JPH0647234A - Method for removing harmful substance in cvd exhaust gas - Google Patents
Method for removing harmful substance in cvd exhaust gasInfo
- Publication number
- JPH0647234A JPH0647234A JP4173740A JP17374092A JPH0647234A JP H0647234 A JPH0647234 A JP H0647234A JP 4173740 A JP4173740 A JP 4173740A JP 17374092 A JP17374092 A JP 17374092A JP H0647234 A JPH0647234 A JP H0647234A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- cvd
- catalyst
- diameter
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000000126 substance Substances 0.000 title description 6
- 239000007789 gas Substances 0.000 claims abstract description 52
- 239000003054 catalyst Substances 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000002808 molecular sieve Substances 0.000 claims abstract description 13
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 13
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011148 porous material Substances 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 15
- 238000001179 sorption measurement Methods 0.000 abstract description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 8
- 235000019441 ethanol Nutrition 0.000 abstract description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 2
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 abstract 1
- 229910004014 SiF4 Inorganic materials 0.000 abstract 1
- PPNAOCWZXJOHFK-UHFFFAOYSA-N manganese(2+);oxygen(2-) Chemical class [O-2].[Mn+2] PPNAOCWZXJOHFK-UHFFFAOYSA-N 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000003463 adsorbent Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001784 detoxification Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 235000013162 Cocos nucifera Nutrition 0.000 description 1
- 244000060011 Cocos nucifera Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 for example Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Landscapes
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Treating Waste Gases (AREA)
- Separation Of Gases By Adsorption (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、テトラエトキシシラン
(TEOS)等の有機化合物を原料ガスとして用いるC
VD法排ガスの除害方法に係り、特にCVD反応室をフ
ッ素系ガスでクリーニングした際の排ガスを併せて処理
する除害方法に関する。BACKGROUND OF THE INVENTION The present invention relates to C using an organic compound such as tetraethoxysilane (TEOS) as a source gas.
The present invention relates to a method of removing exhaust gas from a VD method, and more particularly, to a method of removing exhaust gas when a CVD reaction chamber is cleaned with a fluorine-based gas.
【0002】[0002]
【従来の技術】近年、超LSIの高集積化、高密度化に
伴い、CVD法によるシリコン酸化膜形成に従来のモノ
シラン等の水素化物に代えて、TEOSを代表とする有
機化合物が採用されるようになって来ている。水素化物
を使ったプロセスからの排ガスの除害処理についてはい
くつかの方法が提案されているが、有機化合物を使った
CVD排ガスの除害については活性炭を主体とする吸着
剤による処理法が考えられる。2. Description of the Related Art In recent years, with higher integration and higher density of VLSI, an organic compound represented by TEOS is adopted for forming a silicon oxide film by a CVD method in place of a conventional hydride such as monosilane. Is coming. Although several methods have been proposed for the detoxification treatment of exhaust gas from processes using hydrides, for the decontamination of CVD exhaust gas using organic compounds, a treatment method using an adsorbent mainly composed of activated carbon is considered. To be
【0003】また、CVD反応室は、室内に堆積した反
応生成物を定期的に除去するためCF4 、NF3 などの
フッ素系ガスでクリーニング処理を行うが、この際の排
ガスを除害する方法としてアルカリ金属を添着した活性
炭(特開昭58−122025号公報)、酸化マグネシ
ウム(特開昭62−42727号公報)等で吸着処理を
行う方法がある。Further, the CVD reaction chamber is subjected to a cleaning treatment with a fluorine-based gas such as CF 4 , NF 3 or the like in order to periodically remove the reaction products accumulated in the chamber, but the exhaust gas at this time is removed. There is a method of performing adsorption treatment with activated carbon (JP-A-58-1222025) or magnesium oxide (JP-A-62-42727) impregnated with an alkali metal.
【0004】[0004]
【発明が解決しようとする課題】本発明者等がTEOS
等の有機系化合物を用いるCVD法からの排ガスとフッ
素系クリーニング系からの排出ガスを交互に活性炭吸着
剤を用いて処理したところ、活性炭はSiF4 の吸着量
が少ないので、全体としての活性炭吸着剤のライフは、
クリーニング排ガス中のSiF4 の量によって大きく左
右されてしまった。DISCLOSURE OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION
Exhaust gas from the CVD method using organic compounds such as, for example, and exhaust gas from the fluorine-based cleaning system were treated alternately using an activated carbon adsorbent. Since activated carbon has a small SiF 4 adsorption amount, activated carbon adsorption as a whole The life of the agent is
It was greatly influenced by the amount of SiF 4 in the cleaning exhaust gas.
【0005】TEOS等の有機化合物を用いるCVD排
ガス中にはTEOS等の有機物質の他に、アルコール、
アルデヒド等の多様な有機物質が含まれており、一方、
クリーニング排ガス中にはSiF4 、F2 等のフッ素系
物質が含まれており、これらの全く性質の異なる物質を
含む排ガスを併せて処理するためには、汎用性の高い吸
着剤を使用しなければならないが、このような吸着剤は
未だ知られていない。In the CVD exhaust gas using an organic compound such as TEOS, alcohol other than TEOS and other organic substances,
It contains various organic substances such as aldehydes, while
The cleaning exhaust gas contains fluorine-based substances such as SiF 4 and F 2 , and in order to treat the exhaust gas containing these substances with completely different properties, a highly versatile adsorbent must be used. However, such adsorbents are not yet known.
【0006】[0006]
【課題を解決するための手段】本発明は、次に示す4つ
の発明よりなるものである。The present invention comprises the following four inventions.
【0007】(1)有機化合物を用いるCVD法排ガス
の除害処理方法において、該排ガスを平均孔径が9Å以
上のモレキュラーシーブと接触させることを特徴とする
CVD法排ガスの除害方法。(1) A method for removing waste gas from a CVD method using an organic compound, which comprises contacting the exhaust gas with a molecular sieve having an average pore size of 9Å or more.
【0008】(2)モレキュラーシーブと接触させた後
酸素の共存下に酸化触媒と接触させることを特徴とする
前記(1)記載のCVD法排ガスの除害方法。(2) The method for removing exhaust gas from a CVD method according to (1) above, which comprises contacting with a molecular sieve and then contacting with an oxidation catalyst in the presence of oxygen.
【0009】(3)120〜200℃の範囲内の温度で
酸化触媒と接触させることを特徴とする前記(2)記載
のCVD法排ガスの除害方法。(3) The method for removing exhaust gas from a CVD method according to (2) above, which comprises contacting with an oxidation catalyst at a temperature in the range of 120 to 200 ° C.
【0010】(4)共存する酸素の量を、排ガス中に共
存するCH3 CHO、C2 H5 OH、COを完全に酸化
しうる理論酸素量の合計量以上に常時保持することを特
徴とする前記(2)又は(3)記載のCVD法排ガスの
除害方法。(4) It is characterized in that the amount of coexisting oxygen is always kept above the total amount of theoretical oxygen capable of completely oxidizing CH 3 CHO, C 2 H 5 OH and CO coexisting in the exhaust gas. The method for removing exhaust gas from a CVD method according to (2) or (3) above.
【0011】本発明者等は、上記CVD法から排出され
る排ガスとフッ素系クリーニング排ガスの双方を処理す
る方法について種々検討した結果発明をなすに至った。The inventors of the present invention have made various inventions as a result of various studies on methods for treating both the exhaust gas discharged from the above CVD method and the fluorine-based cleaning exhaust gas.
【0012】以下、本発明を詳しく説明する。TEOS
等の有機化合物を用いるCVD法排ガス中には、未分解
の有機化合物と、その分解生成物である一酸化炭素、エ
チルアルコール、アセトアルデヒド、ジエチルエーテ
ル、アセトン等の有害成分が含まれている。これらのう
ち、一酸化炭素以外は、平均孔径9Å未満のゼオライト
でも比較的容易に吸着できるが、フッ素クリーニング排
ガス中に含まれているSiF4 、F2 などの有害成分は
平均孔径9Åのモレキュラーシーブでは吸着処理できる
が平均孔径が小さくなると吸着効果がないので除害効果
が悪くなり、孔径5Å以下のモレキュラーシーブは吸着
力が極めて悪い。The present invention will be described in detail below. TEOS
The exhaust gas from the CVD method using such organic compounds contains undecomposed organic compounds and their decomposition products, which are harmful components such as carbon monoxide, ethyl alcohol, acetaldehyde, diethyl ether, and acetone. Of these, except carbon monoxide, zeolites with an average pore size of less than 9Å can be relatively easily adsorbed, but harmful components such as SiF 4 and F 2 contained in the fluorine cleaning exhaust gas have a molecular sieve with an average pore size of 9Å. However, if the average pore size becomes smaller, the adsorption effect will not be obtained and the detrimental effect will be poor, and molecular sieves with a pore size of 5Å or less will have extremely poor adsorption power.
【0013】他方、平均孔径9Åのモレキュラーシーブ
は一酸化炭素以外は比較的容易に吸着できるが、アルコ
ールとアルデヒドは一般にその含有量が多いので、他の
成分の吸着が引続いて行われている段階でも少しずつリ
ークして来る。そこでモレキュラーシーブ吸着層の後段
に酸化触媒層を設け、モレキュラーシーブ吸着層で除去
しにくい一酸化炭素と、ごく一部がリークして来るアル
コール及びアルデヒド等を酸素の共存下に水と二酸化炭
素にまで分解するのが好ましい。なお、CVD排ガスに
一酸化炭素が含まれていない場合には、酸化触媒層は必
ずしも設けなくてもよい。On the other hand, molecular sieves having an average pore size of 9 Å can adsorb other than carbon monoxide relatively easily, but alcohols and aldehydes generally have a large content, so that adsorption of other components is continued. Even at the stage, it leaks little by little. Therefore, an oxidation catalyst layer is provided after the molecular sieve adsorption layer to remove carbon monoxide, which is difficult to remove in the molecular sieve adsorption layer, and alcohol and aldehyde, etc., which leaks only partly, into water and carbon dioxide in the presence of oxygen. It is preferable to decompose up to. In addition, when the CVD exhaust gas does not contain carbon monoxide, the oxidation catalyst layer is not necessarily provided.
【0014】酸化触媒としては、貴金属系ないし遷移金
属系のものを使用し得るが、価格及び性能の点からみて
マンガン酸化物系の触媒が好適である。触媒との反応温
度は、排ガス中に共存する水、二酸化炭素、水素、炭化
水素等非毒性成分による妨害を避けるため、少なくとも
120℃以上とするのがよい。ただし、あまり高温にす
ると余分なエネルギーを必要とするだけでなく、毒性の
ない炭化水素まで分解することになりより多くの酸素を
要するので不経済である。また、触媒そのものの耐熱性
の限界もあるので、200℃以上にする必要はない。な
お、触媒の加熱方法としては外部から電気ヒータで加温
する等の一般に行われている方法が採用できる。As the oxidation catalyst, a noble metal-based or transition metal-based catalyst can be used, but a manganese oxide-based catalyst is preferable in terms of cost and performance. The reaction temperature with the catalyst is preferably at least 120 ° C. or higher in order to avoid interference with non-toxic components such as water, carbon dioxide, hydrogen, and hydrocarbons that coexist in the exhaust gas. However, if the temperature is too high, not only extra energy is required, but also nontoxic hydrocarbons are decomposed and more oxygen is required, which is uneconomical. Further, there is a limit to the heat resistance of the catalyst itself, so it is not necessary to raise the temperature to 200 ° C or higher. As a method for heating the catalyst, a generally used method such as heating with an electric heater from the outside can be adopted.
【0015】さらに共存させる酸素の量としては、前段
のモレキュラーシーブ槽からリークするアルコール、ア
ルデヒドの量が少しずつ増加するので、安全をみてCV
D排ガス中に含まれる一酸化炭素、アルコール、アルデ
ヒドの全量を水と二酸化炭素までに完全酸化するのに必
要な量以上に保持すれば良い。酸素源としては、酸素ま
たは空気で良く、触媒槽の上流で導入されればその導入
位置は問わない。なお有機化合物を用いるCVD排ガス
の特徴として、前記有機化合物の外、アルコール、アル
デヒド等の沸点の高い物質を含んでいるので、蒸着終了
後もこれらの成分が少しずつ排出される。従って、蒸着
中あるいは蒸着後のいかんにかかわらず、常時酸素を必
要量以上供給し、かつ触媒温度も常時所定値を保つよう
にしないと完全な無害化はできない。Further, as the amount of oxygen to be coexisted, the amount of alcohol and aldehyde leaking from the previous molecular sieve tank gradually increases.
D The total amount of carbon monoxide, alcohol and aldehyde contained in the exhaust gas may be maintained at an amount equal to or more than the amount required for complete oxidation to water and carbon dioxide. The oxygen source may be oxygen or air, and its introduction position does not matter as long as it is introduced upstream of the catalyst tank. As a characteristic of the CVD exhaust gas using an organic compound, in addition to the organic compound, substances having a high boiling point such as alcohol and aldehyde are contained, so that these components are gradually discharged even after the completion of the vapor deposition. Therefore, irrespective of whether during the vapor deposition or after the vapor deposition, oxygen cannot be completely detoxified unless oxygen is constantly supplied in a required amount or more and the catalyst temperature is always kept at a predetermined value.
【0016】つぎに、本発明の実施例を記載するが、本
発明はこれらの実施例に限定されるものではない。Next, examples of the present invention will be described, but the present invention is not limited to these examples.
【0017】実施例1 4〜8メッシュ、即ち2.36〜4.75mmφの平均孔
径9Åのモレキュラーシーブ50リットルを充填した吸
着槽(350φ×5000h)の後段にマンガン酸化物
系触媒(MnO2 80%、CuO20%)2.5リット
ルを充填した外部加熱式触媒槽(200φ×80h)を
直列に配置し、該触媒槽の中心の温度を150℃に保持
しながら表1に示す組成を有するCVD排ガス及びクリ
ーニング排ガスを交互に40リットル/分の流速で通じ
て除害処理を行った。なお、クリーニング排ガスには酸
素を2%になるように加えた。Example 1 A manganese oxide-based catalyst (MnO 2 80) was placed in the rear stage of an adsorption tank (350 φ × 5000 h) filled with 4 to 8 mesh, that is, 50 liters of molecular sieve having an average pore size of 9Å of 2.36 to 4.75 mmφ. %, CuO20%) 2.5 liters of external heating type catalyst tanks (200φ × 80 h) are arranged in series, and the CVD having the composition shown in Table 1 is performed while maintaining the center temperature of the catalyst tank at 150 ° C. Exhaust gas and cleaning exhaust gas were passed alternately at a flow rate of 40 liters / minute to perform a detoxification treatment. Oxygen was added to the cleaning exhaust gas so as to be 2%.
【0018】[0018]
【表1】 その結果、6915回分のCVD排ガスとクリーニング
排ガスを処理した時点でCOが許容濃度50ppm を超え
た。[Table 1] As a result, CO exceeded the permissible concentration of 50 ppm when 6915 times of the CVD exhaust gas and the cleaning exhaust gas were treated.
【0019】比較例1 平均孔径9Åのモレキュラーシーブの代りにヤシ殻系活
性炭を使用した以外は実施例1と同様にしてCVD排ガ
スとクリーニング排ガスを交互に通じて除害処理を行っ
たところ、3779回分のCVD排ガスとクリーニング
排ガスを処理した時点でCOが許容濃度を超えた。Comparative Example 1 A detoxification treatment was conducted by alternately passing CVD exhaust gas and cleaning exhaust gas in the same manner as in Example 1 except that coconut shell activated carbon was used instead of the molecular sieve having an average pore diameter of 9Å. CO exceeded the permissible concentration when the batch CVD exhaust gas and cleaning exhaust gas were processed.
【0020】[0020]
【発明の効果】本発明によれば、有機化合物を原料とし
て用いるCVD排ガスについて、CVD排ガスのみでな
く、クリーニング排ガスをも併せて除害化処理をするこ
とが出来、しかも長時間処理することができる。According to the present invention, the CVD exhaust gas using an organic compound as a raw material can be detoxified not only with the CVD exhaust gas but also with the cleaning exhaust gas, and can be treated for a long time. it can.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森 洋一 東京都港区港南1丁目6番27号 荏原イン フィルコ株式会社内 (72)発明者 京谷 敬史 東京都港区港南1丁目6番27号 荏原イン フィルコ株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Yoichi Mori 1-6-27 Konan, Minato-ku, Tokyo Ebara in Filco Co., Ltd. (72) Inventor Keishi Keiya 1-6-27 Konan, Minato-ku, Tokyo Within Infilco Corporation
Claims (4)
害処理方法において、該排ガスを平均孔径が9Å以上の
モレキュラーシーブと接触させることを特徴とするCV
D法排ガスの除害方法。1. A method for removing harmful gases from a CVD method using an organic compound, which comprises contacting the exhaust gas with a molecular sieve having an average pore size of 9Å or more.
Method D Exhaust gas removal method.
の共存下に酸化触媒と接触させることを特徴とする請求
項1記載のCVD法排ガスの除害方法。2. The method of claim 1, wherein the molecular sieve is brought into contact with an oxidation catalyst in the presence of oxygen.
触媒と接触させることを特徴とする請求項2記載のCV
D法排ガスの除害方法。3. The CV according to claim 2, wherein the CV is contacted with the oxidation catalyst at a temperature in the range of 120 to 200 ° C.
Method D Exhaust gas removal method.
るCH3 CHO、C2 H5 OH、COを完全に酸化しう
る理論酸素量の合計量以上に常時保持することを特徴と
する請求項2又は請求項3記載のCVD法排ガスの除害
方法。4. The amount of coexisting oxygen is always maintained at a value equal to or more than the total amount of theoretical oxygen capable of completely oxidizing CH 3 CHO, C 2 H 5 OH, and CO coexisting in the exhaust gas. The method for removing exhaust gas from a CVD method according to claim 2 or claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173740A JP2571176B2 (en) | 1992-06-09 | 1992-06-09 | Removal method of CVD exhaust gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173740A JP2571176B2 (en) | 1992-06-09 | 1992-06-09 | Removal method of CVD exhaust gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0647234A true JPH0647234A (en) | 1994-02-22 |
| JP2571176B2 JP2571176B2 (en) | 1997-01-16 |
Family
ID=15966252
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4173740A Expired - Lifetime JP2571176B2 (en) | 1992-06-09 | 1992-06-09 | Removal method of CVD exhaust gas |
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| Country | Link |
|---|---|
| JP (1) | JP2571176B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921519B2 (en) | 2001-01-24 | 2005-07-26 | Ineos Fluor Holdings Limited | Decomposition of fluorine containing compounds |
| JP2009050747A (en) * | 2007-08-23 | 2009-03-12 | Ube Ind Ltd | Processing apparatus and processing method for compound gas containing PFC and CO |
| CN111715024A (en) * | 2020-06-10 | 2020-09-29 | 浙江工业大学 | Adsorptive catalytic materials for air purification of fuel cells and their intelligent design methods |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577253A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Oxidative catalyst |
| JPS5791719A (en) * | 1980-11-26 | 1982-06-08 | Semiconductor Res Found | Adsorbing device for exhaust gas |
| JPS58186416A (en) * | 1982-04-23 | 1983-10-31 | Kimoto Denshi Kogyo Kk | Purification method of gas |
| JPS61153190A (en) * | 1984-12-26 | 1986-07-11 | Kenkichi Murakami | Apparatus for purifying waste water and waste gas |
| JPS62132543A (en) * | 1985-12-03 | 1987-06-15 | Taiyo Sanso Kk | Molecular sieve active carbon and its production and method for separating specific gas from mixed gases using same |
| JPH0214718A (en) * | 1988-03-30 | 1990-01-18 | L'air Liquide | Method of decomposing hydride substance residual gas and catalyst therefor |
| JPH0222365U (en) * | 1988-07-28 | 1990-02-14 |
-
1992
- 1992-06-09 JP JP4173740A patent/JP2571176B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577253A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Oxidative catalyst |
| JPS5791719A (en) * | 1980-11-26 | 1982-06-08 | Semiconductor Res Found | Adsorbing device for exhaust gas |
| JPS58186416A (en) * | 1982-04-23 | 1983-10-31 | Kimoto Denshi Kogyo Kk | Purification method of gas |
| JPS61153190A (en) * | 1984-12-26 | 1986-07-11 | Kenkichi Murakami | Apparatus for purifying waste water and waste gas |
| JPS62132543A (en) * | 1985-12-03 | 1987-06-15 | Taiyo Sanso Kk | Molecular sieve active carbon and its production and method for separating specific gas from mixed gases using same |
| JPH0214718A (en) * | 1988-03-30 | 1990-01-18 | L'air Liquide | Method of decomposing hydride substance residual gas and catalyst therefor |
| JPH0222365U (en) * | 1988-07-28 | 1990-02-14 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921519B2 (en) | 2001-01-24 | 2005-07-26 | Ineos Fluor Holdings Limited | Decomposition of fluorine containing compounds |
| JP2009050747A (en) * | 2007-08-23 | 2009-03-12 | Ube Ind Ltd | Processing apparatus and processing method for compound gas containing PFC and CO |
| CN111715024A (en) * | 2020-06-10 | 2020-09-29 | 浙江工业大学 | Adsorptive catalytic materials for air purification of fuel cells and their intelligent design methods |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2571176B2 (en) | 1997-01-16 |
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