JPH065428Y2 - Solvent metal for liquid phase epitaxial growth - Google Patents
Solvent metal for liquid phase epitaxial growthInfo
- Publication number
- JPH065428Y2 JPH065428Y2 JP8677888U JP8677888U JPH065428Y2 JP H065428 Y2 JPH065428 Y2 JP H065428Y2 JP 8677888 U JP8677888 U JP 8677888U JP 8677888 U JP8677888 U JP 8677888U JP H065428 Y2 JPH065428 Y2 JP H065428Y2
- Authority
- JP
- Japan
- Prior art keywords
- solvent metal
- epitaxial growth
- solute
- liquid phase
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002904 solvent Substances 0.000 title claims description 44
- 239000002184 metal Substances 0.000 title claims description 40
- 229910052751 metal Inorganic materials 0.000 title claims description 40
- 239000007791 liquid phase Substances 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は化合物半導体からなる基板などの液相エピタキ
シャル成長に用いられる溶媒金属の形状の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to improvement of the shape of a solvent metal used for liquid phase epitaxial growth of a substrate made of a compound semiconductor.
エピタキシャル成長とは、結晶基板の表面にその結晶軸
にそって新しい単結晶層を形成させる技術であり、この
方法によれば、成長層内の不純物分布を比較的自由に変
えることができる。このためトランジスタやＩＣの製造
工程では、この方法により、化合物半導体の基板上に抵
抗率やタイプの異なる単結晶薄膜を形成し、このエピタ
キシャル成長層を利用して半導体発光素子などを製作し
ている。Epitaxial growth is a technique for forming a new single crystal layer on the surface of a crystal substrate along its crystal axis, and according to this method, the impurity distribution in the growth layer can be changed relatively freely. Therefore, in the manufacturing process of transistors and ICs, single crystal thin films having different resistivities and types are formed by this method on a substrate of a compound semiconductor, and a semiconductor light emitting device or the like is manufactured by using this epitaxial growth layer.
上記のエピタキシャル成長技術としては、液相エピタキ
シャル成長法、気相エピタキシャル成長法があり、比較
的新しい方式として分子線エピタキシャル成長法があ
る。このうちでスライドボード法による液相エピタキシ
ャル成長法は連続多層エピタキシャル成長が可能である
ため多用されている。The above-mentioned epitaxial growth technique includes a liquid phase epitaxial growth method and a vapor phase epitaxial growth method, and a relatively new method is a molecular beam epitaxial growth method. Among them, the liquid phase epitaxial growth method by the slide board method is widely used because continuous multi-layer epitaxial growth is possible.
この液相エピタキシャル成長法の従来の方法を第２図及
び第３図を参照して説明する。A conventional method of this liquid phase epitaxial growth method will be described with reference to FIGS. 2 and 3.
固定されたボード１上の所定の位置には基板２が装入さ
れる基板ホルダ３が凹状に形成されている。また固定ボ
ード１上には溶媒金属を装入するための溶媒収納孔４が
形成されたスライダ５が摺動自在に装着されている。A substrate holder 3 into which a substrate 2 is loaded is formed in a concave shape at a predetermined position on the fixed board 1. A slider 5 having a solvent storage hole 4 for charging a solvent metal is slidably mounted on the fixed board 1.
このように構成された装置を用い、まず基板２を基板ホ
ルダ３に挿着する。次に溶媒収納孔４内にＩｎ，Ｇａな
どの溶媒金属６を挿入し、この溶媒金属６上にＩｎＰ，
ＧａＡｓなどの溶質７を載置し、水素雰囲気中で所定温
度に加熱してこれらの溶媒金属６及び溶質７を溶解して
成長溶液とする。次にスライダ５をボード１上で移動さ
せ、この成長溶液を前記基板３の表面と接触させて、目
的とする半導体単結晶層をエピタキシャル成長させる。First, the substrate 2 is attached to the substrate holder 3 by using the apparatus configured as described above. Next, a solvent metal 6 such as In or Ga is inserted into the solvent storage hole 4, and InP,
A solute 7 such as GaAs is placed and heated to a predetermined temperature in a hydrogen atmosphere to dissolve the solvent metal 6 and the solute 7 into a growth solution. Next, the slider 5 is moved on the board 1 and the growth solution is brought into contact with the surface of the substrate 3 to epitaxially grow a target semiconductor single crystal layer.
また、この液相エピタキシャル成長法としては、特開昭
５６−９６７９８号公報に記載されたように、溶媒金属
を板状小片に形成してスライダの溶媒収納孔内に装入
し、この溶媒金属上に溶質を載置して加熱するようにし
た提案や、特公昭６０−１９１３７号公報に記載された
ように、スライダの溶媒収納孔内のＧａ溶液上にＧａを
含んで成る板を載置し、この板上にＡｌを載置して加熱
するようにした提案などが公知である。Further, as this liquid phase epitaxial growth method, as described in JP-A-56-96798, a solvent metal is formed into a plate-like small piece and charged into a solvent storage hole of a slider. As described in Japanese Patent Publication No. 60-19137, a method of placing a solute on a plate and placing a plate containing Ga on the Ga solution in the solvent storage hole of the slider is disclosed. A proposal is known in which Al is placed on this plate and heated.
上記のような液相エピタキシャル成長において、重要な
点は溶媒金属中に溶質を均一に拡散、飽和させ均一な成
長溶液を得ることである。In the liquid phase epitaxial growth as described above, an important point is to uniformly diffuse and saturate the solute in the solvent metal to obtain a uniform growth solution.
しかしながら、溶媒金属は通常平行六面体状をしてお
り、従来は溶質を均一に拡散、飽和させ均一な成長溶液
を得るため一定の位置に保つという配慮がなされておら
ず、溶質を溶媒金属上の適当と考えられる任意の位置に
載置して加熱していた。このため振動などにより溶質が
初期の位置から変動することが多く、溶質が拡散、飽和
して均一な成長溶液となるまでの時間にばらつきが発生
するため余分な加熱時間が必要となるばかりでなく、こ
の加熱間に基板が損傷を受けるなどの問題があった。そ
の上、加熱時間を短縮するために加熱温度を上げれば、
同様に基板に悪影響が発生するため、現実には温度を上
げることはできない。However, the solvent metal is usually in the shape of a parallelepiped, and conventionally, no consideration was given to keeping the solute at a certain position in order to uniformly diffuse and saturate the solute to obtain a uniform growth solution. It was placed and heated at any position considered appropriate. For this reason, the solute often changes from the initial position due to vibration, etc., and the time until the solute diffuses and saturates until it becomes a uniform growth solution varies, so not only extra heating time is required. There was a problem that the substrate was damaged during this heating. In addition, if you raise the heating temperature to shorten the heating time,
Similarly, since the substrate is adversely affected, the temperature cannot be raised in reality.
また、前記２件の公報による提案はいずれも均一な成長
溶液を得るために溶媒金属上の溶質の位置を一定にする
という配慮はなされていなかった。Further, neither of the proposals of the above two publications considers the position of the solute on the solvent metal to be constant in order to obtain a uniform growth solution.
本考案は上記事情に鑑みてなされたもので、溶媒金属に
溶質を均一に拡散飽和させ、均一な成長溶液を得ること
ができ、しかもこの成長溶液を得るための時間を短縮
し、かつ加熱時間をほぼ一定とすることのできる液相エ
ピタキシャル成長用溶媒金属を提供することを目的とす
る。The present invention has been made in view of the above circumstances, and it is possible to uniformly diffuse and saturate a solute in a solvent metal to obtain a uniform growth solution, and to shorten the time for obtaining this growth solution and to increase the heating time. It is an object of the present invention to provide a solvent metal for liquid-phase epitaxial growth that can keep the temperature substantially constant.
本考案は上記目的を達成するために、本考案者等が鋭意
検討した結果、添加成分である溶質を常に溶媒金属上の
一定位置に配置することにより加熱によって溶質が拡
散、飽和して確実に均一な成長溶液が得られ、その加熱
時間を一定とすることができ、しかもこの加熱時間は従
来の約半分に短縮することを見出した。In order to achieve the above-mentioned object, the present invention has been earnestly studied by the present inventors, and as a result, by ensuring that the solute, which is an additional component, is always placed at a fixed position on the solvent metal, the solute diffuses and saturates by heating to ensure It was found that a uniform growth solution can be obtained and the heating time can be kept constant, and the heating time can be shortened to about half that of the conventional method.
そして、本考案は上記知見に基いて完成されたものであ
り、固定板上に摺動自在に装着された可動板の溶媒収納
孔に挿入され、溶質とともに加熱溶解されて、前記固定
板上に載置された半導体の表面にエピタキシャル成長を
形成するための液相エピタキシャル成長用溶媒金属にお
いて、該溶媒金属の上面に溶質収容用の複数個の凹部を
点対称に配列して形成したものである。The present invention has been completed based on the above findings, and is inserted into a solvent storage hole of a movable plate slidably mounted on a fixed plate, heated and dissolved together with a solute, and then fixed on the fixed plate. In a solvent metal for liquid phase epitaxial growth for forming epitaxial growth on the surface of a mounted semiconductor, a plurality of solute-containing recesses are arranged point symmetrically on the upper surface of the solvent metal.
上記の構成によると、溶質は溶媒金属の上面に形成され
た複数個の凹部にそれぞれ位置決め収容されているの
で、加熱の際の振動などによって溶質の位置が変動する
ことはない。その上これらの凹部は点対称に配列されて
いるので、加熱によって溶質が均一に加熱溶融し、拡
散、飽和して均一な成長溶液を一定の加熱時間で得るこ
とができ、かつその加熱時間も短縮することができる。According to the above configuration, the solute is positioned and stored in each of the plurality of recesses formed on the upper surface of the solvent metal, so that the position of the solute does not change due to vibration during heating. Moreover, since these recesses are arranged in point symmetry, the solute can be heated and melted uniformly by heating, diffused and saturated to obtain a uniform growth solution in a constant heating time, and the heating time can also be increased. It can be shortened.
以下、本考案に係る液相エピタキシャル成長用溶媒金属
の一実施例を図面を参照して説明する。An embodiment of a solvent metal for liquid phase epitaxial growth according to the present invention will be described below with reference to the drawings.
第１図に本考案の一実施例を示す。本実施例において溶
媒金属６はＩｎ，Ｇａ，Ｔｅなどの金属で（ａ），
（ｂ）に示すような立方体状、または（ｃ）に示すよう
に底面が曲面に形成されている。この溶媒金属６の上面
には第１図（ａ），（ｂ），（ｃ）にそれぞれ示すよう
に、３個または５個もしくは４個の凹部８が形成されて
いる。これらの凹部８はそれぞれ溶媒金属６の中心には
対して全て点対称に配列されており、その個数は特に限
定されないが２個乃至５個が好ましい。FIG. 1 shows an embodiment of the present invention. In this embodiment, the solvent metal 6 is a metal such as In, Ga, Te (a),
It has a cubic shape as shown in (b) or a curved bottom surface as shown in (c). As shown in FIGS. 1 (a), (b), and (c), three or five or four recesses 8 are formed on the upper surface of the solvent metal 6. These recesses 8 are all arranged point-symmetrically with respect to the center of the solvent metal 6, and the number thereof is not particularly limited, but 2 to 5 are preferable.
一方、前記凹部８の形状は溶質７を収容できれば特に限
定されず、例えば円形、多角形などに形成されている。
また、その直径は２mm以上、深さが０．３mm以上に形成
されており、好ましくは直径５mm以上、深さ５mm以上と
するのが適当であるが、これらの値は凹部８の個数及び
溶質７の添加割合などによって適宜選択すればよい。On the other hand, the shape of the concave portion 8 is not particularly limited as long as it can accommodate the solute 7, and is formed in, for example, a circular shape or a polygonal shape.
The diameter is 2 mm or more and the depth is 0.3 mm or more, and it is suitable that the diameter is 5 mm or more and the depth is 5 mm or more. These values are the number of recesses 8 and the solute. It may be appropriately selected depending on the addition ratio of 7 and the like.
次に、前記溶媒金属６に凹部８を形成する手段について
説明する。これらの凹部８の形成は溶媒金属６を所定の
形状に鋳造した後に切削、プレス等の機械加工によって
行なうこともできるが、これらの溶媒金属６は６Ｎ（９
９．９９９９％）以上、または７Ｎ以上の非常に純度が
高いものが用いられるため不純物の混入という面からは
あまり好ましくない。Next, a means for forming the concave portion 8 in the solvent metal 6 will be described. The recesses 8 can be formed by casting the solvent metal 6 into a predetermined shape and then performing machining such as cutting and pressing.
9.9999%) or more, or 7N or more having a very high purity is used, which is not so preferable from the viewpoint of contamination with impurities.
そのため鋳造時の金型に凸部または突起部などを設け
て、溶媒金属６の表面に凹部８を形成する方法が再現性
等の面から考えても好ましい。この場合に用いる金型材
料としては、高純度カーボン、石英、テフロン、窒化ボ
ロン及びこれらを被覆したものなどが考えられるが、こ
の金型材料の選定は溶媒金属６の融点及び金型材料の加
工性などを考慮して行なえばよい。Therefore, from the viewpoint of reproducibility and the like, it is preferable to provide the metal mold at the time of casting with projections or projections to form the recesses 8 on the surface of the solvent metal 6. The mold material used in this case may be high-purity carbon, quartz, Teflon, boron nitride, or those coated with these. The selection of this mold material is the melting point of the solvent metal 6 and the processing of the mold material. It may be done in consideration of sex and the like.
次に、本実施例によるれば、溶媒金属６を用いて、基板
２上に液相エピタキシャル成長を行なった実験結果につ
いて説明する。Next, according to the present embodiment, the experimental results of performing liquid phase epitaxial growth on the substrate 2 using the solvent metal 6 will be described.
錫をドープした高純度ＩｎＰ基板２を使用し、溶媒金属
６として純度７ＮのＩｎ２０ｇｒ、溶質７として高純度
ＩｎＰ４００mgをそれぞれ用いて、水素ガス気流中で６
５０℃で加熱して溶融し、成長溶液を形成した。この実
験は溶媒金属６に凹部８が形成されていないもの、第１
図（ａ）に示すように３個の凹部８が形成されたもの、
第１図（ｂ）に示すように５個の凹部８が形成されたも
のの３種類の溶媒金属６について、溶媒金属６のＩｎ中
に溶質７のＩｎＰが拡散、飽和するまでの加熱時間を測
定して行なった。A high-purity InP substrate 2 doped with tin is used, In20gr of 7N in purity is used as a solvent metal 6, and 400 mg of high-purity InP is used as a solute 7, respectively, and is used in a hydrogen gas stream.
It was heated at 50 ° C. and melted to form a growth solution. In this experiment, the solvent metal 6 has no recess 8 formed therein, the first
One in which three recesses 8 are formed as shown in FIG.
As shown in FIG. 1 (b), the heating time until the InP of the solute 7 is diffused and saturated in the In of the solvent metal 6 is measured for the three types of solvent metal 6 in which five recesses 8 are formed. I did it.
なお、この場合のＩｎＰの飽和時間は、所定時間毎に基
板２に溶融した成長溶液を接触させて、ＩｎＰをエピタ
キシャル成長させ、生成した ＩｎＰエピタキシャル膜中に基板２にドープした Ｓｎが検出されなくなった時間とした。In this case, the saturation time of InP was such that the growth solution melted was brought into contact with the substrate 2 every predetermined time to cause InP to grow epitaxially, and Sn doped in the substrate 2 was not detected in the generated InP epitaxial film. It was time.
この結果を下記の第１表に示す。The results are shown in Table 1 below.
ただし、Ｎｏ．１は溶質７を溶媒金属６のほぼ中心部に
載置したもの、Ｎｏ．２は、中心部に凹部８を１個形成
し溶質６をいれたもの、Ｎｏ．３，Ｎｏ．４はそれぞれ
溶質６をほぼ３等分、５等分して凹部８にいれたもので
ある。 However, No. No. 1 is the one in which the solute 7 is placed almost in the center of the solvent metal 6, No. 1 No. 2 is one in which one concave portion 8 is formed in the central portion and solute 6 is added, No. 3, No. Reference numeral 4 denotes a solute 6 which is divided into approximately 3 equal parts and 5 parts which are placed in the concave portion 8.
上記第１表から判るように、溶媒金属６の形状により飽
和所要時間は大幅に短縮し、第１図の（ａ），（ｂ）に
示す形状のＮｏ．３及びＮｏ．４の場合は凹部８が形成
されていないＮｏ．１の場合に比較して、所要時間が約
半分となっている。As can be seen from Table 1 above, the time required for saturation was significantly shortened due to the shape of the solvent metal 6, and the No. 1 having the shape shown in FIGS. 3 and No. In the case of No. 4, No. 8 in which the concave portion 8 is not formed. Compared to the case of 1, the required time is about half.
なお、凹部１個を中心部に形成したものでは、凹部を形
成せずに上に載置したものとほぼ同等で効果は無かっ
た。It should be noted that the case where one concave portion is formed in the central portion is almost equivalent to the case where the concave portion is placed on the center without forming the concave portion, and there is no effect.
本実験によれば、溶媒金属６に形成された凹部８が、中
心に対して点対称の位置に設けてあるので、溶質７の溶
媒金属６に対する拡散速度が均一となり、加熱時間が一
定化され、かつ短縮されることを示している。According to this experiment, since the recessed portion 8 formed in the solvent metal 6 is provided at a position symmetrical with respect to the center, the diffusion rate of the solute 7 with respect to the solvent metal 6 becomes uniform, and the heating time becomes constant. , And is shortened.
以上説明したように本考案によれば、溶融金属の上面に
複数個の凹部を点対称に形成して、これらの凹部にそれ
ぞれ溶質を分散して収容するようにしので、溶媒金属に
溶質を拡散飽和させ、均一な成長溶液を得るための加熱
時間がほぼ一定となり、また従来の加熱時間の約半分に
短縮することができる。この結果、コストの低減ととも
に信頼性の高いエピタキシャル成長膜を得ることが可能
となった。As described above, according to the present invention, a plurality of recesses are formed point-symmetrically on the upper surface of the molten metal, and solutes are dispersed and accommodated in these recesses, respectively. The heating time for saturating and obtaining a uniform growth solution is almost constant, and can be shortened to about half of the conventional heating time. As a result, it has become possible to reduce the cost and obtain a highly reliable epitaxial growth film.
第１図は本考案に係る液相エピタキシャル成長用溶媒金
属の実施例を示す斜視図、第２図はスライドボード法に
よる液相エピタキシャル成長法に用いる装置の概略を示
す平面図、第３図は第２図の縦断面である。 １……ボード（固定板）、 ２……基板（半導体）、 ４……溶媒収納孔、 ５……スライダ（可動板）、 ６……溶媒金属、 ７……溶質、 ８……凹部。FIG. 1 is a perspective view showing an embodiment of a solvent metal for liquid phase epitaxial growth according to the present invention, FIG. 2 is a plan view showing an outline of an apparatus used for a liquid phase epitaxial growth method by a slide board method, and FIG. It is a longitudinal section of a figure. 1 ... Board (fixed plate), 2 ... Substrate (semiconductor), 4 ... Solvent storage hole, 5 ... Slider (movable plate), 6 ... Solvent metal, 7 ... Solute, 8 ... Recessed portion.
Claims (1)
溶媒収納孔に挿入され、溶質とともに加熱溶解されて、
前記固定板上に載置された半導体の表面にエピタキシャ
ル成長を形成するための液相エピタキシャル成長用溶媒
金属において、該溶媒金属の上面に溶質収容用の複数個
の凹部を点対称に配列して形成したことを特徴とする液
相エピタキシャル成長用溶媒金属。1. A movable plate, which is slidably mounted on a fixed plate, is inserted into a solvent storage hole and is heated and dissolved together with a solute.
In a solvent metal for liquid phase epitaxial growth for forming epitaxial growth on the surface of a semiconductor placed on the fixed plate, a plurality of solute-containing recesses are formed in point symmetry on the upper surface of the solvent metal. A solvent metal for liquid phase epitaxial growth characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0211167U JPH0211167U (en) | 1990-01-24 |
| JPH065428Y2 true JPH065428Y2 (en) | 1994-02-09 |
Family
ID=31311419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8677888U Expired - Lifetime JPH065428Y2 (en) | 1988-06-30 | 1988-06-30 | Solvent metal for liquid phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065428Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142603U (en) * | 1975-05-12 | 1976-11-17 |
-
1988
- 1988-06-30 JP JP8677888U patent/JPH065428Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0211167U (en) | 1990-01-24 |
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