JPH06349984A - Semiconductor integrated circuit device and cooling method - Google Patents

Abstract

PURPOSE:To provide a semiconductor integrated circuit device adapted to the case in which power is increased by improving heat dissipating and cooling performances of a semiconductor chip and a method for cooling the same. CONSTITUTION:A chip carrier 1 has a package structure in which a semiconductor chip face down bonded to an electrode of a main surface of a package board 2 made of a ceramic material such as mullite, etc., through solder bump is hermetically sealed with a cap 6, and cooling medium channel grooves 20 are formed in the same direction as a channel direction of cooling medium to be jetted on an upper surface of the cap 6 to be connected to the board 2 through sealing solder 7. That is, the channels 20 are radially formed from the vicinity of a center of the cap 6 toward an outer periphery of the cap 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly to a cooling technique for a semiconductor integrated circuit device having a chip carrier structure.

[0002]

2. Description of the Related Art One of the conventional semiconductor integrated circuit device (hereinafter referred to as a chip carrier) mounting method is a method of mounting a semiconductor chip on a package substrate via CCB bumps. A cooling method for heat generation of these semiconductor chips is mainly air cooling or liquid cooling for heat radiation from the back surface of the semiconductor chip.

The semiconductor chip may be a bare chip or may be housed in an ultra-small package called a micro carrier.
For these structures, see “Proceedings of th
e 1992 International Conference on Multichip Modul
es ", pp. 230-241, or as to the chip carrier, Japanese Patent Laid-Open Nos. 62-2449429 and 63-63.
It is described in Japanese Patent Publication No. 310139. Also, the structure on the package substrate is Nikkei BP, December 1, 1990.
It is described on page 227 of "Nikkei Electronics" published on the 0th.

[0004]

However, in the above-mentioned prior art, the degree of integration of semiconductor chips and the circuit operating speed are being improved. Along with these, the amount of heat generated by the semiconductor chip during circuit operation tends to increase,
An important issue is how to efficiently release the heat generated from the semiconductor chip to the outside.

In order to deal with this, there is a method of directly immersing the chip carrier or the semiconductor chip in an inert liquid or a method of spraying.

Further, there is one in which cooling efficiency is improved by providing a radiation fin on the chip carrier or the semiconductor chip.

However, in the above-mentioned conventional technique, the ability to dissipate and cool the semiconductor chip, which will be further increased in power in the future, is insufficient and it cannot be applied to a large scale integrated circuit device. Therefore, more efficient cooling technique is required. There is.

Therefore, an object of the present invention is to provide a semiconductor integrated circuit device and a cooling method which improve the heat dissipation and cooling performance of a semiconductor chip and can be applied even when the power is increased.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0010]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, in the semiconductor integrated circuit device (chip carrier) according to the present invention, at least the upper surface of the cap constituting the chip carrier has a cooling medium flow in the same direction as the flow direction of the cooling medium jetted onto the upper surface of the cap. A passage groove is provided, or a cooling medium passage hole from the upper surface of the cap to the outside of the cap is
It is provided in the same direction as the flow path direction of the cooling medium.

Further, the cap is made of aluminum nitride.

Further, in the method for cooling the semiconductor integrated circuit device, an inert liquid or gas is jetted onto at least the upper surface of the cap.

[0014]

According to the above means, at least the upper surface of the cap constituting the chip carrier is provided with the cooling medium channel groove in the same direction as the channel direction of the cooling medium jetted to the upper surface of the cap, or The cooling medium flow passage hole from the upper surface of the cap to the outside of the cap is provided in the same direction as the flow passage direction of the cooling medium,
The cooling medium jetted onto the upper surface of the cap can be uniformly diffused through the cooling medium passage groove or the cooling medium passage hole without staying.

Therefore, the heat dissipation characteristic can be improved as compared with the conventional one.

[0016]

EXAMPLES Examples of the present invention will be described in detail below.

(Embodiment 1) FIG. 1 is a partial sectional view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) which is an embodiment of the present invention, and FIG. FIG. 3 is an external perspective view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) that is an example. Furthermore, FIG.
It is a sectional view showing an example of the structure of the module which mounts the semiconductor integrated circuit device (chip carrier) which is one example of the present invention.

First, the structure of the semiconductor integrated circuit device (chip carrier 1) according to the first embodiment will be described with reference to FIG. 1 on the electrode 3 on the main surface of the package substrate 2 made of a ceramic material such as mullite. The semiconductor chip 5 face-down bonded via the solder bumps 4 is hermetically sealed by a cap 6 in a package structure. The chip carrier 1 has a small external dimension of about vertical × horizontal = 10 to 14 mm × 10 to 14 mm, and may be referred to as a microchip carrier.

Here, as shown in FIGS. 1 and 2, on the upper surface of the cap 6 of the chip carrier 1, the cooling medium channel groove 20 is formed in the same direction as the channel direction of the cooling medium jetted for cooling. Are formed. That is, the cooling medium passage grooves 20 in the first embodiment are formed radially from the vicinity of the center of the upper surface of the cap 6 toward the outer peripheral portion of the cap 6, as shown in FIG.

Further, the solder bumps 4 are, for example, 1
It is composed of a Pb / Sn alloy containing about 5 to 5% by weight of Sn (melting temperature = about 320 to 330 ° C.). The cap 6 is made of high thermal conductive ceramic such as aluminum nitride (AlN), and its legs are soldered to the peripheral edge of the main surface of the package substrate 2 by the solder 7 for sealing.

A metallization layer 8 for improving the wettability of the sealing solder 7 is provided on each of the peripheral portion of the main surface of the package substrate 2 and the lower surface of the leg portion of the cap 6. These metallized layers 8 are, for example, T
It is composed of a composite alloy film formed by sputtering a thin film of i, Ni and Au.

Further, the back surface (upper surface) of the semiconductor chip 5 sealed in the cavity surrounded by the main surface of the package substrate 2 and the lower surface of the cap 6 is attached to the lower surface of the cap 6 by the heat transfer solder 9. It is soldered.
This is because the heat generated from the semiconductor chip 5 is transferred to the cap 6 via the heat transfer solder 9.

Here, in order to improve the wettability of the heat transfer solder 9, a metallization layer 8 is provided on the lower surface of the cap 6 at a position facing the back surface of the chip 5. The sealing solder 7 and the heat transfer solder 9 are made of, for example, a Pb / Sn alloy (melting temperature = about 290 to 300 ° C.) containing about 10 wt% Sn.

Furthermore, an internal wiring 10 made of, for example, W is formed on the inner layer of the package substrate 2, and the electrode 3 on the main surface side of the package substrate 2 is formed via this internal wiring 10.
And the electrode 3 on the lower surface side are electrically connected.

Next, referring to FIG. 2, the operation of the chip carrier 1 of the first embodiment will be described. On the upper surface of the cap 6 of the chip carrier 1, a cooling medium flow path jetted for cooling is formed. The cooling medium passage groove 20 is formed in the same direction as the direction. Here, when the inert liquid or gas that is the cooling medium is jetted onto the upper surface of the cap 6, it has a property of spreading radially from the vicinity of the center of the upper surface of the cap 6, and therefore, the cooling medium channel groove 20. Are formed radially in the same direction as the flow direction of the jetted cooling medium, that is, from the vicinity of the center of the upper surface of the cap 6 toward the outer peripheral portion of the cap 6 as shown in FIG.

Therefore, when an inert liquid or gas, which is a cooling medium, is jetted onto the upper surface of the cap 6, the cooling medium passage grooves 20 formed radially are formed from the vicinity of the center of the upper surface of the cap 6 to the cap. 6.

As a result, since the jetted cooling medium flows uniformly on the cap 6 without staying, the heat dissipation characteristic can be greatly improved.

Next, as shown in FIG. 3, the structure of the module in which the chip carrier 1 according to the present invention is mounted will be described. The module substrate 100 to which the chip carrier 1 is CCB-connected is a cooling medium into which a cooling medium is introduced. Inlet 310 and cooling medium outlet 320 through which cooling medium is discharged
And a module lid 200 including a jet port 210 to the chip carrier 1 and a partition plate 220 for partitioning the inlet side and the outlet side of the cooling medium.

Here, the operation when a cooling liquid such as fluorocarbon (FC-72, manufactured by 3M, boiling point 56 ° C.) is used as the cooling medium will be described. The fluorocarbon cooling liquid is introduced from the cooling medium inlet 310. It is introduced and further sprayed from the jet port 210 to the back surface of the chip carrier 1. After that, the fluorocarbon cooling liquid jet-filled in the module boils due to the heat generated from the chip carrier 1 due to its low boiling point, becomes vapor and is discharged from the cooling medium outlet 320 to the outside. The discharged vapor of the fluorocarbon cooling liquid is cooled and refined, then reintroduced from the cooling medium inlet 310 and circulated and reused.

Therefore, the semiconductor chip 5 (see FIG. 1)
It is possible to achieve a module structure by a cooling method having a high heat dissipation efficiency, realize a simple module structure, and simplify the assembly of the module structure.

(Embodiment 2) FIG. 4 is an external perspective view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) according to another embodiment of the present invention.

The structure of the chip carrier 1 according to the second embodiment will be described with reference to FIG. 4. The cap 6 connected to the package substrate 2 via the solder 7 for sealing includes the upper surface of the cap 6 and the outer surface. Medium flow passage hole 40 leading to
Are formed on the upper surface of the cap 6 in the same direction as the flow path of the cooling medium jetted for cooling. That is,
A hole 30 is provided near the center of the surface of the cap 6, and further passes through the inside of the cap 6 from the hole 30.
A plurality of radial cooling medium passage holes 40 are formed on the side surface of the cap 6 so as to escape to the outside.

Since the internal structure sealed by the cap 6 is exactly the same as that described in the first embodiment, the description thereof will be omitted.

Next, referring to FIG. 4, the operation of the chip carrier 1 of the second embodiment will be described. The cap 6 of the chip carrier 1 has a cooling medium passage hole extending from the upper surface of the cap 6 to the outside. 40 is formed on the upper surface of the cap 6 in the same direction as the flow direction of the cooling medium jetted for cooling. Here, when the inert liquid or gas as the cooling medium is jetted onto the upper surface of the cap 6, it has a property of spreading radially from the vicinity of the center of the upper surface of the cap 6, so that the cooling medium passage hole 40 is formed. Is the hole 30 provided in the same direction as the flow direction of the jetted cooling medium, that is, near the center of the upper surface of the cap 6, as shown in FIG.
Is a plurality of radial holes formed so as to pass through the inside of the cap 6 and to the outside on the side surface of the cap 6.

Therefore, when an inert liquid or gas that is a cooling medium is jetted onto the upper surface of the cap 6, the liquid or gas is further radiated through the hole 30 formed near the center of the upper surface of the cap 6. It passes through the cooling medium flow path hole 40 formed in the above and escapes to the outside at the side surface of the cap 6 and diffuses.

As a result, the jetted cooling medium flows uniformly in the cap 6 without staying, so that the heat dissipation characteristic can be greatly improved.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the cooling medium described in the first embodiment is fluorocarbon, but it may be another inert liquid or gas.

Further, the flow channel shape of the cooling medium provided in the cap may be a combination of the groove shape described in the first embodiment and the hole shape described in the second embodiment.

Further, the flow path shape of the cooling medium has only to be formed at least on the upper surface or inside of the cap. Therefore, on the surface of the cap, it is connected from the upper surface to the side surface of the cap. May be.

[0041]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

(1). Since the cooling medium passage groove or the cooling medium passage hole is provided in the cap of the semiconductor integrated circuit device (chip carrier), the cooling medium jetted into the cap does not stay in the cap and uniformly inside or inside the cap. Can flow Therefore, the cooling effect can be significantly improved.

(2). When the cap is made of aluminum nitride having excellent heat conductivity, the heat dissipation effect can be further improved.

(3). By using a cooling method in which the cooling medium is jetted directly to the cap of the chip carrier,
The cooling effect can be further enhanced.

(4). By using the semiconductor integrated circuit device and the cooling method according to the present invention, it is possible to realize a module having a multi-chip carrier and a simplified structure.

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) which is an embodiment of the present invention.

FIG. 2 is an external perspective view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) that is an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing an example of the structure of a module on which a semiconductor integrated circuit device (chip carrier) according to an embodiment of the present invention is mounted.

FIG. 4 is an external perspective view showing an example of the structure of a semiconductor integrated circuit device (chip carrier) according to another embodiment of the present invention.

[Explanation of symbols]

 1 Chip Carrier (Semiconductor Integrated Circuit Device) 2 Package Substrate 3 Electrode 4 Solder Bump 5 Semiconductor Chip 6 Cap 7 Sealing Solder 8 Metallization Layer 9 Heat Transfer Solder 10 Internal Wiring 20 Cooling Medium Channel Groove 30 Hole 40 Cooling Medium Flow path hole 100 Module substrate 200 Module lid 210 Jet port 220 Partition plate 310 Cooling medium inlet 320 Cooling medium outlet

Claims (4)

[Claims] 1. A semiconductor integrated circuit having a chip carrier structure in which a cap is fixed to a main surface of a package substrate to which a semiconductor chip is connected via solder bumps, and a back surface of the semiconductor chip is fixed to a lower surface of the cap. A semiconductor integrated circuit device, wherein a cooling medium channel groove is provided on at least the upper surface of the cap in the same direction as the channel direction of the cooling medium jetted onto the upper surface of the cap. 2. A semiconductor integrated circuit device having the structure according to claim 1, wherein a cooling medium passage hole extending from the upper surface of the cap to the outside of the cap is a cooling medium jetted onto the upper surface of the cap. A semiconductor integrated circuit device, which is provided in the same direction as a flow path direction. 3. The semiconductor integrated circuit device according to claim 1, wherein the cap is made of aluminum nitride. 4. A semiconductor integrated circuit having a chip carrier structure in which a cap is fixed to a main surface of a package substrate to which semiconductor chips are connected via solder bumps, and a back surface of the semiconductor chip is fixed to a lower surface of the cap. A cooling method for a device, wherein an inert liquid or gas is jetted onto at least the upper surface of the cap.