JPH0647015Y2 - Growth crystal cooling tool - Google Patents
Growth crystal cooling toolInfo
- Publication number
- JPH0647015Y2 JPH0647015Y2 JP1990100581U JP10058190U JPH0647015Y2 JP H0647015 Y2 JPH0647015 Y2 JP H0647015Y2 JP 1990100581 U JP1990100581 U JP 1990100581U JP 10058190 U JP10058190 U JP 10058190U JP H0647015 Y2 JPH0647015 Y2 JP H0647015Y2
- Authority
- JP
- Japan
- Prior art keywords
- shaft
- crystal
- pulling
- pull
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 41
- 238000001816 cooling Methods 0.000 title claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 12
- 239000000155 melt Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】 ［考案の目的］ （産業上の利用分野） 本考案は引上げ法によって単結晶を製造するに際し、結
晶の上方からガスを吹付ける場合に使用する育成結晶冷
却用具に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial field of application) The present invention relates to a grown crystal cooling tool used when a gas is blown from above a crystal in producing a single crystal by a pulling method.
（従来の技術） 引上げ法とは単結晶を作成するための手法であり、とり
わけ第２図ではチョクラルスキー法（以下CZ法と称す）
が示されている。第２図に示すように単結晶育成炉１内
にるつぼ２を設け、この内部に原料を入れる。そして外
部から高周波加熱コイル３により加熱して融液４をつく
り、この融液内に種結晶５を浸し、この結晶を上方に引
上げることにより単結晶を製造する方法である。(Prior Art) The pulling method is a method for producing a single crystal, and in particular, the Czochralski method (hereinafter referred to as the CZ method) in FIG.
It is shown. As shown in FIG. 2, a crucible 2 is provided in a single crystal growth furnace 1 and a raw material is put therein. Then, it is a method of manufacturing a single crystal by heating from outside with a high frequency heating coil 3 to form a melt 4, immersing a seed crystal 5 in the melt, and pulling this crystal upward.
この場合、結晶にガスを吹付けて放熱を促進させること
が結晶育成上有効であると言われており、吹付手段とし
ては単結晶育成炉に固定して設けられたガス吹付口６を
介して結晶の横方向から吹付けていた。In this case, it is said that it is effective for crystal growth to spray gas onto the crystal to promote heat dissipation, and as a spraying means, a gas spraying port 6 fixedly provided in the single crystal growing furnace is used. It was spraying from the side of the crystal.
（考案が解決しようとする課題） 上記従来装置によれば、ガスの吹付けは結晶の横方向か
らであるため、温度環境の不均一が生じやすい、又育成
結晶の径の大小によって放熱効果が異なること、及び融
液表面にも影響が及ぼされる欠点を有している。(Problems to be Solved by the Invention) According to the above-mentioned conventional device, since the gas is sprayed from the lateral direction of the crystal, temperature environment is likely to be non-uniform, and the heat dissipation effect depends on the size of the grown crystal. It has the disadvantage of being different and also affecting the melt surface.
本考案は上記問題を解決するためになされたものであ
り、放熱効率を上げると同時に融液表面への影響を少な
くした育成結晶冷却用具を提供することを目的としてい
る。The present invention has been made to solve the above problems, and an object of the present invention is to provide a grown crystal cooling tool that improves the heat dissipation efficiency and reduces the influence on the melt surface.
［考案の構成］ （課題を解決するための手段及び作用） 上記目的を達成するため、本考案は単結晶育成炉内にあ
るるつぼの上方に設けた筒状側壁を有するガイドと、前
記ガイド底面の中心穴に上下動可能に挿通した引上軸シ
ャフトと、前記引上軸シャフト下端に連結具を介して接
続した種結晶を固定するアルミナ管とを有し、前記ガイ
ド内にある引上軸シャフトにはその周縁に連結穴を穿っ
て当該引上軸シャフトの内部に設けた穴と連通させると
共に、前記引上軸シャフトの内部に設けた穴はこの引上
軸シャフトと接続する連続具及びアルミナ管を貫通して
種結晶固定位置にまで至るように構成した。[Configuration of Device] (Means and Actions for Solving the Problem) In order to achieve the above object, the present invention has a guide having a cylindrical side wall provided above a crucible in a single crystal growth furnace, and a bottom surface of the guide. A pull-up shaft that is vertically movably inserted into the center hole of the pull-up shaft, and an alumina tube for fixing a seed crystal that is connected to the lower end of the pull-up shaft shaft through a connector, A connecting hole is formed in the shaft at its periphery to communicate with a hole provided inside the pull-up shaft shaft, and the hole provided inside the pull-up shaft shaft is connected to the pull-up shaft shaft by a continuous tool and It was constructed so as to penetrate the alumina tube and reach the seed crystal fixing position.
したがってガイド内を通ったガスは連通穴を介して引上
軸内に入り、更にアルミナ管の穴を流下して種結晶の囲
りを冷却する。Therefore, the gas that has passed through the guide enters the pulling shaft through the communication hole, and further flows down through the hole of the alumina tube to cool the surrounding of the seed crystal.
一方、引上軸に沿って流下したガスも種結晶の囲りを冷
却する。On the other hand, the gas flowing down along the pulling axis also cools the surroundings of the seed crystal.
（実施例） 以下図面を参照して実施例を説明する。(Examples) Examples will be described below with reference to the drawings.
第１図は本考案による育成結晶冷却用具の一実施例の構
成図であり、要部のみを示す。７はガイドであって、こ
の内部には引上軸シャフト８（以後シャフトと称す）が
挿通され、このシャフト８は上部においてロードセル
（図示せず）に接続されている。９はアルミナ管であっ
て下部において種結晶５を保持し、このアルミナ管９と
シャフト８とは連結具10を介して接続されている。11は
締結具,12はネジである。13はシャフト８に設けた連結
穴であり、内部に設けた穴14につながっている。FIG. 1 is a configuration diagram of an embodiment of a grown crystal cooling tool according to the present invention, and shows only a main part. Reference numeral 7 denotes a guide, through which a pull-up shaft shaft 8 (hereinafter referred to as a shaft) is inserted, and the shaft 8 is connected to a load cell (not shown) at the upper portion. Reference numeral 9 denotes an alumina tube, which holds the seed crystal 5 in the lower part, and the alumina tube 9 and the shaft 8 are connected to each other via a connecting tool 10. 11 is a fastener and 12 is a screw. Reference numeral 13 is a connecting hole provided in the shaft 8 and is connected to a hole 14 provided inside.
次に作用について説明する。Next, the operation will be described.
シャフト８は上部にある図示しない制御装置によって上
方へ引上げられる。この場合はアルミナ管の先端に種結
晶５が固定され、図示しない融液に浸された状態にあ
る。この時、ガイド７内を上方から吹付けるガス流は図
示矢印にしたがってシャフト内に入り、更にこれが穴14
を貫通して種結晶５の囲りを冷却する。The shaft 8 is pulled upward by a control device (not shown) at the top. In this case, the seed crystal 5 is fixed to the tip of the alumina tube and is immersed in a melt not shown. At this time, the gas flow blown from above in the guide 7 enters into the shaft according to the arrow shown in the figure, and this further flows into the hole 14.
Through which the seed crystal 5 is cooled.
一方、シャフト８とガイド７との間の下方の隙間15から
吹出したガス流も、併て種結晶を上方から冷却すること
になる。On the other hand, the gas flow blown out from the lower gap 15 between the shaft 8 and the guide 7 also cools the seed crystal from above.
［考案の効果］ 以上説明したように、本考案によれば結晶上端部に直接
ガスを吹付けるようにしたため、結晶からの放熱効率を
上げられ、その結果ガス流量を少なくできるため、融液
表面への影響が少なくなり、結晶を安定して育成でき
る。また、CZ法の高温育成ではるつぼにIr製を用いるこ
とから、育成雰囲気の酸素分圧が０〜1or2％と限られる
が、本用具を用いれば、炉内に導入されるガス系統とは
別個に酸素分圧を設定できるため、るつぼに対する影響
が少なくなり、酸素分圧の使用範囲を広げることができ
る。したがって、酸素欠損し易い酸化物単結晶の育成に
おいて、より高品質な酸化物結晶を育成することが可能
となる。[Effect of the Invention] As described above, according to the present invention, the gas is blown directly to the upper end of the crystal, so that the heat radiation efficiency from the crystal can be improved, and as a result, the gas flow rate can be reduced, so that the melt surface can be reduced. The influence on the crystal is reduced, and the crystal can be stably grown. Also, since the crucible made of Ir is used in the high temperature growth of the CZ method, the oxygen partial pressure of the growth atmosphere is limited to 0 to 1 or 2%, but if this tool is used, it is separate from the gas system introduced into the furnace. Since the oxygen partial pressure can be set to, the influence on the crucible is reduced and the range of use of the oxygen partial pressure can be expanded. Therefore, it becomes possible to grow a higher quality oxide crystal in the growth of an oxide single crystal that easily suffers from oxygen deficiency.
第１図は本考案による育成結晶冷却用具の一実施例の構
成図、第２図は従来装置を説明する図である。 １……単結晶育成炉、２……るつぼ ３……高周波加熱コイル、４……融液 ５……種結晶、６……ガス吹付口 ７……ガイド、８……引上軸シャフト ９……アルミナ管、10……連結具 11……締結具、12……ネジ 13……連結穴、14……穴FIG. 1 is a block diagram of an embodiment of a grown crystal cooling tool according to the present invention, and FIG. 2 is a view for explaining a conventional device. 1 ... Single crystal growth furnace, 2 ... Crucible 3 ... High frequency heating coil, 4 ... Melt 5 ... Seed crystal, 6 ... Gas injection port 7 ... Guide, 8 ... Pulling shaft 9 ... … Alumina tube, 10 …… Coupling 11 …… Fastener, 12 …… Screw 13 …… Coupling hole, 14 …… Hole
Claims (1)
用する育成結晶冷却用具において、単結晶育成炉内にあ
るるつぼの上方に設けた筒状側壁を有するガイドと、前
記ガイド底面の中心穴に上下動可能に挿通した引上軸シ
ャフトと、前記引上軸シャフト下端に連結具を介して接
続した種結晶を固定するアルミナ管とを有し、前記ガイ
ド内にある引上軸シャフトにはその周縁に連結穴を穿っ
て当該引上軸シャフトの内部に設けた穴と連通させると
共に、前記引上軸シャフトの内部に設けた穴はこの引上
軸シャフトと接続する連結具及びアルミナ管を貫通して
種結晶固定位置にまで至ることを特徴とする育成結晶冷
却用具。1. A grown crystal cooling tool used when a single crystal is produced by a pulling method, comprising a guide having a cylindrical side wall provided above a crucible in a single crystal growth furnace, and a center hole on the bottom surface of the guide. A pulling-up shaft shaft that is vertically movably inserted into the pulling-up shaft shaft, and an alumina tube for fixing a seed crystal that is connected to the lower end of the pulling-up shaft shaft through a connecting tool. A connecting hole is formed in the periphery to communicate with a hole provided inside the pull-up shaft shaft, and the hole provided inside the pull-up shaft shaft is provided with a connecting tool and an alumina tube connected to the pull-up shaft shaft. A grown crystal cooling tool characterized in that it penetrates to reach a seed crystal fixing position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990100581U JPH0647015Y2 (en) | 1990-09-26 | 1990-09-26 | Growth crystal cooling tool |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990100581U JPH0647015Y2 (en) | 1990-09-26 | 1990-09-26 | Growth crystal cooling tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0456765U JPH0456765U (en) | 1992-05-15 |
| JPH0647015Y2 true JPH0647015Y2 (en) | 1994-11-30 |
Family
ID=31843343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990100581U Expired - Lifetime JPH0647015Y2 (en) | 1990-09-26 | 1990-09-26 | Growth crystal cooling tool |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0647015Y2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS538374A (en) * | 1976-07-12 | 1978-01-25 | Hitachi Ltd | Growing method for single crystal of semiconductor |
-
1990
- 1990-09-26 JP JP1990100581U patent/JPH0647015Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0456765U (en) | 1992-05-15 |
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