JPH066020A - Terminal joining method - Google Patents
Terminal joining methodInfo
- Publication number
- JPH066020A JPH066020A JP4158235A JP15823592A JPH066020A JP H066020 A JPH066020 A JP H066020A JP 4158235 A JP4158235 A JP 4158235A JP 15823592 A JP15823592 A JP 15823592A JP H066020 A JPH066020 A JP H066020A
- Authority
- JP
- Japan
- Prior art keywords
- terminals
- aid
- layers
- terminal
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3465—Application of solder
Landscapes
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【目的】 本発明は端子接合方法に関し、低圧力、低温
度下において信頼性の高い接合を実現することを目的と
する。
【構成】 端子１１，１２にＳｎ−Ｐｂ層１４，１５を
形成し、これを間に液相のＧａを介して突き合せ、８０
℃に加熱する。液相のＧａが、Ｓｎ−Ｐｂ層１４，１５
の表面の酸化膜１７，１８内に拡散し、更にＳｎ−Ｐｂ
層１４，１５内に拡散し、Ｓｎ−Ｐｂ−Ｇａ共晶合金製
の接合部３２を形成するよう構成する。
(57) [Summary] [Object] The present invention relates to a terminal joining method, and an object thereof is to realize highly reliable joining under low pressure and low temperature. [Structure] Sn-Pb layers 14 and 15 are formed on terminals 11 and 12, and they are abutted with liquid-phase Ga interposed therebetween.
Heat to ℃. The liquid Ga is Sn-Pb layers 14 and 15
Diffuses into the oxide films 17 and 18 on the surface of the
It is configured to diffuse into the layers 14 and 15 to form a joint 32 made of Sn-Pb-Ga eutectic alloy.
Description
【０００１】[0001]
【産業上の利用分野】本発明は端子接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a terminal joining method.
【０００２】半導体装置の基板上への実装は、半導体装
置の端子を基板上の端子に接合することにより行われ
る。The mounting of the semiconductor device on the substrate is performed by joining the terminals of the semiconductor device to the terminals on the substrate.
【０００３】この端子同士の場合は、信頼性良くしかも
簡便に行われることが望ましい。When the terminals are connected to each other, it is desirable that the terminals be reliable and simple.
【０００４】[0004]
【従来の技術】従来の接合は、フラックスを利用して行
っており、具体的には図３に示す工程１〜５を経て行っ
ていた。2. Description of the Related Art Conventional bonding is carried out by using a flux, specifically, steps 1 to 5 shown in FIG.
【０００５】まず、Ｓｎ−Ｐｂ層形成工程１を行う。First, a Sn-Pb layer forming step 1 is performed.
【０００６】図４（Ａ）は、この工程１後の状態を示
す。FIG. 4A shows a state after this step 1.
【０００７】同図中、１０はＬＳＩ、１１はその端子
（Ｎｉ４２％）である。In the figure, 10 is an LSI, and 11 is its terminal (Ni 42%).
【０００８】１２は基板、１３は基板１２上の端子であ
る。Reference numeral 12 is a substrate, and 13 is a terminal on the substrate 12.
【０００９】１４，１５はＳｎ−Ｐｂ層であり、夫々蒸
着又はめっきによって、端子１１，１３を覆って形成さ
れる。Reference numerals 14 and 15 are Sn-Pb layers, which are formed by vapor deposition or plating to cover the terminals 11 and 13, respectively.
【００１０】次に、フラックス供給工程２を行い、フラ
ックス１６を、図４（Ｂ）に示すように、例えばＳｎ−
Ｐｂ層１５上に付着させる。Next, a flux supplying step 2 is carried out so that the flux 16 is, for example, Sn-- as shown in FIG. 4 (B).
It is attached on the Pb layer 15.
【００１１】次に、突き合わせ加圧工程３を行い、図４
（Ｃ）に示すように、Ｓｎ−Ｐｂ層１４，１５を突き合
わせて一対の端子当り数１００ｇの圧力Ｐ1 で加圧す
る。Next, a butt pressurizing step 3 is performed, and as shown in FIG.
As shown in (C), the Sn-Pb layers 14 and 15 are abutted against each other and pressed with a pressure P 1 of several 100 g per pair of terminals.
【００１２】次に、加熱工程４を行い、パープルオロカ
ーボン雰囲気中で、約３００℃に加熱する。Next, heating step 4 is carried out to heat to about 300 ° C. in a purple orocarbon atmosphere.
【００１３】これにより、フラックスが活性化され、活
性化したフラックスによって、Ｓｎ−Ｐｂ層１４，１５
の表面の酸化膜１７，１８が化学的に取り除かれる。As a result, the flux is activated, and the Sn-Pb layers 14 and 15 are activated by the activated flux.
The oxide films 17 and 18 on the surface of the are removed chemically.
【００１４】また、酸化膜１７，１８が取り除かれて現
われたＳｎ−Ｐｂが融解して、図４（Ｄ）に示すように
Ｓｎ−Ｐｂ層１４，１５が接合し、端子１１，１３が接
合される。Further, the Sn-Pb exposed by removing the oxide films 17 and 18 is melted and the Sn-Pb layers 14 and 15 are joined and the terminals 11 and 13 are joined as shown in FIG. 4D. To be done.
【００１５】最後に、洗浄工程５を行い、残っているフ
ラックス１６ａを除去する。Finally, a cleaning step 5 is performed to remove the remaining flux 16a.
【００１６】要約すると、従来の接合方法は、酸化膜１
６，１７を取り除き、酸化膜１６，１７を取り除くこと
によって表われたＳｎ−Ｐｂ同士を融解して接合するも
のである。In summary, the conventional bonding method uses the oxide film 1
6 and 17 are removed and the oxide films 16 and 17 are removed, and Sn-Pb represented by melting is joined.
【００１７】接合部１９はＳｎ−Ｐｂである。The joint portion 19 is Sn-Pb.
【００１８】[0018]
【発明が解決しようとする課題】酸化膜１７，１８を取
り除くために、フラックスを使用し、且つ高温に加熱し
ており、更にはフラックスの洗浄も必要となり、作業に
手間がかかっていた。In order to remove the oxide films 17 and 18, flux is used and heated to a high temperature, and further cleaning of the flux is required, which is troublesome for the work.
【００１９】また、実際上は酸化膜１７，１８の除去が
困難となる場合もあり、この場合には、接合した場所の
電気的接続の特性が良好でなくなってしまう虞れもあっ
た。そこで、本発明は、酸化膜を透過して拡散しうる低
融点の接合助剤を使用することによって、酸化膜を取り
除かずに接合を可能とした端子接合方法を提供すること
を目的とする。In some cases, it may be difficult to remove the oxide films 17 and 18 in practice, and in this case, there is a possibility that the electrical connection characteristics at the bonding location may not be good. Therefore, an object of the present invention is to provide a terminal bonding method that enables bonding without removing the oxide film by using a bonding agent having a low melting point that can penetrate and diffuse through the oxide film.
【００２０】[0020]
【課題を解決するための手段】請求項１の発明は、接合
すべき端子上に、低温で他の金属が拡散し易い金属製の
接合体を形成する接合体形成工程と、該形成された接合
体上に、液相温度が室温付近である低融点金属製の接合
助剤を付着させる接合助剤付着工程と、上記端子同士を
突き合わせて加圧し、この状態で加熱し、液相状態の接
合助剤を、上記接合体の表面の酸化膜内に及び上記接合
体内に拡散させる加圧加熱工程とよりなる構成としたも
のである。According to a first aspect of the present invention, there is provided a joined body forming step of forming a joined body made of a metal, in which other metal easily diffuses at a low temperature, on a terminal to be joined, and the formed body. On the bonded body, a bonding aid adhesion step of adhering a bonding aid made of a low-melting metal whose liquidus temperature is around room temperature and the terminals are pressed against each other, heated in this state, and in a liquid phase state. The bonding auxiliary agent is constituted by a pressurizing and heating step of diffusing the bonding aid into the oxide film on the surface of the bonded body and into the bonded body.
【００２１】請求項２の発明は、上記接合体は、Ｓｎ−
Ｐｂ、Ｉｎ又はＩｎ合金であり、上記接合助剤は、Ｇａ
又はＧａ−Ｂｉである構成としたものである。According to a second aspect of the present invention, the above-mentioned joined body is Sn-
Pb, In or In alloy, and the above-mentioned joining aid is Ga
Alternatively, the structure is Ga-Bi.
【００２２】[0022]
【作用】請求項１の低温で他の金属が拡散し易い接合体
及び液相温度が室温付近である低融点金属製の接合助剤
を使用し、接合助剤を液相状態として拡散させること
は、低い温度下で接合作業を可能とし、且つ接合助剤が
接合体表面の酸化膜内にも拡散することを可能として、
酸化膜を取り除くことを不要とするように作用する。According to a first aspect of the present invention, by using a joined body in which other metals easily diffuse at a low temperature and a joining aid made of a low melting point metal having a liquidus temperature near room temperature, the joining aid is diffused in a liquid phase state. Enables the bonding work at a low temperature and allows the bonding aid to diffuse into the oxide film on the surface of the bonded body,
It works so that it is not necessary to remove the oxide film.
【００２３】請求項２の接合体として、Ｓｎ−Ｐｂ、Ｉ
ｎ、又はＩｎ合金を使用し、接合助剤としてＧａ又はＧ
ａ−Ｂｉを使用した構成は、接合を低圧力、低温度下で
可能とするように作用する。As the bonded body according to claim 2, Sn-Pb, I
n or In alloy is used, and Ga or G is used as a bonding aid.
The structure using a-Bi works so as to enable bonding under low pressure and low temperature.
【００２４】[0024]
【実施例】次に、本発明の端子接合方法の一実施例につ
いて図１及び図２を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the terminal joining method of the present invention will be described with reference to FIGS.
【００２５】各図中、図３及び図４に示す構成部分と対
応する部分には同一符号を付す。In each drawing, the same reference numerals are given to the portions corresponding to the constituent portions shown in FIGS. 3 and 4.
【００２６】まず、図１中、Ｓｎ−Ｐｂ層形成工程１を
行い、図２（Ａ）に示すように、接合体としてのＳｎ−
Ｐｂ層１４，１５を蒸着又はめっきによって形成する。First, in FIG. 1, a Sn-Pb layer forming step 1 is performed, and as shown in FIG.
The Pb layers 14 and 15 are formed by vapor deposition or plating.
【００２７】形成されたＳｎ−Ｐｂ層１４，１５の表面
には、酸化膜１７，１８が形成される。Oxide films 17 and 18 are formed on the surfaces of the formed Sn--Pb layers 14 and 15, respectively.
【００２８】次に、Ｇａ供給工程２０を行う。Next, the Ga supply step 20 is performed.
【００２９】こゝでは、ディスペンサを使用して、図２
（Ｂ）に示すように、基板１２上のＳｎ−Ｐｂ層１５上
に、接合助剤としてのＧａ滴３０を付着させる。In this case, a dispenser is used, as shown in FIG.
As shown in (B), a Ga drop 30 as a bonding aid is attached onto the Sn—Pb layer 15 on the substrate 12.
【００３０】Ｇａは、Ｇａは、融点が２７．９℃であ
り、室温で液相である。またＧａは、酸化膜１７，１８
に対する親和力が高く、酸化膜１７，１８中を拡散し易
い。Ga has a melting point of 27.9 ° C. and is in a liquid phase at room temperature. Ga is the oxide film 17 and 18
Has a high affinity for and easily diffuses in the oxide films 17 and 18.
【００３１】次に、突き合わせ加圧工程２１を行い、図
２（Ｃ）に示すように、Ｓｎ−Ｐｂ層１４，１５を突き
合わせて、一対の端子当り１００ｇの圧力Ｐ2 で加圧す
る。Next, a butt pressurizing step 21 is performed, and as shown in FIG. 2 (C), the Sn-Pb layers 14 and 15 are butt-pressed with each other and a pressure P 2 of 100 g is applied to each pair of terminals.
【００３２】こゝで、圧力Ｐ2 は従来の場合の数分の一
と低く、加圧は、従来に比べてし易い。Here, the pressure P 2 is as low as a fraction of that in the conventional case, and the pressurization is easier than in the conventional case.
【００３３】なお、端子当りの圧力が１００ｇと小さい
のは、Ｇａの酸化膜１７，１８に対するＳｎ−Ｐｂ層１
４，１５の表面の酸化膜１７，１８を取り除く必要が無
いためである。The pressure per terminal is as small as 100 g because the Sn-Pb layer 1 for the Ga oxide films 17 and 18 is small.
This is because it is not necessary to remove the oxide films 17 and 18 on the surfaces of 4 and 15.
【００３４】最後に、加熱工程２２を行う。Finally, heating step 22 is performed.
【００３５】こゝでは、ＬＳＩ１０及び基板１２全体
を、パープルオロカーボン雰囲気中で、約８０℃（Ｇａ
の融点より約５０℃高い温度）で加熱する。Here, the entire LSI 10 and the substrate 12 are heated to about 80 ° C. (Ga
(About 50 ° C. higher than the melting point of).
【００３６】加熱温度８０℃は、従来の場合の約３００
℃に比べて相当に低く、加熱はし易い。The heating temperature of 80 ° C. is about 300 in the conventional case.
It is considerably lower than ℃ and easy to heat.
【００３７】この加熱によって、Ｇａ滴３０のＧａの拡
散力が増し、Ｇａは矢印３１で示すように、酸化膜１
７，１８内に拡散すると共に、Ｓｎ−Ｐｂ層１４，１５
内に均一に拡散する。By this heating, the diffusion force of Ga of the Ga droplet 30 is increased, and the Ga has an oxide film 1 as shown by an arrow 31.
7 and 18, while diffusing into the Sn-Pb layers 14 and 15
Spread evenly inside.
【００３８】Ｇａが酸化膜１７，１８内に拡散すること
により、酸化膜１７，１８は破られる。The diffusion of Ga into the oxide films 17 and 18 breaks the oxide films 17 and 18.
【００３９】また、拡散は、Ｇａ滴３０が全て拡散しき
るまで行われる。The diffusion is performed until the Ga droplets 30 are all diffused.
【００４０】これにより、図２（Ｄ）に示すように、Ｇ
ａ滴３０が全て拡散して無くなり、Ｓｎ−Ｐｂ−Ｇａの
共晶合金製の接合部３２が形成され、この接合部３２に
よって端子１１，１３間が接合された状態となる。As a result, as shown in FIG.
The a droplets 30 are all diffused and disappeared, and a joint portion 32 made of a Sn—Pb—Ga eutectic alloy is formed, and the joint portions 32 join the terminals 11 and 13.
【００４１】こゝで、この接合部３２についてみると、
酸化膜１７，１８は破られており、端子１１，１３間の
電気抵抗は十分に小さい。Looking at this joint 32,
The oxide films 17 and 18 are broken, and the electric resistance between the terminals 11 and 13 is sufficiently small.
【００４２】また、Ｓｎ−Ｐｂ−Ｇａ共晶合金の融点
は、１００℃以上であり、ＬＳＩ１０の動作中の発熱に
よって接合部が外れる虞れは無い。Further, the melting point of the Sn—Pb—Ga eutectic alloy is 100 ° C. or higher, and there is no possibility that the joint will come off due to heat generated during the operation of the LSI 10.
【００４３】次に、本発明の変形例について説明する。Next, a modification of the present invention will be described.
【００４４】接合体として、Ｓｎ−Ｐｂに代えて、Ｉｎ
又はＩｎ合金を使用することもできる。As a joined body, In
Alternatively, an In alloy can be used.
【００４５】また、接合助剤として、Ｇａに代えて、Ｇ
ａ−Ｂｉ合金を使用してもよい。Further, as a bonding aid, instead of Ga, G
An a-Bi alloy may be used.
【００４６】従って、以下に、接合体、接合助剤の組合
せ、及び結果としての接合部の組成を挙げる。Therefore, below, the combination of the bonded body, the bonding aid, and the resulting composition of the bonded portion are listed.
【００４７】[0047]
【数１】 [Equation 1]
【００４８】[0048]
【発明の効果】以上説明した様に、請求項１の発明によ
れば、酸化膜を取り除くことが不要となるため、加圧の
圧力を小さく出来、しかも酸化膜の残留が問題となら
ず、端子間の電気的接続の信頼性を向上し得る。As described above, according to the first aspect of the present invention, since it is not necessary to remove the oxide film, the pressure applied can be reduced, and the residual oxide film does not pose a problem. The reliability of the electrical connection between the terminals can be improved.
【００４９】また、上記のように加圧の圧力が小さくて
足り、且つ加熱の温度も低温で足りるため、接合作業を
従来に比べて、応力的及び加熱的に無理のない状態で行
うことが出来る。Further, since the pressurizing pressure is small and the heating temperature is low as described above, the joining work can be performed in a more stressful and heating-friendly state than in the conventional case. I can.
【００５０】請求項２の発明によれば、応力的及び熱的
に無理のない状況下で、信頼性良く接続し得る。According to the second aspect of the present invention, it is possible to make a reliable connection under a condition where stress and heat are not unreasonable.
【図１】本発明の端子接合方法の一実施例の工程図であ
る。FIG. 1 is a process drawing of an embodiment of a terminal joining method of the present invention.
【図２】図１中、各工程の状態を示す図である。FIG. 2 is a diagram showing a state of each step in FIG.
【図３】従来の端子接合方法の１例の工程図である。FIG. 3 is a process drawing of an example of a conventional terminal joining method.
【図４】図３中、各工程の状態を示す図である。FIG. 4 is a diagram showing a state of each step in FIG.
１ Ｓｎ−Ｐｂ層形成工程 １０ ＬＳＩ １１ 端子 １２ 基板 １３ 端子 １４，１５ Ｓｎ−Ｐｂ層（接合体） １７，１８ 酸化膜 ２０ Ｇａ供給工程 ２１ 突き合わせ加圧工程 ２２ 加熱工程 ３０ Ｇａ滴（接合助剤） ３１ 拡散を示す矢印 ３２ 接合部（Ｓｎ−Ｐｂ−Ｇａ） 1 Sn-Pb layer forming step 10 LSI 11 terminal 12 substrate 13 terminal 14,15 Sn-Pb layer (bonded body) 17,18 Oxide film 20 Ga supply step 21 Butt pressurizing step 22 Heating step 30 Ga drop (bonding aid) ) 31 Arrow indicating diffusion 32 Junction (Sn-Pb-Ga)
Claims (2)
温で他の金属が拡散し易い金属製の接合体（１４，１
５）を形成する接合体形成工程（１１）と、 該形成された接合体上に、液相温度が室温付近である低
融点金属製の接合助剤（３０）を付着させる接合助剤付
着工程（２０）と、 上記端子同士を突き合わせて加圧し、この状態で加熱
し、液相状態の接合助剤を、上記接合体の表面の酸化膜
（１７，１８）内に及び上記接合体（１４，１５）内に
拡散させる加圧加熱工程（２１，２２）とよりなる構成
としたことを特徴とする端子接合方法。1. A metal joined body (14, 1) on which terminals (11, 13) to be joined easily diffuse other metals at low temperature.
5) forming a joined body, and a joining aid attaching step of attaching a joining aid (30) made of a low melting point metal having a liquidus temperature of around room temperature onto the formed joined body. (20) and the terminals are butted against each other and pressed, and heated in this state, and the bonding aid in the liquid phase is applied into the oxide film (17, 18) on the surface of the bonded body and the bonded body (14). , 15) in which the pressure and heating step (21, 22) of diffusing into the inside is performed.
ｎ合金であり、上記接合助剤は、Ｇａ又はＧａ−Ｂｉで
ある構成としたことを特徴とする請求項１記載の端子接
合方法。2. The bonded body is made of Sn—Pb, In or I.
The terminal joining method according to claim 1, wherein the terminal joining method is an n alloy, and the joining aid is Ga or Ga-Bi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4158235A JPH066020A (en) | 1992-06-17 | 1992-06-17 | Terminal joining method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4158235A JPH066020A (en) | 1992-06-17 | 1992-06-17 | Terminal joining method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH066020A true JPH066020A (en) | 1994-01-14 |
Family
ID=15667232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4158235A Pending JPH066020A (en) | 1992-06-17 | 1992-06-17 | Terminal joining method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH066020A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562147B2 (en) | 1995-03-24 | 2003-05-13 | Denso Corporation | Soldered product |
| US6605357B1 (en) | 1999-07-28 | 2003-08-12 | Denso Corporation | Bonding method and bonding structure of thermoplastic resin material |
| JP2007242900A (en) * | 2006-03-09 | 2007-09-20 | Fujitsu Ltd | Electronic device and manufacturing method thereof |
-
1992
- 1992-06-17 JP JP4158235A patent/JPH066020A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6562147B2 (en) | 1995-03-24 | 2003-05-13 | Denso Corporation | Soldered product |
| US6605357B1 (en) | 1999-07-28 | 2003-08-12 | Denso Corporation | Bonding method and bonding structure of thermoplastic resin material |
| JP2007242900A (en) * | 2006-03-09 | 2007-09-20 | Fujitsu Ltd | Electronic device and manufacturing method thereof |
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| A02 | Decision of refusal |
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