JPH06274875A - Ni-P plating method for titanium magnetic disk substrate - Google Patents
Ni-P plating method for titanium magnetic disk substrateInfo
- Publication number
- JPH06274875A JPH06274875A JP6215293A JP6215293A JPH06274875A JP H06274875 A JPH06274875 A JP H06274875A JP 6215293 A JP6215293 A JP 6215293A JP 6215293 A JP6215293 A JP 6215293A JP H06274875 A JPH06274875 A JP H06274875A
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- JP
- Japan
- Prior art keywords
- magnetic disk
- titanium
- disk substrate
- plating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
(57)【要約】
【目的】 チタン基板上に形成したNi−Pめっき皮膜
のチタン基板への密着性に優れ、且つその皮膜の表面粗
さが小さいNi−Pめっき皮膜を付与されたチタン製磁
気ディスク基板の製造方法を目的とする。
【構成】 チタン製磁気ディスク基板と陰極材を用意
し、これらを離隔して所定の濃度のフッ素と、塩素、臭
素、ヨウ素のうちから少なくとも一種以上が所定の濃度
の電解水溶液に浸漬し、所定の直流電圧を印加し陽極処
理を行い、続いて上記陽極処理したディスク基板にNi
−P皮膜をめっきする。(57) [Abstract] [Purpose] Made of titanium to which a Ni-P plating film formed on a titanium substrate has excellent adhesion to the titanium substrate and which has a small surface roughness. A method of manufacturing a magnetic disk substrate. [Structure] A magnetic disk substrate made of titanium and a cathode material are prepared, and they are separated from each other and immersed in an electrolytic aqueous solution having a predetermined concentration of at least one of fluorine, chlorine, bromine and iodine having a predetermined concentration, and a predetermined concentration. DC voltage is applied to perform anodization, and then the anodized disk substrate is subjected to Ni.
-Plate P coating.
Description
【0001】[0001]
【産業上の利用分野】この発明は、高密度記録再生用磁
気ディスクとして用いる、チタン製磁気ディスク基板の
Ni−Pめっきの方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ni-P plating method for a titanium magnetic disk substrate used as a magnetic disk for high density recording and reproduction.
【0002】[0002]
【従来の技術】近年、磁気ディスクは高密度記録化が図
られており、そのために素材の薄肉化が試みられてい
る。そこで、新しい技術としてチタンの耐熱性や剛性に
着目し、従来のアルミ磁気ディスク基板の代替材料とし
てチタンを用いることが試みられている。2. Description of the Related Art In recent years, high density recording has been attempted on magnetic disks, and for this purpose, attempts have been made to reduce the material thickness. Therefore, as a new technology, attention has been paid to heat resistance and rigidity of titanium, and it has been attempted to use titanium as a substitute material for the conventional aluminum magnetic disk substrate.
【0003】しかし、磁気ディスク基板としてチタンを
用いた場合、チタン金属表面が多結晶のままであるた
め、記憶媒体として付与された磁性膜に結晶面の差が反
映され、これに起因すると考えられるシグナルエラーが
多発する。この対策として基板表面に非晶質である陽極
酸化皮膜を付与することが有効であることを、本発明者
らは見いだした。However, when titanium is used as the magnetic disk substrate, since the titanium metal surface remains polycrystalline, a difference in crystal plane is reflected in the magnetic film provided as the storage medium, which is considered to be the cause. Many signal errors occur. The present inventors have found that it is effective to provide an amorphous anodic oxide film on the substrate surface as a countermeasure against this.
【0004】この磁気ディスク基板に非晶質である陽極
酸化皮膜を付与し、その後磁性膜を付与するだけでは問
題がある。この理由は、この磁性膜と磁気ヘッドとの吸
着を防止するため陽極酸化皮膜にテクスチャリング加工
(溝加工)を行うが、上記陽極酸化皮膜はこのテクスチ
ャリング加工には不適当であることが明らかになったか
らである。そこで、チタンディスク基板上に1〜10ミ
クロン厚さ程度のNi−Pめっきをし、その後磁性膜を
付与することが望ましい。There is a problem only by applying an amorphous anodic oxide film to the magnetic disk substrate and then applying the magnetic film. The reason for this is that the anodized film is subjected to texturing (grooving) in order to prevent the magnetic film from sticking to the magnetic head, but it is clear that the anodized film is not suitable for this texturing. Because it became. Therefore, it is desirable to perform Ni—P plating on a titanium disk substrate to a thickness of about 1 to 10 μm, and then apply a magnetic film.
【0005】しかし、チタンディスク基板上に直接Ni
−P等のめっきを施すことは困難であることが知られて
いる(例えば表面技術協会第87回講演大会集、199
3年、P179)。However, Ni is directly deposited on the titanium disk substrate.
It is known that it is difficult to apply plating such as -P (for example, 87th Lecture Meeting of the Surface Technology Association, 199).
3 years, P179).
【0006】[0006]
【発明が解決しようとする課題】一般にチタンは大気中
で放置するとその表面に酸化膜を形成する。この酸化膜
を除去せずに公知のNi−P皮膜処理を施した場合、皮
膜が均一に形成されず、表面粗さが悪化する。このた
め、通常はNi−P皮膜処理を施すのに先立ち、化学エ
ッチングにより酸化膜の除去を行う。チタン磁気ディス
ク基板にこの方法を適用し、鏡面研磨加工時に形成され
る酸化物層の除去を行うと、結晶面によりエッチング速
度に差があるため素材の表面粗さが悪化し、その後に形
成するNi−P皮膜の表面粗さは大きい。In general, titanium forms an oxide film on its surface when left in the atmosphere. When the known Ni-P film treatment is performed without removing the oxide film, the film is not uniformly formed and the surface roughness is deteriorated. Therefore, the oxide film is usually removed by chemical etching prior to the Ni-P film treatment. When this method is applied to a titanium magnetic disk substrate and the oxide layer formed during mirror polishing is removed, the surface roughness of the material deteriorates due to the difference in etching rate due to the crystal plane, and the film is then formed. The surface roughness of the Ni-P coating is large.
【0007】チタン製磁気ディスク基板では、Ni−P
皮膜の密着性は重要である。Ni−P皮膜上に磁性膜
(記憶媒体)をスパッタリングにより形成し磁気ディス
クとするわけであるが、化学エッチングにより付与され
たNi−P皮膜ではスパッタリング時に皮膜の剥離が起
こり磁性膜の付与が困難であった。また、磁気ディスク
基板ではNi−P皮膜の表面粗さが問題となる。通常、
磁気ディスク基板と読み取りヘッドの間隔が0.05μ
m程度であるため、磁気ディスク基板の表面粗さを全面
にわたり0.03μm以下とする必要がある。In a titanium magnetic disk substrate, Ni-P
The adhesion of the coating is important. A magnetic film (storage medium) is formed on a Ni-P film by sputtering to form a magnetic disk. However, with a Ni-P film provided by chemical etching, the film peels off during sputtering and it is difficult to apply the magnetic film. Met. Further, in the magnetic disk substrate, the surface roughness of the Ni-P coating becomes a problem. Normal,
The distance between the magnetic disk substrate and the read head is 0.05μ
Since it is about m, the surface roughness of the magnetic disk substrate must be 0.03 μm or less over the entire surface.
【0008】そこで本発明は、チタン製磁気ディスク基
板上に形成されたNi−P皮膜のチタン基板への密着性
に優れ、かつ前記皮膜の表面粗さが小さいNi−Pめっ
き処理方法を目的とする。尚、上記チタン製磁気ディス
ク基板の材質は純チタン材であるが、本発明はチタン合
金の磁気ディスク基板にも応用できる。Therefore, the object of the present invention is to provide a Ni-P plating method which has excellent adhesion of a Ni-P coating formed on a titanium magnetic disk substrate to the titanium substrate and has a small surface roughness of the coating. To do. The material of the titanium magnetic disk substrate is pure titanium material, but the present invention can be applied to a titanium alloy magnetic disk substrate.
【0009】[0009]
【課題を解決するための手段】本発明においては、上記
目的のために特に開発された陽極処理を施し、続いて公
知の方法によりNi−Pめっきを行うことにより、チタ
ン基板への密着性に優れ、かつ前記皮膜の表面粗さが小
さいNi−Pめっき皮膜の生成方法を開発することがで
きた。具体的には、下記の手段を採用する。In the present invention, the adhesion to a titanium substrate is improved by subjecting it to an anodization which has been specially developed for the above purpose, and then performing Ni-P plating by a known method. It was possible to develop a method for producing a Ni-P plated film which is excellent and has a small surface roughness of the film. Specifically, the following means are adopted.
【0010】(1)請求項1の発明は下記の工程を備え
たチタン製磁気ディスク基板のNi−Pめっき方法であ
る。 (a)被処理材であるチタン製磁気ディスク基板と陰極
材を用意する工程と、(b)前記磁気ディスク基板と前
記陰極材を隔離して、フッ素(F) が所定濃度であり、
更に塩素(Cl)、臭素(Br)およびヨウ素(I)の
うちから少なくとも一種以上が所定の濃度である電解水
溶液に浸漬する工程と、(c)前記磁気ディスク基板を
陽極とし、前記陰極材を陰極として所定の直流電圧を印
加し陽極処理を行う工程と、(d)前記陽極処理をした
磁気ディスク基板に、更にNi−P皮膜をめっきする行
程。(1) The invention of claim 1 is a method of Ni-P plating a titanium magnetic disk substrate, which comprises the following steps. (A) a step of preparing a titanium magnetic disk substrate as a material to be treated and a cathode material; (b) separating the magnetic disk substrate and the cathode material so that fluorine (F) has a predetermined concentration,
Furthermore, a step of immersing in an electrolytic aqueous solution in which at least one or more of chlorine (Cl), bromine (Br) and iodine (I) has a predetermined concentration, and (c) the magnetic disk substrate as an anode and the cathode material as A step of applying a predetermined DC voltage as a cathode and performing anodization, and (d) a step of further plating a Ni-P film on the anodized magnetic disk substrate.
【0011】(2)請求項2の発明はフッ素(F)の前
記所定濃度と、塩素(Cl)、臭素(Br)およびヨウ
素(I)のうちから少なくとも一種以上の前記所定濃度
が下記の範囲である請求項1記載のチタン製磁気ディス
ク基板のNi−Pめっき方法である。 F;0.2wt%を超え、10wt%未満であり、 Cl+Br+I;0.1wt%を超え、10wt%未満
である。 (3)請求項3の発明は前記所定の直流電圧が0.3V
から10Vの範囲である請求項1又は請求項2記載のチ
タン製磁気ディスク基板のNi−Pめっき方法である。(2) The invention of claim 2 is such that the predetermined concentration of fluorine (F) and at least one or more of chlorine (Cl), bromine (Br) and iodine (I) fall within the following range. The method of claim 1, wherein the titanium magnetic disk substrate is Ni-P plated. F: more than 0.2 wt% and less than 10 wt% Cl + Br + I; more than 0.1 wt% and less than 10 wt%. (3) In the invention of claim 3, the predetermined DC voltage is 0.3V.
It is the Ni-P plating method of the titanium magnetic disk substrate of Claim 1 or Claim 2 which is in the range of 10V.
【0012】[0012]
【作用】前述の通り本発明においては、本発明のために
特に開発された陽極処理を行い、続いて公知の方法によ
りNi−Pめっきを施す方法を採用する。ここで、従来
公知のNi−Pめっき法とは、無電解または電解により
Ni−P皮膜形成を行うものである。As described above, in the present invention, the method of performing the anodizing treatment especially developed for the present invention and subsequently performing the Ni-P plating by the known method is adopted. Here, the conventionally known Ni-P plating method is a method of forming a Ni-P film electrolessly or electrolytically.
【0013】本発明ではNi−P皮膜形成に先立って行
う陽極処理がNi−P皮膜密着性に大きく寄与してい
る。この処理においてはチタンディスク加工時にその表
面に生成した酸化物層の除去され、これに続くNi−P
めっきで密着性の優れたNi−P皮膜を形成する。In the present invention, the anodizing treatment performed prior to the formation of the Ni-P coating greatly contributes to the adhesion of the Ni-P coating. In this treatment, the oxide layer formed on the surface of the titanium disk during processing is removed, and the Ni-P following this is removed.
A Ni-P film with excellent adhesion is formed by plating.
【0014】陽極処理 本発明では、陽極処理に用いる電解液にフッ素と、塩素
(Cl)、臭素(Br)およびヨウ素(I)のうちから
少なくとも一種以上が含まれることにより、Ni−P皮
膜の密着性に優れかつ素材の表面粗さを損なわないチタ
ン材のNi−Pめっき処理を可能とする。[0014] In anodizing present invention, a fluorine electrolytic solution used in anodizing, chlorine (Cl), by contained bromine (Br) and at least one or more from among iodine (I) is a Ni-P film It enables Ni-P plating treatment of titanium material, which has excellent adhesion and does not impair the surface roughness of the material.
【0015】めっきに先立つ陽極処理においては、自然
酸化膜や研磨加工時に形成する酸化物層の除去される。
チタンディスク基板表面に自然酸化膜や研磨加工時に形
成する酸化物層が存在すると、無電解Ni−Pめっきに
おいてはNi置換反応がほとんど起きないためNi−P
皮膜が得られず、また、電解Ni−Pめっきの場合でも
均一な皮膜は得られない。無電解めっきにおいては、一
般に置換反応速度が大きいと緻密な皮膜が得られず、皮
膜の密着性も悪い。In the anodic treatment prior to plating, the natural oxide film and the oxide layer formed during polishing are removed.
When a natural oxide film or an oxide layer formed during polishing is present on the surface of a titanium disk substrate, Ni substitution reaction hardly occurs in electroless Ni-P plating, so Ni-P
No film can be obtained, and a uniform film cannot be obtained even in the case of electrolytic Ni-P plating. In electroless plating, generally, if the substitution reaction rate is high, a dense film cannot be obtained and the adhesion of the film is poor.
【0016】本発明による陽極処理の効果については十
分に解明されていないが、この陽極処理により、自然酸
化膜や研磨加工時に形成する酸化物層の除去とともに、
均一で、極めて薄い酸化膜が形成され、続くNi−Pめ
っき処理において密着性の良好なめっき皮膜が形成され
ると考えられる。即ち、酸化物層の除去とともに均一な
酸化皮膜が形成される。この酸化皮膜厚さが適切であれ
ばNi置換反応速度が適度に調節され、緻密かつ均一な
Ni−P皮膜が形成されるものと考えられる。Although the effect of the anodizing process according to the present invention has not been fully clarified, this anodizing process removes the natural oxide film and the oxide layer formed during polishing, and
It is considered that a uniform and extremely thin oxide film is formed, and a plating film having good adhesion is formed in the subsequent Ni-P plating treatment. That is, a uniform oxide film is formed with the removal of the oxide layer. It is considered that if the thickness of the oxide film is appropriate, the Ni substitution reaction rate is appropriately adjusted to form a dense and uniform Ni-P film.
【0017】電解液の組成と濃度について:フッ素は自
然酸化膜や研磨加工時に形成する酸化物層の除去には必
須である。また、塩素,臭素,ヨウ素の一種以上を共存
させた電解液を使用して陽極処理を行うと、生成した陽
極酸化皮膜はチタン基板への密着性が優れている。この
陽極処理を行うための最適の電解液の組成を見出すた
め、表2に示す様な種々の電解液によりチタン基板を陽
極処理し、その後Ni−P皮膜をめっきしNi−P皮膜
の密着性と表面状態を調査した。Regarding the composition and concentration of the electrolytic solution: Fluorine is essential for removing the natural oxide film and the oxide layer formed during polishing. Further, when anodizing is performed using an electrolytic solution in which one or more kinds of chlorine, bromine, and iodine coexist, the resulting anodic oxide film has excellent adhesion to the titanium substrate. In order to find the optimum composition of the electrolytic solution for performing this anodizing treatment, the titanium substrate is anodized with various electrolytic solutions as shown in Table 2, and then a Ni-P coating is plated to obtain the adhesion of the Ni-P coating. And the surface condition was investigated.
【0018】その結果、フッ素濃度については、請求項
2の記載した濃度範囲以下では生成皮膜の密着性が望ま
しくなく、この濃度範囲以上では基板が急激にエッチン
グされ表面粗さが著しく悪化する。塩素,臭素,ヨウ素
は少なくとも一種類共存させる必要があり、その総濃度
が本発明の濃度範囲以下では密着性への効果はなく、本
発明の濃度範囲以上では基板表面にピッティングが生
じ、表面粗さが悪化するこたが判明した。As a result, regarding the fluorine concentration, the adhesion of the formed film is not desirable below the concentration range described in claim 2, and above this concentration range, the substrate is abruptly etched and the surface roughness is significantly deteriorated. At least one of chlorine, bromine and iodine must be present together, and if the total concentration is less than the concentration range of the present invention, there is no effect on adhesion, and if the total concentration is more than the concentration range of the present invention, pitting occurs on the substrate surface, It turned out that the roughness deteriorated.
【0019】電圧について:上記陽極処理では、チタン
基板を陽極とし、望ましくは不溶性の電極を陰極とし、
直流電圧を印加して陽極処理を行う。種々検討した結
果、陽極処理電圧を0.3V(ボルト)から10Vの範
囲に設定すれば、密着性の良い望ましいNi−P皮膜が
得られる。また皮膜の表面粗さは基板の表面粗さとほぼ
同じである。Regarding voltage: In the above-mentioned anodization, the titanium substrate is used as an anode, and preferably the insoluble electrode is used as a cathode,
DC voltage is applied to perform anodization. As a result of various studies, if the anodizing voltage is set in the range of 0.3 V (volt) to 10 V, a desirable Ni-P film with good adhesion can be obtained. The surface roughness of the coating is almost the same as the surface roughness of the substrate.
【0020】その他の条件について:電極間距離は、最
大50cmまでは任意に設定できるが、電解槽の大きさ
の制限もあるので、通常5〜10cm程度が望ましい。
通電時間は、チタン基板全面に陽極酸化皮膜を生成させ
ればよいので特に制限はないが、5秒以上が望ましい。
Ni−P皮膜のめっき方法は公知の無電解めっき法で
も、電気めっき法でもよい。皮膜の厚みは1〜10ミク
ロン程度でよい。Regarding other conditions: The distance between the electrodes can be arbitrarily set up to a maximum of 50 cm, but it is usually preferable to be about 5 to 10 cm because the size of the electrolytic cell is limited.
The energization time is not particularly limited as long as the anodic oxide film is formed on the entire surface of the titanium substrate, but is preferably 5 seconds or more.
The Ni-P film may be plated by a known electroless plating method or electroplating method. The thickness of the coating may be about 1-10 microns.
【0021】陰極材は、純チタン、各種のチタン合金、
ステンレス等の不溶性電極でも難溶製の電極でもよい。
また、チタンディスクへの陽極処理及びNi−P皮膜の
めっきは通常基板の両面に対して行う。The cathode material is pure titanium, various titanium alloys,
An insoluble electrode such as stainless steel or an insoluble electrode may be used.
Further, the anodization of the titanium disk and the plating of the Ni-P coating are usually performed on both sides of the substrate.
【0022】[0022]
【実施例】以下に本発明の実施例を述べる。 実施例1 チタン製磁気ディスク基板(直径2.5インチ,板厚
0.6mm)を素材として用いた。陽極処理は、電解液
として0.4wt%臭素水+5wt%NaF+1vol
%HF水溶液を用い、試料を電解液に15秒間浸漬した
のち50秒間電解を行った。試料を陽極、陰極には純チ
タン板を用い、極間距離は3cmとした。電解は電解液
を攪拌することなく直流電圧を印加して行った。次に、
基板から電解液を充分水洗除去した後、無電解法により
Ni−Pめっきを行った。めっき液組成およびめっき条
件は下記のとおりである。評価方法として、表面粗さ試
験(素材のRmaxとNi−Pめっき処理後のRmax
の差)および密着性試験(碁盤目セロテープ剥離試験、
JIS H8602による)を用いた。EXAMPLES Examples of the present invention will be described below. Example 1 A titanium magnetic disk substrate (diameter 2.5 inches, plate thickness 0.6 mm) was used as a material. Anodic treatment is 0.4 wt% bromine water + 5 wt% NaF + 1vol as electrolyte
% HF aqueous solution, the sample was immersed in the electrolytic solution for 15 seconds and then electrolyzed for 50 seconds. The sample was used as the anode and the cathode was a pure titanium plate, and the distance between the electrodes was 3 cm. The electrolysis was performed by applying a DC voltage without stirring the electrolytic solution. next,
After sufficiently removing the electrolytic solution by washing with water from the substrate, Ni-P plating was performed by an electroless method. The composition of the plating solution and the plating conditions are as follows. As an evaluation method, a surface roughness test (Rmax of material and Rmax after Ni-P plating treatment)
Difference) and adhesion test (cross-cut cellophane tape peel test,
JIS H8602) was used.
【0023】無電解Ni−Pめっきの条件は下記の通り
である: めっき液組成: 硫酸ニッケル(NiSO4 ・6H2 O); 30g/l 次亜りん酸ナトリウム(NaH2 PO2 ・H2 O);20g/l 乳酸(CH3 CH(OH)COOH); 30g/l プロピオン酸(CH3 CH2 COOH); 5g/l 鉛; 2mg/l pH;4.5めっき条件 液温;90℃ 処理時間;90分 The conditions of electroless Ni-P plating are as follows:
Is: Plating Solution Composition: nickel sulfate (NiSO 4 · 6H 2 O) ; 30g / l sodium hypophosphite (NaH 2 PO 2 · H 2 O); 20g / l lactic acid (CH 3 CH (OH) COOH ) 30 g / l propionic acid (CH 3 CH 2 COOH); 5 g / l lead; 2 mg / l pH; 4.5 plating condition liquid temperature; 90 ° C. treatment time; 90 minutes
【0024】電解Ni−Pめっきの条件は下記の通りで
ある: めっき電解液組成: 硫酸ニッケル(NiSO4 ・6H2 O); 240g/l 塩化ニッケル (NiCl2 ・6H2 O); 45g/l ほう酸(H3 BO3 ); 30g/l 亜りん酸(H3 PO3 ); 35g/l pH;2めっき条件 陰極;基板、陽極;ニッケル板、極間距離;10cm 電流密度;直流1.5A/dm2 ,電解時間;5分 電解液温;55℃ The conditions for electrolytic Ni-P plating are as follows:
There: Plating electrolyte composition: nickel sulfate (NiSO 4 · 6H 2 O) ; 240g / l nickel chloride (NiCl 2 · 6H 2 O) ; 45g / l boric acid (H 3 BO 3); 30g / l phosphite ( H 3 PO 3 ); 35 g / l pH; 2 plating conditions cathode; substrate, anode; nickel plate, distance between electrodes; 10 cm current density; direct current 1.5 A / dm 2 , electrolysis time; 5 minutes Electrolyte temperature; 55 ° C.
【0025】表1に処理条件および評価結果を示す。一
段目の陽極処理を施すことにより、陽極処理がない場合
より密着性が改善されており、このとき0.3V(ボル
ト)以上10.0V以下の電解電圧を印加すればNi−
P皮膜は全く剥離しない。また、基板の表面粗さも保持
されていることが確認された。Ni−Pめっき方法によ
る差はほとんどみられなかった。Table 1 shows processing conditions and evaluation results. Adhesion is improved by performing the first step of anodizing as compared with the case without anodizing. At this time, if an electrolytic voltage of 0.3 V (volt) or more and 10.0 V or less is applied, Ni-
The P film does not peel off at all. It was also confirmed that the surface roughness of the substrate was maintained. Almost no difference was observed depending on the Ni-P plating method.
【0026】[0026]
【表1】 [Table 1]
【0027】実施例2 チタン製磁気ディスク基板(直径2.5インチ,板厚
0.6mm)を素材として用いた。一段目の陽極処理
は、試料を陽極、陰極には純チタン板を用い、極間距離
は3cmとした。電解は室温下で行い、電解液を攪拌す
ることなく直流電圧を印加し、種々の組成の電解液を用
いた。各イオン濃度は、ナトリウム塩(NaF,NaC
lなど)、カリウム塩、アンモニウム塩および水素塩
(HF,HClなど)の市販試薬により適宜調製した。
試料を電解液に15秒間浸漬したのち4.0Vの電圧を
印加し40秒間電解を行った。次に、基板より電解液を
充分水洗除去した後、電解法によりNi−Pめっきを行
った。めっき液組成およびめっき条件は下記のとおりで
ある。評価方法として、表面粗さ(Rmax)および密
着性(碁盤目セロテープ剥離試験、JIS H8602
による)を用いた。Example 2 A magnetic disk substrate made of titanium (diameter 2.5 inches, plate thickness 0.6 mm) was used as a material. In the first stage anodic treatment, a sample was used as an anode and a pure titanium plate was used as a cathode, and the distance between the electrodes was 3 cm. The electrolysis was performed at room temperature, a DC voltage was applied without stirring the electrolytic solution, and electrolytic solutions having various compositions were used. Each ion concentration is sodium salt (NaF, NaC
1), potassium salt, ammonium salt and hydrogen salt (HF, HCl, etc.) commercially available reagents.
After immersing the sample in the electrolytic solution for 15 seconds, a voltage of 4.0 V was applied and electrolysis was performed for 40 seconds. Next, after sufficiently removing the electrolytic solution by washing with water from the substrate, Ni-P plating was performed by an electrolytic method. The composition of the plating solution and the plating conditions are as follows. As an evaluation method, surface roughness (Rmax) and adhesion (cross-cut cellophane tape peeling test, JIS H8602
) Was used.
【0028】 Ni−Pめっき電解液組成: 硫酸ニッケル(NiSO4 ・6H2 O); 240g/l 塩化ニッケル (NiCl2 ・6H2 O); 45g/l ほう酸(H3 BO3 ); 30g/l 亜りん酸(H3 PO3 ); 35g/l pH;2めっき条件 : 陰極;基板、陽極;ニッケル板、極間距離;10cm 電流密度;直流1.5A/dm2 ,電解時間;5分 電解液温;55℃The Ni-P plating electrolyte composition: nickel sulfate (NiSO 4 · 6H 2 O) ; 240g / l nickel chloride (NiCl 2 · 6H 2 O) ; 45g / l boric acid (H 3 BO 3); 30g / l Phosphorous acid (H 3 PO 3 ); 35 g / l pH; 2 plating conditions : cathode; substrate, anode; nickel plate, distance between electrodes; 10 cm current density; direct current 1.5 A / dm 2 , electrolysis time; 5 minutes electrolysis Liquid temperature; 55 ° C
【0029】表2に処理条件および評価結果を示す。陽
極処理電解液にフッ素と他のハロゲンが共存しない場合
および陽極処理を施さない場合はNi−P皮膜密着性が
悪く、陽極処理を請求項2に記載の電解液の濃度範囲で
施すと密着性が改善されるが、この範囲よりもフッ素ま
たは他のハロゲン濃度が高い場合は表面に荒れやピット
が生じる傾向がみられた。Table 2 shows the processing conditions and the evaluation results. When fluorine and other halogen do not coexist in the anodized electrolyte and when the anodization is not performed, the Ni-P coating adhesion is poor, and when the anodization is performed within the concentration range of the electrolyte described in claim 2, the adhesion is improved. However, when the concentration of fluorine or other halogen is higher than this range, the surface tends to be roughened or pits are formed.
【0030】[0030]
【表2】 [Table 2]
【0031】[0031]
【発明の効果】本発明によれば、Ni−P皮膜の密着性
に優れ、かつ、基板の表面粗さを損なわないNi−Pめ
っき処理されたチタン製磁気ディスク基板の製造が可能
となる。According to the present invention, it is possible to manufacture a Ni-P plated titanium magnetic disk substrate which is excellent in the adhesion of the Ni-P coating and does not impair the surface roughness of the substrate.
フロントページの続き (72)発明者 大村 雅紀 東京都千代田区丸の内一丁目1番2号 日 本鋼管株式会社内Front page continuation (72) Inventor Masaki Omura 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Nihon Steel Pipe Co., Ltd.
Claims (3)
ク基板のNi−Pめっき方法。 (a)被処理材であるチタン製磁気ディスク基板と陰極
材を用意する工程と、(b)前記磁気ディスク基板と前
記陰極材を隔離して、フッ素(F) が所定濃度であり、
更に塩素(Cl)、臭素(Br)およびヨウ素(I)の
うちから少なくとも一種以上が所定の濃度である電解水
溶液に浸漬する工程と、(c)前記磁気ディスク基板を
陽極とし、前記陰極材を陰極として所定の直流電圧を印
加し陽極処理を行う工程と、(d)前記陽極処理をした
磁気ディスク基板に、更にNi−P皮膜をめっきする行
程。1. A Ni—P plating method for a titanium magnetic disk substrate, which comprises the following steps. (A) a step of preparing a titanium magnetic disk substrate as a material to be treated and a cathode material; (b) separating the magnetic disk substrate and the cathode material so that fluorine (F) has a predetermined concentration,
Furthermore, a step of immersing in an electrolytic aqueous solution in which at least one or more of chlorine (Cl), bromine (Br) and iodine (I) has a predetermined concentration, and (c) the magnetic disk substrate as an anode and the cathode material as A step of applying a predetermined DC voltage as a cathode and performing anodization, and (d) a step of further plating a Ni-P film on the anodized magnetic disk substrate.
l)、臭素(Br)およびヨウ素(I)のうちから少な
くとも一種以上の前記所定濃度が下記の範囲である請求
項1記載のチタン製磁気ディスク基板のNi−Pめっき
方法。 F;0.2wt%を超え、10wt%未満であり、 Cl+Br+I;0.1wt%を超え、10wt%未満
である。2. The predetermined concentration of fluorine (F) and chlorine (C)
2. The Ni-P plating method for a titanium magnetic disk substrate according to claim 1, wherein the predetermined concentration of at least one of l), bromine (Br) and iodine (I) is in the following range. F: more than 0.2 wt% and less than 10 wt% Cl + Br + I; more than 0.1 wt% and less than 10 wt%.
Vの範囲である請求項1または請求項2記載のチタン製
磁気ディスク基板のNi−Pめっき方法。3. The predetermined DC voltage ranges from 0.3V to 10V.
The Ni-P plating method for a titanium magnetic disk substrate according to claim 1 or 2, which is in a range of V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6215293A JPH06274875A (en) | 1993-03-22 | 1993-03-22 | Ni-P plating method for titanium magnetic disk substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6215293A JPH06274875A (en) | 1993-03-22 | 1993-03-22 | Ni-P plating method for titanium magnetic disk substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06274875A true JPH06274875A (en) | 1994-09-30 |
Family
ID=13191854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6215293A Pending JPH06274875A (en) | 1993-03-22 | 1993-03-22 | Ni-P plating method for titanium magnetic disk substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06274875A (en) |
-
1993
- 1993-03-22 JP JP6215293A patent/JPH06274875A/en active Pending
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