JPH0640563B2 - Laser trimming method for membrane resistor - Google Patents
Laser trimming method for membrane resistorInfo
- Publication number
- JPH0640563B2 JPH0640563B2 JP60049978A JP4997885A JPH0640563B2 JP H0640563 B2 JPH0640563 B2 JP H0640563B2 JP 60049978 A JP60049978 A JP 60049978A JP 4997885 A JP4997885 A JP 4997885A JP H0640563 B2 JPH0640563 B2 JP H0640563B2
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- Prior art keywords
- resin
- insulating film
- film
- resistor
- laser trimming
- Prior art date
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Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は膜抵抗体をレーザビームによりトリミングする
方法に係り、特に膜抵抗体の下地絶縁膜に損傷を与えな
いようにしたレーザトリミング方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for trimming a film resistor with a laser beam, and more particularly to a laser trimming method for preventing damage to a base insulating film of the film resistor.
最近、電子機器は小型・薄型化の傾向がめざましく、そ
れに伴い各種電子部品についても小型化の要求が厳しく
なっている。この要求に応えるため、例えば抵抗体に関
してはアキシャルリードタイプの素子に代わりチップ部
品が広く普及しつつあり、さらに酸化ルテニウム系やカ
ーボン系の厚膜による印刷抵抗も広く使われるようにな
っており、薄型実装に大きく貢献している。Recently, electronic devices have been remarkably reduced in size and thickness, and accordingly, demands for miniaturization of various electronic components have been increased. In order to meet this demand, for example, regarding resistors, chip components are becoming widespread in place of axial lead type elements, and ruthenium oxide-based or carbon-based thick film printing resistors are also widely used. Contributes significantly to thin mounting.
ところで、これら厚膜印刷抵抗のような膜抵抗体は目標
抵抗値に精度良く形成することが困難であるため通常、
印刷,焼成の後に抵抗体の一部を除去し所定抵抗値に調
整するトリミング工程が必要である。トリミング方法に
は抵抗体のアルミナ粉を吹付け抵抗体を削り取るサンド
ブラスト法と、レーザビームの照射により抵抗体の一部
を除去するレーザトリミング方法がある。後者のレーザ
トリミング方法は、コンピュータ制御が容易であり処理
能力が大きいことから最近特に普及し、アルミナ基材上
に形成した酸化ルテニウム抵抗体に多く適用されてい
る。By the way, since it is difficult to accurately form a film resistor such as these thick film printed resistors to a target resistance value,
After printing and firing, a trimming process is required to remove a part of the resistor and adjust it to a predetermined resistance value. As the trimming method, there are a sandblast method in which alumina powder of a resistor is sprayed to scrape the resistor, and a laser trimming method in which a part of the resistor is removed by irradiation with a laser beam. The latter laser trimming method has been particularly popular recently because it is easy to control by computer and has a large processing capability, and is often applied to a ruthenium oxide resistor formed on an alumina substrate.
しかしながら、レーザトリミング方法はかなりパワーの
大きいレーザビームを抵抗体に微小スポットとして照射
するため、基材がアルミナのような無機物の場合はほと
んど問題はないが、基材の全体または表面部分に樹脂系
材料を用いた場合には、抵抗体の下部の樹脂にまでレー
ザビームが到達して損傷を与えてしまうという問題があ
る。特に、樹脂系絶縁膜を表面に形成した金属基板を用
いる,高放熱性が要求される金属コア印刷配線板上にお
いては、抵抗体下部の樹脂に損傷を与えることは絶縁膜
の耐電圧を低下させ致命的な欠陥となる。However, since the laser trimming method irradiates a resistor with a laser beam having a considerably large power as a minute spot, there is almost no problem when the base material is an inorganic material such as alumina. When a material is used, there is a problem that the laser beam reaches the resin below the resistor to damage it. In particular, on a metal core printed wiring board that requires high heat dissipation using a metal substrate having a resin-based insulating film formed on the surface, damage to the resin under the resistor lowers the withstand voltage of the insulating film. It becomes a fatal defect.
本発明はこのような問題点に鑑みてなされたもので、そ
の目的は樹脂系絶縁膜上に形成された膜抵抗体にレーザ
ビームを照射してトリミングを行なうに際して、膜抵抗
体下部の絶縁膜に損傷を与えることのないレーザトリミ
ング方法を提供することにある。The present invention has been made in view of such problems, and an object thereof is to irradiate a film resistor formed on a resin-based insulating film with a laser beam for trimming, and to perform insulation film under the film resistor. It is to provide a laser trimming method that does not damage the laser.
本発明はこの目的を達成するため、膜抵抗体の下層部に
予め白色顔料を含む樹脂系絶縁膜を形成しておき、その
状態で膜抵抗体にレーザビームを照射してトリミングを
行なうことを特徴とする。To achieve this object, the present invention forms a resin-based insulating film containing a white pigment in advance in the lower layer portion of the film resistor, and in that state, the film resistor is irradiated with a laser beam to perform trimming. Characterize.
本発明によれば、膜抵抗体の下層部の樹脂系絶縁膜が白
色顔料を含んでおり、光反射性を有するため、トリミン
グ時に膜抵抗体に照射されたレーザビームは該絶縁膜で
反射される。従って、レーザトリミンによって膜抵抗体
の下部の樹脂系絶縁膜に損傷を与えるおそれがなくな
り、電気的特性の劣化、特に絶縁膜の体電圧低下を防ぐ
ことができる。According to the present invention, since the resin-based insulating film under the film resistor contains the white pigment and has light reflectivity, the laser beam applied to the film resistor during trimming is reflected by the insulating film. It Therefore, there is no risk of the laser trimine damaging the resin-based insulating film below the film resistor, and it is possible to prevent the deterioration of the electrical characteristics, especially the decrease in the body voltage of the insulating film.
本発明の一実施例を第1図および第2図を参照して説明
する。An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
まず、第1図(a)に示すように基材1上に白色顔料を
含む樹脂系絶縁膜2を下地層として塗布・形成する。基
材1は金属基板であってもよいし、絶縁基板あるいは印
刷配線板等であってもよい。First, as shown in FIG. 1A, a resin-based insulating film 2 containing a white pigment is applied / formed as a base layer on a base material 1. The base material 1 may be a metal substrate, an insulating substrate, a printed wiring board, or the like.
絶縁膜2中のベースとなる樹脂成分としては、例えばポ
リブタジエン樹脂,エポキシ樹脂,ポリイミド樹脂,フ
ェノキシ樹脂,ビスマリイミド樹脂アクリル樹脂,フェ
ノール樹脂から選択した少なくとも一種を用いることが
できる。なかでも1,2ポリブタジエン樹脂は黄変度が
少なく、レーザビームの照射に対して傷付きにくく、さ
らに回路黄板材料として耐熱性,電気的特性等に優れて
いるため、特に好適である。一方、白色顔料としては酸
化チタン,酸化亜鉛,塩基性炭酸鉛,硫酸バリウム,硫
化亜鉛,塩基性硫酸鉛,酸化アンチモン,シリカ,アル
ミナから選択した少なくとも一種を用いることができ、
これらを上記樹脂に混練調製したものを基材1上に例え
ば5μm〜200μm程度の厚さに塗布することによっ
て、樹脂系絶縁膜2が形成される。なお、白色顔料とし
て上に列挙したものの中で、特に酸化チタンはYAGレ
ーザ出力である1.06μm波長の光に対する反射率が
高く、また耐熱性,電気的特性にも優れているため非常
に好適である。As the resin component serving as a base in the insulating film 2, for example, at least one selected from polybutadiene resin, epoxy resin, polyimide resin, phenoxy resin, bismaliimide resin acrylic resin, and phenol resin can be used. Of these, 1,2 polybutadiene resin is particularly suitable because it has a low degree of yellowing, is less likely to be damaged by laser beam irradiation, and has excellent heat resistance and electrical characteristics as a circuit yellow plate material. On the other hand, as the white pigment, at least one selected from titanium oxide, zinc oxide, basic lead carbonate, barium sulfate, zinc sulfide, basic lead sulfate, antimony oxide, silica, and alumina can be used.
The resin-based insulating film 2 is formed by coating the above resin by kneading and preparing it on the base material 1 to a thickness of, for example, about 5 μm to 200 μm. Among the white pigments listed above, titanium oxide is particularly suitable because it has a high reflectance with respect to the YAG laser output of 1.06 μm wavelength light and is excellent in heat resistance and electrical characteristics. Is.
ここで、樹脂系絶縁膜2中の白色顔料の含有量は、1w
t.%〜60wt.%が望ましい。これは白色顔料の含有
量が1wt.%未満であると目的達成上ほとんど効果が期
待できず、また60wt.%を越えると絶縁膜2の誘電率
が増大しすぎる結果、回路的にクロストークノイズ等が
多くなったり、信号遅延が生じる等の不具合が発生する
からである。また、この樹脂系絶縁膜2に、塗布性,作
業性を上げる目的で溶剤,チクソ剤等が添加することは
一向に差支えない。樹脂絶縁膜2の形成に際しての樹脂
の塗布方法は、スクリーン印刷法,スピンナーコート
法,ディップ法等のいずれの方法を用いてもよい。さら
に、樹脂系絶縁膜2は基材1上全面に塗布・形成しても
よいし、膜抵抗体が形成される領域あるいはその近傍に
のみ選択的に形成してもよい。Here, the content of the white pigment in the resin-based insulating film 2 is 1w.
t. % -60 wt. % Is desirable. This has a white pigment content of 1 wt. If it is less than%, almost no effect can be expected in achieving the purpose, and 60 wt. If it exceeds%, the dielectric constant of the insulating film 2 is excessively increased, and as a result, problems such as a large amount of crosstalk noise in the circuit and a signal delay occur. Further, it is perfectly acceptable to add a solvent, a thixotropic agent or the like to the resin-based insulating film 2 for the purpose of improving the coating property and workability. As a resin coating method for forming the resin insulating film 2, any method such as a screen printing method, a spinner coating method, or a dipping method may be used. Furthermore, the resin-based insulating film 2 may be applied / formed on the entire surface of the substrate 1, or may be selectively formed only in the region where the film resistor is formed or in the vicinity thereof.
次に、第1図(b)に示すように膜抵抗体3および電極
4を形成して、抵抗素子を作製する。膜抵抗体3は厚膜
印刷抵抗体または薄膜抵抗体であり、厚膜印刷抵抗体と
しては例えばカーボン印刷抵抗を用いることができ、ま
た薄膜抵抗体としては例えばRuO2,TaN,Ta2
O3,NiCr等のスパッタ膜抵抗、あるいはNiメッ
キ抵抗等を使用することができる。Next, as shown in FIG. 1B, the film resistor 3 and the electrode 4 are formed to produce a resistance element. The film resistor 3 is a thick film printed resistor or a thin film resistor. As the thick film printed resistor, for example, a carbon printed resistor can be used, and as the thin film resistor, for example, RuO 2 , TaN, Ta 2 is used.
Sputtered film resistance such as O 3 or NiCr, or Ni plating resistance can be used.
次に、第1図(c)に示すようにレーザビーム5を膜抵
抗体3上に照射してレーザトリミングを行なう。レーザ
トリマーには例えばYAGレーザ(波長1.06μm)
を用いることができ、従来よりアルミナセラミック基板
上に直接形成されたRuO2抵抗体について行なわれて
いるレーザトリミングと同様にして行なえばよい。トリ
ミングの形態はシングルカット,ダブルカット,Lカッ
ト,サーペンティンカット等のいずれであってもよい。Next, as shown in FIG. 1C, a laser beam 5 is irradiated onto the film resistor 3 to perform laser trimming. For the laser trimmer, for example, YAG laser (wavelength 1.06 μm)
Can be used, and it may be performed in the same manner as the laser trimming that is conventionally performed on the RuO 2 resistor directly formed on the alumina ceramic substrate. The trimming form may be single cut, double cut, L cut, serpentine cut, or the like.
第2図はこうしてレーザトリミングがなされた後の膜抵
抗体3を示したものであり、図の例では記号6に示すよ
うにLカットのレーザトリミングが行なわれている。次
に、本発明のより具体的な実施例と比較例について述べ
る。FIG. 2 shows the film resistor 3 after the laser trimming is performed in this way, and in the example of the figure, L-cut laser trimming is performed as indicated by symbol 6. Next, more specific examples and comparative examples of the present invention will be described.
実施例 基材として硬質アルミニウム(JIS A−2017)板
(板厚2mm)を用意し、表面をブラスト研磨後、トリク
レン洗浄を行ない、下記の組成の絶縁性樹脂を基材表面
にスクリーン印刷した。Example A hard aluminum (JIS A-2017) plate (thickness: 2 mm) was prepared as a substrate, and after blasting the surface, trichlene washing was performed and an insulating resin having the following composition was screen-printed on the substrate surface.
次いで、180℃で15分間乾燥後、窒素雰囲気中37
0℃にて15分間加熱・硬化を行ない、厚さ140μm
の白色の樹脂系絶縁膜を得た。この絶縁膜上に膜抵抗体
としてカーボン印刷抵抗体をスクリーン印刷により形成
し、130℃で15分間乾燥した後、樹脂系銅ペースト
を用いて電極を印刷・形成し、さらに窒素雰囲気中37
0℃で15分間焼成を行ない、膜抵抗基板を得た。この
膜抵抗基板上の電極とアルミニウム基板間について5
[KV]×10[sec ]の耐電圧試験を実施し、この試
験にパスした基板についてレーザトリマー(東芝製LA
Y-711)を使って出力6W,ビーム径50μm,スキャ
ンスピード30mm/sec の条件でLカットトリミングを
行なった。このようにしてレーザトリミングがされた後
の膜抵抗体周囲を顕微鏡で観察したところ、樹脂系絶縁
膜表面には何ら損傷もなく、膜抵抗体のみカットされて
いることが確認された。 Then, after drying at 180 ° C. for 15 minutes, the product is dried in a nitrogen atmosphere at 37
Heated and cured at 0 ° C for 15 minutes, thickness 140 μm
To obtain a white resin-based insulating film. A carbon printed resistor was formed as a film resistor on the insulating film by screen printing, dried at 130 ° C. for 15 minutes, and an electrode was printed / formed using a resin-based copper paste.
Firing was performed at 0 ° C. for 15 minutes to obtain a film resistance substrate. Between the electrode on this membrane resistance substrate and the aluminum substrate 5
A withstand voltage test of [KV] × 10 [sec] was performed, and a laser trimmer (LA manufactured by Toshiba
Y-711) was used to perform L-cut trimming under conditions of an output of 6 W, a beam diameter of 50 μm, and a scan speed of 30 mm / sec. When the periphery of the film resistor after the laser trimming was observed with a microscope, it was confirmed that only the film resistor was cut without any damage on the surface of the resin-based insulating film.
また、同じ膜抵抗基板について5[KV]×10[sec
]の耐電圧試験を行なったところ、50サンプルにつ
いて試験した結果でも、樹脂系絶縁膜に何ら損傷は認め
られなかった。Also, for the same film resistance substrate, 5 [KV] × 10 [sec
], No damage was found in the resin-based insulating film even in the result of testing 50 samples.
比較例1 基材として厚さ0.5mmのステンレス板を用い、ポリブ
タジエン樹脂をスピンナーコートした後、窒素雰囲気中
370℃にて10分間加熱・硬化を行ない、膜厚100
μmの透明な樹脂系絶縁膜を得た。次いで、この絶縁膜
上にカーボン印刷抵抗と銅ペーストを順次スクリーン印
刷し、窒素雰囲気中370℃で5分間焼成を行なった。
そして実施例と同装置,同条件にてLカットトリミング
を行ない、表面を観察したところ、樹脂系絶縁膜表面に
は傷がないが、基材であるステンレス板の方に溝状の傷
ができ、しかも絶縁膜とステンレス板との境界が多数の
クラックが生じているのが確認された。また、5[K
V]×10[sec ]の耐電圧試験を実施したところ、5
0サンプル中41サンプルに不良が発生した。Comparative Example 1 A stainless steel plate having a thickness of 0.5 mm was used as a base material, and a polybutadiene resin was spinner-coated, followed by heating and curing at 370 ° C. for 10 minutes in a nitrogen atmosphere to obtain a film thickness of 100.
A transparent resin-based insulating film of μm was obtained. Next, a carbon printing resistor and a copper paste were sequentially screen-printed on the insulating film, and baked at 370 ° C. for 5 minutes in a nitrogen atmosphere.
Then, when L-cut trimming was performed under the same apparatus and conditions as in Example and the surface was observed, there was no scratch on the surface of the resin-based insulating film, but a groove-like scratch was found on the stainless steel plate as the base material. Moreover, it was confirmed that many cracks were generated at the boundary between the insulating film and the stainless steel plate. Also, 5 [K
When a withstand voltage test of V] × 10 [sec] was performed, it was 5
A defect occurred in 41 out of 0 samples.
比較例2 基材として実施例と同様のアルミニウム硬質板を用い、
実施例と同様の前処理を行なった後、下記の組成の絶縁
性樹脂を基材表面にスクリーン印刷した。Comparative Example 2 The same aluminum hard plate as in the example was used as the base material,
After performing the same pretreatment as in the example, an insulating resin having the following composition was screen-printed on the surface of the base material.
次いで、180℃で20分間乾燥後、窒素雰囲気中37
0℃で5分間加熱して硬化させたところ、茶褐色の樹脂
系絶縁膜が得られた。この絶縁膜上にカーボン印刷抵
抗,銅ペーストを順次スクリーン印刷した後、窒素雰囲
気中370℃で5分間加熱して硬化させ、膜抵抗基板を
得た。この膜抵抗基板上の電極とアルミニウム基材間に
5[KV]×10[sec ]耐電圧試験を行ない、パスし
た基板について実施例と同装置,同条件でLカットトリ
ミングを行なった。トリミング後、膜抵抗体周囲を顕微
鏡で観察した結果、樹脂系絶縁膜にもクラックや切り溝
が入っており、レーザトリミングが絶縁膜に著しい損傷
を与えていることが確認された。また、50サンプルに
ついて同様の耐電圧試験を行なった結果、13サンプル
について不良発生した。 Then, after drying at 180 ° C. for 20 minutes, 37 in a nitrogen atmosphere
When it was heated and cured at 0 ° C. for 5 minutes, a brown-colored resin-based insulating film was obtained. A carbon printing resistor and a copper paste were sequentially screen-printed on this insulating film, and then heated at 370 ° C. for 5 minutes in a nitrogen atmosphere to be cured to obtain a film resistance substrate. A 5 [KV] × 10 [sec] withstand voltage test was performed between the electrode on the film resistance substrate and the aluminum base material, and the passed substrate was L-cut trimmed under the same apparatus and conditions as in the example. As a result of observing the periphery of the film resistor with a microscope after the trimming, it was confirmed that the resin-based insulating film also had cracks and kerfs, and that the laser trimming significantly damaged the insulating film. Further, as a result of performing the same withstand voltage test on 50 samples, 13 samples failed.
以上の実施例および比較例から明らかなように、予め膜
抵抗体下層に白色顔料を含んだ樹脂系絶縁膜を形成して
おき、その状態でレーザトリミングを行なう本発明の方
法によれば、該絶縁膜がそれに含まれている白色顔料成
分によりレーザビームを反射させる効果を持つ結果、こ
の絶縁膜さらにはその下の基材に損傷を与えることなく
レーザトリミングを行なうことが可能であり、絶縁膜の
耐電圧特性の向上、および膜抵抗体の歩留り向上に寄与
することができる。As is clear from the above Examples and Comparative Examples, according to the method of the present invention in which a resin-based insulating film containing a white pigment is previously formed in the lower layer of the film resistor, and laser trimming is performed in that state, As a result of the insulating film having the effect of reflecting the laser beam by the white pigment component contained therein, it is possible to perform laser trimming without damaging the insulating film and the underlying material. It is possible to contribute to the improvement of withstand voltage characteristics and the yield of the film resistor.
第1図は本発明の一実施例に係る膜抵抗体のレーザトリ
ミング方法を説明するための工程図、第2図は同実施例
におけるレーザトリミング工程後の膜抵抗体を示す図で
ある。 1……基材、2……樹脂系絶縁膜、3……膜抵抗体、4
……電極、5……レーザビーム。FIG. 1 is a process diagram for explaining a laser trimming method for a film resistor according to an embodiment of the present invention, and FIG. 2 is a view showing the film resistor after the laser trimming process in the same embodiment. 1 ... Substrate, 2 ... Resin-based insulating film, 3 ... Membrane resistor, 4
... electrodes, 5 ... laser beam.
Claims (4)
抗値となるように調整するレーザトリミング方法におい
て、前記膜抵抗体の下層部に予め白色顔料を含む樹脂系
絶縁膜を形成しておき、その状態でレーザトリミングを
行なうことを特徴とする膜抵抗体のレーザビーム方法。1. A laser trimming method for irradiating a film resistor with a laser beam so as to obtain a predetermined resistance value, wherein a resin-based insulating film containing a white pigment is previously formed in a lower layer of the film resistor. A laser beam method for a film resistor, wherein laser trimming is performed in that state.
鉛,塩基性炭酸鉛,硫酸バリウム,硫化亜鉛,塩基性硫
酸鉛,酸化アンチモン,シリカ,アルミナから選択した
少なくとも一種を用いることを特徴とする特許請求の範
囲第1項記載の膜抵抗体のレーザトリミング方法。2. A patent using at least one selected from titanium oxide, zinc oxide, basic lead carbonate, barium sulfate, zinc sulfide, basic lead sulfate, antimony oxide, silica and alumina as the white pigment. A laser trimming method for a film resistor according to claim 1.
成分としてポリブタジエン樹脂,エポキシ樹脂,ポリイ
ミド樹脂,フェノキシ樹脂,ビスマリイミド樹脂アクリ
ル樹脂,フェノール樹脂から選択した少なくとも一種を
用いることを特徴とする特許請求の範囲第1項記載の膜
抵抗体のレーザトリミング方法。3. At least one selected from polybutadiene resin, epoxy resin, polyimide resin, phenoxy resin, bismaliimide resin acrylic resin, and phenol resin is used as a resin component in the resin-based insulating film containing the white pigment. A laser trimming method for a film resistor according to claim 1.
量が1wt.%〜60wt.%であることを特徴とする特許
請求の範囲第1項記載の膜抵抗体のレーザトリミング方
法。4. The content of the white pigment in the resin-based insulating film is 1 wt. % -60 wt. The laser trimming method for a film resistor according to claim 1, wherein the ratio is%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049978A JPH0640563B2 (en) | 1985-03-13 | 1985-03-13 | Laser trimming method for membrane resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60049978A JPH0640563B2 (en) | 1985-03-13 | 1985-03-13 | Laser trimming method for membrane resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61208250A JPS61208250A (en) | 1986-09-16 |
| JPH0640563B2 true JPH0640563B2 (en) | 1994-05-25 |
Family
ID=12846103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60049978A Expired - Lifetime JPH0640563B2 (en) | 1985-03-13 | 1985-03-13 | Laser trimming method for membrane resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640563B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01184861A (en) * | 1988-01-13 | 1989-07-24 | Toshiba Corp | Trimming using laser light beam |
-
1985
- 1985-03-13 JP JP60049978A patent/JPH0640563B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61208250A (en) | 1986-09-16 |
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| Date | Code | Title | Description |
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| EXPY | Cancellation because of completion of term |