JPH0634248U - Power semiconductor device - Google Patents
Power semiconductor deviceInfo
- Publication number
- JPH0634248U JPH0634248U JP068683U JP6868392U JPH0634248U JP H0634248 U JPH0634248 U JP H0634248U JP 068683 U JP068683 U JP 068683U JP 6868392 U JP6868392 U JP 6868392U JP H0634248 U JPH0634248 U JP H0634248U
- Authority
- JP
- Japan
- Prior art keywords
- power semiconductor
- resin
- semiconductor device
- view
- tie bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】
【目的】 樹脂成型性に優れた高信頼性の樹脂封止型の
電力半導体装置を提供する。
【構成】 タイバー接続部３に、電力半導体素子搭載面
側へ略直角に折曲する段差部１０を設けてなることを特
徴とする。
(57) [Abstract] [Purpose] To provide a highly reliable resin-sealed power semiconductor device having excellent resin moldability. [Structure] A tie bar connecting portion 3 is provided with a step portion 10 that is bent substantially at a right angle to a power semiconductor element mounting surface side.
Description
【０００１】[0001]
本考案は、リードフレーム上に搭載した電力半導体素子を樹脂封止してなる電 力半導体装置の構造に関する。 The present invention relates to a structure of an electric power semiconductor device in which a power semiconductor element mounted on a lead frame is resin-sealed.
【０００２】[0002]
従来の技術について図５乃至図７を参照して説明する。図５及び図６は、従来 の電力半導体装置の製造工程を示す図、図７は従来例による問題点を説明するた めの図であり、図５及び図７の（ａ）及び（ｂ）はそれぞれ正面図及び側面図、 図６の（ａ），（ｂ），（ｃ）はそれぞれ正面図、側面図、平面図である。従来 は、図５に示すように、素子搭載部１と、リード部２と、タイバー接続部３とか らなるリードフレーム４の前記素子搭載部１に図示しない電力半導体素子を搭載 し、その後、図６に示すようにそれぞれの電力半導体素子をトランスファーモー ルド法により樹脂封止し、次いで、各タイバーを分割切断して単独の電力半導体 装置を得ている。なお、図５及び図６において５は上部タイバー、６は下部タイ バー、７は封止樹脂である。 A conventional technique will be described with reference to FIGS. 5 and 6 are diagrams showing a conventional manufacturing process of a power semiconductor device, and FIG. 7 is a diagram for explaining a problem in the conventional example, and FIGS. 5 and 7 are (a) and (b). Is a front view and a side view, respectively, and (a), (b), and (c) of FIG. 6 are a front view, a side view, and a plan view, respectively. Conventionally, as shown in FIG. 5, a power semiconductor element (not shown) is mounted on the element mounting portion 1 of the lead frame 4 including the element mounting portion 1, the lead portion 2, and the tie bar connecting portion 3, and then the As shown in FIG. 6, each power semiconductor element is resin-sealed by the transfer mold method, and then each tie bar is divided and cut to obtain a single power semiconductor device. 5 and 6, 5 is an upper tie bar, 6 is a lower tie bar, and 7 is a sealing resin.
【０００３】[0003]
ところで、図６に示す樹脂封止は、図７に示すように外部の樹脂注入装置の樹 脂注入口８より樹脂７を注入して行われるが、この際、樹脂７の流れは図７（ｂ ）のＡ，Ｂのように分かれる。図より明らかなように、リードフレーム４の下側 、樹脂薄肉部９は樹脂厚が薄くなっており、ここには樹脂７の流れ（Ｂ）は流れ 込みにくく、樹脂充填が不十分となり外観上及び特性上問題となる場合があった 。そこで、本考案の目的は、樹脂充填の際にリードフレームの周囲に樹脂が確実 に回り込む、優れた成型性の電力半導体装置を提供することにある。 By the way, the resin sealing shown in FIG. 6 is performed by injecting the resin 7 from the resin injection port 8 of the external resin injecting device as shown in FIG. It divides like A and B of b). As is clear from the figure, the resin thin portion 9 on the lower side of the lead frame 4 has a thin resin thickness, and the flow of the resin 7 (B) is difficult to flow into this portion, resulting in insufficient resin filling and an external appearance. In some cases, there was a problem in terms of characteristics. Therefore, an object of the present invention is to provide a power semiconductor device having excellent moldability, in which the resin surely wraps around the lead frame when the resin is filled.
【０００４】[0004]
前記目的を達成するために本考案は、素子搭載部と、リード部と、タイバー接 続部とからなるリードフレームに電力半導体素子を搭載、樹脂封止してなる電力 半導体装置において、前記タイバー接続部に、前記電力半導体素子搭載面側へ略 直角に折曲する段差部を設けてなることを特徴とする。 In order to achieve the above object, the present invention provides a power semiconductor device in which a power semiconductor element is mounted on a lead frame including an element mounting portion, a lead portion, and a tie bar connecting portion and is resin-sealed. And a stepped portion that is bent substantially at a right angle to the power semiconductor element mounting surface side.
【０００５】[0005]
本考案は、上記のように、タイバー接続部に前記電力半導体素子搭載面側へ略 直角に折曲する段差部を設けているので、樹脂の流れはこの段差部に当たり、従 来のようにリードフレームの上方にのみ多く流れるということなくリードフレー ムの周囲に確実に回り込み、しかも段差部の形状を変えることによってリードフ レーム形状、樹脂流量等に応じた樹脂流れの調整を行えるので、成型性に優れた 電力半導体装置を実現できる。 According to the present invention, as described above, since the tie bar connecting portion is provided with the step portion which is bent at a substantially right angle to the power semiconductor element mounting surface side, the resin flow hits the step portion and leads as in the conventional case. It does not flow too much only above the frame, it surely wraps around the lead frame, and by changing the shape of the stepped portion, the resin flow can be adjusted according to the lead frame shape, resin flow rate, etc. An excellent power semiconductor device can be realized.
【０００６】[0006]
本考案の一実施例について、図１及び図２を参照して説明する。 An embodiment of the present invention will be described with reference to FIGS.
【０００７】 図１及び図２は、本実施例による電力半導体装置の製造工程を示す図で、（ａ） 及び（ｂ）はそれぞれ、正面図及び側面図である。なお、図５乃至図７に示す従 来例と同一機能部分には同一記号を付している。ここでは、主に従来例と異なる 点について説明する。1 and 2 are views showing a manufacturing process of the power semiconductor device according to the present embodiment, and FIGS. 1 (a) and 1 (b) are a front view and a side view, respectively. The same functional parts as those of the conventional example shown in FIGS. 5 to 7 are designated by the same symbols. Here, differences from the conventional example will be mainly described.
【０００８】 図１に示すように、本実施例による電力半導体装置のリードフレーム４’は、 タイバー接続部３’に電力半導体素子搭載部１側へ略直角に折曲する段差部１０ を設け、さらに、この段差部１０に一体で上部タイバー５の方向に突出する調整 部１１を設けている。段差部１０及び調整部１１は同じ高さとしている。この構 造により、図２に示すように、樹脂封止時の樹脂７の流れは、段差部１０及び調 整部１１に当たりＡ’及びＢ’のようにリードフレーム４’の両面に略均等に流 れる。As shown in FIG. 1, the lead frame 4 ′ of the power semiconductor device according to the present embodiment is provided with a step portion 10 that is bent at a substantially right angle toward the power semiconductor element mounting portion 1 side in the tie bar connection portion 3 ′. Further, the stepped portion 10 is integrally provided with an adjusting portion 11 which projects toward the upper tie bar 5. The step portion 10 and the adjusting portion 11 have the same height. With this structure, as shown in FIG. 2, the flow of the resin 7 at the time of resin sealing hits the step portion 10 and the adjusting portion 11 and becomes substantially even on both surfaces of the lead frame 4 ′ like A ′ and B ′. Run away.
【０００９】 この結果、従来の樹脂封止時のようにリードフレーム４’の下側、樹脂薄肉部 ９に樹脂７が十分に流れ込まず未充填部が発生し外観上及び特性上問題が生じる ということはなく、高信頼性の電力半導体装置を提供できる。As a result, unlike the conventional resin encapsulation, the resin 7 does not flow sufficiently into the resin thin portion 9 below the lead frame 4 ′ and an unfilled portion is generated, which causes problems in appearance and characteristics. Therefore, a highly reliable power semiconductor device can be provided.
【００１０】 図３（ａ），（ｂ），（ｃ）はそれぞれ、本考案の他の実施例による電力半導 体装置の正面図、側面図及び平面図である。この実施例は、調整部１１を段差部 １０よりも表面側に深く曲げた例を示しており、裏面側の樹脂薄肉部９に、より 樹脂が流れ込む構造としている。3A, 3B, and 3C are a front view, a side view, and a plan view, respectively, of a power semiconductor device according to another embodiment of the present invention. This embodiment shows an example in which the adjusting portion 11 is bent deeper than the step portion 10 toward the front surface side, and the resin is further poured into the thin resin portion 9 on the rear surface side.
【００１１】 図４（ａ），（ｂ），（ｃ）はそれぞれ本考案のさらに他の実施例による電力 半導体装置の正面図、側面図及び平面図である。この実施例は、タイバー接続部 ３に、段差部としての調整部１１のみを表面側に突出させた例である。例えば樹 脂量が少ない場合には、この構造によってもリードフレーム４’周囲の樹脂流れ を均一にでき、高信頼性の電力半導体装置を提供できる。4A, 4B and 4C are a front view, a side view and a plan view of a power semiconductor device according to still another embodiment of the present invention. This embodiment is an example in which only the adjusting portion 11 as a step portion is projected to the front surface side in the tie bar connecting portion 3. For example, when the amount of resin is small, this structure also makes it possible to make the resin flow around the lead frame 4'uniform and to provide a highly reliable power semiconductor device.
【００１２】 このように、段差部の形状を調整することにより、リードフレーム形状、樹脂 流量等に応じた樹脂流れの調整を行えるので、成型性に優れた電力半導体装置を 実現できる。As described above, by adjusting the shape of the step portion, the resin flow can be adjusted according to the shape of the lead frame, the resin flow rate, and the like, so that the power semiconductor device excellent in moldability can be realized.
【００１３】[0013]
以上説明したように本考案によれば、リードフレームの周囲を均一に樹脂モー ルドできる樹脂成型性に優れた高信頼性の電力半導体装置を提供できる。 As described above, according to the present invention, it is possible to provide a highly reliable power semiconductor device which is capable of molding a resin around the lead frame uniformly and which has excellent resin moldability.
【００１４】[0014]
【図１】（ａ）及び（ｂ）はそれぞれ、本考案の一実施
例による電力半導体装置の製造工程を示す正面図及び側
面図である。1A and 1B are respectively a front view and a side view showing a manufacturing process of a power semiconductor device according to an embodiment of the present invention.
【図２】（ａ）及び（ｂ）はそれぞれ、本考案の一実施
例による電力半導体装置の樹脂注入状態を説明するため
の正面図及び側面図である。2A and 2B are a front view and a side view, respectively, for explaining a resin injection state of a power semiconductor device according to an embodiment of the present invention.
【図３】（ａ）、（ｂ）及び（ｃ）はそれぞれ、本考案
の他の実施例による電力半導体装置の製造工程を示す正
面図、側面図及び平面図である。3 (a), (b) and (c) are respectively a front view, a side view and a plan view showing a manufacturing process of a power semiconductor device according to another embodiment of the present invention.
【図４】（ａ）、（ｂ）及び（ｃ）はそれぞれ、本考案
のさらに他の実施例による電力半導体装置の製造工程を
示す正面図、側面図及び平面図である。4 (a), (b) and (c) are respectively a front view, a side view and a plan view showing a manufacturing process of a power semiconductor device according to still another embodiment of the present invention.
【図５】（ａ）及び（ｂ）はそれぞれ、従来例による電
力半導体装置の製造工程を示す正面図及び側面図であ
る。5A and 5B are respectively a front view and a side view showing a manufacturing process of a power semiconductor device according to a conventional example.
【図６】（ａ）、（ｂ）及び（ｃ）はそれぞれ、従来例
による電力半導体装置の正面図、側面図及び平面図であ
る。6 (a), (b) and (c) are respectively a front view, a side view and a plan view of a conventional power semiconductor device.
【図７】（ａ）及び（ｂ）はそれぞれ、従来例による電
力半導体装置の樹脂注入状態を説明するための正面図及
び側面図である。7A and 7B are a front view and a side view, respectively, for explaining a resin injection state of a power semiconductor device according to a conventional example.
１ 素子搭載部 ２ リード部 ３’ タイバー接続部 ４’ リードフレーム １０ 段差部 １１ 調整部 1 element mounting part 2 lead part 3'tie bar connecting part 4'lead frame 10 step part 11 adjusting part
Claims (1)
続部とからなるリードフレームに電力半導体素子を搭
載、樹脂封止してなる電力半導体装置において、前記タ
イバー接続部に、前記電力半導体素子搭載面側へ略直角
に折曲する段差部を設けてなることを特徴とする電力半
導体装置。1. A power semiconductor device in which a power semiconductor element is mounted on a lead frame composed of an element mounting portion, a lead portion, and a tie bar connecting portion and is resin-sealed, wherein the power semiconductor element is attached to the tie bar connecting portion. A power semiconductor device comprising a step portion that is bent substantially at a right angle to the mounting surface side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992068683U JP2566383Y2 (en) | 1992-10-01 | 1992-10-01 | Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1992068683U JP2566383Y2 (en) | 1992-10-01 | 1992-10-01 | Power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0634248U true JPH0634248U (en) | 1994-05-06 |
| JP2566383Y2 JP2566383Y2 (en) | 1998-03-25 |
Family
ID=13380784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1992068683U Expired - Fee Related JP2566383Y2 (en) | 1992-10-01 | 1992-10-01 | Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2566383Y2 (en) |
-
1992
- 1992-10-01 JP JP1992068683U patent/JP2566383Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2566383Y2 (en) | 1998-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1005085B1 (en) | Resin-encapsulated electronic device | |
| JP3727446B2 (en) | Resin sealing mold for semiconductor devices | |
| JPH1034699A (en) | Resin sealing method and resin sealing device for SON package | |
| JPH01268159A (en) | Resin-sealed semiconductor device and injection metal mold | |
| JP2566383Y2 (en) | Power semiconductor device | |
| JP2752677B2 (en) | Method for manufacturing semiconductor device | |
| JPH05243301A (en) | Production of semiconductor device | |
| JPH05198707A (en) | Manufacture of semiconductor device | |
| JP2664945B2 (en) | Resin sealing mold for semiconductor device | |
| JP3075296B2 (en) | Method for manufacturing card base material for IC card and manufacturing die | |
| JP2528505B2 (en) | Molding equipment for mold parts in semiconductor devices | |
| JPH02135765A (en) | Lead frame for semiconductor device | |
| JPH06232304A (en) | Lead frame for full mold package | |
| JPS5810357Y2 (en) | Equipment for resin sealing | |
| JPH03263359A (en) | Molded flat package | |
| JPH01318257A (en) | Lead frame for resin-molded electronic component | |
| JPH0812877B2 (en) | Method for manufacturing resin-sealed semiconductor device | |
| JPS63162206A (en) | Resin molding apparatus | |
| JPH079614Y2 (en) | Mold for thermosetting resin encapsulation | |
| JPH0322464A (en) | Resin-sealed semiconductor device | |
| JP3061114U (en) | Mold resin for semiconductor devices | |
| JPH0710952U (en) | Lead frame for resin encapsulation | |
| JPH04133440A (en) | Resin-sealing metal mold | |
| JPS62197852U (en) | ||
| JPH04137045U (en) | Semiconductor element encapsulation mold |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |