1, wherein the organic acid ion is at least one selected from succinate ion, citrate ion, malonate ion, maleate ion, gluconate ion and tartrate ion. Method.
用いる請求項2の軟磁性薄膜の製造方法。3. The method for producing a soft magnetic thin film according to claim 2, wherein tartrate ions are used as the organic acid ions.
0.01〜1.0モル/リットルである請求項1ないし
3のいずれかの軟磁性薄膜の製造方法。4. The method for producing a soft magnetic thin film according to claim 1, wherein the concentration of the organic acid ions in the plating bath is 0.01 to 1.0 mol / liter.
磁性薄膜を湿式めっき法を用いて製造する方法であっ
て、実質的にClイオンを含有しないめっき浴を用いる
ことを特徴とする軟磁性薄膜の製造方法。5. A method for producing a soft magnetic thin film containing Co, Fe and Cu as main components by a wet plating method, characterized by using a plating bath containing substantially no Cl ions. Method for manufacturing magnetic thin film.
よびCuイオンの供給源として硫酸塩を用いる請求項5
の軟磁性薄膜の製造方法。6. A sulfate is used as a source of Co ions, Fe ions and Cu ions in the plating bath.
Method for manufacturing soft magnetic thin film of.
いずれかに記載のめっき浴を用いる請求項5または6の
軟磁性薄膜の製造方法。7. The method for producing a soft magnetic thin film according to claim 5, wherein the plating bath according to any one of claims 1 to 4 is used as the plating bath.
す請求項1ないし7のいずれかの軟磁性薄膜の製造方
法。8. The method for manufacturing a soft magnetic thin film according to claim 1, wherein annealing is performed in a magnetic field after the soft magnetic thin film is formed.
量が2〜13重量%、残部が実質的にCoであって、請
求項1ないし8のいずれかの製造方法により形成された
ことを特徴とする軟磁性薄膜。9. The method according to claim 1, wherein the Cu content is 4 to 30% by weight, the Fe content is 2 to 13% by weight, and the balance is substantially Co. A soft magnetic thin film characterized by the above.
軟磁性薄膜であって、fcc相から構成され、保磁力が
1 Oe 以下であることを特徴とする軟磁性薄膜。10. A soft magnetic thin film containing Co, Fe and Cu as main components, which is composed of an fcc phase and has a coercive force of 1 Oe or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6088993A JPH06251978A (en) | 1993-02-25 | 1993-02-25 | Soft magnetic thin film and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6088993A JPH06251978A (en) | 1993-02-25 | 1993-02-25 | Soft magnetic thin film and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06251978A true JPH06251978A (en) | 1994-09-09 |
Family
ID=13155382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6088993A Pending JPH06251978A (en) | 1993-02-25 | 1993-02-25 | Soft magnetic thin film and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06251978A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123598A (en) * | 2005-10-28 | 2007-05-17 | Rikogaku Shinkokai | Aqueous solution for forming ferrite film, method for producing ferrite film, and ferrite film |
| US7288333B2 (en) | 2002-09-12 | 2007-10-30 | Alps Electric Co., Ltd. | Magnetic film and thin film magnetic head using this magnetic film |
| JP4710136B2 (en) * | 1999-04-06 | 2011-06-29 | ソニー株式会社 | Method for producing positive electrode active material and method for producing non-aqueous electrolyte secondary battery |
-
1993
- 1993-02-25 JP JP6088993A patent/JPH06251978A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4710136B2 (en) * | 1999-04-06 | 2011-06-29 | ソニー株式会社 | Method for producing positive electrode active material and method for producing non-aqueous electrolyte secondary battery |
| US7288333B2 (en) | 2002-09-12 | 2007-10-30 | Alps Electric Co., Ltd. | Magnetic film and thin film magnetic head using this magnetic film |
| JP2007123598A (en) * | 2005-10-28 | 2007-05-17 | Rikogaku Shinkokai | Aqueous solution for forming ferrite film, method for producing ferrite film, and ferrite film |
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