JPH0632340B2 - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPH0632340B2 JPH0632340B2 JP2245285A JP2245285A JPH0632340B2 JP H0632340 B2 JPH0632340 B2 JP H0632340B2 JP 2245285 A JP2245285 A JP 2245285A JP 2245285 A JP2245285 A JP 2245285A JP H0632340 B2 JPH0632340 B2 JP H0632340B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- strained
- active layer
- lattice constant
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000010410 layer Substances 0.000 claims description 128
- 239000002356 single layer Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は光通信や情報処理等で使用される半導体発光素
子に関する。TECHNICAL FIELD The present invention relates to a semiconductor light emitting device used in optical communication, information processing and the like.
（従来技術とその問題点） ＩnＰやＧaＡs又はこれらの多元混晶を用いた発光素子
としては、半導体レーザ、発光ダイオードがある。これ
ら発光素子の基本構造は、ｎ型およびｐ型クラッド層が
これらクラッド層よりエネルギーギャップの小さい活性
層を挾み込んだダブルヘテロ構造である。ところが近
年、活性層とクラッド層との間の伝導帯下端のエネルギ
ー不連続量が発光素子の発光温度特性や特に半導体レー
ザの発振閾値電流密度に影響を与えることが分ってき
た。この対策として、活性層とクラッド層との間にクラ
ッド層よりエネルギーギャップが大きい半導体層を挿入
することが提案された。他方、格子定数の異なる２つの
半導体層を交互に配した歪超格子や格子定数の異なるヘ
テロエピタキシーの研究も進められている。クラッド層
に比べエネルギーギャップが大きく、格子定数の異なる
歪超薄膜を有した化合物半導体発光素子も特願昭５７−
１０４７５６のように提案されている。(Prior Art and Problems Thereof) There are semiconductor lasers and light emitting diodes as light emitting devices using InP, GaAs, or multi-element mixed crystals thereof. The basic structure of these light emitting devices is a double hetero structure in which the n-type and p-type clad layers sandwich an active layer having a smaller energy gap than these clad layers. However, in recent years, it has been found that the amount of energy discontinuity at the lower end of the conduction band between the active layer and the cladding layer affects the emission temperature characteristics of the light emitting device and particularly the oscillation threshold current density of the semiconductor laser. As a countermeasure against this, it has been proposed to insert a semiconductor layer having an energy gap larger than that of the cladding layer between the active layer and the cladding layer. On the other hand, research on strained superlattices in which two semiconductor layers having different lattice constants are alternately arranged and heteroepitaxy having different lattice constants are also underway. A compound semiconductor light emitting device having a strained ultrathin film having a larger energy gap and a different lattice constant than the clad layer is also disclosed in Japanese Patent Application No.
Proposed as 104756.
第２図は従来の歪超薄膜を有する発光素子の断面模式図
である。図において、１１，１５はそれぞれｎ型および
ｐ型クラッド層、２１，２２はそれぞれクラッド層より
エネルギーギャップが大きく、格子定数が小さい歪超薄
膜、１４は活性層である。従来の歪超薄膜２１，２２
は、活性層１４に隣接して配置されており、ｎ型クラッ
ド層１１に注入された電子は、歪超薄膜（半導体層）２
１の低いエネルギーバリアを越え、活性層１４に注入さ
れる。ところが活性層１４に注入された電子は歪超薄膜
２２の高いバリアのため、ｐ型クラッド層１５に到達で
きない。他方、同時にｐ型クラッド層１５に注入された
正孔も逆方向に注入され、活性層１４に注入される。こ
の活性層１４に注入される。この活性層１４に注入され
たキャリアは、活性層１４にとどまり、有効に発光に寄
与する。ところが、従来の歪超薄膜（２１，２２）を有
する発光素子では、歪超薄膜の歪が活性層１４に及ぶた
め、キャリアの注入効率の上昇に比べ発光強度があまり
改善されない上、素子の寿命が短く、高温動作時は熱に
よる歪が加わり、発光特性が低下するという問題があっ
た。FIG. 2 is a schematic sectional view of a light emitting device having a conventional strained ultrathin film. In the figure, 11 and 15 are n-type and p-type clad layers, 21 and 22 are strained ultrathin films having a larger energy gap and a smaller lattice constant than the clad layers, and 14 is an active layer. Conventional strained ultra-thin films 21, 22
Are disposed adjacent to the active layer 14, and electrons injected into the n-type cladding layer 11 are strained ultra thin film (semiconductor layer) 2
Implanted in the active layer 14 over the low energy barrier of 1. However, the electrons injected into the active layer 14 cannot reach the p-type cladding layer 15 because of the high barrier of the strained ultrathin film 22. On the other hand, at the same time, the holes injected into the p-type cladding layer 15 are also injected in the opposite direction and injected into the active layer 14. It is injected into this active layer 14. The carriers injected into the active layer 14 remain in the active layer 14 and effectively contribute to light emission. However, in the light emitting device having the conventional strained ultrathin film (21, 22), the strain of the strained ultrathin film extends to the active layer 14, so that the emission intensity is not improved so much as the carrier injection efficiency is increased and the life of the device is shortened. However, there is a problem in that the light emission characteristics are deteriorated due to the distortion due to heat added at the time of high temperature operation.
（発明の目的） 本発明の目的は、このような問題を解決し、キャリア注
入効率が高く、低電流動作、高温動作に優れた半導体発
光素子を提供することにある。(Object of the Invention) An object of the present invention is to solve such problems and to provide a semiconductor light emitting device having high carrier injection efficiency and excellent in low current operation and high temperature operation.
（発明の構成） 本発明の構成は、発光領域となる単層あるいは多層の活
性層が、この活性層に比べエネルギーギャップの大きい
クラッド層で挾み込まれた構造の半導体発光素子におい
て、前記クラッド層よりエネルギーギャップが大きくか
つ格子定数が小さい第１の歪超薄膜と前記クラッド層よ
り格子定数が大きい第２の歪超薄膜とを交互に積層した
歪超格子層を、前記クラッド層と前記活性層の間の少な
くとも一方に有することを特徴とし、前記格子定数の異
なる層を交互に積層した歪超格子層の膜厚で平均化した
格子定数が、活性層の格子定数の０．９９５から１．０
０５倍の範囲にあるものが好ましい。(Structure of the Invention) The structure of the present invention is a semiconductor light-emitting device having a structure in which a single-layer or multi-layer active layer serving as a light-emitting region is sandwiched by a clad layer having a larger energy gap than the active layer. A strained superlattice layer in which a first strained ultrathin film having a larger energy gap and a smaller lattice constant than a layer and a second strained ultrathin film having a larger lattice constant than the clad layer are alternately laminated, It is characterized by having at least one of the layers, and the lattice constant averaged by the film thickness of the strained superlattice layer in which the layers having different lattice constants are alternately laminated is 0.995 to 1 of the lattice constant of the active layer. .0
Those in the range of 05 times are preferable.
（発明の作用） 半導体レーザは、一般に格子歪により導入される欠陥を
嫌うために格子整合系で製作されるが、ｎ側クラッド層
から注入された電子が活性層を超えてｐ側クラッド層に
到達し、同様にｐ側クラッド層から注入された正孔が活
性層を超えてｎ側クラッド層に到達する、いわゆるキャ
リアオーバフロー現象が存在する。このキャリアオーバ
フロー現象はレーザ発光に寄与しない電流であるため、
半導体レーザの発振閾値電流や温度特性に悪影響を与え
る。(Operation of the Invention) A semiconductor laser is generally manufactured in a lattice-matching system in order to dislike defects introduced by lattice strain. However, electrons injected from the n-side cladding layer exceed the active layer and enter the p-side cladding layer. There is a so-called carrier overflow phenomenon in which holes that have arrived and similarly injected from the p-side cladding layer reach the n-side cladding layer beyond the active layer. Since this carrier overflow phenomenon is a current that does not contribute to laser emission,
This adversely affects the oscillation threshold current and temperature characteristics of the semiconductor laser.
そこで本発明では、活性層の両側あるいは一方に、クラ
ッド層よりバンドギャップの大きな半導体層を挿入する
ことによりこの問題を解決している。つまり格子整合系
ではレーザ特性に限界があるが、さらに特性の優れたレ
ーザを得るには、必然的にクラッド層とは異なる材料
系、つまりバンドギャップが大きくかつ格子不整合系の
材料を用いることになる。本発明では、さらにその格子
不整合系の材料を用いることにより生ずる歪による欠陥
の発生を除去するために、格子定数が異なる半導体から
なる歪超格子を用いている。つまり、歪超格子の平均の
格子定数をクラッド層や活性層の格子定数に近づけるこ
とにより、半導体レーザ全体としては格子整合系にして
いる。従って通常の超格子でなく歪超格子が必要とな
る。Therefore, the present invention solves this problem by inserting a semiconductor layer having a bandgap larger than that of the clad layer on both sides or one side of the active layer. In other words, laser characteristics are limited in the lattice matching system, but in order to obtain a laser with better characteristics, it is inevitable to use a material system different from that of the cladding layer, that is, a material with a large band gap and a lattice mismatch system. become. Further, in the present invention, a strained superlattice made of semiconductors having different lattice constants is used in order to eliminate the occurrence of defects due to strain caused by using the lattice mismatching material. That is, the average lattice constant of the strained superlattice is brought close to the lattice constants of the cladding layer and the active layer, so that the semiconductor laser as a whole has a lattice matching system. Therefore, a strained superlattice is required instead of a normal superlattice.
本発明の構成によれば、クラッド層よりエネルギーギャ
ッブの大きい歪超薄膜層をこのクラッド層と活性層との
間に配置することにより、キャリアの漏れ電流を防止す
る機能は失わず、かつその歪超薄膜層を格子定数の長い
層と短い層とを交互に積層することにより、歪を積層さ
れた歪超格子層に集中させ、歪がクラッド層や活性層に
及ばないようにした。このため得られた素子の内部歪は
緩和され、素子の寿命、温度特性が改善される。また、
格子定数の長い層と短い層とを交互に積層した歪超格子
層の膜厚で平均化した格子定数が活性層の格子定数の
０．９９５から１．００５倍の範囲（格子整合度±０．
５％以内）にすることにより、素子の結晶成長も容易と
なり歪が活性層に及ばなくなり、活性層の発光強度も上
昇するという効果がある。According to the configuration of the present invention, by disposing the strained ultra-thin film layer having a larger energy gab than the cladding layer between the cladding layer and the active layer, the function of preventing carrier leakage current is not lost, and The strained ultra-thin film layer was formed by alternately laminating layers having long lattice constants and layers having short lattice constants, so that strain was concentrated in the laminated strained superlattice layers so that strain did not reach the clad layer and the active layer. Therefore, the internal strain of the obtained element is relaxed, and the life and temperature characteristics of the element are improved. Also,
The lattice constant averaged by the film thickness of the strained superlattice layer in which layers having a long lattice constant and layers having a short lattice constant are alternately laminated is in the range of 0.995 to 1.005 times the lattice constant of the active layer (the degree of lattice matching ± 0. ．
Within 5%), the crystal growth of the device is facilitated, the strain does not reach the active layer, and the emission intensity of the active layer is increased.
（実施例） 次に図面により本発明を詳細に説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の素子の断面模式図である。
本実施例の構造は、ｎ型クラッド層１１，ｐ型クラッド
層１５にそれぞれＳドープＩn0.48Ｇa0.52Ｐ層、Ｚｎド
ープＩn0.48Ｇa0.52Ｐ層を、活性層１４にＩn0.21Ｇa
0.79Ａs0.57Ｐ0.43層を、クラッド層よりエネルギーギ
ャップが大きく格子定数が小さい第１の歪超薄膜１２に
ＧaＰ層、クラッド層より格子定数の小さい第２の歪超
薄膜１３にＩnＰ層を用いて構成される。ＧaＰ層１２と
ＩnＰ層１３との膜厚は、それぞれ２５Åと２０Åと
し、各層数はそれぞれ３層と２層とした。このような構
成のため活性層１４にある電子は歪超格子層のＧa層１
２のエネルギーバリアをトンネルすることが出来ず、エ
ネルギーバリアとして働く。又、ＩnＰ層１３を２０Å
とすることにより、ＩnＰ層１３での量子化された電子
準位は、ＧaＰ層１２バリア導電帯下端のすぐ下に位置
するため、ｎ側クラッド層１１にある電子はＩnＰ層１
３にトラップされずに容易に通過する。FIG. 1 is a schematic sectional view of an element according to an embodiment of the present invention.
In the structure of this embodiment, the n-type cladding layer 11 and the p-type cladding layer 15 are S-doped In 0.48 Ga 0.52 P layer and Zn-doped In 0.48 Ga 0.52 P layer, respectively, and the active layer 14 is In 0.21 Ga.
A 0.79 As 0.57 P 0.43 layer is used as a GaP layer for the first strained ultrathin film 12 having a larger energy gap and a smaller lattice constant than the cladding layer, and an InP layer for a second strained ultrathin film 13 having a smaller lattice constant than the cladding layer. Composed. The film thicknesses of the GaP layer 12 and the InP layer 13 were 25 Å and 20 Å, respectively, and the number of each layer was 3 and 2 layers, respectively. Due to this structure, the electrons in the active layer 14 are the Ga layer 1 of the strained superlattice layer.
The energy barrier of 2 cannot be tunneled and works as an energy barrier. Also, the InP layer 13 is set to 20 Å
As a result, the quantized electron level in the InP layer 13 is located immediately below the lower end of the barrier conduction band of the GaP layer 12, so that the electrons in the n-side cladding layer 11 are
Passes easily without being trapped in 3.
本実施例と従来の歪超薄膜とを有する発光素子とを製作
してストライプ電極型半導体レーザとして比較した。従
来の歪超薄膜とを有する発光素子は、本実施例と同様な
クラッド層と活性層とから構成され、歪超薄膜として４
０オングストロームのＧａＰ層をｎ側クラッド層と活性
層との間およびｐ型クラッド層と活性層との間にそれぞ
れ配置し、さらにストライプ電極構造としては、２０μ
ｍ幅の開口部を設けたＳｉＯ２マスクを用いてクラッド
層にＺｎを拡散した後、ＡｕＺｎ電極ストライプ構造に
している。この場合の測定は、いずれもパルス幅２００
ｎｓｅｃ、繰返し周期１０μｓｅｃのパルス、で行っ
た。A light emitting device having this example and a conventional strained ultrathin film was manufactured and compared as a stripe electrode type semiconductor laser. A conventional light emitting device having a strained ultrathin film is composed of a clad layer and an active layer similar to those of the present embodiment, and is 4
A GaP layer of 0 angstrom is arranged between the n-side clad layer and the active layer and between the p-type clad layer and the active layer, and the stripe electrode structure has a thickness of 20 μm.
Zn is diffused into the clad layer using an SiO 2 mask provided with an opening of m width, and then an AuZn electrode stripe structure is formed. In this case, the pulse width is 200
nsec, a pulse having a repetition period of 10 μsec.
本実施例のレーザは、従来例に比べて外部微分量子効率
に優れ、室温における同一駆動電流（２５０ｍＡ）にお
いて従来例のレーザでは３ｍＷに対し、本実施例では
９．５ｍＷと約３倍の光出力が得られた。また最高発振
温度では従来のレーザが６０℃に対し、本実施例が１０
０℃と４０℃も優れていた。さらに５０℃，５ｍＷの自
動出力制御動作（ＡＰＣ）寿命試験を行った結果、従来
のレーザの寿命が４０〜１２０時間であったに対し、本
実施例のレーザでは、測定した全ての素子で６００時間
を超え、１０００時間を超えても安定動作するものもあ
り、劣化率が１桁以上も改善され長寿命が確認された。The laser of the present example is superior to the conventional example in external differential quantum efficiency, and at the same drive current (250 mA) at room temperature, the laser of the conventional example has 3 mW, whereas the laser of this example has 9.5 mW, which is about three times as much light. Output was obtained. At the maximum oscillation temperature, the conventional laser has a temperature of 60 ° C.
0 ° C and 40 ° C were also excellent. Further, as a result of performing an automatic power control operation (APC) life test at 50 ° C. and 5 mW, the life of the conventional laser was 40 to 120 hours, whereas in the laser of this example, all the measured elements were 600. Some of them operate stably for more than 1000 hours, and the deterioration rate is improved by one digit or more, and long life is confirmed.
又、第１の歪超薄膜１２と第２の歪超薄膜１３との各膜
厚を変えて素子を製作し、その素子の歪超格子層の膜厚
で平均化した格子定数と活性層のフォトルミネッセンス
強度（ＰＬ強度）の関係を調べた。その結果、歪超格子
層の平均の格子定数が活性層１４のそれと差が大きくな
る程、ＰＬ強度は減少することが分った。しかし、歪超
格子層の平均定数が活性層のそれの０．９９５〜１．０
０５倍の範囲内ではＰＬ強度がほぼ一定であり、この範
囲内であれば強い発光強度の素子が得られ、さらにこの
範囲内では再現性よく素子が得られ、素子製作上有利と
なることが確認できた。Further, an element is manufactured by changing the film thickness of each of the first strained ultrathin film 12 and the second strained ultrathin film 13, and the lattice constant averaged by the film thickness of the strained superlattice layer of the device and the active layer The relationship of photoluminescence intensity (PL intensity) was investigated. As a result, it was found that the PL intensity decreases as the difference between the average lattice constant of the strained superlattice layer and that of the active layer 14 increases. However, the average constant of the strained superlattice layer is 0.995 to 1.0 of that of the active layer.
Within the range of 05 times, the PL intensity is almost constant, and within this range, a device having a strong emission intensity can be obtained, and within this range, a device with good reproducibility can be obtained, which is advantageous in device production. It could be confirmed.
なお、本実施例においては、ＩnＧaＡsＰ／ＩnＧaＰ系
発光素子とし、歪超格子層をＧaＰ層とＩnＰ層で構成し
たが、これら化合物半導体に限定されず、ＩnＧaＡsＰ
／ＩnＰ系、ＡlＧaＳb／ＧaＳb系、II／VI族化合物半導
体でも良く、又、歪超格子層も化合物半導体やＳi，Ｇe
等の元素半導体でも良い。また、歪超格子層を活性層の
両側に配したが、片側だけでも良く、歪超格子層の組成
および層数を活性層に対して対称としたが対称と限定す
ることはなく非対称でも良い。また、発光領域となる活
性層を１層で構成したが、多重量子井戸構造としても本
発明の効果は十分に発揮できる。In this example, the InGaAsP / InGaP-based light emitting device was used, and the strained superlattice layer was composed of the GaP layer and the InP layer.
/ InP system, AlGaSb / GaSb system, II / VI group compound semiconductor may be used, and the strained superlattice layer may be a compound semiconductor or Si, Ge.
It may be an elemental semiconductor such as. Further, although the strained superlattice layers are arranged on both sides of the active layer, they may be arranged on only one side. The composition and the number of strained superlattice layers are symmetrical with respect to the active layer, but they are not limited to symmetrical and may be asymmetrical. . Further, although the active layer serving as the light emitting region is composed of one layer, the effect of the present invention can be sufficiently exerted even in the case of a multiple quantum well structure.
（発明の効果） 以上詳細に述べた通り、本発明によれば、従来の歪等薄
膜を有する発光素子の特徴であるキャリアの注入効率を
維持すると共に、発光効率の改善、発光温度特性の改
善、長寿命が実現できる。さらに歪超格子層の膜厚で平
均した格子定数が活性層の格子定数の０．９９５〜１．
００５倍の範囲にすれば、さらに高い発光効率の特性改
善が実現できる一方、素子製作も容易となる効果があ
る。(Effects of the Invention) As described in detail above, according to the present invention, the efficiency of carrier injection, which is a feature of a conventional light emitting device having a thin film such as strain, is maintained, and the emission efficiency and emission temperature characteristics are improved. Long life can be realized. Furthermore, the lattice constant averaged by the film thickness of the strained superlattice layer is 0.995 to 1.
When the range is 005 times, the characteristics of higher light emission efficiency can be realized, and the device can be easily manufactured.
第１図は本発明の一実施例の模式的断面図、第２図は従
来の発光素子を説明する模式的断面図である。図におい
て、 １１……ｎ型クラッド層、１２……第１の歪超薄膜、１
３……第２の歪超薄膜層、１４……活性層、１５……ｐ
型クラッド層、２１，２２……歪超薄膜である。FIG. 1 is a schematic sectional view of an embodiment of the present invention, and FIG. 2 is a schematic sectional view for explaining a conventional light emitting device. In the figure, 11 ... N-type cladding layer, 12 ... First strained ultra-thin film, 1
3 ... second strained ultra-thin film layer, 14 ... active layer, 15 ... p
Type clad layers 21, 22, ... Strained ultra-thin films.
Claims (2)
が、この活性層に比べエネルギーギャップの大きいクラ
ッド層で挾み込まれた構造の半導体発光素子において、
前記クラッド層よりエネルギーギャップが大きくかつ格
子定数が小さい第１の歪超薄膜と前記クラッド層より格
子定数が大きい第２の歪超薄膜とを交互に積層した歪超
格子層を、前記クラッド層と前記活性層との間の少なく
とも一方に有することを特徴とする半導体発光素子。1. A semiconductor light-emitting device having a structure in which a single-layer or multi-layer active layer to be a light-emitting region is sandwiched by a clad layer having a larger energy gap than the active layer,
A strained superlattice layer in which a first strained ultrathin film having a larger energy gap and a smaller lattice constant than the clad layer and a second strained ultrathin film having a larger lattice constant than the clad layer are alternately laminated is referred to as the clad layer. A semiconductor light-emitting device characterized by having at least one between the active layer and the active layer.
格子層の膜厚で平均化した格子定数が、活性層の格子定
数の０．９９５から１．００５倍の範囲にあることを特
徴とする特許請求の範囲第１項記載の半導体発光素子。2. A lattice constant averaged by the film thickness of a strained superlattice layer in which layers having different lattice constants are alternately laminated is in the range of 0.995 to 1.005 times the lattice constant of the active layer. The semiconductor light emitting device according to claim 1, which is characterized in that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2245285A JPH0632340B2 (en) | 1985-02-07 | 1985-02-07 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2245285A JPH0632340B2 (en) | 1985-02-07 | 1985-02-07 | Semiconductor light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61181185A JPS61181185A (en) | 1986-08-13 |
| JPH0632340B2 true JPH0632340B2 (en) | 1994-04-27 |
Family
ID=12083102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2245285A Expired - Lifetime JPH0632340B2 (en) | 1985-02-07 | 1985-02-07 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0632340B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0746745B2 (en) * | 1986-06-17 | 1995-05-17 | 松下電器産業株式会社 | Semiconductor laser device |
| JPH0793471B2 (en) * | 1987-06-29 | 1995-10-09 | 日本電気株式会社 | Semiconductor quantum well laser |
| JP2724827B2 (en) * | 1987-07-02 | 1998-03-09 | 国際電信電話株式会社 | Infrared light emitting device |
| JPH0821761B2 (en) * | 1987-11-25 | 1996-03-04 | 三菱電機株式会社 | Semiconductor light emitting device |
| JP2658291B2 (en) * | 1988-11-04 | 1997-09-30 | 日本電気株式会社 | Light emitting element |
| JP2669139B2 (en) * | 1990-10-24 | 1997-10-27 | 日本電気株式会社 | Semiconductor laser |
| JPH07120424B2 (en) * | 1991-02-07 | 1995-12-20 | 松下電工株式会社 | Print inspection method |
| JPH05243676A (en) * | 1992-02-28 | 1993-09-21 | Mitsubishi Electric Corp | Semiconductor laser device |
| JPH07335981A (en) * | 1994-06-07 | 1995-12-22 | Mitsubishi Electric Corp | Wavelength tunable filter having semiconductor light emitting device, laser amplifier, and amplification function |
| US5509024A (en) * | 1994-11-28 | 1996-04-16 | Xerox Corporation | Diode laser with tunnel barrier layer |
| US5577061A (en) * | 1994-12-16 | 1996-11-19 | Hughes Aircraft Company | Superlattice cladding layers for mid-infrared lasers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57152178A (en) * | 1981-03-17 | 1982-09-20 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting device with super lattice structure |
-
1985
- 1985-02-07 JP JP2245285A patent/JPH0632340B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61181185A (en) | 1986-08-13 |
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