JPH06342801A - 高速バイポ−ラトランジスタ及びその製造方法 - Google Patents

高速バイポ−ラトランジスタ及びその製造方法

Info

Publication number
JPH06342801A
JPH06342801A JP3144102A JP14410291A JPH06342801A JP H06342801 A JPH06342801 A JP H06342801A JP 3144102 A JP3144102 A JP 3144102A JP 14410291 A JP14410291 A JP 14410291A JP H06342801 A JPH06342801 A JP H06342801A
Authority
JP
Japan
Prior art keywords
oxide film
polysilicone
forming
electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3144102A
Other languages
English (en)
Japanese (ja)
Inventor
Myungsung Kim
明 聖 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH06342801A publication Critical patent/JPH06342801A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
JP3144102A 1990-09-06 1991-05-21 高速バイポ−ラトランジスタ及びその製造方法 Pending JPH06342801A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900014093A KR920007211A (ko) 1990-09-06 1990-09-06 고속 바이폴라 트랜지스터 및 그의 제조방법
KR1990P14093 1990-09-06

Publications (1)

Publication Number Publication Date
JPH06342801A true JPH06342801A (ja) 1994-12-13

Family

ID=19303325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3144102A Pending JPH06342801A (ja) 1990-09-06 1991-05-21 高速バイポ−ラトランジスタ及びその製造方法

Country Status (5)

Country Link
JP (1) JPH06342801A (it)
KR (1) KR920007211A (it)
FR (1) FR2666685A1 (it)
GB (1) GB2247778A (it)
IT (1) IT1244329B (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5986326A (en) * 1997-06-27 1999-11-16 Nec Corporation Semiconductor device with microwave bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141768A (ja) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62189753A (ja) * 1986-02-17 1987-08-19 Hitachi Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
US4829015A (en) * 1987-05-21 1989-05-09 Siemens Aktiengesellschaft Method for manufacturing a fully self-adjusted bipolar transistor
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141768A (ja) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPS62189753A (ja) * 1986-02-17 1987-08-19 Hitachi Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5986326A (en) * 1997-06-27 1999-11-16 Nec Corporation Semiconductor device with microwave bipolar transistor

Also Published As

Publication number Publication date
IT9022368A0 (it) 1990-12-13
FR2666685A1 (fr) 1992-03-13
GB2247778A (en) 1992-03-11
KR920007211A (ko) 1992-04-28
IT1244329B (it) 1994-07-08
GB9027182D0 (en) 1991-02-06
IT9022368A1 (it) 1992-03-07

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Effective date: 19951205