JPH062942B2 - Vacuum deposition equipment - Google Patents
Vacuum deposition equipmentInfo
- Publication number
- JPH062942B2 JPH062942B2 JP58129456A JP12945683A JPH062942B2 JP H062942 B2 JPH062942 B2 JP H062942B2 JP 58129456 A JP58129456 A JP 58129456A JP 12945683 A JP12945683 A JP 12945683A JP H062942 B2 JPH062942 B2 JP H062942B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- vapor deposition
- shutter
- bath
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001771 vacuum deposition Methods 0.000 title description 5
- 238000007740 vapor deposition Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 本発明は、被蒸着板の幅方向の蒸着流速分布の均一化を
図り、しかも流量制御の容易な真空蒸着装置に関するも
のである。Description: TECHNICAL FIELD The present invention relates to a vacuum vapor deposition apparatus that achieves uniform vapor deposition flow velocity distribution in the width direction of a vapor deposition target plate and that can easily control the flow rate.
従来の連続真空蒸着用の槽の形状例を第１図(A)〜(C)に
示す。An example of the shape of a conventional tank for continuous vacuum deposition is shown in FIGS. 1 (A) to (C).
蒸着槽は、溶解した金属の蒸気を真空条件下で湯１から
発生させる浴槽２と、その蒸気を板７まで導くダクト
（チヤンネル）６から構成されている。板７に蒸着する
蒸気流量は浴槽内のヒーター電力とシヤツタ５の開孔面
積で制御している。The vapor deposition tank is composed of a bath 2 that generates molten metal vapor from the hot water 1 under vacuum conditions, and a duct (channel) 6 that guides the vapor to a plate 7. The flow rate of vapor deposited on the plate 7 is controlled by the electric power of the heater in the bath and the opening area of the shutter 5.
チヤンネル６は板が垂直に走るか水平に走るかによつ
て、第１図(A)，(B)に示す垂直ライン、あるいは第１図
(C)に示す水平ラインという形状になつている。なお、
第１図(A)(b)は第１図(A)(a)の斜視図である。Channel 6 depends on whether the plate runs vertically or horizontally, depending on the vertical line shown in Figs. 1 (A) and (B), or Fig. 1
It has the shape of a horizontal line shown in (C). In addition,
FIG. 1 (A) (b) is a perspective view of FIG. 1 (A) (a).
蒸気流量を制御するシヤツタ５は、開孔面積を変えるた
め、バタフライ弁タイプ〔第１図(A)，(C)のシヤツタ〕
あるいはスライド式〔第１図(B)〕のものが使われてい
る。シヤツタの開孔面積の変化はバタフライ弁タイプで
は蝶番形の軸受け３、スライド式ではピニオンラツク式
３のもので操作されている。通常シヤツタ５には蒸気の
凝固を防ぐためのヒーター４が備えつけられている。The shutter 5 for controlling the steam flow rate is a butterfly valve type [shutter of FIG. 1 (A), (C)] to change the opening area.
Alternatively, the slide type [Fig. 1 (B)] is used. The change in the opening area of the shutter is controlled by the hinge type bearing 3 for the butterfly valve type and the pinion rack type 3 for the sliding type. Usually, the shutter 5 is equipped with a heater 4 for preventing vapor coagulation.
従来の蒸着槽では次の理由で蒸気の板幅方向の流速分布
（板に蒸着する金属蒸気の幅方向分布）の制御が難しく
なることが懸念されていた。In the conventional vapor deposition tank, it has been feared that it is difficult to control the flow velocity distribution of the vapor in the plate width direction (the widthwise distribution of the metal vapor deposited on the plate) for the following reason.
バタフライ弁タイプあるいはスライド式のシヤツタ両者
ともに、蒸気の流れは蒸着槽から垂直に流出しその方向
はチヤンネル６内で様々な方向となつている。このため
に、蒸気の整流効果が十分でなく板７の幅方向に蒸着量
の不均一な分布が出やすいことが懸念される。通常、チ
ヤンネル６内での圧力は１０-2Torr〜１０-4Torrと低
く、蒸気の平均自由行程（金属蒸気分子同志が衝突する
平均距離）が長くなるため、チヤンネル６内で整流を行
うためにはチヤンネル６の長さを十分に長くとることが
必要となる。ところが、実際問題としてチヤンネル６の
長さを長くすることは材料、ヒータ取付けのためコスト
高となるため望ましくない。In both the butterfly valve type and the slide type shutters, the vapor flow flows out vertically from the vapor deposition tank and its direction is in various directions in the channel 6. For this reason, there is a concern that the vapor rectification effect is not sufficient and a non-uniform distribution of the vapor deposition amount is likely to occur in the width direction of the plate 7. Normally, the pressure in the channel 6 is as low as 10 -2 Torr to 10 -4 Torr, and the mean free path of vapor (the average distance that metal vapor molecules collide) becomes long, so rectification is performed in the channel 6. Therefore, it is necessary to make the length of the channel 6 sufficiently long. However, as a practical matter, it is not desirable to increase the length of the channel 6 because the cost is increased due to the attachment of the material and the heater.
本発明は、従来の真空蒸着用の槽において、板の幅方向
の蒸気流速分布の均一化--チヤンネル内の短い距離で整
流を行う--の改善を計ることを目的としてなされたもの
である。The present invention has been made for the purpose of improving the uniformity of the vapor flow velocity distribution in the width direction of the plate in the conventional vacuum vapor deposition tank--performing rectification at a short distance within the channel. .
ところで、上述の従来の真空蒸着用の槽では上面８から
の蒸気の拡がり、あるいは縮少が影響して膜厚分布の不
均一を生じることが考えられる。例えば第２図(A)に示
すように蒸着槽の上面８の開孔ａが板７の幅ｗより小さ
い場合（ａ＜ｗ）には板７の両端部の膜厚が薄くなり、
一方第２図(B)に示すように逆の場合〔上面８の開孔ａ
が板幅ｗより大きい場合（ａ＞ｗ）〕には板７の両端の
膜厚が厚くなることが懸念される。By the way, in the above-mentioned conventional vacuum deposition tank, it is conceivable that the spread or reduction of the vapor from the upper surface 8 affects the film thickness distribution. For example, as shown in FIG. 2 (A), when the opening a in the upper surface 8 of the vapor deposition tank is smaller than the width w of the plate 7 (a <w), the film thickness at both ends of the plate 7 becomes thin,
On the other hand, as shown in FIG. 2 (B), the reverse case [opening a on the upper surface 8
Is larger than the plate width w (a> w)], the film thickness at both ends of the plate 7 may be increased.
そこで、本発明では、蒸着用蒸気の流量を調節し、か
つ、被蒸着基材の板幅に応じた、十分に整流された蒸気
を供給可能とすることにより、被蒸着基材の板幅方向に
均一な膜厚の蒸着膜を形成することができる真空蒸着装
置を提供しようとするものである。Therefore, in the present invention, by adjusting the flow rate of vapor for vapor deposition, and depending on the plate width of the vapor deposition base material, it is possible to supply sufficiently rectified vapor, so that It is intended to provide a vacuum vapor deposition apparatus capable of forming a vapor deposition film having a uniform film thickness.
即ち、本発明は、溶解金属を収容する浴槽と、該浴槽の
上方に設けた蒸気流量調節用シャッタと、該浴槽からの
蒸気を被蒸着基材に向けて誘導するチャンネルとを有す
る真空蒸着装置において、上記シャッタの開口幅位置に
ほぼ沿った平行な一対のガイドを立設し、該ガイドの被
蒸着基材側の先端に駆動軸を立設し、該駆動軸の可変ガ
イドを後端を固定し、可変ガイドの先端を開閉可能とし
たことを特徴とする真空蒸着装置である。That is, the present invention is a vacuum vapor deposition apparatus having a bath for containing molten metal, a vapor flow rate adjusting shutter provided above the bath, and a channel for guiding vapor from the bath toward a substrate to be vapor-deposited. In the above, a pair of parallel guides extending substantially along the opening width position of the shutter is erected, a drive shaft is erected at the tip of the guide on the side of the vapor deposition base material, and a variable guide of the drive shaft is provided at the rear end. This is a vacuum vapor deposition device characterized in that it is fixed and the tip of the variable guide can be opened and closed.
第３図(A)，(B)は本発明装置の一実施態様例を示す図
で、第３図(A)は断面図、第３図(B)は平面図である。3 (A) and 3 (B) are views showing an embodiment of the device of the present invention, FIG. 3 (A) is a sectional view, and FIG. 3 (B) is a plan view.
第３図(A)，(B)において、蒸発は従来と同じく浴槽２の
湯１の表面から起こる。浴槽２の上面８は従来の通りと
なつている。本発明は、シャッタ５の開口幅位置にほぼ
沿った平行な一対のガイド９を立設し、該ガイド９の被
蒸着基材７側の先端に駆動軸１０ａを立設し、該駆動軸
１０ａの可変ガイド１０の後端を固定し、可変ガイド１
０の先端を開閉可能とすることにより、被蒸着基材７の
板幅に対して蒸気を均一に流すことを可能にしたもので
ある。蒸気流量を制御するためにバタフライ弁式シヤツ
タ５、該シヤツタ５への蒸気付着防止のためのヒータ４
及びシヤツタの駆動機構３が従来通りに設置されてい
る。第３図に示すチヤンネル６は従来と同じ形状であ
り、垂直ラインに対するものとなつている。従つて、蒸
気はチヤンネル出口１１を通り、板７に蒸着されること
になる。可変ガイド１０及びシヤツタ５の駆動軸１０ａ
および３ａは、手動又は適宜手段により回動される。In FIGS. 3 (A) and (B), evaporation occurs from the surface of the hot water 1 in the bath 2 as in the conventional case. The upper surface 8 of the bath 2 is conventional. According to the present invention, a pair of parallel guides 9 are provided upright substantially along the opening width position of the shutter 5, and a drive shaft 10a is provided upright at the tip of the guide 9 on the vapor deposition substrate 7 side. The variable guide 10 is fixed by fixing the rear end of the variable guide 1.
By opening and closing the tip of No. 0, the vapor can be made to flow uniformly with respect to the plate width of the deposition target substrate 7. A butterfly valve type shutter 5 for controlling the flow rate of steam, and a heater 4 for preventing steam from adhering to the shutter 5.
And the drive mechanism 3 of the shutter is installed as usual. The channel 6 shown in FIG. 3 has the same shape as the conventional one, and is for a vertical line. Therefore, the vapor passes through the channel outlet 11 and is deposited on the plate 7. Variable guide 10 and drive shaft 10a of the shutter 5
And 3a are rotated manually or by appropriate means.
上記のように構成される本発明装置においては、次の作
用がある。The device of the present invention configured as described above has the following effects.
ダクトのガイド９と可変ガイド１０を浴槽２の上面８に
設けているために、蒸気の流れは第４図に示すようにす
ることができる。すなわち、第４図において、ガイド内
での上記分子のお互いの衝突の頻度が多くなり、蒸気の
流れの均一化を計る作用をもたらすことが可能となつて
いる。また、蒸気の出口の幅を板７の幅と同じくするこ
とができ、チヤンネル内の圧力が１０-2〜１０-4なので
ガイド通過後の流れは均一化したままに保つことができ
る。Since the duct guide 9 and the variable guide 10 are provided on the upper surface 8 of the bath 2, the flow of steam can be set as shown in FIG. That is, in FIG. 4, the frequency of collision of the molecules with each other in the guide increases, and it is possible to bring about the effect of making the flow of vapor uniform. Further, the width of the steam outlet can be made the same as the width of the plate 7, and since the pressure in the channel is 10 -2 to 10 -4 , the flow after passing through the guide can be kept uniform.
一方、従来の蒸着槽であれば、例えば第１図(A)に示す
シヤツタを用いると、開度が小さい場合には本発明に同
じ効果が期待できるが、シヤツタ開度を大きくすると蒸
気の流れはランダムな方向に流れ、時にシヤツタの両サ
イドからもれる蒸気量が増えてチヤンネル出口方向でも
整流されないまま板に蒸着することになり、膜厚の幅方
向に不均一な分布ができる恐れがある。On the other hand, in the case of a conventional vapor deposition tank, for example, when the shutter shown in FIG. 1 (A) is used, the same effect can be expected in the present invention when the opening is small, but when the opening of the shutter is increased, the steam flow Flow in random directions, and the amount of vapor leaked from both sides of the shutter increases at times, causing vapor to be deposited on the plate without being rectified even in the channel exit direction, which may result in non-uniform distribution in the width direction of the film thickness. .
以上詳述したように、本発明の主旨は、浴槽出口にガイ
ドを設けその幅方向を調整できるようにした点にある。
従つて、この主旨に外れない機構、例えば流量制御用シ
ヤツタをスライド式としたもの等も考えられる。As described above in detail, the gist of the present invention is that a guide is provided at the outlet of the bath so that the width direction thereof can be adjusted.
Therefore, a mechanism that does not deviate from this purpose, such as a slide type flow rate controlling shutter, is conceivable.
第３図の真空蒸着装置を用いて、亜鉛の真空蒸着を行っ
た。蒸着槽上面の開孔は幅が１０００ｍｍ、流さが５０
０ｍｍの長方形であり、チャンは高さが１５００ｍｍ、
幅が２０００ｍｍ、奥行き３０００ｍｍであり、ガイド
は高さが７００ｍｍ、長さが１３００ｍｍの２枚の板で
上記開孔を含むように平行に立設され、可変ガイドの高
さは上記ガイドと同じ７００ｍｍで、幅が５００ｍｍの
２枚の板からなり、駆動軸で回転することにより可変ガ
イドの開度を調節する。この真空蒸着装置は、板幅が６
００〜１３００ｍｍの範囲の基材に対して均一な膜厚の
亜鉛蒸着膜を形成できることがわかった。Vacuum deposition of zinc was performed using the vacuum deposition apparatus shown in FIG. The opening on the top of the vapor deposition tank has a width of 1000 mm and a flow of 50
It is a rectangle of 0 mm, and the height of Chang is 1500 mm,
The width is 2000 mm, the depth is 3000 mm, the guide is 700 mm high, and the length is 1300 mm, and the two guides are installed upright in parallel so as to include the holes. The height of the variable guide is the same as 700 mm. Then, it is composed of two plates with a width of 500 mm, and the opening of the variable guide is adjusted by rotating the drive shaft. This vacuum vapor deposition device has a plate width of 6
It was found that a zinc vapor-deposited film having a uniform thickness can be formed on a base material in the range of 00 to 1300 mm.
第１図(A)〜(C)は従来装置を示す図、第２図(A)，(B)は
第１図(A)〜(C)に示す装置の欠点を説明するための平面
模式図、第３図(A)，(B)は本発明装置の一実施態様例を
示す図、第４図は第３図に示す装置の作用効果を説明す
るための図である。1 (A) to (C) are views showing a conventional device, and FIGS. 2 (A) and 2 (B) are schematic plan views for explaining defects of the device shown in FIGS. 1 (A) to (C). FIGS. 3 (A) and 3 (B) are views showing an embodiment of the device of the present invention, and FIG. 4 is a view for explaining the action and effect of the device shown in FIG.
フロントページの続き (72)発明者 和気 完治 広島県広島市西区観音新町四丁目６番22号 三菱重工業株式会社広島造船所内 (72)発明者 古川 平三郎 広島県広島市西区観音新町四丁目６番22号 三菱重工業株式会社広島造船所内 (72)発明者 伊藤 武彦 大阪府堺市石津西町５番地 日新製鋼株式 会社阪神研究所内 (72)発明者 愛甲 琢哉 大阪府堺市石津西町５番地 日新製鋼株式 会社阪神研究所内 (56)参考文献 特開 昭58−100675（ＪＰ，Ａ) 特開 昭57−155369（ＪＰ，Ａ) 特開 昭57−174458（ＪＰ，Ａ) 特開 昭47−8055（ＪＰ，Ａ)Front page continuation (72) Kanji Wake Kanji 4-6-22 Kannon-shinmachi, Nishi-ku, Hiroshima-shi, Hiroshima Mitsubishi Heavy Industries, Ltd. Hiroshima Shipyard (72) Inventor Heisaburo Furukawa 4-chome, Kannon-shin-cho, Nishi-ku, Hiroshima-shi, Hiroshima No. 22 Mitsubishi Heavy Industries, Ltd. Hiroshima Shipyard (72) Inventor Takehiko Ito 5 Ishizu Nishimachi, Sakai City, Osaka Prefecture Nisshin Steel Co., Ltd.Hanshin Research Institute (72) Inventor Takuya Aiko 5 Ishizu Nishimachi, Sakai City, Osaka Prefecture Nisshin Steel (56) References JP 58-100675 (JP, A) JP 57-155369 (JP, A) JP 57-174458 (JP, A) JP 47-8055 ( JP, A)
Claims (1)
に設けた蒸気流量調節用シャッタと、該浴槽からの蒸気
を被蒸着基材に向けて誘導するチャンネルとを有する真
空蒸着装置において、上記シャッタの開口幅位置にほぼ
沿った平行な一対のガイドを立設し、該ガイドの被蒸着
基材側の先端に駆動軸を立設し、該駆動軸の可変ガイド
の後端を固定し、可変ガイドの先端を開閉可能としたこ
とを特徴とする真空蒸着装置。1. A vacuum vapor deposition apparatus having a bath for containing molten metal, a vapor flow rate adjusting shutter provided above the bath, and a channel for guiding vapor from the bath toward a substrate to be vapor-deposited. , A pair of parallel guides are provided upright substantially along the opening width position of the shutter, a drive shaft is provided upright at the tip of the guide on the side of the vapor deposition base material, and the rear end of the variable guide of the drive shaft is fixed. In addition, the vacuum vapor deposition device is characterized in that the tip of the variable guide can be opened and closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129456A JPH062942B2 (en) | 1983-07-18 | 1983-07-18 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58129456A JPH062942B2 (en) | 1983-07-18 | 1983-07-18 | Vacuum deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6021379A JPS6021379A (en) | 1985-02-02 |
| JPH062942B2 true JPH062942B2 (en) | 1994-01-12 |
Family
ID=15009931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58129456A Expired - Lifetime JPH062942B2 (en) | 1983-07-18 | 1983-07-18 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062942B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0635656B2 (en) * | 1986-10-03 | 1994-05-11 | 三菱重工業株式会社 | Vacuum deposition equipment |
| JPH0735567B2 (en) * | 1987-02-05 | 1995-04-19 | 三菱重工業株式会社 | Continuous vacuum deposition equipment |
| US8628617B2 (en) * | 2008-12-03 | 2014-01-14 | First Solar, Inc. | System and method for top-down material deposition |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57155369A (en) * | 1981-03-20 | 1982-09-25 | Fuji Photo Film Co Ltd | High vacuum ion plating method and apparatus |
| JPS57174458A (en) * | 1981-04-22 | 1982-10-27 | Mitsubishi Heavy Ind Ltd | Construction of vessel for evaporating source |
| JPS58100675A (en) * | 1981-12-11 | 1983-06-15 | Mitsubishi Heavy Ind Ltd | Method and device for continuous vapor deposition |
-
1983
- 1983-07-18 JP JP58129456A patent/JPH062942B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6021379A (en) | 1985-02-02 |
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