JPH0645143A - Magnetic thin film - Google Patents
Magnetic thin filmInfo
- Publication number
- JPH0645143A JPH0645143A JP1226992A JP1226992A JPH0645143A JP H0645143 A JPH0645143 A JP H0645143A JP 1226992 A JP1226992 A JP 1226992A JP 1226992 A JP1226992 A JP 1226992A JP H0645143 A JPH0645143 A JP H0645143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- content
- thin film
- magnetic thin
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3204—Exchange coupling of amorphous multilayers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
Abstract
(57)【要約】
【目的】本発明は、高比抵抗ρ、高飽和磁束密度Ｂｓか
つ低保磁力Ｈｃをもつ透磁率μi 及び高周波数特性の優
れた非晶質軟磁性薄膜を提供することを目的とする。
【構成】本発明は、一層がＭ100-a-b Ｂa Ｆb （ただ
し、ＭはＣｏ、Ｆｅのいずれか１種又は２種、Ｂはホウ
素、Ｆはフッ素、１０≦ａ≦３０ａｔ．％、２≦ｂ≦２
５ａｔ．％）なる式で示す成分系よりなる、層間に非磁
性絶縁層を挾まない積層磁性薄膜を作成する際におい
て、Ｆ含有量を膜厚方向で層毎に交互に変化させ、その
各層間のＦ含有量差を少なくとも２ａｔ．％とし、さら
に、各層の厚さを３０ｎｍ以下で積層して構成する。
(57) [Summary] [Object] The present invention provides an amorphous soft magnetic thin film having a high specific resistance ρ, a high saturation magnetic flux density Bs, a low coercive force Hc, a magnetic permeability μ i and a high frequency characteristic. The purpose is to [Structure] In the present invention, one layer is M 100-ab B a F b (where M is one or two of Co and Fe, B is boron, F is fluorine, 10 ≦ a ≦ 30 at.%, 2 ≦ b ≦ 2
5 at. %), When a laminated magnetic thin film made of a component system represented by the formula: is not sandwiched between the non-magnetic insulating layers, the F content is alternately changed in each layer in the film thickness direction, The F content difference is at least 2 at. %, And the thickness of each layer is 30 nm or less.
Description
【０００１】[0001]
【産業上の利用分野】本発明は高周波帯域で用いられる
インダクタ、トランスなどの磁心材料に適したＦ含有量
変調非晶質積層軟磁性薄膜に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an F content modulated amorphous laminated soft magnetic thin film suitable for magnetic core materials such as inductors and transformers used in a high frequency band.
【０００２】[0002]
【従来の技術】半導体製品の進歩、電子部品の実装技術
の進歩により、電子機器は非常に速いテンポで小型化、
軽量化がなされており、それに伴って電子部品の高周波
化が進み、それとともに高周波領域で優れた軟磁気特性
をもつ材料が機器用磁心として望まれている。このよう
な磁心用材料としてはフェライトやアモルファス合金な
どが用いられてきた。2. Description of the Related Art Due to the progress of semiconductor products and the mounting technology of electronic parts, electronic equipment has been miniaturized at a very fast tempo,
The weight has been reduced, and along with this, the frequency of electronic components has been increased, and along with this, materials having excellent soft magnetic characteristics in the high frequency region have been desired as magnetic cores for equipment. Ferrite and amorphous alloys have been used as such magnetic core materials.
【０００３】[0003]
【発明が解決しようとする課題】高い周波数帯域で用い
られる場合には、渦電流による損失を小さくするために
材料の厚みが薄く、比抵抗（ρ）の大きいこと並びに自
然共鳴周波数を高めるために飽和磁束密度（Ｂｓ）の大
きいことが特に要求される。When used in a high frequency band, in order to reduce the loss due to eddy current, the material is thin, the specific resistance (ρ) is large, and the natural resonance frequency is increased. It is particularly required that the saturation magnetic flux density (Bs) is large.
【０００４】これらの要求に対し、材料厚については薄
膜化での対応がある。ρ、Ｂｓについてはフェライトで
はρが抜群に優れる（１０3 〜１０6 Ω・ｃｍ）ものの
Ｂｓがたかだか５ｋＧと小さいので自然共鳴周波数が低
く、また、焼結体から小型のチップを加工することは非
常に困難なことであり、さらに、薄膜作成を目的として
蒸着によるスピネル構造の成膜は検討されているが応用
には至っていない。また、アモルファス金属は結晶質金
属よりもρの大きい点が特徴であるが、このρをさらに
向上させると一般にはＢｓが単純希釈的に低下する。To meet these demands, there is a measure to reduce the material thickness. Regarding ρ and Bs, ρ is outstandingly superior to ferrite (10 3 -10 6 However, since Bs is as small as 5 kG, the natural resonance frequency is low, and it is very difficult to process a small chip from a sintered body. Furthermore, spinel by vapor deposition is used to form a thin film. The film formation of the structure has been studied but has not been applied yet. Amorphous metals are characterized by having a larger ρ than crystalline metals, but if this ρ is further improved, Bs generally decreases in a simple dilution manner.
【０００５】ところで、本発明者らの一部が先に開示し
た特開昭６２−２４６０５号公報および本発明者による
特願平３−５８９０４号では（Ｃｏ−Ｆｅ）−Ｂ−Ｆ成
分系において高ＢｓおよびＦ含有量の増加に伴ってρが
向上する非晶質膜を得ているが、これらの技術ではＦを
多量に含有させると保磁力Ｈｃの大幅な増加をまねく。By the way, in Japanese Unexamined Patent Publication No. 62-24605 disclosed by some of the present inventors and Japanese Patent Application No. 3-58904 by the present inventors, a (Co-Fe) -BF component system is used. Although an amorphous film in which ρ is improved with an increase in high Bs and F content is obtained, in these techniques, a large amount of F causes a large increase in coercive force Hc.
【０００６】本発明は上記の事情に鑑みてなされたもの
で、高ρ、高Ｂｓかつ低保磁力（Ｈｃ）をもつ透磁率
（μi ）及び高周波数特性の優れた非晶質軟磁性薄膜を
提供することを目的とする。The present invention has been made in view of the above circumstances, and is an amorphous soft magnetic thin film having high ρ, high Bs, low coercive force (Hc) and excellent magnetic permeability (μ i ) and high frequency characteristics. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段及び作用】本発明者らはＭ
100-a-b Ｂa Ｆb （ただし、ＭはＣｏ、Ｆｅのいずれか
１種または２種、Ｂはホウ素、Ｆはフッ素であり、１０
≦ａ≦３０ａｔ．％、２≦ｂ≦２５ａｔ．％）或はＭ
100-a-b-c Ｂa Ｆb Ｐｄc （ただし、Ｐｄはパラヂウム
であり、１≦ｃ≦５ａｔ．％、１０≦ａ＋ｂ＋ｃ≦５０
ａｔ．％）なる式で示される夫々の合金を用いて、一層
のＦ含有量が上記範囲にあり、かつ層間のＦ含有量の差
が２ａｔ．％以上になるようにＦ含有量を交互に変化さ
せ、さらに、各層当たりの膜厚を３０ｎｍ以下にして、
膜厚方向に非磁性絶縁層を挾まないで積層させたＦ含有
量変調膜とすることによって、従来高Ｆ含有量域では得
られなかった保磁力Ｈｃが低くてしかも高ρ、高Ｂｓを
もち、μi とその周波数特性の優れた非晶質軟磁性薄膜
を得ることを新規に知見したものである。Means and Actions for Solving the Problems
100-ab B a F b (where M is one or two of Co and Fe, B is boron, F is fluorine, and
≦ a ≦ 30 at. %, 2 ≦ b ≦ 25 at. %) Or M
100-abc B a F b Pd c (where Pd is palladium, 1 ≦ c ≦ 5 at.%, 10 ≦ a + b + c ≦ 50
at. %), The F content of one layer is within the above range, and the difference in F content between the layers is 2 at. %, The F content is alternately changed so that the film thickness of each layer is 30 nm or less.
By using an F content modulation film in which a non-magnetic insulating layer is laminated without being sandwiched in the film thickness direction, a coercive force Hc, which was not obtained in the conventional high F content region, is low, and high ρ and high Bs can be obtained. It was newly discovered that an amorphous soft magnetic thin film having excellent μ i and frequency characteristics can be obtained.
【０００８】[0008]
【実施例】以下図面を参照して本発明の実施例を詳細に
説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【０００９】本発明はＭ100-a-b −Ｂa −Ｆb 或はＭ
100-a-b-c −Ｂa −Ｆb −Ｐｄc （ただし、ＭはＣｏ、
Ｆｅのいずれか１種または２種、Ｂはホウ素、Ｆはフッ
素およびＰｄはパラヂウム、１０≦ａ≦３０ａｔ．％、
２≦ｂ≦２５ａｔ．％、１≦ｃ≦５ａｔ．％、１０≦ａ
＋ｂ＋ｃ≦５０ａｔ．％）よりなる高ρ、高Ｂｓ或いは
さらに低λs をもつ、Ｆ量が膜厚方向に層毎に変調した
ことを特徴とする高周波帯域用非晶質軟磁性薄膜であ
る。以下に元素ならびに変調条件の範囲限定理由につい
て説明する。Ｃｏ、Ｆｅいずれか１種または２種の組み
合わせは高Ｂｓを得るための基本元素である。In the present invention, M 100-ab -B a -F b or M
100-abc -B a -F b -Pd c ( however, M is Co,
Any one or two of Fe, B for boron, F for fluorine and Pd for palladium, 10 ≦ a ≦ 30 at. %,
2 ≦ b ≦ 25 at. %, 1 ≦ c ≦ 5 at. %, 10 ≦ a
+ B + c ≦ 50 at. %), Which has a high ρ, a high Bs, or a low λ s, and in which the F amount is modulated layer by layer in the film thickness direction. The reasons for limiting the range of elements and modulation conditions will be described below. Any one or a combination of Co and Fe is a basic element for obtaining high Bs.
【００１０】Ｂは非晶質形成元素であり軟磁気特性の向
上に必要なものであるが１０ａｔ．％に達しない場合は
上記の効果が少なく、３０ａｔ．％を越えると軟磁気特
性を失ってしまうので１０〜３０ａｔ．％に限定した。B is an amorphous forming element, which is necessary for improving soft magnetic characteristics, but is 10 at. % Is less than 30 at. %, The soft magnetic properties will be lost, so 10 to 30 at. Limited to%.
【００１１】Ｆは一層当たりの含有量が２ａｔ．％に達
しない場合は効果が無く、一方、２５ａｔ．％を越える
と変調膜の軟磁気特性が劣化する。また、層間のＦ変調
の含有量差が２ａｔ．％にならない場合には変調の効果
がない。さらに、一層当たりの膜厚が３０ｎｍを越える
と変調膜のＨｃが大きくなり効果が生じなくなる。The content of F per layer is 2 at. %, There is no effect, while 25 at. %, The soft magnetic characteristics of the modulation film deteriorate. In addition, the difference in F modulation content between the layers is 2 at. If it does not reach%, there is no modulation effect. Further, if the film thickness per layer exceeds 30 nm, the Hc of the modulation film becomes large and the effect does not occur.
【００１２】Ｐｄをさらに添加する場合は、その含有量
が１ａｔ．％未満或いは５ａｔ．％を越えると効果が生
じないか磁気特性が劣化する。またこの場合、Ｂ＋Ｆ＋
Ｐｄ含有量の合計が１０ａｔ．％未満或いは５０ａｔ．
％を越えると効果が小さいか磁気特性が劣化する。以下
に本発明の具体的実施例を説明する。 具体的実施例−１When Pd is further added, its content is 1 at. % Or 5 at. If it exceeds%, no effect occurs or the magnetic properties deteriorate. In this case, B + F +
The total Pd content is 10 at. % Or 50 at.
If it exceeds%, the effect is small or the magnetic properties are deteriorated. Specific examples of the present invention will be described below. Specific Example-1
【００１３】対向ＤＣターゲット＋ＲＦターゲットを備
えたマルチターゲットの同時スパッタリング装置を用
い、対向ＤＣスパッタリングには（Ｃｏ0.5 Ｆｅ0.5 ）
80Ｂ20合金ターゲットを、ＲＦスパッタリングにはＦｅ
Ｆ3 化合物ターゲットを使用した。Ｆ含有量はＲＦ出力
を一定にして、ＤＣ出力の増減により調整し図３に示す
ような変調膜を作成した。図３中、＊は各変調層の比抵
抗ρを示す。A multi-target co-sputtering apparatus equipped with a facing DC target and an RF target is used, and (Co 0.5 Fe 0.5 ) is used for facing DC sputtering.
80 B 20 alloy target, Fe for RF sputtering
An F 3 compound target was used. The F content was adjusted by increasing and decreasing the DC output while keeping the RF output constant, and a modulation film as shown in FIG. 3 was produced. In FIG. 3, * indicates the specific resistance ρ of each modulation layer.
【００１４】図３に示すように範囲、条件を満たす本発
明膜は低Ｈｃ、高いρならびに高いＢｓの優れた特性を
もつことが明白である。さらに、図１には本発明例の供
試料１の膜について透磁率μi の周波数特性を代表的に
示したが、優れた高周波特性をもつこともこれから明ら
かである。 具体的実施例−２As shown in FIG. 3, it is apparent that the film of the present invention satisfying the range and conditions has excellent characteristics of low Hc, high ρ and high Bs. Further, FIG. 1 representatively shows the frequency characteristics of the magnetic permeability μ i of the film of the sample 1 of the present invention, but it is also clear from this that it has excellent high frequency characteristics. Specific Example-2
【００１５】対向ＤＣスパッタリングに（Ｃｏ0.5 Ｆｅ
0.5 ）78Ｂ20Ｐｄ2 合金ターゲットを用いた以外は具体
的実施例−１と同様に図４に示した条件で変調膜を作成
して、ρならびに磁気特性を測定した。その結果を図４
に示す。図４中、＊は各変調層の比抵抗ρを示す。図４
から、優れた特性をもつことが明瞭である。また、図２
に示したようにμi の周波数特性も優れることが分か
る。For opposing DC sputtering (Co 0.5 Fe
0.5 ) A modulation film was prepared under the conditions shown in FIG. 4 in the same manner as in Example 1 except that a 78 B 20 Pd 2 alloy target was used, and ρ and magnetic properties were measured. The result is shown in Figure 4.
Shown in. In FIG. 4, * indicates the specific resistance ρ of each modulation layer. Figure 4
Therefore, it is clear that it has excellent characteristics. Also, FIG.
As shown in, it can be seen that the frequency characteristics of μ i are also excellent.
【００１６】[0016]
【発明の効果】以上述べたように本発明によれば、Ｍ
100-a-b Ｂa Ｆb （ただし、ＭはＣｏ、Ｆｅのいずれか
１種または２種、Ｂはホウ素、Ｆはフッ素であり、１０
≦ａ≦３０ａｔ．％、２≦ｂ≦２５ａｔ．％）或はＭ
100-a-b-c −Ｂa −Ｆb −Ｐｄc （ただし、Ｐｄはパラ
ヂウムであり、１≦ｃ≦５ａｔ．％、１０≦ａ＋ｂ＋ｃ
≦５０ａｔ．％）なる式で示される夫々の合金におい
て、一層のＦ含有量が上記範囲にあり、かつ層間のＦ含
有量の差が２ａｔ．％以上になるようにＦ含有量を交互
に変化させて各層当たりの膜厚を３０ｎｍ以下にして膜
厚方向に積層させたＦ含有量変調膜とすることによっ
て、従来高Ｆ含有量域では得られなかった低保磁力なら
びに低飽和磁歪でしかも高ρ、高Ｂｓをもち、μi とそ
の周波数特性の優れた非晶質軟磁性薄膜が得られること
がわかり、この工業的意義、産業界に及ぼす効果は大き
い。As described above, according to the present invention, M
100-ab B a F b (where M is one or two of Co and Fe, B is boron, F is fluorine, and
≦ a ≦ 30 at. %, 2 ≦ b ≦ 25 at. %) Or M
100-abc -B a -F b -Pd c ( however, Pd is Palladium, 1 ≦ c ≦ 5at.% , 10 ≦ a + b + c
≤50 at. %), The F content of one layer is in the above range, and the difference in F content between the layers is 2 at. In the conventional high F content region, the F content modulation film was obtained by alternately changing the F content so as to be not less than 30% and making the film thickness of each layer 30 nm or less to be laminated in the film thickness direction. It was found that an amorphous soft magnetic thin film with low coercive force, low saturation magnetostriction, high ρ and high Bs, and excellent μ i and its frequency characteristics could be obtained. It has a great effect.
【図１】本発明に関わるＣｏ−Ｆｅ−Ｂ−Ｆ合金による
Ｆ含有量変調非晶質軟磁性薄膜の透磁率の周波数特性を
示す特性図である。FIG. 1 is a characteristic diagram showing frequency characteristics of magnetic permeability of an F content-modulated amorphous soft magnetic thin film made of a Co—Fe—B—F alloy according to the present invention.
【図２】本発明に関わるＣｏ−Ｆｅ−Ｂ−Ｆ−Ｐｄ合金
によるＦ含有量変調非晶質軟磁性薄膜の透磁率の周波数
特性を示す特性図である。FIG. 2 is a characteristic diagram showing frequency characteristics of magnetic permeability of an F content-modulated amorphous soft magnetic thin film made of a Co—Fe—B—F—Pd alloy according to the present invention.
【図３】本発明の具体的実施例−１の条件及び諸特性を
比較例とともに示す説明図である。FIG. 3 is an explanatory diagram showing conditions and various characteristics of Concrete Example-1 of the present invention together with Comparative Examples.
【図４】本発明の具体的実施例−２の条件及び諸特性を
示す説明図である。FIG. 4 is an explanatory diagram showing conditions and various characteristics of Concrete Example-2 of the present invention.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年２月１８日[Submission date] February 18, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図３[Name of item to be corrected] Figure 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図３】 [Figure 3]
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】図４[Name of item to be corrected] Figure 4
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図４】 [Figure 4]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 古川 伸治 宮城県仙台市青葉区南吉成六丁目６番地の ３ 株式会社アモルファス・電子デバイス 研究所内 (72)発明者 松本 文夫 宮城県仙台市青葉区南吉成六丁目６番地の ３ 株式会社アモルファス・電子デバイス 研究所内 (72)発明者 藤森 啓安 宮城県仙台市青葉区吉成２−20−３ (72)発明者 増本 健 宮城県仙台市青葉区上杉３−８−22 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Shinji Furukawa, 6-6 Minamiyoshinari, Minamiyoshinari, Aoba-ku, Sendai-shi, Miyagi 3 Amorphous / Electronic Device Laboratory, Inc. 6-chome 3 Amorphous / Electronic Devices Co., Ltd. (72) Inventor Keiyasu Fujimori 2-20-3 Yoshinari Aoba-ku, Sendai-shi, Miyagi Prefecture (72) Ken Ken Masumoto 3-8-Uesugi, Aoba-ku, Sendai-shi, Miyagi Prefecture twenty two
Claims (2)
はＣｏ、Ｆｅのいずれか１種又は２種、Ｂはホウ素、Ｆ
はフッ素、１０≦ａ≦３０ａｔ．％、２≦ｂ≦２５ａ
ｔ．％）なる式で示す成分系よりなる、層間に非磁性絶
縁層を挾まない積層磁性薄膜を作成する際において、Ｆ
含有量を膜厚方向で層毎に交互に変化させ、その各層間
のＦ含有量差を少なくとも２ａｔ．％とし、さらに、各
層の厚さを３０ｎｍ以下で積層することを特徴とするＦ
含有量変調非晶質軟磁性薄膜。1. One layer is M 100-ab B a F b (where M is
Is one or two of Co and Fe, B is boron, F
Is fluorine, 10 ≦ a ≦ 30 at. %, 2 ≦ b ≦ 25a
t. %) When a laminated magnetic thin film made of a component system represented by the formula
The content is alternately changed layer by layer in the film thickness direction, and the F content difference between the layers is at least 2 at. %, And the thickness of each layer is 30 nm or less.
Content-modulated amorphous soft magnetic thin film.
だし、ＭはＣｏ、Ｆｅのいずれか１種又は２種、Ｂはホ
ウ素、Ｆはフッ素、Ｐｄはパラヂウム、１０≦ａ≦３０
ａｔ．％、２≦ｂ≦２５ａｔ．％、１≦ｃ≦５ａｔ．
％、１０≦ａ＋ｂ＋ｃ≦５０ａｔ．％）なる式で示す成
分系よりなる、層間に非磁性絶縁層を挾まない積層磁性
薄膜を作成する際において、Ｆ含有量を膜厚方向で層毎
に交互に変化させ、その各層間のＦ含有量差を少なくと
も２ａｔ．％とし、さらに、各層の厚さを３０ｎｍ以下
で積層することを特徴とするＦ含有量変調非晶質軟磁性
薄膜。2. One layer of M 100-abc B a F b Pd c (wherein M is one or two of Co and Fe, B is boron, F is fluorine, Pd is palladium, and 10 ≦ a ≦ Thirty
at. %, 2 ≦ b ≦ 25 at. %, 1 ≦ c ≦ 5 at.
%, 10 ≦ a + b + c ≦ 50 at. %), When a laminated magnetic thin film made of a component system represented by the formula: is not sandwiched between the non-magnetic insulating layers, the F content is alternately changed in each layer in the film thickness direction, The F content difference is at least 2 at. %, And further, each layer is laminated with a thickness of 30 nm or less, and an F content-modulated amorphous soft magnetic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1226992A JPH0666190B2 (en) | 1992-01-27 | 1992-01-27 | Magnetic thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1226992A JPH0666190B2 (en) | 1992-01-27 | 1992-01-27 | Magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0645143A true JPH0645143A (en) | 1994-02-18 |
| JPH0666190B2 JPH0666190B2 (en) | 1994-08-24 |
Family
ID=11800653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1226992A Expired - Lifetime JPH0666190B2 (en) | 1992-01-27 | 1992-01-27 | Magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0666190B2 (en) |
-
1992
- 1992-01-27 JP JP1226992A patent/JPH0666190B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0666190B2 (en) | 1994-08-24 |
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