JPH06338497A - 化学気相成長法 - Google Patents
化学気相成長法Info
- Publication number
- JPH06338497A JPH06338497A JP12694393A JP12694393A JPH06338497A JP H06338497 A JPH06338497 A JP H06338497A JP 12694393 A JP12694393 A JP 12694393A JP 12694393 A JP12694393 A JP 12694393A JP H06338497 A JPH06338497 A JP H06338497A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- chemical vapor
- shower head
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000000126 substance Substances 0.000 title description 3
- 239000007789 gas Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 239000012495 reaction gas Substances 0.000 claims description 14
- -1 silylamine compound Chemical class 0.000 claims description 11
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 2
- 239000012048 reactive intermediate Substances 0.000 abstract 2
- 239000000376 reactant Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000007806 chemical reaction intermediate Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 239000000543 intermediate Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】
【目的】 膜中に水分や炭素成分のない高品位、かつ被
膜性の良いシリコンナイトライド及びシリコンオキシナ
イトライド膜を提供する。 【構成】 チャンバー３内を数ｔｏｒｒ前後の減圧状態
にし、成膜に用いる個々のガスは、シャワーヘッド電極
４内で混合され、シャワーヘッド電極４からチャンバー
３内に導入する。シャワーヘッド電極４及び下部電極１
間に高周波電源１２により、高周波電圧を加え、シャワ
ーヘッド電極４で混合されたガスを、チャンバー３内で
プラズマ化し、化学反応を起して反応中間体を形成す
る。この反応中間体により、基板２上に被膜性の良い膜
を形成する。反応ガスは、ナイトライド膜を形成する際
は、トリシリルアミン６とアンモニアガスを用い、オキ
シナイトライド膜を形成する際は、トリシリルアミン６
とアンモニアガスの他に亜酸化窒素（Ｎ2Ｏ）ガスを用
いる。
膜性の良いシリコンナイトライド及びシリコンオキシナ
イトライド膜を提供する。 【構成】 チャンバー３内を数ｔｏｒｒ前後の減圧状態
にし、成膜に用いる個々のガスは、シャワーヘッド電極
４内で混合され、シャワーヘッド電極４からチャンバー
３内に導入する。シャワーヘッド電極４及び下部電極１
間に高周波電源１２により、高周波電圧を加え、シャワ
ーヘッド電極４で混合されたガスを、チャンバー３内で
プラズマ化し、化学反応を起して反応中間体を形成す
る。この反応中間体により、基板２上に被膜性の良い膜
を形成する。反応ガスは、ナイトライド膜を形成する際
は、トリシリルアミン６とアンモニアガスを用い、オキ
シナイトライド膜を形成する際は、トリシリルアミン６
とアンモニアガスの他に亜酸化窒素（Ｎ2Ｏ）ガスを用
いる。
Description
【０００１】
【産業上の利用分野】本発明は、半導体装置の製造法、
特に配線層のパッシベーション膜（保護膜）を形成させ
る化学気相成長法に関する。
特に配線層のパッシベーション膜（保護膜）を形成させ
る化学気相成長法に関する。
【０００２】
【従来の技術】半導体装置の微細化に伴い、半導体装置
が構成する配線の間隔が１μｍ以下の非常に狭い設計ル
ールにより開発されている。このように非常に微細な配
線を保護するため、従来シリコンナイトライド及びシリ
コンオキシナイトライド膜が保護膜として配線を覆うよ
うに形成されてきた。しかし、このような微細配線で
は、配線間の隙間に保護するに充分な膜厚を持つシリコ
ンナイトライド及びシリコンオキシナイトライド膜を形
成することができず、また、配線間に大きな隙間（ボイ
ド）を残したまま保護膜が形成され、ホトリソグラフィ
ーの際、ボイド内に残留していたガスが加熱を受けて爆
発し、保護膜上に形成されたレジスト膜を吹き飛ばして
しまうという欠点がある。
が構成する配線の間隔が１μｍ以下の非常に狭い設計ル
ールにより開発されている。このように非常に微細な配
線を保護するため、従来シリコンナイトライド及びシリ
コンオキシナイトライド膜が保護膜として配線を覆うよ
うに形成されてきた。しかし、このような微細配線で
は、配線間の隙間に保護するに充分な膜厚を持つシリコ
ンナイトライド及びシリコンオキシナイトライド膜を形
成することができず、また、配線間に大きな隙間（ボイ
ド）を残したまま保護膜が形成され、ホトリソグラフィ
ーの際、ボイド内に残留していたガスが加熱を受けて爆
発し、保護膜上に形成されたレジスト膜を吹き飛ばして
しまうという欠点がある。
【０００３】このような現象は、保護膜の被膜性が良く
ないために発生する。そこで被膜性を改善するために、
有機シラン，オゾンに過酸化水素，水を添加した反応ガ
スを用いたパルスプラズマ法による化学気相成長法によ
り、酸化膜の被膜性を向上させる方法が提案された（特
願平４−３２０９７３号）。また、ビスジターシャリブ
トキシアミノシランイミド〔（ｔ−Ｃ4Ｈ9Ｏ）ＳｉＮＨ
2〕2ＮＨを用いたプラズマ気相化学成長法で、被膜性の
良いシリコンオキシナイトライドを形成する方法も提案
されている（特願平２−２６５２４２号）。
ないために発生する。そこで被膜性を改善するために、
有機シラン，オゾンに過酸化水素，水を添加した反応ガ
スを用いたパルスプラズマ法による化学気相成長法によ
り、酸化膜の被膜性を向上させる方法が提案された（特
願平４−３２０９７３号）。また、ビスジターシャリブ
トキシアミノシランイミド〔（ｔ−Ｃ4Ｈ9Ｏ）ＳｉＮＨ
2〕2ＮＨを用いたプラズマ気相化学成長法で、被膜性の
良いシリコンオキシナイトライドを形成する方法も提案
されている（特願平２−２６５２４２号）。
【０００４】
【発明が解決しようとする課題】しかし、有機シラン，
オゾンに過酸化水素，水を添加した反応ガスを用いたパ
ルスプラズマ法による化学気相成長法では、反応ガス内
に水分があるため、どのようなプラズマによる改質効果
を行ったとしても、形成された膜の中に水分がかなりの
量で含まれてしまう。膜中に水分が多いと、配線金属が
腐食されたり、外部からの水分が半導体装置内に入りや
すくなり、保護膜としての性能が著しく低下してしま
う。
オゾンに過酸化水素，水を添加した反応ガスを用いたパ
ルスプラズマ法による化学気相成長法では、反応ガス内
に水分があるため、どのようなプラズマによる改質効果
を行ったとしても、形成された膜の中に水分がかなりの
量で含まれてしまう。膜中に水分が多いと、配線金属が
腐食されたり、外部からの水分が半導体装置内に入りや
すくなり、保護膜としての性能が著しく低下してしま
う。
【０００５】また、ビスジターシャリブトキシアミノシ
ランイミド〔（ｔ−Ｃ4Ｈ9Ｏ）ＳｉＮＨ2〕2ＮＨを用い
たプラズマ気相化学成長法では、形成されたシリコンオ
キシナイトライド膜中にかなりの量で炭素が混入する。
膜中に炭素成分があると、耐湿性が低下するほかに、下
地の配線金属や絶縁膜との接着力が低下し、膜の剥がれ
が発生する。
ランイミド〔（ｔ−Ｃ4Ｈ9Ｏ）ＳｉＮＨ2〕2ＮＨを用い
たプラズマ気相化学成長法では、形成されたシリコンオ
キシナイトライド膜中にかなりの量で炭素が混入する。
膜中に炭素成分があると、耐湿性が低下するほかに、下
地の配線金属や絶縁膜との接着力が低下し、膜の剥がれ
が発生する。
【０００６】本発明の目的は、膜中に水分や炭素のよう
な成分のない高品位で、しかも被膜性の良い膜を形成さ
せる化学気相成長法を提供することにある。
な成分のない高品位で、しかも被膜性の良い膜を形成さ
せる化学気相成長法を提供することにある。
【０００７】
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る化学気相成長法は、反応ガスをプラズ
マ化し、化学反応を生じさせて基板上に気相成長膜を成
長させる化学気相成長法であって、反応ガスは、少なく
ともシリコンソースガスとしてシリルアミン化合物を含
むものであり、気相成長膜は、シリコンナイトライド膜
又はシリコンオキシナイトライド膜である。
め、本発明に係る化学気相成長法は、反応ガスをプラズ
マ化し、化学反応を生じさせて基板上に気相成長膜を成
長させる化学気相成長法であって、反応ガスは、少なく
ともシリコンソースガスとしてシリルアミン化合物を含
むものであり、気相成長膜は、シリコンナイトライド膜
又はシリコンオキシナイトライド膜である。
【０００８】また、反応ガスは、前記シリルアミン化合
物のほかにアンモニアガスを含むものであり、気相成長
膜は、シリコンナイトライド膜である。
物のほかにアンモニアガスを含むものであり、気相成長
膜は、シリコンナイトライド膜である。
【０００９】また、反応ガスは、前記シリルアミン化合
物のほかにアンモニアガスと、亜酸化窒素ガスを含むも
のであり、気相成長膜は、シリコンオキシナイトライド
膜である。
物のほかにアンモニアガスと、亜酸化窒素ガスを含むも
のであり、気相成長膜は、シリコンオキシナイトライド
膜である。
【００１０】
【作用】シリコンソースガスとしてのシリルアミン化合
物を主成分とする反応ガスをプラズマ化して反応中間体
を形成し、この反応中間体により、基板上にシリコンナ
イトライド膜，シリコンオキシナイトライド膜を形成す
る。
物を主成分とする反応ガスをプラズマ化して反応中間体
を形成し、この反応中間体により、基板上にシリコンナ
イトライド膜，シリコンオキシナイトライド膜を形成す
る。
【００１１】
【実施例】以下に、本発明による化学気相成長法の一実
施例を図１に基づき詳細に説明する。図１は、本発明に
よる化学気相成長法を実施するための化学気相成長装置
を示す概略図である。
施例を図１に基づき詳細に説明する。図１は、本発明に
よる化学気相成長法を実施するための化学気相成長装置
を示す概略図である。
【００１２】図１において、チャンバー３内を数ｔｏｒ
ｒ前後の減圧状態にする。成膜に用いる個々のガスは、
シャワーヘッド電極４内で混合し、シャワーヘッド電極
４からチャンバー３内に導入する。ここで、チャンバー
３内に上下に対向して設置されたシャワーヘッド電極４
及び下部電極１間に、高周波電源１２より、高周波電圧
を加える。これにより、シャワーヘッド電極４内で混合
されたガスは、プラズマ化され、化学反応が起こり、下
部電極１の基板２上に反応ガスによる膜が形成される。
ｒ前後の減圧状態にする。成膜に用いる個々のガスは、
シャワーヘッド電極４内で混合し、シャワーヘッド電極
４からチャンバー３内に導入する。ここで、チャンバー
３内に上下に対向して設置されたシャワーヘッド電極４
及び下部電極１間に、高周波電源１２より、高周波電圧
を加える。これにより、シャワーヘッド電極４内で混合
されたガスは、プラズマ化され、化学反応が起こり、下
部電極１の基板２上に反応ガスによる膜が形成される。
【００１３】反応ガスは、ナイトライド膜を形成する際
は、トリシリルアミン６とアンモニアガスを用い、オキ
シナイトライド膜を形成する際は、トリシリルアミン６
とアンモニアガスの他に亜酸化窒素（Ｎ2Ｏ）ガスを用
いる。これらのガス中で、アンモニアガスと亜酸化窒素
（Ｎ2Ｏ）ガスは、常温で気体のため、それぞれのガス
ボンベ１０から流量調整器１１を通してガス配管７，８
からシャワーヘッド電極４へ個別に導入される。トリシ
リルアミン６については、常温で液体のため、キャリア
ーガスとしてヘリウムを用い、ガスボンベ１０からヘリ
ウムを液体材料気化器５内のトリシリルアミン６中に吹
き込み、トリシリルアミン６をヘリウムでバブリング
し、気化されたトリシリルアミン６をガス配管９からシ
ャワーヘッド電極４へ導入する。また、液体材料気化器
５に供給されるヘリウムの流量を流量調整器１１で調整
することにより、ガス配管９を通してシャワーヘッド電
極４に導入されるトリシリルアミン６の流量を決定す
る。
は、トリシリルアミン６とアンモニアガスを用い、オキ
シナイトライド膜を形成する際は、トリシリルアミン６
とアンモニアガスの他に亜酸化窒素（Ｎ2Ｏ）ガスを用
いる。これらのガス中で、アンモニアガスと亜酸化窒素
（Ｎ2Ｏ）ガスは、常温で気体のため、それぞれのガス
ボンベ１０から流量調整器１１を通してガス配管７，８
からシャワーヘッド電極４へ個別に導入される。トリシ
リルアミン６については、常温で液体のため、キャリア
ーガスとしてヘリウムを用い、ガスボンベ１０からヘリ
ウムを液体材料気化器５内のトリシリルアミン６中に吹
き込み、トリシリルアミン６をヘリウムでバブリング
し、気化されたトリシリルアミン６をガス配管９からシ
ャワーヘッド電極４へ導入する。また、液体材料気化器
５に供給されるヘリウムの流量を流量調整器１１で調整
することにより、ガス配管９を通してシャワーヘッド電
極４に導入されるトリシリルアミン６の流量を決定す
る。
【００１４】シャワーヘッド電極４から導入されるトリ
シリルアミン６は、チャンバー３内でプラズマ化された
際、化学反応を起こす。その際、トリシリルアミン６
は、反応中間体〔−Ｈ2Ｓｉ（ＮＨ）−〕ｎを形成す
る。この反応中間体〔−Ｈ2Ｓｉ（ＮＨ）−〕ｎ中のｎ
は重合度を示し、成膜を行っている圧力（数ｔｏｒｒ）
では、反応中間体同士の重合が進まず、ｎの値は、ほぼ
１と見られる。
シリルアミン６は、チャンバー３内でプラズマ化された
際、化学反応を起こす。その際、トリシリルアミン６
は、反応中間体〔−Ｈ2Ｓｉ（ＮＨ）−〕ｎを形成す
る。この反応中間体〔−Ｈ2Ｓｉ（ＮＨ）−〕ｎ中のｎ
は重合度を示し、成膜を行っている圧力（数ｔｏｒｒ）
では、反応中間体同士の重合が進まず、ｎの値は、ほぼ
１と見られる。
【００１５】この中間体の化学式を見ると、中間体を構
成する元素は、水素，窒素，シリコンの３種類のみであ
る。これは、信頼性の高いシランを原料とするシリコン
ナイトライド及びシリコンオキシナイトライド膜に含ま
れているもののみであり、不純物の少ない高品位な膜質
を提供することができる。
成する元素は、水素，窒素，シリコンの３種類のみであ
る。これは、信頼性の高いシランを原料とするシリコン
ナイトライド及びシリコンオキシナイトライド膜に含ま
れているもののみであり、不純物の少ない高品位な膜質
を提供することができる。
【００１６】成膜反応時、この反応中間体は基板上に堆
積し、基板表面を流動することにより、被膜性の良い膜
を形成する。さらに基板表面を流動する反応中間体は、
プラズマから基板へ入射する活性な粒子によって、重合
が進む。この際、基板に入射する活性な粒子の入射エネ
ルギーを調整すること、すなわち、シャワーヘッド電極
４と下部電極１との間に加わる高周波電圧を変えること
により、反応中間体の重合する速度を変えることができ
る。これにより、図２のように、隣接する配線１４，１
４間の微細なスペースを隙間なく被膜するような優れた
被膜性をもつシリコンナイトライド及びシリコンオキシ
ナイトライド膜１３を形成することができる。図２中、
１６は基板，１５は絶縁膜である。
積し、基板表面を流動することにより、被膜性の良い膜
を形成する。さらに基板表面を流動する反応中間体は、
プラズマから基板へ入射する活性な粒子によって、重合
が進む。この際、基板に入射する活性な粒子の入射エネ
ルギーを調整すること、すなわち、シャワーヘッド電極
４と下部電極１との間に加わる高周波電圧を変えること
により、反応中間体の重合する速度を変えることができ
る。これにより、図２のように、隣接する配線１４，１
４間の微細なスペースを隙間なく被膜するような優れた
被膜性をもつシリコンナイトライド及びシリコンオキシ
ナイトライド膜１３を形成することができる。図２中、
１６は基板，１５は絶縁膜である。
【００１７】ここで、図３に、種々の方法によるシリコ
ンナイトライド及びシリコンオキシナイトライド膜の耐
湿試験の結果を示す。試験の条件は、湿度１００％，温
度１２５℃，２気圧の加圧状態に膜を放置して、膜中に
侵入する水分を調べたものである。水や炭素を成膜材料
として成膜されたシリコン膜中には、水分又は炭素が膜
中に始めから含まれるため、それぞれ試験開始直後から
膜中への水分の侵入が見られる。これに対し、シリルア
ミン化合物によるシリコンナイトライド及びシリコンオ
キシナイトライド膜では、試験２００時間後でも膜への
水分の侵入は、見られない。
ンナイトライド及びシリコンオキシナイトライド膜の耐
湿試験の結果を示す。試験の条件は、湿度１００％，温
度１２５℃，２気圧の加圧状態に膜を放置して、膜中に
侵入する水分を調べたものである。水や炭素を成膜材料
として成膜されたシリコン膜中には、水分又は炭素が膜
中に始めから含まれるため、それぞれ試験開始直後から
膜中への水分の侵入が見られる。これに対し、シリルア
ミン化合物によるシリコンナイトライド及びシリコンオ
キシナイトライド膜では、試験２００時間後でも膜への
水分の侵入は、見られない。
【００１８】なお本実施例において、シリルアミン化合
物としてシリルアミンを用いて説明しているが、シリル
アミン化合物としては、シリルアミン以外に、（Ｓｉ2
Ｈ5）3Ｎ，（ＳｉＨ3ＮＳｉＨ2）3，（ＳｉＨ3）4Ｎ2な
どを用いても同様な効果が得られる。
物としてシリルアミンを用いて説明しているが、シリル
アミン化合物としては、シリルアミン以外に、（Ｓｉ2
Ｈ5）3Ｎ，（ＳｉＨ3ＮＳｉＨ2）3，（ＳｉＨ3）4Ｎ2な
どを用いても同様な効果が得られる。
【００１９】
【発明の効果】以上説明したように本発明のプラズマに
よる化学気相成長法によれば、シリコンソースガスとし
てシリルアミン化合物を用いることにより、膜中に水分
や炭素のような成分のない高品位、かつ被膜性の良いシ
リコンナイトライド及びシリコンオキシナイトライド膜
を提供することができる。この高品位、かつ被膜性の良
いシリコンナイトライド及びシリコンオキシナイトライ
ド膜を半導体装置、例えばトランジスタに用いることに
より、トランジスタへの水分の侵入を抑え、トランジス
タのホットキャリアー耐性を伸ばし、トランジスタの寿
命を従来のものに比べ１０％伸ばすことができる。
よる化学気相成長法によれば、シリコンソースガスとし
てシリルアミン化合物を用いることにより、膜中に水分
や炭素のような成分のない高品位、かつ被膜性の良いシ
リコンナイトライド及びシリコンオキシナイトライド膜
を提供することができる。この高品位、かつ被膜性の良
いシリコンナイトライド及びシリコンオキシナイトライ
ド膜を半導体装置、例えばトランジスタに用いることに
より、トランジスタへの水分の侵入を抑え、トランジス
タのホットキャリアー耐性を伸ばし、トランジスタの寿
命を従来のものに比べ１０％伸ばすことができる。
【００２０】以上のように高品位、かつ被膜性の良いシ
リコンナイトライド及びシリコンオキシナイトライド膜
を用いることにより、信頼性の高い半導体装置を供給す
ることができる。
リコンナイトライド及びシリコンオキシナイトライド膜
を用いることにより、信頼性の高い半導体装置を供給す
ることができる。
【図１】本発明に係るプラズマによる化学気相成長法を
実施するための化学気相成長装置を示す概略図である。
実施するための化学気相成長装置を示す概略図である。
【図２】本発明による化学気相成長膜を用いて製造した
半導体装置を示す断面図である。
半導体装置を示す断面図である。
【図３】本発明によるシリコンナイトライド及びシリコ
ンオキシナイトライド膜の耐湿試験の結果を示した図で
ある。
ンオキシナイトライド膜の耐湿試験の結果を示した図で
ある。
１ 下部電極 ２ 基板 ３ チャンバー ４ シャワーヘッド電極 ５ 液体材料気化器 ６ トリシリルアミン ７ ガス配管（アンモニア） ８ ガス配管（亜酸化窒素） ９ ガス配管（トリシリルアミン） １０ ガスボンベ １１ 流量調整器 １２ 高周波電源 １３ 本発明によるシリコンナイトライド又はシリコン
オキシナイトライド膜 １４ 配線 １５ 絶縁膜 １６ 基板
オキシナイトライド膜 １４ 配線 １５ 絶縁膜 １６ 基板
Claims (3)
- 【請求項１】 反応ガスをプラズマ化し、化学反応を生
じさせて基板上に気相成長膜を成長させる化学気相成長
法であって、 反応ガスは、少なくともシリコンソースガスとしてシリ
ルアミン化合物を含むものであり、 気相成長膜は、シリコンナイトライド膜又はシリコンオ
キシナイトライド膜であることを特徴とする化学気相成
長法。 - 【請求項２】 反応ガスは、前記シリルアミン化合物の
ほかにアンモニアガスを含むものであり、 気相成長膜は、シリコンナイトライド膜であることを特
徴とする請求項１に記載の化学気相成長法。 - 【請求項３】 反応ガスは、前記シリルアミン化合物の
ほかにアンモニアガスと、亜酸化窒素ガスを含むもので
あり、 気相成長膜は、シリコンオキシナイトライド膜であるこ
とを特徴とする請求項１に記載の化学気相成長法。
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|---|---|---|---|
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5126943A JP2508581B2 (ja) | 1993-05-28 | 1993-05-28 | 化学気相成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06338497A true JPH06338497A (ja) | 1994-12-06 |
| JP2508581B2 JP2508581B2 (ja) | 1996-06-19 |
Family
ID=14947740
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5126943A Expired - Lifetime JP2508581B2 (ja) | 1993-05-28 | 1993-05-28 | 化学気相成長法 |
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| Country | Link |
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| JP (1) | JP2508581B2 (ja) |
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