JPH0629201A - Charged-particle beam lithography apparatus - Google Patents

Abstract

(57) [Summary] [Object] To provide a charged particle beam drawing apparatus capable of irradiating a large area at a time in a batch exposure method. A charged particle beam drawing apparatus for shaping a variable-dimension beam bundle using a first slit and a second slit, wherein the irradiation position of the variable-dimension beam bundle is applied to a correct position on an object to be drawn. To do so. According to the present invention, a beam pattern having an arbitrary shape can be obtained by using a uniform and uniform beam having a high beam current density as a light source.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam drawing apparatus suitable for electron beam exposure, ion beam implantation and the like.

[0002]

2. Description of the Related Art For example, an electron beam exposure method is roughly classified into a one-stroke writing method and a collective exposure method. The latter of these two methods is superior in drawing speed, but requires a mask having an original drawing pattern, that is, a pattern shape to be imaged on an object to be exposed. This pattern is usually quite complex, making it difficult to make masks, difficult to replace,
There are various problems such as the inability to use a figure surrounded by the surroundings.

[0003]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and provides a charged particle beam drawing apparatus which makes use of the feature of being able to irradiate a large area at a time in a batch exposure system. is there.

[0004]

Next, the basic concept of the present invention will be described with reference to FIG. In FIG. 1, an electron beam (11a) is extracted from, for example, an electron beam light source, that is, an electron gun (11) as a charged particle beam generating means. This beam (11a) is on / off controlled by a blanking electrode (not shown), for example. The electron beam (11a), which is controlled by the blanking electrode and has passed through the blanking slit (not shown) in the subsequent stage, passes through the first slit (12a) and the second slit (12b) and then the electron lens (13). ) Forms an image on the object to be drawn as a pattern of a predetermined figure.

[0005]

According to the present invention, the charged particle beam bundle passing through the first slit is irradiated onto the second slit to be shaped,
The object to be drawn is irradiated. At this time, the second slit (12b) may be electrically moved in the X direction and the Y direction, but in the present embodiment, instead of actually moving the second slit, the beam is deflected to be equivalent. To change the relative relationship between the first and second slits. This second slit (12
By the relative movement with the first slit in b), the figure pattern on the object to be drawn can be displayed, for example, in FIGS. 2 (a), (b),
It can be changed appropriately as shown in (c).

[0006]

Next, one embodiment of the present invention will be described in detail with reference to FIG.

In FIG. 3, (31) is an electron gun, and an electron beam (31a) is extracted from this electron gun (31). This beam (31a) is emitted by the first electron lens (33).
As a result, a so-called crossover image of the electron gun (31) is formed with the focal point substantially at the center of the blanking electrodes (34) and (34 '). (35) is a blanking slit, which includes blanking electrodes (34) and (34 ').
When the voltage of the blanking voltage generation circuit (36) connected to is 0 [V], the beam (31a) is passed and
The beam (31a) is cut off at the time of [V]. The beam (31b) that has passed through the blanking slit (35) is a divergent beam, but is converted into a parallel beam as shown in the figure by the second lens (37) which is a condenser lens, and defined as a rectangular shape. The first slit (38) is irradiated. Due to the action of this lens (37), the crossover image of the electron gun (31) is not formed at the position of the first slit (38),
The electron beam is uniformly applied to the entire area of the predetermined slit of the first slit (38). That is, the crossover image of the electron gun (31) is displayed on the first slit (3
8) The first slit (3
8) Since a high energy beam density distribution such as a spot beam generated when the electron gun light source is imaged at the slit (38) is not locally generated in the plane, a uniform and uniform beam can be obtained. Moreover, since the divergent beam is changed into a parallel beam at the position of the first slit (38), a higher beam current density can be obtained than when the divergent beam is used as it is. This first slit (38) is shown by (12) in FIG.
It corresponds in principle to a).

Hereinafter, the light source will be described by considering it as the opening of the first slit (38). That is, although the actual light source is the electron gun (31), for the object to be drawn, the first slit (38) is a uniform light source (virtual light source) with a relatively high beam current density as described above. Become. Here, it should be noted that the way of expressing the luminous flux when the first slit (38) below the first slit (38) is used as the light source is opened at the point connecting the focal point of the virtual light source, The point is that the expression and the expression of are reversed. This is to simplify the drawing. A square image, which is regarded as a rectangular special shape with the first slit (38) as a virtual light source, is formed on the second slit (40) defined by the third lens (39) in a rectangular shape. It is configured to focus the image of the slit. In this case, the crossover image of the electron gun (31) is not formed at the position of the second slit (40), and the third lens (3
9) and the second slit (40). Therefore, a uniform and uniform beam can be obtained at the position of the second slit (40) as well as the position of the first slit (38).

Here, the beam (32a) is directed to the deflection electrode (4).
When the voltage applied to 1), (41 ') and (44), (44') is 0 [V], all of the light is transmitted to form a square in the second slit (40). And the second
The square opening provided in the slit (40), which is regarded as a rectangular special shape here, has a side of 2.56 [mm]. The beam (32a) is also deflected by the deflection electrode (4
1), (41 ') and (44), (44'), 0.01 [m] per 0.1 [V] in the x and y directions, respectively.
m] designed to deflect. Therefore, when a voltage of 25.6 [V] is applied between the deflection electrodes (41) and (41 '), the beam (32a) is all cut off.

Finally, for example, 5 [μm] × 100 [μ
When it is desired to obtain a rectangular figure of [m], a minicomputer (55), which is an electronic computer, writes “5” as width information in the x direction in the first register (42) and y in the second register (45). "100" is written as the width information in the direction. Then, 2 is output to the D-A converter (43).
5.1 [V], the output of the DA converter (46) is 1
A voltage of 5.6 [V] appears. Therefore, only the beam (32b) having a width of 50 [μm] in the x direction and 1 [mm] in the y direction finally passes through the second slit (40). In this state, the third
As is clear from the figure, the contour of the cross section of the electron beam passing through the hole of the first slit (38) at the position of the second slit (40) intersects the contour of the second slit hole at two points. Become. The beam (32b) that has passed through the second slit (40) is moved to 1 by the objective lens (47).
It is reduced to 0: 1 and the virtual light source, that is, the first slit is focused on the flat plate-shaped exposed object (48) as the drawing object. And 5 [μm] × 100 [μ
A rectangular figure (60) having a desired size of [m] is obtained. Here, the beam (32b) is further deflected by the deflection electrode (4b).
9) and (49 '), the rectangular shape is preserved and is deflected in the x direction. And the deflection amount is the minicomputer (5
According to the contents given from 5) to the third register (50), a desired deflection voltage is taken out to the third converter (51). However, it should be noted that the center position of the rectangular shape generated in the second slit (40) depends on the size of the rectangular shape. The correction must be made in relation to the value entered in (42). Of course, here, an uncorrected value is used, and the third DA converter (51) is used.
The output voltage of the first converter (43) may be appropriately added to the output voltage of 1 to correct the voltage in an electric circuit. Similarly, the deflection electrodes (52) and (52 ') deflect the light in the y direction while keeping the rectangular shape. This deflection amount is determined by the fourth register (5
A desired deflection voltage is taken out to the fourth DA converter (54) according to the contents given to 3). As a result, the beam that has passed through the second slit (40) is applied to the correct position on the object to be drawn.

By the way, in the present embodiment, after the internal figure having 256 step angles is drawn, the exposed object (48) is moved to the next step by the control of the minicomputer (55) to draw the next frame. Circuits for this purpose and means such as a motor are omitted in the figure. In addition, the first slit (3
8), in order to suppress the heat generation of the second slit (40) as much as possible, it is possible to additionally water-cool or place a slightly larger slit immediately before each slit. In this way, the original mask is electrically created and predetermined electron beam exposure can be performed while making the best use of the feature of the batch exposure method capable of exposing a large area at a time.

In the above embodiment, the first slit (3
Although the case where the number of openings provided in 8) and the second slit (40) is one has been described, a plurality of openings may be provided in the same manner as in the above embodiment. In the above embodiment, a square is obtained when the voltage applied to the deflection electrodes (41), (41 ') and (44), (44') is 0 [V], but the voltage is 0 [V]. It is also possible that the hour beam (32a) is entirely cut. Further, the electron beam can be replaced with an ion beam, and it is possible to selectively ion-implant only a necessary portion.

[0013]

According to the present invention, a beam pattern having an arbitrary shape can be obtained by using a uniform and uniform beam having a high beam current density as a light source, and the brightness of the formed pattern does not change.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram for explaining a basic concept of the present invention.

FIG. 2 is a schematic diagram showing a figure drawn by FIG.

FIG. 3 is a configuration diagram showing an embodiment according to the present invention.

[Explanation of symbols]

31 ... Electron gun 31a, 31b, 32a, 32b ... Electron beam 33, 37, 39, 47 ... Electron lens 34, 34 ', 41, 41', 44, 44 ', 49, 4
9 ', 52, 52' ... Deflection electrode 35 ... Blanking slit 36 ... Blanking voltage generating circuit 38 ... First slit 40 ... Second slit 48 ... Exposed object 42, 45, 50, 53 ... Register 43 , 46, 51, 54 ... DA converter 55 ... Minicomputer

Claims (1)

[Claims] 1. A charged particle beam generating means for generating a charged particle beam, a control means for storing the shape and size of a drawing figure and an irradiation position, and a blanking means for controlling ON / OFF of the charged particle beam. A first slit for passing the beam as a beam bundle of a predetermined shape; a lens means for irradiating the beam from the charged particle beam generating means onto the first slit; and a space between the first slit and the object to be drawn. A second slit disposed on the first slit and the first slit,
Is provided between the slit and the second slit to generate the focal point of the first slit image on the second slit and to separate the beam crossover from the charged particle beam generating means from the second slit. Between the first slit and the second slit, and the lens that can be tied to the position,
The charged particle beam bundle that has passed through the first slit is deflected so that the irradiation position on the second slit changes in accordance with the binary information from the control means, and a variable size beam bundle is formed. A first deflecting unit, an objective lens for forming an image of the charged particle beam bundle passing through the second slit on the object to be drawn, and a charged particle beam bundle passing through the second slit on the object to be drawn. Second deflecting means for deflecting to a desired position according to the information from the control means, and to the second deflecting means according to the change in the central position of the beam bundle whose dimension is changed by the first deflecting means. A charged particle beam drawing apparatus having means for correcting the applied voltage so that the dimensionally changed beam is irradiated to a correct position on an object to be drawn.