JPH065730A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JPH065730A JPH065730A JP4181713A JP18171392A JPH065730A JP H065730 A JPH065730 A JP H065730A JP 4181713 A JP4181713 A JP 4181713A JP 18171392 A JP18171392 A JP 18171392A JP H065730 A JPH065730 A JP H065730A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- circuit
- circuit board
- conductor pattern
- base member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
(57)【要約】
【目的】 放熱特性に優れ、かつ、絶縁耐圧の高い絶縁
層を有する回路基板を提供する。
【構成】 高電流制御用のパワー回路と、このパワー回
路を制御する制御回路と、を搭載する回路基板である。
ベース部材１１上にＡｌＮの絶縁層１２を積層し、この
絶縁層１２上にパワー回路用の導体パターン１３を形成
する。この絶縁層１２の熱伝導率は１０Ｗ／ｍ・Ｋ以上
である。ベース部材１１上に第２の絶縁層１５を積層
し、第２の絶縁層１５上に上記制御回路用の導体パター
ン１６を形成する。第２の絶縁層１５は有機樹脂系材
料、例えばエポキシ樹脂基板、ポリイミド樹脂基板、ガ
ラスエポキシ樹脂基板等で形成する。
(57) [Abstract] [Purpose] To provide a circuit board having an insulating layer having excellent heat dissipation characteristics and high withstand voltage. [Structure] A circuit board on which a power circuit for high current control and a control circuit for controlling the power circuit are mounted.
An insulating layer 12 of AlN is laminated on the base member 11, and a conductor pattern 13 for a power circuit is formed on the insulating layer 12. The thermal conductivity of this insulating layer 12 is 10 W / m · K or more. The second insulating layer 15 is laminated on the base member 11, and the conductor pattern 16 for the control circuit is formed on the second insulating layer 15. The second insulating layer 15 is formed of an organic resin material such as an epoxy resin substrate, a polyimide resin substrate, or a glass epoxy resin substrate.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば制御回路を取り
込んだパワーモジュールの配線板、小型の電源ユニット
の配線板等に使用される回路基板、詳しくはパワー回路
を搭載したハイブリッドＩＣ用基板等に用いられ、高放
熱特性および高絶縁耐圧を有する回路基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board used in, for example, a wiring board of a power module incorporating a control circuit, a wiring board of a small-sized power supply unit, or the like, and more specifically, a hybrid IC board mounting a power circuit. The present invention relates to a circuit board having high heat dissipation characteristics and high withstand voltage.
【０００２】[0002]
【従来の技術】コンピュータの性能向上は、半導体集積
回路の集積度の飛躍的な発展に負うところが大きい。一
方では、これらの半導体集積回路の性能向上に見合った
実装技術の進展も大きく寄与している。それに伴い、１
ゲートあたりの消費電力は低減の方向にある。しかし、
それ以上に素子の高速化と高集積化により発熱密度は増
加の傾向にある。特に、中出力以上のハイブリッドＩＣ
においては内部損失による発熱とその熱の放出が必要で
ある。殊に、小型化を意図する場合には、熱の放出が悪
くなるので、構造設計上の考慮が十分に成されなければ
ならない。2. Description of the Related Art Improving the performance of computers largely depends on the rapid development of the degree of integration of semiconductor integrated circuits. On the other hand, the progress of packaging technology corresponding to the improvement of the performance of these semiconductor integrated circuits has also contributed greatly. Along with that, 1
The power consumption per gate is in the direction of reduction. But,
Heat generation density tends to increase due to higher speed and higher integration of devices. Especially, hybrid IC with medium output or more
In, it is necessary to generate heat due to internal loss and to release the heat. In particular, when miniaturization is intended, heat emission is deteriorated, so that sufficient consideration must be given to structural design.
【０００３】一方、電算機や伝送装置も機能として高速
性を追求する観点から、熱放散を十分に考慮しなければ
ならない。この熱抵抗を低減しなければいけないという
要請は、高電流制御用のパワー回路と、このパワー回路
を制御する制御回路を搭載した回路基板でも同様であ
る。従来の多層回路基板としては、例えば図３に示すよ
うなものがある。このものはアルミベース部分２層配線
板であって、パワー素子搭載用の高放熱１層回路および
制御回路用のスルーホール付高密度２層回路を同一基板
上に形成している。すなわち、アルミニウム板３１上に
高放熱性絶縁層としてポリイミド樹脂３２を積層してい
る。このポリイミド系樹脂の絶縁層３２上には、パワー
回路用の導体パターン３３と、２層構造の制御回路用の
導体パターン３４とが配設されている。３５はＮｉメッ
キ層、３６はソルダレジスト層である。On the other hand, from the viewpoint of pursuing high speed as a function of a computer and a transmission device, it is necessary to sufficiently consider heat dissipation. The demand for reducing the thermal resistance is the same for the power circuit for high current control and the circuit board on which the control circuit for controlling the power circuit is mounted. As a conventional multilayer circuit board, for example, there is one as shown in FIG. This is an aluminum base two-layer wiring board, in which a high heat dissipation single layer circuit for mounting a power element and a high density two layer circuit with through holes for a control circuit are formed on the same substrate. That is, the polyimide resin 32 is laminated on the aluminum plate 31 as a high heat dissipation insulating layer. A conductor pattern 33 for the power circuit and a conductor pattern 34 for the control circuit having a two-layer structure are arranged on the insulating layer 32 of the polyimide resin. Reference numeral 35 is a Ni plating layer, and 36 is a solder resist layer.
【０００４】[0004]
【発明が解決しようとする問題点】しかしながら、この
ような従来の回路基板においては、絶縁層３２としてポ
リイミド系樹脂を用いているため、その熱伝導率が０．
１〜０．５Ｗ／ｍ・Ｋと小さく、未だその放熱特性が不
十分である。そのため、絶縁層３２の層厚を１００μｍ
程度と薄くせざるを得ない。層厚が薄くなると、これら
の樹脂が本来有している高い絶縁耐圧が低減し、絶縁破
壊が起きてしまう。したがって、放熱性と絶縁耐圧とを
両立することができず、両者の関係を示すパラメータで
ある（熱伝導率）×（絶縁耐圧）値が不十分となるとい
う課題があった。However, in such a conventional circuit board, since the polyimide-based resin is used as the insulating layer 32, the thermal conductivity thereof is less than 0.
It is as small as 1 to 0.5 W / m · K, and its heat dissipation characteristics are still insufficient. Therefore, the layer thickness of the insulating layer 32 is 100 μm.
There is no choice but to thin it. When the layer thickness is reduced, the high withstand voltage originally possessed by these resins is reduced and dielectric breakdown occurs. Therefore, there is a problem that both heat dissipation and dielectric strength cannot be achieved, and the value of (thermal conductivity) × (dielectric strength), which is a parameter indicating the relationship between them, becomes insufficient.
【０００５】[0005]
【発明の目的】本発明の主たる目的は、このような問題
点を解決して、放熱特性に優れ、かつ、絶縁耐圧の高い
絶縁層を有する回路基板を提供することにある。SUMMARY OF THE INVENTION It is a main object of the present invention to solve the above problems and provide a circuit board having an insulating layer having excellent heat dissipation characteristics and high withstand voltage.
【０００６】[0006]
【問題点を解決するための手段】本発明は、大電力制御
用のパワー回路と、このパワー回路を制御する制御回路
と、を搭載する回路基板において、ベース部材と、この
ベース部材上に積層されるセラミックスの絶縁層と、こ
の絶縁層上に形成された上記パワー回路用の導体パター
ンと、を備えるとともに、上記絶縁層の熱伝導率が１０
Ｗ／ｍ・Ｋ以上である回路基板である。SUMMARY OF THE INVENTION The present invention is a circuit board on which a power circuit for high power control and a control circuit for controlling the power circuit are mounted, and a base member and a laminate on the base member. And a conductor pattern for the power circuit formed on the insulating layer, and the thermal conductivity of the insulating layer is 10 or less.
A circuit board having a W / m · K or higher.
【０００７】また、上記ベース部材上に第２の絶縁層を
積層し、この第２の絶縁層上に上記制御回路用の導体パ
ターンを形成するとともに、この第２の絶縁層を有機樹
脂系材料で形成した回路基板である。A second insulating layer is laminated on the base member, a conductor pattern for the control circuit is formed on the second insulating layer, and the second insulating layer is formed of an organic resin material. It is a circuit board formed in.
【０００８】[0008]
【作用】本発明においては、絶縁層の材質としてＡｌ
Ｎ、Ａｌ2Ｏ3あるいはＳｉＣ等のセラミックスを用い
る。これらのセラミックスは、熱伝導率が１０〜３００
Ｗ／ｍ・Ｋであり、絶縁耐圧が１〜２０ｋＶ／ｍｍであ
る。このため、（放熱量）×（絶縁耐圧）値が１００〜
２５００Ｗ・ｋＶ／ｍ・Ｋ・ｍｍと高く、従来に比較し
て大幅に放熱特性が改善される。In the present invention, the material of the insulating layer is Al
Ceramics such as N, Al 2 O 3 or SiC is used. These ceramics have a thermal conductivity of 10 to 300.
W / m · K, and withstand voltage is 1 to 20 kV / mm. Therefore, the value of (heat dissipation amount) x (dielectric breakdown voltage) is 100 to
It is as high as 2500 W · kV / m · K · mm, and the heat dissipation characteristics are greatly improved compared to the conventional one.
【０００９】また、本発明においては、ベース部材上に
第２の絶縁層を積層し、この第２の絶縁層の上に制御回
路用の導体パターンを形成している。この第２の絶縁層
として有機樹脂系材料を用いている。この有機樹脂系材
料、例えばガラスエポキシ樹脂は、上記セラミックスに
比較して安価である。Further, in the present invention, the second insulating layer is laminated on the base member, and the conductor pattern for the control circuit is formed on the second insulating layer. An organic resin material is used as the second insulating layer. This organic resin material, such as glass epoxy resin, is cheaper than the above ceramics.
【００１０】[0010]
【実施例】以下、本発明の具体的構成を実施例に基づい
て詳述する。図１は、本発明をスイッチング素子あるい
は電源ユニットとして用いられる高電流制御用回路に適
用した一実施例を示している。図１において、１１は放
熱用のアルミニウム板からなるベース部材であって、そ
の上面には所定厚さの窒化アルミニウム層（ＡｌＮ層）
で構成される絶縁層１２が例えばＡｌ−Ｓｉ系のろう材
を用いて積層、形成されている。この絶縁層１２の上面
には、パワー回路を構成するアルミニウム製の導体パタ
ーン１３が被着、形成されている。この導体パターン１
３の上面にはニッケルメッキ１４が施されており、図示
していないが、はんだ付けによりこの上にパワーＩＣチ
ップが搭載されるものである。EXAMPLES The specific constitution of the present invention will be described in detail below based on examples. FIG. 1 shows an embodiment in which the present invention is applied to a high current control circuit used as a switching element or a power supply unit. In FIG. 1, 11 is a base member made of an aluminum plate for heat dissipation, and an aluminum nitride layer (AlN layer) of a predetermined thickness is formed on the upper surface of the base member.
The insulating layer 12 composed of is laminated and formed using, for example, an Al—Si based brazing material. On the upper surface of this insulating layer 12, a conductor pattern 13 made of aluminum that constitutes a power circuit is adhered and formed. This conductor pattern 1
Nickel plating 14 is applied to the upper surface of 3, and a power IC chip is mounted thereon by soldering, although not shown.
【００１１】また、上記絶縁層１２上の一端側には第２
の絶縁層である低温焼成基板１５が積層されている。こ
の低温焼成基板１５の上面には金属箔または厚膜回路等
からなる制御回路用の導体パターン１６が被着、形成さ
れている。そして、この導体パターン１６の上に図示し
ていないが制御回路用のＩＣチップ、素子が搭載される
ものである。なお、上記第２の絶縁層１５としてはアル
ミナ基板を採用することもでき、さらには、有機樹脂系
材料の基板、例えばエポキシ基板、ガラスエポキシ基
板、ポリイミド系基板等を使用することもできる。A second layer is formed on the insulating layer 12 at one end thereof.
The low temperature fired substrate 15 which is an insulating layer is laminated. On the upper surface of the low temperature fired substrate 15, a conductor pattern 16 for a control circuit, which is made of a metal foil or a thick film circuit, is adhered and formed. Although not shown, an IC chip or element for a control circuit is mounted on the conductor pattern 16. An alumina substrate may be used as the second insulating layer 15, and further, a substrate made of an organic resin material such as an epoxy substrate, a glass epoxy substrate, or a polyimide substrate may be used.
【００１２】この実施例にあっては、放熱用のアルミニ
ウム板１１と導体パターン１３との間にセラミックス製
（ＡｌＮ）の絶縁層１２を介在させている。このため、
パワー回路からの発熱はこの絶縁層１２を介して効率よ
くアルミニウム板１１に伝達されることとなり、パワー
ＩＣチップ等の機能を十分に発揮することができる。ま
た、パワー回路の耐久性が増している。In this embodiment, an insulating layer 12 made of ceramics (AlN) is interposed between the aluminum plate 11 for heat dissipation and the conductor pattern 13. For this reason,
The heat generated from the power circuit is efficiently transmitted to the aluminum plate 11 via the insulating layer 12, and the function of the power IC chip or the like can be sufficiently exhibited. Also, the durability of the power circuit is increasing.
【００１３】この場合、絶縁層１２に用いるセラミック
スとしては、上記のように熱伝導率が１００Ｗ／ｍ・
Ｋ、絶縁耐圧が１４〜１７ｋＶ／ｍｍであるＡｌＮが好
適であるが、その他にも、Ａｌ2Ｏ3、ＳｉＣ、ＢｅＯ、
および、ＢａＳｎ（ＢＯ3）2等も用いることができる。
但し、Ａｌ2Ｏ3やＢａＳｎ（ＢＯ3）2は熱伝導率が低
く、ＳｉＣは誘電率が高く、ＢｅＯは毒性が強いので、
好ましくはＡｌＮを用いるべきである。表１に本発明に
おいて使用し得る各種セラミックスの物性値を示す。In this case, the ceramic used for the insulating layer 12 has a thermal conductivity of 100 W / m.multidot.m as described above.
K, AlN having a withstand voltage of 14 to 17 kV / mm is preferable, but Al 2 O 3 , SiC, BeO,
Also, BaSn (BO 3 ) 2 or the like can be used.
However, Al 2 O 3 and BaSn (BO 3 ) 2 have low thermal conductivity, SiC has a high dielectric constant, and BeO has a strong toxicity.
AlN should preferably be used. Table 1 shows the physical property values of various ceramics that can be used in the present invention.
【００１４】[0014]
【表１】[Table 1]
【００１５】この絶縁層１２の材質を選定する場合に
は、放熱特性と絶縁性を兼ね備えたものが好ましく、こ
の両者の相関を示す指標である（熱伝導率）×（絶縁耐
圧）の値が重要である。ＡｌＮは１４００〜１７００で
あり、両者のバランスがよいので好適である。この絶縁
層１２の層厚は０．３〜１．０ｍｍ程度とするのが好ま
しい。層厚がこの範囲を越えると放熱特性が劣化し、こ
の範囲未満であると絶縁破壊を生じることがある。な
お、この絶縁層１２は放熱用のアルミニウム板１１上に
積層しているが、この放熱板としてはアルミニウム以外
にも、鉄、銅等も用い得る。When the material of the insulating layer 12 is selected, it is preferable that the material has both heat dissipation characteristics and insulating properties, and the value of (heat conductivity) × (dielectric strength) which is an index showing the correlation between the two is preferable. is important. AlN is 1400 to 1700, which is preferable because it has a good balance between the two. The insulating layer 12 preferably has a layer thickness of about 0.3 to 1.0 mm. If the layer thickness exceeds this range, the heat dissipation characteristics deteriorate, and if it is less than this range, dielectric breakdown may occur. The insulating layer 12 is laminated on the aluminum plate 11 for heat radiation, but iron, copper or the like may be used as the heat radiation plate in addition to aluminum.
【００１６】図２は本発明の他の実施例に係る高電流用
制御回路を示す断面図である。この図に示すように、こ
の実施例では、アルミニウムのベース２１上にＡｌＮの
絶縁層２２を積層し、この絶縁層２２の上に、パワー回
路用の導体パターン２３と、制御回路用の導体パターン
２４と、をそれぞれ形成したものである。この導体パタ
ーン２４は有機樹脂基板またはガラスエポキシ樹脂基板
２５に２層に形成されており、この基板２５が第２の絶
縁層となる。この第２の絶縁層２５は上述したアルミナ
または低温焼成基板を用いてもよい。樹脂を用いれば誘
電率が低いので応答時間が速くなり好適である。用い得
る樹脂としては、表１に示すように、誘電率が５以下で
あり、熱伝導率が１Ｗ／ｍ・Ｋであるエポキシ樹脂、ポ
リイミド系樹脂、ポリイミドフィルムおよびガラスエポ
キシ樹脂等が挙げられる。この第２の絶縁層２５は、熱
的な遮蔽板としても機能し、これに搭載される導体パタ
ーン２４および制御用のＩＣチップが高温に曝されるの
を防ぐことができる。第２の絶縁層２５は、例えばその
熱伝導率が０．３Ｗ／ｍ・Ｋ、誘電率が４．８である。FIG. 2 is a sectional view showing a high current control circuit according to another embodiment of the present invention. As shown in this figure, in this embodiment, an AlN insulating layer 22 is laminated on an aluminum base 21, and a conductive pattern 23 for a power circuit and a conductive pattern for a control circuit are formed on the insulating layer 22. 24 and 24 are respectively formed. This conductor pattern 24 is formed in two layers on an organic resin substrate or a glass epoxy resin substrate 25, and this substrate 25 serves as a second insulating layer. The second insulating layer 25 may use the above-mentioned alumina or low temperature firing substrate. If a resin is used, the dielectric constant is low and the response time is short, which is preferable. Examples of resins that can be used include epoxy resins having a dielectric constant of 5 or less and a thermal conductivity of 1 W / m · K, a polyimide resin, a polyimide film, and a glass epoxy resin, as shown in Table 1. The second insulating layer 25 also functions as a thermal shield plate, and can prevent the conductor pattern 24 and the control IC chip mounted thereon from being exposed to high temperatures. The second insulating layer 25 has, for example, a thermal conductivity of 0.3 W / m · K and a dielectric constant of 4.8.
【００１７】なお、制御回路用の導体パターンは、上記
絶縁層を除いて直接ベース上に第２の絶縁層を積層、形
成し、この上に形成してもよい。このようにすると、安
価な有機樹脂系の絶縁層により回路基板そのものをより
安価に製作することができる。The conductor pattern for the control circuit may be formed by directly laminating and forming the second insulating layer on the base except the above-mentioned insulating layer, and then forming the second insulating layer on the second insulating layer. By doing so, the circuit board itself can be manufactured at a lower cost by using the inexpensive organic resin insulating layer.
【００１８】[0018]
【発明の効果】本発明の回路基板は、良好な放熱特性、
高い絶縁破壊耐圧特性を有する。The circuit board of the present invention has good heat dissipation characteristics,
It has high breakdown voltage characteristics.
【図１】本発明の一実施例に係る多層回路基板を示す断
面図である。FIG. 1 is a cross-sectional view showing a multilayer circuit board according to an embodiment of the present invention.
【図２】本発明の他の実施例に係る多層回路基板を示す
断面図である。FIG. 2 is a sectional view showing a multilayer circuit board according to another embodiment of the present invention.
【図３】従来の多層回路基板を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional multilayer circuit board.
１１ ベース部材 １２ 絶縁層 １３ パワー回路用の導体パターン １５ 第２の絶縁層 １６ 制御回路用の導体パターン 11 Base Member 12 Insulating Layer 13 Conductor Pattern for Power Circuit 15 Second Insulating Layer 16 Conductor Pattern for Control Circuit
Claims (2)
ー回路を制御する制御回路と、を搭載する回路基板にお
いて、 ベース部材と、このベース部材上に積層されるセラミッ
クスの絶縁層と、この絶縁層上に形成された上記パワー
回路用の導体パターンと、を備えるとともに、上記絶縁
層の熱伝導率が１０Ｗ／ｍ・Ｋ以上であることを特徴と
する回路基板。1. A circuit board on which a high-power control power circuit and a control circuit for controlling the power circuit are mounted, a base member, a ceramic insulating layer laminated on the base member, and A circuit board comprising: the conductor pattern for the power circuit formed on an insulating layer; and the insulating layer having a thermal conductivity of 10 W / m · K or more.
し、この第２の絶縁層上に上記制御回路用の導体パター
ンを形成するとともに、この第２の絶縁層を有機樹脂系
材料で形成した請求項１に記載の回路基板。2. A second insulating layer is laminated on the base member, a conductor pattern for the control circuit is formed on the second insulating layer, and the second insulating layer is formed of an organic resin material. The circuit board according to claim 1, which is formed by.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4181713A JP3036236B2 (en) | 1992-06-16 | 1992-06-16 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4181713A JP3036236B2 (en) | 1992-06-16 | 1992-06-16 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH065730A true JPH065730A (en) | 1994-01-14 |
| JP3036236B2 JP3036236B2 (en) | 2000-04-24 |
Family
ID=16105561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4181713A Expired - Lifetime JP3036236B2 (en) | 1992-06-16 | 1992-06-16 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3036236B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0706221A3 (en) * | 1994-10-07 | 1997-11-05 | Hitachi, Ltd. | Semiconductor device comprising a plurality of semiconductor elements |
| CN104994682A (en) * | 2015-07-14 | 2015-10-21 | 广东欧珀移动通信有限公司 | PCB having good heat-dissipation performance and mobile terminal applied therewith |
| US12635518B2 (en) | 2021-05-27 | 2026-05-19 | Denso Corporation | Semiconductor device |
-
1992
- 1992-06-16 JP JP4181713A patent/JP3036236B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0706221A3 (en) * | 1994-10-07 | 1997-11-05 | Hitachi, Ltd. | Semiconductor device comprising a plurality of semiconductor elements |
| US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
| CN104994682A (en) * | 2015-07-14 | 2015-10-21 | 广东欧珀移动通信有限公司 | PCB having good heat-dissipation performance and mobile terminal applied therewith |
| US12635518B2 (en) | 2021-05-27 | 2026-05-19 | Denso Corporation | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3036236B2 (en) | 2000-04-24 |
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