JPH0638436B2 - Method of joining semiconductor pellet and substrate - Google Patents
Method of joining semiconductor pellet and substrateInfo
- Publication number
- JPH0638436B2 JPH0638436B2 JP60033949A JP3394985A JPH0638436B2 JP H0638436 B2 JPH0638436 B2 JP H0638436B2 JP 60033949 A JP60033949 A JP 60033949A JP 3394985 A JP3394985 A JP 3394985A JP H0638436 B2 JPH0638436 B2 JP H0638436B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor pellet
- substrate
- adhesive
- terminal portion
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07231—Techniques
- H10W72/07236—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 この発明は半導体ペレットと基板の接合方法に関するも
のである。TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for joining a semiconductor pellet and a substrate.
ICペレット等の半導体ペレットを基板に取付ける方法
としては、一般に、半導体ペレットのバンプと基板の端
子部とをワイヤボンディングにより接続する方法が採用
されているが、この方法では、ワイヤボンディングに時
間がかかるだけでなく、ボンディングワイヤも高価であ
るために、かなりコスト高となるから、最近では半導体
ペレットのバンプを直接基板の端子部に接続する方法が
検討されている。As a method of attaching a semiconductor pellet such as an IC pellet to a substrate, a method of connecting a bump of the semiconductor pellet and a terminal portion of the substrate by wire bonding is generally adopted, but in this method, wire bonding takes time. In addition, since the bonding wire is also expensive, the cost is considerably high. Therefore, recently, a method of directly connecting the bump of the semiconductor pellet to the terminal portion of the substrate has been studied.
半導体ペレットのバンプを直接基板の端子部に接続する
半導体ペレットと基板の接合方法としては、従来、半導
体ペレットと、この半導体ペレットの各バンプに対応す
る端子部が形成された基板とを、その接合面に異方導電
性接着剤を介在させて相対的に押圧することにより、半
導体ペレットと基板とを前記異方導電性接着剤によって
接着接合する方法が考えられている。As a method for joining a semiconductor pellet and a substrate in which the bumps of the semiconductor pellet are directly connected to the terminal portion of the substrate, a semiconductor pellet and a substrate on which a terminal portion corresponding to each bump of the semiconductor pellet is formed are joined together. A method has been considered in which the semiconductor pellet and the substrate are bonded and bonded with the anisotropic conductive adhesive by interposing an anisotropic conductive adhesive on the surface and relatively pressing.
なお、前記異方導電性接着剤は、絶縁性接着剤中に導電
性粒子を、導電性粒子同志が互いに接触し合わないよう
な割合で混入したもので、この異方導電性接着剤からな
る接着剤層は、厚さ方向には導通性を示すが面方向(横
方向)には絶縁性をもっているから、半導体ペレットと
基板との接合面に異方導電性接着剤を介在させて半導体
ペレットと基板とを相対的に押圧すると、半導体ペレッ
トの各バンプと基板の各端子部とが導通接続(導電性粒
子を介して導通接続)される。The anisotropic conductive adhesive is a mixture of electrically conductive particles in an insulating adhesive in such a ratio that the conductive particles do not contact each other, and is made of this anisotropic conductive adhesive. The adhesive layer has conductivity in the thickness direction but has insulation in the surface direction (lateral direction), so that the anisotropic conductive adhesive is interposed between the semiconductor pellet and the substrate to form a semiconductor pellet. When the and the substrate are pressed relative to each other, the bumps of the semiconductor pellet and the terminal portions of the substrate are electrically connected (electrically connected through conductive particles).
しかしながら、上記のように異方導電性接着剤によって
半導体ペレットと基板とを接着接合する方法では、半導
体ペレットの各バンプと基板の各端子部との全てが必ず
導通接続されるとは限らず、そのために信頼性が悪いと
いう問題をもっていた。However, in the method of adhesively bonding the semiconductor pellet and the substrate by the anisotropic conductive adhesive as described above, not all the bumps of the semiconductor pellet and each terminal portion of the substrate are necessarily electrically connected, Therefore, it had a problem of poor reliability.
これは、前記異方導電性接着剤の導電性粒子の分布が不
規則にばらついているためであり、これに対して半導体
ペレットの各バンプの巾は非常に狭いから、異方導電性
接着剤にその導電性粒子の間隔が前記バンプの巾より広
くなっている箇所があってこの箇所に半導体ペレットの
バンプがたまたま対応すると、この部分のバンプと基板
の端子部との間には導電性粒子が介在されずにこのバン
プと端子部とが導通接続されない状態になる。なお、異
方導電性接着剤中の導電性粒子の混入比を多くしてやれ
ば、導電性粒子の間隔も小さくなるから、全てのバンプ
と端子部とをほぼ確実に導通接続することができるが、
このように異方導電性接着剤中の導電性粒子の混入比を
多くすると、導電性粒子の間隔が密になっている部分で
導電性粒子同志が接触し合って隣接するバンプ同志を短
絡させてしまうことになる。This is because the distribution of the conductive particles of the anisotropic conductive adhesive varies irregularly, whereas the width of each bump of the semiconductor pellet is very narrow, so the anisotropic conductive adhesive There is a place where the spacing of the conductive particles is wider than the width of the bump, and the bump of the semiconductor pellet happens to correspond to this place, and the conductive particle is placed between the bump of this part and the terminal part of the substrate. The bumps and the terminal portions are not electrically connected to each other without the interposition of. Incidentally, if the mixing ratio of the conductive particles in the anisotropic conductive adhesive is increased, the intervals between the conductive particles also become smaller, so that all the bumps and the terminal portions can be almost certainly conductively connected.
When the mixing ratio of the conductive particles in the anisotropic conductive adhesive is increased in this way, the conductive particles come into contact with each other at a portion where the conductive particles are closely spaced to short-circuit adjacent bumps. Will be lost.
また、上記異方導電性接着剤によって半導体ペレットと
基板とを接着接合する方法は、半導体ペレットまたは基
板の接合面に異方導電性接着剤を塗布して半導体ペレッ
トと基板とを押圧することで半導体ペレットのバンプと
基板の端子部とを導通接続することができるから、短時
間で半導体ペレットと基板とを接合することができ、従
ってワイヤボンディングによる方法に比べればある程度
はコストを下げることができるが、それでも、異方導電
性接着剤が高価であるために、大巾なコストダウンはは
かれなかった。Further, the method of adhesively bonding the semiconductor pellet and the substrate with the anisotropic conductive adhesive is a method of applying the anisotropic conductive adhesive to the bonding surface of the semiconductor pellet or the substrate and pressing the semiconductor pellet and the substrate. Since the bumps of the semiconductor pellet and the terminal portion of the substrate can be electrically connected, the semiconductor pellet and the substrate can be joined in a short time, and thus the cost can be reduced to some extent as compared with the method of wire bonding. However, since the anisotropic conductive adhesive is expensive, the cost cannot be drastically reduced.
この発明は上記のような実情にかんがみてなされたもの
であって、その目的とするところは、異方導電性接着剤
によって半導体ペレットと基板とを接着接合する方法と
同程度の短い時間で能率よく半導体ペレットと基板とを
接合することができるとともに、半導体ペレットと基板
とを導通不良部分を生ずることなく確実に導通接続する
ことができ、しかも異方導電性接着剤を用いる方法より
もさらにコストを低減することができる半導体ペレット
と基板の接合方法を提供することにある。The present invention has been made in view of the circumstances as described above, and its purpose is to achieve efficiency in a short time comparable to the method of adhesively bonding a semiconductor pellet and a substrate with an anisotropic conductive adhesive. The semiconductor pellet and the substrate can be bonded well, and the semiconductor pellet and the substrate can be surely conductively connected to each other without causing a defective conduction portion, and the cost is higher than the method using the anisotropic conductive adhesive. It is an object of the present invention to provide a method for joining a semiconductor pellet and a substrate, which can reduce the above-mentioned problem.
すなわち、この発明は、端子部を除く主面に保護膜が形
成された半導体ペレットと、この半導体ペレットの端子
部に対応する端子部が形成された基板とを、その両方の
端子部が対向する部分を含む接合面に絶縁性接着剤を介
在させて相対的に押圧し、この押圧力により前記端子部
間の前記接着剤をこの端子部間の外側に押出して前記両
方の端子部を導通接続させるとともに、前記接着剤によ
り前記半導体ペレットと前記基板とを接着する接合方法
であって、前記半導体ペレットの端子部を前記保護膜の
上面より陥入するものとし、且つ前記基板の端子部を前
記半導体ペレットの端子部よりも巾狭となしたものであ
り、この発明は、半導体ペレットと基板とを、その両方
の両端子部が対向する部分を含む接合面に介在させた絶
縁性接着剤で接着接合するものであるから、異方導電性
接着剤によって半導体ペレットと基板とを接着接合する
方法と同程度の短い時間で能率よく半導体ペレットと基
板とを接合することができるし、また、半導体ペレット
と基板との両方の端子部をその間の絶縁性接着剤を外側
に押出すことによって直接導通接続させるようにしてい
るために、異方導電性接着剤を使用する方法のように異
方導電性接着剤中の導電性粒子の分布のばらつきによる
導通不良部分を生ずることもなく、さらに、前記絶縁性
接着剤は異方導電性接着剤に比べてかなり安価であるか
ら、異方導電性接着剤を用いる方法よりもさらにコスト
を低減することができる。That is, according to the present invention, a semiconductor pellet having a protective film formed on the main surface excluding the terminal portion and a substrate having a terminal portion corresponding to the terminal portion of the semiconductor pellet have both terminal portions facing each other. An insulating adhesive is interposed between the joint surfaces including the parts to relatively press the adhesive, and the pressing force pushes the adhesive between the terminals to the outside between the terminals to electrically connect both terminals. And a bonding method for bonding the semiconductor pellet and the substrate with the adhesive, wherein the terminal portion of the semiconductor pellet is recessed from the upper surface of the protective film, and the terminal portion of the substrate is The semiconductor pellet has a width narrower than that of the terminal portion, and the present invention is an insulating adhesive in which the semiconductor pellet and the substrate are interposed on a joint surface including a portion where both terminal portions of both are opposed to each other. Adhesion Therefore, the semiconductor pellet and the substrate can be efficiently joined in a short time comparable to the method of adhering and joining the semiconductor pellet and the substrate with the anisotropic conductive adhesive, and the semiconductor pellet can also be joined. Since both terminals of the board and the board are directly connected to each other by extruding the insulating adhesive between them, the anisotropic conductive adhesive is used like the method using the anisotropic conductive adhesive. There is no occurrence of defective conduction due to uneven distribution of conductive particles in the adhesive. Further, since the insulating adhesive is considerably cheaper than the anisotropic conductive adhesive, the anisotropic conductive adhesive The cost can be further reduced as compared with the method using.
以下、この発明の一実施例を図面を参照して説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図において、1は半導体ペレット(例えばICペレ
ット)であり、この半導体ペレット1の主面には、その
外周に沿わせて多数の端子部2,2,…が配列され、ま
たこの半導体ペレット1の主面には、前記端子部2,
2,…を除いて、絶縁性の保護膜3が主面全面にわたっ
て形成されている。なお、この半導体ペレット1は、例
えば一辺の長さが4mmの方形で厚さが0.3mmのもの
で、各端子部は0.1〜0.5mmのピッチで配列されて
いる。In FIG. 1, reference numeral 1 denotes a semiconductor pellet (for example, an IC pellet), and on the main surface of the semiconductor pellet 1, a large number of terminal portions 2, 2, ... Are arranged along the outer periphery thereof. On the main surface of 1, the terminal portion 2,
Insulating protective film 3 is formed over the entire main surface except 2 ,. The semiconductor pellet 1 is, for example, a rectangle having a side length of 4 mm and a thickness of 0.3 mm, and the terminals are arranged at a pitch of 0.1 to 0.5 mm.
また、4は絶縁材からなる配線基板であり、この基板4
面には多数の配線5,5,…が形成されている。この各
配線5,5,…は、基板4面の半導体ペレット取付け位
置から導出されており、各配線5,5,…の半導体ペレ
ット取付け位置側の端部はそれぞれ半導体ペレット1の
各端子部2,2,…とそれぞれ対応する半導体ペレット
接続用端子部5a,5a,…とされている。なお、この
半導体ペレット接続用端子部5a,5a,…の巾は、半
導体ペレット1の端子部2,2,…の巾よりわずかに狭
い巾とされている。Reference numeral 4 is a wiring board made of an insulating material.
A large number of wirings 5, 5, ... Are formed on the surface. The wirings 5, 5, ... Are derived from the semiconductor pellet mounting positions on the surface of the substrate 4, and the ends of the wirings 5, 5 ,. , 2, ... Corresponding semiconductor pellet connecting terminals 5a, 5a ,. The width of the semiconductor pellet connecting terminals 5a, 5a, ... Is made slightly narrower than the width of the terminals 2, 2 ,.
この実施例は、半導体ペレット1と基板4との一方例え
ば基板4の半導体ペレット取付け位置に、この基板4面
に形成した各端子部5a,5a,…の上から絶縁性接着
剤6を塗布し、その上に半導体ペレット1を重ねてこの
半導体ペレット1と基板4とを相対的に押圧することに
より、半導体ペレット1側の各端子部2,2,…と基板
4側の各端子部5a,5a,…とを導通接続させるとと
もに、前記絶縁性接着剤6を硬化させて半導体ペレット
1と基板4とを絶縁性接着剤6によって接着接合するも
のであり、この半導体ペレット1と基板4との接合は具
体的には次のようにして行なわれる。In this embodiment, an insulating adhesive 6 is applied to one of the semiconductor pellet 1 and the substrate 4, for example, at the semiconductor pellet mounting position on the substrate 4 from above the terminal portions 5a, 5a, ... Formed on the surface of the substrate 4. , And the semiconductor pellets 1 are superposed on each other, and the semiconductor pellets 1 and the substrate 4 are relatively pressed, so that the terminal portions 2, 2, ... On the semiconductor pellet 1 side and the terminal portions 5a on the substrate 4 side, Are electrically connected to each other, and the insulating adhesive 6 is cured to bond the semiconductor pellet 1 and the substrate 4 to each other by the insulating adhesive 6. The semiconductor pellet 1 and the substrate 4 are connected to each other. The joining is specifically performed as follows.
まず、第2図(a)に示すような半導体ペレット接続用
端子部5a,5a,…を配列形成した基板1面に、その
各端子部5a,5a,…を含む半導体ペレット接合面全
体にわたって各端子部5a,5a,…の上から絶縁性接
着剤6を第2図(b)に示すようにほぼ均一厚さに塗布
する。First, on the surface of the substrate 1 on which the semiconductor pellet connecting terminal portions 5a, 5a, ... As shown in FIG. 2 (a) are formed, the entire semiconductor pellet bonding surface including the respective terminal portions 5a, 5a ,. The insulating adhesive 6 is applied from above the terminal portions 5a, 5a, ... To a substantially uniform thickness as shown in FIG. 2 (b).
この後は、第2図(c)に示すように、前記絶縁性接着
剤6の上から半導体ペレット1を、その各端子部2,
2,…を基板4側の各端子部5a,5a,…とそれぞれ
対応させて重ね、この状態で半導体ペレット1をその上
から加圧治具7により加圧して半導体ペレット1と基板
4とを相対的に押圧するとともに、前記絶縁性接着剤6
を硬化させて半導体ペレット1と基板4とを絶縁性接着
剤6によって接着接合する。After that, as shown in FIG. 2 (c), the semiconductor pellet 1 is placed on the insulating adhesive 6 and each terminal portion 2,
2, ... Overlap with corresponding terminal portions 5a, 5a, ... on the substrate 4 side, respectively, and in this state, the semiconductor pellet 1 is pressed from above by a pressing jig 7 to separate the semiconductor pellet 1 and the substrate 4 from each other. While pressing relatively, the insulating adhesive 6
Is cured and the semiconductor pellet 1 and the substrate 4 are adhesively bonded to each other with an insulating adhesive 6.
しかして、上記のように絶縁性接着剤6の上から半導体
ペレット1を重ねて半導体ペレット1と基板4とを相対
的に押圧すると、この押圧力により、半導体ペレット1
と基板4との両方の端子部2,5a間の接着剤6がこの
端子部間の外側に押出され、両方の端子部2,5aが第
2図(c)に示すように互いに直接接触してこの両端子
部2,5aが導通接続される。なお、半導体ペレット1
と基板4とを相対的に押圧する加圧力は、700g〜1
kg程度で十分であり、この程度の加圧力で半導体ペレッ
ト1と基板4とを相対的に押圧すると両端子部2,5a
間の接着剤6がほぼ完全に押出されて両端子部2,5a
が十分な導通性をもって接続される。また、この状態で
前記絶縁性接着剤6を硬化させると、この接着剤6によ
り半導体ペレット1と基板4とが互いに接着される。Then, as described above, when the semiconductor pellets 1 are stacked on the insulating adhesive 6 and the semiconductor pellets 1 and the substrate 4 are relatively pressed, the pressing force causes the semiconductor pellets 1 to move.
The adhesive 6 between the terminal portions 2 and 5a of both the substrate 4 and the substrate 4 is extruded to the outside between the terminal portions, and both the terminal portions 2 and 5a come into direct contact with each other as shown in FIG. 2 (c). The lever terminals 2 and 5a are electrically connected. The semiconductor pellet 1
The pressing force for relatively pressing the substrate 4 with the substrate 4 is 700 g to 1
About kg is sufficient, and when the semiconductor pellet 1 and the substrate 4 are relatively pressed with such a pressing force, both terminal portions 2, 5a
The adhesive 6 between the two terminals 2 and 5a
Are connected with sufficient conductivity. Further, when the insulating adhesive 6 is cured in this state, the adhesive 6 bonds the semiconductor pellet 1 and the substrate 4 to each other.
なお、前記絶縁性接着剤6は、常温硬化型のものでも、
一般にホットメルト型と呼ばれている熱可塑性接着剤で
も、熱硬化型のものでも、あるいはUVインク等でもよ
く、例えば絶縁性接着剤6として常温硬化型接着剤を使
用する場合は、基板4面に接着剤を塗布した後、直ちに
半導体ペレット1を重ねて加圧し、この状態で接着剤を
硬化させればよい。また、絶縁性接着剤6としてUVイ
ンクを使用する場合は、基板4面に塗布した接着剤の上
に半導体ペレット1を重ねて指圧し、この状態で紫外線
を照射して接着剤を硬化させればよく、さらに絶縁性接
着剤6としてホットメルト型と呼ばれている熱可塑性接
着剤を使用する場合は、接着剤を基板4面に塗布してこ
れを乾燥させておき、その上に半導体ペレット1を重ね
て接着剤の溶融温度に加熱(加圧治具7を加熱治具を兼
ねるものとして半導体ペレット1側から加熱するか、ま
たは他の手段で基板4の裏面側から加熱)しながら加圧
し、この後加圧状態で冷却して接着剤を硬化させればよ
い。また、絶縁性接着剤6として熱硬化型接着剤を使用
する場合は、接着剤の塗布後直ちに半導体ペレット1を
重ねて加圧し、この状態で接着剤の硬化温度に加熱する
か、基板4面に塗布した接着剤を乾燥(硬化温度以下の
温度で乾燥)させておき、その上に半導体ペレット1を
重ねて加圧加熱して接着剤を硬化させればよい。なお、
絶縁性接着剤6として熱硬化型接着剤を使用する場合
は、半導体ペレット1に熱破壊を生じさせない程度の比
較的低温度で硬化するものを選ぶことが必要である。The insulating adhesive 6 may be a room temperature curable type,
A thermoplastic adhesive which is generally called a hot melt type, a thermosetting type adhesive, a UV ink or the like may be used. For example, when a room temperature curing type adhesive is used as the insulating adhesive 6, the substrate 4 surface Immediately after the adhesive is applied to the semiconductor pellets 1, the semiconductor pellets 1 are stacked and pressed, and the adhesive is cured in this state. When the UV ink is used as the insulating adhesive 6, the semiconductor pellet 1 is overlaid on the adhesive applied to the surface of the substrate 4 and finger pressure is applied, and in this state, the ultraviolet irradiation is applied to cure the adhesive. In addition, when a thermoplastic adhesive called hot melt type is used as the insulating adhesive 6, the adhesive is applied to the surface of the substrate 4 and dried, and then the semiconductor pellets are applied. 1 are piled up and heated to the melting temperature of the adhesive (the pressing jig 7 is heated from the semiconductor pellet 1 side as a heating jig also serving as a heating jig, or is heated from the back surface side of the substrate 4 by other means). The adhesive may be pressed and then cooled under pressure to cure the adhesive. When a thermosetting adhesive is used as the insulating adhesive 6, the semiconductor pellets 1 are stacked and pressed immediately after the adhesive is applied, and in this state, they are heated to the curing temperature of the adhesive or the surface of the substrate 4 is covered. It is sufficient to dry (dry at a temperature equal to or lower than the curing temperature) the adhesive applied to the above, and stack the semiconductor pellets 1 on it to heat under pressure to cure the adhesive. In addition,
When a thermosetting adhesive is used as the insulating adhesive 6, it is necessary to select one that cures at a relatively low temperature at which the semiconductor pellet 1 is not destroyed by heat.
このようにして半導体ペレット1を基板4に接着接合し
た後は、必要に応じて第3図に示すように半導体ペレッ
ト1をエポキシ樹脂等の合成樹脂8でモールドする。After the semiconductor pellet 1 is adhesively bonded to the substrate 4 in this way, the semiconductor pellet 1 is molded with a synthetic resin 8 such as an epoxy resin as required, as shown in FIG.
第4図は上記のようにして接合された半導体ペレット1
と基板4の接合部の一部分を拡大して示したもので、半
導体ペレット1は、その端子部2から金バンプをなくし
たものとされている。すけなわち、第4図において、11
は半導体ペレット1の基材(ここではN型基材)、12は
P型拡散層、13はN型拡散層であり、これら拡散層12,1
3が形成されたペレット主面には酸化シリコン(SiO
2)からなる絶縁膜14が形成され、その上にはアルミニ
ウムからなる配線15が形成されている。この配線15は、
前記絶縁膜14に設けた開口部において前記拡散層12,13
のうちの所定の拡散層と導通されている。また、この配
線15は、ペレット外周縁部に導出されており、この配線
15の端部は、外部回路との接続用パッド15aとされ、こ
のパッド15aは、そのまま半導体ペレット1の端子部2
とされている。また、3は前記配線15の上から半導体ペ
レット1の主面に形成された酸化シリコンからなる絶縁
保護膜であり、この保護膜3は、前記パッド15aからな
る端子部2を除いて形成されている。FIG. 4 shows a semiconductor pellet 1 joined as described above.
2 is an enlarged view of a part of the bonding portion of the substrate 4 and the semiconductor pellet 1 in which the gold bump is removed from the terminal portion 2. In Figure 4, in Figure 4, 11
Is a base material of the semiconductor pellet 1 (here, N-type base material), 12 is a P-type diffusion layer, and 13 is an N-type diffusion layer.
Silicon oxide (SiO 2) is formed on the main surface of the pellet on which 3 is formed.
An insulating film 14 made of 2 ) is formed, and a wiring 15 made of aluminum is formed thereon. This wiring 15
In the openings provided in the insulating film 14, the diffusion layers 12, 13
Is electrically connected to a predetermined diffusion layer. The wiring 15 is led to the outer peripheral edge of the pellet.
The end portion of 15 is used as a pad 15a for connecting to an external circuit, and this pad 15a is used as it is for the terminal portion 2 of the semiconductor pellet 1.
It is said that. Further, 3 is an insulating protective film made of silicon oxide formed on the main surface of the semiconductor pellet 1 from above the wiring 15, and the protective film 3 is formed except for the terminal portion 2 made of the pad 15a. There is.
すなわち、半導体ペレット1の端子部2、つまり前記接
続用パッド15aは、保護膜3の上面から第4図に示すよ
うに陥入している。That is, the terminal portion 2 of the semiconductor pellet 1, that is, the connection pad 15a is recessed from the upper surface of the protective film 3 as shown in FIG.
なお、この実施例において、半導体ペレット1の端子部
2から金バンプをなくしたのは、半導体ペレット1が基
板4に直接接合されるものであるために、ワイヤボンデ
ィングによる場合のようにパッド15a上にボンディング
ワイヤの溶着のための金バンプを設けておく必要がない
からであり、このように半導体ペレット1を端子部2か
ら金バンプをなくしたものとすれば、それだけ半導体ペ
レット1が安価となる。In this embodiment, the reason why the gold bumps are eliminated from the terminal portion 2 of the semiconductor pellet 1 is that the semiconductor pellet 1 is directly bonded to the substrate 4. This is because it is not necessary to provide a gold bump for welding the bonding wire to the semiconductor pellet 1. If the semiconductor pellet 1 has no gold bump from the terminal portion 2 in this way, the semiconductor pellet 1 becomes less expensive. .
しかして、この半導体ペレットと基板の接合方法では、
上記のように、基板4面に絶縁性接着剤6を塗布し、そ
の上に半導体ペレットペレット1を重ねて半導体ペレッ
ト1と基板4とを相対的に押圧することにより、この押
圧力で半導体ペレット1と基板4との端子部2,5a間
の接着剤6をこの端子部2,5a間の外側に押出して両
方の端子部2,5aを導通接続させるようにしているか
ら、前記接着剤6は基板4面の各端子部5a,5a,…
を含む半導体ペレット接合面にべた塗りすればよいし、
また半導体ペレット1と基板4との接合も、半導体ペレ
ット1と基板4とを相対的に押圧してその状態で接着剤
6を硬化させるだけで行なえるから、異方導電性接着剤
によって半導体ペレットと基板とを接着接合する方法と
同程度の短い時間で能率よく半導体ペレットと基板とを
接合することができる。また、この接合方法では、半導
体ペレット1と基板4との両方の端子部2,5aをその
間の絶縁性接着剤6を外側に押出すことによって直接導
通接続させるようにしているために、異方導電性接着剤
を使用する方法のように異方導電性接着剤中の導電性粒
子の分布のばらつきによる導通を不良部分を称すること
もなく、さらに、前記絶縁性接着剤6は異方導電性接着
剤に比べてかなり安価であるから、異方導電性接着剤を
用いる方法よりもさらにコストを低減することができ
る。また、半導体ペレット1の端子部2を前記保護膜3
の上面より陥入するものとし、且つ基板4の端子部5a
を前記半導体ペレット1の端子部2よりも巾狭となすこ
とにより、半導体ペレット1と基板4との両方の端子部
2,5aを直接接合するので、半導体ペレット1の端子
部2にバンプを形成する方法に比べても安価となる。Then, in the method of joining the semiconductor pellet and the substrate,
As described above, the insulating adhesive 6 is applied to the surface of the substrate 4, the semiconductor pellet pellets 1 are overlaid thereon, and the semiconductor pellet 1 and the substrate 4 are relatively pressed, so that the semiconductor pellets are pressed by this pressing force. The adhesive 6 between the terminal portions 2 and 5a of the substrate 1 and the substrate 4 is extruded to the outside between the terminal portions 2 and 5a to electrically connect both terminal portions 2 and 5a. Are terminal portions 5a, 5a, ...
It may be solid-painted on the semiconductor pellet bonding surface containing
Further, since the semiconductor pellet 1 and the substrate 4 can be joined only by relatively pressing the semiconductor pellet 1 and the substrate 4 and curing the adhesive 6 in that state, the semiconductor pellet is bonded by the anisotropic conductive adhesive. It is possible to efficiently bond the semiconductor pellet and the substrate in a short time as long as the method of adhesively bonding the substrate and the substrate. Further, in this joining method, since the terminal portions 2 and 5a of both the semiconductor pellet 1 and the substrate 4 are directly connected to each other by extruding the insulating adhesive 6 between them, it is anisotropic. Unlike the method of using a conductive adhesive, conduction due to variations in the distribution of conductive particles in the anisotropic conductive adhesive is not referred to as a defective portion, and the insulating adhesive 6 is anisotropically conductive. Since it is considerably cheaper than the adhesive, the cost can be further reduced as compared with the method using the anisotropic conductive adhesive. In addition, the terminal portion 2 of the semiconductor pellet 1 is connected to the protective film 3
Of the terminal portion 5a of the substrate 4
Since the terminal portion 2 of the semiconductor pellet 1 is made narrower than the terminal portion 2 of the semiconductor pellet 1, the terminal portions 2 and 5a of both the semiconductor pellet 1 and the substrate 4 are directly bonded, so that a bump is formed on the terminal portion 2 of the semiconductor pellet 1. It is cheaper than the method.
なお、上記実施例では、基板4の半導体ペレット接合面
全体に絶縁性接着剤6を塗布しているが、この絶縁性接
着剤6は、端子部5a,5a,…の配列部分にのみ塗布
してもよい。In the above embodiment, the insulating adhesive 6 is applied to the entire semiconductor pellet bonding surface of the substrate 4, but the insulating adhesive 6 is applied only to the array portion of the terminal portions 5a, 5a, .... May be.
さらに絶縁性接着剤は、基板4または半導体ペレット1
に塗布する代わりに、あらかじめシート状に成形してお
いて基板4と半導体ペレット1の間に挟み込むようにし
てもよい。Further, the insulating adhesive is used for the substrate 4 or the semiconductor pellet 1.
Instead of being applied to the substrate 1, it may be formed into a sheet shape in advance and sandwiched between the substrate 4 and the semiconductor pellet 1.
この発明は、半導体ペレットと基板とを、その両方の端
子部が対向する部分を含む接合面に介在させた絶縁性接
着剤で接着接合するものであるから、異方導電性接着剤
によって半導体ペレットと基板とを接着接合する方法と
同程度の短い時間で能率よく半導体ペレットと基板とを
接合することができるし、また、半導体ペレットと基板
との両方の端子部をその間の絶縁性接着剤を外側に押出
すことによって直接導通接続させるようにしているため
に、異方導電性接着剤を使用する方法のように異方導電
性接着剤中の導電性粒子の分布のばらつきによる導通不
良部分を生ずることもなく、さらに、前記絶縁性接着剤
は異方導電性接着剤に比べてかなり安易かであるから、
異方導電性接着剤を用いる方法よりもさらにコストを低
減することができる。また、半導体ペレットの端子部を
保護膜の上面より陥入するものとし、且つ基板の端子部
を前記半導体ペレットの端子部よりも巾狭となすことに
より、半導体ペレットと基板との両方の端子部を直接接
合するので、半導体ペレットの端子部にバンプを形成す
る方法に比べても安価となる。According to the present invention, a semiconductor pellet and a substrate are bonded and joined together with an insulating adhesive which is interposed on a joint surface including portions where both terminal portions face each other. Therefore, the semiconductor pellet is bonded with the anisotropic conductive adhesive. It is possible to efficiently bond the semiconductor pellet and the substrate in a short time comparable to the method of adhesively bonding the substrate and the substrate, and also to use the insulating adhesive between the terminals of both the semiconductor pellet and the substrate. Since the conductive connection is made directly by extruding to the outside, as in the method of using the anisotropic conductive adhesive, the defective conductive part due to the uneven distribution of the conductive particles in the anisotropic conductive adhesive is removed. Moreover, since the insulating adhesive is much easier than the anisotropic conductive adhesive,
The cost can be further reduced as compared with the method using the anisotropic conductive adhesive. Further, the terminal portion of the semiconductor pellet is recessed from the upper surface of the protective film, and the terminal portion of the substrate is narrower than the terminal portion of the semiconductor pellet, so that both the terminal portion of the semiconductor pellet and the terminal portion of the substrate are formed. Is directly bonded, the cost is lower than the method of forming bumps on the terminals of the semiconductor pellet.
第1図〜第4図はこの発明の一実施例を示したもので、
第1図は接合方法の概略図、第2図は接合工程を示す端
子部配列線に沿う断面図、第3図は半導体ペレットをモ
ールドした状態の断面図、第4図は第3図のA−A線に
沿う拡大断面図である。 1……半導体ペレット、2……端子部、15a……パッ
ド、3……保護膜、4……基板、5……配線、5a……
端子部、6……絶縁性接着剤、7……加圧治具。1 to 4 show an embodiment of the present invention.
FIG. 1 is a schematic view of a joining method, FIG. 2 is a cross-sectional view along a terminal part arrangement line showing a joining process, FIG. 3 is a cross-sectional view of a state in which a semiconductor pellet is molded, and FIG. 4 is A of FIG. It is an expanded sectional view which follows the -A line. 1 ... Semiconductor pellet, 2 ... Terminal part, 15a ... Pad, 3 ... Protective film, 4 ... Substrate, 5 ... Wiring, 5a ...
Terminal, 6 ... Insulating adhesive, 7 ... Pressure jig.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 正木 久士 東京都西多摩郡羽村町栄町3丁目2番1号 カシオ計算機株式会社羽村技術センター 内 (72)発明者 鑓田 好男 東京都西多摩郡羽村町栄町3丁目2番1号 カシオ計算機株式会社羽村技術センター 内 (72)発明者 厚見 好則 東京都西多摩郡羽村町栄町3丁目2番1号 カシオ計算機株式会社羽村技術センター 内 (72)発明者 玉木 敏晴 東京都西多摩郡羽村町栄町3丁目2番1号 カシオ計算機株式会社羽村技術センター 内 (56)参考文献 特開 昭60−262430(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hisashi Masaki Hisashi Masaki 3-2-1, Sakaemachi, Hamura-cho, Nishitama-gun, Tokyo Casio Computer Co., Ltd. Hamura Technical Center (72) Inventor Yoshio Akita Sakae-cho, Hamura-cho, Nishitama-gun, Tokyo 3-2-1, Casio Computer Co., Ltd., Hamura Technology Center (72) Inventor Yoshinori Atsumi 3-2-1, Sakaemachi, Hamura-cho, Nishitama-gun, Tokyo Casio Computer Co., Ltd., Hamura Technology Center (72) Inventor Tamaki Toshiharu 3-2-1 Sakaemachi, Hamura-cho, Nishitama-gun, Tokyo Casio Computer Co., Ltd., Hamura Technical Center (56) Reference JP-A-60-262430 (JP, A)
Claims (1)
導体ペレットと、この半導体ペレットの端子部に対応す
る端子部が形成された基板とを、その両方の端子部が対
向する部分を含む接合面に絶縁性接着剤を介在させて相
対的に押圧し、この押圧力により前記両方の端子部間の
前記接着剤をこの端子部間の外方に押出して前記両方の
端子部を導通接続させ、前記接着剤を硬化して前記半導
体ペレットと前記基板とを接着する接合方法であって、
前記半導体ペレットの端子部を前記保護膜の上面より陥
入するものとし、且つ前記基板の端子部を前記半導体ペ
レットの端子部よりも巾狭となしたことを特徴とする半
導体ペレットと基板の接合方法。1. A semiconductor pellet in which a protective film is formed on the main surface excluding the terminal portion, and a substrate in which the terminal portion corresponding to the terminal portion of the semiconductor pellet is formed, in which both terminal portions face each other. Insulating adhesive is interveningly pressed against the joint surface including, and by this pressing force, the adhesive between the two terminal portions is extruded to the outside between the terminal portions so that the both terminal portions are A method of joining for connecting the semiconductor pellet and the substrate by conducting the conductive connection and curing the adhesive,
Bonding of the semiconductor pellet and the substrate, wherein the terminal portion of the semiconductor pellet is recessed from the upper surface of the protective film, and the terminal portion of the substrate is narrower than the terminal portion of the semiconductor pellet. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033949A JPH0638436B2 (en) | 1985-02-22 | 1985-02-22 | Method of joining semiconductor pellet and substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033949A JPH0638436B2 (en) | 1985-02-22 | 1985-02-22 | Method of joining semiconductor pellet and substrate |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4020898A Division JPH06103706B2 (en) | 1992-02-06 | 1992-02-06 | Method of joining semiconductor device and substrate |
| JP4020897A Division JPH06103705B2 (en) | 1992-02-06 | 1992-02-06 | Method of joining semiconductor device and substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194732A JPS61194732A (en) | 1986-08-29 |
| JPH0638436B2 true JPH0638436B2 (en) | 1994-05-18 |
Family
ID=12400752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60033949A Expired - Lifetime JPH0638436B2 (en) | 1985-02-22 | 1985-02-22 | Method of joining semiconductor pellet and substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0638436B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777227B2 (en) * | 1986-12-16 | 1995-08-16 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| JPH084101B2 (en) * | 1987-06-25 | 1996-01-17 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
| JP2623762B2 (en) * | 1988-04-28 | 1997-06-25 | セイコーエプソン株式会社 | Semiconductor element mounting structure |
| JPH05109818A (en) * | 1991-10-16 | 1993-04-30 | Hitachi Chem Co Ltd | Semiconductor chip connection structure |
| US7967943B2 (en) | 1997-03-31 | 2011-06-28 | Hitachi Chemical Company, Ltd. | Circuit-connecting material and circuit terminal connected structure and connecting method |
| DE69836078T2 (en) | 1997-03-31 | 2007-05-10 | Hitachi Chemical Co., Ltd. | MATERIAL FOR CONNECTING PCB AND METHOD FOR CONNECTING SWITCHING CONNECTIONS |
| DE10046296C2 (en) * | 2000-07-17 | 2002-10-10 | Infineon Technologies Ag | Electronic chip component with an integrated circuit and method for its production |
| CN108922959B (en) | 2013-03-28 | 2022-07-29 | 日亚化学工业株式会社 | Light emitting device and device using the same |
| JP5723497B2 (en) | 2013-03-28 | 2015-05-27 | 東芝ホクト電子株式会社 | Method for manufacturing light emitting device |
| WO2015083365A1 (en) | 2013-12-02 | 2015-06-11 | 東芝ホクト電子株式会社 | Light-emission device, and production method therefor |
| CN105518886A (en) | 2013-12-02 | 2016-04-20 | 东芝北斗电子株式会社 | Light-emitting unit, light-emitting device, and method for manufacturing light-emitting unit |
| WO2015083364A1 (en) | 2013-12-02 | 2015-06-11 | 東芝ホクト電子株式会社 | Light-emission device |
| JPWO2015146115A1 (en) | 2014-03-25 | 2017-04-13 | 東芝ホクト電子株式会社 | Light emitting device |
| WO2016047133A1 (en) | 2014-09-26 | 2016-03-31 | 東芝ホクト電子株式会社 | Light-emission module |
| CN106030839B (en) | 2014-09-26 | 2018-09-28 | 东芝北斗电子株式会社 | Light emitting module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5211862A (en) * | 1975-07-18 | 1977-01-29 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JPS5873126A (en) * | 1981-10-27 | 1983-05-02 | Seiko Keiyo Kogyo Kk | Mounting method of semiconductor device |
| JPS60262430A (en) * | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1985
- 1985-02-22 JP JP60033949A patent/JPH0638436B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61194732A (en) | 1986-08-29 |
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