JPH06321371A - Separating method and device for wafer - Google Patents
Separating method and device for waferInfo
- Publication number
- JPH06321371A JPH06321371A JP11261893A JP11261893A JPH06321371A JP H06321371 A JPH06321371 A JP H06321371A JP 11261893 A JP11261893 A JP 11261893A JP 11261893 A JP11261893 A JP 11261893A JP H06321371 A JPH06321371 A JP H06321371A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafers
- uppermost
- close contact
- laminated body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 235000012431 wafers Nutrition 0.000 claims abstract description 103
- 230000002093 peripheral effect Effects 0.000 claims abstract description 13
- 238000000926 separation method Methods 0.000 abstract description 3
- 238000005452 bending Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Sheets, Magazines, And Separation Thereof (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はウェーハの分離方法及び
装置に関し、詳しくは、半導体装置の製造に使用され、
多数の薄板状ウェーハを密着状態で積み重ねた積層体か
ら、ウェーハを分離して順次一枚ずつ切り出す分離方法
及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for separating a wafer, and more particularly, it is used for manufacturing a semiconductor device,
The present invention relates to a separation method and apparatus for separating wafers from a laminated body in which a large number of thin plate-shaped wafers are stacked in close contact and sequentially cutting the wafers one by one.
【0002】[0002]
【従来の技術】半導体装置の製造では、シリコン単結晶
のインゴットをスライスして薄板状ウェーハを形成し、
その上で、多数の薄板状ウェーハを密着状態で積み重ね
た積層体から、ウェーハを分離して順次一枚ずつ切り出
し、後工程へ供給するようにしている。2. Description of the Related Art In the manufacture of semiconductor devices, a silicon single crystal ingot is sliced to form a thin plate wafer,
Then, the wafers are separated from the stacked body in which a large number of thin plate-shaped wafers are stacked in close contact with each other, and the wafers are sequentially cut out one by one and supplied to the subsequent process.
【0003】このウェーハの分離は、図3に示すように
多数の薄板状ウェーハ(1)を密着状態で積み重ねた積
層体(2)を用意し、その積層体(2)の最上層のウェー
ハ(1)から行なわれる。この時、ウェーハ(1)はその
処理面が下向きとなっている。従来は、最上層のウェー
ハ(1)とその下のウェーハ(1)との間に、図中矢印で
示すように作業者が側方からナイフエッジやピンセット
を挿入することにより、その最上層のウェーハ(1)を
強制的に引き剥がすように分離して順次一枚ずつ切り出
していた。As shown in FIG. 3, the wafer is separated by preparing a laminated body (2) in which a large number of thin plate-shaped wafers (1) are stacked in close contact with each other, and the uppermost wafer of the laminated body (2) ( It is done from 1). At this time, the processing surface of the wafer (1) faces downward. Conventionally, an operator inserts a knife edge or tweezers from the side between the uppermost wafer (1) and the lower wafer (1) as shown by the arrow in the figure, so that the uppermost wafer (1) The wafer (1) was separated so that it was forcibly peeled off and cut out one by one.
【0004】[0004]
【発明が解決しようとする課題】ところで、上述したウ
ェーハ(1)の表面は非常に平滑な状態であり、これら
ウェーハ(1)を積み重ねた場合、各ウェーハ(1)は強
固に密着した状態となっている。従って、従来のように
作業者が手でナイフエッジやピンセットをウェーハ
(1)間に挿入するだけでウェーハ(1)を引き剥がすこ
とは非常に困難で、無理をすればウェーハ(1)が傷つ
いたり欠けたりすることが多く、このような手作業では
熟練を要し、時間がかかって作業効率が悪いという問題
があった。By the way, the surface of the above-mentioned wafer (1) is in a very smooth state, and when these wafers (1) are stacked, each wafer (1) is firmly adhered to each other. Has become. Therefore, it is very difficult for an operator to peel the wafer (1) by inserting the knife edge or tweezers between the wafers (1) by hand as in the past, and the wafer (1) will be damaged if forced. There is a problem that such manual work requires skill, takes time, and is inefficient in work.
【0005】そこで、本発明は上記問題点に鑑みて提案
されたもので、その目的とするところは、多数のウェー
ハを密着状態で積み重ねた積層体からのウェーハの分離
を自動化することにある。Therefore, the present invention has been proposed in view of the above problems, and an object thereof is to automate the separation of wafers from a laminated body in which a large number of wafers are stacked in a close contact state.
【0006】[0006]
【課題を解決するための手段】上記目的を達成するため
の技術的手段として、本発明方法は、多数の薄板状ウェ
ーハを密着状態で積み重ねた積層体から、最上層のウェ
ーハを分離して順次一枚ずつ切り出すに際し、最上層の
ウェーハの周縁部をその上方から吸着して局所的に微小
量だけ撓ませるようにしたことを特徴とする。尚、上記
方法において、最上層のウェーハを吸着して局所的に微
小量だけ撓ませた後、そのウェーハと残りの積層体との
間に形成された間隙に向けてエアブローすることが望ま
しい。As a technical means for achieving the above object, the method of the present invention is to sequentially separate the uppermost wafer from a laminated body in which a large number of thin plate-shaped wafers are stacked in close contact with each other. When cutting out one by one, the peripheral edge of the uppermost wafer is adsorbed from above and locally deflected by a minute amount. In the above method, it is preferable that the uppermost wafer is sucked and locally deflected by a small amount, and then air blown toward the gap formed between the wafer and the remaining stacked body.
【0007】また、本発明装置は、多数の薄板状ウェー
ハを密着状態で積み重ねた積層体から、最上層のウェー
ハを分離して順次一枚ずつ切り出すものにおいて、最上
層のウェーハの周縁部をその上方から吸着して局所的に
微小量だけ撓ませる吸着パッドを有することを特徴とす
る。尚、上記吸着パッドとして、ウェーハのほぼ全面を
吸着する凸曲面状の吸着面を具備したものも可能であ
る。Further, in the apparatus of the present invention, the uppermost wafer is separated and sequentially cut out one by one from the laminated body in which a large number of thin plate-shaped wafers are stacked in close contact with each other. It is characterized in that it has an adsorption pad that is adsorbed from above and locally deflected by a minute amount. It is also possible to use, as the suction pad, a suction surface having a convex curved surface that sucks almost the entire surface of the wafer.
【0008】[0008]
【作用】本発明では、最上層のウェーハの周縁部をその
上方から吸着して局所的に微小量だけ撓ませることによ
り、その下に位置するウェーハとの間に間隙を形成し、
その間隙から上下のウェーハ間に空気が入り込むことに
よって密着状態が開放されて最上層のウェーハを容易に
分離できる。In the present invention, the peripheral edge of the uppermost wafer is adsorbed from above and locally deflected by a minute amount to form a gap between the wafer and the wafer below it.
When air enters between the upper and lower wafers through the gap, the close contact state is released and the uppermost wafer can be easily separated.
【0009】[0009]
【実施例】本発明に係るウェーハの分離方法及び装置の
実施例を図1及び図2に示して説明する。尚、図3と同
一部分には同一参照符号を付して重複説明は省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a wafer separating method and apparatus according to the present invention will be described with reference to FIGS. The same parts as those in FIG. 3 are designated by the same reference numerals, and the duplicated description will be omitted.
【0010】本発明の特徴は、多数の薄板状ウェーハ
(1)を密着状態で積み重ねた積層体(2)から、最上層
のウェーハ(1)を分離して順次一枚ずつ切り出すに際
し、最上層のウェーハ(1)の周縁部をその上方から吸
着して局所的に微小量だけ撓ませるようにしたことにあ
る。The feature of the present invention is that the uppermost wafer (1) is separated from the laminated body (2) in which a large number of thin plate-shaped wafers (1) are stacked in close contact with each other, and the uppermost wafer (1) is sequentially cut out one by one. The peripheral edge of the wafer (1) is sucked from above and locally deflected by a minute amount.
【0011】具体的には、まず、図1(a)に示すよう
にウェーハ(1)の積層体(2)の上方に、所定間隔だけ
離隔した二個の吸着パッド(3a)(3b)を上下動自在に
配置し、両吸着パッド(3a)(3b)で最上層のウェーハ
(1)の周縁部二ヶ所を真空吸着する。ここで、そのま
まの状態でウェーハ(1)を吸着パッド(3a)(3b)で
持ち上げようとすると、ウェーハ(1)が密着状態にあ
るために最上層のウェーハ(1)のみを分離することが
困難である。Specifically, first, as shown in FIG. 1A, two suction pads (3a) (3b) separated by a predetermined distance are provided above the stacked body (2) of the wafer (1). The upper and lower wafers (1) are vacuum-sucked by the suction pads (3a) and (3b) so that they are vertically movable. Here, if the wafer (1) is attempted to be lifted by the suction pads (3a) and (3b) as it is, only the uppermost wafer (1) can be separated because the wafer (1) is in a close contact state. Have difficulty.
【0012】そこで、図1(b)に示すように一方の吸
着パッド(3a)を微小量上昇させると共に傾倒させるこ
とにより、その吸着パッド(3a)で保持されたウェーハ
(1)の周縁部を撓ませる。ここで、ウェーハ(1)の撓
み量としては、例えば、350μm厚の3インチのウェ
ーハ(1)で、その周縁部を2mm程度持ち上げるだけ
で分離可能である。Therefore, as shown in FIG. 1B, one suction pad (3a) is slightly raised and tilted so that the peripheral portion of the wafer (1) held by the suction pad (3a) is moved. Bend. Here, as the bending amount of the wafer (1), for example, a 3-inch wafer (1) having a thickness of 350 μm can be separated only by raising its peripheral portion by about 2 mm.
【0013】これによってその箇所で、最上層のウェー
ハ(1)とその下に位置するウェーハ(1)との間に間隙
(m)が形成され、その間隙(m)から上下のウェーハ
(1)間に空気が入り込み、その密着状態が開放され
る。その結果、図1(c)に示すように両方の吸着パッ
ド(3a)(3b)を上昇させることにより、最上層のウェ
ーハ(1)のみを分離して一枚だけ確実に切り出すこと
ができる。As a result, a gap (m) is formed between the uppermost wafer (1) and the lower wafer (1) at that position, and the wafers (1) above and below the gap (m) are formed. Air enters between them and the close contact is released. As a result, by raising both suction pads (3a) and (3b) as shown in FIG. 1 (c), only the uppermost wafer (1) can be separated and only one wafer can be reliably cut out.
【0014】尚、上述した実施例では、二個の吸着パッ
ド(3a)(3b)を使用し、そのうちの一方の吸着パッド
(3a)でウェーハ(1)を撓ませ、その後、両方の吸着
パッド(3a)(3b)でウェーハ(1)を上昇させて分離
するようにしたが、他方の吸着パッド(3b)はウェーハ
(1)を撓ませることに関与しないため、この吸着パッ
ド(3b)の代わりに、単なる押えパッドを使用し、ウェ
ーハ(1)を撓ませた後は、その押えパッドによる押え
を解除した上で、一方の吸着パッド(3a)のみで上昇さ
せて分離するようにしてもよい。このようにウェーハ
(1)が軽量であるため、一つの吸着パッド(3a)のみ
での保持も可能である。In the above-described embodiment, two suction pads (3a) and (3b) are used, one of the suction pads (3a) bends the wafer (1), and then both suction pads (3a) and (3b) are bent. Although the wafer (1) is lifted and separated in (3a) and (3b), the other suction pad (3b) does not participate in bending the wafer (1), so that the suction pad (3b) Instead, use a simple holding pad, and after bending the wafer (1), release the holding by the holding pad and then raise only one suction pad (3a) to separate. Good. Since the wafer (1) is thus lightweight, it can be held by only one suction pad (3a).
【0015】また、本発明は上記実施例に限定されるこ
となく、例えば、図2に示すような一つの吸着パッド
(4)を使用することも可能である。この吸着パッド
(4)は、凸曲面状〔例えば、円筒曲面状〕の吸着面
(5)を有する表面多孔のスポンジ状部材からなる。Further, the present invention is not limited to the above embodiment, and it is possible to use, for example, one suction pad (4) as shown in FIG. The suction pad (4) is made of a sponge-like member having a surface having a convex curved surface (for example, a cylindrical curved surface) and having a suction surface (5).
【0016】この吸着パッド(4)を利用する場合、図
2(a)に示すように吸着パッド(4)を一方向に傾倒
させた状態で、その吸着面(5)の一部を積層体(2)の
最上層のウェーハ(1)の周縁部に当接させることによ
り、ウェーハ(1)のその箇所を吸着保持し、更に、吸
着パッド(4)を傾倒方向とは逆方向に傾動させ、図2
(b)に示すように吸着パッド(4)を水平姿勢状態に
する。これにより、吸着パッド(4)の吸着面(5)の一
部に吸着された最上層のウェーハ(1)の周縁部が撓む
ことになり、前述の実施例と同様、その下に位置するウ
ェーハ(1)との間に間隙(m)が形成され、その間隙
(m)から上下のウェーハ(1)間に空気が入り込んで密
着状態が開放される。その後、図2(c)に示すように
吸着パッド(4)を更に同一方向に傾動させれば、その
吸着面(5)の全面に沿って最上層のウェーハ(1)のみ
が吸着されて分離し、一枚だけ確実に切り出すことがで
きる。ここで、ウェーハ(1)は吸着パッド(4)の吸着
面(5)に沿って撓んだ状態となるが、この程度の撓み
はウェーハ(1)自体に悪影響を及ぼすことはない。When this suction pad (4) is used, as shown in FIG. 2 (a), the suction pad (4) is tilted in one direction and a part of the suction surface (5) is laminated. By abutting against the peripheral edge of the uppermost wafer (1) of (2), that portion of the wafer (1) is adsorbed and held, and the adsorption pad (4) is tilted in the direction opposite to the tilting direction. , Fig. 2
As shown in (b), the suction pad (4) is placed in a horizontal posture. As a result, the peripheral portion of the uppermost wafer (1) sucked by a part of the suction surface (5) of the suction pad (4) is bent, and is positioned below the peripheral edge portion as in the above-described embodiments. A gap (m) is formed between the wafer (1) and air is introduced from the gap (m) between the upper and lower wafers (1) to release the close contact state. Then, as shown in FIG. 2C, when the suction pad (4) is further tilted in the same direction, only the uppermost wafer (1) is sucked and separated along the entire suction surface (5). However, only one piece can be cut out surely. Here, the wafer (1) is bent along the suction surface (5) of the suction pad (4), but such a degree of bending does not adversely affect the wafer (1) itself.
【0017】尚、図1(b)及び図2(b)に示す状
態、即ち、最上層のウェーハ(1)の周縁部を撓ませ
て、その下に位置するウェーハ(1)との間に間隙(m)
を形成した時点で、その間隙(m)に向けてエアブロー
すれば、最上層のウェーハ(1)とその下のウェーハ
(1)との密着状態を開放することがより一層確実とな
る。The state shown in FIGS. 1 (b) and 2 (b), that is, the peripheral portion of the uppermost wafer (1) is bent so that the wafer (1) positioned below the wafer (1) is bent. Gap (m)
When the air is blown toward the gap (m) at the time of forming, the contact state between the uppermost wafer (1) and the lower wafer (1) is further surely released.
【0018】[0018]
【発明の効果】本発明によれば、多数の薄板状ウェーハ
を密着状態で積み重ねた積層体から、ウェーハを傷つけ
ることなく順次一枚ずつ確実に分離して切り出すことが
でき、安定したウェーハ分離作業の自動化を実現できる
と共に、作業時間の短縮化が図れてインデックスが大幅
に向上する。EFFECTS OF THE INVENTION According to the present invention, it is possible to reliably separate and cut wafers one by one without damaging the wafers from a stacked body in which a large number of thin plate-shaped wafers are stacked in close contact with each other. Not only can you realize the automation of, but also the work time can be shortened and the index can be greatly improved.
【図1】本発明に係るウェーハの分離方法及び装置の一
実施例を示す説明図FIG. 1 is an explanatory view showing an embodiment of a wafer separating method and apparatus according to the present invention.
【図2】本発明の他の実施例を示す説明図FIG. 2 is an explanatory diagram showing another embodiment of the present invention.
【図3】従来のウェーハの分離方法及び装置を示す説明
図FIG. 3 is an explanatory view showing a conventional wafer separating method and apparatus.
1 ウェーハ 2 積層体 3a、3b 吸着パッド 4 吸着パッド 5 吸着面 m 間隙 1 Wafer 2 Laminate 3a, 3b Suction pad 4 Suction pad 5 Suction surface m Gap
Claims (4)
重ねた積層体から、最上層のウェーハを分離して順次一
枚ずつ切り出すに際し、最上層のウェーハの周縁部をそ
の上方から吸着して局所的に微小量だけ撓ませるように
したことを特徴とするウェーハの分離方法。1. When separating the uppermost wafer from a laminated body in which a large number of thin plate-shaped wafers are stacked in close contact and sequentially cutting out the wafers one by one, the peripheral edge of the uppermost wafer is adsorbed from above and locally. A method for separating a wafer, which is characterized in that it is flexed by a very small amount.
小量だけ撓ませた後、そのウェーハと残りの積層体との
間に形成された間隙に向けてエアブローするようにした
ことを特徴とする請求項1記載のウェーハの分離方法。2. The uppermost wafer is sucked and locally deflected by a small amount, and then air blown toward a gap formed between the wafer and the remaining laminated body. The method for separating a wafer according to claim 1.
重ねた積層体から、最上層のウェーハを分離して順次一
枚ずつ切り出すものにおいて、最上層のウェーハの周縁
部をその上方から吸着して局所的に微小量だけ撓ませる
吸着パッドを有することを特徴とするウェーハの分離装
置。3. A laminate in which a large number of thin plate-shaped wafers are stacked in close contact with each other, and the uppermost wafer is separated and sequentially cut out one by one, and the peripheral edge of the uppermost wafer is adsorbed from above. A wafer separating apparatus having a suction pad that locally bends a small amount.
のほぼ全面を吸着する凸曲面状の吸着面を具備したこと
を特徴とするウェーハの分離装置。4. The wafer separating apparatus according to claim 3, wherein the suction pad has a convex curved suction surface for sucking substantially the entire surface of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11261893A JPH06321371A (en) | 1993-05-14 | 1993-05-14 | Separating method and device for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11261893A JPH06321371A (en) | 1993-05-14 | 1993-05-14 | Separating method and device for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06321371A true JPH06321371A (en) | 1994-11-22 |
Family
ID=14591246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11261893A Pending JPH06321371A (en) | 1993-05-14 | 1993-05-14 | Separating method and device for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06321371A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007161354A (en) * | 2005-12-09 | 2007-06-28 | Dainippon Printing Co Ltd | Unpacking system and unpacking method |
| JP2011054665A (en) * | 2009-08-31 | 2011-03-17 | Rozefu Technol:Kk | Method and device for separating and conveying wafer |
| JP2011124481A (en) * | 2009-12-14 | 2011-06-23 | Mimasu Semiconductor Industry Co Ltd | Method and device for isolation of submerged wafer |
-
1993
- 1993-05-14 JP JP11261893A patent/JPH06321371A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007161354A (en) * | 2005-12-09 | 2007-06-28 | Dainippon Printing Co Ltd | Unpacking system and unpacking method |
| JP2011054665A (en) * | 2009-08-31 | 2011-03-17 | Rozefu Technol:Kk | Method and device for separating and conveying wafer |
| JP2011124481A (en) * | 2009-12-14 | 2011-06-23 | Mimasu Semiconductor Industry Co Ltd | Method and device for isolation of submerged wafer |
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