JPH0636809Y2 - Dental laser switching device - Google Patents

Dental laser switching device

Info

Publication number
JPH0636809Y2
JPH0636809Y2 JP1988133033U JP13303388U JPH0636809Y2 JP H0636809 Y2 JPH0636809 Y2 JP H0636809Y2 JP 1988133033 U JP1988133033 U JP 1988133033U JP 13303388 U JP13303388 U JP 13303388U JP H0636809 Y2 JPH0636809 Y2 JP H0636809Y2
Authority
JP
Japan
Prior art keywords
laser
light
laser beam
beams
adjusting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988133033U
Other languages
Japanese (ja)
Other versions
JPH0253714U (en
Inventor
研慥 片岡
彰 弓場
正樹 小高
茂隆 岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
J Morita Manufaturing Corp
Original Assignee
J Morita Manufaturing Corp
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Filing date
Publication date
Application filed by J Morita Manufaturing Corp filed Critical J Morita Manufaturing Corp
Priority to JP1988133033U priority Critical patent/JPH0636809Y2/en
Publication of JPH0253714U publication Critical patent/JPH0253714U/ja
Application granted granted Critical
Publication of JPH0636809Y2 publication Critical patent/JPH0636809Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Laser Surgery Devices (AREA)
  • Dental Tools And Instruments Or Auxiliary Dental Instruments (AREA)
  • Radiation-Therapy Devices (AREA)

Description

【考案の詳細な説明】 (産業上の利用分野) 本考案は特に歯科分野に用いられる医療用レーザ切換装
置、詳しくは750〜850ナノメータの波長域のレーザ光A
と、600〜740ナノメータのレーザ光Bとを夫々別個に発
生する2個の半導体レーザ(発生素子)を含み、いずれ
かのレーザ光の選択、両レーザ光の複合、及び両レーザ
光複合、のときにレーザ光Bを低出力域に制御してガイ
ド光としても利用し得るようにした医療用レーザ切換装
置に関し、この切換装置は2個のレーザ発生源と単一の
導光手段との間に配置される。
DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention is a medical laser switching device used particularly in the dental field, and more specifically, a laser beam A in the wavelength range of 750 to 850 nanometers.
And two semiconductor lasers (generating elements) that separately generate a laser beam B of 600 to 740 nanometers, respectively, selecting any one of the laser beams, combining both laser beams, and combining both laser beams. The present invention relates to a medical laser switching device in which the laser beam B is sometimes controlled to a low output range so that it can also be used as a guide beam. This switching device is provided between two laser sources and a single light guide means. Is located in.

(従来の技術) 歯科分野、その他の医療分野に於て各種レーザ光の照射
によって治療目的を達成していることは周知の所であ
る。半導体レーザも他のレーザ発生源と同様斯業分野で
の実用性が高まっているのはその高出力化、小型化、比
較的コスト安の由縁であり、今後の小型化、高出力化の
進展により、その実用範囲を更に増大する方向にある。
半導体レーザ医療装置の簡素化を図り、且つ異なるレー
ザ治療目的を達成する目的で、2つの半導体レーザより
のレーザ光を選択的もしくは複合的に単一の導光手段の
入射端に導光するようなレーザ切換装置が提案されてい
る。更に不可視光の治療用レーザ光源とは別個の光源よ
り可視光のガイド光を治療用レーザ光に複合することに
よって治療用のレーザ光照射の適確化を図った装置も提
案されている。
(Prior Art) It is well known that the purpose of treatment is achieved by irradiation with various laser beams in the dental field and other medical fields. Similar to other laser sources, semiconductor lasers are becoming more practical in the field because of their higher output, smaller size, and relatively lower cost. Therefore, the practical range is further increased.
In order to simplify a semiconductor laser medical device and achieve different laser treatment purposes, laser light from two semiconductor lasers is selectively or compositely guided to an incident end of a single light guide means. Various laser switching devices have been proposed. Further, an apparatus has been proposed in which a guide laser beam of visible light is combined with a laser beam for treatment by a light source different from a laser beam source for treatment of invisible light so as to optimize irradiation of the laser beam for treatment.

(考案が解決しようとする課題) 前記の2つの半導体レーザからのレーザ光を選択的もし
くは複合的に照射せしめるタイプの装置に於ては単一の
半導体レーザ、導光手段を含む個別な装置に較べて一つ
のアプリケータによって2種類のレーザ治療を選択的も
しくは複合的に達成し得る意味で装置の簡素化と治療の
範域の拡大に用益する。然し、治療用、処置用のレーザ
光は通常不可視光であり、レーザ照射部位を視認するこ
とが不可能である。レーザ光照射域を判別するためには
可視光のガイド光を複合させる必要があり、このために
別個に不可視光を内蔵させる必要がある。従来、かかる
可視光源としてHe−Neレーザーがよく用いられている
が、これは小型化が難しく、また交換寿命の比較的短い
ハロゲンランプや白熱電球を用いた場合には交換作業が
面倒となる。従来は、また、2つのレーザ光を効率よく
複合させるための位置合わせ、複合したレーザ光を単一
の導光手段の入射端に適正に導光するための光軸合わせ
等に於て十分な調節技術が提供されていない。
(Problems to be solved by the invention) In a device of the type that selectively or compositely irradiates the laser beams from the two semiconductor lasers described above, a single semiconductor laser and an individual device including a light guide means are provided. In comparison, in the sense that one type of applicator can achieve two types of laser treatment selectively or in combination, it is useful for simplifying the device and expanding the range of treatment. However, the laser light for treatment and treatment is usually invisible light, and it is impossible to visually recognize the laser irradiation site. In order to determine the laser light irradiation area, it is necessary to combine visible light guide light, and therefore it is necessary to separately incorporate invisible light. Conventionally, a He-Ne laser is often used as such a visible light source, but it is difficult to miniaturize it, and when a halogen lamp or an incandescent light bulb having a relatively short replacement life is used, the replacement work becomes troublesome. Conventionally, it is also sufficient in alignment for efficiently combining two laser beams, optical axis alignment for appropriately guiding the combined laser beams to the incident end of a single light guide means, and the like. No adjustment technology provided.

(課題を解決するための手段) 本考案は、上記に鑑みなされたもので、2つの半導体レ
ーザからのレーザ光を選択的もしくは複合的に照射せし
め、特に複合的照射の場合に一方のレーザ光をガイドビ
ーム光としても照射し得るようにすることによって、可
視光光源を別に設けることを不要とすること、両レーザ
光をレーザ光と直交する平面内において位置調整可能と
しながら、平行ビームとして複合させること、複合レー
ザ光を導光するについて導光光軸に直交する平面内にお
いて位置調整するようにしたこと・・・等を改良点とし
ている。
(Means for Solving the Problems) The present invention has been made in view of the above, and selectively or compositely irradiates laser light from two semiconductor lasers, and particularly in the case of composite irradiation, one laser light is emitted. By irradiating the laser beam as a guide beam light, it is not necessary to separately provide a visible light source, and both laser beams can be position-adjusted in a plane orthogonal to the laser beam while being combined as a parallel beam. The improved points are that the composite laser light is guided, and the position is adjusted in a plane orthogonal to the light guide optical axis.

以下に本考案の構成を実施例対応図について説明する
に; 第1図は、本考案装置の一実施例の骨子を線図をもって
示す説明図、第2図はこれを具体化した装置の正面図、
第3図は同平面図、第4図は第3図のIV−IV矢視面図、
第5図はダイクロイックミラー手段及びその回転位置調
整機構を示す斜視図、第6図はレーザ光調節用位置調整
機構と半導体レーザとの関連を示す断面図、第7図はレ
ーザ光調節用位置調整機構と導光手段の入光端との関係
を示す断面図、第8図は本考案の別の実施例の正面図、
第9図は同平面図、第10図は電気的切換制御手段のブロ
ック図を示すものである。
The structure of the present invention will be described below with reference to the drawings corresponding to the embodiments. FIG. 1 is an explanatory view showing the outline of one embodiment of the device of the present invention with a diagram, and FIG. 2 is a front view of the device embodying this. Figure,
FIG. 3 is the same plan view, FIG. 4 is the IV-IV arrow view of FIG. 3,
FIG. 5 is a perspective view showing the dichroic mirror means and its rotational position adjusting mechanism, FIG. 6 is a sectional view showing the relation between the laser light adjusting position adjusting mechanism and the semiconductor laser, and FIG. 7 is a laser light adjusting position adjusting. FIG. 8 is a sectional view showing the relationship between the mechanism and the light entrance end of the light guide means, FIG. 8 is a front view of another embodiment of the present invention,
FIG. 9 is a plan view of the same, and FIG. 10 is a block diagram of electric switching control means.

本考案は、750〜850ナノメータの波長域であって出力が
300mW以上のレーザ光Aを発生する半導体レーザと、600
〜740ナノメータの波長域のレーザ光Bを発生する半導
体レーザと、上記レーザ光Aを透過させるが上記レーザ
光Bを反射するダイクロイックミラー手段と、上記レー
ザ光Aの透過光及びレーザ光Bの反射光の双方に共通な
入射端子及び出射端子を有する導光手段と、上記A及び
Bの2種のレーザ光のいずれかもしくは両者の発生を選
択しかつ両者発生を選択の場合はレーザ光Bを3mW以上
の処置用出力と1mW以下のガイド光用出力のいずれかに
選択するレーザ光選択スイッチの選択信号に基づいて各
半導体レーザのレーザ発振駆動回路が制御される電気的
切換制御手段とにより構成した歯科用レーザ切換装置で
ある。
The present invention has a wavelength range of 750 to 850 nanometers and an output of
A semiconductor laser that generates a laser beam A of 300 mW or more, and 600
A semiconductor laser that generates a laser beam B in the wavelength range of ˜740 nanometers, a dichroic mirror unit that transmits the laser beam A but reflects the laser beam B, and a transmitted light of the laser beam A and a reflection of the laser beam B. A light guide unit having an incident terminal and an emission terminal common to both of the light and either or both of the two types of laser light A and B described above are selected, and when both generations are selected, the laser light B is selected. Consists of electrical switching control means for controlling the laser oscillation drive circuit of each semiconductor laser based on the selection signal of the laser light selection switch that selects either the treatment output of 3 mW or more and the output of the guide light of 1 mW or less This is a dental laser switching device.

レーザ光Aの出力は300mW以上、赤色可視光であるレー
ザ光Bの処置用レーザ光としての出力が3mW以上、ガイ
ド光bとしての出力が1mW以下である。レーザ光Aはそ
の波長と出力から主として組織の加温、凝固・止血、蒸
散・切開を処置の目的とし、レーザ光Bによる処置は虫
歯等の滅菌を目的とする。前記構成に加えて、本考案は
両レーザ光A,Bを夫々平行ビームとして出光するセルフ
ォック等の光学部材11,21、レーザ光AもしくはBの光
軸をレーザ光軸と直交する平面内でレーザ光を発する半
導体レーザ自体を位置調整する機構C、ダイクロイック
ミラー手段3を円周方向に回転し位置調整する機構D及
び導光手段4の入射端41を導光光軸に直交する平面内で
位置調整する機構Eを更に含む。なお、電気的切換制御
手段5は、第10図に示すとおり、レーザ光選択スイッチ
104によりA,Bのレーザ光の選択、複合及び設定された数
種の出力のスイッチの中から所望のレーザ光及び出力を
選択すると、その選択信号により切換制御回路103を介
してレーザ発振駆動回路の制御条件の切換制御が行わ
れ、フートスイッチ105をONにすると、夫々の半導体レ
ーザ1,2がレーザ発振駆動回路101,102により駆動される
ように構成されている。
The output of the laser light A is 300 mW or more, the output of the laser light B that is red visible light as the treatment laser light is 3 mW or more, and the output as the guide light b is 1 mW or less. The laser beam A is mainly used for treatment of tissue heating, coagulation / hemostasis, transpiration / dissection based on its wavelength and output, and the laser beam B is intended for sterilization of caries. In addition to the above-mentioned structure, the present invention provides an optical member 11 or 21, such as SELFOC, which emits both laser beams A and B as parallel beams, and a laser beam in a plane where the optical axis of the laser beam A or B is orthogonal to the laser beam axis. A mechanism C for adjusting the position of the semiconductor laser itself which emits light, a mechanism D for rotating and adjusting the position of the dichroic mirror means 3 in the circumferential direction, and an incident end 41 of the light guide means 4 positioned in a plane orthogonal to the light guide optical axis. The adjusting mechanism E is further included. The electrical switching control means 5 is, as shown in FIG. 10, a laser light selection switch.
When a desired laser light and output are selected from the switches of selection of A, B laser light, composite and several kinds of output by 104, a laser oscillation drive circuit is sent via the switching control circuit 103 by the selection signal. When the foot switch 105 is turned on, the semiconductor lasers 1 and 2 are driven by the laser oscillation drive circuits 101 and 102, respectively.

(作用) 上記構成よりなる本考案は2つの半導体レーザ1,2より
のレーザ光をもって(イ)A単独、(ロ)B(処置用)
単独、(ハ)A,B(処置用)複合、(ニ)A,b(ガイド
光)複合、以上4組の照射を可能とする。
(Operation) The present invention having the above-mentioned configuration uses the laser beams from the two semiconductor lasers 1 and 2 (a) A alone, (b) B (for treatment)
Irradiation of four sets is possible: single, (c) A, B (for treatment) combined, (d) A, b (guide light) combined.

このうち(ハ)A,B複合照射の場合は前述した2つの治
療内容である加温、凝固・止血、蒸散・切開及び滅菌が
達成され、(ニ)の場合はレーザ光Aによる治療、処置
についてガイド光bによる治療処置部位の視認が可能と
なる。この(イ)〜(ニ)の選択(及び制御)は上記し
た手段5によってなされる。歯科分野においてはレーザ
光Aの照射により、加温、凝固、止血、蒸散・切開の
他、根管治療、歯周治療、新材料開発に伴う補綴材料の
レーザ照射による光重合、細管封鎖、辺縁封鎖、光分析
による初期ウ蝕検出等が可能となり、レーザ光Bによっ
て、上記の治療部位に於ける滅菌が出来る。赤色のガイ
ド光bは上記の処置用のレーザ光Aと複合されて治療処
置の照射域の確認、視認を可能にする。そして本考案に
おいては、このガイド光bに、レーザ光Bの1mW以下の
低出力光を利用するので、ガイド光のための光源を別に
設ける必要がない。
Of these, in the case of (C) A and B combined irradiation, the above-mentioned two treatment contents of heating, coagulation / hemostatic, evaporation / dissection and sterilization are achieved, and in the case of (D), treatment and treatment by laser light A With respect to, it is possible to visually recognize the treatment treatment site by the guide light b. The selection (and control) of (a) to (d) is performed by the means 5 described above. In the field of dentistry, irradiation with laser light A causes heating, coagulation, hemostasis, transpiration and incision, as well as root canal treatment, periodontal treatment, photopolymerization of prosthesis materials with laser irradiation associated with the development of new materials, capillary blockage, Edge sealing, initial caries detection by optical analysis, etc. become possible, and the laser beam B enables sterilization at the treatment site. The red guide light b is combined with the above-mentioned laser light A for treatment to enable confirmation and visual confirmation of the irradiation area of the treatment treatment. In the present invention, since the guide light b uses a low output light of 1 mW or less of the laser light B, it is not necessary to separately provide a light source for the guide light.

光学部材(セルフォック等)11,12によってレーザ光A,B
を平行ビームとして出光すれば夫々のビームの焦点合わ
せや複合時の光学的調整がやり易くなり、レーザ光Aも
しくはBのいずれかの光軸をレーザ光軸に直交する平面
内において半導体レーザ自体を位置調整する機構Cの適
用により、一方のレーザ光との複合時の位置調整が容易
となり、更に一方のレーザ光に対して斜交角を調整する
ダイクロイックミラー手段3の回転位置調整機構Dの協
働によって両レーザ光A,Bの適正な複合を保証する。そ
して複合レーザ光A,Bを入射端41に導光せしめる際に導
光光軸に直交する平面内で調整する機構Eの採用により
効率の良いレーザ伝送を可能とする。
Laser light A, B by optical members (SELFOC, etc.) 11,12
If the light is emitted as a parallel beam, it becomes easy to focus each beam and perform optical adjustment at the time of compounding, and the semiconductor laser itself is set in a plane in which either the optical axis of the laser light A or B is orthogonal to the laser optical axis. Application of the position adjusting mechanism C facilitates position adjustment when combined with one laser beam, and further cooperates with the rotational position adjusting mechanism D of the dichroic mirror means 3 for adjusting the oblique angle with respect to one laser beam. This ensures the proper combination of both laser lights A and B. Then, when the composite laser beams A and B are guided to the incident end 41, the mechanism E that adjusts in the plane orthogonal to the guided optical axis enables efficient laser transmission.

(実施例) 実施例図の第2図乃至第9図は歯科用レーザ治療装置と
組み合わせたレーザ切換装置を示している。この内第2
図乃至第7図で示す第1実施例の装置は電気的切換制御
装置5、半導体レーザ1,2、一方の光軸をレーザ光に直
交する平面内で半導体レーザ自体の位置を調整する機構
C、半導体レーザ1よりのレーザ光Aを透過するが他の
レーザ光Bを反射して両レーザ光A,Bを複合して導光手
段4の入射端41へ導光するダイクロイックミラー3、こ
の手段3を回転位置調整して両レーザ光A,Bの光軸に対
してミラーの斜交角を整合するための機構D及び上記入
射端41をレーザ光に直交する平面内で位置合わせして伝
送レーザ光の光軸と調整する機構Eより構成されてい
る。詳しくは半導体レーザ1、2の夫々の先側には平行
ビーム形成用のセルフォック11、21を備え、この例では
半導体レーザ2はセルフォック21と共に半導体レーザ2
の位置調整機構Cに内設されて、その光軸がレーザ光と
直交する平面内でX,Y方向に位置調整されるようになっ
ているが、他方の半導体レーザ1は調整不能な固定関係
となっている。ダイクロイックミラー手段3はフランジ
31を有する円柱体32と、この円柱体32の周体の半導体レ
ーザ1と入射端41に向面した部位に直状に貫設した透孔
34及び半導体レーザ2に向位して、この透孔34に至る短
孔33及び円柱体32に斜めに設けられた溝孔351に嵌支さ
れたダイクロイックミラー35よりなり、回転調整機構D
はフランジ31の周体の直径対応位に穿設された円弧溝3
6、基台7上に植立されて、この円弧溝36内に嵌入され
たピン37、このピン37にねじ合される固定ボルト38及び
上記円柱体32にねじ込まれた操作杆39とよりなる。この
構成からダイクロイックミラー手段3を回転調整するに
は固定ボルト38を緩めて操作杆39を指先で回転すればピ
ン37が円弧溝36内で移動し得る範囲内で位置調整し得る
ことが明らかである。単一の導光手段4の入射端41も導
光光軸に直交する平面内でX,Y方向に位置調整するX,Y位
置調整機構Eによって光軸合わせ可能となっており、こ
の機構E及び前記の機構Cは全く同一の調整機構を用い
ている。これを機構Cについて説明すると、一枚の固定
板22、この固定板22にX,Y方向両に摺動可能な摺動板2
3、この摺動板23に連結板24を介して連結固定される別
の摺動板25を含み上記摺動板23にはX−X方向について
一方向性の弾力付与部材26、同じくY−Y方向について
も一方向性の弾力付与部材27が夫々接触し、夫々の部材
26,27の作用線上の反対側には調整ねじ杆28,29が夫々摺
動板23の他側に接触的に設けられて、上記部材26,27の
弾力に拮抗している。半導体レーザ2及びセルフォック
21は、上記機構Cに組み込まれていて第6図の如く半導
体レーザ2は摺動板23,25、連結板24及び固定板22を貫
設した取付孔211内に収納され、取付金具212、絶縁体21
3及び抑え具214を介して取付られている。
(Embodiment) FIGS. 2 to 9 of the embodiment show a laser switching device combined with a dental laser treatment device. The second of these
The apparatus of the first embodiment shown in FIGS. 7 to 7 is an electrical switching control device 5, semiconductor lasers 1 and 2, and a mechanism C for adjusting the position of the semiconductor laser itself in a plane in which one optical axis is orthogonal to the laser light. , A dichroic mirror 3 which transmits the laser light A from the semiconductor laser 1 but reflects the other laser light B and combines the two laser lights A and B to guide them to the incident end 41 of the light guide means 4. A transmission laser in which a mechanism D for adjusting the oblique position of the mirror with respect to the optical axes of the two laser beams A and B by adjusting the rotational position of 3 and the incident end 41 are aligned in a plane orthogonal to the laser beam. It is composed of a mechanism E for adjusting the optical axis of light. Specifically, the semiconductor lasers 1 and 2 are provided with self-locks 11 and 21 for forming parallel beams on the respective front sides, and in this example, the semiconductor laser 2 together with the self-lock 21 is the semiconductor laser 2.
The position adjustment mechanism C is installed in the position adjustment mechanism C to adjust the position in the X and Y directions in a plane whose optical axis is orthogonal to the laser light, but the other semiconductor laser 1 is a non-adjustable fixed relationship. Has become. The dichroic mirror means 3 is a flange
A cylindrical body 32 having 31 and a through hole formed directly through the peripheral body of the cylindrical body 32 facing the semiconductor laser 1 and the incident end 41.
The rotation adjusting mechanism D comprises a short hole 33 facing the through hole 34 and the semiconductor laser 2, and a dichroic mirror 35 fitted in a groove hole 351 obliquely provided in the cylindrical body 32.
Is an arc groove 3 drilled at the diameter corresponding to the circumference of the flange 31.
6, a pin 37 that is planted on the base 7 and is fitted into the arc groove 36, a fixing bolt 38 that is screwed into the pin 37, and an operating rod 39 that is screwed into the cylindrical body 32. . From this configuration, it is apparent that in order to rotationally adjust the dichroic mirror means 3, if the fixing bolt 38 is loosened and the operating rod 39 is rotated with a fingertip, the position can be adjusted within a range in which the pin 37 can move in the circular arc groove 36. is there. The incident end 41 of the single light guiding means 4 can also be aligned with the optical axis by an X, Y position adjusting mechanism E for adjusting the position in the X, Y directions in a plane orthogonal to the light guiding optical axis. And the above mechanism C uses exactly the same adjusting mechanism. This will be described about the mechanism C. One fixed plate 22 and a sliding plate 2 that can slide on the fixed plate 22 in both the X and Y directions.
3. The slide plate 23 includes another slide plate 25 connected and fixed to the slide plate 23 via a connecting plate 24, and the slide plate 23 has a unidirectional elastic force imparting member 26 in the XX direction, and also Y-. Also in the Y direction, the unidirectional elastic force imparting members 27 come into contact with each other, and
Adjusting screw rods 28 and 29 are provided in contact with the other side of the sliding plate 23 on the opposite sides of the lines of action of the 26 and 27, respectively, and counteract the resilience of the members 26 and 27. Semiconductor laser 2 and SELFOC
Reference numeral 21 is incorporated in the mechanism C, and the semiconductor laser 2 is housed in a mounting hole 211 penetrating the sliding plates 23, 25, the connecting plate 24 and the fixed plate 22 as shown in FIG. Insulator 21
It is attached via 3 and the restraint 214.

この構成から半導体レーザ2よりのレーザ光軸のX,Y両
方向の位置調整は調整ねじ杆28,29を螺進・螺退するこ
とによってなされることは容易に理解されよう。機構E
も上記と全く同一の構成、操作であるからここでは説明
を割愛して対応符号を入れておくにとどめる。導光手段
4の入射端41の詳細は第7図に示す如く、ファイバーシ
ース46の入射端が機構Eの固定板42、摺動板43、連結板
44、摺動板45に貫設した取付孔411内に収納され取付金
具412によって保持され、更にシース46に内蔵されたフ
ァイバfの端部にファイバ固定具gによってシース43端
部に同軸的に固定されている。一方ファイバfの先側に
はレンズホールダ47が取付金具412内に嵌装され別の取
付金具412とテーパ部材417によって摺動板45に締着さ
れ、このホールダ47の後側には先向テーパ受461が設け
られ、取付金具412とこのホールダ47との間には縮設ス
プリング418が圧嵌されてホールダ47を常時後側に付勢
しファイバfの入射端41が上記テーパ受461の収納部462
にテーパ部材417と嵌合し合心的に保持されている。ホ
ールダ47の内部にはレーザ光をしてファイバfの入射端
41に焦点を結ばせるためのレンズ419及びこのレンズ419
を固定保持するためのレンズ抑え具491が該ホールダ47
の先側よりねじ込まれている。この構成より調整ねじ杆
48,49をX,Yの夫々の方向に累進・螺退することによって
ファイバfの入射端41を導光光軸に直交する面域内でX,
Y方向に位置調整し得る。また、ファイバ入射端41は先
向テーパ受461とテーパ部材417とによってレンズホール
ダ47の中心に適確に保持されること、導光レーザがこの
入射端41に焦点を併せて伝達ロスを少なくして伝送され
ることも容易に理解され得るであろう。また、第8図と
第9図に示すものは本考案の別の実施例を示すもので先
に述べた実施例とは位置調整機構Eのみが異なっている
だけであり、この他の構成の説明は割愛する。
From this configuration, it is easily understood that the position adjustment of the laser optical axis from the semiconductor laser 2 in both X and Y directions is performed by screwing and unscrewing the adjusting screw rods 28 and 29. Mechanism E
Also, since the configuration and operation are exactly the same as those described above, the description is omitted here and only corresponding symbols are put. The details of the incident end 41 of the light guide means 4 are as shown in FIG. 7, where the incident end of the fiber sheath 46 is the fixed plate 42, the sliding plate 43, and the connecting plate of the mechanism E.
44, coaxially with the end of the sheath 43 by the fiber fixing tool g at the end of the fiber f housed in the mounting hole 411 penetrating the sliding plate 45 and held by the fitting 412. It is fixed. On the other hand, on the front side of the fiber f, the lens holder 47 is fitted in the mounting bracket 412 and is fastened to the sliding plate 45 by another mounting bracket 412 and the taper member 417. A receiver 461 is provided, and a compression spring 418 is press-fitted between the mounting bracket 412 and the holder 47 to constantly urge the holder 47 to the rear side so that the incident end 41 of the fiber f is stored in the taper receiver 461. Part 462
Is fitted to the taper member 417 and held concentrically. Inside the holder 47, laser light is emitted and the incident end of the fiber f is
Lens 419 for focusing on 41 and this lens 419
The lens retainer 491 for fixing and holding the
Is screwed in from the front side of. With this configuration, the adjusting screw rod
By making 48 and 49 progressive and screw back in the X and Y directions, respectively, the incident end 41 of the fiber f is moved in the plane area orthogonal to the light guide optical axis by X,
The position can be adjusted in the Y direction. Further, the fiber incident end 41 is properly held at the center of the lens holder 47 by the forward tapered receiver 461 and the taper member 417, and the light guide laser focuses on the incident end 41 to reduce the transmission loss. It can be easily understood that the data is transmitted as a transmission. Further, FIGS. 8 and 9 show another embodiment of the present invention, which is different from the above-mentioned embodiment only in the position adjusting mechanism E. I will omit the explanation.

この第8図と第9図に示す位置調整機構Eは軸71を中心
として回転自在とされたブロック体70に取着された全反
射ミラー7を上下に設けた傾動調節ネジ72の螺進、螺退
により角度調整可能とする機構及び、更に保持枠8内で
導光手段を保持した移動ブロック82をネジ81の螺進、螺
退によりレーザ光軸に直交する面域内でX−Y方向に移
動可能とした機構とより構成される。
The position adjusting mechanism E shown in FIGS. 8 and 9 has a tilt adjusting screw 72 provided with a total reflection mirror 7 attached to a block body 70 which is rotatable about an axis 71 and which is vertically installed. A mechanism that allows the angle to be adjusted by screwing back and forth, and a moving block 82 that holds the light guide means in the holding frame 8 is further advanced in the X-Y directions within the surface area orthogonal to the laser optical axis by screwing and screwing the screw 81. It is composed of a movable mechanism.

なお、導光手段の先側にファイバfの出光端42があるこ
とは説明する迄もない。レーザ冷却部6は放熱用フィン
k、放熱ペルチェ素子lを夫々含んでいる。
Needless to say, there is the light output end 42 of the fiber f on the front side of the light guide means. The laser cooling unit 6 includes a heat radiation fin k and a heat radiation Peltier element l, respectively.

(考案の効果) 叙述の説明から明らかなように、本考案による時は2つ
の半導体レーザより2種類のレーザ光A,Bのいずれかも
しくは両者を照射し得るのはもちろん、両者照射の場合
レーザ光Bを処置用レーザ光として利用できるだけでは
なく、ガイド光bとしても利用出来るので、別個に可視
光源を設置する必要がなく装置を簡素化でき、光源交換
の煩わしさからも解放される。また、直交X,Y方向の位
置微調整機構の適用により、レーザ光A,Bの整合的反
射、複合及び導光が可能となり効率のよいレーザ伝送を
可能とする。
(Effect of the Invention) As is clear from the above description, according to the present invention, it is possible to irradiate either or both of the two kinds of laser light A and B from the two semiconductor lasers, and in the case of both irradiations, the laser Since the light B can be used not only as the treatment laser light but also as the guide light b, there is no need to separately install a visible light source, the apparatus can be simplified, and the trouble of exchanging the light source is released. Further, by applying the position fine adjustment mechanism in the orthogonal X and Y directions, the laser beams A and B can be consistently reflected, combined, and guided, which enables efficient laser transmission.

従って、本考案は既述した歯科分野でのレーザ治療に夫
々用益する所顕著である。
Therefore, the present invention is remarkable in that it is useful for the laser treatment in the dental field as described above.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本考案装置の一実施例の骨子を線図をもって
示す説明図、第2図はこれを具体的した装置の正面図、
第3図は同平面図、第4図は第3図IV−IV矢視図、第5
図はダイクロイックミラー手段及びその回転位置調整機
構を示す斜視図、第6図はX,Y位置調整機構と半導体レ
ーザとの関連を示す断面図、第7図はX,Y位置調整機構
と導光手段の入光端との関係を示す断面図、第8図は本
考案の別の実施例の正面図、第9図は同平面図、第10図
は電気的切換制御手段を示すブロック図を表すものであ
る。 (符号の説明) 1,2…半導体レーザ、3…ダイクロイックミラー手段、
4…導光手段、41…入射端、5…電気的切換制御手段、
A,B…レーザ光、b…ガイド光、C,E…直交X,Y方向の位
置調整機構、D…ダイクロイックミラー手段の回転位置
調整機構。
FIG. 1 is an explanatory view showing the outline of one embodiment of the device of the present invention with a diagram, and FIG. 2 is a front view of the device embodying this.
FIG. 3 is a plan view of the same, FIG. 4 is a view of FIG.
FIG. 7 is a perspective view showing the dichroic mirror means and its rotational position adjusting mechanism, FIG. 6 is a sectional view showing the relationship between the X, Y position adjusting mechanism and the semiconductor laser, and FIG. 7 is an X, Y position adjusting mechanism and light guiding. FIG. 8 is a sectional view showing the relationship with the light entrance end of the means, FIG. 8 is a front view of another embodiment of the present invention, FIG. 9 is a plan view of the same, and FIG. 10 is a block diagram showing electric switching control means. To represent. (Explanation of symbols) 1, 2 ... Semiconductor laser, 3 ... Dichroic mirror means,
4 ... Light guide means, 41 ... Incident end, 5 ... Electrical switching control means,
A, B ... Laser light, b ... Guide light, C, E ... Orthogonal X, Y direction position adjusting mechanism, D ... Dichroic mirror means rotational position adjusting mechanism.

───────────────────────────────────────────────────── フロントページの続き (72)考案者 岸 茂隆 京都府京都市伏見区東浜南町680 株式会 社モリタ製作所内 (56)参考文献 特開 昭62−254117(JP,A) 特開 昭59−194733(JP,A) 特開 昭62−266049(JP,A) 特開 昭58−79783(JP,A) 特公 昭55−22097(JP,B2) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Shigeru Kishi 680 Morita Manufacturing Co., Ltd. 680 Higashihaman-cho, Fushimi-ku, Kyoto-shi, Kyoto (56) References JP 62-254117 (JP, A) JP 59- 194733 (JP, A) JP 62-266049 (JP, A) JP 58-79783 (JP, A) JP 55-22097 (JP, B2)

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】750〜850ナノメータの波長域であって出力
が300mW以上のレーザ光Aを発生する半導体レーザと、6
00〜740ナノメータの波長域のレーザ光Bを発生する半
導体レーザと、上記レーザ光Aを透過させるが上記レー
ザ光Bを反射するダイクロイックミラー手段と、上記レ
ーザ光Aの透過光及びレーザ光Bの反射光の双方に共通
な入射端及び出射端を有する導光手段と、上記A及びB2
種のレーザ光のいずれかもしくは両者の発生を選択しか
つ両者発生を選択の場合はレーザ光Bを3mW以上の処置
用出力と1mW以下のガイド光用出力のいずれかに選択す
るレーザ光選択スイッチの選択信号に基づいて各半導体
レーザのレーザ発振駆動回路が制御される電気的切換制
御手段とにより構成した歯科用レーザ切換装置。
1. A semiconductor laser which emits laser light A having an output of 300 mW or more in a wavelength range of 750 to 850 nanometers, and 6.
A semiconductor laser for generating a laser beam B in the wavelength range of 00 to 740 nanometers, a dichroic mirror means for transmitting the laser beam A but reflecting the laser beam B, and a transmitted light of the laser beam A and a laser beam B. A light guiding means having an incident end and an emitting end common to both of the reflected light;
A laser light selection switch for selecting either or both of the two kinds of laser light and selecting both of them for selecting the laser light B to either the treatment output of 3 mW or more and the guide light output of 1 mW or less. A laser switching device for controlling a laser oscillation drive circuit of each semiconductor laser based on the selection signal of 1.
【請求項2】両レーザ光を夫々平行ビームとして出光す
る光学部材、いずれかのレーザ光の光軸に直交する平面
内でレーザ光を発する半導体レーザ自体の位置を調整す
る機構、ダイクロイックミラーを円周方向に回転位置調
整する機構及び導光手段の入射端を導光光軸に直交する
平面内で位置調整する機構を更に含む請求項1記載の歯
科用レーザ切換装置。
2. An optical member for emitting both laser beams as parallel beams, a mechanism for adjusting the position of the semiconductor laser itself for emitting the laser beams in a plane orthogonal to the optical axis of one of the laser beams, and a dichroic mirror. The dental laser switching device according to claim 1, further comprising a mechanism for adjusting the rotational position in the circumferential direction and a mechanism for adjusting the position of the incident end of the light guide means in a plane orthogonal to the light guide optical axis.
JP1988133033U 1988-10-11 1988-10-11 Dental laser switching device Expired - Lifetime JPH0636809Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988133033U JPH0636809Y2 (en) 1988-10-11 1988-10-11 Dental laser switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988133033U JPH0636809Y2 (en) 1988-10-11 1988-10-11 Dental laser switching device

Publications (2)

Publication Number Publication Date
JPH0253714U JPH0253714U (en) 1990-04-18
JPH0636809Y2 true JPH0636809Y2 (en) 1994-09-28

Family

ID=31390540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988133033U Expired - Lifetime JPH0636809Y2 (en) 1988-10-11 1988-10-11 Dental laser switching device

Country Status (1)

Country Link
JP (1) JPH0636809Y2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006019127A1 (en) * 2006-04-25 2007-10-31 Carl Zeiss Meditec Ag Multi-wavelength laser system and method for ophthalmic applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2833568C2 (en) * 1978-07-31 1987-02-12 Akzo Gmbh, 5600 Wuppertal Porous threads
JPS59194733A (en) * 1983-04-20 1984-11-05 東北リコ−株式会社 Semiconductive laser blood vessel inosculating apparatus
JPS62254117A (en) * 1986-04-28 1987-11-05 Nippon Sekigaisen Kogyo Kk Coaxial irradiating device for laser light of different kind
JPS62266049A (en) * 1986-05-14 1987-11-18 オリンパス光学工業株式会社 Laser probe

Also Published As

Publication number Publication date
JPH0253714U (en) 1990-04-18

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